CN106842422A - A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device - Google Patents
A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device Download PDFInfo
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- CN106842422A CN106842422A CN201710245776.3A CN201710245776A CN106842422A CN 106842422 A CN106842422 A CN 106842422A CN 201710245776 A CN201710245776 A CN 201710245776A CN 106842422 A CN106842422 A CN 106842422A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12069—Organic material
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
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Abstract
The invention discloses a kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device and preparation method thereof, belong to technical field of photo communication, including covering, upper sandwich layer waveguide and lower sandwich layer waveguide, covering covers upper and lower two sandwich layers waveguide；The refractive index of covering, upper sandwich layer waveguide and lower sandwich layer waveguide is respectively n, n1、n2, wherein n1>n2>n；The sectional dimension of upper and lower sandwich layer waveguide is identical, and sectional dimension is determined by Effective Index Method；Upper and lower sandwich layer waveguide saves perpendicular coupling structure in X, and the optimal vertical range and angle between two sandwich layer waveguides are determined by beam propagation method.Device of the invention can not only realize the diode function in conversion of the light between different mode, and similar and circuit, can realize the one-way conduction of light；Maximum isolation is more than 58dB；The efficiency of patten transformation at wavelength 1550nm>99.9%.
Description
Technical field
The invention belongs to technical field of photo communication, and in particular to a kind of three-dimensional perpendicular coupling optical mode conversion-isolation is combined
Device.
Background technology
It is to meet the current communication being skyrocketed through and data as the optical communication technique of transmission medium using optical fiber or waveguide
The necessary means of transmission.Compared with legacy communications system, optical fiber and waveguide communication system have bandwidth, transmission capacity it is big,
The advantage such as loss is small, the bit error rate is low and anti-electromagnetic interference capability is strong.Particularly wavelength-division multiplex technique (WDM) is in optical-fiber network
Application, have effectively achieved the dilatation of optical transport network.
The mode simple structure that image intensifer is combined with wavelength-division multiplex technique, is broadband with good transmission performance
Provided the foundation with ultra-long span transmission.Existing long haul transmission system major part is carried out based on single-mode fiber, but prediction
Single-mode fiber Transmission system will occur capacity crisis in the year two thousand twenty or so.With information flow-rate explosive growth, using this
The transmission capacity of method is already close to the limit.Because time, frequency, polarization utilization rate are close to the limit, therefore, new skill need to be used
Art is possible to further improve the transmission capacity of optical fiber.Increase the side of one degree of freedom in a pattern for orthogonal space
Method, i.e. mode division multiplexing technology, can be effectively increased bandwidth.Mode division multiplexing technology is that more letters are transmitted using different optical modes
Breath, so far, mode division multiplexing technology is unique method not being used effectively in wire transmission, and oneself is through becoming optical fiber
One of with the developing direction of wave guide communication, and reported by substantial amounts of pertinent literature.
Optoisolator, also known as light isolator, is the optical fiber or waveguide passive device of a kind of nonreciprocal transmission.In optical-fibre communications
Be constantly present in system a lot of reasons generation backlight, such as the flashlight that light source is sent in optical sender, typically with
The form of flexible jumper is coupled in fibre circuit, and fiber end face gap can make about 4% reflected light towards light in joint
Transmit in source.The presence of this kind of backlight, self-coupling effect is produced between causing light path system, is made the work of laser and is become unstable
With produce reflecting background, light amplifier gain changes and produces self-excitation, causes the whole optical fiber telecommunications system cannot normal work
Make.If the optoisolator on laser output and image intensifer input or output end connection, it is possible to reach a solution of a problem.
Therefore, the basic function of optoisolator is exactly to realize the positive transmission of optical signal, while suppress reverse transfer, i.e., with irreversible
Property.Under normal circumstances, light path of the light in isotropism and anisotropic medium is reversible, therefore, the design of optoisolator
Must take into consideration how to break its invertibity.
Currently used optoisolator is to realize light not the nonreciprocity that polarization state is adjusted using magneto-optic memory technique
Reversible transmission.But its complex structure, higher to magneto-optic memory technique performance requirement, technique makes difficult；Due to using permanent magnet mostly,
Size is larger；And it is only capable of realizing optically isolated effect.At present, the optically isolated device changed and different mode between can simultaneously be realized
It is not suggested also.With the development of information technology, with reference to mode division multiplexing technology with optically isolated technology in one, and manufacture craft letter
Single device has the potentiality that grow a lot.
