CN201927602U - Power module comprising special power terminal - Google Patents
Power module comprising special power terminal Download PDFInfo
- Publication number
- CN201927602U CN201927602U CN2010206004126U CN201020600412U CN201927602U CN 201927602 U CN201927602 U CN 201927602U CN 2010206004126 U CN2010206004126 U CN 2010206004126U CN 201020600412 U CN201020600412 U CN 201020600412U CN 201927602 U CN201927602 U CN 201927602U
- Authority
- CN
- China
- Prior art keywords
- power terminal
- power
- insulated substrate
- model
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
The utility model discloses a power module comprising a special power terminal, which comprises a chip, an insulating base plate, a heating panel, a power terminal and a shell, wherein the power terminal is welded on the insulating base plate by means of soldering or ultrasonic pressure soldering. As the power module comprises the power terminal with a special structure, the righty and the resistance of the power terminal can be well balanced, and the reliability of a soldering point can be increased.
Description
Technical field
The utility model belongs to the power electronics field, relates to the encapsulation of power model, specifically a kind of power model that comprises special power terminal.
Background technology
The power terminal of power model, normally use the encapsulation of conventional package method, and this power model, after working long hours, the problem that power terminal comes off easily and occurs losing efficacy, main cause is when power terminal bears big external stress or thermal stress, under temperature and thermal stress effect, lost efficacy in the power terminal back that occurs coming off, the reason that comes off is to lack a kind of structure that discharges stress, offsets the influence to the terminal bottom of stress that the power terminal strain brings.
Summary of the invention
The purpose of this utility model is to design a kind of power model that comprises special power terminal.
To be solved in the utility model is that the power terminal of existing power model works long hours to come off easily and causes the problem that lost efficacy.
The technical solution of the utility model is: comprise chip, insulated substrate, heating panel, power terminal and shell, the chip reflow soldering is on insulated substrate, insulated substrate directly is welded on the heating panel by soldering again, the power terminal reflow soldering is on insulated substrate, realize being electrically connected by the aluminum steel bonding between chip and the insulated substrate, shell is installed on the heating panel, it is characterized in that power terminal is bent into the bending structure, this bending bending comprises the U type, S type and L type are selected wherein a kind of at least for use.
The utility model has the advantages that: because the utility model power terminal S-type or U type structure or L type structure, this structure has not only increased the rigidity of power terminal, simultaneously fine balance the resistance of power terminal, increased the reliability of pad, make the power terminal difficult drop-off, thereby the bulk life time of power model has increased greatly.
Description of drawings
Fig. 1 is a U type power terminal structure.
Fig. 2 is a S type power terminal structure.
Fig. 3 is a L type power terminal structure.
Fig. 4 is the side structure of S type power terminal power model.
Fig. 5 is the stereogram of S type power terminal power model.
Fig. 6 is the stereogram of L type power terminal power model.
Fig. 7 is the stereogram of U type power terminal power model.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
As shown in the figure, power model of the present utility model is insulated gate bipolar transistor (IGBT) module, it comprises insulated gate bipolar transistor chip 9, insulated substrate 10, heating panel 8, power terminal 4, power terminal 5, power terminal 6, bonding aluminum steel 7, plastic casing 11.9 reflow solderings of insulated gate bipolar transistor chip are on the conductive copper layer of insulated substrate (DBC) 10, and insulated substrate (DBC) 10 directly is welded on the heating panel 8 by soldering again.Power terminal 4, power terminal 5, power terminal 6 by reflow soldering on insulated substrate (DBC) 10.Realize being electrically connected by aluminum steel 7 bondings between insulated gate bipolar transistor chip 9 and insulated substrate (DBC) the 10 corresponding conductive layers.Plastic casing 11 is installed on the heating panel 8.
The structure of above-mentioned power terminal 4 is U type structure 1 or S type structure 2, the structure of power terminal 5 be U type structure 1 or S type structure 2, power terminal 6 structure be U type structure 1 or S type structure 2, see illustrated in figures 1 and 2.
The chip of power model of the present utility model also comprises rectifier, igbt chip 9, mos field effect transistor, double-click transistor, junction field effect transistor, Schottky diode and thyristor.
At least two of the numbers of the utility model inside modules power terminal, maximum six.The thickness of power terminal is 1mm-2mm.
The structure of power terminal 4, power terminal 5, power terminal 6 can also be other shape 3, as the L type of Fig. 3.
Chip comprises rectifier, igbt chip, mos field effect transistor, double-click transistor, junction field effect transistor, Schottky diode and thyristor, selects wherein a kind of at least for use.
Be welded to connect by ultrasonic wave crimping connection or by refined lead between above-mentioned power terminal 4, power terminal 5, power terminal 6 and the insulated substrate (DBC) 10.
Insulated substrate (DBC) 10 comprises aluminium nitride insulated substrate, alumina insulation substrate and insulating silicon nitride substrate, selects wherein a kind of at least for use.On plastic casing 11 shells fairlead is arranged, above-mentioned power terminal 4, power terminal 5, power terminal 6 are connected by bolt by the bus of corresponding fairlead and outside.
Claims (7)
1. power model that comprises special power terminal, comprise chip, insulated substrate, heating panel, power terminal and shell, the chip reflow soldering is on insulated substrate, insulated substrate directly is welded on the heating panel by soldering again, the power terminal reflow soldering is on insulated substrate, realize being electrically connected by the aluminum steel bonding between chip and the insulated substrate, shell is installed on the heating panel, it is characterized in that power terminal is bent into the bending structure, this bending structure comprises the U type, S type and L type are selected wherein a kind of at least for use.
2. a kind of power model that comprises special power terminal according to claim 1, it is characterized in that chip comprises rectifier, igbt chip, mos field effect transistor, double-click transistor, junction field effect transistor, Schottky diode and thyristor, select wherein a kind of at least for use.
3. a kind of power model that comprises special power terminal according to claim 1 is characterized in that connecting by the ultrasonic wave crimping between power terminal and the insulated substrate or being welded to connect by refined lead.
4. a kind of power model that comprises special power terminal according to claim 1 is characterized in that insulated substrate comprises aluminium nitride insulated substrate, alumina insulation substrate and insulating silicon nitride substrate, selects wherein a kind of at least for use.
5. a kind of power model that comprises special power terminal according to claim 1, its feature has a fairlead on shell, and power terminal is connected by bolt by the bus of this fairlead and outside.
6. a kind of power model that comprises special power terminal according to claim 1 is characterized in that having at least on the power model two power terminals.
7. a kind of power model that comprises special power terminal according to claim 1, the thickness that it is characterized in that power terminal is 1mm-2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206004126U CN201927602U (en) | 2010-11-11 | 2010-11-11 | Power module comprising special power terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206004126U CN201927602U (en) | 2010-11-11 | 2010-11-11 | Power module comprising special power terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201927602U true CN201927602U (en) | 2011-08-10 |
Family
ID=44431439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206004126U Expired - Lifetime CN201927602U (en) | 2010-11-11 | 2010-11-11 | Power module comprising special power terminal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201927602U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064160A (en) * | 2010-11-11 | 2011-05-18 | 嘉兴斯达微电子有限公司 | Power module containing special power terminal |
| CN102800833A (en) * | 2012-08-31 | 2012-11-28 | 江苏宏微科技股份有限公司 | Electrode terminal of power module and welding method thereof |
| CN102931175A (en) * | 2012-11-14 | 2013-02-13 | 江苏爱普特半导体有限公司 | Thyristor module |
| CN103579374A (en) * | 2012-08-08 | 2014-02-12 | 罗伯特·博世有限公司 | High intensity temperature change-resistant crimping diode |
| CN112750803A (en) * | 2019-10-31 | 2021-05-04 | 株洲中车时代电气股份有限公司 | Busbar terminal and IGBT power module |
-
2010
- 2010-11-11 CN CN2010206004126U patent/CN201927602U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064160A (en) * | 2010-11-11 | 2011-05-18 | 嘉兴斯达微电子有限公司 | Power module containing special power terminal |
| CN103579374A (en) * | 2012-08-08 | 2014-02-12 | 罗伯特·博世有限公司 | High intensity temperature change-resistant crimping diode |
| CN102800833A (en) * | 2012-08-31 | 2012-11-28 | 江苏宏微科技股份有限公司 | Electrode terminal of power module and welding method thereof |
| CN102800833B (en) * | 2012-08-31 | 2015-03-18 | 江苏宏微科技股份有限公司 | Electrode terminal of power module and welding method thereof |
| CN102931175A (en) * | 2012-11-14 | 2013-02-13 | 江苏爱普特半导体有限公司 | Thyristor module |
| CN102931175B (en) * | 2012-11-14 | 2015-04-08 | 江苏爱普特半导体有限公司 | Thyristor module |
| CN112750803A (en) * | 2019-10-31 | 2021-05-04 | 株洲中车时代电气股份有限公司 | Busbar terminal and IGBT power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160718 Address after: 201800 Shanghai City, Jiading District Hui Yan Road No. 1899 Building 5 floor 1 B zone Patentee after: SHANGHAI DAOZHI TECHNOLOGY CO., LTD. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110810 |