CN109801899A - A kind of power semiconductor modular - Google Patents
A kind of power semiconductor modular Download PDFInfo
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- CN109801899A CN109801899A CN201811607844.7A CN201811607844A CN109801899A CN 109801899 A CN109801899 A CN 109801899A CN 201811607844 A CN201811607844 A CN 201811607844A CN 109801899 A CN109801899 A CN 109801899A
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Abstract
The present invention discloses a kind of power semiconductor modular, it include: multiple power semiconductor units being set side by side, each power semiconductor units are encapsulated in shell, and resilient support is carried out by the elastic force unit in shell, each power semiconductor units are arranged independently of each other, and be mounted between the first metal electrode and the second metal electrode, the first metal electrode is electrically connected with each power semiconductor units, and the first metal electrode is electrically connected with external circuit respectively with the second metal electrode.The power semiconductor units in power semiconductor modular in the present invention are arranged independently of each other, when a certain power semiconductor units once break down, it can use in addition normal power semiconductor units replacement, therefore, chip submodule can be made full use of, and then improve the utilization rate of chip submodule, it is possible to reduce the replacement cost of chip submodule.
Description
Technical field
The present invention relates to power semiconductor device technology fields, and in particular to a kind of power semiconductor modular.
Background technique
Power semiconductor modular is the core devices in power electronic devices, and power semiconductor modular is mainly double by insulated gate
Gated transistors (Insulated Gate Bipolar Transistor, IGBT) device composition, IGBT device combine MOSFET
The advantages such as device voltage driving and the bipolar output of BJT device, have control simple, high-voltage great-current, high-frequency low-consumption etc. excellent
Point.Therefore, the power semiconductor being made of IGBT device is widely used for the great Rong such as rail traffic, flexible DC transmission
Application field is measured, there are good market prospects.
Currently, since power semiconductor modular is often made of multiple chip submodule groups arranged side by side, so traditional power
Semiconductor module carries out this multiple chip submodule group arranged side by side for the ease of managing multiple chip submodule groups arranged side by side concentratedly
Grouping, every group of chip submodule group is separately mounted on same substrate, and the conductive electrode of same group of chip submodule group is led to
It crosses public contact point to be electrically connected, it is clear that when same group of chip submodule group once breaks down, other chips of the group are sub
Mould group can not also work on, it is clear that this utilization rate that will lead to each chip submodule group substantially reduces, and in turn results in power half
The design cost of conductor module further increases.
Summary of the invention
Therefore, technical problems to be solved of the embodiment of the present invention are the utilization rate of power semiconductor modular in the prior art
It is lower, and design cost is higher.
For this purpose, the embodiment of the invention provides following technical solutions:
The embodiment of the present invention provides a kind of power semiconductor modular, comprising: multiple power semiconductor units being set side by side,
Each power semiconductor units are encapsulated in shell, and carry out resilient support by the elastic force unit in the shell,
It is characterized in that, each power semiconductor units are arranged independently of each other, and are mounted on the first metal electrode and the second metal electricity
Between pole, first metal electrode is electrically connected with each power semiconductor units, first metal electrode with it is described
Second metal electrode is electrically connected with external circuit respectively.
Optionally, each power semiconductor units include the first chip submodule and the second chip submodule, described
First chip submodule is disposed adjacent with the second chip submodule.
Optionally, the first chip submodule includes first electrode block, the first chip, second electrode block and third electrode
Block；
The first electrode block is located at the side of first chip, recessed by the first of first metal electrode setting
Slot is electrically connected with first metal electrode；
The second electrode block is located at the center of first chip；The third electrode block is located at first chip
The other side, in the center setting first through hole of the third electrode block；
The first electrode block, the third electrode block are equal in magnitude with first groove.
Optionally, the second chip submodule includes the 4th electrode block, the second chip, the 5th electrode block；
4th electrode block is located at the side of second chip, in the second groove being arranged by the first metal electrode
It is electrically connected with first metal electrode；
5th electrode block is located at the other side of second chip；
4th electrode block, the 5th electrode block are equal in magnitude with second groove.
