CN103501200A - Tunable optical chaotic signal generation device and method - Google Patents
Tunable optical chaotic signal generation device and method Download PDFInfo
- Publication number
- CN103501200A CN103501200A CN201310444536.8A CN201310444536A CN103501200A CN 103501200 A CN103501200 A CN 103501200A CN 201310444536 A CN201310444536 A CN 201310444536A CN 103501200 A CN103501200 A CN 103501200A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- laser
- signal
- active area
- tunable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a tunable optical chaotic signal generation device, which comprises a tunable laser, a semiconductor ring laser and a Bragg waveguide grating. Two sections of straight waveguides are respectively in parallel with a straight waveguide part of an active ring resonant cavity and are used for inputting and outputting optical signals. The invention additionally relates to a tunable optical chaotic signal generation method, which comprises a tuning process and an optical chaotic signal generation process, wherein the tuning process is to adjust injection current on a metal electrode of the tunable laser. The device has the advantages that since an SRL (Semiconductor Ring Laser), the tunable laser for light injection and the Bragg waveguide grating for light feedback are integrated on a chip, the manufacturing process is simple, the integration level is high, the stability is high, the cost is lower and the device is suitable for photonic chip integration. Moreover, the optical chaotic signal generation method has the advantages that since chaotic signal generation steps are provided based on the generation device, the scheme is more simple and clearer and the chaotic signal generation process is more efficient.
Description
Technical field
The invention belongs to the optical communication technique field, relate to the technical field that the chaotic signal in the security photo-communication technical field produces, be specifically related to a kind of tunable optical chaotic signal generating device of based semiconductor ring laser and the production method of optical chaos signal.
Background technology
Along with the development of information technology, particularly, in fields such as finance, business, the confidentiality demand of communication is more and more higher, and information encryption also receives increasing concern.Traditional software encryption technique is based on the complexity of algorithm and the length of key, and the security performance of this method reduces along with the increase of amount of information, and, because cryptographic algorithm need to consume the regular hour, enciphering rate is severely limited.After the sixties in 20th century, chaos phenomenon was found, the communication mode that uses chaotic carrier to be encoded in physical layer has improved security performance and the enciphering rate of communication system greatly, becomes the new selection of information encryption.The optical chaos signal has randomlikeness, to the sensitive dependence of initial condition and the characteristics such as broadband power spectrum density of similar noise, make it be particularly suitable for security photo-communication.At present, the application of optical chaos signal in security photo-communication become of paramount importance in chaos application, one of the most promising application.
The optical chaos signal generally can be divided into light injection, light feedback and three kinds of modes of electro-optical feedback by its producing method.The external optical injection chaos system refers to the outside injection light that increases a suitable intensity on laser, thereby itself and laser are interacted, produces chaotic signal.The light feedback refers in the laser outside, by placing feedback device, makes the part of the output light of laser turn back to after reflection device in original laser, makes laser produce chaotic signal.Electro-optical feedback refers to the part of the output light of laser converted to the signal of telecommunication, after amplifying time delay, with the biasing of laser, is superimposed and controls laser and produce chaotic signal.Yet, the bandwidth of the optical chaos signal that above three kinds of modes produce is narrower, and in the chaotic secret optical communication, the transmission rate of signal and transmission capacity depend on the bandwidth as the optical chaos signal of carrier wave. therefore, the bandwidth that improves the optical chaos signal is the only way of realizing the secure communication of high speed chaotic laser light.
At present, occurred the mode of multiple generation Chaotic Wideband Signal both at home and abroad, the most generally based on light feedback and light, injected the combination of two kinds of modes, and produced the optical chaos signal in broadband.Wherein, two kinds of the most common methods are to utilize two lasers respectively as master and slave laser: wherein a kind of method is, outside the main laser chamber, optical feedback return circuit is set, a part of light signal of output that then will have the main laser of feedback loop is injected into from laser, makes it to export Chaotic Wideband Signal; Another kind method is that optical feedback return circuit is being set from laser chamber, simultaneously with the main laser freely turned round to from laser, carrying out the light injection, make it to export Chaotic Wideband Signal.These two kinds of modes can produce the optical chaos signal of broader bandwidth.But, because system is to consist of a plurality of individual devices, neither utilize the monolithic of device integrated, affect again the stability of system.
