CN102694341A - Etching heat dissipation enhanced type vertical-cavity surface-emitting laser - Google Patents
Etching heat dissipation enhanced type vertical-cavity surface-emitting laser Download PDFInfo
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- CN102694341A CN102694341A CN2011100727690A CN201110072769A CN102694341A CN 102694341 A CN102694341 A CN 102694341A CN 2011100727690 A CN2011100727690 A CN 2011100727690A CN 201110072769 A CN201110072769 A CN 201110072769A CN 102694341 A CN102694341 A CN 102694341A
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Abstract
The invention relates to an etching heat dissipation enhanced type vertical-cavity surface-emitting laser. A wet etching method or a dry etching method is employed to remove portions of corresponding substrate in the center of the substrate so as to form substrate grooves that are filled with solders with high thermal conductivity; therefore, blocking of heat diffusion to a heat sink by the substrate can be weakened, wherein the heat is generated in an active area, so that close contact between the active gain area and a radiating fin or the heat sink is realized, the heat generated by the active gain area can be well dissipated, and an enhanced heat dissipation effect can be realized. Meanwhile, the influence of portions of the substrate on forming of series resisters of the laser can be reduced. Compared with a traditional vertical-cavity surface-emitting laser with direct welding of a substrate and a radiating fin or a sink, the provided laser with the above-mentioned structure enables a heat dissipation capability to be enhanced by over 30%, an optical output power of the laser to be improved by over 20% and electrical-to-optical conversion efficiency of the laser to be enhanced by over 20%, thereby overcoming defects existing in the current structure.
Description
Technical field
The invention belongs to field of semiconductor lasers, relate to a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser.
Background technology
Vertical cavity surface emitting laser is one of most active research topic of current photoelectron laser technology field as a kind of novel semi-conductor laser.Compare with edge-emission semiconductor laser, vertical cavity surface emitting laser with its circular symmetry light beam, far-field divergence angle is little and the characteristics that are easy to form the planar array are with a wide range of applications in fields such as laser communication, laser display, materials processing, medical treatment and defence engineerings.Particularly it is easy to form the flat two-dimensional arrays laser, in fields such as parallel laser communication, parallel laser data processing very large research and development prospect is arranged.Meanwhile, high-power vertical cavity surface emitting laser and array device are in the laser pumping technology, and nonlinear effect and laser processing etc. has also shown good development potentiality.The vertical cavity surface emitting laser device architecture mainly comprises: light-emitting window, light-emitting window anti-reflection film, top electrode, last distribution Bragg reflector, oxidation limiting layer, active gain district, following distribution Bragg reflector, substrate, bottom electrode etc.; Individual laser package when welding, bottom electrode through scolder be welded to heat sink on, in order further to improve the radiating effect of device, can bottom electrode and heat sink between add fin, be generally metallized diamond heat sink.Laser injects work under the pumping energisation mode at electricity; Form the Stimulated Light amplification in the active gain district, in the resonant cavity that distribution Bragg reflector forms up and down, produce vibration, and from the outgoing of last distribution Bragg reflector process light-emitting window; In order to increase the outgoing effect, increase the plating anti-reflection film.The heat that the active gain district produced when vertical cavity surface emitting laser was worked under electricity injection pumping energisation mode need be passed through distribution Bragg reflector and substrate down, is shed heat to heat sink by fin again; Since active gain district and fin or heat sink between have thicker substrate to be separated by, reduced the heat-sinking capability of Laser Devices, reduced the bright dipping of laser
Power, also reduced the job stability of laser,
ForReduce these adverse effects, substrate will be thinned processing usually, but also have the substrate of 150-200 micron.(list of references (1) Journal of materials science:materials inelectronics, 15 (2004) pp.115-117, (2) Journal of vacuum science&technology B; 23 (4) (2005); Pp.1428-1433, (3) Journal of crystal growth, 272 (1-4) (2004); Pp.549-554) therefore need a kind of better vertical-cavity surface emitting laser structure; Strengthen the heat-sinking capability of Laser Devices, improve the electro-optical efficiency of laser, strengthen the job stability of laser.
