CN203481216U - Three-phase full-bridge fast-recovery rectifier module - Google Patents
Three-phase full-bridge fast-recovery rectifier module Download PDFInfo
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- CN203481216U CN203481216U CN201320538135.4U CN201320538135U CN203481216U CN 203481216 U CN203481216 U CN 203481216U CN 201320538135 U CN201320538135 U CN 201320538135U CN 203481216 U CN203481216 U CN 203481216U
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- molybdenum sheet
- molybdenum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
- H01L2224/411—Disposition
- H01L2224/4111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/41113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging straps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
Provided is a three-phase full-bridge fast-recovery rectifier module. An isolation substrate is sintered on a bottom plate of a shell body; a first molybdenum sheet, second molybdenum sheets and a third molybdenum sheet are sintered on the substrate; three first chips are welded on the first molybdenum sheet and three second chips are welded on the three second molybdenum sheets; the three first chips and the three second molybdenum sheets are respectively welded to connection bridges to be electrically connected; the three second chips and the third molybdenum sheet are respectively welded to connection bridges to be electrically connected; each side plate of the shell body is provided with a jack internally equipped with a ceramic spacer; a direct-current wiring terminal passes through the ceramic spacers to be respectively connected with leads on the first molybdenum sheet and the third molybdenum sheet; and an alternating-current wiring terminal passes through the ceramic spacers to be connected with leads on the second molybdenum sheets. The three-phase full-bridge fast-recovery rectifier module has the following advantages: the rectifier module has the characteristics of being small in shape, resistant to high voltage, high in frequency, high in current, good in heat dissipation performance and resistant to high thermal shock; the rectifier module is suitable for rectifying three-phase alternating current in high-voltage, high-frequency and harsh environments; an all-metal sealed shell body is adopted; the insulation voltage is greater than 2000V; and a shell cover and the shell body can be resist higher temperature shock.
Description
Technical field
The utility model belongs to DC-AC conversion device technical field, is specifically related to a kind of three phase full bridge fast-recovery commutation module.
Background technology
Now, the rectification module that domestic many manufacturers produce, its inside chip is connected with binding post, adopts many aluminium wire bondings more, its encapsulation plastic packaging shell encapsulatings that adopt more.Due to three phase rectifier module in actual use, very large at the impulse current of booting moment, therefore, the shortcoming that prior art exists is: many aluminium wires are easily shunted inequality and caused aluminium wire fusing, and current overload ability is lower, and reliability is poor; The packaged type of its plastic packaging shell encapsulating, makes resistance to temperature Cycle and sealing property, heat dispersion weight etc. all can not meet the requirement of user and standard.
Utility model content
The technical problems to be solved in the utility model is: overcome the deficiencies in the prior art, provide a kind of superior performance, overall volume is little, lightweight and the three phase full bridge fast-recovery commutation module of easy installation and removal.
The utility model solves the technical scheme that its technical problem adopts: a kind of three phase full bridge fast-recovery commutation module, comprise a housing, and it is characterized in that: on the base plate of described housing, the substrate of sintering one and the isolation of described base plate electricity; On described substrate, bottom sintering the first molybdenum sheet, three same sizes of middle part sintering, the second molybdenum sheet spaced apart, top sintering the 3rd molybdenum sheet; On described the first molybdenum sheet, weld evenly and at intervals three the first chips, on described three the second molybdenum sheets, weld respectively three the second chips;
Described three the first chips are welded to connect bridge with described three the second molybdenum sheets respectively, are electrically connected to; Described three the second chips and described the 3rd molybdenum sheet are welded to connect bridge, are electrically connected to;
On the side plate of described housing, be provided with jack, in described jack, be provided with ceramic partition; One direct current binding post is connected with the lead-in wire being welded on described the first molybdenum sheet through described ceramic partition; Another direct current binding post is connected with the lead-in wire being welded on described the 3rd molybdenum sheet through described ceramic partition; Three AC terminal is through described ceramic partition, respectively be welded in three lead-in wires on described the second molybdenum sheet and be connected.
Preferably, also comprise cap, described cap be located in described housing top, and described substrate, the first molybdenum sheet, the second molybdenum sheet, the 3rd molybdenum sheet, the first chip, the second chip and connecting bridge are covered in described housing.
Preferably, described housing, cap are metal material making.
Preferably, described base plate is tungsten copper base plate.
Preferably, described substrate is beryllium oxide substrate.
Preferably, described connecting bridge is oxygen-free copper conduction band, and described lead-in wire is oxygen-free copper lead-in wire.
Compared with prior art, the beneficial effects of the utility model are: little, the withstand voltage height of overall volume of the present utility model, high, the large electric current of frequency, thermal diffusivity are good, the features such as cold and hot drastic change that ability is higher, be suitable for, under high pressure, high frequency, natural conditions rugged environment, three-phase alternating current is carried out to rectification, adopt all-metal sealing shell, insulation voltage is greater than 2000V, and being connected of cap and housing adopts parallel seam welding technique, temperature shock that can Nai Genggao.
Accompanying drawing explanation
Fig. 1 is the internal structure schematic diagram that the utility model embodiment takes down cap;
Fig. 2 is broken section structural representation after the utility model encapsulation.
In figure, be labeled as:
1, housing; 2, cap; 3, beryllium oxide substrate; 4, the first molybdenum sheet; 5, the second molybdenum sheet; 6, the 3rd molybdenum sheet;
7, the first chip; 8, the second chip; 9, oxygen-free copper conduction band; 10, ceramic partition; 11, direct current binding post;
12, oxygen-free copper lead-in wire; 13, AC terminal.
