CN203722569U - Photovoltaic wiring box used for connection of crystalline silica photovoltaic power generation assembly - Google Patents
Photovoltaic wiring box used for connection of crystalline silica photovoltaic power generation assembly Download PDFInfo
- Publication number
- CN203722569U CN203722569U CN201320805557.3U CN201320805557U CN203722569U CN 203722569 U CN203722569 U CN 203722569U CN 201320805557 U CN201320805557 U CN 201320805557U CN 203722569 U CN203722569 U CN 203722569U
- Authority
- CN
- China
- Prior art keywords
- photovoltaic
- base plate
- circuit base
- wiring box
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910002026 crystalline silica Inorganic materials 0.000 title abstract 2
- 238000010248 power generation Methods 0.000 title abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a photovoltaic wiring box used for connection of a crystalline silica photovoltaic power generation assembly. The photovoltaic wiring box comprises a pedestal and an upper cover. A circuit base plate is fixed inside the pedestal. At least two diodes are arranged on the circuit base plate. After all the diodes are connected in series, the diodes are connected with two connectors through two water drop terminals. The other end of each connector extends out from the pedestal. The circuit base plate is a DCB plate. The photovoltaic wiring box is advantaged by simple structure, long service life and high safety.
Description
Technical field
The present invention relates to photovoltaic accessory technical field, especially relate to a kind of for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component.
Background technology
At present, be that three diodes are connected for connecting the photovoltaic junction box internal structure of crystalline silicon photovoltaic electrification component, and the mounting means of diode is for welding or being connected on 4 metal copper sheets, then copper sheet is fixed on base.Its defect is: 1, complex structure, when preparation, acceptance rate is lower.2, the stress between diode is comparatively concentrated, has shortened the useful life of product.3, diode radiating is even not, and Product Safety is lower.
Summary of the invention
The object of this invention is to provide a kind ofly for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, it has long, the higher feature of fail safe in simple in structure, useful life.
The technical scheme that invention adopts is: for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, comprise base and upper cover, this base inside is fixed with circuit base plate, this circuit base plate is provided with at least 2 diodes, and after being cascaded, all diodes are connected to 2 connectors by 2 water droplet connecting terminals, the other end of this connector stretches out this base exterior, and described circuit base plate is DCB plate.
Between described circuit base plate and upper cover, be provided with the briquetting for compressing this diode.
Described base and upper cover are fastened togather, and the joint portion of the two is provided with sealing ring.
The advantage that compared to the prior art the present invention had is: simple in structure, useful life is long, fail safe is higher.Of the present inventionly improve mainly for circuit base plate for the photovoltaic junction box that connects crystalline silicon photovoltaic electrification component, preferably DCB plate as circuit base plate.Because DCB plate has, thermal conductivity is good, steadiness is good, have the thermal coefficient of expansion approaching with silicon and be easy to the advantages such as processing, thereby greatly reduce the connection difficulty of photovoltaic junction box inner part, make its structure comparatively simple, the output of product improves and fraction defective is reduced.Meanwhile, the heat that diode operation is sent out can evenly be dispersed by DCB plate, has increased the fail safe of product, has improved the useful life of product.
Brief description of the drawings
Below in conjunction with drawings and Examples, the present invention is further described:
Fig. 1 is the perspective exploded view of embodiments of the invention.
In figure: 10, base; 20, upper cover; 30, circuit base plate; 40, diode; 50, water droplet terminal; 60, connector; 70, briquetting; 80, sealing ring.
