CN208078380U - A kind of integrated DFB semiconductor laser chip of high speed - Google Patents
A kind of integrated DFB semiconductor laser chip of high speed Download PDFInfo
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- CN208078380U CN208078380U CN201820695673.7U CN201820695673U CN208078380U CN 208078380 U CN208078380 U CN 208078380U CN 201820695673 U CN201820695673 U CN 201820695673U CN 208078380 U CN208078380 U CN 208078380U
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Abstract
The utility model discloses a kind of integrated DFB semiconductor laser chip of high speed, and the high speed integrates DFB semiconductor laser chip and includes：Substrate layer, laser structure, dielectric layer, panel detector structure, bcb layer；The laser structure is grown in the both sides on the substrate layer respectively with the panel detector structure；The dielectric layer is grown between the laser structure and the panel detector structure, and the dielectric layer is located on the substrate layer, the bcb layer is filled in the surrounding of the panel detector structure, and on the substrate layer.The utility model realizes the single-chip integration of laser structure and panel detector structure, improves device packaging efficiency, reduces cost.
Description
Technical field
The utility model is related to field of laser device technology, and DFB semiconductor laser core is integrated more particularly to a kind of high speed
Piece.
Background technology
With the fast development of fiber optic communication, single mode and high speed directly modulated lasers become the mainstream in the following optical communication field
Optical device is the Primary Component over long distances with high-capacity optical fiber communication, is mainly used in data center, fiber entering household, mobile phone base
It stands, the fields such as wavelength-division multiplex.Usually in practical application, in order to detection laser real work performance, usually in laser
Backlight at increase receive detector chip, this encapsulating structure increases the packaging cost of device.
Utility model content
The purpose of this utility model is to provide a kind of integrated DFB semiconductor laser chip of high speed, realizes laser structure
With the single-chip integration of panel detector structure, improves device packaging efficiency, reduces cost.
To achieve the above object, the utility model provides a kind of integrated DFB semiconductor laser chip of high speed, feature
It is, the high speed integrates DFB semiconductor laser chip and includes：
Substrate layer, laser structure, dielectric layer, panel detector structure, bcb layer；
The laser structure is grown in the both sides on the substrate layer respectively with the panel detector structure；In the laser
The dielectric layer is grown between device structure and the panel detector structure, and the dielectric layer is located on the substrate layer, the BCB
Layer is filled in the surrounding of the panel detector structure, and on the substrate layer.
Optionally, the integrated DFB semiconductor laser chip of the high speed further includes：P-type metal and N-type metal, the N-type
Metal evaporation is vaporized on the laser respectively in the back side of the laser structure and the panel detector structure, the p-type metal
The upper surface of device structure and the panel detector structure forms Ohmic contact.
Optionally, the laser structure is grown successively by bottom to top includes：First buffer layer, lower waveguide layer, Multiple-quantum
Trap active layer, upper ducting layer, space layer, grating layer, grating coating, transition zone, the first electric contacting layer.
Optionally, the N-InP buffer layers that the first buffer layer is 1.4 μm；The lower waveguide layer is 100nm's
InAlGaAs lower waveguide layers；The multiple quantum well active layer grows the AlGaInAs strained multiple-quantum-wells that 5 pairs of periods are 16nm；Institute
State ducting layer on the InAlGaAs that ducting layer is 100nm；The space layer is the P-InP space layers of 110nm；The grating layer
For the InGaAsP grating layers of 35nm；The P-InP grating coatings that the grating coating is 1.8 μm；The transition zone is 50nm
P-InGaAsP transition zones；First electric contacting layer is 200nm doping concentrations 2 × 1019cm-3P-InGaAs electrical contact
Layer.
Optionally, the panel detector structure is grown successively by bottom to top includes：Second buffer layer, absorbs first structure layer
Layer, the second structure sheaf, the second electric contacting layer.
Optionally, the N-InP buffer layers that the second buffer layer is 1.2 μm；The first structure layer is the N- of 300nm
InP structure sheafs；The absorbed layer is the InGaAsP absorbed layers of 50nm；The P-InGaAsP that second structure sheaf is 200nm is tied
Structure layer；Second electric contacting layer is the P-InGaAs electric contacting layers of 200nm.
Optionally, the absorbed layer of the multiple quantum well active layer of the laser structure and the panel detector structure
Positioned at sustained height.