Summary of the invention
Purpose of the present invention, for overcoming deficiency of the prior art, provides a kind of tunable optical chaotic signal generating device and production method.
To achieve these goals, technical scheme of the present invention is: the tunable optical chaotic signal generating device, it is characterized in that, and comprise tunable laser, semiconductor ring laser device (the active ring resonator of SRL/) and Bragg waveguide optical grating; Two sections straight wave guides respectively with the straight wave guide partial parallel of active ring resonator, input and output for light signal, straight wave guide is connected to form by waveguide active area and waveguide passive region, laser is connected in waveguide active area one end of one of straight wave guide, and waveguide active area one end of another straight wave guide is the Bragg waveguide optical grating.
Further, waveguide passive region one end of described straight wave guide is coupled with output waveguide, output waveguide and straight wave guide in obtuse angle, for reducing boundary reflection.
Further, above-mentioned obtuse angle is 173 °.
Further, the Bragg waveguide optical grating is formed on the top covering of waveguide active area.
Further, on the waveguide active area, comprise metal electrode, for regulating the chaotic signal wavelength.
Further, be coated with metal electrode on tunable laser, for regulating the Injection Current of tunable laser.
The tunable optical chaotic signal producing method, comprise tuning process and optical chaos signal production process, and wherein tuning process is for regulating the Injection Current signal on the tunable laser metal electrode;
Optical chaos signal production process is: the active area of the light signal input straight wave guide that tunable laser produces also amplifies, the laser signal amplified is coupled in the semiconductor ring laser device through the waveguide passive region and transmission in the counterclockwise direction, the clockwise low light level that counterclockwise laser pumping of transmission rises simultaneously is coupled in the straight wave guide of track type waveguide opposite side, then amplify and be input to the Bragg waveguide optical grating and reflect rear portion successively along active area through the Bragg waveguide optical grating through active area, the waveguide passive region is coupled in the semiconductor ring laser device and produces nonlinear interaction with the laser signal of former counter clockwise direction transmission, produce chaotic signal, chaotic signal is successively by waveguide passive region and output waveguide output.
Further, above-mentioned tuning process comprises the Injection Current of regulating the metal electrode on metal electrode on tunable laser and/or Bragg waveguide optical grating, in order to wavelength and the intensity of the laser signal that changes laser signal that tunable laser produces and the reflection of Bragg waveguide optical grating.
Beneficial effect of the present invention: tunable optical chaotic signal generating device based semiconductor ring laser provided by the invention, the chaotic signal of generation is based on light feedback with certain frequency and intensity and the interior nonlinear interaction of semiconductor ring laser device (SRL) under the light injection and produces.This device is integrated in a chip by SRL, the tunable laser of injecting for light and for the Bragg waveguide optical grating of light feedback, and manufacturing process is simple, and integrated level is high, and stability is high, and cost is lower, is suitable for photon chip integrated.The optical chaos signal generating method simultaneously proposed has proposed the generation step of chaotic signal based on generating means, make scheme more simple and clear, and the process that produces chaotic signal is more efficient.
The accompanying drawing explanation
Fig. 1 is the structural representation of optical chaos signal generation apparatus of the present invention;
Fig. 2 is the structure chart of tunable laser;
Fig. 3 is the structure chart of Bragg waveguide optical grating.
Description of reference numerals: tunable laser 1 sinks to the bottom layer 11, active layer 12, top covering 13, grating region 14, semiconductor ring laser device (SRL) 2, Bragg waveguide optical grating 3, sink to the bottom layer 31, active layer 32, top covering 33, grating region 34, waveguide active area 41, waveguide active area 42, waveguide passive region 51, waveguide passive region 52, metal electrode 6, output waveguide 71, output waveguide 72
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and, with reference to accompanying drawing, the present invention is described in further details.
