CN107910747A - More ridge type semiconductor lasers and preparation method thereof - Google Patents
More ridge type semiconductor lasers and preparation method thereof Download PDFInfo
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- CN107910747A CN107910747A CN201711320789.9A CN201711320789A CN107910747A CN 107910747 A CN107910747 A CN 107910747A CN 201711320789 A CN201711320789 A CN 201711320789A CN 107910747 A CN107910747 A CN 107910747A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a kind of more ridge type semiconductor lasers and preparation method thereof, more ridge type semiconductor lasers include substrate, the epitaxial structure being formed on the substrate, the top of the epitaxial structure has ridge type semiconductor layer, the ridge type semiconductor layer includes multiple ridge portions, more ridge type semiconductor lasers further include multiple top electrodes, and the multiple top electrode is formed in the multiple ridge portion and is corresponded with the multiple ridge portion.Between multiple ridge portions of more ridge type semiconductor lasers provided by the invention independently of each other, when when one of ridge portion, corresponding active area is degenerated, laser can also use other ridge portions and top electrode to work, so as to extend the service life of laser, at the same time, laser output power can be adjusted by controlling the quantity in the ridge portion worked at the same time, so as to add the adjustable range of laser output power.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of more ridge type semiconductor lasers and preparation method thereof.
Background technology
Gallium nitride base semiconductor laser has the advantages that small, coupling efficiency is high, fast response time, leads in laser
Letter, laser lighting and display, laser radar and laser medicine etc. have been widely used.In gallium nitride-based semiconductor
During laser application, the optical output power of laser and service life are particularly important.Gallium nitride base semiconductor laser at present
Service life has reached hours up to ten thousand, but this can not meet the application fields such as laser display, laser medicine to semiconductor laser
The requirement in the service life of device, so as to limit the expansion of semiconductor laser application field.
The reason for most of gallium nitride base semiconductor laser failures is the degeneration in laser active area.Common gallium nitride
Base semiconductor laser Chip-wide is usually at 100~400 μm, and active area (ridge) width of real work only has 2~45 μ
M, i.e. laser only have the active area (2~45 μm) below ridge to degenerate during the work time, the active area beyond ridge
Have no significant change.Traditional gallium nitride base semiconductor laser is divided into single ridge and more ridges, in single ridge laser structures
In, degeneration, which occurs, for the active area below ridge will cause whole chip failure, likewise, in more ridge high power laser structures
In, as long as the active area below one of ridge, which is degenerated, may result in whole chip failure, so as to limit gallium nitride base half
The service life of conductor laser.
The content of the invention
To solve the above-mentioned problems, the present invention proposes a kind of more ridge type semiconductor lasers and preparation method thereof, Neng Gouyan
Increase the adjustable range of the output power of laser while long-life.
Concrete technical scheme proposed by the present invention is：A kind of more ridge type semiconductor lasers are provided, more ridges are partly led
Body laser includes substrate, the epitaxial structure being formed on the substrate, and the top of the epitaxial structure has ridge type semiconductor
Layer, the ridge type semiconductor layer include multiple ridge portions, and more ridge type semiconductor lasers further include multiple top electrodes, described
Multiple top electrodes are formed in the multiple ridge portion and are corresponded with the multiple ridge portion.
Further, the number in the multiple ridge portion is 2~10.
Further, the width in the multiple ridge portion is 2~45 μm.
Further, the width in the multiple ridge portion is equal, and in the multiple ridge portion two ridge portions of arbitrary neighborhood
Between spacing it is equal.
Further, the epitaxial structure includes lower limit layer, the lower ripple being set in turn in from below to up on the substrate
Conducting shell, active layer, upper ducting layer and upper limiting layer, the upper limiting layer are the ridge type semiconductor layer.
Further, more ridge type semiconductor lasers further include hearth electrode, insulating layer and multiple Ohm contact electrodes,
The hearth electrode is formed at the bottom of the substrate；The multiple Ohm contact electrode be respectively formed in the multiple ridge portion with
Corresponded between the multiple top electrode and with the multiple ridge portion, the insulating layer is formed at the multiple ridge portion and appoints
Between two adjacent ridge portions of meaning and extend to the side of the multiple ridge portion, multiple Ohm contact electrodes and multiple top electrodes
Face.