Optionally, be additionally provided between first metal electrode and second metal electrode the first fixed frame and
Second fixed frame；
First fixed frame is arranged by first metal electrode, and is bonded in the first chip submodule
Two sides, first fixed frame and the first chip submodule constitute the first semi-surrounding structure；
Second fixed frame is arranged by first metal electrode, and is bonded in the second chip submodule
Two sides, second fixed frame and the second chip submodule constitute the second semi-surrounding structure.
Optionally, the opening of first semi-surrounding structure and second semi-surrounding structure is electric towards second metal
Pole；
In the space of first semi-surrounding structure be filled with the first insulating materials, first insulating materials with it is described
The contact of first chip submodule, and the first chip submodule is not covered；
In the space of second semi-surrounding structure be filled with the second insulating materials, second insulating materials with it is described
The contact of second chip submodule, and the second chip submodule is not covered.
Optionally, the elastic force unit includes the first spring assembly and second spring component；
First spring assembly includes the first metal block, the second metal block, the first conductive metal sheet and the first spring
Part, first metal block are equal in magnitude with the third electrode block；
First conductive metal sheet and first spring means are located at first metal block and second metal
Between block, and by the first fixed frame semi-surrounding, the distance between first metal block and second metal block root
It is determined according to the collapsing length of first spring means；
The second spring component includes third metal block, the 4th metal block, the second conductive metal sheet and second spring device
Part, second conductive metal sheet and the second spring device be located at the third metal block and the 4th metal block it
Between, and by the second fixed frame semi-surrounding, the distance between the third metal block and the 4th metal block are according to institute
The collapsing length for stating second spring device determines.
Optionally, first conductive metal sheet surrounds first spring means, first conductive metal sheet it is outer
Wall is contacted with first metal block, second metal block and first fixed frame part, so that described first leads
Electric metal piece is clamped by first metal block, second metal block and first fixed frame；
Second conductive metal sheet surrounds the second spring device, the outer wall of second conductive metal sheet with it is described
Third metal block, the 4th metal block and the contact of second fixed frame part, so that second conductive metal sheet
Clamped by the third metal block, the 4th metal block and second fixed frame.
Optionally, in the second through-hole of center setting of first metal block, in the center setting of second metal block
Third through-hole installs the first insulating sleeve by second through-hole and the third through-hole, and first insulating sleeve is located at
Between first metal block and second metal block, and pass through first conductive metal sheet and first spring
Part, the first end of first insulating sleeve also extend through second through-hole and contact with the first through hole, first insulation
The second end of casing passes through the third groove being arranged in the third through-hole and second metal electrode and contacts.
Optionally, in the center setting fourth hole of the third metal block, in the center setting of the 4th metal block
Five through-holes install the second insulating sleeve by the fourth hole and the fifth hole, and second insulating sleeve is located at institute
It states between third metal block and the 4th metal block, and passes through second conductive metal sheet and the second spring device,
The first end of second insulating sleeve is contacted with the fourth hole, and the second end of second insulating sleeve is passed through described
Fifth hole is contacted with second metal electrode.
Optionally, it is provided with power spring in first insulating sleeve, one end of the power spring and described the
The second electrode block of one chip submodule is electrically connected, and the other end of the power spring is connect with PCB driving plate.
Optionally, the PCB driving plate is mounted in the third groove, and the third groove grafting passes through the third
First insulating sleeve of through-hole.
