CN102208403B - Half-bridge power module - Google Patents
Half-bridge power module Download PDFInfo
- Publication number
- CN102208403B CN102208403B CN 201110134937 CN201110134937A CN102208403B CN 102208403 B CN102208403 B CN 102208403B CN 201110134937 CN201110134937 CN 201110134937 CN 201110134937 A CN201110134937 A CN 201110134937A CN 102208403 B CN102208403 B CN 102208403B
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- power terminal
- power
- pin
- insulated substrate
- insulated
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- 239000000758 substrate Substances 0.000 claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910000831 Steel Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Combinations Of Printed Boards (AREA)
Abstract
The invention discloses a half-bridge power module with a high power, which comprises a heat radiating substrate, insulating substrates and a power terminal. At least three insulating substrates are arranged on the heat radiating substrate. The power terminal comprises a first power terminal, a second power terminal and a third power terminal. The first power terminal, the second power terminal and the third power terminal are arranged in parallel to form a half-bridge structure. One ends of the first power terminal, the second power terminal and the third power terminal are all connected with the three insulating substrates. A certain insulating distance is reserved between the second power terminal and the third power terminal. The half-bridge power module has the characteristics of high power, high efficiency, low production cost and high reliability.
Description
Technical field
The present invention relates to a kind of power module assembly, specifically a kind of half-bridge power module.
Background technology
Power model IGBT (insulated gate bipolar transistor) module is widely used in frequency converter, welding machine, UPS, solar energy and wind energy field.In traditional high power module encapsulation, in order to reach high reliability, need the reflow soldering power terminal, signal lead needs coiling, needs to fill with epoxy resin.But this power model exists technique complicated, the shortcoming that production cost is higher.
Summary of the invention
The objective of the invention is to design a kind of powerful half-bridge power module.
The present invention will solve is that the production technology that exists of existing power model is complicated, the problem that production cost is higher.
For realizing purpose of the present invention, the technical solution used in the present invention is:
It comprises heat-radiating substrate, insulated substrate and power terminal, at least comprise three insulated substrates on the heat-radiating substrate, power terminal comprises the first power terminal, the second power terminal and the 3rd power terminal, the first power terminal, the second power terminal and the 3rd power terminal formation half-bridge structure that is arranged in parallel, one end of the first power terminal, the second power terminal and the 3rd power terminal all is connected with described three insulated substrates, is provided with certain insulation spacing between the second power terminal and the 3rd power terminal.
Advantage of the present invention is: the one, and power is high, efficient is high, production cost is low and good reliability.The 2nd, the invention provides a kind of simple and economical very symmetrical half-bridge module of electric current dynamic assignment.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is circuit topological structure figure of the present invention.
Embodiment
The present invention is further illustrated below in conjunction with drawings and the specific embodiments.
As shown in the figure, the present invention includes and comprise at least three insulated substrates and three power terminals on heat-radiating substrate 2, the heat-radiating substrate 2.Described these three insulated substrates comprise insulated substrate 5, insulated substrate 7, insulated substrate 9.Described three power terminals comprise the first power terminal 20, the second power terminal 1 and the 3rd power terminal 18.The first power terminal 20, the second power terminal 1 and the 3rd power terminal 18 are arranged in parallel and consist of half-bridge electricity structure.One end of the first power terminal 20, the second power terminal 1 and the 3rd power terminal 18 all with described insulated substrate 5, insulated substrate 7, insulated substrate 9.Between the second power terminal 1 and the 3rd power terminal 18 the insulation spacing is arranged.Insulated substrate 9 is provided with igbt chip 13 and diode chip for backlight unit 14.
The first power terminal 20 is provided with three pins, and the first power terminal is respectively pin 16, pin 17, pin 19 by these three pins, and pin 19, pin 17, pin 16 are connected with insulated substrate 5, insulated substrate 7, insulated substrate 9 respectively.
The second power terminal 1 is provided with three pins, is respectively pin 10, pin 6, pin 3, and pin 3, pin 6, pin 10 are connected with insulated substrate 5, insulated substrate 7, insulated substrate 9 respectively.The second power terminal is connected with three insulated substrates respectively by these three pins.
The 3rd power terminal 18 is provided with three pins, is respectively pin 11, pin 8, pin 4, and pin 4, pin 8, pin 11 are connected with insulated substrate 5, insulated substrate 7, insulated substrate 9 respectively.
Insulated substrate 5, insulated substrate 7, insulated substrate 9 are distributed on the heat-radiating substrate 2 side by side.
Insulated substrate 5, insulated substrate 7, insulated substrate 9 usefulness ceramic materials are made.
Heat-radiating substrate 2 is to be flat heat-radiating substrate, makes with copper or AiSiC or CuSiC.The thickness of heat-radiating substrate is 3mm-5mm.
The refined lead that is connected to of described insulated substrate 5, insulated substrate 7, insulated substrate 9 and the first power terminal 20, the second power terminal 1 and the 3rd power terminal 18 welds, or supersonic bonding.
Copper is covered in insulated substrate 5, insulated substrate 7, insulated substrate 9 both sides, between the thickness 0.1-0.3mm.
In the second power terminal 1 of the present invention and the 3rd power terminal 18, one of them is electronegative potential, and another is high potential.