As shown in Figure 1, a kind of tunable optical chaotic signal generating device of the present embodiment, comprise tunable laser 1, active ring resonator 2 and Bragg waveguide optical grating 3; Two sections straight wave guides form active ring resonator 2 with the track type waveguide-coupled respectively in track type waveguide both sides, straight wave guide is by waveguide active area 41(42) and waveguide passive region 51(52) connect to form, tunable laser 1 is connected in waveguide active area 41 1 ends of one of straight wave guide, and waveguide active area 42 1 ends of another straight wave guide are Bragg waveguide optical grating 3.
The waveguide passive region 51(52 of above-mentioned straight wave guide) end all is coupled with output waveguide 71(72), output waveguide 71(72) and straight wave guide is in obtuse angle, for reducing output reflection.And above-mentioned obtuse angle is preferably 173 °, output waveguide tilts 7 ° with respect to the waveguide passive region.In this programme, tunable laser 1 is semiconductor laser, utilizes semiconductor technology to make; The Bragg waveguide optical grating is formed on the waveguide active area, and comprises metal electrode on the waveguide active area, for adjusting the feedback signal wavelength.
Tuning in order to realize the tunable laser place, the present embodiment is provided with metal electrode on tunable laser, and this metal electrode is used for regulating the Injection Current of tunable laser, and then realizes wavelength and the intensity of regulation output laser signal.
A kind of tunable optical chaotic signal producing method of the present embodiment comprises tuning process and optical chaos signal production process, and wherein tuning process is the input signal of the metal electrode of the optical chaos signal generation apparatus of adjusting above-described embodiment; To reach tuning purpose.Optical chaos signal production process is: tunable laser produces the active area of laser signal input straight wave guide and amplifies, the laser signal amplified is coupled in the semiconductor ring laser device through the waveguide passive region and transmission in the counterclockwise direction, the clockwise low light level that counterclockwise laser pumping of transmission rises simultaneously is coupled in the straight wave guide of track type waveguide opposite side, then be input to the Bragg waveguide optical grating and reflect rear portion successively along active area through the Bragg waveguide optical grating through active area, the waveguide passive region is coupled in the track type waveguide and produces nonlinear interaction with the laser signal of former counter clockwise direction transmission, produce chaotic signal, chaotic signal is successively by waveguide passive region and output waveguide output.As preferred embodiment, in tuning methods, tuning process comprises the Injection Current of regulating the metal electrode on metal electrode on tunable laser and/or Bragg waveguide optical grating, in order to wavelength and the intensity of the laser signal that changes laser signal that tunable laser produces and the reflection of Bragg waveguide optical grating.
Because the main advantage of this programme is to adopt semiconductor technology to carry out integral manufacturing, to overcome existing system, by a plurality of individual devices, form the integrated defect that simultaneously affects the stability of system of the monolithic that does not utilize device.Therefore, another preferred embodiment of this programme is as follows: the Bragg waveguide optical grating is produced on an end of the active area of SRL straight wave guide.Tunable laser is driven by low noise power supply, and the light signal of output, after the active area of straight wave guide amplifies, is injected in SRL counterclockwise.Simultaneously, the low light level of SRL clockwise direction output is by after Bragg waveguide optical grating selective reflecting, again via the SRL that is amplified into of active waveguide.There is the injection light of certain frequency and intensity and feedback light at the active ring resonator of SRL() under the nonlinear interaction of inner laser field, at SRL output output Chaotic Wideband Signal.The Injection Current that changes tunable laser grating region and Bragg grating can change seeded wavelength and feedback wavelength, regulates seeded wavelength and can produce wider chaotic signal with the feedback wavelength.
In such scheme, SRL is under the driving of low noise power supply, can produce that to take be counterclockwise main two-way laser output, the two piece straight wave guides parallel with resonant cavity are comprised of one section active waveguide and one section passive wave guide respectively, and afterbody at one end arranges certain inclination angle.Tunable laser is to be integrated in the end of active area of the input waveguide of SRL by existing active device manufacture craft.Driven by low noise power supply, and realize the tuning of wavelength by changing seeded wavelength.The Bragg waveguide optical grating is the method etched diffraction grating on covering with electron beam exposure, and it is produced on active area one end of the direct waveguide of SRL, changes Injection Current and can change reflection wavelength.
