CN111916998A - Distributed feedback laser based on W3 photonic crystal defect waveguide and preparation method thereof - Google Patents
Distributed feedback laser based on W3 photonic crystal defect waveguide and preparation method thereof Download PDFInfo
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Abstract
The embodiment of the invention provides a distributed feedback laser based on a W3 photonic crystal defect waveguide and a preparation method thereof, wherein the distributed feedback laser comprises a P electrode, a P doped layer, a quantum well active layer, an N doped layer and an N electrode; the active photonic crystal waveguide layer comprises two micropore waveguide arrays which are distributed on two sides of the P electrode, each micropore is formed by arranging a plurality of micropores according to a preset array structure, each micropore penetrates through the P doping layer, the quantum well active layer and the N doping layer and is cut off on the upper surface of the substrate; and 3 columns of micropores in the two-dimensional pattern structure are removed along the direction of the photonic crystal defect waveguide to form the W3 photonic crystal defect waveguide. According to the embodiment of the invention, the slow light effect generated by coupling the forward wave and the backward wave in the W3 photonic crystal defect waveguide is utilized to design the ultrashort laser resonant cavity, so that the volume of a chip can be reduced, the cost of a device can be reduced, and the integratable performance of the chip can be improved.
Description
Technical Field
The invention relates to the field of integrated optoelectronic devices, in particular to a distributed feedback laser based on a W3 photonic crystal defect waveguide and a preparation method thereof.
Background
Distributed feedback lasers (DFB-LDs) are lasers that build bragg gratings in semiconductor lasers, relying on the mode selection principle of the gratings to obtain a specific lasing wavelength. The grating of the DFB laser is distributed in the resonant cavity of the whole laser, and the optical wave can obtain gain while feeding back. DFB-LDs can be generally classified into two types: gain coupling, which involves patterning a grating structure into the active region such that the gain of the active region varies periodically, and index coupling, which produces a feedback effect on the optical mode in the laser cavity. In the latter, a grating structure is engraved above an active region, and a feedback effect is generated on a light guide mode of a laser cavity through the action of an evanescent field of the light guide mode in the active region. However, the gain-coupled DFB-LD has a complicated manufacturing process, high manufacturing cost, and a low yield. So that the refractive index coupling of a uniform grating is mainly adopted at present, and a III-V semiconductor material is generally used as an active layer of a multi-quantum well structure. The DFB laser has the greatest characteristics of excellent monochromaticity (namely spectral purity), the line width of the DFB laser can be generally within 1MHz, and the DFB laser has very high Side Mode Suppression Ratio (SMSR) which can be up to more than 40-50 dB. The DFB-LD chip is a core device of the current 10G and 100G optical fiber communication networks, enterprise Ethernet, cloud computing centers and fifth generation mobile communication networks, and is a universal ideal light source of information transmission carriers in high-speed optical fiber transmission networks at home and abroad at present.
The DFB-LD chip can be widely applied to the fields of optical fiber communication, tunable semiconductor laser absorption spectroscopy technology including component detection, medical treatment, atmospheric measurement, environmental measurement, atomic spectroscopy including atomic clocks and magnetometers, precision measurement, night vision devices, isotope detection and the like due to good monochromaticity.
However, the DFB-LD chip has a problem at present: the size is large, which is not favorable for chip integration, and the device cost is high due to the large size.
Disclosure of Invention
Aiming at the problems in the prior art, the embodiment of the invention provides a distributed feedback laser based on a W3 photonic crystal defect waveguide and a preparation method thereof.
