CN102593717B - Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser - Google Patents
Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser Download PDFInfo
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- CN102593717B CN102593717B CN201210075628.9A CN201210075628A CN102593717B CN 102593717 B CN102593717 B CN 102593717B CN 201210075628 A CN201210075628 A CN 201210075628A CN 102593717 B CN102593717 B CN 102593717B
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Abstract
The invention relates to a semiconductor laser, in particular to a semiconductor laser with an ultrathin insulating layer and a preparation method for the semiconductor laser. The semiconductor laser comprises a lower metallization layer, a lower confinement layer, a lower waveguide layer, a lower transition layer, a quantum well layer, an upper transition layer, an upper waveguide layer, an upper confinement layer, an upper metallization layer, an upper metal electrode layer, a lower metal electrode layer, an anti-reflection film plated on a front cavity surface and a high-reflection thin film plated on a rear cavity surface on a substrate. At least two grooves are reserved on the surface of the upper metallization layer between the upper metallization layer and the upper metal electrode layer. Current carrier confinement insulating bumps are arranged between every two adjacent grooves. The preparation method comprises the following steps of: preparing the grooves on the upper metallization layer by utilizing a photoetching technology and an etching technology, and depositing current carrier confinement layers on the metallization layers; and reducing the current carrier confinement layers between the grooves to form the current carrier confinement insulting bumps. The insulating layer is thin, so that the semiconductor laser can be rapidly radiated, the power of the semiconductor laser can be improved, and the service life of the semiconductor laser can be prolonged.
Description
Technical field
The invention belongs to field of photoelectric technology, be specifically related to a kind of semiconductor laser, particularly
Ultrathin insulating layer semiconductor laser and preparation method thereof.
Background technology
Semiconductor laser (DL) is an important directions of laser developments in recent years, because its volume is little, the features such as power is high, and the life-span is long, the laser weapon in medical treatment, industrial or agricultural processing and military field, range finding, guidance, the spy aspect such as dive has extremely wide application prospect.In current semiconductor laser, in order to prevent lateral light concussion, generally all can take certain light quarantine measures, to ensure producing vibration in direction that laser only wishes designer.The method of light isolation has physical isolation method and carrier confinement method.Wherein carrier confinement method is exactly near the electrode of semiconductor laser, to make some insulating barriers, stops the injection of charge carrier, more than ensureing that general this insulating barrier of effect of carrier confinement all needs to prepare 100nm.But because insulating layer material is mostly metal oxide materials, its thermal conductivity is lower, and therefore blocked up insulating barrier can make the heat radiation difficulty of semiconductor laser, improve the working temperature of semiconductor laser, reduce power and the life-span of semiconductor laser.
Summary of the invention
The object of the invention is to be to overcome above-mentioned the deficiencies in the prior art, provide one to have radiating efficiency high, working temperature is low, ultrathin insulating layer semiconductor laser that power output and life-span are higher and preparation method thereof.
Solution of the present invention is: a kind of ultrathin insulating layer semiconductor laser, comprise the lower metal layer on substrate, lower limit layer, lower waveguide layer, lower transition zone, quantum well layer, upper transition zone, upper ducting layer, upper limiting layer, upper metal layer, upper and lower metal electrode layer, the anti-reflection film that front rear facet plates respectively and high reflective film, be characterized in that the upper metal layer surface between upper metal layer and upper metal electrode layer has at least two grooves, is provided with carrier confinement insulation projection between two adjacent trenches.
In the present invention, the effect of groove is to utilize physics to cut off the horizontal concussion of ducting layer restriction light, but because groove structure has compared with macrolesion for the mechanical performance of chip, that can not make is too intensive, need to be used in conjunction with insulating barrier projection, the protruding role of insulating barrier is to stop this region of carrier injection, plays the gain of light effect effect weakening in one's respective area, and then restriction light field is at this region acquisition energy, so played the horizontal concussion of restriction light.Carrier confinement effect and its insulation characterisitic of insulating barrier projection are closely related, insulation characterisitic is closely related with method for manufacturing thin film again, adopt insulating barrier of the present invention can obtain the insulating barrier that compactness is higher, therefore can use thinner insulating barrier to play the effect of existing insulating barrier.
Spacing in solution of the present invention between carrier confinement insulation projection equates.