Optionally, the integrated DFB semiconductor laser chip of the high speed further includes：High transmittance film and high-reflecting film, it is described high saturating
Film is vaporized on the light output end of the laser structure；The high-reflecting film is vaporized on the backlight end face of the detector.
Optionally, the dielectric layer is SiO2The thickness of dielectric layer, the dielectric layer is 400nm.
Optionally, the laser structure is ridge waveguide structure.
According to specific embodiment provided by the utility model, the utility model discloses following technique effects：
The utility model discloses a kind of integrated DFB semiconductor laser chip of high speed, including：Substrate layer, laser structure,
Dielectric layer, panel detector structure, bcb layer；The laser structure is grown in the panel detector structure on the substrate layer respectively
Both sides；The dielectric layer is grown between the laser structure and the panel detector structure, and the dielectric layer is located at institute
It states on substrate layer, the bcb layer is filled in the surrounding of the panel detector structure, and on the substrate layer.The utility model
It realizes the single-chip integration of laser and detector, improves packaging efficiency, reduces packaging cost.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without having to pay creative labor, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is that the utility model embodiment high speed integrates DFB semiconductor laser chip epitaxial structure schematic diagram；
Fig. 2 is that the utility model embodiment high speed integrates DFB semiconductor laser chip vertical view.
Wherein, 1, substrate layer, 2, first buffer layer, 3, lower waveguide layer, 4, multiple quantum well active layer, 5, upper ducting layer, 6,
Space layer, 7, grating layer, 8, grating coating, 9, transition zone, the 10, first electric contacting layer, 11, second buffer layer, the 12, first knot
Structure layer, 13, absorbed layer, the 14, second structure sheaf, the 15, second electric contacting layer, 16, dielectric layer and bcb layer.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
The purpose of this utility model is to provide a kind of integrated DFB semiconductor laser chip of high speed, realizes laser structure
With the single-chip integration of panel detector structure, improves device packaging efficiency, reduces cost.
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with the accompanying drawings and have
Body embodiment is described in further detail the utility model.
Fig. 1 is that the utility model embodiment high speed integrates DFB semiconductor laser chip epitaxial structure schematic diagram；Fig. 2 is
The utility model embodiment high speed integrates DFB semiconductor laser chip vertical view, and as Figure 1-Figure 2, the utility model carries
DFB semiconductor laser chip is integrated for a kind of high speed, the high speed integrates DFB semiconductor laser chip and includes：
Substrate layer 1, laser structure, dielectric layer, panel detector structure, bcb layer；
The laser structure is grown in the both sides on the substrate layer 1 respectively with the panel detector structure；Swash described
The dielectric layer is grown between light device structure and the panel detector structure, and the dielectric layer is located on the substrate layer 1, it is described
Bcb layer is filled in the surrounding of the panel detector structure, and on the substrate layer 1.
High speed described in the utility model integrates DFB semiconductor laser chip：P-type metal and N-type metal, it is described
At the back side of the laser structure and the panel detector structure, the p-type metal is vaporized on described sharp respectively for N-type metal evaporation
The upper surface of light device structure and the panel detector structure forms Ohmic contact.
Laser structure described in the utility model is grown successively by bottom to top：It is first buffer layer 2, lower waveguide layer 3, more
Mqw active layer 4, upper ducting layer 5, space layer 6, grating layer 7, grating coating 8, transition zone 9, the first electric contacting layer 10.
Specifically：The N-InP buffer layers that the first buffer layer 2 is 1.4 μm；The lower waveguide layer 3 is 100nm's
InAlGaAs lower waveguide layers；The multiple quantum well active layer 4 grows the AlGaInAs strained multiple-quantum-wells that 5 pairs of periods are 16nm；
The upper ducting layer 5 is ducting layer on the InAlGaAs of 100nm；The space layer 6 is the P-InP space layers of 110nm；The light
Grid layer 7 is the InGaAsP grating layers of 35nm；The P-InP grating coatings that the grating coating 8 is 1.8 μm；The transition zone
9 be the P-InGaAsP transition zones of 50nm；First electric contacting layer 10 is 200nm doping concentrations 2 × 1019cm-3P-
InGaAs electric contacting layers.
The Bragg grating of period uniformity is arranged in the utility model on the grating layer 7.
The energy gap of upper ducting layer 5 described in the utility model is identical as the energy gap of the lower waveguide layer 3；On described
The variations in refractive index of ducting layer 5 is identical as the variations in refractive index of the lower waveguide layer 3.