Specifically, the embodiment of the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a distributed feedback laser, including: the quantum well transistor comprises a P electrode, a P doping layer, a quantum well active layer, an N doping layer, a substrate and an N electrode which are sequentially arranged from top to bottom;
the P doping layer, the quantum well active layer and the N doping layer form an active photonic crystal waveguide layer;
the active photonic crystal waveguide layer comprises two micropore waveguide arrays, each micropore waveguide array is formed by arranging a plurality of micropores according to a preset array structure, each micropore penetrates through the P doping layer, the quantum well active layer and the N doping layer and is cut off on the upper surface of the substrate;
the two micropore waveguide arrays are distributed on two sides of the P electrode; wherein the position of the P electrode is arranged above the photonic crystal waveguide layer without micropores;
the two-dimensional planar photonic crystal forms a photonic forbidden band to form a linear defect photonic crystal waveguide;
and removing 3 rows of micropores in the two-dimensional pattern structure along the linear defect photonic crystal waveguide direction to obtain the W3 photonic crystal defect waveguide.
Further, the predetermined array structure at least includes a triangular lattice structure or a tetragonal lattice structure.
Further, the cross-sectional shape of the micro-pores at least includes a circle, an ellipse, a regular polygon or a rectangle.
Further, in each micro-hole waveguide array, the shape and size of each micro-hole are the same, and the lattice period between adjacent micro-holes at the periphery of each micro-hole is the same.
Further, the depth of the micropores exceeds 500 nm.
Further, the radius of the micropores is 80-180 nm.
Furthermore, the micropore waveguide arrays on two sides of the P electrode form a photonic crystal slow light waveguide structure ultra-short cavity, and the length of the photonic crystal slow light waveguide structure ultra-short cavity is less than 100 mu m.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a distributed feedback laser according to the first aspect, including:
growing SiO on substrate sheet containing quantum well or quantum dot by utilizing vapor deposition PECVD method2A layer;
in SiO2Coating electron beam glue on the surface of the layer;
preparing a mask pattern of the micropore waveguide array on the electron beam adhesive by using an electron beam exposure method;
etching the formed mask pattern to SiO by ICP dry etching technique2On the layer;
removing the etching residual electron beam glue to complete mask pattern transfer and SiO2Preparing a hard mask;
performing ICP dry etching again to realize etching of the P doping layer, the N doping layer, the quantum well active layer and the micropore waveguide array to obtain an active photonic crystal waveguide containing quantum wells or quantum dots, wherein the micropore waveguide array in the photonic crystal waveguide is formed by arranging micropores according to a preset array structure;
removing 3 rows of micropores in the two-dimensional graph structure along the direction of the photonic crystal defect waveguide to obtain a W3 photonic crystal defect waveguide;
removal of SiO2And preparing a P electrode on one side of the P doping layer far away from the quantum well active layer, and preparing an N electrode on one side of the N doping layer far away from the quantum well active layer.
As can be seen from the above technical solutions, in the distributed feedback laser based on the W3 photonic crystal defect waveguide and the manufacturing method thereof provided in the embodiments of the present invention, two sides of the P electrode are respectively provided with a micro-hole waveguide array, the micro-hole waveguide array is formed by a plurality of micro-holes arranged according to a first preset arrangement structure, and each micro-hole penetrates through the P doping layer, the quantum well active layer, and the N doping layer and is cut off on the upper surface of the substrate. Therefore, the embodiment of the invention forms the two-dimensional flat photonic crystal by designing the deep etching air micropore structure, generates the photonic band gap, introduces the defect into the complete photonic crystal, and utilizes the photonic band gap to limit the light to be transmitted in the defect to form the linear defect photonic crystal waveguide. The embodiment of the invention utilizes the abnormal dispersion in the W3 photonic crystal defect waveguide to ensure that the waveguide has special optical gain characteristics, the slow light effect generated by the defect mode in the photonic band gap can increase the optical gain of unit transmission distance, and the laser lasing condition that the gain exceeds the loss is easy to realize, thereby shortening the resonant cavity structure of the traditional DFB-LD laser. In the W3 photonic crystal defect waveguide, because a plurality of waveguide modes such