CN108493765A - A kind of preparation method of end face etching semiconductor laser - Google Patents
A kind of preparation method of end face etching semiconductor laser Download PDFInfo
- Publication number
- CN108493765A CN108493765A CN201810202995.8A CN201810202995A CN108493765A CN 108493765 A CN108493765 A CN 108493765A CN 201810202995 A CN201810202995 A CN 201810202995A CN 108493765 A CN108493765 A CN 108493765A
- Authority
- CN
- China
- Prior art keywords
- layers
- ingaasp
- inp
- semiconductor laser
- light output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of preparation methods of end face etching semiconductor laser; the epitaxial wafer used for optical communicating waveband InP-base semiconductor laser device epitaxial wafer, epitaxial slice structure be InP substrate, InP buffer layers, energy gap and gradually changed refractive index InGaAsP lower waveguide layers, InGaAsP multi-quantum well active regions, the upper ducting layers of InGaAsP, P InP and P InGaAsP transition zones, P InP space layers, P InGaAsP grating layers, P InP protective layers.Holographic grating preparation and regrowth are carried out to an epitaxial wafer, and carry out laser ridge preparation, inclined light output end is prepared using the method for dry etching combination wet etching.The present invention forms the light output end of laser using the method for dry etching combination wet etching；Since inclined light output end makes the gain that FP is fed back in Cavity surface reduce, to reduce the requirement to plating conditions, the yield rate of single mode light extraction is improved.
Description
Technical field
The present invention relates to semiconductor laser, especially a kind of preparation method of end face etching semiconductor laser.
Background technology
With the fast development of fiber optic communication, single mode and high speed directly modulated lasers become the mainstream in the following optical communication field
Optical device is the Primary Component over long distances with high-capacity optical fiber communication.It is widely used in short-range data center, cable television
Equal fields.
DFB（distributed feedbacklaser semiconductor laser）Laser, as distributed feed-back
Formula semiconductor laser carries out coupling and modeling to light by the grating that manufacturing cycle is distributed inside laser, realizes single
Mould exports.At work, there are the competitions of the FP patterns and DFB patterns of Cavity surface, in order to reduce FP patterns for usual Distributed Feedback Laser
Gain, improves the single mode yield of DFB, and the prior art usually requires that height usually in light output end using the method for vapor deposition high transmittance film
Permeable membrane realizes uniform antiradar reflectivity in wide temperature range, this is to the more demanding of plated film.
Invention content
In view of this, the purpose of the present invention is to propose to a kind of preparation methods of end face etching semiconductor laser, using quarter
The method of erosion and corrosion forms inclined laser light extraction Cavity surface, reduces the reflectivity of Cavity surface, to effectively inhibit FP patterns
Resonance, improve the yield rate of single longitudinal mode light extraction.
The present invention is realized using following scheme：A kind of preparation method of end face etching semiconductor laser, specifically include with
Lower step：
Step S1：Using optical communicating waveband InP-base semiconductor laser device epitaxial wafer as the end face etching semiconductor laser
Epitaxial wafer；The epitaxial wafer of the present invention uses rational waveguide and active area structure, improves gain, reduces loss；
Step S2：Holographic grating preparation and regrowth are carried out to an epitaxial wafer in step S1；
Step S3：The ridge waveguide of semiconductor laser is prepared using wet corrosion technique, then uses dry etching ridge wave
It leads to form light output end, then wet etching light output end is used to repair damaging layer, form inclined light output end；
Step S4：The follow-up making for carrying out semiconductor laser, obtains complete end face etching semiconductor laser.