Panel detector structure described in the utility model is grown successively by bottom to top：Second buffer layer 11, first structure layer
12, absorbed layer 13, the second structure sheaf 14, the second electric contacting layer 15.
Specifically：The N-InP buffer layers that the second buffer layer 11 is 1.2 μm；The first structure layer 12 is 300nm's
N-InP structure sheafs；The absorbed layer 13 is the InGaAsP absorbed layers of 50nm；Second structure sheaf 14 is the P- of 200nm
InGaAsP structure sheafs；Second electric contacting layer 15 is the P-InGaAs electric contacting layers of 200nm.
The multiple quantum well active layer 4 of laser structure described in the utility model and the suction of the panel detector structure
It receives layer 13 and is located at sustained height, improve the receiving efficiency of detector.
High speed described in the utility model integrates DFB semiconductor laser chip：High transmittance film and high-reflecting film, the height
Permeable membrane is vaporized on the light output end of the laser structure；The high-reflecting film is vaporized on the backlight end face of the detector.
The N-InP substrate layers that substrate layer 1 described in the utility model is two inches.
Laser structure described in the utility model is ridged waveguide structure.
Dielectric layer described in the utility model is SiO2Dielectric layer.
The preparation method that the utility model high speed integrates DFB semiconductor laser chip includes：
Step S1：Laser structure is grown in the side of 1 upper surface of substrate layer；
Step S2：SiO is grown in the side of 1 upper surface of substrate layer, the laser structure2Dielectric layer is lithographically formed spy
Device growth district is surveyed, epitaxial growth panel detector structure is carried out in the detector growth district；
Step S3：In the surrounding of the panel detector structure, the technique being combined using dry etching, wet etching, corrosion
It to substrate layer 1, and fills BCB glue and forms bcb layer, to realize that the electric isolution of the laser structure and the panel detector structure is made
With；
Step S4：The laser structure of ridge waveguide is prepared, vapor deposition p-type metal, is thinned, N-type metal, dissociation, light is deposited
Plated film is learned, high speed integrates the preparation of DFB semiconductor laser chip.
Each step is discussed in detail below：
Step S1：Laser structure is grown in the side of 1 upper surface of substrate layer；It specifically includes：
Step S11：Laser primary structure is grown in 1 upper surface of InP substrate layer；It specifically includes：
On 1 surface of substrate layer, grown successively by metal-organic ligand (MOCVD) first buffer layer 2, under
Ducting layer 3, multiple quantum well active layer 4, upper ducting layer 5, space layer 6, grating layer 7 obtain laser primary structure.
Specially：In N-InP substrate layer on pieces, 1.4 μm are grown successively by metal-organic ligand (MOCVD)
N-InP buffer layers, 100nm N-InAlGaAs lower waveguide layers including AlGaInAs that 5 pairs of periods are 16nm strain Multiple-quantum
The P-InGaAsP of ducting layer on the mqw active layer of trap, the P-InAlGaAs of 100nm, the P-InP space layers of 110nm, 35nm
Grating layer obtains laser primary structure.The energy gap of the upper ducting layer 5 and the energy gap phase of the lower waveguide layer 3
Together；The variations in refractive index of the upper ducting layer 5 in the utility model is identical as the variations in refractive index of the lower waveguide layer 3.
Step S12：On the grating layer 7 of the laser primary structure, manufacturing cycle uniformity is exposed using dual-beam
Bragg grating；It specifically includes：
The method and wet corrosion technique exposed in conjunction with double-beam holographic forms period uniformity Bragg grating.
Step S13：After manufacturing cycle uniformity Bragg grating, laser structure growth is completed；It specifically includes：
After having prepared grating, grating surface is handled, grows grating coating 8, mistake successively in MOCVD epitaxy stove
Layer 9 is crossed, one electric contacting layer 10 of last growth regulation completes laser structure growth.
Further specifically include：Using HBr：HNO3：H2O solution is stirred corrosion at a temperature of 0 DEG C, and to form the period uniform
Grating, removal have prepared the photoresist and dielectric layer 16 of sample surfaces after grating, and the clear of KOH and HF solution is carried out to sample surfaces
It washes, is then cleaned with isopropanol, deionized water is rinsed, and nitrogen drying is put into MOCVD epitaxy stove growth chamber, grows successively：
1.8 μm of P-InP grating coatings of growth, grow the P-InGaAsP transition zones of 50nm, finally grow 200nm doping concentrations 2 ×
1019The P-InGaAs electric contacting layers of cm-3 complete laser structure growth.