as forward waves and backward waves exist in the photonic crystal defect waveguide with a wide W3 width, the forward waves and the backward waves with the same symmetry are strongly coupled at the frequency of energy band crossing, so that dispersion curves at the original intersection point are split and form a flat area, and a slow light effect is generated, namely, light repeatedly oscillates forward and backward in the transmission direction. The advantage of this embodiment is that the width of the defect waveguide is increased, the photonic crystal waveguide generates a micro-gap effect due to the coupling of the fundamental mode and the high-order mode, and a slow region of the fundamental mode exists. The transmission spectrum of the waveguide of this embodiment produces a filtering characteristic of a micro-bandgap. Compared with other frequency bands, the slow light obviously enhances the optical gain, a gain double peak is generated on the gain spectrum of the waveguide, and in addition, the regulation and control of the gain spectrum can be realized by designing the dispersion relation of the photonic crystal waveguide. The embodiment of the invention designs and shortens the resonant cavity structure of the traditional DFB-LD laser chip by utilizing the photonic crystal slow light effect, and can reduce the volume of the DFB-LD laser chip by more than one time, so that wafers with the same size can produce DFB-LD laser chips with the number more than one time, and the device cost can be reduced. In addition, the DFB-LD laser chip is easier to integrate in the later period by the embodiment of the invention, so that the design and the preparation of an active photoelectric device with more complex process and more functions are realized. Therefore, the embodiment of the invention designs the ultrashort laser resonant cavity by utilizing the slow light effect of the photonic crystal, thereby reducing the volume of the chip, further reducing the cost of the device and improving the integratable performance of the chip.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a top view of a distributed feedback laser based on a W3 photonic crystal defect waveguide according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a distributed feedback laser based on a W3 photonic crystal defect waveguide according to an embodiment of the present invention;
fig. 3 is a schematic three-dimensional perspective view of a distributed feedback laser based on a W3 photonic crystal defect waveguide according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an active photonic crystal waveguide structure fabricated in accordance with one embodiment of the present invention;
FIG. 5 is a top view of a distributed feedback laser without 3 columns of micro holes removed according to an embodiment of the present invention;
fig. 6 is a cross-sectional view of a distributed feedback laser without 3 rows of micro holes removed according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 shows a top view of a distributed feedback laser based on a W3 photonic crystal defect waveguide provided by an embodiment of the present invention; fig. 2 shows a cross-sectional view of a distributed feedback laser based on a W3 photonic crystal defect waveguide provided by an embodiment of the present invention. Fig. 3 shows a three-dimensional perspective view of a distributed feedback laser based on a W3 photonic crystal defect waveguide provided by an embodiment of the present invention. As shown in fig. 1, fig. 2 and fig. 3, the distributed feedback laser provided in this embodiment includes: the quantum well light-emitting diode comprises a P electrode 9, a P doping layer 8, a quantum well active layer 3, an N doping layer 5, a substrate 6 and an N electrode 7 which are sequentially arranged from top to bottom;
the P doping layer 8, the quantum well active layer 3 and the N doping layer 5 form an active photonic crystal waveguide layer 1; the active photonic crystal waveguide layer 1 comprises two micropore waveguide arrays 4, each micropore waveguide array 4 is formed by arranging a plurality of micropores 2 according to a preset array structure, and each micropore 2 penetrates through the P doping layer 8, the quantum well active layer 3 and the N doping layer 5 and is cut off on the upper surface of the substrate 6;
the two micropore waveguide arrays 4 are distributed on two sides of the P electrode 9; the position of the P electrode is arranged above the photonic crystal waveguide layer without the micropores, and the P electrode cannot be deposited in the micropores on two sides;
the micro-holes 2 in the two micro-hole waveguide arrays 4 form a two-dimensional graph structure, the two-dimensional graph structure forms a two-dimensional flat photonic crystal, and the two-dimensional flat photonic crystal generates a photon forbidden band to form a linear defect photonic crystal waveguide;
and removing 3 rows of micropores in the two-dimensional pattern structure along the linear defect photonic crystal waveguide direction to obtain the W3 photonic crystal defect waveguide.
