CN113985526B - Preparation method of lithium niobate thin film waveguide micro-ring based on overlay - Google Patents
Preparation method of lithium niobate thin film waveguide micro-ring based on overlay Download PDFInfo
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- CN113985526B CN113985526B CN202111250064.3A CN202111250064A CN113985526B CN 113985526 B CN113985526 B CN 113985526B CN 202111250064 A CN202111250064 A CN 202111250064A CN 113985526 B CN113985526 B CN 113985526B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
Abstract
The invention provides a preparation method of a lithium niobate thin film waveguide micro-ring based on an alignment technology. The basic scheme is as follows: preparing a loop waveguide mask on a lithium niobate thin film substrate by adopting an ultraviolet lithography and metal coating process; preparing a straight waveguide mask on a lithium niobate thin film substrate by adopting ultraviolet lithography, metal coating and lift-off processes; etching the lithium niobate thin film substrate by adopting an etching method, and transferring the metal mask pattern to the lithium niobate thin film layer; and (5) cleaning and removing the mask to obtain a lithium niobate thin film waveguide micro-ring device sample. By adopting the method, the process precision is optimized from the common photoetching precision to the overlay precision, and even if a common ultraviolet light machine with the photoetching line width precision of more than 1um is used, the micro-ring device with the clearance requirement of less than 0.8um line width can be prepared, so that the cost is greatly reduced, and the preparation efficiency is improved.
Description
Technical Field
The application relates to the technical field of optical communication, in particular to a lithium niobate thin film waveguide micro-ring preparation method based on overlay.
Background
The concept of integrated optics was proposed in 1969 by Miller in bell laboratories in the united states, from which the prelude to the study of photonic device integration techniques was uncovered. The silicon-based photonics is always an integrated optical maximum research hot spot due to the very mature silicon-based electronics preparation process at present, and the lithium niobate photonics is one of the hot spot research fields of the current integrated optics because the two unique advantages of the lithium niobate photonics, namely the strong nonlinear effect and the high electro-optic effect, are protruding in the fields of ultra-high speed photoelectric signal conversion, weak light nonlinear optics, optical frequency comb and the like.
As well as the development process of integrated electronic circuits, photonic integration is also developed towards high integration and miniaturization, and meanwhile, the photonic device based on the lithium niobate thin film has the advantages of small waveguide section size, high electric field density, strong nonlinear effect, low half-wave voltage length product, small size and the like. However, the refractive index regulation in the lithium niobate waveguide core based on chemical component modification is weak, the corresponding waveguide bending radius is too large, and the current lithium niobate crystal preparation technology cannot be suitable for the application of a future high-density integrated optical circuit.
The prior art mainly uses a semiconductor process of electron beam lithography combined with ion beam etching to prepare a lithium niobate photonic integrated device, but equipment required by the electron beam lithography process is expensive, and the process is complex and cannot be popularized on a large scale.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a lithium niobate micro-ring waveguide preparation technology based on an ultraviolet lithography technology, and the prepared lithium niobate micro-ring device can be used in the fields of ultrahigh-speed photoelectric signal conversion, weak light nonlinear optics, optical frequency comb and the like, has lower process cost and is beneficial to large-scale batch production.
A preparation method of lithium niobate thin film waveguide micro-ring based on overlay comprises the following steps:
1) Obtaining a lithium niobate thin film sample to be subjected to photoetching; the lithium niobate thin film sample comprises a lithium niobate layer, a silicon dioxide layer and a silicon substrate;
2) Preparing a photoetching mask plate comprising a ring waveguide structure and a first layer of alignment marks;
3) Preparing a micro-ring waveguide mask on a lithium niobate thin film substrate by using a method combining ultraviolet lithography and metal coating, wherein the method comprises the steps of preparing a micro-ring waveguide mask on the lithium niobate thin film substrate through the lithography mask comprising a ring waveguide structure and a first layer of alignment marks;
4) Preparing a photoetching mask plate comprising a straight waveguide structure and a second layer of alignment marks;
5) Using ultraviolet lithography to prepare a photoresist pattern of the straight waveguide through the lithography mask plate containing the straight waveguide structure and the second layer of the alignment mark by adopting an alignment method on the lithium niobate film substrate plated with the micro-ring waveguide mask;
6) Plating a layer of mask on the surface of the prepared photoresist pattern to obtain an intermediate sample;
7) Placing the intermediate sample into stripping liquid, removing photoresist, and leaving a mask pattern to obtain a target sample to be etched;
8) Etching the target sample;
9) And cleaning a mask remained on the etched sample by adopting an etching solution to obtain the lithium niobate thin film waveguide micro-ring device.
