CN108539578B - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
- Publication number
- CN108539578B CN108539578B CN201810510712.6A CN201810510712A CN108539578B CN 108539578 B CN108539578 B CN 108539578B CN 201810510712 A CN201810510712 A CN 201810510712A CN 108539578 B CN108539578 B CN 108539578B
- Authority
- CN
- China
- Prior art keywords
- layer
- ducting
- thickness
- semiconductor laser
- ducting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application is suitable for field of laser device technology, provide a kind of semiconductor laser, buffer layer, N-type limiting layer, lower limit layer, the lower waveguide layer, multiple quantum wells that the semiconductor laser includes: substrate, is equipped with from the bottom to top on substrate, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer, it is equipped at least two layers extension ducting layer between the buffer layer and the N-type limiting layer, improves coupling efficiency while vertical divergence angle can be reduced by the application.
Description
Technical field
The application belongs to field of laser device technology more particularly to a kind of semiconductor laser.
Background technique
With the rapid growth of the digital communication demand characterized by internet, global optical communication industry is taken over the past few years
Rapid development was obtained, and the requirement for optical transceiver cell is also higher and higher.If using high efficiency laser chip and
Aspheric lens packages so will result in the rising of cost；It is higher in order to obtain if reducing packaging cost using globe lens
Fiber optical power just needs to develop narrow angle of divergence chip of laser out.
Currently, the chip of laser that the coaxial component for using microsphere lens to encapsulate uses is InGaAsP (InGaAsP) material
The structure for expecting buried heterostructure uses the narrow angle of divergence to work.However, its complex process, coupling efficiency are relatively low.
Summary of the invention
In view of this, the embodiment of the present application provides a kind of semiconductor laser, while to reduce vertical divergence angle also
Improve coupling efficiency.
The embodiment of the present application provides a kind of semiconductor laser, comprising:
Substrate, the buffer layer being equipped with from the bottom to top on substrate, N-type limiting layer, lower limit layer, lower waveguide layer, Multiple-quantum
Trap, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer, the buffer layer and N-type limitation
At least two layers extension ducting layer is equipped between layer.
Further, upper extension ducting layer and lower expansion are equipped between the buffer layer and the N-type limiting layer from the bottom to top
Open up ducting layer.
Further, separation layer is equipped between the upper extension ducting layer and the lower extension ducting layer.
Further, the lower extension ducting layer is N-type InGaAlAs material, and the separation layer is N-type InP material, institute
Stating extension ducting layer is N-type InGaAlAs material.
Further, the lower extension ducting layer with a thickness of 0.1 μm~0.2 μm, the separation layer with a thickness of 0.4 μm
~0.8 μm, it is described it is upper extension ducting layer with a thickness of 0.1 μm~0.2 μm.
Further, the lower extension ducting layer with a thickness of 0.15 μm, the separation layer with a thickness of 0.6 μm, it is described
It is upper extension ducting layer with a thickness of 0.12 μm.
Further, the longitudinal middle part of the corrosion barrier layer is arranged in the p-type limiting layer and the contact electrode layer
Ridge waveguide is constituted, the width of the ridge waveguide is 2.5um, depth 1.8um.
Further, the lower waveguide layer with a thickness of 0.05 μm~0.15 μm, the upper ducting layer with a thickness of 0.05 μ
M~0.15 μm, the distance between the upper extension ducting layer and the multiple quantum wells are 1 μm~2 μm.
Further, the lower waveguide layer with a thickness of 0.1 μm, the upper ducting layer with a thickness of 0.1 μm, the upper expansion
Opening up the distance between ducting layer and the multiple quantum wells is 1.4 μm.
Further, the lower waveguide layer, the multiple quantum wells and the upper ducting layer are all made of undoped
AlGaInAs material, the lower limit layer use N-type AlGaInAs material.
The embodiment of the present application is designed using unilateral twin-guide prolongation structure, by the light field that generates multiple quantum wells from lower wave
Region in region between conducting shell and upper ducting layer, between extension a part to upper extension ducting layer and lower extension ducting layer
In, play the role of extension near field hot spot to reduce the far field vertical divergence angle of laser and improves coupling efficiency.
The upper extension ducting layer and lower extension ducting layer use InGaAlAs material, due to the height folding of InGaAlAs material
Rate characteristic is penetrated, the consistency of the semiconductor laser chip angle of divergence is improved, improves chip yield；InGaAlAs material bodies
System, additionally it is possible to improve internal electron limitation, improve characteristic when hot operation, without increasing refrigerator, be more suitable for non-brake method
Work.