As shown in fig. 5 and fig. 6, the distributed feedback laser provided in this embodiment includes an active photonic crystal waveguide layer 1, where the active photonic crystal waveguide layer 1 includes two micro-hole waveguide arrays 4, and all micro-holes 2 in the micro-hole waveguide arrays 4 penetrate through a P-doped layer 8, a quantum well active layer 3, and an N-doped layer 5. All the micro-holes 2 in the micro-hole waveguide array 4 have the same specific cross-sectional shape, and the embodiment is exemplified by the circular shape shown in fig. 1. All the micropores 2 are arranged into a two-dimensional graph structure according to the structural parameters designed by the corresponding output wavelength of the laser, and the embodiment takes the triangular lattice shown in fig. 1 as an example, that is, in the two-dimensional graph structure, all the micropores 2 are arranged in an array, and the radiuses of all the micropores 2 are the same, and the lattice periods of the micropores adjacent to the periphery of the micropores 2 are the same, so that all the micropores 2 integrally form a rectangular micropore waveguide array 4 on the active photonic crystal waveguide layer 1, the long side length range of the micropore is 5-100 μm, the short side length range of the micropore is 2-50 μm, and no photonic crystal hole is arranged in the region where the P electrode 9 is located.
In the embodiment, the micropores are combined and arranged into a special two-dimensional pattern structure, the sizes and the arrangement of the micropores design different structures, lengths, periods and structural parameters according to the working wavelength of the DFB-LD chip, and the arrangement structure comprises but is not limited to a triangular lattice structure or a tetragonal lattice structure.
In this embodiment, it should be noted that the number of rows of micropores arranged on both sides of the P electrode 9 is generally more than 4 rows, so as to ensure that a sufficient periodic structure forms a photonic band gap.
It is understood that the specific cross-sectional shape of the micro-holes 2 described above may include a circle, an ellipse, a regular polygon or a rectangle, etc. Correspondingly, the structural parameters of the micro-pores 2 include inner diameter, major axis length, minor axis length, rotation angle or side length. The corresponding specific two-dimensional shape of the micropore waveguide array 4 is a rectangle and comprises different lengths of long sides and short sides, the radius of an inner photonic crystal hole and a lattice period.
In the P doping layer 8 of this embodiment, the total thickness of the quantum well active layer 3, the N doping layer 5, and the substrate 6 exceeds 1 micron, the metal P electrode 9 is deposited above the P doping layer 8, and the P electrode 9 is located above the photonic crystal waveguide region where no micro-hole 2 is etched, that is, the area except for two micro-hole waveguide arrays 4 on the plane of the active photonic crystal waveguide layer 1, the P electrode 9 cannot be deposited in the micro-hole 2 on both sides, the length of the P electrode 9 is less than 100 microns, and the width is related to the radius and the lattice period of the micro-hole 2 in the micro-hole waveguide array 4.
On the basis of fig. 5 and fig. 6, the present embodiment needs to perform an operation of removing 3 columns of micro holes, as shown in fig. 1, fig. 2 and fig. 3, in addition to providing two micro hole waveguide arrays 4 in the active photonic crystal waveguide layer 1, the present embodiment further removes 3 columns of micro holes in the two-dimensional pattern structure along the line defect photonic crystal waveguide direction, so as to obtain a W3 photonic crystal defect waveguide.
It should be noted that, in this embodiment, a part of rows of micro holes are removed on the basis of the original micro hole waveguide array 4, that is, the number of rows is reduced by 3 rows compared to the original number, and meanwhile, the corresponding electrode width can be increased, thereby obtaining the defective waveguide of this embodiment. The photonic crystal waveguide has the advantages that the photonic crystal waveguide generates a micro-gap effect due to the coupling of the fundamental mode and the high-order mode, and a slow light region of the fundamental mode exists. The transmission spectrum of the waveguide of this embodiment produces a filtering characteristic of a micro-bandgap. Compared with other frequency bands, the slow light obviously enhances the optical gain, a gain double peak is generated on the gain spectrum of the waveguide, and the gain spectrum can be regulated and controlled by designing the dispersion relation of the photonic crystal waveguide.