In one implementation manner of the method, the method for preparing the micro-ring waveguide mask on the lithium niobate thin film substrate by using the ultraviolet lithography and metal coating film combined method through the lithography mask plate comprising the ring waveguide structure and the overlay mark first layer comprises the following steps:
preparing a photoresist pattern of the micro-ring waveguide on the surface of the lithium niobate thin film substrate by using ultraviolet lithography through the lithography mask plate comprising the ring waveguide structure and the first layer of the overlay mark;
plating a layer of mask on the surface of the photoresist pattern of the prepared micro-ring waveguide to obtain an intermediate sample;
and (3) placing the intermediate sample into stripping liquid, removing photoresist, and leaving a mask pattern of the micro-ring waveguide.
In another implementation manner of the method, the method for preparing the micro-ring waveguide mask on the lithium niobate thin film substrate by using the combination of ultraviolet lithography and metal coating comprises the following steps:
plating a layer of mask on the surface of the lithium niobate thin film substrate;
preparing a photoresist pattern of the micro-ring waveguide on the surface of the mask through a photoetching mask plate comprising a ring waveguide structure and a first layer of alignment mark by using ultraviolet lithography to obtain an intermediate sample;
etching the non-photoresist covered area of the intermediate sample surface, leaving a mask pattern of the micro-ring waveguide.
Preferably, the overlay mark comprises an alignment pattern portion and a scale portion, the scale being readable by 0.1um.
Preferably, the ultraviolet lithography method is contact lithography or maskless lithography.
Preferably, the plating mask method is one of electron beam evaporation plating, magnetron sputtering plating, chemical vapor deposition or dielectric plating.
Preferably, the mask material is one of chromium, nickel, silicon dioxide or silicon.
Preferably, the stripping solution is NMP solution or acetone solution.
Preferably, the etching method is dry etching or wet etching.
Preferably, the dry etching is one of ICP etching, RIE etching or IBE etching.
The lithium niobate thin film waveguide micro-ring prepared by the invention generally requires that the gap width is 0.3-0.8um, and the photolithography process used is required to reach the precision of 0.1um. Compared with the prior art, the ultraviolet photoetching machine has the advantages of photoetching line width precision of more than 1um, low cost and easy obtainment, and effectively solves the problem that the high-density lithium niobate photonic integrated device is limited due to the preparation process.
Drawings
Fig. 1 is a schematic flow chart corresponding to a preparation method of a lithium niobate thin film waveguide micro-ring based on alignment according to an embodiment of the present application;
fig. 2 is a schematic cross-sectional structure of a lithium niobate thin film sample according to an embodiment of the present application;
fig. 3 is a schematic top view of the overall process of the preparation method of the lithium niobate thin film waveguide micro-ring based on alignment according to the embodiment of the present application;
fig. 4 is a schematic diagram of an overall process left-hand view of a preparation method of a lithium niobate thin film waveguide micro-ring based on alignment according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a process for fabricating a micro-ring waveguide mask using a lift-off process according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a process for fabricating a micro-ring waveguide mask using an etching process according to an embodiment of the present disclosure;
fig. 7 is a schematic diagram of an overlay mark according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
In order to solve the problems in the prior art, the embodiment of the application provides a lithium niobate thin film waveguide micro-ring preparation method based on alignment. Fig. 1 is a schematic flow chart corresponding to a preparation method of a lithium niobate thin film waveguide micro-ring based on alignment according to an embodiment of the present application. The method specifically comprises the following steps:
step 1: and obtaining a lithium niobate thin film sample to be subjected to photoetching.
Step 2: and preparing a photoetching mask plate comprising a ring waveguide structure and a first layer of an overlay mark.