The design structure of ridge waveguide replace traditional buried heterostructure structure, technical process simplify, reduce chip manufacturing at
Sheet and raising chip yield.
Detailed description of the invention
It in order to more clearly explain the technical solutions in the embodiments of the present application, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some of the application
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of semiconductor laser provided by the embodiments of the present application；
In the accompanying drawings: 1, substrate, 2, buffer layer, 3, lower extension ducting layer, 4, separation layer, 5, upper extension ducting layer, 6, N-type
Limiting layer, 7, lower limit layer, 8, lower waveguide layer, 9, multiple quantum wells, 10, upper ducting layer, 11, upper limiting layer, 12, corrosion blocking
Layer, 13, p-type limiting layer, 14, contact electrode layer.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, so as to provide a thorough understanding of the present application embodiment.However, it will be clear to one skilled in the art that there is no these specific
The application also may be implemented in the other embodiments of details.
It should be appreciated that ought use in this specification and in the appended claims, term " includes " instruction is described special
Sign, entirety, step, operation, the presence of element and/or component, but be not precluded one or more of the other feature, entirety, step,
Operation, the presence or addition of element, component and/or its set.
It is also understood that mesh of the term used in this present specification merely for the sake of description specific embodiment
And be not intended to limit the application.As present specification and it is used in the attached claims, unless on
Other situations are hereafter clearly indicated, otherwise " one " of singular, "one" and "the" are intended to include plural form.
It will be further appreciated that the term "and/or" used in present specification and the appended claims is
Refer to any combination and all possible combinations of one or more of associated item listed, and including these combinations.
In order to illustrate technical solution described herein, the following is a description of specific embodiments.
As a kind of semiconductor laser for originally declaring offer, which may include:
Substrate (1), the buffer layer (2) being equipped with from the bottom to top on substrate (1), N-type limiting layer (6), lower limit layer (7),
Lower waveguide layer (8), multiple quantum wells (9), upper ducting layer (10), upper limiting layer (11), corrosion barrier layer (12), p-type limiting layer
(13) and contact electrode layer (14), which is characterized in that at least two are equipped between the buffer layer (2) and the N-type limiting layer (6)
Layer extension ducting layer.
The embodiment of the present application is extended light field by the way that two layers of extension ducting layer is arranged between buffer layer and N-type limiting layer
To the region, play the role of extending near field hot spot, to reduce the far-field divergence angle of semiconductor laser, improves coupling effect
Rate.
Fig. 1 is the structural schematic diagram of another semiconductor laser provided by the embodiments of the present application, this is partly led as shown in the figure
Body laser is set gradually from the bottom to top:
Substrate (1), for carrying out the growth of semiconductor laser layers of material, substrate in the embodiment of the present application on it
(1) the InP material in N-type (100) face is used, the InP material in N-type (100) face can be conducive to the injection of electronics, reduce lining
The series resistance of bottom material can be improved the transformation efficiency of semiconductor laser.
Buffer layer (2) is produced on substrate (1), and buffer layer (2) uses N-type InP material, the material one with substrate (1)
Cause, it is therefore an objective to form the epitaxial surface of high quality, reduce the stress of substrate (1) and other each layers, the defect of elimination substrate (1) to
The propagation of other each layers, the growth of the material of other each layers conducive to device, finally formed epitaxial material crystal quality is good, defect
It is few,.
Lower extension ducting layer (3), using N-type InGaAlAs material, the lower extension ducting layer (3) is using with higher
The N-type InGaAlAs material of refractive index, the light field that multiple quantum wells (9) can be made to generate extension one from upper extension ducting layer (5)
Play the role of extending near field hot spot, to reduce the far-field divergence angle of laser into lower extension ducting layer (3) in part.
Separation layer (4) can be separated lower extension waveguide (3) and upper extension ducting layer (5) using N-type InP material,
Light field widens.In practical application, separation layer (4) can also be using the material for being conducive to reduction dislocation.
Upper extension ducting layer (5), using N-type InGaAlAs material, the upper extension ducting layer uses folding with higher
The N-type InGaAlAs material for penetrating rate can make the light field of multiple quantum wells (9) generation from lower waveguide layer (8) and upper ducting layer (10)
Between region in extension a part into upper extension ducting layer (5), play the role of extension near field hot spot, to reduce laser
The far-field divergence angle of device.
