CN1893334A - Polymer micro-resonance-ring wave-dividing multiplexer and preparing method therefor - Google Patents
Polymer micro-resonance-ring wave-dividing multiplexer and preparing method therefor Download PDFInfo
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- CN1893334A CN1893334A CNA2005100169326A CN200510016932A CN1893334A CN 1893334 A CN1893334 A CN 1893334A CN A2005100169326 A CNA2005100169326 A CN A2005100169326A CN 200510016932 A CN200510016932 A CN 200510016932A CN 1893334 A CN1893334 A CN 1893334A
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- straight wave
- wave guide
- resonant ring
- miniature resonant
- spin coating
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Abstract
The new type wavelength division multiplexer of vertical coupled between resonant ring in minisize and straight wave-guide includes parts and procedures: the multiplexer includes silicon substrate, low cladding, input and output straight wave-guides, buffer layer, and resonant ring in minisize; spin coating polymeric material on silicon substrate to prepare low cladding; spin coating one layer of low cladding again; etching grooves of input straight wave-guide and output straight wave-guide; spin coating core layer of input straight wave-guide and output straight wave-guide; spin coating buffer layer; spin coating material of core layer of resonant ring; aluminum plating through vacuum sputter, coating photoresist, and a serial operations of exposing, developing, reactive ion etching and corrosion for removing aluminum. Features are: low wastage, good resolution in centered wavelength 1.55 micro with 0.8nm-5.6nm-wavelength interval, good light stability of heat, high integrity etc.
Description
Technical field:
The invention belongs to the optical communication passive device, relate to a kind of miniature resonant ring of polymer and vertical coupled novel wavelength division multiplexer of straight wave guide that adopts guide technology to make.
Background technology:
The preferred option that the countries in the world fiber optic network that dense wave division multipurpose (DWDM) technology has comprised China because of its high speed, high-capacity optical fiber transmission have become is built had obtained significant progress in recent years, had obtained using widely.Development along with DWDM, demand to various optic communication devices is also more and more higher, and wavelength division multiplexer commonly used at present has angle dispersion type (as grating and prism), interfere type (as film filter type and Mach-Zahnder filtering type) and waveguide grating type (AWG).The grating type wavelength division multiplexer has good wavelength selectivity, but insert loss big, to temperature and Polarization-Sensitive, the light path bandwidth is undesirable.But the stable miniaturized device of DTF interfere type filter implementation structure strengthens but the insertion loss increases with multiplexing path.
The miniature resonant ring is the device architecture that developed recently gets up, and can be used as filter, modulator, laser etc. at optical-fiber network.In recent years, with the miniature resonant ring be the research of optical device of basic functional units simple in structure because of it, be convenient to make, help integrated, the interest low, characteristics have attracted more and more optoelectronic areas scientific workers such as output is smooth of crosstalking of photoelectricity, in the world its primary element as extensive integrated electro sub-loop is launched further investigation and discussion to its theory and technology.Miniature resonant ring wavelength division multiplexer does not appear in the newspapers as yet in China.
Summary of the invention:
For solve wavelength division multiplexer in the background technology insert loss big, to temperature and Polarization-Sensitive, technical problem such as the light path bandwidth is undesirable, the present invention adopts the different refractivity polymer as channel and little ring waveguide sandwich layer and clad material making fiber waveguide, and the present invention will provide a kind of polymer multi-channel miniature resonant ring wavelength division multiplexer and manufacture craft technology thereof.
Device of the present invention comprises: silicon substrate 1, channel waveguide under-clad layer 2, input straight wave guide 3, straight wave guide output 4, resilient coating 5, miniature resonant ring 6, spin coating has channel waveguide under-clad layer 2 on silicon substrate 1, input straight wave guide 3 and straight wave guide output 4 are arranged on the body of channel waveguide under-clad layer 2, and input straight wave guide 3 is vertical mutually with straight wave guide output 4, resilient coating 5 is arranged on channel waveguide under-clad layer 2, miniature resonant ring 6 is arranged on resilient coating 5, and miniature resonant ring 6 is tangent with input straight wave guide 3 and straight wave guide output 4.Straight wave guide output 4 and miniature resonant ring 6 adopt respectively N (N=1,2 ... .N), the radius of miniature resonant ring 6 is respectively R
1, R
2... R
n, n=1,2,3...N, the semidiameter of adjacent miniature resonant ring 6 are Δ R.The width of input straight wave guide 3, straight wave guide output 4, miniature resonant ring 6 may be selected to be 1 μ m-2.5 μ m, thickness is 0.5 μ m-2.5 μ m.The thickness of channel waveguide under-clad layer 2 may be selected to be 6 μ m-10 μ m.The thickness of resilient coating 5 may be selected to be 0.4 μ m-1 μ m.