Its effect is the carrier injection of restriction to one's respective area, thereby the gain of light characteristic in restriction one's respective area stops light laterally producing concussion.Carrier confinement height of projection is 1-50nm.
The preparation method of above-mentioned ultrathin insulating layer semiconductor laser, is characterized in comprising the following steps:
A, on substrate metal layer under epitaxial growth successively, lower limit layer, lower waveguide layer, lower transition zone, quantum well layer, upper transition zone, upper ducting layer, upper limiting layer, upper metal layer;
B, employing photoetching technique and lithographic technique are prepared groove at upper metal layer, then on metal layer, deposit carrier confining layer;
C, the carrier confining layer between groove is reduced, form mutual spaced carrier confinement insulation projection, the carrier confining layer at interval is reduced:
D, prepare metal electrode layer, carry out cleavage, front facet plating anti-reflection film, rear facet plates high reflective film, and chips welding is to heat sink, pressure welding contact conductor.
In preparation method's of the present invention solution, carrier confining layer is reduced the method for utilizing chemical wet etching or peeling off.
In preparation method's of the present invention solution, deposit carrier confinement insulating barrier method and adopt atomic layer deposition method or plasmaassisted atomic layer deposition method or metal autoxidation method.Metal autoxidation method is first to deposit layer of metal material on metal layer (10) surface, and then is placed on a period of time in air or in oxygen, the oxidation meeting self-assembling formation metal oxide insulating barrier of oxygen to metal, i.e. carrier confining layer.
In preparation method's of the present invention solution, carrier confinement layer material adopts yittrium oxide or aluminium oxide or hafnium oxide or silica or zirconia.
Advantage of the present invention: the present invention has at least two grooves by the upper metal layer surface between upper metal layer and upper metal electrode layer, is provided with carrier confinement insulation projection between two adjacent trenches.Its insulating barrier of semiconductor laser is very fine and close simultaneously, insulation property are better than traditional preparation method, so the thickness of insulating barrier can be reduced to 1-50nm, thickness of insulating layer reduces can make the heat radiation of semiconductor laser quicker, is conducive to the raising in semiconductor laser power and life-span.
Brief description of the drawings
Fig. 1 is the semiconductor laser structure schematic diagram that the present invention strengthens heat radiation;
Fig. 2 is the carrier confinement protruding Local map that insulate between two grooves.
Embodiment
Embodiment: the embodiment of the present invention as shown in Figure 1 and Figure 2: taking wide semiconductor laser as example, the method for preparing ultrathin insulating layer semiconductor laser comprises the following steps:
1, epitaxial growth semiconductor laser structure successively on substrate 1, comprising: lower metal layer 2, lower limit layer 3, lower waveguide layer 4, lower transition zone 5, quantum well layer 6, upper transition zone 7, upper ducting layer 8, upper limiting layer 9, upper metal layer 10.
2, adopt photoetching technique and lithographic technique to prepare 12 grooves 17 at upper metal layer 10.
3, utilize atomic layer deposition method to prepare carrier confinement insulating barrier 14, carrier confinement layer material adopts yittrium oxide, and carrier confinement insulating barrier 14 is highly 10nm.
4, the carrier confining layer between groove 17 14 is reduced, form mutual spaced carrier confinement insulation projection 14, spacing between carrier confinement insulation projection 14 equates, the insulate carrier confining layer at protruding 14 intervals of carrier confinement is reduced, and cutting method adopts chemical wet etching method.
5, adopt lithography stripping to prepare metal electrode layer 11,12.
6, at front facet deposition anti-reflection film, at rear facet deposition highly reflecting films,
7, chips welding is to heat sink, pressure welding contact conductor.
Claims (7)
1. a ultrathin insulating layer semiconductor laser, comprise the lower metal layer (2) on substrate (1), lower limit layer (3), lower waveguide layer (4), lower transition zone (5), quantum well layer (6), upper transition zone (7), upper ducting layer (8), upper limiting layer (9), upper metal layer (10), upper and lower metal electrode layer (11, 12), the anti-reflection film that front rear facet plates respectively and high reflective film, it is characterized in that upper metal layer (10) surface between upper metal layer (10) and upper metal electrode layer (12) has at least two grooves (17), between two adjacent trenches (17), be provided with carrier confinement insulation projection (14),
Carrier confinement projection (14) is highly 1-50nm.