Further, the thickness of the multiple top electrode is equal with the thickness of the hearth electrode and is 0.1~5 μm.
Further, the material of the substrate is n type gallium nitride, and the material of the lower limit layer is N-type aluminium gallium nitride alloy, institute
The material for stating lower waveguide layer is N-type InGaN, and the material of the upper ducting layer is p-type InGaN, the upper limiting layer
Material is p-type aluminium gallium nitride alloy/gallium nitride superlattice structure, and the material of the insulating layer is silica, the Ohmic contact electricity
Pole includes three electrode layers that lamination is set, and the material of three electrode layers is followed successively by palladium/platinum/gold, and the active layer is more
Quantum well structure, it includes the gallium nitride barrier layer of alternating growth and InGaN potential well layer.
Present invention also offers a kind of production method of more ridge type semiconductor lasers, the production method includes step：
There is provided a substrate and the substrate grown on top formed with epitaxial structure；
In the grown on top electrode layer of the epitaxial structure；
The electrode layer and the epitaxial structure are etched using etching technics, ridge is formed at the top of the epitaxial structure
Semiconductor layer and multiple top electrodes, the ridge type semiconductor layer include multiple ridge portions, and the multiple top electrode is formed at described
Corresponded in multiple ridge portions and with the multiple ridge portion.
Further, the step application etching technics etches the etching technics in the electrode layer and the epitaxial structure
For dry or wet etch technique.
More ridge type semiconductor lasers provided by the invention include ridge type semiconductor layer and multiple top electrodes, the ridge half
Conductor layer includes multiple ridge portions, the multiple top electrode be formed in the multiple ridge portion and with the multiple ridge portion one
One corresponds to, and between the multiple ridge portion independently of each other, when when one of ridge portion, corresponding active area is degenerated, laser is also
Other ridge portions and top electrode can be used to work, so that the service life of laser is extended, meanwhile, control can be passed through
The quantity in ridge portion that works at the same time is made to adjust laser output power, so as to add the adjusting model of laser output power
Enclose.
Brief description of the drawings
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, feature and advantage of the embodiment of the present invention
It will become clearer, in attached drawing：
Fig. 1 is the structure diagram of more ridge type semiconductor lasers；
Fig. 2 a to Fig. 2 e are the production process figure of more ridge type semiconductor lasers.
Embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
Apply the present invention, and the specific embodiment of the invention that should not be construed as limited to illustrate here.Conversely, there is provided these implementations
Example is in order to explain the principle of the present invention and its practical application, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
With reference to Fig. 1, the present embodiment provides more ridge type semiconductor lasers to include substrate 1, the epitaxy junction being formed on substrate 1
Structure 2, the top of epitaxial structure 2 have ridge type semiconductor layer 20, and ridge type semiconductor layer 20 includes multiple ridge portion 20a, more ridges
Semiconductor laser further includes multiple top electrodes 3, multiple top electrodes 3 be formed on multiple ridge portion 20a and with multiple ridge portions
20a is corresponded.
Each ridge portion 20a in the present embodiment corresponds to a top electrode 3, is electrically connected between multiple ridge portion 20a
When it is separate, when the corresponding active areas of a ridge portion 20a are degenerated wherein, more ridge type semiconductor lasers can select
Other ridge portion 20a and top electrode 3 work, so as to extend the service life of laser.In addition, more ridge type semiconductors swash
Light device can adjust laser output power by controlling the quantity of the ridge portion 20a worked at the same time, so as to add laser
The adjustable range of output power.For example, in order to obtain larger output power, more ridge portion 20a and top electricity can be selected
Pole 3 works, if larger output power is not required, less ridge portion 20a and top electrode 3 can be selected to carry out work
Make.
The number of ridge portion 20a is 2~10 in the present embodiment, and the shape of ridge portion 20a is strip, multiple ridge portions
The width of 20a is 2~45 μm.Wherein, the width of multiple ridge portion 20a and height can be equal, can not also be equal.Multiple ridges
Spacing in type portion 20a between two ridge portion 20a of arbitrary neighborhood can be equal, can not also be equal.It is preferred that multiple ridges
Spacing between the width of portion 20a, height and two neighboring ridge portion 20a is equal.Certainly, during actual fabrication,
The distance between height, width and two neighboring ridged portion 20a of each ridged portion 20a can be set as needed.