Demultiplexing of the present invention and multiplex process are: the complex signal light that contains different wave length is after the port input of input straight wave guide and be coupled into the miniature resonant ring of different radii, have only the light of a wavelength to satisfy condition of resonance and cause resonance in each miniature resonant ring, the resonance light wavelength is also inequality in the miniature resonant ring of different radii, thereby it is also different to be coupled into the light wavelength that has maximum output intensity behind the different straight wave guide outputs, thereby finished the demultiplexing function.Otherwise, be coupled into the miniature resonant ring resonance of different radii from the flashlight of the port of straight wave guide output input different wave length after, the output light that is coupled into again behind the input straight wave guide is the complex light of these wavelength, thereby has finished multiplexing function.
Processing step of the present invention is as follows:
A. to the silicon substrate clean, spin on polymers material on silicon substrate cured under 60 ° C--100 ℃ 0.5 hour-1.5 hours, made the channel waveguide under-clad layer;
B. with steps A spin coating one deck channel waveguide under-clad layer once more, 100 ℃ of-150 ℃ of following baked and cured 1 hour-3 hours;
C. vacuum sputtering is aluminized on the channel waveguide under-clad layer that step B forms, and resist coating and post bake adopt the exposure of negativity mask plate, the groove that develop, reactive ion etching carves input straight wave guide and straight wave guide output;
D. the sandwich layer of spin coating input straight wave guide and straight wave guide output on the structure that step C forms, in 100 ℃ of-150 ℃ of following baked and cured 1 hour-3 hours, reactive ion etching, the sandwich layer on the aluminium mask layer etches away fully, and aluminium is removed in corrosion then;
E. with step D spin coating resilient coating;
F. with the core material of step e spin coating miniature resonant ring;
G. aluminize at the step F vacuum sputtering, resist coating and post bake again, aluminium is removed in the exposure of positivity mask plate, development, reactive ion etching, corrosion, finishes element manufacturing.
The advantage of invention:
The invention solves in the prior art structural design in the wavelength division multiplexer, material is selected and the problem of manufacture craft.
The present invention is the wavelength division multiplexer of the brand new of the polymeric material of a kind of employing with lot of superiority.The present invention adopts miniature resonant ring and input straight wave guide and straight wave guide output vertical coupled structure in Different Plane, partial wave of the present invention is functional, wavelength interval Δ λ is in the 0.8nm-5.6nm scope near center output wavelength 1.55 μ m, adopt polymeric material to have advantages such as low, the hot good light stability of loss, the easy adjustment of refractive index, utilize aluminium mask and reactive ion etching technology, make device technology simple and with low cost.Solved wavelength division multiplexer in the background technology insert loss big, to temperature and Polarization-Sensitive, technical problem such as the light path bandwidth is undesirable, the size of encapsulated device is in 1 square centimeter of scope, so little device improved integrated level greatly, have insert that loss is little, the advantage such as little of crosstalking between delivery channel, be a kind of well behaved miniature resonant ring wavelength division multiplexer structure, be applicable to the wavelength-division multiplex technique of modern optical communication systems.
Description of drawings:
Fig. 1 is a device architecture principle schematic of the present invention
Fig. 2 is a partial wave cellular construction of device of the present invention figure
Fig. 3 is a cross sectional representation of importing straight wave guide 3 or straight wave guide output 4 and miniature resonant ring in the partial wave unit
Embodiment:
Contrast accompanying drawing description of the preferred embodiment of the present invention will make the above and other advantage of the present invention and characteristic clearer below.
Structure of the present invention comprises silicon substrate 1, channel waveguide under-clad layer 2, input straight wave guide 3, straight wave guide output 4, resilient coating 5, miniature resonant ring 6; Channel waveguide under-clad layer 2, input straight wave guide 3, straight wave guide output 4, resilient coating 5 and miniature resonant ring 6 adopt polymeric material; Straight wave guide output 4 and miniature resonant ring 6 adopt N=8 respectively, and the radius of miniature resonant ring 6 is respectively R
1, R
2... R
8, n=1,2,3...8, the semidiameter of adjacent miniature resonant ring 6 may be selected to be 0.1 μ m or 0.3 μ m or 0.5 μ m for Δ R.The width a of input straight wave guide 3, straight wave guide output 4, miniature resonant ring 6 may be selected to be 1 μ m or 1.5 or 2.5 μ m; The degree of depth b of input straight wave guide 3 and straight wave guide output 4
1Be 1 μ m or 1.5 μ m or 2 μ m; The degree of depth b of miniature resonant ring 6
2Be 1 μ m or 1.5 μ m or 2 μ m.The thickness h of channel waveguide under-clad layer 2 may be selected to be 6 μ m or 7 μ m or 10 μ m.The thickness d of resilient coating 5 may be selected to be 0.4 μ m or 0.8 μ m or 2 μ m.