As can be seen from the above technical solutions, in the distributed feedback laser provided in the embodiments of the present invention, two sides of the P electrode are respectively provided with a micro-hole waveguide array, the micro-hole waveguide array is formed by a plurality of micro-holes arranged according to a first preset arrangement structure, and each micro-hole penetrates through the P doping layer, the quantum well active layer, and the N doping layer and is cut off on the upper surface of the substrate. Therefore, the embodiment of the invention forms the two-dimensional flat photonic crystal by designing the deep etching air micropore structure, generates the photonic band gap, introduces the defect into the complete photonic crystal, and utilizes the photonic band gap to limit the light to be transmitted in the defect to form the linear defect photonic crystal waveguide. Therefore, the defect is introduced into the complete photonic crystal, and the photon forbidden band is utilized to limit light to propagate in the defect, so that the linear defect photonic crystal waveguide is formed. The embodiment of the invention utilizes the abnormal dispersion in the photonic crystal waveguide to enable the photonic crystal waveguide to have special optical gain characteristics, the slow light effect generated by a defect mode in a photonic band gap can increase the optical gain of unit transmission distance, and the laser lasing condition that the gain exceeds the loss is easy to realize, so that the resonant cavity structure of the traditional DFB-LD laser can be shortened. In addition, the embodiment of the invention utilizes the abnormal dispersion in the photonic crystal waveguide to enable the photonic crystal waveguide to have special optical gain characteristics, the slow light effect generated by the defect mode in the photonic band gap can increase the optical gain of unit transmission distance, and the laser lasing condition that the gain exceeds the loss is easy to realize, so that the resonant cavity structure of the traditional DFB-LD laser can be shortened. In addition, on the basis, the embodiment of the invention further reduces the formation of W3 photonic crystal defect waveguides by 3 rows of micropores on the basis of the original micropore waveguide array, and because the waveguide obtained by the processing has larger width and a plurality of waveguide modes, the forward wave and the backward wave are strongly coupled, so that the dispersion curve at the original intersection point is split and forms a flat area, and further, a slow light effect is generated, namely, light repeatedly oscillates forwards and backwards in the transmission direction. The photonic crystal waveguide has the advantages that the photonic crystal waveguide generates a micro-gap effect due to the coupling of the fundamental mode and the high-order mode, and a slow light region of the fundamental mode exists. The transmission spectrum of the waveguide of this embodiment produces a filtering characteristic of a micro-bandgap. Compared with other frequency bands, the slow light obviously enhances the optical gain, a gain double peak is generated on the gain spectrum of the waveguide, and in addition, the regulation and control of the gain spectrum can be realized by designing the dispersion relation of the photonic crystal waveguide. In the embodiment, the photonic crystal slow light effect design is utilized to shorten the resonant cavity structure of the traditional DFB-LD laser chip, so that the volume of the DFB-LD laser chip can be reduced by more than one time, and therefore, wafers with the same size can produce DFB-LD laser chips with the number more than one time, and the device cost can be reduced. In addition, the DFB-LD laser chip is easier to integrate in the later period by the embodiment, so that the design and the preparation of an active photoelectric device with more complex process and more functions are realized. Therefore, the ultrashort laser resonant cavity is designed by utilizing the slow light effect of the photonic crystal, so that the volume of a chip can be reduced, the cost of a device can be reduced, and the integration performance of the chip can be improved.
Based on the contents of the above embodiments, in the present embodiment, the depth of the micro-pores exceeds 500 nm.
In this embodiment, it should be noted that the longitudinal confinement of the optical field depends on the refractive index difference between the P-doped layer, the quantum well active layer, and the N-doped layer, so that the optical field distribution in the longitudinal direction exceeds 500nm, and the effective local area and regulation of the optical field can be realized only when the optical field distribution exceeds 500 nm.
Based on the contents of the above embodiments, in the present embodiment, the radius of the micro-pores is 80 to 180 nm.
In this embodiment, it should be noted that, for the laser of 1550nm communication band, the radius is 80-180nm to achieve effective band gap limitation and slow light enhancement effect.
