CN101201435A - Method for preparing polymer vertical coupler - Google Patents
Method for preparing polymer vertical coupler Download PDFInfo
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- CN101201435A CN101201435A CNA2007101935247A CN200710193524A CN101201435A CN 101201435 A CN101201435 A CN 101201435A CN A2007101935247 A CNA2007101935247 A CN A2007101935247A CN 200710193524 A CN200710193524 A CN 200710193524A CN 101201435 A CN101201435 A CN 101201435A
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Abstract
The invention relates to a manufacture method of an integrated optical waveguide device for the optical communication, and in particular to a manufacture method for a polymer vertical coupler. The invention comprises the following steps: a. a layer of polymer cladding material is coated on a clean substrate by spin; b. a layer of metal membrane and a layer of positive photoresist are deposited on top of the device obtained from step a; the lithography mask and the reactive ion etching are conducted for the manufacture of the buried channel on the optical waveguide core layer; c. a layer of polymer core layer material is coated by spin on the device obtained from step b; the reactive ion etching is conducted for the etching erosion of excessive polymer core layer on top of the metal membrane and the buried; and the metal membrane is removed through a wet method; d. a layer of polymer buffer layer material is coated by spin on the device obtained from step c; e. a layer of polymer core layer material is coated by spin on the device obtained from step d; a layer of positive photoresist is coated on top of the polymer core layer; the lithography mask and the reactive ion etching are conducted; a layer of polymer is coated for the cladding. The invention can effectively manufacture the high quality vertical coupler.
Description
Technical field
The present invention relates to the preparation method of optical communication-integrated optical wave guide device, be specifically related to a kind of method of utilizing metallic film mask and reactive ion etching technology to make polymer vertical coupler.
Background technology
Along with the development of integrated optics technique and the continuous expansion of application, the size of integrated optical wave guide device is more and more littler, and integration density is more and more higher, wherein is subjected to people's close attention based on the device research of vertical coupler structure.Have following two advantages because realize the multilayer device of vertical integrated direction: the one, can improve the integration density of device greatly, reduce device cost; Can make the design of device and layout more flexible in addition exactly, reduce the difficulty of device preparation processing.
Polymer optical waveguide device owing to advantages such as material category are abundant, manufacture craft is simple, input cost film-forming apparatus is lower, is being subjected to more research.The preparation technology of traditional polymer vertical coupler mainly comprises the polymkeric substance spin-coating film, steps such as photo etched mask and etching moulding, the making flow process is: the under-clad layer that at first is preparation optical waveguide structure on clean substrates, then thereon by spin coating, photoetching, technologies such as etching form the following optical waveguide structure of vertical coupler, commonly used is rectangle or ridged waveguide structure, spin on polymers intermediate buffering layer on this optical waveguide structure then, then thereon by spin coating, photoetching, technologies such as etching form the last optical waveguide structure of vertical coupler, last spin on polymers top covering.
In the above-mentioned preparation flow, the preparation of the last waveguiding structure of vertical coupler is a critical process of whole preparation.Because in this technology, need to adopt alignment make coupling mechanism on waveguiding structure and the following waveguiding structure relative position parameter when designing, otherwise, will influence the coupling power of vertical coupler, and then influence the performance of device.Alignment process then requires the upper surface of sample very smooth, could guarantee that when overlay alignment the Mask template forms evenly and closely with the upper surface of sample and contacts, thereby when making photolithographic exposure, the exposure focusing position of sample different parts is identical, the homogeneity of waveguiding structure in the assurance.The sample upper surface is smooth more, and then the precision of alignment is high more, and the homogeneity of the last waveguiding structure of the vertical coupler of preparation is good more.
Conventional process flow is directly to carry out on the following waveguiding structure that has prepared when spin on polymers intermediate buffering layer.Because down waveguiding structure all is rectangle or ridged, during spin on polymers, directly over rectangle or ridge optical waveguide structure, be difficult to form more smooth upper surface thereon.Waveguide core layer also can form uneven upper surface in the relevant position on the polymkeric substance of spin coating on this upper surface, thereby will influence the precision of the alignment that carries out thereafter and the homogeneity that goes up waveguiding structure.When relatively thinner the and vertical coupled zone of thicker, the intermediate buffering layer thickness of duct thickness was smaller instantly, above-mentioned to influence situation especially serious.During the vertical coupled multilayer device of relatively more typical as preparation micro-resonance loop, because the size smaller (typically less than 100 μ m magnitudes) of micro-resonance loop, especially the vertical coupled zone of micro-resonance loop and channel waveguide or micro-resonance loop and micro-resonance loop is all very little, the sample upper surface topical manifestations that is positioned at the vertical coupler coupling regime of classic method preparation goes out unevenness, all has a strong impact on for the optical waveguide structure on upper strata and the homogeneity of alignment between lower floor's optical waveguide structure and upper strata optical waveguide structure pattern.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of improved polymer vertical coupler to overcome the defective that existing preparation technology exists, guarantees the homogeneity of vertical coupler structure, enhances product performance.