Further, step S1 specifically includes following steps：
Step S11：On N-InP substrates, pass through MOCVD technology epitaxial growth N-InP buffer layers；
Step S12：The InGaAsP lower waveguide layers of energy gap and gradually changed refractive index are grown on the N-InP buffer layers；Wherein
The refractive index and energy gap of this layer change linearly, bigger close to the narrower refractive index of active area energy gap；
Step S13：InGaAsP multiple quantum well active layers are grown on the InGaAsP lower waveguide layers；Can be had using the material system
Effect improves the energy difference of quantum well conduction band and potential barrier, improves carrier limitation capability, and improve the injection efficiency under chip high temperature,
Improve its characteristic temperature；
Step S14：Ducting layer on InGaAsP is grown in the InGaAsP multiple quantum well active layers；This layer of energy gap and folding
It is similar with lower waveguide layer to penetrate rate variation；
Step S15：Grow low-doped the first P-InP transition zones and the first P- on ducting layer successively on the InGaAsP
InGaAsP transition zones；
Step S16：Low-doped P-InP space layers are grown on the first P-InGaAsP transition zones；
Step S17：P-InGaAsP grating layers are grown in the P-InP space layers；
Step S18：P-InP protective layers are grown on the P-InGaAsP grating layers, complete the growth of an epitaxial wafer.
Further, the step S2 specifically includes following steps：
Step S21：Surface InP protective layers and the spin coating of an epitaxial wafer are eroded using HCl；
Step S22：Photoetching prepares uniform grating using double-beam holographic method, and uses HBr：HNO3：H2O solution corrosion shapes
At period uniform grating；
Step S23：The obtained grating surfaces of step S22 are started the cleaning processing, and are put it into MOCVD epitaxy stove in grating
On two P-InP transition zones of growth regulation, the 2nd P-InGaAsP transition zones, P-InGaAs heavily doped layers successively, wherein the P-
For InGaAs heavily doped layers as electric contacting layer, doping concentration is 2 × 1019cm-3。
Further, the step S3 specifically includes following steps：
Step S31：SiO is prepared using sedimentation2Dielectric layer, and using the waveguide of photoetching technique formation ridge structure；
Step S32：By dry etch process, using CH4：H2The waveguide for the ridge structure that RIE etch steps S31 is obtained is formed
The light output end of etching；
Step S33：By wet etching, using Br2：H2O corrosive liquids carry out Corrosion Repair damaging layer, shape again to light output end
At the light output end with certain angle of inclination, the reflectivity of Cavity surface is effectively reduced.
Further, the step S4 is specially：Trepanning, the faces P metal coating, physics are carried out to ridge waveguide region successively
It grinds thinned, the faces N metal coating, alloy, dissociation, light extraction and backlight end face and optics membrane operations is deposited, complete the making of chip.It should
Step is the RWG laser process flows of routine.
Compared with prior art, the present invention has following advantageous effect：The present invention is using dry etching combination wet etching
Method forms the light output end of laser；Inhibit the feedback of Cavity surface pattern using inclined light output end, reduces laser
The resonance of multimode when work, since inclined light output end makes the gain that FP is fed back in Cavity surface reduce, to reduce to plating
The requirement of film condition improves the yield rate of single mode light extraction.
Description of the drawings
Fig. 1 is the epitaxial structure schematic diagram containing grating in the embodiment of the present invention.
Fig. 2 is the side view of semiconductor laser ridge in the embodiment of the present invention.
Fig. 3 is semiconductor laser exterior view in the embodiment of the present invention.
In figure, 1 is N-InP substrates, and 2 be N-InP buffer layers, and 3 be InGaAsP lower waveguide layers, and 4 is active for multiple quantum wells
Layer, 5 be ducting layer on InGaAsP, and 6 be the first P-InP transition zones, and 7 be the first P-InGaAsP transition zones, and 8 be the spaces P-InP
Layer, 9 be grating layer, and 10 be InP grating coatings, and 11 be the 2nd P-InP transition zones, and 12 be the 2nd P-InGaAsP transition zones, 13
It is inclined light output end for heavy doping P-InGaAs electric contacting layers, 14,15 be backlight end face, and 16 carve for laser light extraction ridge
Region is lost, 17 be laser p side electrode.