Step S2：SiO is grown in the side of 1 upper surface of substrate layer, the laser structure2Dielectric layer is lithographically formed spy
Device growth district is surveyed, epitaxial growth panel detector structure is carried out in the detector growth district；It specifically includes：
SiO is grown in the side of 1 upper surface of substrate layer, the laser structure2Dielectric layer is lithographically formed spy as mask
Device growth district, dry etching to substrate layer 1 are surveyed, and damaging layer is modified using wet etching, the baking raising surface in MOCVD
Growth quality grows second buffer layer 11, first structure layer 12, absorbed layer 13, the electrical contact of the second structure sheaf 14 and second successively
Layer 15；Adjust the thickness of the absorbed layer 13 of panel detector structure so that the thickness of the absorbed layer 13 of panel detector structure and laser knot
The thickness of the active area of structure is identical, improves the efficiency that detection receives light.
Further specifically include：
Using PECVD growth 250nm SiO2Dielectric layer is lithographically formed detector growth district, and lining is etched to using RIE
Bottom 1, then use H3PO4:HCl etchant solutions carry out wet etching, remove damaging layer, and organic and nothing is carried out before carrying out regrowth
Machine cleans, and is put into progress selection region regrowth in MOCVD.The baking of 650 DEG C of 20min is carried out before regrowth so that growth
The growing surface that mass transport effect forms relative smooth occurs for region, grows 1.2 μm of N-InP bufferings successively on the surface
Layer, the N-InP structure sheafs of 300nm, the eigen I nGaAsP absorbed layers of 50nm, the P-InGaAsP structure sheafs of 200nm, 200nm's
P-InGaAs electric contacting layers complete the growth of detector.
Step S3：In the surrounding of the panel detector structure, the technique being combined using dry etching, wet etching, corrosion
It to substrate layer 1, and fills BCB glue and forms bcb layer, to realize that the electric isolution of the laser structure and the panel detector structure is made
With；It specifically includes：
RIE dry etchings are carried out in the surrounding of the panel detector structure, substrate layer 1 are etched to, using H3PO4：HCl(3:1)
Corrosive liquid corrodes etching injury layer, corrodes 5s, and deionized water is rinsed, and fills BCB glue and form bcb layer, to realize
State the electric isolution effect of laser structure and the panel detector structure.
Step S4：The laser structure of ridge waveguide is prepared, vapor deposition p-type metal, is thinned, N-type metal, dissociation, light is deposited
Plated film is learned, high speed integrates the preparation of DFB semiconductor laser chip, specifically includes：
Photolithography method is used to prepare laser structure as ridge waveguide structure；Respectively to the ridge waveguide structure and described
The surface of panel detector structure carries out trepanning, and p-type metal is deposited, and forms Ohmic contact；Laser structure and panel detector structure is thinned
It is 110 μm to thickness, N-type metal then is deposited at the back side of laser structure and panel detector structure；It dissociates and to the laser
High transmittance film is deposited in the light output end of device structure, and high-reflecting film is deposited in the backlight end face of the panel detector structure, and light is received to improve
Efficiency, high speed integrate the preparation of DFB semiconductor laser chip.
Further specifically include：
Photolithography method is used to prepare laser structure as ridge waveguide structure, the top width control of ridge waveguide structure exists
3.6 μm, ridge waveguide bottom width is 1.5 μm, and ridge depth is 2.0 μm, forms ridge structure of falling from power, and carries out the BCB fillings of laser
And curing process；Then the trepanning for carrying out laser ridge waveguide and detector is put into the faces electron beam evaporation cavity evaporation P metal
Ti/Pt/Au(500/1000/)；It is 110 μm that laser structure, which is thinned, with panel detector structure to thickness in physical grinding,
The back side of laser structure and panel detector structure uses electron beam evaporation N face metal Ti/Pt/Au (500/2000/),
Alloy 55s at a temperature of 420 DEG C is dissociated into bar items, clamp bar plated film, using single layer SiO2High transmittance film of the material as light-emitting surface, instead
Rate control is penetrated≤3%；Using Si/Al2O3/Si/Al2O3High-reflecting film realizes that reflectivity 90%, high speed integrate dfb semiconductor and swash
The preparation of light device chip.
The width that the high speed prepared by the utility model integrates DFB semiconductor laser chip is 250 μm, laser section
It it is 250 μm along cavity length direction length, detector stage is 180 μm along cavity length direction length, and wherein detector stage includes all around
Each 20 μm of bcb layer.