The operation principle of said apparatus is as follows:
As shown in Figure 1, tunable laser 1 produces single longitudinal mode under low noise power supply drives, after active area 41 amplifications through straight wave guide, passive region 51 by straight wave guide couples light in the track type waveguide, under the driving of low noise power supply, the light be injected into counterclockwise in the track type waveguide can encourage the clockwise low light level, and the clockwise low light level is coupled away by the waveguide passive region 52 of track type waveguide opposite side.And enter into Bragg waveguide optical grating 2 through active area 42.Enter into Bragg waveguide optical grating 2 light can because the reflection of grating some be coupled to the semiconductor ring laser device along waveguide active area 42, waveguide passive region 52, counterclockwise injection light and clockwise feedback light produce chaotic signal under the nonlinear interaction of semiconductor ring laser device, be coupled out by waveguide passive region 51 and 52, come along output waveguide 71 and 72 outputs.By regulating metal electrode 6, can change the Injection Current of tunable laser 1 and Bragg waveguide optical grating, inject light and feedback light wavelength and intensity thereby can change, realize the output of tunable chaotic signal.The semiconductor ring laser device is for generation of Chaotic Wideband Signal in this device, and the output waveguide 71 and 72 with certain angle of inclination is in order to prevent from exporting the end face reflection of light.
Tunable laser as shown in Figure 2, be to form by sinking to the bottom layer 11, active layer 12, top covering 13 and grating region 14, the mode that adopts electron beam exposure by the end at waveguide active area 41 forms at two kinds of gratings of the two ends of covering etching certain depth, different cycles.By low noise power supply, driven, by regulating Injection Current, the reflectance spectrum of two ends grating can produce stack at different wavelength places, thereby can realize the tuning of output wavelength.This tunable laser as main laser, is injected the light signal of certain frequency some strength in device to the counter clockwise direction from laser SRL.
Being Bragg waveguide optical grating 3 as shown in Figure 3, is by sinking to the bottom layer 31, active layer 32, and top covering 33, grating region 34 forms, and the method that adopts electron beam exposure by the end at waveguide active area 42 etching certain depth and grating in cycle on covering form.The Bragg waveguide optical grating has the selection reflex to the light of incident, by electrode, controls the reflection wavelength that Injection Current can be regulated the Bragg waveguide optical grating, is used for providing feedback light for SRL.Waveguide active area 42 and 42 is for amplifying optical signals power.It is in order to prevent from exporting the end face reflection of light that the output waveguide 71 and 72 at certain angle of inclination (7 ° of left and right) is arranged.
Because tunable laser, SRL, Bragg waveguide optical grating and waveguide active area 41 and 42 thereof are all the structures with gain function, and their structure is all identical, comprise substrate layer, active layer and covering, so the making of these several parts can be carried out simultaneously, sinking to the bottom while grown quantum trap active layer on material, then apply covering, utilize mask plate to adopt the grating of the mode etching certain specification of electron beam exposure on the covering of tunable laser and Bragg waveguide optical grating.Owing in etching process, not carving and wearing active layer, thereby can not produce threshold value damage to active material, and production method is simple, so but unit once-forming in manufacturing process has saved cost, greatly increased again rate of finished products.
The foregoing is only the specific embodiment of the present invention, one skilled in the art will appreciate that and can carry out various modifications, replacement and change to the present invention in the disclosed technical scope of the present invention.Therefore the present invention should not limited by above-mentioned example, and should limit with the protection range of claims.
Claims (8)
1. a tunable optical chaotic signal generating device, is characterized in that, comprises tunable laser, semiconductor ring laser device (the active ring resonator of SRL/) and Bragg waveguide optical grating; Two sections straight wave guides respectively with the straight wave guide partial parallel of active ring resonator, input and output for light signal, straight wave guide is connected to form by waveguide active area and waveguide passive region, laser is connected in waveguide active area one end of one of straight wave guide, and waveguide active area one end of another straight wave guide is the Bragg waveguide optical grating.