N-type limiting layer (6) can effectively hinder the diffusion and drift of electronics using N-type InP material, and limit light field
Extension of the transverse mode to the N-type limiting layer (6), to reduce the loss of light, i.e., reduction potential barrier, reduction voltage lose.
Lower limit layer (7) can effectively hinder the diffusion and drift of electronics using N-type AlGaInAs material, and limit
Extension of the light field transverse mode to the lower limit layer (7), to reduce the loss of light, i.e., reduction potential barrier, reduction voltage lose.
Lower waveguide layer (8) can reinforce the limitation to light field using undoped AlGaInAs material.
Multiple quantum wells (9) is made of 5 Quantum Well and 6 bases, using undoped AlGaInAs material, as laser
The active area of device provides enough gains of light, and determines the excitation wavelength of device and the service life of device.
Upper ducting layer (10) can reinforce the limitation to light field using undoped AlGaInAs material.
Upper limiting layer (11) can effectively hinder the diffusion and drift of electronics using p-type AlInAs material, and limit
Extension of the light field transverse mode to this layer, to reduce the loss of light, i.e., reduction potential barrier, reduction voltage lose.
Corrosion barrier layer (12) can play corruption in subsequent chips in etching technique using the InGaAsP material of p-type
Lose the effect stopped.
P-type limiting layer (13) can effectively hinder the diffusion and drift of electronics using the InP material of p-type, and limit
Extension of the light field transverse mode to this layer, to reduce the loss of light, i.e., reduction potential barrier, reduction voltage lose.
Contact electrode layer (14), using the p-type InGaAs material of heavy doping.Can in subsequent technology for preparing electrode with
Electrode material forms good Ohmic contact, to reduce series resistance, improves the transfer efficiency of device.
The p-type limiting layer (13) and the contact electrode layer (14) are arranged in the longitudinal direction of the corrosion barrier layer (12)
Portion constitutes ridge waveguide, and the width of the ridge waveguide is 2.5um, depth 1.8um.
It is described it is lower extension ducting layer (3) with a thickness of 0.1 μm~0.2 μm, for example, 0.12 μm, 0.14 μm, 0.16 μm,
0.18μm.The separation layer (4) with a thickness of 0.4 μm~0.8 μm, for example, 0.5 μm, 0.6 μm, 0.7 μm.The upper extension wave
Conducting shell (5) with a thickness of 0.1 μm~0.2 μm, for example, 0.12 μm, 0.14 μm, 0.16 μm, 0.18 μm.
As the another embodiment of the application, the thickness of lower extension ducting layer (3) can be 0.15 μm, the separation layer
(4) thickness can be 0.6 μm, and the thickness of upper extension ducting layer (5) can be 0.12 μm.
The lower waveguide layer (8) with a thickness of 0.05 μm~0.15 μm, the upper ducting layer (10) with a thickness of 0.05 μm
~0.15 μm, the distance between the upper extension ducting layer (5) and the multiple quantum wells (9) are 1 μm~2 μm.
As the another embodiment of the application, the lower waveguide layer (8) with a thickness of 0.1 μm, the upper ducting layer (10)
With a thickness of 0.1 μm, the distance between the upper extension ducting layer (5) and the multiple quantum wells (9) are 1.4 μm.
Table 1 is another semiconductor laser provided by the embodiments of the present application, and the sequence in table 1 from top to bottom is semiconductor
The sequence of laser from top to bottom, every a line in table 1 represent one layer and this layer of correspondence in semiconductor laser device epitaxial wafer
Material composition and thickness.
| Epitaxial layer serial number | Material component | Thickness (μm) |
| Contact electrode layer (14) | InGaAs | 0.2 |
| P-type limiting layer (13) | InP | 1.6 |
| Corrosion barrier layer (12) | InGaAsP | 0.02 |
| Upper limiting layer (11) | AlGaInAs | 0.1 |
| Upper ducting layer (10) | AlGaInAs | 0.1 |
| Multiple quantum wells (9) | AlGaInAs | |
| Lower waveguide layer (8) | AlGaInAs | 0.1 |
| Lower limit layer (7) | AlGaInAs | 0.1 |
| N-type limiting layer (6) | InP | 1.2 |
| Upper extension ducting layer (5) | InGaAlAs | 0.12 |
| Separation layer (4) | InP | 0.6 |
| Lower extension ducting layer (3) | InGaAlAs | 0.15 |
| Buffer layer (2) | InP | 0.5 |
| Substrate (1) | The InP in N-type (100) face |
Another semiconductor laser provided by the embodiments of the present application of table 1
The embodiment of the present application is designed using unilateral twin-guide prolongation structure, by the light field that generates multiple quantum wells from lower wave
Region in region between conducting shell and upper ducting layer, between extension a part to upper extension ducting layer and lower extension ducting layer
In, play the role of extension near field hot spot to reduce the far field vertical divergence angle of laser and improves coupling efficiency；It is described
Upper extension ducting layer and lower extension ducting layer are mentioned using InGaAlAs material due to the high refractive index characteristic of InGaAlAs material
The high consistency of the semiconductor laser chip angle of divergence, improves chip yield；InGaAlAs material system, additionally it is possible to mention
High internal electron limitation, improves characteristic when hot operation, without increasing refrigerator, is more suitable for non-brake method work；Ridge waveguide
Design structure replace traditional buried heterostructure structure, technical process simplify, reduce chip manufacturing cost and improve chip at
Product rate.