The method for preparing polymer vertical coupler that the present invention proposes may further comprise the steps:
A. spin coating one layer of polymeric clad material on the substrate of cleaning is followed baked and cured in vacuum drying chamber, the optical waveguide under-clad layer thickness and the waveguide core layer thickness sum of the thickness of covering for setting;
B. deposition layer of metal film and one deck positive photoresist on the formed device of step a adopt negative mask to carry out photo etched mask, carry out reactive ion etching then, prepare the buried channel of optical waveguide sandwich layer;
C. spin on polymers core material on the formed device of step b, baked and cured in vacuum drying chamber is carried out reactive ion etching then, and the unnecessary core polymer layer of metal film layer and raceway groove top is etched away, and then the metallic film wet method is removed;
D. spin on polymers cushioning layer material on the formed device of step c, baked and cured in vacuum drying chamber;
E. spin on polymers core material on the formed device of step e, baked and cured in vacuum drying chamber, on core polymer layer, be coated with one deck positive photoresist, adopt positive mask to carry out photo etched mask, then carry out reactive ion etching, be coated with the one layer of polymeric top covering, just obtain polymer vertical coupler.
The inventive method characteristics are, when making the following coupling optical waveguide of polymer vertical coupler, adopt the polymer material of preparation one deck same thickness earlier, and plate the thin metal mask layer of one deck, be coated with one deck positive photoresist, adopt negative mask blank to carry out photoetching, develop and remove the photoresist and the metal level of waveguide position on the light Mask pattern, adopt the coupling of reactive ion etching or plasma to strengthen and induce lithographic technique, obtain the buried channel of the optical waveguide sandwich layer that both sides are covered by metal film layer, spin on polymers waveguide core layer material then, adopt the coupling of reactive ion etching or plasma to strengthen and induce lithographic technique, control etching speed and time, the excess polymer core material of metal film layer top is carved, removed metal film layer with wet etching, the spin on polymers cushioning layer material, obtain the following coupling optical waveguide upper surface of very smooth polymer vertical coupler thus, thereby guarantee the fabricating quality of coupling optical waveguide structure on the vertical coupler.
The vertical coupler structure that this method is related comprises the specifically structure of coupled mode such as direct light waveguide and direct light waveguide, direct light waveguide and bent lightguide, bent lightguide and direct light waveguide and bent lightguide and bent lightguide etc.Especially vertical coupled and the little ring of polymkeric substance light and the little ring waveguide of light of little ring of polymkeric substance light and direct light waveguide is vertical coupled.
The inventive method is compared with traditional polymer vertical coupler preparation method, the principal element that influences the device flatness among the present invention is the thickness of metallic film mask layer, because its one-tenth-value thickness 1/10 is generally in 20～50nm scope, the uneven degree of the waveguide surface that it causes will be very little, therefore optical waveguide upper surface under the present invention can obtain in the very smooth polymer vertical coupler, thus guarantee to go up in the vertical coupler the accurate alignment of optical waveguide and following optical waveguide and prepare the high-quality waveguiding structure of going up uniformly.This method is specially adapted to make the relatively thinner vertical coupler of intermediate buffering layer, as the vertical coupled device of micro-resonance loop type, vertical light switching device etc.
Description of drawings
Fig. 1 is the process chart for preparing little ring waveguide bend of a kind of polymkeric substance light and light straight wave guide vertical coupler by the inventive method;
Fig. 2 is a kind of vertical coupled little ring wave filter structural representation of the inventive method preparation;
Fig. 3 is the straight wave guide vertical coupler structural drawing of the inventive method preparation.
Embodiment
Description by following examples is further elaborated the technical characterstic of the inventive method.