The content of the invention
The problem to be solved in the present invention is device architecture compact to design, using lower cost materials and simple process, is prepared
Optically isolated, and the multiple device that light is changed between different mode can be simultaneously realized, is opened up while optically isolated effect is realized
Open up the capacity of transmission information.Diode function in similar and circuit, and the biography of optic communication is increased due to the conversion of pattern
Defeated capacity.
The present invention is achieved through the following technical solutions：
A kind of three-dimensional perpendicular couples optical mode conversion-isolation multiple device, including covering, upper sandwich layer waveguide and lower sandwich layer ripple
Lead, covering covers upper and lower two sandwich layers waveguide, and the thickness of waveguide top covering covering is 0.5-1 μm；Covering, upper sandwich layer waveguide and
The refractive index of lower sandwich layer waveguide is respectively n, n1、n2, wherein n1>n2>n；The sectional dimension of upper and lower sandwich layer waveguide is identical；It is upper and lower
Sandwich layer waveguide saves perpendicular coupling structure in X, and the vertical range between two sandwich layer waveguides is 0.5-0.8 μm, between two sandwich layer waveguides
Angle be 0.8-1.0 °.
Further, described covering, upper sandwich layer waveguide, the material of lower sandwich layer waveguide are polymeric material.
Further, the length of the multiple device is 1000 μm -3000 μm.
The operation principle of the multiple device is as follows：
According to the n that selected material determines1, n2And n, upper and lower two sandwich layer waveguide two can be determined by Effective Index Method
There is the size (corresponding waveguide dimensions under the resonance point in accompanying drawing 2) of two waveguide sections during resonance in the pattern of kind, reach pattern
The purpose of conversion.Angle between optimal sandwich layer spacing and two waveguides can be calculated by beam propagation method, device is reached
To maximum coupling efficiency.This device is (same using the front end (the In Port A i.e. in accompanying drawing 1) of lower sandwich layer waveguide as input
When can as reverse transfer when output end), using the rear end (the Out Port B i.e. in accompanying drawing 1) in upper sandwich layer waveguide as defeated
Go out end (input during at the same time as reverse transfer).When light is input into from lower sandwich layer waveguide front-ends by just positive to waveguide
When, because light is uniformly input in waveguide, the light overwhelming majority being inspired in lower sandwich layer waveguide is LP01Pattern, due to
The LP being inspired in sandwich layer waveguide under (the corresponding waveguide dimensions of resonance point i.e. in accompanying drawing 2) under the device size of design01
The LP of the effective refractive index of the light of pattern and upper sandwich layer waveguide21aThe light of pattern has identical effective refractive index, in two waveguides
Light will occur resonance coupling, when two waveguides have the vertical interval and angle that determine, LP21aMode optical signal is from upper strata waveguide
Middle output, is capable of achieving patten transformation；When light is reversely input into by upper strata waveguide, also due to light is uniformly input to upper strata waveguide
In, the light being inspired in the waveguide of upper strata is most of for LP01The light of pattern, due to effective folding of each pattern in lower sandwich layer waveguide
Penetrate the LP being inspired in rate and upper strata waveguide01Pattern effective refractive index is all different, and upper and lower two-layer waveguide is not coupled, and light is still
So exported from upper sandwich layer waveguide, so as to realize the one-way conduction of light.
Compared with prior art, optical mode conversion proposed by the invention-isolation multiple device process is simple, using polymerization
Thing material is made by wet development and lithographic technique, it is not necessary to the complicated Magnetized Material that existing isolating device is used；Using
Perpendicular coupling structure makes, and is easy to three-dimensionally integrated.Device size is small, and length is only 2000 μm, 20 μm of width；Can realize from
LP01Pattern is to LP21aConversion between pattern, has expanded the capacity of optic communication, while backlight isolation is more than 50dB.This hair
It is bright to be suitable for producing in enormous quantities, integrated photon chip is can be applied to, or use as discrete component.