Specific implementation mode
The present invention will be further described with reference to the accompanying drawings and embodiments.
A kind of preparation method of end face etching semiconductor laser is present embodiments provided, following steps are specifically included：
Step S1：Using optical communicating waveband InP-base semiconductor laser device epitaxial wafer as the end face etching semiconductor laser
Epitaxial wafer；The epitaxial wafer of the present invention uses rational waveguide and active area structure, improves gain, reduces loss；
Step S2：Holographic grating preparation and regrowth are carried out to an epitaxial wafer in step S1；
Step S3：The ridge waveguide of semiconductor laser is prepared using wet corrosion technique, then uses dry etching ridge wave
It leads to form light output end, then wet etching light output end is used to repair damaging layer, form inclined light output end；
Step S4：The follow-up making for carrying out semiconductor laser, obtains complete end face etching semiconductor laser.
In the present embodiment, step S1 specifically includes following steps：
Step S11：On two inches of N-InP substrates, pass through MOCVD technologies（Metal-organic ligand）1 μ of epitaxial growth
The N-InP buffer layers of m；
Step S12：Waveguide under the InGaAsP of the 60nm of energy gap and gradually changed refractive index is grown on the N-InP buffer layers
Layer；The refractive index and energy gap of wherein this layer change linearly, bigger close to the narrower refractive index of active area energy gap；
Step S13：The InGaAsP multiple quantum well active layers that 5 pairs of periods are 15nm are grown on the InGaAsP lower waveguide layers；
Quantum well conduction band and the energy difference of potential barrier can be effectively improved using the material system, improve carrier limitation capability, and improve chip
Injection efficiency under high temperature improves its characteristic temperature；
Step S14：Ducting layer on the InGaAsP of 60nm is grown in the InGaAsP multiple quantum well active layers；This layer of forbidden band is wide
Degree and variations in refractive index are similar with lower waveguide layer；
Step S15：Grown successively on ducting layer on the InGaAsP the first P-InP transition zones of low-doped 80nm with
The first P-InGaAsP transition zones of 20nm can reduce loss of the doped layer to carrier and light field, improve gain；
Step S16：The P-InP space layers of low-doped 30nm are grown on the first P-InGaAsP transition zones；
Step S17：The P-InGaAsP grating layers of 30nm are grown in the P-InP space layers；
Step S18：The P-InP protective layers that 10nm is grown on the P-InGaAsP grating layers, complete the life of an epitaxial wafer
It is long.
Wherein, upper and lower ducting layer uses linear change in refractive index and energy gap, increases close to active area refractive index
Play the role of optical waveguide, energy gap becomes smaller the restriction effect played to carrier.
In the present embodiment, the step S2 specifically includes following steps：
Step S21：Surface InP protective layers and the spin coating of an epitaxial wafer are eroded using HCl；
Step S22：Photoetching prepares uniform grating using double-beam holographic method, and uses HBr：HNO3：H2O solution is in 0 DEG C of temperature
It is stirred corrosion under degree and forms period uniform grating；
Step S23：The photoresist and dielectric layer for the grating surface that removal step S22 is obtained, carry out KOH and HF solution cleaning at
Reason, is then cleaned with isopropanol, and deionized water is rinsed, nitrogen drying, and is put it into MOCVD epitaxy stove on grating successively
The P- of the grating coating and the 2nd P-InP transition zones, the 2nd P-InGaAsP transition zones of 50nm, 200nm of 1.5 μm of growth
InGaAs heavily doped layers, wherein the P-InGaAs heavily doped layers, as electric contacting layer, doping concentration is 2 × 1019cm-3。
In the present embodiment, the step S3 specifically includes following steps：
Step S31：Using the SiO of PECVD deposition methods 200nm2Dielectric layer, photoetching, and use H2SO4:H2O2:H2O corrodes
Fall the InGaAs layers of sample surfaces, then H3PO4:HCl corrodes corrosion to P-InP grating coatings, forms ridge waveguide；It goes
Except surface SiO2Dielectric layer deposits 350nmSiO again using PECVD2Passivation layer, photoetching form 20 μm of trepanning end face etching
Region；The wide 2.0um of ridge on ridge waveguide, lower wide 1.8um of ridge or so, in 15um or so, ridge exists the both sides groove width of ridge waveguide deeply
1.7 μm or so specific chip structures are as shown in Figure 2；
Step S32：By dry etch process, using CH4：H2The waveguide for the ridge structure that RIE etch steps S31 is obtained etches
To substrate layer, etching depth forms the light output end of etching at 3 μm；
Step S33：By wet etching, using Br2：H2O corrosive liquids are at room temperature stirred light output end corrosion again
Damaging layer is repaired, the light output end with certain angle of inclination is formed, etching time is 30s or so, effectively reduces Cavity surface
Reflectivity.