Step 3: and preparing a micro-ring waveguide mask on the lithium niobate thin film substrate by adopting ultraviolet lithography and coating processes through the lithography mask plate comprising the ring waveguide structure and the first layer of the overlay mark.
Step 4: and preparing a photoetching mask plate comprising a straight waveguide structure and a second layer of an overlay mark.
Step 5: preparing a straight waveguide mask on a lithium niobate film substrate plated with a micro-ring waveguide mask by adopting ultraviolet lithography and coating processes to obtain a target sample to be etched;
step 6: etching the target sample obtained in the step 5;
step 7: and cleaning a mask remained on the etched sample by adopting an etching solution to obtain the lithium niobate thin film waveguide micro-ring device.
Specifically, in step 1, a lithium niobate thin film sample includes a lithium niobate layer, a silicon dioxide layer, and a silicon substrate, as shown in fig. 2. The invention mainly adopts a micro-nano processing method to prepare the needed microstructure. Typical microring devices are divided into microring waveguides and straight waveguide regions, with process diagrams shown in fig. 3 and 4.
In the step 3, a lift-off process or an etching process can be used for preparing the micro-ring waveguide mask.
The preparation of the micro-ring waveguide mask by the lift-off process is shown in fig. 5, and comprises the following steps:
a. preparing a photoresist pattern of a micro-ring on the surface of a lithium niobate film substrate by ultraviolet lithography, wherein the ultraviolet lithography method can be contact lithography or maskless lithography;
b. a metal or nonmetal mask is coated on the surface of the photoresist by utilizing a metal coating method, wherein the coating method can be electron beam evaporation coating, magnetron sputtering coating, chemical vapor deposition, dielectric coating and the like, and the mask can be Cr, ni and other metals, or SiO 2 Nonmetallic materials such as Si;
c. the photoresist is removed by placing the sample in a stripping solution, which may be nmp, acetone or other organic substances that dissolve the photoresist, leaving behind a mask pattern. Wherein, the peeling process can be heated or not.
The etching process for preparing the micro-ring waveguide mask is shown in fig. 6, and comprises the following steps:
a. a metal or nonmetal mask is coated on the surface by utilizing a metal coating, the coating method can be electron beam evaporation coating, magnetron sputtering coating, chemical vapor deposition, dielectric coating and the like, and the mask can be Cr, ni and other metals or SiO 2 Nonmetallic materials such as Si;
b. preparing a photoresist pattern of the micro-ring on the surface of the mask by ultraviolet lithography, wherein the ultraviolet lithography method can be contact lithography or maskless lithography;
c. the non-photoresist covered area is etched by using an etching method, and a mask structure of the micro-ring is left, wherein the etching method can be dry etching such as ICP, RIE, IBE or wet etching.
In step 5, optionally, a lift-off process is used to prepare a straight waveguide mask on a lithium niobate thin film substrate plated with a micro-ring waveguide mask, including the following steps:
a. preparing a photoresist pattern of the straight waveguide on the surface of the lithium niobate thin film substrate after the step 3 by utilizing ultraviolet lithography by adopting an alignment method, wherein the ultraviolet lithography method can be contact lithography or maskless lithography;
b. plating a metal or nonmetal mask on the surface of the photoresist by utilizing a metal plating method, wherein the plating method can be electron beam evaporation plating and magnetron sputtering platingThe film can be chemical vapor deposition, dielectric coating, etc., and the mask can be Cr, ni, etc., or SiO 2 Nonmetallic materials such as Si;
c. the photoresist is removed by placing the sample in a stripping solution, which may be nmp, acetone or other organic substances that dissolve the photoresist, leaving behind a mask pattern. Wherein, the peeling process can be heated or not.
In step 6, optionally, the method of etching the lithium niobate thin film may be dry etching such as ICP, RIE, IBE or wet etching.
Specific examples are also disclosed herein for a clearer understanding of the process of making the present application.
Example 1
The adopted x-cut lithium niobate film sheet is purchased from Jinan crystal, si substrate layer thickness 525um, siO 2 Layer thickness 4.7um, LN layer thickness 600nm. The prepared micro-ring has a radius of 80um, a waveguide width of 2.4um, and a gap between the ring and the straight waveguide of 0.4um.