At first 1 spin coating one deck channel waveguide under-clad layer 2 on silicon substrate cured under 60 ℃ or 80 ℃ or 100 ℃ 0.5 hour or 1 hour or 1.5 hours; Spin coating one deck channel waveguide under-clad layer once more, 100 ℃ or 120 ℃ or 150 ℃ of following baked and cured 1 hour or 2 hours or 3 hours, channel waveguide under-clad layer 2 thickness h are greater than 6 μ m, be intended to reduce leakage losses, utilize aluminium mask technique and reactive ion etching technology to carry out photoetching and fiber waveguide making, produce the input straight wave guide 3 of square crossing, the groove of straight wave guide output 4, spin coating input straight wave guide 3, the sandwich layer of straight wave guide output 4,100 ℃ or 130 ℃ or 150 ℃ of following baked and cured 1 hour or 2 hours or 3 hours, input straight wave guide 3, the sandwich layer of straight wave guide output 4 and miniature resonant ring 6 uses its refractive index of commaterial to be n
1, channel waveguide under-clad layer 2 and resilient coating 5 material refractive indexes are n
2, polymeric material can be selected PMMA, CYTOP, BCB etc., adjusts polymers compositions and makes it have different refractive indexes.The upper limiting layer of miniature resonant ring 6 is an air, and its refractive index is n
3=1 (n
2＞n
1＞n
3).Another resilient coating 5 of spin coating on this square crossing input straight wave guide 3 and straight wave guide output 4 planes, for reaching desirable coupling efficiency, these resilient coating 5 thickness d should remain in the 2 μ m (d among Fig. 3).Miniature resonant ring 6 places on this resilient coating 5, and tangent with corresponding input straight wave guide 3 and straight wave guide output 4 respectively.The radius R of miniature resonant ring 6-1 in eight miniature resonant rings 6
1' between 10 μ m--100 μ m, promptly may be selected to be 10 μ m or, 20 μ m or 30 μ m or 50 μ m or 80 μ m or 100 μ m etc., miniature resonant ring 6-2, miniature resonant ring 6-3, miniature resonant ring 6-4, miniature resonant ring 6-5, miniature resonant ring 6-6, miniature resonant ring 6-7, the radius of miniature resonant ring 6-8 is respectively R
2... R
8, R
2=R
1+ Δ R; R
3=R
1+ 2 Δ R; ... R
8=R
1+ (8-1) Δ R.The semidiameter of adjacent miniature resonant ring 6 can be according to selected polymeric material and partial wave range delta lambda and fabrication process condition decision for Δ R, and Δ R can be chosen between the 0.1 μ m-0.5 μ m, is 0.1 μ m or 0.2 μ m or 0.3 μ m or 0.4 μ m or 0.5 μ m.The manufacture craft of miniature resonant ring 6 is identical with straight wave guide output 4 with input straight wave guide 3.
Be appreciated that to the change of the foregoing description and revise for those skilled in the art be clear and expect among.Therefore, should regard top detailed description as example rather than restriction, be appreciated that following claim, comprise that all equivalents should determine the spirit and scope of the invention.
Claims (4)
1, the miniature resonant ring wavelength division multiplexer of polymer, it is characterized in that comprising: silicon substrate (1), channel waveguide under-clad layer (2), input straight wave guide (3), straight wave guide output (4), resilient coating (5), miniature resonant ring (6), spin coating has channel waveguide under-clad layer (2) on silicon substrate (1), input straight wave guide (3) and straight wave guide output (4) are arranged on the body of channel waveguide under-clad layer (2), and input straight wave guide (3) is vertical mutually with straight wave guide output (4), resilient coating (5) is arranged on channel waveguide under-clad layer (2), miniature resonant ring (6) is arranged on resilient coating (5), and miniature resonant ring (6) is tangent with input straight wave guide (3) and straight wave guide output (4).
2, the miniature resonant ring wavelength division multiplexer of polymer according to claim 1 is characterized in that: straight wave guide output (4) and miniature resonant ring (6) adopt N respectively, and the radius of miniature resonant ring (6) is respectively R
1, R
2... R
n, the semidiameter of adjacent miniature resonant ring (6) is Δ R.
3, the miniature resonant ring wavelength division multiplexer of polymer according to claim 1 is characterized in that: the width of input straight wave guide (3), straight wave guide output (4), miniature resonant ring (6) may be selected to be 1 μ m-2.5 μ m, thickness is 0.5 μ m-2.5 μ m; The thickness of channel waveguide under-clad layer (2) may be selected to be 6 μ m-10 μ m; The thickness of resilient coating 5 may be selected to be 0.4 μ m-2 μ m.
