CN105895754B - A kind of production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting - Google Patents
A kind of production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 38
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 238000000407 epitaxy Methods 0.000 claims abstract description 17
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 16
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000005864 Sulphur Substances 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 230000007017 scission Effects 0.000 claims abstract description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- -1 PH3 phosphines Chemical class 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 6
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- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
The invention discloses a kind of production methods of InGaAsP materials buried waveguide structure super-radiance light emitting diode chip, including：Using MOCVD epitaxy growing technology successively grown buffer layer, lower limit layer, multi-quantum well active region, upper limiting layer and p-type ohmic contact layer on the InP InP substrates for mix sulphur, an epitaxial wafer is constituted；Epitaxial wafer is performed etching to form ridge; high temperature is used in MOCVD reative cells and has pair epitaxial wafer under the conditions of big flow PH3 phosphine gas shields to be toasted for a long time, then is dropped under cryogenic conditions and continued to carry out burial growth to the side of ridge using MOCVD epitaxy growing technology；Continue to generate highly doped coating and contact layer using MOCVD epitaxy growing technology；It is fabricated to super-radiance light emitting diode chip by photoetching, etching, sputtering technology, alloy, scribing cleavage.The advantages of production method provided by the present invention, is：The boundary defect that Material growth goes out is few, reliable in quality, and manufactured device reliability is high, high power, wide spectrum and hot operation performance.
Description
Technical field
The present invention relates to field of photoelectric technology more particularly to a kind of InGaAsP materials buried waveguide structure superradiation light-emittings
The production method of two pole piece pieces.
Background technology
Super-radiance light emitting diode is a kind of spontaneous device that will radiate light amplification, and luminescence mechanism is a kind of strong excitation shape
The radiation phenomenon oriented under state, photoelectric characteristic have both the height output work(of laser between laser and light emitting diode
The advantages that rate and the wide spectrum characteristic of light emitting diode, at optical fibre gyro (FOG), optical coherence tomography (OCT) imaging technique with
And the fields such as fiber optic communication tool has a wide range of applications.
And in the design of the waveguiding structure of super radiation light emitting tube, generally use ridge waveguide (RWG) structure, its advantage is that work
Skill is simple, good reliability, but because RWG structures are weak index waveguides, and in active layer side to both without effective light field limit
System, larger far-field divergence angle makes fibre-optical coupled power loss larger on Material growth direction, and fiber power is relatively low.Simultaneously
Also it is not injected into the limitation of electric current, because leakage current is unable to control, in threshold current, far-field characteristic and reliability etc.
Aspect is all good without ridge buried waveguide structure.
However, using ridge buried structure, light field mould is limited in and is buried in luminous zone, can preferably be carried out to electric current
It is limited, is formed simultaneously the wave guiding effect of lateral index guide structure, manufactured chip has smaller threshold current, nearly circle
Hot spot, the pattern of stabilization and smaller thermal resistance, but use reactive ion etching technology and chemical corrosion method wet selective
Epitaxial wafer of corrosion technology pair performs etching to form ridge during, quaternary material active area can be carved, due to epitaxial material
The difference of horizontal and vertical corrosion rate, and quaternary material (InGaAsP) corrosion rate is faster with respect to binary material (InP)；Have
Source region is quaternary material area can form pit with the increase of corrosion depth on the side of along ridge, therefore the side of ridge is caused to go out
Existing injustice, is readily formed cavity, i.e. existing defects when burying growth to coning row, is brought to secondary epitaxy growth quality
It is difficult.
Therefore, it improves ridge and buries secondary epitaxy growth quality, it is the best of raising chip reliability to reduce various defects
Approach, therefore the quality of ridge burial growth is the most key.
Invention content
In order to solve the above technical problems, the main purpose of the present invention is to provide a kind of InGaAsP materials buried waveguide knots
The production method of two pole piece piece of structure superradiation light-emitting.This method can be applied to improve in optical communication, CATV systems, photoelectric technology
The growth technology method of buried structure light emitting devices chip reliability.