Summary of the invention
In order to solve the problem that prior art exists, the present invention proposes a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser.
A kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention comprises anti-reflection film, top electrode, last distribution Bragg reflector, oxidation limiting layer, active gain district and the following distribution Bragg reflector that connects in order; And anti-reflection film also is connected with last distribution Bragg reflector; Last distribution Bragg reflector also is connected with the active gain district; Anti-reflection film in the middle of the described top electrode is a light-emitting window; The shape of oxidation limiting layer is identical with the shape of top electrode, and middle body forms electric current and injects window; It is characterized in that; Thereby the central authorities of described substrate adopt wet etching or dry etching method to remove corresponding substrate and form substrate trenches; The upper surface of this substrate trenches contacts with the corresponding part of the lower surface of following distribution Bragg reflector; Lower surface and described substrate trenches surface along substrate make bottom electrode, in the substrate trenches of having made bottom electrode, fill high heat conduction scolder, so that better heat radiation; Bottom electrode is welded to fin, fin be welded to heat sink on;
Active gain district and fin, heat sink realization close contact, the heat that the active gain district produces can pass through down distribution Bragg reflector directly to fin, heat sinkly well spread, strengthened radiating effect;
The cycle logarithm of distribution Bragg reflector is many 3 to 50 pairs on the cycle logarithm ratio of described following distribution Bragg reflector, guarantees the light-emitting window outgoing of laser from the vertical cavity surface of last distribution Bragg reflector.
This structure can be applicable to also can be applicable in the OLED structure design in III-V and II-VI family semiconductor laser or the panel detector structure design.
When a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention was worked: laser injected the work of pumping energisation mode with electricity; Electric current is the utmost point and bottom electrode injection from power on; Injected electrons and hole are carried out compound in the active gain district; The generation Stimulated Light is amplified, and the resonant cavity modeling vibration through being made up of last distribution Bragg reflector and following distribution Bragg reflector, swashs and penetrates the light-emitting window outgoing of light from last distribution Bragg reflector and anti-reflection film formed vertical cavity surface.
Beneficial effect: a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention; Central authorities at substrate adopt wet etching or dry etching method to remove corresponding substrate formation substrate trenches; The substrate trenches that forms is filled by high heat conduction scolder, reduces the obstruct of substrate to the hot heat sink diffusion of active area generation, makes active gain district and fin or heat sink realization close contact; Realization is carried out good thermolysis to the heat that the active gain district produces, and realizes strengthening radiating effect; Meanwhile can also reduce of the contribution of part substrate to the laser series resistance.Compare with fin or heat sink direct welding with traditional vertical cavity surface emitting laser substrate; The laser of this structural design strengthens heat-sinking capability more than 30%; The optical output power that improves Laser Devices is more than 20%; Improve the device electro-optical conversion efficiency more than 20%, overcome the deficiency of existing structure.
Description of drawings
Fig. 1 is the profile of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser front view of embodiment 1.
Fig. 2 is the profile of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser 3 * 3 flat two-dimensional arrays device front views of embodiment 3.
Embodiment
Embodiment 1
Fig. 1 is the profile of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser front view of embodiment 1.
The formation of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention comprises anti-reflection film 1, top electrode 2, upward distribution Bragg reflector 3, oxidation limiting layer 4, active gain district 5 are connected with following distribution Bragg reflector 6 in order; And anti-reflection film 1 also is connected with last distribution Bragg reflector 3; Last distribution Bragg reflector 3 also is connected with active gain district 5; Anti-reflection film 1 in the middle of the described top electrode 2 is a light-emitting window; The shape of oxidation limiting layer 4 is identical with the shape of top electrode 2, and middle body forms electric current and injects window; It is characterized in that; Thereby the central authorities of described substrate 7 adopt wet etching or dry etching method to remove corresponding substrate and form substrate trenches 11; The upper surface of this substrate trenches contacts with the corresponding part of the lower surface of following distribution Bragg reflector 6; Make bottom electrode 8 along the lower surface of substrate 7 and the surface of described substrate trenches 11, in the substrate trenches of having made bottom electrode 11, fill high heat conduction scolder, so that better heat radiation; Bottom electrode 8 is welded to fin 9, and fin 9 is welded on heat sink 10.