Brief description of the drawings
Fig. 1：Three-dimensional perpendicular of the invention couples the structural representation of optical mode conversion-isolation multiple device；
Wherein, Fig. 1 a are top view, and Fig. 1 b are 3 dimensional drawing, and Fig. 1 c are the bottom profile of sandwich layer waveguide；
Fig. 2：The operation principle of optical mode conversion-isolation multiple device；
Fig. 3：Light from In PortA be input into when two Waveguide field patterns；
It can be seen that this time can be coupled to upper strata waveguide and be converted to LP from lower floor's waveguide completely21aPattern
Light.
Fig. 4：Light from Out Port B be input into when two waveguides optical field distribution figure；
It can be seen that now going up the LP being inspired in sandwich layer waveguide01The light of pattern is not coupled to lower sandwich layer
In waveguide.There is no light energy to export in In Port A in lower sandwich layer waveguide.
Fig. 5：Optical mode conversion-isolation multiple device Making programme figure；
Fig. 6：Optical mode conversion-isolation multiple device test device figure；
From the specific wavelength flashlight of tunable laser output, it is input into lower floor's waveguide by optical fiber, is coupled to
After layer waveguide, receiving terminal can be with the pattern of light during the positive transmission of detection light and reverse transfer by CCD camera.By optical fiber
Input optical power meter can detect the insertion loss of positive transmission；The wave-length coverage of laser output light is adjusted, test insertion is damaged
Consumption is with wavelength change；After the completion of test, the optical fiber at fiber adapter device two ends is extracted, and conversion direction, by input
To output end, the insertion loss for detecting reverse transfer changes intelligent acess；Regulation laser output wavelength, measurement ± 10nm
In the range of reverse transfer when device insertion loss.
Fig. 7：Output optical power comparison diagram (1550nm) when light forward and reverse is propagated；
Compared for flashlight be respectively from port In Port A inputs, port Out Port B outputs, and flashlight from
When port Out Port B are reversely input into, port In Port A are exported, in wave-length coverage 1540nm≤λ≤1560nm, use up
Beamfoil spectrum calculates the output light energy for obtaining, and isolation is 58dB.
Fig. 8：Output optical power comparison diagram (650nm) when light forward and reverse is propagated；
Compared for flashlight be respectively from port In Port A inputs, port Out Port B outputs, and flashlight from
When port Out Port B are reversely input into, port In Port A are exported, the output light in wave-length coverage 640nm≤λ≤660nm
Energy, isolation is 50dB.
Specific embodiment
Embodiment 1
Optical mode conversion of the present invention-isolation multiple device and its manufacturing process as shown in figure 5, specific steps such as
Under：
1) from silicon as substrate, acetone soln cleaning silicon chip being used first, removing silicon chip surface organic impurities, ethanol is molten
Liquid is cleaned, the acetone of removal previous step cleaning residual, is rinsed repeatedly with deionized water, ethanol of the removal in silicon chip surface residual.
The thick 4 μm PMMA-GMA coverings (rotating speed 3000r/min, refractive index 1.49) of uniform spin coating, 120 on the silicon substrate for cleaning up
DEG C be heating and curing 120min.
2) spin coating sandwich layer PMMA-GMA core materials：Even 3.4 μm of the spin coating thickness on the PMMA-GMA coverings of spin coating
PMMA-GMA sandwich layers (rotating speed 3500r/min, refractive index 1.51), 120 DEG C of 120min that are heating and curing.
3) AM aluminum metallization mask and spin coating BP212 photoresists：It is thick one layer of about 200nm to be deposited with PMMA-GMA core materials surface
Aluminium film；Spin coating photoresist BP212,60 DEG C of 10min that are heating and curing, 90 DEG C of 20min that are heating and curing；
4) photoetching, development：Developed with 5 ‰ NaOH solution after ultraviolet photolithographic, remove the BP-212 photoresists of exposed portion
And aluminium mask below, obtain waveguide pattern；
5) PMMA-GMA sandwich layer waveguides are prepared：Using ICP lithographic methods, the PMMA-GMA sandwich layers that will be covered without aluminium film go
Remove, obtain clearly waveguide pattern；Uv-exposure 15s, and using the aluminium and photoresist in 5 ‰ NaOH solution removal waveguide.