To achieve the above object, the present invention provides a kind of two pole piece of InGaAsP materials buried waveguide structure superradiation light-emitting
The production method of piece, which is characterized in that including：Step 1, using MOCVD epitaxy growing technology, in the InP indium phosphides lining for mixing sulphur
N-type InP buffer layers, lower waveguide layer, multiple quantum-well light-emitting area, upper ducting layer and the first p-type contact layer are grown on bottom successively, is constituted
Epitaxial wafer；Step 2 continues to use reactive ion etching technology and chemical corrosion method wet selective corrosion technology pair
One time epitaxial wafer performs etching, and etch depth is 1600~1800 nanometers, forms the shape of ridge；Step 3 in high temperature and has big
An epitaxial wafer is toasted for a long time under the conditions of flow PH3 phosphine gas shields, then drops under cryogenic conditions and passes through choosing
Selecting property growing technology is to grow I-InP clads, P-INP clads, N-INP clads, highly doped P- successively in ridge structure
P+InGaAs layers of INP layers and highly doped P-InGaAsP layers and heavy doping contact layer；Step 4 continues to give birth to using MOCVD epitaxy
Long technology generates highly doped coating and contact layer, completes the full structure fabrication of entire extension sheet material；And step 5, successively
P side electrode is formed using photoetching, etching, sputtering technology, then is ground and forms N faces electrode with sputtering technology, scribing cleavage after alloy,
And 1310nm super-radiance light emitting diode chips are formed to the light output end of chip plating anti-reflection film, wherein the substrate is to mix
The indium phosphorus InP substrate of S；The thickness of the buffer layer of the indium phosphorus InP is 800 nanometers；The lower waveguide layer is InGaAsP,
Thickness is 80 nanometers；The coating is p-type INP coatings, and thickness is 180 nanometers；The InGaAsP coatings are highly doped group
The p-type InGaAsP coatings of part gradual change, thickness are 180 nanometers；The contact layer is highly doped p-type InGaAs ohmic contact layers,
Thickness is 350 nanometers.
Further, in step 3, using MOCVD epitaxy growing technology, wherein coning row is buried in growth course,
The high-temperature baking is at a temperature of 720 degree~730 degree, its flow of the big flow PH3 phosphines gas shield is 300~350
Milliliter is per minute, and it is to grow I- successively in ridge structure to be down to low temperature again by selective growth technology after long-time is toasted
Layer of InP, P-INP layers, N-INP layers.
Further, in step 3, the long-time baking time is 15~25 minutes.
Further, in step 3, low-temperature epitaxy I-InP clads, P-INP clads, N-INP clads be
660~680 degree of progress, wherein the I-InP clads are intrinsic indium phosphide INP layers, thickness is 200 nanometers；The P-INP
Clad is INP layers of p type inp, and thickness is 500 nanometers；The N-INP clads are INP layers of N-shaped, and thickness is received for 750
Rice.
Compared with prior art, two pole piece of InGaAsP materials buried waveguide structure superradiation light-emitting provided by the present invention
The advantageous effect of the production method of piece is：Suitably and oversaturated gas shield by high-temperature heat treatment, while at increase
Manage the superposition of time so that more favorable mass transport effect occurs for semiconductor material surface, after optimizing using the present inventionization
Parameter can fill and lead up the pit that etching is formed so that when burying, spine side wall interface is relatively smooth, and defect is few.In addition, shining
The process for making of two pole piece pieces is reproducible and can guarantee and accurately controls, so as to lean on and stability is strong.
Description of the drawings
Fig. 1 is 1310nm InGaAsP materials epitaxial structure schematic diagram of super-radiance light emitting diode of the present invention.
Fig. 2 is that the routinely condition of the present invention buries growth structure schematic diagram.
Fig. 3 is the burial growth complete structure schematic diagram after the Optimizing Process Parameters of the present invention.
Element explanation：
Fig. 1：1. substrate, 2. buffer layers, 3.U- types layer, 4. multiple quantum wells, 41. Quantum Well, 42. quantum are built, 5.U types
Layer, 6.P type layers；
Fig. 2：7.I-InP clads, 8.P-INP clads, 9.N-INP clads；
Fig. 3：1. mix the INP substrates of S, 2.INP buffer layers, 3.InGaAsP lower limit layers, 4. multiple quantum well layers,
It is 5.InGaAsP upper limiting layers, 6.P types layer of InP, 7.I-InP clads, 8.P-INP clads, 9.N-INP clads, 10. high
Mix p-type InP coatings, 11. highly doped P-InGaAsP layers and heavily doped P-InGaAs ohmic contact layers, 12. light extraction ends, 13. backlights
End.
Realization, functional characteristics and the advantage of the present invention will be described further with reference to attached drawing in conjunction with the embodiments.