Technical solution of the embodiment of the present invention, has the advantages that
The present invention provides a kind of power semiconductor modular, comprising: multiple power semiconductor units being set side by side, Mei Gegong
Rate semiconductor unit is encapsulated in shell, and carries out resilient support, each power semiconductor list by the elastic force unit in shell
First mutually indepedent setting, and be mounted between the first metal electrode and the second metal electrode, the first metal electrode and each power
Semiconductor unit electrical connection, the first metal electrode are electrically connected with external circuit respectively with the second metal electrode.Function in the present invention
Power semiconductor units in rate semiconductor module are arranged independently of each other, between each other without electric connecting relation, when a certain power
Semiconductor unit once breaks down, and can use in addition normal power semiconductor units replacement, therefore, can make full use of
Chip submodule, and then improve the utilization rate of chip submodule, it is possible to reduce the replacement cost of chip submodule.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structure chart of power semiconductor modular in the embodiment of the present invention 1；
Fig. 2 is the first schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 3 A is the second schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 3 B is the third schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 4 A is the third schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 4 B is the 4th schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 5 A is the 5th schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 5 B is the 6th schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 6 A is the 7th schematic diagram of power semiconductor modular in the embodiment of the present invention 1；
Fig. 6 B is the 8th schematic diagram of power semiconductor modular in the embodiment of the present invention 1.
Appended drawing reference:
1- power semiconductor units；2- shell；The first metal electrode of 3-；
The second metal electrode of 4-；5- elastic force unit；6-PCB driving plate；
11- the first chip submodule；12- the first chip submodule；The first fixed frame of 13-；
The second fixed frame of 14-；The first insulating sleeve of 15-；The second insulating sleeve of 16-；
The first insulating materials of 17-；The second insulating materials of 18-；111- first electrode block；
112- second electrode block；113- third electrode block；The first chip of 114-；
The 4th electrode block of 121-；The 5th electrode block of 122-；The second chip of 123-；
The first groove of 31-；The second groove of 32-；41- third groove；
The first spring assembly of 51-；52- second spring component；The first metal block of 511-；
The second metal block of 512-；The first conductive metal sheet of 513-；The first spring means of 514-；
521- third metal block；The 4th metal block of 522-；The second conductive metal sheet of 523-；
524- second spring device；151- power spring；1131- first through hole；
The second through-hole of 5111-；5121- third through-hole；5211- fourth hole；
5221- fifth hole.
Specific embodiment
It is clearly and completely described below in conjunction with technical solution of the attached drawing to the embodiment of the present invention, it is clear that described
Embodiment be a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff every other embodiment obtained without making creative work belongs to what the present invention protected
Range.
In the description of the embodiment of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right",
The orientation or positional relationship of the instructions such as "vertical", "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings,
It is merely for convenience of the description embodiment of the present invention and simplifies description, rather than the device or element of indication or suggestion meaning must have
There is specific orientation, be constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " the
One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can also be the connection inside two elements, can be wireless connection, be also possible to wired connection.For the common skill of this field
For art personnel, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
Embodiment 1
The embodiment of the present invention provides a kind of power semiconductor modular, as shown in Figure 1, comprising: multiple power being set side by side
Semiconductor unit 1, each power semiconductor units 1 are encapsulated in shell 2, and the material of shell 2 herein is ceramic material.Such as
Shown in Fig. 2, each power semiconductor units 1 herein mainly include the first chip submodule 11 and the second chip submodule 12,
Wherein the first chip submodule 11 is igbt chip submodule, mainly by power field effect transistor and insulated gate bipolar transistor
Pipe composition, and the second chip submodule 12 is Diode chip submodule, therefore, power semiconductor units 1 are power semiconductor moulds
The important component of block, and power semiconductor modular is the core devices of power electronic devices, it is multiple to set side by side in Fig. 1
The power semiconductor units 1 set are mutually indepedent, when some power semiconductor units 1 once breaks down, can choose another function
Rate semiconductor unit 1 is replaced, and then can make full use of power semiconductor units 1, improves the utilization of power semiconductor units 1
Rate avoids the whole replacement cost replaced power semiconductor modular, lead to increase chip submodule.