In the present embodiment, the step S4 is specially：Successively to ridge waveguide region carry out trepanning, the faces P metal coating,
Physical grinding is thinned, optics membrane operations are deposited in the faces N metal coating, alloy, dissociation, light extraction and backlight end face, completes the system of chip
Make.More specifically：Remove surface SiO2Dielectric layer regrows the SiO of 400nm2Passivation layer then uses routine RWG lasers
Subsequent technique is carried out, successively the photoetching in the areas progress Xie Ge, dielectric layer trepanning on ridge waveguide；Ridge upper surface is handled,
It is put into electron beam evaporation cavity evaporation P face metal Ti/Pt/Au（500/1000/3000Å）；N-type layer is thinned to thickness in physical grinding
In 110um or so, bottom sheet carries out back side process, the faces electron beam evaporation N metal Ti/Pt/Au（500/2000/3000Å）, 420
Alloy 55s at a temperature of DEG C is dissociated into bar items, clamp bar plated film, using Al2O3As light extraction surface protective film, using Si/Al2O3/
Si/Al2O3High transmittance film realizes reflectivity 90% or so, completes chip and prepares.
Specific epitaxial structure schematic diagram as shown in Figure 1, chip ridge structure as shown in Fig. 2, chip exterior view such as Fig. 3 institutes
Show.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification should all belong to the covering scope of the present invention.
Claims (5)
1. a kind of preparation method of end face etching semiconductor laser, it is characterised in that include the following steps：
Step S1：Using optical communicating waveband InP-base semiconductor laser device epitaxial wafer as the end face etching semiconductor laser
Epitaxial wafer；
Step S2：Holographic grating preparation and regrowth are carried out to an epitaxial wafer in step S1；
Step S3：The ridge waveguide of semiconductor laser is prepared using wet corrosion technique, then uses dry etching ridge wave
It leads to form light output end, then wet etching light output end is used to repair damaging layer, form inclined light output end；
Step S4：The follow-up making for carrying out semiconductor laser, obtains complete end face etching semiconductor laser.
2. a kind of preparation method of end face etching semiconductor laser according to claim 1, it is characterised in that：Step S1
Specifically include following steps：
Step S11：On N-InP substrates, pass through MOCVD technology epitaxial growth N-InP buffer layers；
Step S12：The InGaAsP lower waveguide layers of energy gap and gradually changed refractive index are grown on the N-InP buffer layers；
Step S13：InGaAsP multiple quantum well active layers are grown on the InGaAsP lower waveguide layers；
Step S14：Ducting layer on InGaAsP is grown in the InGaAsP multiple quantum well active layers；
Step S15：Grow low-doped the first P-InP transition zones and the first P- on ducting layer successively on the InGaAsP
InGaAsP transition zones；
Step S16：Low-doped P-InP space layers are grown on the first P-InGaAsP transition zones；
Step S17：P-InGaAsP grating layers are grown in the P-InP space layers；
Step S18：P-InP protective layers are grown on the P-InGaAsP grating layers, complete the growth of an epitaxial wafer.