The cycle logarithm of distribution Bragg reflector is many 3 to 50 pairs on the cycle logarithm ratio of described following distribution Bragg reflector, guarantees the light-emitting window outgoing of laser from the vertical cavity surface of last distribution Bragg reflector.
When a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention was worked: laser injected the work of pumping energisation mode with electricity; Electric current is the utmost point and bottom electrode injection from power on; Injected electrons and hole are carried out compound in the active gain district; The generation Stimulated Light is amplified, and the resonant cavity modeling vibration through being made up of last distribution Bragg reflector and following distribution Bragg reflector, swashs and penetrates light from the light-emitting window outgoing of last distribution Bragg reflector with circular anti-reflection film formed vertical cavity surface.
The concrete technical data of present embodiment is following: circular anti-reflection film 1 is the anti-reflection film to excitation wavelength 800-850nm, the circular anti-reflection film 1 of light-emitting window half through being 50 microns; Top electrode 2 is Ti-Pt-Au electrodes; Last distribution Bragg reflector 3 adopts p type AlGaAs/AlAs periodic structure, 28 pairs of periodicities; Oxidation limiting layer 4 is the AlGaAs material of high Al component; The mass content of Al component is 0.98; Under 400 ℃ of water vapor atmosphere of high temperature, through the oxidized formation insulating material of high warm and humid nitrogen, injection current is played restriction, the electric current that forms 50 microns of radiuses injects window; Active gain district 5 is a GaAs/AlGaAs MQW gain region; Following distribution Bragg reflector 6 is a n type AlGaAs/AlAs periodic structure, and periodicity is 40 pairs, and substrate 7 is the GaAs backing material; Bottom electrode 8 is the Au-Ge-Ni electrode; Fin 9 adopts metallized diamond heat sink or aluminium nitride, or the beryllium oxide material; Heat sink 10 adopt fine copper or oxygen-free copper or red copper; Scolder 11 adopts the Au-Sn solder.Adopt the micromechanics mounting technology chip of laser, fin and heat sink etc. to be carried out the assembling of laser.
The formation of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser of the present invention is with embodiment 1.
The concrete technical data of present embodiment is following: circular anti-reflection film 1 is the anti-reflection film to excitation wavelength 650-670nm, the circular anti-reflection film 1 of light-emitting window half through being 50 microns; Top electrode 2 is Au-Zn alloy electrodes; Last distribution Bragg reflector 3 adopts p type AlGaAs/AlAs periodic structure, 40 pairs of periodicities; Oxidation limiting layer 4 is the AlGaAs material of high Al component; The mass content of Al component is 0.98; Under 400 ℃ of water vapor atmosphere of high temperature, through the oxidized formation insulating material of high warm and humid nitrogen, injection current is played restriction, the electric current that forms 50 microns of radiuses injects window; Active gain district 5 is an AlGaInP/GaInP MQW gain region; Following distribution Bragg reflector 6 is a n type AlGaAs/AlAs periodic structure, and periodicity is 70 pairs, and substrate 7 is the GaAs backing material; Bottom electrode 8 is the Au-Ge-Ni electrode; Fin 9 adopts metallized diamond heat sink or aluminium nitride, or the beryllium oxide material; Heat sink 10 adopt fine copper or oxygen-free copper or red copper; Scolder 11 adopts the Au-Sn solder.
Fig. 2 is the profile of a kind of etching heat radiation enhancement mode vertical cavity surface emitting laser 3 * 3 flat two-dimensional arrays device front views of embodiment 3.
A kind of etching heat radiation enhancement mode vertical cavity surface emitting laser forms 3 * 3 flat two-dimensional arrays devices, and each unit laser structure is identical with embodiment 1 or 2 in the array laser device.
Embodiment 4
When the current injection area of vertical cavity surface emitting laser is very little, when promptly radius is less than 20 microns, when the corresponding substrate side raceway groove that need open is very little, adopt the size of the raceway groove opened can be bigger than current injection area, strengthen filling out of scolder.