Specifically, each power semiconductor units 1 in Fig. 1 carry out elastic force branch by the elastic force unit 5 in shell 2
Support, the mechanical performance of device can be enhanced in elastic force unit 5, so that the mechanical pressure between device is evenly distributed.In each of Fig. 1
Power semiconductor units 1 are arranged independently of each other, and are mounted between the first metal electrode 3 and the second metal electrode 4, the first metal
Electrode 3 is electrically connected with each power semiconductor units 1, and the first metal electrode 3 and the second metal electrode 4 are electric with external circuit respectively
Connection.First metal electrode 3 and the second metal electrode 4 are for exporting the electric signal that power semiconductor units 1 export to outside
Circuit establishes electrical connection with external circuit, and each power semiconductor units 1 are mounted on the first metal electrode 3 and second
Metal electrode 4, therefore, between multiple power semiconductor units 1 can by the first metal electrode 3 or the second metal electrode 4 into
Row electrical connection, rather than each power semiconductor units 1 are directly electrically connected by its conductive electrode.
Power semiconductor modular in the embodiment of the present invention, in Fig. 1, each power semiconductor units 1 include the first core
Piece submodule 11 and the second chip submodule 12, the first chip submodule 11 are disposed adjacent with the second chip submodule 12.As
Other interchangeable embodiments, the first chip submodule 11 and the second chip submodule can also be staggered.The present embodiment
In the first chip submodule 11 and the second chip submodule 12 can need be configured according to the layout of submodule.First chip
Submodule 11 is igbt chip submodule, and the second chip submodule 12 is Diode chip submodule.The two different chips
Sub-modular structure is different, it is thereby achieved that different electric functions, igbt chip submodule be mainly used to it is electrically driven,
Diode chip submodule mainly realizes reversed afterflow.
Power semiconductor modular in the embodiment of the present invention, as shown in Fig. 2 or Fig. 3 A, the first chip submodule 11 includes the
One electrode block 111, the first chip 114, second electrode block 112 and third electrode block 113, first electrode block 111 are located at the first core
The side of piece 114, third electrode block 113 are located at the other side of the first chip 114, in the center setting the of third electrode block 113
One through-hole 1131, can be seen that in Fig. 2, and first electrode block 111, third electrode block 113 are equal in magnitude with the first groove 31.
Wherein, first electrode block 111 is the collector of the first chip submodule 11, and second electrode block 112 is the first chip submodule 11
Grid, third electrode block 113 be the first chip submodule 11 emitter.
In Fig. 2, first electrode block 111 passes through the first groove 31 and the first metal electrode that the first metal electrode 3 is arranged
3 electrical connections, second electrode block 112 are located at the center of the first chip 114.
In figure 3 a, by welding or sintering technology, by first electrode block 111, second electrode block 112 and third electricity
Pole block 113 is bonded together, and can be realized good electrical connection and heat dissipation, and second electrode block 112 is located at the first chip 114
Middle position opens up first through hole 1131 in the centre of third electrode block 113, which is convenient for and other conductive elements
Part is electrically connected, and first electrode block 111 and third electrode block 113 are distributed the two sides that the first chip is arranged in, and herein first
Chip 114 is igbt chip, and first electrode block 111 is equal in magnitude with third electrode block 113, is carried out with the first chip 114
Bonding is integrally formed structure.
Power semiconductor modular in the embodiment of the present invention, as shown in Figure 3B, the second chip submodule 12 include the 4th electricity
Pole block 121, the second chip 123, the 5th electrode block 122, the 4th electrode block 121 are located at the side of the second chip 123.5th electrode
Block 122 is located at the other side of the second chip 123, can be seen that in Fig. 2, the 4th electrode block 121, the 5th electrode block 122 and
Two grooves 32 it is equal in magnitude.Wherein, the 4th electrode block 121 is the cathode of the second chip submodule 12, and the 5th electrode block 122 is
The anode of second chip submodule 12.In Fig. 2, the 4th electrode block 121 is by being arranged in 3 second groove of the first metal electrode
It is electrically connected in 32 with the first metal electrode 3.