2. ultrathin insulating layer semiconductor laser according to claim 1, is characterized in that the spacing between carrier confinement insulation projection (14) equates.
3. a preparation method for ultrathin insulating layer semiconductor laser as claimed in claim 1, is characterized in that comprising the following steps:
A, on substrate (1) metal layer (2) under epitaxial growth successively, lower limit layer (3), lower waveguide layer (4), lower transition zone (5), quantum well layer (6), upper transition zone (7), upper ducting layer (8), upper limiting layer (9), upper metal layer (10);
B, employing photoetching technique and lithographic technique are prepared groove (17) at upper metal layer (10), then in the upper deposition of metal layer (10) carrier confining layer;
C, the carrier confining layer between groove (17) is reduced, form mutual spaced carrier confinement insulation projection (14), the carrier confining layer at interval is reduced:
D, prepare metal electrode layer (11,12), carry out cleavage, front facet plating anti-reflection film, rear facet plates high reflective film, and chips welding is to heat sink, pressure welding contact conductor.
4. the preparation method of ultrathin insulating layer semiconductor laser according to claim 3, is characterized in that carrier confining layer reduces the method for utilizing chemical wet etching or peeling off.
5. the preparation method of ultrathin insulating layer semiconductor laser according to claim 3, is characterized in that depositing carrier confinement insulating barrier method and adopts atomic layer deposition method or plasmaassisted atomic layer deposition method or metal autoxidation method.
6. the preparation method of ultrathin insulating layer semiconductor laser according to claim 3, is characterized in that carrier confinement layer material adopts yittrium oxide or aluminium oxide or hafnium oxide or silica or zirconia.
7. the preparation method of ultrathin insulating layer semiconductor laser according to claim 5, it is characterized in that metal autoxidation method is first to deposit layer of metal material on metal layer (10) surface, and then be placed on a period of time in air or in oxygen, the oxidation meeting self-assembling formation metal oxide insulating barrier of oxygen to metal, i.e. carrier confining layer.
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| CN201210075628.9A CN102593717B (en) | 2012-03-21 | 2012-03-21 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
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| CN102593717A CN102593717A (en) | 2012-07-18 |
| CN102593717B true CN102593717B (en) | 2014-12-03 |
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| CN106356715A (en) * | 2015-07-16 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser and preparation method thereof |
| CN106451075A (en) * | 2016-10-31 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and preparation method thereof |
| CN106602404A (en) * | 2016-12-30 | 2017-04-26 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and manufacturing method thereof |
| CN107910748A (en) * | 2017-10-30 | 2018-04-13 | 深圳瑞波光电子有限公司 | Semiconductor laser bar, semiconductor laser single tube and preparation method thereof |
| CN112636164A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Ultrathin insulating layer semiconductor laser and preparation method thereof |
Citations (3)
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| EP0924822A2 (en) * | 1997-12-15 | 1999-06-23 | Xerox Corporation | Vertical cavity surface emitting semiconductor lasers and their method of fabrication |
| JP3510305B2 (en) * | 1994-02-22 | 2004-03-29 | 三菱電機株式会社 | Semiconductor laser manufacturing method and semiconductor laser |
| CN101188345A (en) * | 2007-11-30 | 2008-05-28 | 张丹心 | Semiconductor laser array and its making method |
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| JP4316171B2 (en) * | 2001-03-27 | 2009-08-19 | 富士フイルム株式会社 | Semiconductor laser device and manufacturing method thereof |
| JP2005135956A (en) * | 2003-10-28 | 2005-05-26 | Mitsubishi Electric Corp | Semiconductor optical amplifier, its manufacturing method, and optical communication device |
| CN1805027A (en) * | 2005-01-14 | 2006-07-19 | 中国科学院半导体研究所 | High power 650nm semiconductor laser for digital multi-purpose optical disks and manufacturing method |
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| JP3510305B2 (en) * | 1994-02-22 | 2004-03-29 | 三菱電機株式会社 | Semiconductor laser manufacturing method and semiconductor laser |
| EP0924822A2 (en) * | 1997-12-15 | 1999-06-23 | Xerox Corporation | Vertical cavity surface emitting semiconductor lasers and their method of fabrication |
| CN101188345A (en) * | 2007-11-30 | 2008-05-28 | 张丹心 | Semiconductor laser array and its making method |
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| JP特许第3510305号B2 2004.01.09 * |
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