Also it should be noted is that, unilateral twin-guide prolongation structure is used in the embodiment of the present application, i.e., original
In region other than between upper ducting layer and lower waveguide layer, side (unilateral) expands (the upper extension of two ducting layers again wherein
Ducting layer and lower extension ducting layer), in practical application, can also between original upper ducting layer and lower waveguide layer other than area
In domain, in two sides, (bilateral) expands two ducting layers (above extending ducting layer and lower extension ducting layer) again.Expand in one side of substrate
The upper extension ducting layer and lower extension ducting layer of exhibition are located between buffer layer and the N-type limiting layer, are clicking contact layer side
The upper extension ducting layer and lower extension ducting layer of extension are between p-type limiting layer and contact electrode layer.Pass through bilateral twin-guide
The effect that prolongation structure can further function as extension near field hot spot mentions to reduce the far field vertical divergence angle of laser
The high effect of coupling efficiency.
Embodiment described above is only to illustrate the technical solution of the application, rather than its limitations；Although referring to aforementioned reality
Example is applied the application is described in detail, those skilled in the art should understand that: it still can be to aforementioned each
Technical solution documented by embodiment is modified or equivalent replacement of some of the technical features；And these are modified
Or replacement, the spirit and scope of each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution should all
Comprising within the scope of protection of this application.
Claims (8)
1. a kind of semiconductor laser, comprising: substrate, the buffer layer being equipped with from the bottom to top on substrate, N-type limiting layer, lower limit
Preparative layer, lower waveguide layer, multiple quantum wells, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer,
It is characterized in that, at least two layers extension ducting layer, the buffer layer and described is equipped between the buffer layer and the N-type limiting layer
Between N-type limiting layer from the bottom to top be equipped with upper extension ducting layer and lower extension ducting layer, the upper extension ducting layer and it is described under
Extend the separation layer being equipped between ducting layer for widening light field.
2. semiconductor laser as described in claim 1, which is characterized in that the lower extension ducting layer is N-type InGaAlAs
Material, the separation layer are N-type InP material, and the upper extension ducting layer is N-type InGaAlAs material.
3. semiconductor laser as described in claim 1, which is characterized in that it is described it is lower extension ducting layer with a thickness of 0.1 μm
~0.2 μm, the separation layer with a thickness of 0.4 μm~0.8 μm, it is described it is upper extension ducting layer with a thickness of 0.1 μm~0.2 μm.
4. semiconductor laser as claimed in claim 3, which is characterized in that it is described it is lower extension ducting layer with a thickness of 0.15 μ
M, the separation layer with a thickness of 0.6 μm, it is described it is upper extension ducting layer with a thickness of 0.12 μm.
5. semiconductor laser as described in claim 1, which is characterized in that the p-type limiting layer and the contact electrode layer
The longitudinal middle part that the corrosion barrier layer is arranged in constitutes ridge waveguide, and the width of the ridge waveguide is 2.5um, depth 1.8um.
6. semiconductor laser as described in claim 1, which is characterized in that the lower waveguide layer with a thickness of 0.05 μm~
0.15 μm, the upper ducting layer with a thickness of 0.05 μm~0.15 μm, between the upper extension ducting layer and the multiple quantum wells
Distance be 1 μm~2 μm.
7. semiconductor laser as claimed in claim 6, which is characterized in that the lower waveguide layer with a thickness of 0.1 μm, it is described
Upper ducting layer with a thickness of 0.1 μm, the distance between the upper extension ducting layer and the multiple quantum wells be 1.4 μm.