The a length of 300 μm~2mm of chamber of more ridge type semiconductor lasers in the present embodiment, more ridge type semiconductor lasers
Front cavity surface is coated with 0~2 layer of anti-reflection film, and each layer of anti-reflection film includes high refractive index film and low refractive index film, multi-layered antireflection coating according to
The front cavity surface away from more ridge type semiconductor lasers is set the alternate order of high refractive index film, low refractive index film successively.More ridges
The rear facet of semiconductor laser is coated with 5~10 layers of high-reflecting film, and each layer of high-reflecting film includes high refractive index film and low refractive index film,
Multilayer high-reflecting film is according to the back cavity of high refractive index film, the alternate order of low refractive index film successively away from more ridge type semiconductor lasers
Face is set.The material of high refractive index film is tantalum oxide (Ta in the present embodiment2O5), the material of low refractive index film is silica
(SiO2)。
As a specific example, the number of the ridge portion 20a in the present embodiment is 3, and the width of ridge portion 20a is 10
μm, the width of more ridge type semiconductor lasers is 200 μm, a length of 400 μm of chamber, and the front cavity surface of more ridge type semiconductor lasers does not have
Anti-reflection film is plated, the rear facet of more ridge type semiconductor lasers is coated with 5 layers of high-reflecting film.
As a specific example, the number of the ridge portion 20a in the present embodiment is 5, and the width of ridge portion 20a is 4 μ
M, the width of more ridge type semiconductor lasers is 400 μm, a length of 800 μm of chamber, and the front cavity surface of more ridge type semiconductor lasers is coated with 1
Layer anti-reflection film, the rear facet of more ridge type semiconductor lasers are coated with 7 layers of high-reflecting film.
, will more ridges half during being packaged to more ridge type semiconductor lasers by the way of p-type upside-down mounting
Conductor laser is inverted on heat sink, wherein, it is heat sink it is upper by evaporation process formed with multiple mutually independent patterned electrodes,
Multiple images polarizing electrode is respectively used to be electrically connected with multiple top electrodes 3.Heat sink substrate is aluminium nitride or diamond, graphically
Electrode includes three electrode layers that lamination is set, and the material of three electrode layers is followed successively by titanium/platinum/gold, wherein, three electrode layers
Thickness is 30-50nm, is also covered with one layer of gold-tin alloy material in patterned electrodes, image polarizing electrode by gold-tin alloy with
Multiple top electrodes 3 are electrically connected.
Epitaxial structure 2 includes lower limit layer 21, lower waveguide layer 22, the active layer being set in turn in from below to up on substrate 1
23rd, upper ducting layer 24 and upper limiting layer 25, upper limiting layer 25 are ridge type semiconductor layer 20.Multiple ridge portion 20a are formed at
The top of limiting layer 25.Wherein, lower limit layer 21 is extended up for limiting light field towards the side of substrate 1, upper limiting layer 25
Extended up for limiting light field away from the side of substrate 1, lower waveguide layer 22 and upper ducting layer 24 are used to increase to carrier
Restriction effect, increase carrier is in the distribution of active area, raising light restriction factor, reduction threshold value, increase luminous efficiency, active layer
23 be Quantum Well, for providing the gain of light.
More ridge type semiconductor lasers further include hearth electrode 4, insulating layer 5 and multiple Ohm contact electrodes 6,4 shape of hearth electrode
Into in the bottom of substrate 1, multiple Ohm contact electrodes 6 be respectively formed between multiple ridge portion 20a and multiple top electrodes 3 and with
Multiple ridge portion 20a are corresponded, i.e., an Ohm contact electrode 6 are equipped between each top electrode 3 and ridge portion 20a, absolutely
Edge layer 5 is formed between the adjacent ridge portion 20a of multiple ridge portion 20a any twos and extends to multiple ridge portion 20a, is multiple
The side of Ohm contact electrode 6 and multiple top electrodes 3, i.e. upper limiting layer 25 remove the surface in the region outside ridge portion 20a with
And ridge portion 20a, Ohm contact electrode 6, the side of top electrode 3 are all covered with insulating layer 5.Top electrode 3 in the present embodiment
Thickness is equal with the thickness of hearth electrode 4 and is 0.1~5 μm.