2. device according to claim 1, is characterized in that, waveguide passive region one end of described straight wave guide is coupled with output waveguide, output waveguide and straight wave guide in obtuse angle, for reducing boundary reflection.
3. device according to claim 2, is characterized in that, described obtuse angle is 173 °.
4. according to the described device of any one claim of claim 1-3, it is characterized in that, the Bragg waveguide optical grating is formed on the top covering of waveguide active area.
5. device according to claim 4, is characterized in that, on the waveguide active area, comprises metal electrode, for regulating the chaotic signal wavelength.
6. according to the described device of claim 4 or 5, it is characterized in that, be coated with metal electrode on tunable laser.
7. the tunable optical chaotic signal producing method, comprise tuning process and optical chaos signal production process, and wherein tuning process is for regulating the Injection Current signal on the tunable laser metal electrode;
Optical chaos signal production process is: the active area of the light signal input straight wave guide that tunable laser produces also amplifies, the laser signal amplified is coupled in the semiconductor ring laser device through the waveguide passive region and transmission in the counterclockwise direction, the clockwise low light level that counterclockwise laser pumping of transmission rises simultaneously is coupled in the straight wave guide of track type waveguide opposite side, then amplify and be input to the Bragg waveguide optical grating and reflect rear portion successively along active area through the Bragg waveguide optical grating through active area, the waveguide passive region is coupled in the semiconductor ring laser device and produces nonlinear interaction with the laser signal of former counter clockwise direction transmission, produce chaotic signal, chaotic signal is successively by waveguide passive region and output waveguide output.
8. method according to claim 7, it is characterized in that, tuning process comprises the Injection Current of regulating the metal electrode on metal electrode on tunable laser and/or Bragg waveguide optical grating, in order to wavelength and the intensity of the laser signal that changes laser signal that tunable laser produces and the reflection of Bragg waveguide optical grating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310444536.8A CN103501200B (en) | 2013-09-23 | 2013-09-23 | Tunable optical chaotic signal generation device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310444536.8A CN103501200B (en) | 2013-09-23 | 2013-09-23 | Tunable optical chaotic signal generation device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103501200A true CN103501200A (en) | 2014-01-08 |
| CN103501200B CN103501200B (en) | 2017-02-01 |
Family
ID=49866378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310444536.8A Expired - Fee Related CN103501200B (en) | 2013-09-23 | 2013-09-23 | Tunable optical chaotic signal generation device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103501200B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108873176A (en) * | 2018-06-12 | 2018-11-23 | 东南大学 | A kind of close-coupled three-dimensional Wavelength division multiplexer/demultiplexer and implementation method |
| CN110361604A (en) * | 2019-07-23 | 2019-10-22 | 北京无线电计量测试研究所 | Electric field detecting quantum assembly and preparation method and quantum field strength sensor |
| CN110740030A (en) * | 2019-09-23 | 2020-01-31 | 太原理工大学 | Integrated chaotic signal generator with double-microring waveguide structure |
| CN112327270A (en) * | 2020-11-04 | 2021-02-05 | 国科光芯(海宁)科技股份有限公司 | On-chip integrated chaotic radar chip and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100290035A1 (en) * | 2008-01-31 | 2010-11-18 | Yuncai Wang | Chaotic optical time domain reflectometer method and apparatus |
| CN102412502A (en) * | 2011-11-24 | 2012-04-11 | 电子科技大学 | High-power semiconductor ring laser |
| CN202333439U (en) * | 2011-11-24 | 2012-07-11 | 电子科技大学 | High-power semiconductor ring laser |
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN203466821U (en) * | 2013-09-23 | 2014-03-05 | 电子科技大学 | Tunable optical chaotic signal generating device |