Power semiconductor modular in the embodiment of the present invention, as shown in Fig. 2, in the first metal electrode 3 and the second metal electricity
It is additionally provided with the first fixed frame 13 and the second fixed frame 14 between pole 4, plays the role of immobilising device.Herein first
The material of fixed frame 13 and the second fixed frame 14 is plastics, is the first fixed frame 13 as more preferred embodiment
With the second fixed frame 14 using high temperature resistants, the insulating materials without ion releasing object such as polyethers ether coppers.
In Fig. 2, the first fixed frame 13 is arranged by the first metal electrode 3, and is bonded in the first chip submodule 11
Two sides, the first fixed frame 13 and the first chip submodule 11 constitute the first semi-surrounding structure.
Specifically, as shown in Figure 4 A, by the way of mold or bonding, by the first fixed frame 13 and the first chip
11 tight bond of module.The first semi-surrounding structure that first fixed frame 13 and the first chip submodule 11 are constituted, this first half
Surrounding structure can be used as container, convenient for the Insulation stopping of perfusion liquid filling.
In Fig. 2, the second fixed frame 14 is also disposed at by the first metal electrode 3, and is bonded in the second chip submodule
12 two sides, the second fixed frame 14 and the second chip submodule 12 constitute the second semi-surrounding structure.
Specifically, as shown in Figure 4 B, by the way of mold or bonding, by the second fixed frame 14 and the second chip
12 tight bond of module.The second semi-surrounding structure that second fixed frame 14 and the second chip submodule 12 are constituted, this second half
Surrounding structure can be used as container, convenient for the insulating materials of perfusion liquid filling.
Power semiconductor modular in the embodiment of the present invention, as shown in Fig. 2, the first semi-surrounding structure and the second semi-surrounding knot
Opening the second metal electrode 4 of direction of structure.
As shown in Figure 5A, the power semiconductor modular in the embodiment of the present invention, first formed in the first fixed frame 13
The first insulating materials 17 is filled in the space of semi-surrounding structure, the first insulating materials 17 is contacted with the first chip submodule 11,
And the first chip submodule 11 is not covered.After the first fixed frame is mounted to, by the way of high-temperature vacuum injection, perfusion is exhausted
Edge material, is then solidified, the height of the insulating materials of the filling height whole not higher than the first chip submodule 11.The
One insulating materials 17 is mainly used to carry out electric insulation, because filling the first insulating materials in the inside of the first fixed frame 13
17 can be enhanced the insulation performance of the first chip submodule 11.
As shown in Figure 5 B, the power semiconductor modular in the embodiment of the present invention, second formed in the second fixed frame 14
The second insulating materials 18 is filled in the space of semi-surrounding structure, the second insulating materials 18 is contacted with the second chip submodule 12,
And the second chip submodule 12 is not covered.After the second regulation frame is mounted to, by the way of high-temperature vacuum injection, perfusion is exhausted
Edge material, is then solidified, the height of the insulating materials of the filling height whole not higher than the first chip submodule 11.The
One insulating materials 17 is mainly used to carry out electric insulation, because filling the first insulating materials in the inside of the first fixed frame 13
17 can be enhanced the insulation performance of the second chip submodule 12.
Power semiconductor modular in the embodiment of the present invention, as shown in Figure 1, elastic force unit 5 includes the first spring assembly 51
With second spring component 52.Wherein, the first spring assembly 51 is mainly used to provide resilient support to the first chip submodule 11, into
And enhance the mechanical property of the first chip submodule 11, so that the mechanical pressure of the first chip submodule 11 is evenly distributed, second
Spring assembly 52 is mainly used to provide resilient support to the second chip submodule 12, and then enhances the machine of the second chip submodule 12
Tool characteristic, so that the mechanical pressure of the second chip submodule 12 is evenly distributed.
Power semiconductor modular in the embodiment of the present invention, the first spring assembly 51 include the first metal block 511, the second gold medal
Belong to block 512, the first conductive metal sheet 513 and the first spring means 514, in Fig. 2, the first metal block 511 and third electrode block
113 it is equal in magnitude.First conductive metal sheet 513 and the first spring means 514 are located at the first metal block 511 and the second metal block
Between 512, and by 13 semi-surrounding of the first fixed frame, the distance between the first metal block 511 and the second metal block 512 are according to
The collapsing length of one spring means 514 determines.