The present invention can be applied to great majority and adopt reactive ion etching (RIE) or plasma coupling to induce the polymer vertical coupler of etching (ICP) technology moulding.In order to reach best technique effect, need be to the kind and the growth thickness of metallic film, and the etching speed of the unnecessary waveguide core layer on the etching metal film layer and selection of time suitable parameters and strict control.Be clad material with methyl methacrylate and glytidyl methacrylate multipolymer (refractive index n=1.47) respectively below, be vertical coupled little ring wave filter of core material preparation and be clad material with methyl methacrylate and glytidyl methacrylate multipolymer (refractive index n=1.52) with methyl methacrylate and glytidyl methacrylate multipolymer (refractive index n=1.55), BCB (refractive index n=1.56) polymkeric substance is that the vertical coupler structural drawing of core material preparation is that example illustrates concrete implementation process.
Preparation vertical coupled little ring wave filter as shown in Figure 2.
With reference to Fig. 1, its preparation process is as follows:
A. methyl methacrylate that spin coating one deck 6 μ m are thick on the Si substrate that cleans up and glytidyl methacrylate multipolymer clad material (refractive index n=1.47), cured 1 hour at 100 ℃ with vacuum drying chamber, continue thick methyl methacrylate and the glytidyl methacrylate multipolymer clad material (refractive index n=1.47) of spin coating last layer 2 μ m, cured 3 hours at 120 ℃ with vacuum drying chamber;
B. the thick metal A l thin layer of evaporation one deck 50nm on the formed device of step a is coated with one deck positive photoresist, adopts the negative mask of straight wave guide to carry out photo etched mask, adopts O
2Carry out reactive ion etching, O
2Airshed be 25sccm, RF power is 40W, the time is about 40 minutes, it is wide to obtain 4 μ m, the buried channel of the optical waveguide sandwich layer that 2 μ m are thick;
C. spin coating methyl methacrylate and glytidyl methacrylate multipolymer core material (refractive index n=1.52) on the formed device of step b cured 3 hours at 125 ℃ with vacuum drying chamber.Adopt O
2Carry out reactive ion etching, control etching speed and time, the unnecessary core polymer layer of metal film layer and raceway groove top is etched away, wet method is removed metallic film, cures 10 minutes at 120 ℃ then;
D. spin coating methyl methacrylate and glytidyl methacrylate multipolymer cushioning layer material (refractive index n=1.47) on the formed device of step c, thickness is between 0.1～1.0 μ m, cures 3 hours at 120 ℃ then;
E. spin coating methyl methacrylate and glytidyl methacrylate multipolymer core material (refractive index n=1.52) on the formed device of steps d, cured 3 hours at 125 ℃ with vacuum drying chamber, on core polymer layer, be coated with one deck positive photoresist, adopt the positive mask of the little ring of light to carry out photo etched mask, adopt O
2Carry out reactive ion etching, O
2Airshed be 25sccm, RF power is 40W, the time is about 40 minutes.
Made vertical coupled little ring wave filter structure as shown in Figure 2, among the figure 1 is the input waveguide that is positioned at lower floor, the 2nd, be positioned at the output optical waveguide of lower floor, the 3rd, be positioned at little ring waveguide on upper strata, actual two little ring waveguides and the vertical coupled structure of straight wave guide of comprising in this structure.
Preparation vertical coupler as shown in Figure 3.
A. methyl methacrylate that spin coating one deck 6 μ m are thick on the Si substrate that cleans up and glytidyl methacrylate multipolymer clad material (refractive index n=1.55), cured 1 hour at 100 ℃ with vacuum drying chamber, continue thick methyl methacrylate and the glytidyl methacrylate multipolymer clad material (refractive index n=1.55) of spin coating last layer 4 μ m, cured 3 hours at 120 ℃ with vacuum drying chamber;
B. the thick Metal Cr thin layer of sputter one deck 30nm on the formed device of step a is coated with one deck positive photoresist, adopts the negative mask of straight wave guide to carry out photo etched mask, adopts O
2Carry out reactive ion etching, O
2Airshed be 50sccm, RF power is 40W, the time is about 50 minutes, it is wide to obtain 4 μ m, the buried channel of the optical waveguide sandwich layer that 4 μ m are thick;
C. spin coating BCB polymer core layer material (refractive index n=1.56) on the formed device of step b cured 1 hour at 200 ℃ with vacuum drying chamber.Adopt O
2Carry out reactive ion etching, control etching speed and time, the unnecessary core polymer layer of metal film layer and raceway groove top is etched away, wet method is removed metallic film, cures 10 minutes at 100 ℃ then;
D. spin coating methyl methacrylate and glytidyl methacrylate multipolymer cushioning layer material (refractive index n=1.55) on the formed device of step c, thickness is between 0.1～1.0 μ m, cures 3 hours at 120 ℃ then;
E. spin coating BCB polymer core layer material (refractive index n=1.56) on the formed device of steps d cured 1 hour at 200 ℃ with vacuum drying chamber.On core polymer layer, be coated with one deck positive photoresist, adopt the positive mask of direct light waveguide to carry out photo etched mask, adopt O2 to carry out reactive ion etching, the airshed of O2 is 50sccm, RF power is 40W, and the time is about 50 minutes, in the above spin coating methyl methacrylate and glytidyl methacrylate multipolymer top covering material (refractive index n=1.55), thickness is 6.0 μ m, cures 3 hours at 120 ℃ then.