Power terminal one end of the present invention connects insulated substrate, and the other end is drawn and connected outside bus.
Now specify assembling mode of the present invention:
At first igbt chip 13 and diode chip for backlight unit 14 are bonded on the insulated substrate 9, bonding mode can be that refluxing soft soldering connects, or Diffusion Welding, or the silver powder crimping.Then coupling together with bonding aluminum steel 15, bonding aluminum steel 12 between igbt chip 13, diode chip for backlight unit 14 and the insulated substrate 9.Again insulated substrate 9, insulated substrate 5, insulated substrate 7 are bonded on the heat-radiating substrate 2, use at last the mode of supersonic bonding respectively the first power terminal 20, the second power terminal 1, the pin 16 of the 3rd power terminal 18, pin 17, pin 19, pin 10, pin 6, pin 3, pin 11, pin 8, pin 4 to be connected respectively on insulated substrate 9, insulated substrate 5, the insulated substrate 7.
Fig. 2 is the circuit topological structure figure of Fig. 1.The 3rd power terminal 18, the first power terminal 20 and the second power terminal 1 among Fig. 2 40,30, the 20 difference corresponding diagram 1.Pin 4 among Fig. 1, pin 8, pin 11; Pin 16, pin 17, pin 19; Pin 3, pin 3, pin 10 are distinguished 41,42,43 of corresponding diagram 2; 31,32,33; 21,22,23.
Claims (6)
1. a half-bridge power module comprises heat-radiating substrate, insulated substrate and power terminal, it is characterized in that comprising at least on heat-radiating substrate three insulated substrates, and power terminal comprises the first power terminal, the second power terminal and the 3rd power terminal; The first power terminal, the second power terminal and the 3rd power terminal formation half-bridge structure that is arranged in parallel; One end of the first power terminal, the second power terminal and the 3rd power terminal all is connected with described three insulated substrates, is provided with spacing between the second power terminal and the 3rd power terminal;
The first power terminal is provided with three pins, and the first power terminal is connected with three insulated substrates respectively by these three pins;
The second power terminal is provided with three pins, and the second power terminal is connected with three insulated substrates respectively by these three pins;
The 3rd power terminal is provided with three pins, and the 3rd power terminal is connected with three insulated substrates respectively by these three pins.
2. a kind of half-bridge power module according to claim 1 is characterized in that three insulated substrates are distributed on the heat-radiating substrate side by side.
3. a kind of half-bridge power module according to claim 1 is characterized in that insulated substrate makes with ceramic material.
4. a kind of half-bridge power module according to claim 1 is characterized in that heat-radiating substrate is to be flat heat-radiating substrate, makes with copper or AiSiC or CuSiC.
5. a kind of half-bridge power module according to claim 1, the thickness that it is characterized in that heat-radiating substrate is 3mm-5mm.
6. a kind of half-bridge power module according to claim 1 is characterized in that the insulated substrate both sides cover copper, covers between the thickness 0.1-0.3mm of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110134937 CN102208403B (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110134937 CN102208403B (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102208403A CN102208403A (en) | 2011-10-05 |
| CN102208403B true CN102208403B (en) | 2013-03-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110134937 Active CN102208403B (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Country Status (1)
| Country | Link |
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| CN (1) | CN102208403B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369666B (en) * | 2017-08-08 | 2019-07-05 | 华北电力大学 | A kind of half-bridge module and packaging method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0533158B1 (en) * | 1991-09-20 | 1998-07-08 | Hitachi, Ltd. | Three-phase three-level inverter device |
| DE19924993C2 (en) * | 1999-05-31 | 2002-10-10 | Tyco Electronics Logistics Ag | Intelligent power module in sandwich construction |
| JP4336205B2 (en) * | 2004-01-05 | 2009-09-30 | 三菱電機株式会社 | Power semiconductor module |
| JP2007235004A (en) * | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | Semiconductor device |
| KR101194041B1 (en) * | 2006-12-07 | 2012-10-24 | 페어차일드코리아반도체 주식회사 | High power semiconductor device |
| CN202120903U (en) * | 2011-05-24 | 2012-01-18 | 嘉兴斯达半导体有限公司 | Half-bridge power module |
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2011
- 2011-05-24 CN CN 201110134937 patent/CN102208403B/en active Active
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| Publication number | Publication date |
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| CN102208403A (en) | 2011-10-05 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Jiaxing City, Zhejiang province 314000 Nanhu District Branch Road No. 988 (Jiaxing city) Applicant after: STARPOWER SEMICONDUCTOR Ltd. Address before: Central South Road Furun Nanhu District of Jiaxing city of Zhejiang Province east three layer 314000 Applicant before: Jiaxing Starpower Semiconductor Co.,Ltd. |
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| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: JIAXING STARPOWER SEMICONDUCTOR LTD. TO: JIAXING STARPOWER SEMICONDUCTOR SHARES LTD. |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Half-bridge power module Effective date of registration: 20151209 Granted publication date: 20130320 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20161212 Granted publication date: 20130320 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Half-bridge power module Effective date of registration: 20161216 Granted publication date: 20130320 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180904 Granted publication date: 20130320 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 314000, No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee after: Star Semiconductor Co.,Ltd. Address before: 314000, No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
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| CP01 | Change in the name or title of a patent holder |