Embodiment
Embodiment, as shown in Figure 1: for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, comprise the base 10 and the upper cover 20 that are combined.These base 10 inside are fixed with circuit base plate 30, this circuit base plate 30 is provided with at least 2 diodes 40, and after all diodes 40 are cascaded, be connected with 2 connectors 60 by 2 water droplet terminals 50, the other end of this connector 60 stretches out this base 10 outsides.Further say, this circuit base plate 30 is DCB plate.This DCB plate is ceramic copper-clad plate (Direct Bonding Copper, referred to as DBC or DCB), refers to a kind of high heat conduction that Copper Foil and ceramic substrate form by high melt and diffusion process in inert gas, the electric composite material of high insulation resistance.This DCB plate has following superior function: 1, Copper Foil and directly combination of pottery, and thermal conductivity is good, and aluminium oxide-DCB thermal conductivity is 24 ~ 28 W/ (mK), and AlN-DCB is 170 ~ 220 W/ (mK).2, the steadiness of ceramic substrate makes DBC plate under various service conditions, all have very excellent insulation property.3, there is the semiconductor chip that the thermal coefficient of expansion approaching with silicon can make to be welded on above and avoid bearing temperature to change the stress impact of bringing, thereby significantly extend the semiconductor product life-span.4, can as pcb board, be easy to process all kinds of figures and circuit, stronger current lead-through ability makes power electronic product realize like a cork chip on board interconnecting function, and high current-carrying capacity can reach 100 amperes/millimeter.Like this, by the introducing of DCB class, greatly reduced the connection difficulty that this is used for the photovoltaic junction box inner part that connects crystalline silicon photovoltaic electrification component, made its structure comparatively simple, thereby the output of product is improved, fraction defective is reduced.Meanwhile, the heat that diode operation is sent out can uniformly dispersing on DCB plate, make the heating of diode comparatively even, increased the fail safe of product, improved the useful life of product.
Optimize:
Between this circuit base plate 30 and upper cover 20, be provided with the briquetting 70 for compressing this diode 40.Like this, make the combination of this diode 40 and this circuit base plate 30 comparatively tight.
This base 10 and upper cover 20 are fastened togather, and the joint portion of the two is provided with sealing ring 80.Like this, further reduce the preparation difficulty that this is used for the photovoltaic junction box that connects crystalline silicon photovoltaic electrification component, also increased the sealing property that this is used for the photovoltaic junction box that connects crystalline silicon photovoltaic electrification component.
The foregoing is only the preferred embodiments of the present invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (3)
1. for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, comprise base (10) and upper cover (20), this base (10) inside is fixed with circuit base plate (30), this circuit base plate (30) is provided with at least 2 diodes (40), and after being cascaded, all diodes (40) are connected with 2 connectors (60) by 2 water droplet terminals (50), the other end of this connector (60) stretches out this base (10) outside, it is characterized in that: described circuit base plate (30) is DCB plate.
2. according to claim 1 for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, it is characterized in that: between described circuit base plate (30) and upper cover (20), be provided with the briquetting (70) for compressing this diode (40).
3. according to claim 1 for connecting the photovoltaic junction box of crystalline silicon photovoltaic electrification component, it is characterized in that: described base (10) and upper cover (20) are fastened togather, and the joint portion of the two is provided with sealing ring (80).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320805557.3U CN203722569U (en) | 2013-12-10 | 2013-12-10 | Photovoltaic wiring box used for connection of crystalline silica photovoltaic power generation assembly |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320805557.3U CN203722569U (en) | 2013-12-10 | 2013-12-10 | Photovoltaic wiring box used for connection of crystalline silica photovoltaic power generation assembly |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203722569U true CN203722569U (en) | 2014-07-16 |
Family
ID=51161689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320805557.3U Expired - Lifetime CN203722569U (en) | 2013-12-10 | 2013-12-10 | Photovoltaic wiring box used for connection of crystalline silica photovoltaic power generation assembly |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203722569U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016119916A1 (en) * | 2015-01-30 | 2016-08-04 | Herkommer, Alois | Solar collector with a two-stage concentrator system |
CN106208956A (en) * | 2016-08-31 | 2016-12-07 | 苏州谐通光伏科技股份有限公司 | Solar photovoltaic assembly rosette |
-
2013
- 2013-12-10 CN CN201320805557.3U patent/CN203722569U/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016119916A1 (en) * | 2015-01-30 | 2016-08-04 | Herkommer, Alois | Solar collector with a two-stage concentrator system |
CN106208956A (en) * | 2016-08-31 | 2016-12-07 | 苏州谐通光伏科技股份有限公司 | Solar photovoltaic assembly rosette |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20140716 |
|
CX01 | Expiry of patent term |