6) covering is prepared：The thick 2 μm PMMA-GMA coverings (refractive index 1.49) of uniform spin coating, sandwich layer top (0.7 μm) (turns
Fast 5000r/min), 120 DEG C of 120min that are heating and curing；
7) upper sandwich layer is prepared：The SU-8 photoresists of the μ m-thick of spin coating 3.4,60 DEG C of solidifications 10min, 90 DEG C of solidification 20min, nature
Cooling；
8) above-mentioned devices use mask plate is carried out to version, ultraviolet photolithographic；Then SU-8 developing liquid developings about 8s is used, it
The SU-8 developer solutions of residual are washed in isopropanol afterwards, the isopropanol of residual is washed with deionized water afterwards；
9) top covering is prepared, on this sample thick 4 μm PMMA-GMA coverings (rotating speed 3000r/min) of uniform spin coating, 120
DEG C be heating and curing 120min.
Described evaporation Al masks are to be deposited with one layer with the method for evaporation on the PMMA-GMA core materials 3 of 3.4 μ m-thicks
About 200nm thick aluminium film 4.
Described spin coating BP-212 refers to that ultraviolet positive photoresist 5 (Beijing chemical reagent factory, BP212 types) is dropped in into evaporation
In the aluminium film 4 for finishing, print is placed on spin coater, rotation of substrate carries out film under the rotating speed of 3000rpm, spin coating
Time is 20-40s, photoresist 5 is evenly coated in aluminium film 4.
Described photoetching 1 and development 1 is that the mask plate with thermo-optical switch waveguide pattern is placed on photoresist 5, then
This sample is placed on litho machine, is irradiated with 365nm ultraviolet lights, exposed photoresist by the transparent area of mask plate, exposed
The light time is 3s, is transferred on photoresist 5 by the waveguide pattern exposed thermo-optical switch.By the sample after exposure with 5 ‰
NaOH developer solutions are developed, and developing time is 20-40s, then lightly rinse print surface repeatedly with deionized water.
Described ICP etchings are that the waveguide pattern of thermo-optical switch is transferred in aluminium film 4 first, are coupled using oxygen-sensitive
The 3.4 μ m-thick PMMA-GMA sandwich layers that plasma etching will be covered without aluminium film 4 are etched away, and expose PMMA-GMA under-clad layers 2.Aluminium film
4 in oxygen plasma etch, aluminium meeting and oxygen reaction, one layer of aluminum oxide is formed on surface, stop oxygen with below
Lower core layer polymer 3 reacts, and the part without aluminium film 4 continues to be reacted and etched away by oxygen, therefore aluminium film 4 is to clad polymer 3
Play good mask effect.The source power 400W of sense coupling, bias power is 30W, etches 204s.
Described removal BP-212 be by by development 1 after device in 365nm exposed under UV light 8-10s, using matter
Amount concentration is 5 ‰ NaOH solution development 30-60s, and the photoresist 5 and aluminium mask 4 that PMMA-GMA surfaces are covered are removed.
Described photoetching 2 and development 2 is that upper sandwich layer figure is transferred into sandwich layer photoresist SU-8 (6) using ultraviolet photolithographic,
Sample after exposure is developed with SU-8 developing solutions, time 8s removes the SU-8 developer solutions of residual with cyclopentanone solution afterwards,
The SU-8 developer solutions of residual are removed with deionized water afterwards.
Described evaporation Al masks are to be deposited with one layer with the method for evaporation on the PMMA-GMA core materials 3 of 3.4 μ m-thicks
About 200nm thick aluminium film 4.
The sample of preparation is positioned in sense coupling machine (ULVAC, CE-300I type), in oxygen bar
Sense coupling is carried out under part, now, with aluminium film 4 as mask, the covering covered without aluminium film 4 is etched away,
Expose PMMA-GMA coverings 2.When aluminium film 4 carries out sense coupling in oxygen atmosphere, aluminium meeting and oxygen reaction,
One layer of aluminum oxide is formed on surface, oxygen is stopped and is reacted with core layer polymer 3 below, the part for not having aluminium film 4 is continued
Reacted and etched away by oxygen, therefore aluminium film 4 plays good mask effect to core layer polymer 4.Inductively coupled plasma is carved
The source power 400W of erosion, bias power is 30W, etches 204s.Thus prepare meet the optical mode conversion of design requirement-every
From multiple device.