Specific implementation mode
Below in conjunction with Figure of description, preferred embodiment of the present invention will be described, it should be understood that described herein
Preferred embodiment only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention, and in the absence of conflict, this hair
The feature in embodiment and embodiment in bright can be combined with each other.
Fig. 1 is 1310nm InGaAsP materials epitaxial structure schematic diagram of super-radiance light emitting diode of the present invention.Such as
Shown in Fig. 1, the production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting according to the ... of the embodiment of the present invention
Include the following steps：
It is slow to grow N-type InP using MOCVD epitaxy growing technology successively on the InP InP substrates for mix sulphur for step 1
Layer, lower waveguide layer, multiple quantum-well light-emitting area, upper ducting layer and the first p-type contact layer are rushed, an epitaxial wafer is constituted.In a reality
It applies in example, step 1 specifically includes：Substrate 1 is toasted in MOCVD reaction chambers at 740 DEG C first, it is different to remove 1 bottom surface of lining
Object.Grow N-type INP buffer layers (buffer), lower waveguide layer, the multiple quantum well light emitting of 0.8um successively on substrate at 690 DEG C
Area, upper ducting layer and the first p-type contact layer constitute an epitaxial wafer.
Step 2 continues using reactive ion etching technology and chemical corrosion method wet selective corrosion technology to primary
Epitaxial wafer performs etching, and etch depth is 1600~1800 nanometers, forms the shape of ridge.
Step 3 in high temperature and carries out an epitaxial wafer under the conditions of have big flow PH3 phosphine gas shields prolonged
Baking, then drop under cryogenic conditions by selective growth technology ridge structure be successively growth I-InP clads, P-INP packets
Coating, N-INP clads, highly doped P-INP layers and highly doped P-InGaAsP layers and P+InGaAs layers of heavy doping contact layer.
Further, in one embodiment in the step of three, using MOCVD epitaxy growing technology, wherein to coning row
Bury growth course in, the high-temperature baking be at a temperature of 720 degree~730 degree, the big flow PH3 phosphines gas shield its
Flow is 300~350 milliliters per minute, and low temperature is down to again by selective growth technology in ridge structure after long-time is toasted
It is to grow I-InP layers, P-INP layers, N-INP layers successively.
Further, in one embodiment in the step of three, the long-time baking time is 15~25 minutes.
Further, in one embodiment in the step of three, low-temperature epitaxy I-InP clads, P-INP clads, N-
INP clads are carried out at 660~680 degree, wherein the I-InP clads are intrinsic indium phosphide INP layers, thickness is received for 200
Rice；The P-INP clads are INP layers of p type inp, and thickness is 500 nanometers；The N-INP clads are INP layers of N-shaped, thick
Degree is 750 nanometers.
It note that comparison diagram 2 and Fig. 3 can be clearly visible the effect for carrying out the Optimizing Process Parameters of the present invention, wherein Fig. 2 is
The present invention routinely condition bury growth structure schematic diagram, and Fig. 3 be the present invention Optimizing Process Parameters after burial growth
Complete structure schematic diagram.
As seen from Figure 2：Side wall state is looked by SEM (scanning electron microscope), routinely condition carries out burial life
Long (be placed on MOCVD reaction chambers after epitaxial wafer cleaning and rise to after set temperature and directly start to grow), the side of ridge
Boundary is still uneven, and especially in quaternary material region with the presence of pit, flat side wall is not filled out by INP clads completely
It is flat.Relatively, as shown in figure 3, after selecting a complete epitaxial wafer again after the making of progress ridge, nitrogen drying is cleaned up
Continue to be placed into MOCVD reative cells, before burying growth, in 720 degree~730 degree high temperature and there are big flow PH3 phosphines (300
~350 ml/mins) baking in 15~25 minutes is carried out to an epitaxial wafer under protective condition, then drop to low temperature (660~
680 degree) under the conditions of material by selective growth technology grow successively I-InP clads, P-INP clads, N-INP coat
Layer.Different by baking time carry out many experiments comparison, as shown in Fig. 2, Fig. 3 and the following table 1, after Optimizing Process Parameters,
Scanning electron microscope (SEM) checks side wall state, and spine side wall interface is relatively smooth, and defect is few.
Table 1 is at 735 DEG C and under big flow phosphine gas shield, the comparison of side wall state and baking time
Step 4, continue to use MOCVD epitaxy growing technology generate highly doped coating (for example, highly doped P-INP layers with
And highly doped P-InGaAsP layers) and contact layer (for example, P+InGaAs layers of heavy doping contact layer), to complete entire epitaxial wafer
The full structure fabrication of material.