Claims (1)
1. etching heat radiation enhancement mode vertical cavity surface emitting laser, its formation comprise the anti-reflection film (1), the top electrode (2) that connect in order, go up distribution Bragg reflector (3), oxidation limiting layer (4), active gain district (5) and following distribution Bragg reflector (6); And anti-reflection film (1) also is connected with last distribution Bragg reflector (3); Last distribution Bragg reflector (3) also is connected with active gain district (5); Anti-reflection film (1) in the middle of the described top electrode (2) is a light-emitting window; The shape of oxidation limiting layer (4) is identical with the shape of top electrode (2), and its middle body forms electric current and injects window; It is characterized in that; Described substrate (7) thus central authorities adopt wet etching or dry etching method to remove corresponding substrate to form substrate trenches; The upper surface of this substrate trenches contacts with the corresponding part of the lower surface of following distribution Bragg reflector (6); Make bottom electrode (8) along the lower surface of substrate (7) and the surface of described substrate trenches (11), in the substrate trenches of having made bottom electrode (11), fill high heat conduction scolder; Bottom electrode 8 is welded to fin (9), and fin (9) is welded on heat sink (10); The cycle logarithm of distribution Bragg reflector (3) is many 3 to 50 pairs on the cycle logarithm ratio of described following distribution Bragg reflector (6).
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| CN110829178A (en) * | 2019-11-08 | 2020-02-21 | 长春理工大学 | Distributed Bragg reflector vertical cavity surface emitting semiconductor laser under annular structure |
| CN110943369A (en) * | 2018-09-21 | 2020-03-31 | 阿尔戈人工智能有限责任公司 | Monolithic series connected laser diode array and method of forming same |
| CN111129942A (en) * | 2019-12-31 | 2020-05-08 | 长春理工大学 | Device-matched efficient heat-dissipation semiconductor substrate and preparation method thereof |
| CN111180995A (en) * | 2019-11-19 | 2020-05-19 | 浙江博升光电科技有限公司 | Substrate transfer vertical cavity surface emitting laser and method of manufacturing the same |
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| CN113540963A (en) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | Laser assembly |
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| CN113725729A (en) * | 2021-09-02 | 2021-11-30 | 厦门市三安集成电路有限公司 | High-heat-dissipation vertical-cavity surface-emitting laser and manufacturing method thereof |
| WO2023238429A1 (en) * | 2022-06-08 | 2023-12-14 | 株式会社村田製作所 | Vertical cavity surface emitting laser |
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| JP7210663B2 (en) | 2017-08-31 | 2023-01-23 | アップル インコーポレイテッド | Generation of Arbitrary Patterns on Two-Dimensional Uniform Grid VCSEL Arrays |
| JP2021182640A (en) * | 2017-08-31 | 2021-11-25 | アップル インコーポレイテッドApple Inc. | Creating arbitrary patterns on 2-d uniform grid vcsel array |
| CN108957767A (en) * | 2018-07-16 | 2018-12-07 | 湖北三江航天红林探控有限公司 | High power light energy choking device |
| CN110943369A (en) * | 2018-09-21 | 2020-03-31 | 阿尔戈人工智能有限责任公司 | Monolithic series connected laser diode array and method of forming same |
| CN110829178A (en) * | 2019-11-08 | 2020-02-21 | 长春理工大学 | Distributed Bragg reflector vertical cavity surface emitting semiconductor laser under annular structure |
| CN110829178B (en) * | 2019-11-08 | 2021-03-26 | 长春理工大学 | Distributed Bragg reflector vertical cavity surface emitting semiconductor laser under annular structure |
| CN111180995A (en) * | 2019-11-19 | 2020-05-19 | 浙江博升光电科技有限公司 | Substrate transfer vertical cavity surface emitting laser and method of manufacturing the same |
| CN111129942A (en) * | 2019-12-31 | 2020-05-08 | 长春理工大学 | Device-matched efficient heat-dissipation semiconductor substrate and preparation method thereof |
| CN113540962A (en) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | Laser assembly |
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| CN112490851A (en) * | 2020-11-30 | 2021-03-12 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper and lower electrodes arranged in staggered manner |
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Application publication date: 20120926 |