Specific case used herein is expounded the principles of the present invention and embodiment, above example
Explanation be merely used to help understand the method and its core concept of the utility model；Meanwhile for the general technology of this field
Personnel, according to the thought of the utility model, there will be changes in the specific implementation manner and application range.In conclusion
The content of the present specification should not be construed as a limitation of the present invention.
Claims (10)
1. a kind of high speed integrates DFB semiconductor laser chip, which is characterized in that the high speed integrates DFB semiconductor laser
Chip includes：
Substrate layer, laser structure, dielectric layer, panel detector structure, bcb layer；
The laser structure is grown in the both sides on the substrate layer respectively with the panel detector structure；In the laser knot
The dielectric layer is grown between structure and the panel detector structure, and the dielectric layer is located on the substrate layer, the bcb layer is filled out
The surrounding in the panel detector structure is filled, and on the substrate layer.
2. high speed according to claim 1 integrates DFB semiconductor laser chip, which is characterized in that the high speed is integrated
DFB semiconductor laser chip further includes：P-type metal and N-type metal, the N-type metal evaporation the laser structure with
The back side of the panel detector structure, the p-type metal are vaporized on the upper of the laser structure and the panel detector structure respectively
Surface forms Ohmic contact.
3. high speed according to claim 1 integrates DFB semiconductor laser chip, which is characterized in that the laser knot
Structure is grown successively by bottom to top：First buffer layer, lower waveguide layer, multiple quantum well active layer, upper ducting layer, space layer, light
Grid layer, grating coating, transition zone, the first electric contacting layer.
4. high speed according to claim 3 integrates DFB semiconductor laser chip, which is characterized in that first buffering
The N-InP buffer layers that layer is 1.4 μm；The lower waveguide layer is the InAlGaAs lower waveguide layers of 100nm；The multiple quantum wells is active
Layer grows the AlGaInAs strained multiple-quantum-wells that 5 pairs of periods are 16nm；The upper ducting layer is waveguide on the InAlGaAs of 100nm
Layer；The space layer is the P-InP space layers of 110nm；The grating layer is the InGaAsP grating layers of 35nm；The grating covers
The P-InP grating coatings that cap rock is 1.8 μm；The transition zone is the P-InGaAsP transition zones of 50nm；First electrical contact
Layer is 200nm doping concentrations 2 × 1019cm-3P-InGaAs electric contacting layers.
5. high speed according to claim 4 integrates DFB semiconductor laser chip, which is characterized in that the detector knot
Structure is grown successively by bottom to top：Second buffer layer, first structure layer, absorbed layer, the second structure sheaf, the second electric contacting layer.
6. high speed according to claim 5 integrates DFB semiconductor laser chip, which is characterized in that second buffering
The N-InP buffer layers that layer is 1.2 μm；The first structure layer is the N-InP structure sheafs of 300nm；The absorbed layer is 50nm's
InGaAsP absorbed layers；Second structure sheaf is the P-InGaAsP structure sheafs of 200nm；Second electric contacting layer is 200nm
P-InGaAs electric contacting layers.
7. high speed according to claim 6 integrates DFB semiconductor laser chip, which is characterized in that the laser knot
The multiple quantum well active layer of structure is located at sustained height with the absorbed layer of the panel detector structure.
8. high speed according to claim 1 integrates DFB semiconductor laser chip, which is characterized in that the high speed is integrated
DFB semiconductor laser chip further includes：High transmittance film and high-reflecting film, the high transmittance film are vaporized on the light extraction of the laser structure
End face；The high-reflecting film is vaporized on the backlight end face of the detector.
9. high speed according to claim 1 integrates DFB semiconductor laser chip, which is characterized in that the dielectric layer is
SiO2The thickness of dielectric layer, the dielectric layer is 400nm.
10. high speed according to claim 1 integrates DFB semiconductor laser chip, which is characterized in that the laser knot
Structure is ridge waveguide structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400523A (en) * | 2018-05-10 | 2018-08-14 | 厦门市芯诺通讯科技有限公司 | A kind of high speed integrates DFB semiconductor laser chip and preparation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400523A (en) * | 2018-05-10 | 2018-08-14 | 厦门市芯诺通讯科技有限公司 | A kind of high speed integrates DFB semiconductor laser chip and preparation method |
| CN108400523B (en) * | 2018-05-10 | 2023-10-27 | 厦门市炬意科技有限公司 | High-speed integrated DFB semiconductor laser chip and preparation method thereof |
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