Optical mode conversion-isolation multiple device, covering covers upper and lower two sandwich layers waveguide, the covering covering of upper strata waveguide top
Thickness be 1 μm；The refractive index of covering, upper sandwich layer waveguide and lower sandwich layer waveguide is respectively n, n1、n2, wherein n is 1.49, n1For
1.574, n2It is 1.51.The sectional dimension of upper and lower sandwich layer waveguide is identical, is 3.4 μm；Upper and lower sandwich layer waveguide saves vertical coupling in X
Structure is closed, the vertical range between two sandwich layer waveguides is 0.67 μm, the angle between two sandwich layer waveguides is 0.92 °；
Wherein clad material is that PMMA-GMA materials, lower sandwich layer waveguide material are the PMMA-GMA for being doped with bisphenol-A material
Material, upper sandwich layer waveguide material are ultraviolet photolithographic glue material SU-8.
The length of the multiple device is 2300 μm.
The device of making is carried out into cutting cleavage with blade to end face afterwards, then is fixed on test platform, by optical fiber head
Just to lower sandwich layer waveguide core, from the specific wavelength flashlight of tunable laser output, the light in optical fiber is by uniform end face
It is coupled in lower sandwich layer waveguide, afterwards by lower sandwich layer waveguide, after being coupled to sandwich layer waveguide, receiving terminal passes through CCD camera
Can be with the pattern (i.e. near field hot spot) of the light of the positive transmission final output of detection light.Can be detected by optical fiber input optical power meter
The insertion loss of forward direction transmission；The wave-length coverage of laser output light is adjusted, test insertion loss is with wavelength change；Test is completed
Afterwards, the optical fiber at fiber adapter device two ends is extracted, and conversion direction, by the intelligent acess of input to output end, it is used for
Detect the insertion loss change of reverse transfer；Regulation laser output wavelength, device during reverse transfer in the range of measurement ± 10nm
Insertion loss.
Claims (4)
1. a kind of three-dimensional perpendicular couples optical mode conversion-isolation multiple device, it is characterised in that including covering, upper sandwich layer waveguide
And lower sandwich layer waveguide, the upper and lower two sandwich layers waveguide of covering covering, the thickness of covering covering is 0.5-1 μm；Covering, upper sandwich layer waveguide
And the refractive index of lower sandwich layer waveguide is respectively n, n1、n2, wherein n1>n2>n；The sectional dimension of upper and lower sandwich layer waveguide is identical, upper,
The waveguide of lower sandwich layer saves perpendicular coupling structure in X.
2. a kind of three-dimensional perpendicular as claimed in claim 1 couples optical mode conversion-isolation multiple device, it is characterised in that on
Vertical range between sandwich layer waveguide and lower sandwich layer waveguide is 0.5-0.8 μm, the angle between two sandwich layer waveguides for 0.8-
1.0°。
3. a kind of three-dimensional perpendicular as claimed in claim 1 couples optical mode conversion-isolation multiple device, it is characterised in that institute
The covering stated, upper sandwich layer waveguide, the material of lower sandwich layer waveguide are polymeric material.
4. a kind of three-dimensional perpendicular as claimed in claim 1 couples optical mode conversion-isolation multiple device, it is characterised in that institute
The length of the multiple device stated is 1000 μm -3000 μm.
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Cited By (3)
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| CN108196340A (en) * | 2018-01-10 | 2018-06-22 | 南京邮电大学 | A kind of three dimensional pattern based on multiple-mode interfence coupling converts beam splitter |
| CN108761637A (en) * | 2018-06-12 | 2018-11-06 | 南京邮电大学 | 3-dimensional multi-layered waveguide mode multiplexing and demultiplexer and preparation method |
| CN115857098A (en) * | 2023-03-02 | 2023-03-28 | 北京航空航天大学 | Optical circulator on silicon substrate |
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| CN115857098A (en) * | 2023-03-02 | 2023-03-28 | 北京航空航天大学 | Optical circulator on silicon substrate |
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