Made vertical coupled little ring wave filter structure as shown in Figure 3,4 among the figure is the vertical coupled optical waveguides that are positioned at lower floor, the 5th, be positioned at the vertical coupled optical waveguide on upper strata.
Claims (1)
1. the preparation method of a polymer vertical coupler is characterized in that may further comprise the steps:
A. spin coating one layer of polymeric clad material on the substrate of cleaning is followed baked and cured in vacuum drying chamber, the optical waveguide under-clad layer thickness and the waveguide core layer thickness sum of the thickness of covering for setting;
B. deposition layer of metal film and one deck positive photoresist on the formed device of step a adopt negative mask to carry out photo etched mask, carry out reactive ion etching then, prepare the buried channel of optical waveguide sandwich layer;
C. spin on polymers core material on the formed device of step b, baked and cured in vacuum drying chamber is carried out reactive ion etching then, and the unnecessary core polymer layer of metal film layer and raceway groove top is etched away, and then the metallic film wet method is removed;
D. spin on polymers cushioning layer material on the formed device of step c, baked and cured in vacuum drying chamber;
E. spin on polymers core material on the formed device of step e, baked and cured in vacuum drying chamber, on core polymer layer, be coated with one deck positive photoresist, adopt positive mask to carry out photo etched mask, then carry out reactive ion etching, be coated with the one layer of polymeric top covering, just obtain polymer vertical coupler.
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| CNA2007101935247A CN101201435A (en) | 2007-12-11 | 2007-12-11 | Method for preparing polymer vertical coupler |
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| CNA2007101935247A CN101201435A (en) | 2007-12-11 | 2007-12-11 | Method for preparing polymer vertical coupler |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN104953226A (en) * | 2015-06-01 | 2015-09-30 | 中北大学 | Terahertz waveguide coupler based on sacrificial layer technology and manufacturing method thereof |
| CN106842422A (en) * | 2017-04-14 | 2017-06-13 | 吉林大学 | A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device |
| CN108321119A (en) * | 2018-01-22 | 2018-07-24 | 中国科学院半导体研究所 | The three-dimensional light realized based on technique after CMOS is electrically integrated filter and preparation method thereof |
| CN108693602A (en) * | 2018-06-07 | 2018-10-23 | 上海理工大学 | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof |
| CN113933935A (en) * | 2021-11-03 | 2022-01-14 | 山东师范大学 | Method for preparing KTP nonlinear runway type micro-ring resonator |
-
2007
- 2007-12-11 CN CNA2007101935247A patent/CN101201435A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259190A (en) * | 2013-05-13 | 2013-08-21 | 天津大学 | Annular semiconductor laser of vertical coupling structure and preparing method thereof |
| CN104953226A (en) * | 2015-06-01 | 2015-09-30 | 中北大学 | Terahertz waveguide coupler based on sacrificial layer technology and manufacturing method thereof |
| CN104953226B (en) * | 2015-06-01 | 2017-11-17 | 中北大学 | Terahertz waveguide coupler based on sacrificial layer technology and preparation method thereof |
| CN106842422A (en) * | 2017-04-14 | 2017-06-13 | 吉林大学 | A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device |
| CN108321119A (en) * | 2018-01-22 | 2018-07-24 | 中国科学院半导体研究所 | The three-dimensional light realized based on technique after CMOS is electrically integrated filter and preparation method thereof |
| CN108693602A (en) * | 2018-06-07 | 2018-10-23 | 上海理工大学 | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof |
| CN113933935A (en) * | 2021-11-03 | 2022-01-14 | 山东师范大学 | Method for preparing KTP nonlinear runway type micro-ring resonator |
| US11681099B2 (en) | 2021-11-03 | 2023-06-20 | Shandong Normal University | Method to build monolithic ring-shape frequency converter on potassium titanyl phosphate water |
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