Power semiconductor modular in the embodiment of the present invention, in Fig. 2, the first conductive metal sheet 513 surrounds the first spring
Device 514, the outer wall of the first conductive metal sheet 513 and the first metal block 511, the second metal block 512 and the first fixed frame
13 parts contact, so that the first conductive metal sheet 513 is by the first metal block 511, the second metal block 512 and the first fixed frame
Clamped by 13.First fixed frame 13 contacts to fix the first conductive metal sheet 513 with the first conductive metal sheet 513.
Therefore, the first spring assembly 51 is clamped by the first fixed frame 13, the first metal block 511 and the second metal block 512 respectively and is become
It obtains very firm.
Specifically, it first leads sheet metal and may be constructed circle configurations or polygonized structure and surround the first spring means 514, and
First spring means 514 is usually disc spring, has certain elasticity.As shown in Figure 6A, the top of the first conductive metal sheet 513 with
The contact of first metal block 511, and be fixedly welded with the first metal block 511, the bottom end of the first conductive metal sheet 513 and the second metal
Block 512 contacts, and is fixedly welded with the second metal block 512, and therefore, 513 electric conductivity of the first conductive metal sheet after welding is preferable.
It as shown in Figure 6B, is the top view of the first conductive metal sheet 513 and the first metal block 511,512 connection structure of the second metal block.
Power semiconductor modular in the embodiment of the present invention, second spring component 52 include third metal block 521, the 4th gold medal
Belong to block 522, the second conductive metal sheet 523 and second spring device 524, in Fig. 2, the second conductive metal sheet 523 and the second bullet
For spring device 524 between third metal block 521 and the 4th metal block 522, and by 14 semi-surrounding of the second fixed frame, third is golden
Belong to the distance between block 521 and the 4th metal block 522 to be determined according to the collapsing length of second spring device 524.
Power semiconductor modular in the embodiment of the present invention, in Fig. 2, the second conductive metal sheet 523 surrounds second spring
Device 524, the outer wall and third metal block 521, the 4th metal block 522 and the second fixed frame of the second conductive metal sheet 523
14 parts contact, so that the second conductive metal sheet 523 is by third metal block 521, the 4th metal block 522 and the second fixed frame
Clamped by 14.Second fixed frame 14 contacts to fix the second conductive metal sheet 523 with the second conductive metal sheet 523.
Therefore, spring assembly becomes non-by the second fixed frame 14, third metal block 521 and the 4th metal block 522 clamping two respectively
It is often firm.
Specifically, the second conductive metal sheet 523 also may be constructed circle configurations or polygonized structure surrounds second and visits lane device
Part, and second spring device 524 is usually disc spring, has certain elasticity.As shown in Fig. 2, the top of the second conductive metal sheet 523
End is contacted with third metal block 521, and is fixedly welded with third metal block 521, the bottom end and the 4th of the second conductive metal sheet 523
Metal block 522 contacts, and is fixedly welded with the 4th metal block 522, therefore, 523 electric conductivity of the second conductive metal sheet after welding
Preferably.
Power semiconductor modular in the embodiment of the present invention, in fig. 6, in the center setting the of the first metal block 511
Two through-holes 5111, in the center setting third through-hole 5121 of the second metal block 512.In Fig. 2, pass through the second through-hole 5111 and
Three through-holes 5121 install the first insulating sleeve 15, and the first insulating sleeve 15 is located at the first metal block 511 and the second metal block 512
Between, and the first conductive metal sheet 513 and the first spring means 514 are passed through, the first end of the first insulating sleeve 15 also extends through the
Two through-holes 5111 are contacted with first through hole 1131, and the second end of the first insulating sleeve 15 is passed through in third through-hole 5121 and the second gold medal
Belong to the third groove 41 being arranged in electrode 4 to contact.In figure 2 it can be seen that the first spring means 514 is fixed on the first insulating sleeve
On 15 outer wall, therefore, the first insulating sleeve 15 can play the role of fixing the first spring means 514.