The material of substrate 1 is n type gallium nitride, and the material of lower limit layer 21 is N-type aluminium gallium nitride alloy, the material of lower waveguide layer 22
For N-type InGaN, the material of upper ducting layer 24 is p-type InGaN, and the material of upper limiting layer 25 is p-type aluminium gallium nitride alloy/nitrogen
Change gallium superlattice structure, the material of insulating layer 5 is silica, and Ohm contact electrode 6 includes three electrode layers that lamination is set,
The material of three electrode layers is followed successively by palladium/platinum/gold, wherein, the thickness of three electrode layers is 30-50nm, and active layer 23 is more
Quantum well structure, it includes the gallium nitride barrier layer of alternating growth and InGaN potential well layer.Wherein, the number of Quantum Well is 1
~5.The material of substrate 1 in the present embodiment can also be sapphire or silicon.
As a specific example, the thickness of substrate 1 is 3 μm, and the thickness of lower limit layer 21 is 1250nm, lower waveguide layer
22 thickness is 150nm, and the thickness of upper ducting layer 24 is 90nm, and the thickness of upper limiting layer 25 is 500nm, the thickness of insulating layer 5
For 100nm, the thickness of Ohm contact electrode 6 is 150nm, and the thickness of active layer 23 is the thickness of 20nm, top electrode 3 and hearth electrode 4
Degree is 1 μm.
With reference to Fig. 2 a~2e, the present embodiment additionally provides a kind of production method of more ridge type semiconductor lasers, the system
Making method includes step：
S1, provide a substrate 1 and substrate 1 grown on top formed with epitaxial structure 2；
Specifically, step S1 includes being sequentially depositing lower limit layer 21, lower waveguide layer 22, active layer 23, upper ripple on substrate 1
Conducting shell 24, the upper limit saw lumber bed of material 100, as shown in Figure 2 a, wherein, depositing operation is Metal Organic Chemical Vapor Deposition
(MOCVD) technique or molecular beam epitaxy (MBE) technique.
S2, given birth on the upper limit saw lumber bed of material 100 in the grown on top electrode layer 102 of epitaxial structure 2 by evaporation process
Length forms electrode layer 102；
It is first in the upper limit saw lumber bed of material 100 in the grown on top ohmic contact layer 101 of epitaxial structure 2 before step S2
It is upper to grow to form ohmic contact layer 101 by evaporation process, shape is then grown by evaporation process on ohmic contact layer 101 again
Into electrode layer 102, as shown in Figure 2 b.
S3, using etching technics etch electrode layer 102 and epitaxial structure 2, and forming ridge at the top of epitaxial structure 2 partly leads
Body layer 20 and multiple top electrodes 3, ridge type semiconductor layer 20 include multiple ridge portion 20a, and multiple top electrodes 3 are formed at multiple ridges
Corresponded on portion 20a and with multiple ridge portion 20a.
In step s3, by wet-etching technology respectively to the upper limit saw lumber bed of material 100, the ohmic contact layer in step S2
101 and electrode layer 102 perform etching, form ridge type semiconductor layer 20, multiple Ohm contact electrodes 6 and multiple top electrodes 3, such as scheme
Shown in 2c.
In addition, the production method of the present embodiment further includes：
Depositing insulating layer 5 on S4, epitaxial structure 2 in step s3, so that insulating layer 5 is formed at multiple ridge portions
Between the adjacent ridge portion 20a of 20a any twos and extend to multiple ridge portion 20a, multiple Ohm contact electrodes 6 and multiple tops
The side of electrode 3, as shown in Figure 2 d；
S5, the bottom grown hearth electrode 4 in substrate 1.
In step s 5, first the bottom of substrate 1 is thinned before hearth electrode 4 is grown, then again after being thinned
Substrate 1 bottom evaporation hearth electrode 4, as shown in Figure 2 e.