3. a kind of preparation method of end face etching semiconductor laser according to claim 1, it is characterised in that：The step
Rapid S2 specifically includes following steps：
Step S21：Surface InP protective layers and the spin coating of an epitaxial wafer are eroded using HCl；
Step S22：Photoetching prepares uniform grating using double-beam holographic method, and uses HBr：HNO3：H2O solution corrosions are formed
Period uniform grating；
Step S23：The obtained grating surfaces of step S22 are started the cleaning processing, and are put it into MOCVD epitaxy stove in grating
On two P-InP transition zones of growth regulation, the 2nd P-InGaAsP transition zones, P-InGaAs heavily doped layers successively, wherein the P-
InGaAs heavily doped layers are as electric contacting layer.
4. a kind of preparation method of end face etching semiconductor laser according to claim 1, it is characterised in that：The step
Rapid S3 specifically includes following steps：
Step S31：SiO is prepared using sedimentation2Dielectric layer, and using the waveguide of photoetching technique formation ridge structure；
Step S32：By dry etch process, using CH4：H2The waveguide for the ridge structure that RIE etch steps S31 is obtained is formed
The light output end of etching；
Step S33：By wet etching, using Br2：H2O corrosive liquids carry out Corrosion Repair damaging layer, shape again to light output end
At the light output end with certain angle of inclination.
5. a kind of preparation method of end face etching semiconductor laser according to claim 1, it is characterised in that：The step
Suddenly S4 is specially：The progress trepanning of ridge waveguide region, the faces P metal coating, physical grinding are thinned successively, the faces N metal coating, closed
Optics membrane operations are deposited in gold, dissociation, light extraction and backlight end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810202995.8A CN108493765A (en) | 2018-03-13 | 2018-03-13 | A kind of preparation method of end face etching semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810202995.8A CN108493765A (en) | 2018-03-13 | 2018-03-13 | A kind of preparation method of end face etching semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108493765A true CN108493765A (en) | 2018-09-04 |
Family
ID=63338558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810202995.8A Pending CN108493765A (en) | 2018-03-13 | 2018-03-13 | A kind of preparation method of end face etching semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108493765A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167253A (en) * | 2018-10-10 | 2019-01-08 | 湖北光安伦科技有限公司 | A kind of production method of small divergence angle buried heterostructure Distributed Feedback Laser |
| CN111541149A (en) * | 2020-05-15 | 2020-08-14 | 陕西源杰半导体技术有限公司 | 10G anti-reflection laser and preparation process thereof |
| CN113675723A (en) * | 2021-08-23 | 2021-11-19 | 中国科学院半导体研究所 | Microcavity quantum cascade laser for continuous lasing and preparation method thereof |
| CN113991428A (en) * | 2021-10-27 | 2022-01-28 | 苏州长光华芯光电技术股份有限公司 | Method for manufacturing semiconductor laser |
| CN114640022A (en) * | 2020-12-16 | 2022-06-17 | 上海禾赛科技有限公司 | Resonant cavity, laser and laser radar |
| CN115418615A (en) * | 2022-01-23 | 2022-12-02 | 上海三菲半导体有限公司 | End face preparation and film coating method of semiconductor laser device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257417A (en) * | 2000-03-09 | 2001-09-21 | Shimadzu Corp | Semiconductor laser element |
| CN106711761A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院福建物质结构研究所 | Preparation method of DFB (Distributed Feedback) semiconductor laser device and laser device prepared by preparation method |
-
2018
- 2018-03-13 CN CN201810202995.8A patent/CN108493765A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257417A (en) * | 2000-03-09 | 2001-09-21 | Shimadzu Corp | Semiconductor laser element |
| CN106711761A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院福建物质结构研究所 | Preparation method of DFB (Distributed Feedback) semiconductor laser device and laser device prepared by preparation method |
Non-Patent Citations (2)
| Title |
|---|
| M.KITAMURA等: "《高性能单纵模工作的InGaAsP/InP DFB-DC-PBH激光器》", 《半导体光电》 * |
| 颜学进等: "《刻蚀腔InGaAsP/InP双异质结激光器的制作与特性》", 《半导体学报》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167253A (en) * | 2018-10-10 | 2019-01-08 | 湖北光安伦科技有限公司 | A kind of production method of small divergence angle buried heterostructure Distributed Feedback Laser |
| CN111541149A (en) * | 2020-05-15 | 2020-08-14 | 陕西源杰半导体技术有限公司 | 10G anti-reflection laser and preparation process thereof |
| CN114640022A (en) * | 2020-12-16 | 2022-06-17 | 上海禾赛科技有限公司 | Resonant cavity, laser and laser radar |
| CN113675723A (en) * | 2021-08-23 | 2021-11-19 | 中国科学院半导体研究所 | Microcavity quantum cascade laser for continuous lasing and preparation method thereof |
| CN113675723B (en) * | 2021-08-23 | 2023-07-28 | 中国科学院半导体研究所 | Continuous-lasing microcavity quantum cascade laser and preparation method thereof |
| CN113991428A (en) * | 2021-10-27 | 2022-01-28 | 苏州长光华芯光电技术股份有限公司 | Method for manufacturing semiconductor laser |
| CN113991428B (en) * | 2021-10-27 | 2023-06-13 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of semiconductor laser |
| CN115418615A (en) * | 2022-01-23 | 2022-12-02 | 上海三菲半导体有限公司 | End face preparation and film coating method of semiconductor laser device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108493765A (en) | A kind of preparation method of end face etching semiconductor laser | |
| CN100546135C (en) | The manufacture method of semiconductor laser with tunable and semiconductor laser with tunable | |
| JP2547001B2 (en) | Method of manufacturing semiconductor structure | |
| JP5280614B2 (en) | Embedded heterostructure devices incorporating waveguide gratings fabricated by single step MOCVD | |
| CN106711761B (en) | DFB semiconductor laser preparation method and laser prepared by same | |
| CN108418094B (en) | Preparation method of high-speed DFB semiconductor laser | |
| CN106785904A (en) | A kind of DFB semiconductor laser preparation method and laser | |
| CN100495839C (en) | Structure of long wavelength vertical cavity surface emitting laser and manufacturing method | |
| CN107248697A (en) | A kind of preparation method of long wavelength's InP-base DFB semiconductor laser tube core | |
| JPS61179588A (en) | Semiconductor element and manufacture thereof | |
| CN105914580B (en) | Semiconductor laser with lateral grating and longitudinal bragg reflection mirror structure | |
| JPH10242589A (en) | Manufacture of semiconductor device | |
| CN111181005A (en) | Buried structure high-linearity DFB laser chip for optical communication and preparation method thereof | |
| CN110752508B (en) | Preparation method of DFB semiconductor laser working at wide temperature | |
| CN102545047B (en) | Multiple-quantum well waveguide butt-coupling method | |
| US7981707B2 (en) | Method for enhancing optical characteristics of multilayer optoelectronic components | |
| CN107046227A (en) | A kind of BCB buries the preparation method of high speed DFB semiconductor laser | |
| CN110098562A (en) | A kind of Results for High Speed Buried DFB semiconductor laser and preparation method thereof | |
| CN211670427U (en) | Buried structure high-linearity DFB laser chip for optical communication | |
| CN108400523A (en) | A kind of high speed integrates DFB semiconductor laser chip and preparation method | |
| CN2689539Y (en) | Ridged waveguiding polarized non-related semiconductor optical amplifiers | |
| US7184640B2 (en) | Buried heterostructure device fabricated by single step MOCVD | |
| CN208078380U (en) | A kind of integrated DFB semiconductor laser chip of high speed | |
| CN208078379U (en) | A kind of high speed DFB semiconductor laser | |
| CN209730440U (en) | A kind of multi-wavelength laser array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180904 |