The process scheme comprises the following steps:
a) Drawing and preparing a negative photoresist mask A, which comprises a ring waveguide structure and a first layer of alignment marks, wherein the center of the ring waveguide is provided with coordinates (0, 0), the radius is 80um, and the width of the ring waveguide is 2.4um; and drawing and preparing a negative photoresist mask B, wherein the negative photoresist mask B comprises a straight waveguide structure and a second layer of alignment marks, the center coordinates of the straight waveguide are (0, -82.8 um), the length is 2cm, and the width of the straight waveguide is 2.4um. The overlay mark includes an alignment pattern portion and a scale portion, the scale being readable by 0.1um. As shown in fig. 7.
B) A MA6 ultraviolet contact photoetching machine is adopted, and negative photoresist with the model number of 202 is adopted. The spin speed of the photoresist is 4000 turns, the pre-baking temperature is 110 ℃, the time is 90s, the photolithographic mask A is adopted, the exposure measurement is 330mj, the post-baking temperature is 115 ℃, the time is 120s, and the development time is 45s;
c) And adopting electron beam evaporation coating, wherein the total plating metal Cr is 200nm, and the coating speed is 0.1nm/s.
D) The sample was put into NMP solution, heated for 3min, then the photoresist and Cr on the photoresist were removed, and then the sample was taken out, and purified water and NMP (full: n-methylpyrrolidone) solution is circularly cleaned for 2 times, each cleaning time is 5min, and finally, a nitrogen gun is used for drying;
e) A MA6 ultraviolet contact photoetching machine is adopted, and negative photoresist with the model number of 202 is adopted. The spin speed of the photoresist is 4000 turns, the pre-baking temperature is 110 ℃, the time is 90s, the photolithography mask B is adopted for alignment, the exposure measurement is 330mj, the post-baking temperature is 115 ℃, the time is 120s, and the development time is 45s;
f) Checking the reading of the overlay scale under a microscope, if the error is larger than 0.1um, washing out the photoresist by using nmp solution, and repeating the step E until the overlay error is smaller than 0.1um;
g) And adopting electron beam evaporation coating, wherein the total plating metal Cr is 200nm, and the coating speed is 0.1nm/s.
H) Placing the sample into nmp solution, heating for 3min, removing photoresist and Cr on the photoresist, taking out the sample, circularly cleaning with clear water and nmp solution for 2 times, cleaning for 5min each, and blow-drying with nitrogen gun;
i) Etching LN on the sample by adopting an ICP etching method, wherein the etching depth is 300nm;
j) And after the Cr etching liquid is adopted to clean the redundant Cr mask, the SC-1 solution is adopted to clean the sample, so that the waveguide loss is reduced.
The foregoing detailed description has been provided for the purposes of illustration in connection with specific embodiments and exemplary examples, but such description is not to be construed as limiting the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications and improvements may be made to the technical solution of the present application and its embodiments without departing from the spirit and scope of the present application, and these all fall within the scope of the present application. The scope of the application is defined by the appended claims.
Claims (10)
1. The preparation method of the lithium niobate thin film waveguide micro-ring based on the overlay is characterized by comprising the following steps:
1) Obtaining a lithium niobate thin film sample to be subjected to photoetching; the lithium niobate thin film sample comprises a lithium niobate layer, a silicon dioxide layer and a silicon substrate;
2) Preparing a photoetching mask plate comprising a ring waveguide structure and a first layer of alignment marks;
3) Preparing a micro-ring waveguide mask on a lithium niobate thin film substrate by using a method combining ultraviolet lithography and metal coating, wherein the method comprises the steps of preparing a micro-ring waveguide mask on the lithium niobate thin film substrate through the lithography mask comprising a ring waveguide structure and a first layer of alignment marks;
4) Preparing a photoetching mask plate comprising a straight waveguide structure and a second layer of alignment marks;
5) Using ultraviolet lithography to prepare a photoresist pattern of the straight waveguide through the lithography mask plate containing the straight waveguide structure and the second layer of the alignment mark by adopting an alignment method on the lithium niobate film substrate plated with the micro-ring waveguide mask;
6) Plating a layer of mask on the surface of the prepared photoresist pattern to obtain an intermediate sample;
7) Placing the intermediate sample into stripping liquid, removing photoresist, and leaving a mask pattern to obtain a target sample to be etched;
8) Etching the target sample;
9) And cleaning a mask remained on the etched sample by adopting an etching solution to obtain the lithium niobate thin film waveguide micro-ring device.
2. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to claim 1, wherein the method for preparing the micro-ring waveguide mask on the lithium niobate thin film substrate by using the combination of ultraviolet light and metal coating film through the lithography mask plate comprising the ring waveguide structure and the alignment mark first layer comprises the following steps:
preparing a photoresist pattern of the micro-ring waveguide on the surface of the lithium niobate thin film substrate by using ultraviolet lithography through the lithography mask plate comprising the ring waveguide structure and the first layer of the overlay mark;
plating a layer of mask on the surface of the photoresist pattern of the prepared micro-ring waveguide to obtain an intermediate sample;
and (3) placing the intermediate sample into stripping liquid, removing photoresist, and leaving a mask pattern of the micro-ring waveguide.
3. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to claim 1, wherein the method for preparing the micro-ring waveguide mask on the lithium niobate thin film substrate by using the combination of ultraviolet light and metal coating film through a photoetching mask plate comprising a ring waveguide structure and an alignment mark first layer comprises the following steps:
plating a layer of mask on the surface of the lithium niobate thin film substrate;
preparing a photoresist pattern of the micro-ring waveguide on the surface of the mask through a photoetching mask plate comprising a ring waveguide structure and a first layer of alignment mark by using ultraviolet lithography to obtain an intermediate sample;
etching the non-photoresist covered area of the intermediate sample surface, leaving a mask pattern of the micro-ring waveguide.
4. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment of claim 1, wherein the alignment mark comprises an alignment pattern part and a scale part, and the scale can read 0.1um.
5. The method for preparing the lithium niobate thin film waveguide micro-ring based on the overlay according to any one of claims 1 to 3, wherein the ultraviolet lithography method is contact lithography or maskless lithography.
6. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to any one of claims 1 to 3, wherein the plating mask method is one of electron beam evaporation plating, magnetron sputtering plating, chemical vapor deposition or dielectric plating.
7. The method for preparing a lithium niobate thin film waveguide micro-ring based on alignment according to any one of claims 1 to 3, wherein the mask material is one of chromium, nickel, silicon dioxide or silicon.
8. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to claim 1 or 2, wherein the stripping solution is an NMP solution or an acetone solution.
9. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to claim 1 or 3, wherein the etching method is dry etching or wet etching.
10. The method for preparing the lithium niobate thin film waveguide micro-ring based on the alignment according to claim 9, wherein the dry etching is one of ICP etching, RIE etching or IBE etching.
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| CN114755761B (en) * | 2022-04-27 | 2023-01-24 | 北京航空航天大学 | Preparation method of lithium niobate thin film submicron line width ridge type optical waveguide based on chromium mask |
| CN116931367B (en) * | 2023-09-18 | 2024-01-19 | 济南量子技术研究院 | Lithium niobate thin film ridge waveguide modulator and preparation method thereof |
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| US8571362B1 (en) * | 2009-03-30 | 2013-10-29 | Mellanox Technologies Ltd. | Forming optical device using multiple mask formation techniques |
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| WO2003100487A1 (en) * | 2002-05-24 | 2003-12-04 | The Regents Of The University Of Michigan | Polymer micro-ring resonator device and fabrication method |
| US8399183B2 (en) * | 2009-05-13 | 2013-03-19 | Synopsys, Inc. | Patterning a single integrated circuit layer using automatically-generated masks and multiple masking layers |
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| CN101150242A (en) * | 2006-09-22 | 2008-03-26 | 中国科学院长春光学精密机械与物理研究所 | Electric pump micro cavity laser with integrated straight wave guide output |
| US8571362B1 (en) * | 2009-03-30 | 2013-10-29 | Mellanox Technologies Ltd. | Forming optical device using multiple mask formation techniques |
| CN112125276A (en) * | 2020-09-14 | 2020-12-25 | 中北大学 | Patterned etching method of lithium niobate single crystal thin film for mechanical sensor |
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