Power semiconductor modular in the embodiment of the present invention, as shown in Fig. 2, in the center setting the of third metal block 521
Four through-holes 5211 pass through fourth hole 5211 and fifth hole in the center setting fifth hole 5221 of the 4th metal block 522
5221 installation the second insulating sleeves 16, the second insulating sleeve 16 between third metal block 521 and the 4th metal block 522, and
Across the second conductive metal sheet 523 and second spring device 524, first end and the fourth hole 5211 of the second insulating sleeve 16 are connect
Touching, the second end of the second insulating sleeve 16, which is passed through, to be contacted in fifth hole 5221 with the second metal electrode 4.In figure 2 it can be seen that
Second spring device 524 is fixed on the outer wall of the second insulating sleeve 16, and therefore, the second insulating sleeve 16 can play fixation
The effect of second spring device 524.
Power semiconductor modular in the embodiment of the present invention, as shown in Fig. 2, being provided with conduction in the first insulating sleeve 15
Spring 151, one end of power spring 151 are electrically connected with the second electrode block 112 of the first chip submodule 11, power spring 151
The other end connect with PCB driving plate 6.The inside that power spring 151 is placed in the first insulating sleeve 15 is and the first chip submodule
The second electrode block 112 of block 11 is electrically connected, while can also be electrically connected with PCB driving plate 6.PCB driving plate 6 herein is bilayer
The printed circuit board of copper is covered, which is mounted in the third groove 41 being arranged in the second metal electrode 4, and third is recessed
41 grafting of slot passes through the first insulating sleeve 15 of third through-hole 5121.
Power semiconductor modular in the embodiment of the present invention, it is independent by multiple power semiconductor units 1 being set side by side
Setting, each power semiconductor units 1 are independently connected with metal electrode, are then connect by metal electrode with external circuit, when
Wherein some power semiconductor units 1 once breaks down, and can use in addition normal power semiconductor units 1 and is replaced
It changes, therefore, largely, the power semiconductor units 1 in the present embodiment can make full use of power semiconductor, into
And improve the utilization rate of chip submodule, it is possible to reduce the replacement cost of chip submodule.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (12)
1. a kind of power semiconductor modular, comprising: multiple power semiconductor units being set side by side, each power semiconductor
Unit is encapsulated in shell, and carries out resilient support by the elastic force unit in the shell, which is characterized in that each function
Rate semiconductor unit is arranged independently of each other, and is mounted between the first metal electrode and the second metal electrode, first metal
Electrode is electrically connected with each power semiconductor units, and first metal electrode and second metal electrode are respectively and outside
The electrical connection of portion's circuit.
2. power semiconductor modular according to claim 1, which is characterized in that each power semiconductor units include
First chip submodule and the second chip submodule, the first chip submodule is adjacent with the second chip submodule to be set
It sets.
3. power semiconductor modular according to claim 2, which is characterized in that the first chip submodule includes first
Electrode block, the first chip, second electrode block and third electrode block；
The first electrode block is located at the side of first chip, by first metal electrode be arranged the first groove with
The first metal electrode electrical connection；
The second electrode block is located at the center of first chip；The third electrode block is located at the another of first chip
Side, in the center setting first through hole of the third electrode block；
The first electrode block, the third electrode block are equal in magnitude with first groove.
4. power semiconductor modular according to claim 2, which is characterized in that the second chip submodule includes the 4th
Electrode block, the second chip, the 5th electrode block；
4th electrode block is located at the side of second chip, by the first metal electrode be arranged the second groove in institute
State the electrical connection of the first metal electrode；
5th electrode block is located at the other side of second chip；
4th electrode block, the 5th electrode block are equal in magnitude with second groove.