8. semiconductor laser as described in claim 1, which is characterized in that the lower waveguide layer, the multiple quantum wells and institute
It states ducting layer and is all made of undoped AlGaInAs material, the lower limit layer uses N-type AlGaInAs material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810510712.6A CN108539578B (en) | 2018-05-24 | 2018-05-24 | A kind of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810510712.6A CN108539578B (en) | 2018-05-24 | 2018-05-24 | A kind of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108539578A CN108539578A (en) | 2018-09-14 |
| CN108539578B true CN108539578B (en) | 2019-08-13 |
Family
ID=63471839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810510712.6A Active CN108539578B (en) | 2018-05-24 | 2018-05-24 | A kind of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108539578B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166108A (en) * | 2013-03-15 | 2013-06-19 | 中国科学院半导体研究所 | Edge-emitting crystal laser with circular spot output and low divergence angle and composite waveguide device |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN107732656A (en) * | 2017-10-26 | 2018-02-23 | 海南师范大学 | A kind of Low threshold small divergence angle 980nm semiconductor laser epitaxial structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI347717B (en) * | 2007-09-07 | 2011-08-21 | Univ Nat Chiao Tung | Structure of high power edge emission laser diode |
-
2018
- 2018-05-24 CN CN201810510712.6A patent/CN108539578B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166108A (en) * | 2013-03-15 | 2013-06-19 | 中国科学院半导体研究所 | Edge-emitting crystal laser with circular spot output and low divergence angle and composite waveguide device |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN107732656A (en) * | 2017-10-26 | 2018-02-23 | 海南师范大学 | A kind of Low threshold small divergence angle 980nm semiconductor laser epitaxial structures |
Non-Patent Citations (1)
| Title |
|---|
| Study on simulation of 1060 nm quantum-well lasers with double mode expansion layers;Wei Liu等;《2015 International Conference on Optoelectronics and Microelectronics (ICOM)》;20160204;第313页右栏II. Structure Design,第314页左栏最后一段-第315页右栏第1段、图1-7 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108539578A (en) | 2018-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102324696B (en) | Bragg refractive waveguide edge transmitting semiconductor laser with low horizontal divergence angle | |
| CN107710381B (en) | Methods and devices involving high confinement factor III-nitride edge-emitting laser diodes with lattice-matched cladding layers | |
| CN100574027C (en) | The high-power quantum-well laser of non-aluminum active district 808nm of unsymmetric structure | |
| Huang et al. | Defect characterization of InAs/InGaAs quantum dot pin photodetector grown on GaAs-on-V-grooved-Si substrate | |
| KR101550117B1 (en) | Photoelectric element and manufaturing method thereof | |
| CN103166108B (en) | Circle spot exports low divergence edge emitting photon crystal laser and composite waveguide device | |
| CN103457158A (en) | TM-polarization GaAsP/GaInP active-region 808nm quantum-well laser | |
| CN111129941B (en) | Silicon-based integrated laser chip flip-chip coupling structure | |
| US20180175585A1 (en) | Electrically pumped photonic crystal nanolaser | |
| CN103384046B (en) | A kind of Super-lattice waveguide semiconductor laser structure | |
| CN107093841A (en) | A kind of epitaxial structure of near-infrared VCSEL lasers and preparation method thereof | |
| Karandashev et al. | Indium arsenide-based spontaneous emission sources (review: a decade later) | |
| CN109768468A (en) | A kind of semiconductor laser | |
| CN104158086A (en) | Semiconductor luminescent device | |
| CN108899761A (en) | Asymmetric mode extends small divergence angle semiconductor laser | |
| CN108539578B (en) | A kind of semiconductor laser | |
| CN206864867U (en) | A kind of epitaxial structure of near-infrared VCSEL lasers | |
| JP2008521245A5 (en) | ||
| CN106300012A (en) | A kind of 808nm semiconductor laser containing high selective corrosion barrier layer | |
| CN106253055A (en) | A kind of electro-absorption laser based on lateral P I N structure and manufacture method thereof | |
| CN101841123A (en) | Semiconductor laser structure with reverse V-shaped coupling optical waveguide and small divergence angle | |
| CN105895754B (en) | A kind of production method of two pole piece piece of InGaAsP materials buried waveguide structure superradiation light-emitting | |
| CN103247936B (en) | Optical semiconductor device and method of manufacturing optical semiconductor device | |
| CN105406359B (en) | A kind of AlGaInP semiconductor laser containing highly selective corrosion barrier layer | |
| CN104242058A (en) | Aluminum-free semiconductor laser structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |