CN103259190A - Annular semiconductor laser of vertical coupling structure and preparing method thereof - Google Patents
Annular semiconductor laser of vertical coupling structure and preparing method thereof Download PDFInfo
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Abstract
The invention discloses an annular semiconductor laser of a vertical coupling structure and a preparing method thereof. An annular active resonator cavity is any one closed loop composed of ridge type waveguide and strip type waveguide, a P type electrode and an N type electrode are arranged on the annular active resonator cavity, laser light in the annular active resonator cavity is coupled to strip type straight waveguide through a vertical coupler, and the strip type straight waveguide outputs the laser light. An N type lower wrapping layer, a first gradual-change refractive index limiting layer, a first barrier layer, a multiple quantum well active layer, a second barrier layer, a second gradual-change refractive index limiting layer, a P type upper wrapping layer and a P type contacting layer which have preset thicknesses and concentration are successively formed by means of a metal organism chemical vapor deposition or molecular beam epitaxy method. A plurality of epitaxial layers are etched by using a SiO2 image as a mask, the etching depth is less than or equal to a first height and greater than or equal to a second height, and the annular active resonator cavity is transferred to a chip. The obtained annular semiconductor laser has the advantages of being simple in process, low in cost, stable in performance of parts, high in reliability and the like.
Description
Technical field
The present invention relates to field of semiconductor lasers, particularly semiconductor ring laser device of a kind of perpendicular coupling structure and preparation method thereof.
Background technology
The semiconductor ring laser device utilizes the closed waveguide loop as resonant cavity, do not need cleavage surface or grating that the light feedback is provided, can with any deflection in crystal orientation, compact conformation, technology is simple, reliability is high, compatible fully with existing microelectronic technique, can realize that high density is integrated.It not only can realize functions such as tunable optical source, optical switch, wavelength conversion, and can make up Primary Component and assembly in the optical-fiber networks such as all-optical logic and light random asccess memory, solved the compatibility issue of device architecture and preparation technology in the monolithic optoelectronic integrated circuit.Therefore, can be widely used in a series of optical devices such as tunable integrated optical source, light random asccess memory, all-optical logic, optical switch and wavelength conversion and the assembly.
The ring resonator of the semiconductor ring laser device of side-coupled structure and output slab waveguide are in same plane, and both material structures are identical, and therefore, slab waveguide produces very high loss during light output.In addition, in order to realize the effective coupling between slab waveguide and ring resonator, the coupling spacing of the two minimum (0.1～0.3 μ m), thereby must use semiconductor manufacturing equipments such as electron beam exposure, inductively coupled plasma (ICP) etching, this not only makes device preparation cost costliness, and craft precision also is difficult to control.In contrast to this, the ring resonator of the semiconductor ring laser device of perpendicular coupling structure and output slab waveguide are in Different Plane, can independent optimization design, thereby can improve device performance, reduce technology difficulty.
Existing perpendicular coupling structure adopts the material structure of molecular beam epitaxy (MBE) or metallo-organic compound chemical vapor deposition (MOCVD) diauxic growth technology difference growth ring shape resonant cavity and slab waveguide, the diauxic growth technology of this band figure has increased difficulty and complexity that technology prepares.In addition, the vertical coupled ring laser that adopts bonding technology to realize micro-ring resonant cavity and slab waveguide is also arranged, but the reliability and stability of device are relatively poor relatively.
Summary of the invention
The invention provides semiconductor ring laser device of a kind of perpendicular coupling structure and preparation method thereof, the present invention has reduced difficulty and the complexity of technology preparation, has improved the reliability and stability of device, sees for details hereinafter and describes:
A kind of semiconductor ring laser device of perpendicular coupling structure, described semiconductor ring laser device comprises: by the active ring resonator that semi-conducting material is made, described active ring resonator is: any closed circuit that ridge waveguide or slab waveguide constitute,
Be manufactured with P type electrode and N-type electrode on the described active ring resonator, be used for realizing the lase of semi-conducting material, the sharp light of penetrating in the described active ring resonator is coupled into the bar shaped straight wave guide by vertical coupler, the described sharp light of penetrating of described bar shaped straight wave guide output.
Described active ring resonator adopts the Ⅲ-ⅤZu Huahewubandaoti material system;
The composite system that described vertical coupler adopts polymer and Ⅲ-ⅤZu Huahewubandaoti to form.
Described vertical coupler is specially: power coupling efficiency is the vertical coupler of 1-5%.
Described bar shaped straight wave guide and output end face normal are 5～15 ° of deflections.
A kind of preparation method of semiconductor ring laser device of perpendicular coupling structure said method comprising the steps of:
1) on the N-type substrate in 100 crystal orientation, with metal organic chemical vapor deposition or molecular beam epitaxial method grow successively N-type under-clad layer, the first graded index limiting layer, first barrier layer, multiple quantum well active layer, second barrier layer, the second graded index limiting layer, P type top covering and the P type contact layer of preset thickness and concentration;
2) after the epitaxial material growth is finished, obtain preparing the required epitaxial wafer of described active ring resonator, wafer is used acetone, ethanol and washed with de-ionized water successively, dry up with high pure nitrogen;
3) at wafer surface deposit one deck SiO
2Film utilizes the photomask of described active ring resonator to carry out photoetching, and prepares SiO at wafer
2Figure;
4) use described SiO
2Figure is made the some epitaxial loayers of mask etching, etching depth smaller or equal to first the height, and more than or equal to second the height, described active ring resonator is transferred on the wafer;
Wherein, described first highly is: P type contact layer upper surface is to the distance of N-type under-clad layer upper surface; Described second highly is: the distance of P type contact layer upper surface to the second barrier layer upper surface;
5) adopt the buffered hydrofluoric acid solution corrosion to remove described SiO
2Figure;
6) at the upper surface spin on polymers medium of wafer, spin coating thickness is higher than described etching depth, and is heating and curing, and the described polymeric media of etching is finished the wafer surface planarization to the surface of described active ring resonator afterwards;
7) at front wafer surface spin coating photoresist, P type electrode pattern window is prepared in photoetching, and then splash-proofing sputtering metal Ti and Au adopt stripping technology to prepare P type electrode;
8) spin on polymers on described active micro-ring resonant cavity is prepared the polymer bar shaped straight wave guide of single mode transport by lithography step;
9) wafer is carried out reduction processing, utilize magnetron sputtering or electron beam evaporation technique at chip back surface evaporation AuGeNi and Au, form the N-type electrode;
10) wafer is cleaved into narrow strip along scribe line, and sticks on the base with the silver slurry, the bonding that goes between is encapsulated in the shell at last, finishes the preparation of polymer and Ⅲ-ⅤZu Huahewubandaoti ring laser.
When preparation InP base semiconductor ring laser, the operating process of step 1) is specially:
On the N-type InP in 100 crystal orientation substrate, with metal organic chemical vapor deposition or molecular beam epitaxial method growth N-type InP under-clad layer;
According to preset thickness and concentration grow the successively first graded index limiting layer, first barrier layer, AlGaInAs multiple quantum well active layer, second barrier layer and the second graded index limiting layer of AlGaInAs quaternary material;
Growing P-type InP top covering, the InGaAs contact layer of growing at last.
When preparation GaAs base semiconductor ring laser, the operating process of step 1) is specially:
On the N-type GaAs in 100 crystal orientation substrate with metal organic chemical vapor deposition or molecular beam epitaxial method growth N-type AlGaAs under-clad layer;
The first graded index limiting layer of the AlGaAs ternary system of growing successively material, first barrier layer, AlGaAs multiple quantum well active layer, second barrier layer and the second graded index limiting layer;
Growing P-type AlGaAs top covering, the GaAs contact layer of growing at last.
The beneficial effect of technical scheme provided by the invention is:
1) ring laser that adopts the technical program to realize does not need cleaved facets or grating that the light feedback is provided, and is simple in structure, compact, easily integrated with other device monolithics, abundanter device or the assembly of realization function.
2) at the low-loss polymer optical wave guide of the active ring resonator preparation of Ⅲ-ⅤZu Huahewubandaoti, the characteristics of luminescence that Ⅲ-ⅤZu Huahewubandaoti is superior is in the same place with polymer waveguide easy-formation, the little advantages of loss, can realize high-performance, low-loss ring laser.
3) ring laser that adopts perpendicular coupling structure to realize belongs to three-dimensional (3D) integrated device, can reduce lateral device dimensions effectively, is conducive to realize that the high density of device is integrated.
4) ring laser that adopts the technical program to realize has that technology is simple, cost is low, device performance stable and the reliability advantages of higher.
Description of drawings
Fig. 1: the planar structure schematic diagram of semiconductor ring laser device of the present invention;
Fig. 2: the vertical stratification schematic diagram of the active ring resonator of the present invention;
Fig. 3: the three-dimensional structure schematic diagram of semiconductor ring laser device of the present invention.
In the accompanying drawing, each parts is listed to be listed as follows:
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Referring to Fig. 1, a kind of semiconductor ring laser device of perpendicular coupling structure, comprise: the active ring resonator of being made by semi-conducting material 1, be manufactured with P type electrode 4 and N-type electrode 5 on the active ring resonator 1, be used for realizing the lase of semi-conducting material, the sharp light of penetrating in the active ring resonator 1 is coupled into bar shaped straight wave guide 3 by vertical coupler 2, and 3 outputs of bar shaped straight wave guide swash penetrates light.
During specific implementation, active ring resonator 1 is: any closed circuit that ridge waveguide or slab waveguide constitute, the effective refractive index of active ring resonator 1 and physical length have determined the output wavelength of semiconductor ring laser device.
Wherein, active ring resonator 1 adopts the Ⅲ-ⅤZu Huahewubandaoti material system, the 3 employing low-losses of bar shaped straight wave guide, the polymeric material that refractive index is adjustable, the composite system that vertical coupler 2 adopts polymer and Ⅲ-ⅤZu Huahewubandaoti to form.
In order to reduce the output loss of active ring resonator 1, preferred power coupling efficiency is the vertical coupler 2 of 1-5%.
In order to reduce the light reflection of output end face, to avoid forming effective optical resonance in the bar shaped straight wave guide 3, bar shaped straight wave guide 3 is 5～15 ° of deflections with the output end face normal.
Referring to Fig. 2 and Fig. 3, the preparation process of InP base semiconductor ring laser is as follows:
1, on the N-type InP substrate 6 in (100) crystal orientation, with metal organic chemical vapor deposition or molecular beam epitaxial method growth thickness 1000～2000nm, doping content 1 * 10
18Cm
-3N-type InP under-clad layer 7; This InP under-clad layer 7 is the epitaxially grown resilient coating of double as simultaneously, to be reduced in the defect concentration of epitaxial growth thin layer on this.
2, grow the successively first graded index limiting layer 8, first barrier layer 9, AlGaInAs multiple quantum well active layer 10, second barrier layer 11 and the second graded index limiting layer 12 of AlGaInAs quaternary material;
Wherein, the thickness 50nm of the first graded index limiting layer 8, doping content 1 * 10
18Cm
-3Thickness 5 * the 10nm of first barrier layer 9; Thickness 5 * the 6nm of AlGaInAs multiple quantum well active layer 10; The thickness 10nm of second barrier layer 11; The thickness 50nm of the second graded index limiting layer 12, doping content 1 * 10
18Cm
-3
Wherein, first barrier layer 9, AlGaInAs multiple quantum well active layer 10 and second barrier layer 11 do not carry out any doping.
3, growth thickness 1000～2000nm, doping content 1 * 10
18Cm
-3P type InP top covering 13, last growth thickness 100～200nm, doping content〉1 * 10
19Cm
-3The InGaAs contact layer, to reduce the contact resistance of P type electrode.
4, after epitaxial material growth is finished, obtain preparing the required epitaxial wafer of active ring resonator 1, wafer is used acetone, ethanol and washed with de-ionized water successively, dry up with high pure nitrogen;
5, utilize plasma enhanced chemical gaseous phase deposition long-pending (PECVD) at wafer surface deposit one deck compact structure, the thickness SiO at 500～1500nm
2Film utilizes the photomask of active ring resonator to carry out photoetching, and prepares SiO with reactive ion etching (RIE) method at wafer
2Figure.
6, use SiO
2Figure is made mask, and with inductance coupled reaction ion etching (ICP-RIE) technology etching some epitaxial loayers, etching depth is smaller or equal to first height, and more than or equal to second height, active ring resonator 1 transferred on the wafer;
During specific implementation, N-type under-clad layer 7, the first graded index limiting layer 8, first barrier layer 9, AlGaInAs multiple quantum well active layer 10, second barrier layer 11, the second graded index limiting layer 12, P type top covering 13 and P type contact layer 14 are respectively as epitaxial loayer, determine the scope of etching epitaxial loayer by first and second etching depths, the concrete value of etching depth determines that according to needs in the practical application embodiment of the invention is not restricted this.
Wherein, first highly is: P type contact layer 14 upper surfaces are to the distance of N-type under-clad layer 7 upper surfaces; Second highly is: the distance of P type contact layer 14 upper surface to the second barrier layers 11 upper surfaces, for example: first when highly being 3500nm, and P type contact layer 14, P type top covering 13, the second graded index limiting layer 12, second barrier layer 11, AlGaInAs multiple quantum well active layer 10, first barrier layer 9, the first graded index limiting layer 8 and part N-type under-clad layer 7 are carried out etching; Second when highly being 1100nm, and P type contact layer 14, P type top covering 13 and the second graded index limiting layer 12 are carried out etching.
7, adopt buffered hydrofluoric acid solution (HF) erosion removal SiO
2Figure;
8, at the upper surface spin on polymers medium 15 of wafer, spin coating thickness is higher than etching depth, and is heating and curing, and uses RIE etch polymers medium 15 surfaces to active ring resonator 1 afterwards, finishes the wafer surface planarization;
Wherein, owing to after etching is finished some epitaxial loayers in the step 6, can form some spaces in wafer surface, form the flat surface that thickness are higher than etching depth by spin on polymers medium 15, carry out subsequent treatment again, realize the planarization of wafer surface with this.
Wherein, polymeric media 15 can be the poly-methyl esters methyl acrylate (PMMA) of fluorinated polyimide (PI), modification, benzocyclobutane rare (BCB) etc.
9, at front wafer surface spin coating photoresist, P type electrode pattern window is prepared in photoetching, follows splash-proofing sputtering metal Ti and Au, and thickness is respectively 50nm and 100nm, adopts stripping technology to prepare P type electrode 4;
10, spin coating 2000～3000nm thickness polymer on active micro-ring resonant cavity 1 is prepared the polymer bar shaped straight wave guide 3 of single mode transport by lithography steps such as exposure, developments;
11, wafer is carried out reduction processing, reduced thickness to the 100～200 μ m with wafer utilize magnetron sputtering or electron beam evaporation technique to be respectively 50nm and 100nm at chip back surface evaporation AuGeNi and Au(thickness), make N-type electrode 5.
12, wafer is cleaved into narrow strip along scribe line, and sticks on the base with the silver slurry, the bonding that goes between is encapsulated in the shell at last, finishes the preparation of polymer and Ⅲ-ⅤZu Huahewubandaoti ring laser.
Referring to Fig. 2 and Fig. 3, the preparation process of GaAs base semiconductor ring laser is as follows:
1, on the N-type GaAs substrate 6 in (100) crystal orientation, with metal organic chemical vapor deposition or molecular beam epitaxial method growth thickness 1000～2000nm, doping content 1 * 10
18Cm
-3N-type AlGaAs under-clad layer 7; This AlGaAs under-clad layer 7 is the epitaxially grown resilient coating of double as simultaneously, to be reduced in the defect concentration of epitaxial growth thin layer on this.
2, grow the successively first graded index limiting layer 8, first barrier layer 9, AlGaAs multiple quantum well active layer 10, second barrier layer 11 and the second graded index limiting layer 12 of AlGaAs ternary system material;
Wherein, the thickness 50nm of the first graded index limiting layer 8, doping content 1 * 10
18Cm
-3Thickness 5 * the 10nm of first barrier layer 9; Thickness 5 * the 6nm of AlGaAs multiple quantum well active layer 10; The thickness 10nm of second barrier layer 11; The thickness 50nm of the second graded index limiting layer 12, doping content 1 * 10
18Cm
-3
Wherein, first barrier layer 9, AlGaAs multiple quantum well active layer 10 and second barrier layer 11 do not carry out any doping.
3, growth thickness 1000～2000nm, doping content 1 * 10
18Cm
-3P type AlGaAs top covering 13, last growth thickness 100～200nm, doping content〉1 * 10
19Cm
-3GaAs contact layer 14, to reduce the contact resistance of P type electrode 4;
4, after epitaxial material growth is finished, obtain preparing the required epitaxial wafer of active ring resonator 1, wafer is used acetone, ethanol and washed with de-ionized water successively, dry up with high pure nitrogen;
5, utilize the plasma enhanced chemical gaseous phase deposition to amass at wafer surface deposit one deck compact structure, the thickness SiO at 500～1500nm
2Film utilizes the photomask of active ring resonator 1 to carry out photoetching, and prepares SiO with reactive ion etching method at wafer
2Figure.
6, use SiO
2Figure is made mask, and with inductance coupled reaction ion etching technology etching some epitaxial loayers, etching depth is smaller or equal to first height, and more than or equal to second height, active ring resonator 1 transferred on the wafer;
During specific implementation, N-type under-clad layer 7, the first graded index limiting layer 8, first barrier layer 9, AlGaAs multiple quantum well active layer 10, second barrier layer 11, the second graded index limiting layer 12, P type top covering 13 and P type contact layer 14 are respectively as epitaxial loayer, determine the scope of etching epitaxial loayer by first and second etching depths, the concrete value of etching depth determines that according to needs in the practical application embodiment of the invention is not restricted this.
Wherein, first highly is: P type contact layer 14 upper surfaces are to the distance of N-type under-clad layer 7 upper surfaces; Second highly is: the distance of P type contact layer 14 upper surface to the second barrier layers 11 upper surfaces, for example: first when highly being 3500nm, and P type contact layer 14, P type top covering 13, the second graded index limiting layer 12, second barrier layer 11, AlGaInAs multiple quantum well active layer 10, first barrier layer 9, the first graded index limiting layer 8 and part N-type under-clad layer 7 are carried out etching; Second when highly being 1100nm, and P type contact layer 14, P type top covering 13 and the second graded index limiting layer 12 are carried out etching.
7, adopt the buffered hydrofluoric acid solution corrosion to remove SiO
2Figure;
8, at the upper surface spin on polymers medium 15 of wafer, spin coating thickness is higher than etching depth, and is heating and curing, and uses RIE etch polymers medium 15 surfaces to active ring resonator 1 afterwards, finishes the wafer surface planarization;
Wherein, owing to after etching is finished some epitaxial loayers in the step 6, can form some spaces in wafer surface, form the flat surface that thickness are higher than etching depth by spin on polymers medium 15, carry out subsequent treatment again, realize the planarization of wafer surface with this.
Wherein, polymer can be rare etc. for: the poly-methyl esters methyl acrylate of fluorinated polyimide, modification, benzocyclobutane.
9, at front wafer surface spin coating photoresist, the P type electrode pattern window that photoetching is prepared, then splash-proofing sputtering metal Ti and Au adopt stripping technology to prepare P type electrode 4;
Wherein, the thickness of splash-proofing sputtering metal Ti and Au is respectively 50nm and 100nm.
10, spin coating thickness is 2000～3000nm polymer on active micro-ring resonant cavity 1, prepares the polymer bar shaped straight wave guide 3 of single mode transport by lithography steps such as exposure, developments;
11, wafer is carried out reduction processing, reduced thickness to the 100～200 μ m with wafer utilize magnetron sputtering or electron beam evaporation technique to be respectively 50nm and 100nm at chip back surface evaporation AuGeNi and Au(thickness), make N-type electrode 5.
12, wafer is cleaved into narrow strip along scribe line, and sticks on the base with the silver slurry, the bonding that goes between is encapsulated in the shell at last, finishes the preparation of polymer and Ⅲ-ⅤZu Huahewubandaoti ring laser.
Wherein, number ranges such as the thickness described in the embodiment of the invention and doping content except particular provisions, are all selected according to the needs in the practical application, and the embodiment of the invention does not limit this.
Wherein, the metal organic chemical vapor deposition method that is applied in the embodiment of the invention, molecular beam epitaxial method, plasma enhanced chemical gaseous phase deposition are long-pending, photoetching technique, reactive ion etching method, inductance coupling high reactive ion etching technology, stripping technology, magnetron sputtering or electron beam evaporation technique, lead-in wire bonding etc. are the known technology in the semiconductor technology, for conventionally known to one of skill in the art, the embodiment of the invention is not done at this and is given unnecessary details.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, the invention described above embodiment sequence number does not represent the quality of embodiment just to description.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the semiconductor ring laser device of a perpendicular coupling structure, it is characterized in that, described semiconductor ring laser device comprises: by the active ring resonator that semi-conducting material is made, described active ring resonator is: any closed circuit that ridge waveguide or slab waveguide constitute
Be manufactured with P type electrode and N-type electrode on the described active ring resonator, be used for realizing the lase of semi-conducting material, the sharp light of penetrating in the described active ring resonator is coupled into the bar shaped straight wave guide by vertical coupler, the described sharp light of penetrating of described bar shaped straight wave guide output.
2. the semiconductor ring laser device of a kind of perpendicular coupling structure according to claim 1 is characterized in that,
Described active ring resonator adopts the Ⅲ-ⅤZu Huahewubandaoti material system;
The composite system that described vertical coupler adopts polymer and Ⅲ-ⅤZu Huahewubandaoti to form.
3. the semiconductor ring laser device of a kind of perpendicular coupling structure according to claim 1 is characterized in that, described vertical coupler is specially: power coupling efficiency is the vertical coupler of 1-5%.
4. the semiconductor ring laser device of a kind of perpendicular coupling structure according to claim 1 is characterized in that, described bar shaped straight wave guide and output end face normal are 5～15 ° of deflections.
5. a preparation method who is used for the semiconductor ring laser device of the described a kind of perpendicular coupling structure of the arbitrary claim of claim 1-4 is characterized in that, said method comprising the steps of:
1) on the N-type substrate in 100 crystal orientation, with metal organic chemical vapor deposition or molecular beam epitaxial method grow successively N-type under-clad layer, the first graded index limiting layer, first barrier layer, multiple quantum well active layer, second barrier layer, the second graded index limiting layer, P type top covering and the P type contact layer of preset thickness and concentration;
2) after the epitaxial material growth is finished, obtain preparing the required epitaxial wafer of described active ring resonator, wafer is used acetone, ethanol and washed with de-ionized water successively, dry up with high pure nitrogen;
3) at wafer surface deposit one deck SiO
2Film utilizes the photomask of described active ring resonator to carry out photoetching, and prepares SiO at wafer
2Figure;
4) use described SiO
2Figure is made the some epitaxial loayers of mask etching, etching depth smaller or equal to first the height, and more than or equal to second the height, described active ring resonator is transferred on the wafer;
Wherein, described first highly is: P type contact layer upper surface is to the distance of N-type under-clad layer upper surface; Described second highly is: the distance of P type contact layer upper surface to the second barrier layer upper surface;
5) adopt the buffered hydrofluoric acid solution corrosion to remove described SiO
2Figure;
6) at the upper surface spin on polymers medium of wafer, spin coating thickness is higher than described etching depth, and is heating and curing, and the described polymeric media of etching is finished the wafer surface planarization to the surface of described active ring resonator afterwards;
7) at front wafer surface spin coating photoresist, P type electrode pattern window is prepared in photoetching, and then splash-proofing sputtering metal Ti and Au adopt stripping technology to prepare P type electrode;
8) spin on polymers on described active micro-ring resonant cavity is prepared the polymer bar shaped straight wave guide of single mode transport by lithography step;
9) wafer is carried out reduction processing, utilize magnetron sputtering or electron beam evaporation technique at chip back surface evaporation AuGeNi and Au, form the N-type electrode;
10) wafer is cleaved into narrow strip along scribe line, and sticks on the base with the silver slurry, the bonding that goes between is encapsulated in the shell at last, finishes the preparation of polymer and Ⅲ-ⅤZu Huahewubandaoti ring laser.
6. preparation method according to claim 5 is characterized in that, when preparation InP base semiconductor ring laser, the operating process of step 1) is specially:
On the N-type InP in 100 crystal orientation substrate, with metal organic chemical vapor deposition or molecular beam epitaxial method growth N-type InP under-clad layer;
According to preset thickness and concentration grow the successively first graded index limiting layer, first barrier layer, AlGaInAs multiple quantum well active layer, second barrier layer and the second graded index limiting layer of AlGaInAs quaternary material;
Growing P-type InP top covering, the InGaAs contact layer of growing at last.
7. preparation method according to claim 5 is characterized in that, when preparation GaAs base semiconductor ring laser, the operating process of step 1) is specially:
On the N-type GaAs in 100 crystal orientation substrate with metal organic chemical vapor deposition or molecular beam epitaxial method growth N-type AlGaAs under-clad layer;
The first graded index limiting layer of the AlGaAs ternary system of growing successively material, first barrier layer, AlGaAs multiple quantum well active layer, second barrier layer and the second graded index limiting layer;
Growing P-type AlGaAs top covering, the GaAs contact layer of growing at last.
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