5. power semiconductor modular according to claim 3, which is characterized in that in first metal electrode and described the
The first fixed frame and the second fixed frame are additionally provided between two metal electrodes；
First fixed frame is arranged by first metal electrode, and is bonded in the two of the first chip submodule
Side, first fixed frame and the first chip submodule constitute the first semi-surrounding structure；
Second fixed frame is arranged by first metal electrode, and is bonded in the two of the second chip submodule
Side, second fixed frame and the second chip submodule constitute the second semi-surrounding structure.
6. power semiconductor modular according to claim 5, which is characterized in that first semi-surrounding structure and described
The opening of two semi-surrounding structures is towards second metal electrode；
The first insulating materials, first insulating materials and described first are filled in the space of first semi-surrounding structure
The contact of chip submodule, and the first chip submodule is not covered；
The second insulating materials, second insulating materials and described second are filled in the space of second semi-surrounding structure
The contact of chip submodule, and the second chip submodule is not covered.
7. power semiconductor modular according to claim 6, which is characterized in that the elastic force unit includes the first groups of springs
Part and second spring component；
First spring assembly includes the first metal block, the second metal block, the first conductive metal sheet and the first spring means, institute
State the equal in magnitude of the first metal block and the third electrode block；
First conductive metal sheet and first spring means be located at first metal block and second metal block it
Between, and by the first fixed frame semi-surrounding, the distance between first metal block and second metal block are according to institute
The collapsing length for stating the first spring means determines；
The second spring component includes third metal block, the 4th metal block, the second conductive metal sheet and second spring device, institute
The second conductive metal sheet and the second spring device are stated between the third metal block and the 4th metal block, and by
The second fixed frame semi-surrounding, the distance between the third metal block and the 4th metal block are according to second bullet
The collapsing length of spring device determines.
8. power semiconductor modular according to claim 7, which is characterized in that described in first conductive metal sheet surrounds
First spring means, the outer wall of first conductive metal sheet and first metal block, second metal block and described
First fixed frame part contact so that first conductive metal sheet by first metal block, second metal block with
And clamped by first fixed frame；
Second conductive metal sheet surrounds the second spring device, the outer wall of second conductive metal sheet and the third
Metal block, the 4th metal block and the contact of second fixed frame part, so that second conductive metal sheet is by institute
It states clamped by third metal block, the 4th metal block and second fixed frame.
9. power semiconductor modular according to claim 8, which is characterized in that in the center setting of first metal block
Second through-hole is pacified in the center setting third through-hole of second metal block by second through-hole and the third through-hole
The first insulating sleeve is filled, first insulating sleeve passes through between first metal block and second metal block
First conductive metal sheet and first spring means, it is logical that the first end of first insulating sleeve also extends through described second
Hole is contacted with the first through hole, and the second end of first insulating sleeve is passed through in the third through-hole and second metal
The third groove contact being arranged in electrode.
10. power semiconductor modular according to claim 9, which is characterized in that set in the center of the third metal block
Fourth hole is set, in five through-holes of center setting of the 4th metal block, is pacified by the fourth hole and the fifth hole
The second insulating sleeve is filled, second insulating sleeve passes through between the third metal block and the 4th metal block
Second conductive metal sheet and the second spring device, first end and the fourth hole of second insulating sleeve connect
Touching, the second end of second insulating sleeve, which is passed through, to be contacted in the fifth hole with second metal electrode.
11. power semiconductor modular according to claim 9, which is characterized in that be arranged in first insulating sleeve
There is power spring, one end of the power spring is electrically connected with the second electrode block of the first chip submodule, the conduction
The other end of spring is connect with PCB driving plate.
12. power semiconductor modular according to claim 11, which is characterized in that the PCB driving plate is mounted on described
In third groove, the third groove grafting passes through first insulating sleeve of the third through-hole.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490724A (en) * | 2020-11-27 | 2021-03-12 | 株洲中车时代半导体有限公司 | Disc spring assembly and power semiconductor module |
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