Based on the content of the above embodiment, in this embodiment, the micro-pore waveguide arrays on both sides of the P electrode form a photonic crystal slow light waveguide structure ultrashort cavity, and the length of the photonic crystal slow light waveguide structure ultrashort cavity is less than 100 μm.
In this embodiment, it should be noted that the cavity length of the conventional DFB laser is over 200 μm, and the cavity length of this embodiment can be controlled below 100 μm, so that the cavity length can be reduced by at least half, and the yield can be improved by at least one time.
The ultra-short cavity photonic crystal DFB-LD provided by this embodiment forms a two-dimensional slab photonic crystal by a specially designed deep etching air hole structure, generates a photonic band gap, introduces defects into the complete photonic crystal, and utilizes the photonic band gap to confine light to propagate in the defects, thereby forming a line defect photonic crystal waveguide. The photonic crystal waveguide has special optical gain characteristics by utilizing abnormal dispersion in the photonic crystal waveguide, the optical gain of unit transmission distance can be increased by utilizing slow light effect generated by a defect mode in a photonic band gap, and laser lasing condition that the gain exceeds loss is easy to realize, so that the resonant cavity structure of the traditional DFB-LD laser can be shortened.
Fig. 4 shows an active photonic crystal waveguide structure actually fabricated according to the above example. According to the preparation process, the deep etching of the InP-based photonic crystal air holes 2 with the depth of more than 1 micron (the radius of the air holes 2 is about 100 nm) is successfully realized, and the InP-based active photonic crystal waveguide with the depth-to-width ratio of more than 14 is obtained.
Another embodiment of the present invention provides a method for manufacturing a distributed feedback laser as provided in the above embodiments, the method including the following processes:
step 101: growing SiO on substrate sheet containing quantum well or quantum dot by utilizing vapor deposition PECVD method2A layer;
step 102: in SiO2Coating electron beam glue on the surface of the layer;
step 103: preparing a mask pattern of the micropore waveguide array on the electron beam adhesive by using an electron beam exposure method;
step 104: etching the formed mask pattern to SiO by ICP dry etching technique2On the layer;
step 105: removing the etching residual electron beam glue to complete mask pattern transfer and SiO2Preparing a hard mask;
step 106: and performing ICP dry etching again to realize etching of the P doping layer, the N doping layer, the quantum well active layer and the micropore waveguide array to obtain an active photonic crystal waveguide containing quantum wells or quantum dots, wherein the micropore waveguide array in the photonic crystal waveguide is formed by arranging micropores according to a preset array structure, as shown in figures 5 and 6, removing 3 rows of micropores in the two-dimensional graph structure along the defect photonic crystal waveguide direction to obtain a W3 photonic crystal defect waveguide, as shown in figures 1 and 2.
Step 107: removal of SiO2And preparing a P electrode on one side of the P doping layer far away from the quantum well active layer, and preparing an N electrode on one side of the N doping layer far away from the quantum well active layer.
In this embodiment, the quantum well active layer may be a quantum well active layer of InGaAsP material.
In the distributed feedback laser provided by the embodiment, the whole photonic crystal active waveguide structure preparation process is carried out on a III-V semiconductor epitaxial wafer containing a quantum well active region.
Specifically, the growth mode comprises the following steps: growing SiO with the thickness of 200-300nm on an InP substrate by utilizing the PECVD technology2A layer; in SiO2Is thrown with about 200nm thick electron beam glue Zep 520A; benefit toMaking a mask pattern on the electron beam adhesive by using an electron beam exposure method; etching the formed electron beam resist mask pattern to SiO by using ICP dry etching technology2On the layer; removing the electron beam glue remained in the last step of etching to complete pattern transfer and SiO2Preparing a hard mask; performing ICP dry etching again to realize etching of the P doping layer 8 and the N doping layer 5 of the InP material and the quantum well active layer 3 of the InGaAsP material, so as to prepare an InP photonic crystal waveguide containing a quantum well active region, wherein the micropore waveguide array 4 in the waveguide is formed by regularly arranging micropores 2; removal of SiO2A layer; and finally, preparing the N electrode 7 and the P electrode 9 by processes of thinning, sputtering and the like. In this embodiment, it should be noted that when 3 rows of micro holes in the two-dimensional pattern structure need to be removed along the direction of the line defect photonic crystal waveguide, a defect waveguide of the W3 photonic crystal is obtained.