Embodiment
Below in conjunction with accompanying drawing embodiment, the utility model is described further:
As shown in Figure 1, 2, a kind of three phase full bridge fast-recovery commutation module, comprises that housing 1, cap 2 are Tungsten-copper Composites and make, on the base plate of housing 1, sintering beryllium oxide substrate 3, beryllium oxide substrate 3 and the isolation of base plate electricity; On beryllium oxide substrate 3, bottom sintering the first molybdenum sheet 4, three same sizes of middle part sintering, the second molybdenum sheet 5 spaced apart, top sintering the 3rd molybdenum sheet 6; On the first molybdenum sheet 4, weld evenly and at intervals three the first chips 7, on three the second molybdenum sheets 5, weld respectively three the second chips 8;
Between three the first chips 7 and three the second molybdenum sheets 5, correspondence has been welded oxygen-free copper conduction band 9 one by one respectively, between every pair of first chip 7, the second molybdenum sheet 5, by oxygen-free copper conduction band 9, is electrically connected to; Three the second chips 8 weld 9, three the second chips 8 of oxygen-free copper conduction bands all by oxygen-free copper conduction band 9 with the 3rd molybdenum sheet 6 respectively, are electrically connected to respectively with the 3rd molybdenum sheet 6;
On the side plate of housing 1, be provided with jack, in jack, be provided with ceramic partition 10; One of two direct current binding posts 11 are connected with the oxygen-free copper lead-in wire 12 being welded on the first molybdenum sheet 4 through ceramic partition 10; Another direct current binding post 11 is connected with the oxygen-free copper lead-in wire 12 being welded on the 3rd molybdenum sheet 6 through ceramic partition 10; Three AC terminal son 13 is through ceramic partition 10, respectively be welded in three oxygen-free coppers lead-in wires 12 on the second molybdenum sheet 5 and be connected;
Cap 2 be located in housing 1 top, and beryllium oxide substrate 3, the first molybdenum sheet 4, the second molybdenum sheet 5, the 3rd molybdenum sheet 6, the first chip 7, the second chip 8 and oxygen-free copper conduction band 9, oxygen-free copper lead-in wire 12 are all covered in housing.Two direct current binding posts 11, three AC terminal 13 are all arranged on outside the side plate of housing 1.
Above, be only preferred embodiment of the present utility model, be not the utility model to be done to the restriction of other form, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every technical solutions of the utility model content that do not depart from, any simple modification, equivalent variations and the remodeling above embodiment done according to technical spirit of the present utility model, still belong to the protection range of technical solutions of the utility model.
Claims (6)
1. a three phase full bridge fast-recovery commutation module, comprises a housing, it is characterized in that: on the base plate of described housing, and sintering one and the electric substrate of isolating of described base plate; On described substrate, bottom sintering the first molybdenum sheet, three same sizes of middle part sintering, the second molybdenum sheet spaced apart, top sintering the 3rd molybdenum sheet; On described the first molybdenum sheet, weld evenly and at intervals three the first chips, on described three the second molybdenum sheets, weld respectively three the second chips;
Described three the first chips are welded to connect bridge with described three the second molybdenum sheets respectively, are electrically connected to; Described three the second chips and described the 3rd molybdenum sheet are welded to connect bridge, are electrically connected to;
On the side plate of described housing, be provided with jack, in described jack, be provided with ceramic partition; One direct current binding post is connected with the lead-in wire being welded on described the first molybdenum sheet through described ceramic partition; Another direct current binding post is connected with the lead-in wire being welded on described the 3rd molybdenum sheet through described ceramic partition; Three AC terminal is through described ceramic partition, respectively be welded in three lead-in wires on described the second molybdenum sheet and be connected.
2. three phase full bridge fast-recovery commutation module according to claim 1, it is characterized in that: also comprise cap, described cap be located in described housing top, and described substrate, the first molybdenum sheet, the second molybdenum sheet, the 3rd molybdenum sheet, the first chip, the second chip and connecting bridge are covered in described housing.
3. three phase full bridge fast-recovery commutation module as claimed in claim 2, is characterized in that: described housing, cap are metal material and make.
4. the three phase full bridge fast-recovery commutation module as described in as arbitrary in claims 1 to 3, is characterized in that: described base plate is tungsten copper base plate.
5. three phase full bridge fast-recovery commutation module according to claim 4, is characterized in that: described substrate is beryllium oxide substrate.
6. three phase full bridge fast-recovery commutation module according to claim 5, is characterized in that: described connecting bridge is oxygen-free copper conduction band, and described lead-in wire is oxygen-free copper lead-in wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320538135.4U CN203481216U (en) | 2013-09-02 | 2013-09-02 | Three-phase full-bridge fast-recovery rectifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320538135.4U CN203481216U (en) | 2013-09-02 | 2013-09-02 | Three-phase full-bridge fast-recovery rectifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203481216U true CN203481216U (en) | 2014-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320538135.4U Expired - Fee Related CN203481216U (en) | 2013-09-02 | 2013-09-02 | Three-phase full-bridge fast-recovery rectifier module |
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| Country | Link |
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| CN (1) | CN203481216U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112696795A (en) * | 2020-12-28 | 2021-04-23 | 青岛海信日立空调系统有限公司 | Air conditioner and control method |
| CN115781115A (en) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | Parallel seam welding method for fan-shaped shell |
-
2013
- 2013-09-02 CN CN201320538135.4U patent/CN203481216U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112696795A (en) * | 2020-12-28 | 2021-04-23 | 青岛海信日立空调系统有限公司 | Air conditioner and control method |
| CN112696795B (en) * | 2020-12-28 | 2024-01-23 | 青岛海信日立空调系统有限公司 | Air conditioner and control method |
| CN115781115A (en) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | Parallel seam welding method for fan-shaped shell |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140312 Termination date: 20160902 |