Step 5 uses photoetching, etching, sputtering technology to form p side electrode, then is ground and forms the faces N with sputtering technology successively
Electrode, scribing cleavage after alloy, and 1310nm super-radiance light emitting diodes are formed to the light output end of chip plating anti-reflection film
Chip.
In the production method of above-mentioned two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting, the substrate
To mix the indium phosphorus InP substrate of S；The thickness of the buffer layer of the indium phosphorus InP is 800 nanometers；The lower waveguide layer is
InGaAsP, thickness are 80 nanometers；The coating is p-type INP coatings, and thickness is 180 nanometers；The InGaAsP coverings
Layer is the p-type InGaAsP coatings of highly doped component-gradient, and thickness is 180 nanometers；The contact layer is highly doped p-type InGaAs
Ohmic contact layer, thickness are 350 nanometers.
Advantageously, the making of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting provided by the present invention
The advantageous effect of method is：Suitably and oversaturated gas shield by high-temperature heat treatment, while increasing processing time
Superposition so that more favorable mass transport effect occurs for semiconductor material surface, uses the parameter after present inventionization optimization can be with
Fill and lead up the pit that etching is formed so that spine side wall interface is relatively smooth when burying, and defect is few.In addition, light-emitting diodes chip
Process for making it is reproducible and can guarantee and accurately control, so as to lean on and stability is strong.
It these are only the preferred embodiment of the present invention, be not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (2)
1. a kind of production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting, which is characterized in that packet
It includes：
Step 1, using MOCVD epitaxy growing technology, grown successively on the InP InP substrates for mix sulphur N-type InP buffer layers,
Lower waveguide layer, multiple quantum-well light-emitting area, upper ducting layer and the first p-type contact layer constitute an epitaxial wafer；
Step 2 continues to use extension of reactive ion etching technology and chemical corrosion method wet selective corrosion technology pair
Piece performs etching, and etch depth is 1600~1800 nanometers, forms the shape of ridge；
Step 3, in high temperature and a pair epitaxial wafer is toasted for a long time under the conditions of have big flow PH3 phosphine gas shields,
Drop to again under cryogenic conditions by selective growth technology ridge structure be successively growth I-InP clads, P-INP clads,
N-INP clads, highly doped P-INP layers and highly doped P-InGaAsP layers and P+InGaAs layers of heavy doping contact layer；
Step 4 continues to generate highly doped coating and contact layer using MOCVD epitaxy growing technology, completes entire extension sheet material
The full structure fabrication of material；And
Step 5 uses photoetching, etching, sputtering technology to form p side electrode successively, then is ground and forms the faces N electrode with sputtering technology,
Scribing cleavage after alloy, and 1310nm super-radiance light emitting diode chips are formed to the light output end of chip plating anti-reflection film,
The wherein described substrate is the indium phosphorus InP substrate for mixing S；The thickness of the buffer layer of the indium phosphorus InP is 800 nanometers；Institute
It is InGaAsP to state lower waveguide layer, and thickness is 80 nanometers；The coating is p-type INP coatings, and thickness is 180 nanometers；It is described
InGaAsP coatings are the p-type InGaAsP coatings of highly doped component-gradient, and thickness is 180 nanometers；The contact layer is highly doped
P-type InGaAs ohmic contact layers, thickness be 350 nanometers；
In step 3, using MOCVD epitaxy growing technology, wherein being buried in growth course to coning row, the high-temperature baking
It is at a temperature of 720 degree~730 degree, its flow of the big flow PH3 phosphines gas shield is 300~350 milliliters per minute, warp
Cross for a long time toast after be down to again low temperature by selective growth technology ridge structure be successively grow I-InP layers, P-INP layers,
N-INP layers；The long-time baking time is 15~25 minutes.
2. the production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting according to claim 1,
It is characterized in that, in step 3, low-temperature epitaxy I-InP clads, P-INP clads, N-INP clads are 660~680
Degree carries out, wherein the I-InP clads are intrinsic indium phosphide INP layers, thickness is 200 nanometers；The P-INP clads are P
INP layers of type indium phosphide, thickness are 500 nanometers；The N-INP clads are INP layers of N-shaped, and thickness is 750 nanometers.
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| CN111180313A (en) * | 2020-01-03 | 2020-05-19 | 中国科学院半导体研究所 | Low-dislocation in-situ etching MOCVD secondary epitaxial growth method |
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