4, the preparation method of the miniature resonant ring wavelength division multiplexer of polymer, processing step is as follows:
A. to the silicon substrate clean, spin on polymers material on silicon substrate, at 60 ℃--cured 0.5 hour-1.5 hours under 100 ℃, make the channel waveguide under-clad layer;
B. with steps A spin coating one deck channel waveguide under-clad layer once more, 100 ℃ of-150 ℃ of following baked and cured 1 hour-3 hours;
C. vacuum sputtering is aluminized on the channel waveguide under-clad layer that step B forms, and resist coating and post bake adopt the exposure of negativity mask plate, the groove that develop, reactive ion etching carves input straight wave guide and straight wave guide output;
D. the sandwich layer of spin coating input straight wave guide and straight wave guide output on the structure that step C forms, in 100 ℃ of-150 ℃ of following baked and cured 1 hour-3 hours, reactive ion etching, the sandwich layer on the aluminium mask layer etches away fully, and aluminium is removed in corrosion then;
E. with step D spin coating resilient coating;
F. with the core material of step e spin coating miniature resonant ring;
G. aluminize at the step F vacuum sputtering, resist coating and post bake again, aluminium is removed in the exposure of positivity mask plate, development, reactive ion etching, corrosion, finishes element manufacturing.
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|---|---|---|---|
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464205C (en) * | 2007-10-18 | 2009-02-25 | 中国科学院长春光学精密机械与物理研究所 | Micro-resonance loop channel elect optic switch |
| CN102074881A (en) * | 2010-12-20 | 2011-05-25 | 北京交通大学 | Multi-wavelength fiber laser with miniature resonant cavity structures |
| US8270360B2 (en) | 2007-11-30 | 2012-09-18 | Zte Corporation | Method for indicating modulation mode in high speed downlink packet accessing |
| CN106842422A (en) * | 2017-04-14 | 2017-06-13 | 吉林大学 | A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device |
| CN108802907A (en) * | 2017-04-26 | 2018-11-13 | 华为技术有限公司 | A kind of reconfigurable optical add/drop multiplexer |
| CN109541745A (en) * | 2018-12-14 | 2019-03-29 | 电子科技大学 | A kind of follow-on micro-ring resonator in coupled zone and preparation method thereof |
| CN110174781A (en) * | 2019-05-06 | 2019-08-27 | 吉林师范大学 | A kind of reticular structure micro-loop electro-optical switch array device |
| CN110221458A (en) * | 2019-05-06 | 2019-09-10 | 吉林师范大学 | A kind of micro-loop electro-optical switch array device with wavelength conversion characteristics |
-
2005
- 2005-07-01 CN CNA2005100169326A patent/CN1893334A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464205C (en) * | 2007-10-18 | 2009-02-25 | 中国科学院长春光学精密机械与物理研究所 | Micro-resonance loop channel elect optic switch |
| US8270360B2 (en) | 2007-11-30 | 2012-09-18 | Zte Corporation | Method for indicating modulation mode in high speed downlink packet accessing |
| CN102074881A (en) * | 2010-12-20 | 2011-05-25 | 北京交通大学 | Multi-wavelength fiber laser with miniature resonant cavity structures |
| CN106842422A (en) * | 2017-04-14 | 2017-06-13 | 吉林大学 | A kind of three-dimensional perpendicular coupling optical mode conversion isolation multiple device |
| CN108802907A (en) * | 2017-04-26 | 2018-11-13 | 华为技术有限公司 | A kind of reconfigurable optical add/drop multiplexer |
| US10924200B2 (en) | 2017-04-26 | 2021-02-16 | Huawei Technologies Co., Ltd. | Reconfigurable optical add/drop multiplexer |
| CN109541745A (en) * | 2018-12-14 | 2019-03-29 | 电子科技大学 | A kind of follow-on micro-ring resonator in coupled zone and preparation method thereof |
| CN109541745B (en) * | 2018-12-14 | 2020-08-11 | 电子科技大学 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
| CN110174781A (en) * | 2019-05-06 | 2019-08-27 | 吉林师范大学 | A kind of reticular structure micro-loop electro-optical switch array device |
| CN110221458A (en) * | 2019-05-06 | 2019-09-10 | 吉林师范大学 | A kind of micro-loop electro-optical switch array device with wavelength conversion characteristics |
| CN110221458B (en) * | 2019-05-06 | 2023-03-21 | 吉林师范大学 | Micro-ring electro-optical switch array device with wavelength conversion characteristic |
| CN110174781B (en) * | 2019-05-06 | 2023-04-28 | 吉林师范大学 | Micro-ring electro-optical switch array device with net structure |
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