The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the embodiment of the present invention. One of ordinary skill in the art can understand and implement it without inventive effort.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions may be embodied in the form of a software product, which can be stored in a computer-readable storage medium such as ROM/RAM, magnetic disk, optical disk, etc., and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the methods described in the embodiments or some parts of the embodiments.
Moreover, in the present invention, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Furthermore, in the present disclosure, reference to the description of the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. A distributed feedback laser based on a W3 photonic crystal defect waveguide, comprising: the quantum well transistor comprises a P electrode, a P doping layer, a quantum well active layer, an N doping layer, a substrate and an N electrode which are sequentially arranged from top to bottom;
the P doping layer, the quantum well active layer and the N doping layer form an active photonic crystal waveguide layer;
the active photonic crystal waveguide layer comprises two micropore waveguide arrays, each micropore waveguide array is formed by arranging a plurality of micropores according to a preset array structure, each micropore penetrates through the P doping layer, the quantum well active layer and the N doping layer and is cut off on the upper surface of the substrate;
the two micropore waveguide arrays are distributed on two sides of the P electrode; wherein the position of the P electrode is arranged above the photonic crystal waveguide layer without micropores;
the two-dimensional planar photonic crystal generates a photonic forbidden band and forms a photonic crystal waveguide through line defects;
and removing 3 rows of micropores in the two-dimensional pattern structure along the linear defect photonic crystal waveguide direction to obtain the W3 photonic crystal defect waveguide.
2. The distributed feedback laser of claim 1, wherein the predetermined array structure comprises at least a triangular lattice structure or a tetragonal lattice structure.
3. A distributed feedback laser as claimed in claim 1 wherein said cross-sectional shape of said keyhole comprises at least a circle, an ellipse, a regular polygon or a rectangle.
4. A distributed feedback laser as claimed in claim 1 wherein, in each of the arrays of micro-hole waveguides, each of the micro-holes has the same shape and size and the same inter-lattice period as its neighboring micro-holes.
5. A distributed feedback laser as claimed in claim 1 wherein said microholes have a depth in excess of 500 nm.
6. A distributed feedback laser as claimed in claim 1 wherein said microholes have a radius of 80-180 nm.
7. The distributed feedback laser of claim 1, wherein the micro-hole waveguide arrays on both sides of the P-electrode form a photonic crystal slow light waveguide structure ultrashort cavity, the length of the photonic crystal slow light waveguide structure ultrashort cavity is less than 100 μm.
8. A method of fabricating a distributed feedback laser as claimed in any of claims 1 to 7, comprising:
growing SiO on substrate sheet containing quantum well or quantum dot by utilizing vapor deposition PECVD method2A layer;
in SiO2Coating electron beam glue on the surface of the layer;
preparing a mask pattern of the micropore waveguide array on the electron beam adhesive by using an electron beam exposure method;
etching the formed mask pattern to SiO by ICP dry etching technique2On the layer;
removing the etching residual electron beam glue to complete mask pattern transfer and SiO2Preparing a hard mask;
performing ICP dry etching again to realize etching of the P doping layer, the N doping layer, the quantum well active layer and the micropore waveguide array to obtain an active photonic crystal waveguide containing quantum wells or quantum dots, wherein the micropore waveguide array in the photonic crystal waveguide is formed by arranging micropores according to a preset array structure;
removing 3 rows of micropores in the two-dimensional graph structure along the direction of the photonic crystal defect waveguide to obtain a W3 photonic crystal defect waveguide;
removal of SiO2And preparing a P electrode on one side of the P doping layer far away from the quantum well active layer, and preparing an N electrode on one side of the N doping layer far away from the quantum well active layer.
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