It should be noted that in the present specification, term " comprising ", "comprising" or its any other variant are intended to
Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those
Element, but also including other elements that are not explicitly listed, or further include as this process, method, article or equipment
Intrinsic key element.
The above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
- A kind of 1. more ridge type semiconductor lasers, it is characterised in that including substrate, the epitaxial structure being formed on the substrate, The top of the epitaxial structure has ridge type semiconductor layer, and the ridge type semiconductor layer includes multiple ridge portions, more ridges Semiconductor laser further includes multiple top electrodes, the multiple top electrode be formed in the multiple ridge portion and with it is the multiple Ridge portion corresponds.
- 2. more ridge type semiconductor lasers according to claim 1, it is characterised in that the number in the multiple ridge portion is 2~10.
- 3. more ridge type semiconductor lasers according to claim 2, it is characterised in that the width in the multiple ridge portion is 2~45 μm.
- 4. more ridge type semiconductor lasers according to claim 3, it is characterised in that the width phase in the multiple ridge portion Deng the spacing in the multiple ridge portion between two ridge portions of arbitrary neighborhood is equal.
- 5. according to any more ridge type semiconductor lasers of Claims 1 to 4, it is characterised in that the epitaxial structure bag The lower limit layer being set in turn in from below to up on the substrate, lower waveguide layer, active layer, upper ducting layer and upper limiting layer are included, The upper limiting layer is the ridge type semiconductor layer.
- 6. more ridge type semiconductor lasers according to claim 5, it is characterised in that further include hearth electrode, insulating layer and Multiple Ohm contact electrodes, the hearth electrode are formed at the bottom of the substrate；The multiple Ohm contact electrode is formed respectively Corresponded between the multiple ridge portion and the multiple top electrode and with the multiple ridge portion, the insulating layer is formed Between the adjacent ridge portion of the multiple ridge portion any two and extend to the multiple ridge portion, multiple Ohmic contacts electricity Pole and the side of multiple top electrodes.
- 7. more ridge type semiconductor lasers according to claim 6, it is characterised in that the thickness of the multiple top electrode with The thickness of the hearth electrode is equal and is 0.1~5 μm.
- 8. more ridge type semiconductor lasers according to claim 6, it is characterised in that the material of the substrate is N-type nitrogen Change gallium, the material of the lower limit layer is N-type aluminium gallium nitride alloy, and the material of the lower waveguide layer is N-type InGaN, the upper ripple The material of conducting shell is p-type InGaN, and the material of the upper limiting layer is p-type aluminium gallium nitride alloy/gallium nitride superlattice structure, described The material of insulating layer is silica, and the Ohm contact electrode includes three electrode layers that lamination is set, three electrodes The material of layer is followed successively by palladium/platinum/gold, and the active layer is multi-quantum pit structure, it includes the gallium nitride barrier layer of alternating growth With InGaN potential well layer.
- 9. a kind of production method of more ridge type semiconductor lasers, it is characterised in that including step：There is provided a substrate and the substrate grown on top formed with epitaxial structure；In the grown on top electrode layer of the epitaxial structure；The electrode layer and the epitaxial structure are etched using etching technics, forming ridge at the top of the epitaxial structure partly leads Body layer and multiple top electrodes, the ridge type semiconductor layer include multiple ridge portions, and the multiple top electrode is formed at the multiple Corresponded in ridge portion and with the multiple ridge portion.
- 10. production method according to claim 9, it is characterised in that the step application etching technics etches the electricity Etching technics in pole layer and the epitaxial structure is dry method or wet-etching technology.
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| CN109494567A (en) * | 2018-12-07 | 2019-03-19 | 中国工程物理研究院电子工程研究所 | More ridge type semiconductor lasers and preparation method thereof of crosstalk between a kind of reduction ridge |
| CN110768106A (en) * | 2018-07-26 | 2020-02-07 | 山东华光光电子股份有限公司 | Laser diode preparation method |
| CN110808529A (en) * | 2018-08-06 | 2020-02-18 | 潍坊华光光电子有限公司 | Semiconductor laser with optimized heat conduction and preparation method thereof |
| CN112467518A (en) * | 2020-11-27 | 2021-03-09 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
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