-
2013
- 2013-09-23 CN CN201310444536.8A patent/CN103501200B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100290035A1 (en) * | 2008-01-31 | 2010-11-18 | Yuncai Wang | Chaotic optical time domain reflectometer method and apparatus |
| CN102412502A (en) * | 2011-11-24 | 2012-04-11 | 电子科技大学 | High-power semiconductor ring laser |
| CN202333439U (en) * | 2011-11-24 | 2012-07-11 | 电子科技大学 | High-power semiconductor ring laser |
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN203466821U (en) * | 2013-09-23 | 2014-03-05 | 电子科技大学 | Tunable optical chaotic signal generating device |
Non-Patent Citations (1)
| Title |
|---|
| 张鑫 等: "用半导体环形激光器产生混沌信号", 《强激光与粒子束》, vol. 24, no. 7, 31 July 2012 (2012-07-31), pages 1732 - 1736 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108873176A (en) * | 2018-06-12 | 2018-11-23 | 东南大学 | A kind of close-coupled three-dimensional Wavelength division multiplexer/demultiplexer and implementation method |
| CN110361604A (en) * | 2019-07-23 | 2019-10-22 | 北京无线电计量测试研究所 | Electric field detecting quantum assembly and preparation method and quantum field strength sensor |
| CN110361604B (en) * | 2019-07-23 | 2021-08-13 | 北京无线电计量测试研究所 | Electric field detection quantum component, preparation method and quantum field intensity sensor |
| CN110740030A (en) * | 2019-09-23 | 2020-01-31 | 太原理工大学 | Integrated chaotic signal generator with double-microring waveguide structure |
| CN110740030B (en) * | 2019-09-23 | 2022-07-05 | 太原理工大学 | Integrated chaotic signal generator with double-microring waveguide structure |
| CN112327270A (en) * | 2020-11-04 | 2021-02-05 | 国科光芯(海宁)科技股份有限公司 | On-chip integrated chaotic radar chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103501200B (en) | 2017-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203466821U (en) | Tunable optical chaotic signal generating device | |
| CN107658693B (en) | A kind of single-chip integration chaos laser chip based on directional scatter feedback | |
| CN102280814B (en) | Wideband optical chaotic signal source chip structure based on annular laser | |
| CN104158085A (en) | No-time-delay flat-frequency-spectrum broadband photon integrated chaos semiconductor laser | |
| CN102510001B (en) | Frequency-doubling green light laser | |
| CN1977430B (en) | Fundamental wave light source and wavelength converter | |
| JP6350266B2 (en) | Single photon generator and single photon generation method | |
| CN103501200A (en) | Tunable optical chaotic signal generation device and method | |
| CN101330191A (en) | SF pulse optical fibre laser and method for generating SF pulse seeds laser | |
| CN103337779B (en) | The middle infrared-gas laser of pumped fiber | |
| CN104466636A (en) | Single-frequency Q-switched pulsed fiber laser | |
| CN103545703A (en) | Light-operated triggering laser device | |
| CN107749564B (en) | monolithic integrated laser chip for generating chaotic light by high-scattering doped optical waveguide feedback | |
| US6717963B1 (en) | Raman fiber amplifier using a wide bandwidth continuous wave pump | |
| CN109256671A (en) | A kind of orphan's mode locked fiber laser implementation method based on graphene and stannic disulfide laminated film | |
| CN202206028U (en) | Broadband optical chaos signal source chip structure based on annular laser | |
| CN203327013U (en) | Optical chaotic signal generator based on semiconductor ring laser | |
| CN202217910U (en) | Broadband optical chaos signal source chip structure based on ring laser | |
| CN105098591A (en) | Continuous wave self-Raman laser of wavelength-locked LD resonance pumping | |
| CN104600549A (en) | Mode-controllable coherent feedback optical fiber random laser device | |
| CN203521887U (en) | Light controlled trigger laser | |
| CN102386560B (en) | Broad-band optical chaotic signal source chip structure based on ring laser | |
| US7519091B2 (en) | All-optical 2R regenerator using self-seeded laser diode | |
| CN101976801B (en) | Semiconductor amplifier of transverse magnetic polarization photonic crystal slow-light effect | |
| CN114401047B (en) | Chaotic bandwidth expansion method based on optical fiber modulation instability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170201 Termination date: 20200923 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |