CN111082311B - Monolithic manufacturing structure of monolithic photonic integrated device - Google Patents

Monolithic manufacturing structure of monolithic photonic integrated device Download PDF

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CN111082311B
CN111082311B CN201911422971.4A CN201911422971A CN111082311B CN 111082311 B CN111082311 B CN 111082311B CN 201911422971 A CN201911422971 A CN 201911422971A CN 111082311 B CN111082311 B CN 111082311B
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integrated device
row
photonic
device unit
groove
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CN111082311A (en
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黄永光
朱洪亮
王宝军
张瑞康
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Abstract

The utility model provides a monolithic integrated photonic device monolithic fabrication structure, which comprises a plurality of rows of integrated device unit groups adjacently arranged, wherein each row of integrated device unit group comprises a plurality of integrated device units, each integrated device unit comprises two optical devices and an etching groove, and the two optical devices are connected in series through a ridge waveguide; the integrated device units in each row of integrated device unit groups are arranged in a staggered mode with adjacent rows, so that in the transverse direction, the ridge waveguides of one row of integrated device units are opposite to the etched grooves of the adjacent row of integrated device units, or the etched grooves of one row of integrated device units are opposite to the ridge waveguides of the adjacent row of integrated device units. The integral manufacturing structure abandons the traditional complex steps of bar splitting, racking, film coating and re-splitting test, realizes integral film coating and test screening of the photonic integrated device, and greatly reduces the manufacturing and test cost of the photonic integrated device; the interference of the reflected light of the bottom surface and the end surface of the integrated device unit on the online test data is reduced.

Description

Monolithic manufacturing structure of monolithic photonic integrated device
Technical Field
The disclosure relates to the technical field of design and manufacture of optoelectronic devices, in particular to a monolithic manufacturing structure of a monolithic photonic integrated device.
Background
The monolithic photonic integrated device is a key device in the fields of information transmission, artificial intelligence, ultra-computation sensing and the like. After the traditional photonic integrated device adopts the selective area epitaxy (SAG) or butt-joint coupling growth (BJG) epitaxy technology to complete the integration of active and active materials or active and passive materials, according to the manufacturing steps of the integrated device, waveguides are respectively engraved, respective electrodes are made, then the integrated device is cleaved into bars, the bars are orderly arranged on a coating jig and are installed in a high-vacuum electron beam evaporation device, an antireflection film is respectively evaporated at one end, a high-reflection dielectric film is respectively evaporated at the other end, and finally the coated bars are cleaved into single integrated device tube cores to be tested and screened.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
Based on the above problems, the present disclosure provides a monolithic photonic integrated device structure to alleviate the technical problems of the prior art, such as complicated manufacturing process, high manufacturing and testing costs, etc., of the photonic integrated device.
(II) technical scheme
The present disclosure provides a monolithic integrated photonic device fabrication structure, comprising: the integrated device unit groups are adjacently arranged in multiple columns, each integrated device unit group comprises multiple integrated device units, each integrated device unit comprises two optical devices and an etching groove, and the two optical devices are connected in series through ridge waveguides; the integrated device units in each row of integrated device unit groups are arranged in a staggered mode with adjacent rows, so that in the transverse direction, the ridge waveguides of one row of integrated device units are opposite to the etched grooves of the adjacent row of integrated device units, or the etched grooves of one row of integrated device units are opposite to the ridge waveguides of the adjacent row of integrated device units.
In the embodiment of the disclosure, the length of the etching groove of the integrated device unit is equal to the cavity length of each integrated device unit.
In the embodiment of the disclosure, the integrated device unit comprises a photonic integrated device composed of two active optical devices or a photonic integrated device composed of active and passive optical devices fabricated on any one substrate of InP, GaAs, GaN, SiC, AlN or ZnO.
In the embodiment of the disclosure, the length of the etching groove is 150-1000 microns, the width is 30-60 microns, and the depth is 4-5 microns.
In the embodiment of the disclosure, the depth of the etching groove is below an active layer of the photonic integrated device, the bottom of the etching groove is an antireflection bottom surface, and the side wall of the etching groove is a vertical mirror surface.
In the embodiment of the disclosure, the anti-reflection bottom surface of the etched groove bottom refers to an anti-reflection dense cone with a height of 50-100 nm at the groove bottom.
In the embodiment of the present disclosure, the two end faces of the etched groove perpendicular to the horizontal direction are the light-emitting end face and the backlight end face of the integrated device unit horizontally staggered left and right, the antireflection dielectric film is integrally evaporated on the light-emitting end face, and the high-reflection dielectric film is integrally evaporated on the backlight end face.
In the embodiment of the disclosure, the reflection coefficient of the antireflection dielectric film is 0.1% -2%, and the reflection coefficient of the high-reflection dielectric film is 75% -95%.
In the embodiment of the disclosure, the ridge waveguide is embedded in the double grooves of the planar layer of the photonic integrated device, and the width of the ridge waveguide is 1.5-8 microns; height 1.0-2.0 microns.
In the embodiment of the disclosure, the depth of the double groove is less than that of an active layer of the photonic integrated device; the length of the double grooves is equal to that of the integrated device unit, the width is 4-10 micrometers, the depth is 1.0-2.0 micrometers, and the height of the ridge waveguide is equal to that of the double grooves.
(III) advantageous effects
According to the technical scheme, the whole manufacturing structure of the monolithic photonic integrated device has at least one or one part of the following beneficial effects:
(1) the traditional complex steps of bar cleavage, racking coating and re-cleavage test are abandoned, the whole coating and test screening of the photonic integrated device are realized, and the manufacturing and test cost of the photonic integrated device is greatly reduced;
(2) the interference of the reflected light of the bottom surface and the end surface of the integrated device unit to the online test data is reduced;
(3) the coating inclination angle between the ion source of the coating equipment and the normal line of the end surface of the integrated device is reduced;
(4) the manufacturing density of the integrated device unit is improved;
(5) the ridge waveguide of the integrated device unit is well protected.
Drawings
FIG. 1 is a schematic top view of a monolithic photonic integrated device fabrication structure according to an embodiment of the present disclosure; the electro-absorption modulated laser (EML) is an integral manufacturing structure of the EML and consists of an electro-absorption modulator and a distributed feedback laser.
Fig. 2 is a schematic top view of two integrated device units, the electroabsorption modulated laser units, in two adjacent columns of fig. 1.
Fig. 3 is a schematic cross-sectional view of two integrated device units (laser segments) longitudinally cleaved along section line a-a' of fig. 1.
Fig. 4 is a schematic cross-sectional view of three integrated device units laterally cleaved along section line B-B' (intermediate the ridge waveguide) of fig. 1.
Fig. 5 is a schematic diagram illustrating the correlation between the inclination angle and the length and depth of the groove when the whole end surface of the monolithic photonic integrated device is coated according to the embodiment of the disclosure.
Fig. 6 is a schematic diagram illustrating a correlation between an emitted light quantity of a light receiving device and a groove length on a surface of a monolithic photonic integrated device by a surface detector according to an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-an integrated device unit; 2-etching a groove; 3-distributed feedback laser;
4-electroabsorption modulator; 5-ridge waveguide; 6-double groove; 7-light-emitting end face; 8-backlight end face;
9-antireflection bottom surface; 10-an active region; 11-electrode isolation trench; 12-orientation marking and encoding;
13-surface detector; 71-antireflection dielectric film; 81-high reflective dielectric film;
l-the length of the integrated device unit and the length of the etched groove; h-etching the depth of the groove;
h-etching depth of ridge waveguide; h1 — thickness of active light emitting layer to top layer;
theta-the inclination angle between the outgoing direction of the coated ion source and the normal direction of the end face;
θ 1-far field half divergence angle;
theta 2-the far-field light emission portion blocked by the ridge waveguide;
θ 3-the portion of far-field divergent light received by the surface detector.
Detailed Description
The utility model provides a monolithic integrated photonics integrated device whole piece preparation structure, its whole piece preparation structure is similar with face emission photonic integrated device, has abandoned traditional bar cleavage, the complicated step of racking coating film and cleavage test again completely, has realized the whole piece coating film of photonic integrated device and has tested the screening, greatly reduced the preparation of photonic integrated device and test cost.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, there is provided a monolithic integrated photonic device manufacturing structure, as shown in fig. 1, the monolithic integrated photonic device manufacturing structure including:
the integrated device unit groups are adjacently arranged in multiple columns, each integrated device unit group comprises multiple integrated device units, each integrated device unit comprises two optical devices and an etching groove, and the two optical devices are connected in series through ridge waveguides;
the integrated device units in each row of integrated device unit groups are arranged in a staggered mode with adjacent rows, so that in the transverse direction, the ridge waveguides of one row of integrated device units are opposite to the etched grooves of the adjacent row of integrated device units, or the etched grooves of one row of integrated device units are opposite to the ridge waveguides of the adjacent row of integrated device units.
The length of the etching groove of the integrated device unit is equal to the length of each integrated device unit cavity;
the ridge waveguide is embedded in the double grooves of the plane layer;
the length of the double grooves is equal to that of the integrated device unit, the width of the double grooves is 4-10 micrometers, and the depth of the double grooves is 1.0-2.0 micrometers; the depth of the double grooves is not as deep as the active layer of the photonic integrated device; the width of the ridge waveguide is 1.5-8 microns, and the height of the ridge waveguide is 1.0-2.0 microns, namely the ridge waveguide is equal to the depth of the double groove.
The integrated device unit comprises a photonic integrated device consisting of two active optical devices manufactured on InP, GaAs, GaN, SiC, A1N and ZnO substrates or a photonic integrated device consisting of active and passive optical devices. The active optical device comprises a laser, an electric absorption modulator, a semiconductor optical amplifier, a super-radiation diode, a mode-locked laser and other photonic devices; the laser comprises a Fabry-Perot cavity laser, a distributed feedback laser, a narrow linewidth laser, a wavelength-tunable laser and the like; the passive optical device comprises a spot size converter, an optical waveguide, an optical switch, an isolator and the like;
the etching groove has the length of 150-1000 microns, the width of 30-60 microns and the depth of 4-5 microns. The depth of the etched groove is below the active layer of the photonic integrated device, the bottom of the etched groove is an antireflection bottom surface, and the side wall of the etched groove is a vertical mirror surface. The bottom of the etched groove is an anti-reflection bottom surface, which means that the bottom of the groove is an anti-reflection dense cone with the height of 50-100 nanometers.
Setting the horizontal direction parallel to the cavity length of the integrated device unit as the transverse direction and the direction vertical to the cavity length as the longitudinal direction; the ridge waveguides which are transversely staggered into a row of integrated device units are opposite to the etching grooves of the other row, and the etching grooves of the integrated device units of the row are opposite to the ridge waveguides of the other row; the longitudinal staggered arrangement just divides the integrated device unit by etching the groove.
The two end faces of the etched groove, which are vertical to the horizontal direction, are the light-emitting end face and the backlight end face of the integrated device unit which are horizontally staggered left and right, the antireflection dielectric film is integrally evaporated on the light-emitting end face, and the high-reflection dielectric film is integrally evaporated on the backlight end face. The reflection coefficient of the antireflection dielectric film is 0.1% -2%, and the reflection coefficient of the high-reflection dielectric film is 75% -95%; an inclination angle is formed between the ion source emergent direction of the evaporation medium film equipment and the end surface normal of the integrated device unit.
The integrated device firstly cuts and cleaves the array strips of the integrated device units along the longitudinal direction, and then cuts and cleaves the photonic integrated device array strips in the etching grooves along the transverse direction to form the integrated device units.
In the disclosed embodiment, referring to fig. 1 to 6, in the drawings, 1 is an integrated device unit, 2 is an etched groove, 3 is a distributed feedback laser (DFB laser), 4 is an electro-absorption modulator (EA modulator), 5 is a ridge waveguide, 6 is a double groove, 7 is an etched light-emitting end surface, 8 is an etched backlight end surface, 9 is an anti-reflection bottom surface of the groove, 10 is an active region, 11 is an electrode isolation groove, 12 is a direction mark and code, 13 is a surface detector, 71 is a dielectric anti-reflection film, 81 is a highly reflective film, L is a length of the integrated device unit or the etched groove, H is a depth of the etched groove, H is an etched depth of the double groove or the ridge waveguide, H1 is a thickness from an active light-emitting layer to a top layer, θ is an inclination angle between an emission direction of a coated ion source and a normal line of an end surface direction, θ 1 is a half divergence angle, and θ 2 is a far field divergence portion blocked by the ridge waveguide, and theta 3 is the far-field divergent light part received by the surface detector. An Electroabsorption Modulated Laser (EML) is fabricated on an InP substrate and fig. 1 is a schematic top view of a monolithic fabrication structure using the present disclosure. The electroabsorption modulated laser is a monolithic photonic integrated device consisting of an electroabsorption modulator (EAM) and a Distributed Feedback (DFB) laser. Fig. 1 is a diagram of two types of integrated device units of the electroabsorption modulated laser shown in fig. 2, which only differ in the upward and downward patterns of the welding points of the two electrodes of the electroabsorption modulated laser.
The electro-absorption modulated laser consists of an active optical device DFB laser 3 and an EA modulator 4, an isolation groove 11 is arranged between the active optical device DFB laser 3 and the EA modulator 4, the DFB laser 3 is arranged on the left side of the isolation groove, and the EA modulator 4 is arranged on the right side of the isolation groove.
The structure for manufacturing the electric absorption modulation laser monolithic photonic integrated device shown in the figure 1 has the following characteristics:
the electroabsorption modulation laser integrated device unit 1 and the etching grooves 2 are arranged in a staggered way in the transverse direction and the longitudinal direction,
the length of the cavity of the electric absorption modulation laser integrated device unit 1 is equal to that of the etched groove 2, and both are L,
the ridge waveguide 5 of the electroabsorption modulated laser integrated device unit 1 is embedded in the double trench 6 of the epitaxial planar layer.
Wherein the etched groove 2 is a groove with the length of 150-1000 microns, the width of 30-60 microns and the depth of 4-5 microns, the depth H of the groove 2 is below the active layer 10 of the electro-absorption modulated laser, the bottom 9 of the groove 2 is an anti-reflection bottom surface, and the side wall is a vertical mirror surface. The anti-reflection bottom surfaces 9 of the grooves 2 have anti-reflection dense cones with a height of 50-100 nm, as shown in fig. 3 and 4.
Wherein the transverse direction refers to the horizontal direction parallel to the cavity length, and the longitudinal direction refers to the direction perpendicular to the cavity length; the ridge waveguides 5 transversely staggered into a row of integrated device units are opposite to the etching grooves 2 in the other row, and the etching grooves 2 in the row are opposite to the ridge waveguides 5 in the other row; the vertical staggered arrangement just divides the integrated device unit 1 by etching the grooves 2.
Wherein the ridge waveguide 5 of the integrated device unit 1 of the electroabsorption modulated laser is embedded between the double trenches 6, the double trenches 6 are shallow trenches with the length equal to that of the integrated device unit 1 of the electroabsorption modulated laser, the width of 4-10 microns and the depth of 1.0-2.0 microns, and the depth of the double trenches 6 is not as deep as the active layer 10 of the electroabsorption modulated laser; the width of the ridge waveguide 5 is 1.5-8 microns, and the height is the etching depth h of the double trench.
The etched groove 2 and two end faces perpendicular to the horizontal direction are respectively a light-emitting end face 7 and a backlight end face 8 of the electroabsorption modulation laser integrated device unit 1 which are horizontally staggered left and right, an antireflection dielectric film 71 is evaporated on the light-emitting end face 7, and a high-reflection dielectric film 81 is evaporated on the backlight end face 8. The reflection coefficient of the antireflection dielectric film 71 is 0.1% -2%, and the reflection coefficient of the high-reflection dielectric film 81 is 75% -95%; the ion source emergent direction of the evaporation medium film equipment and the end surface normal of the integrated device unit 1 have an inclination angle theta.
The electroabsorption modulation laser integrated device is firstly cut and cleaved along the longitudinal direction to form an array strip of an integrated device unit, and then the array strip of the integrated device is cut and cleaved along the transverse direction in the etching groove 2 to form the electroabsorption modulation laser integrated device unit 1.
In the integral production of the photonic integrated device, the ion source exit direction during end surface coating and the normal line of the end surface of the photonic integrated device are not parallel, but have an inclination angle θ as shown in fig. 5. As can be seen from fig. 5, the inclination angle θ is arctan (H/L) as a function of the depth H and the length L of the groove 2. The shallower the depth H of the groove 2 and the longer the length L, the smaller the included angle theta and the smaller the deviation from the normal end face coating condition. In the cross arrangement structure disclosed by the disclosure, the length of the groove 2 is consistent with the cavity length L of the electroabsorption modulation laser integrated device unit 1, and the maximum length is reached; and because the bottom of the groove 2 is provided with the antireflection bottom surface 9 of the antireflection cone, the depth H of the groove 2 only needs to reach 4-5 microns. Therefore, according to the photonic integrated device manufactured by the structure disclosed by the invention, the deviation of the inclination angle theta between the ion source emergent direction and the integrated device end surface normal line is very small when the whole end surface is coated, compared with the traditional parallel mode, so that the coating quality is easily ensured.
In the entire on-line automatic test of the integrated device, the relationship between the amount of light received by the surface detector 13 and the length L of the groove 2 is shown in fig. 6. The far-field vertical half divergence angle θ 1 of the integrated device unit is θ 2+ θ 3, and the portion θ 3 that can be received by the surface detector 13 is θ 1 — θ 2 θ 1 — arctan (h1/L), where h1 is the thickness from the active light emitting layer to the top layer of the ridge waveguide. For a given wafer and device structure, h1 and θ 1 are substantially fixed, then θ 3 is only related to the groove length L. The longer L, the larger θ 3, and the more optical information the surface detector 13 can receive. Therefore, the length L of the groove of the photonic integrated device manufactured according to the structure disclosed by the invention is consistent with the length of the unit cavity of the integrated device, the maximization is achieved, the quantity of optical information which can be received by the surface detector 13 is the largest, and the online test data is more accurate.
As a specific embodiment of the present disclosure, the electroabsorption modulated laser cavity length L is 250 microns and width is 300 microns. Wherein the DFB laser 3 is 150 microns long, the EA modulator 4 is 80 microns long, the electrode isolation trench 11 is 20 microns long; the length of the etched groove 2 is 250 micrometers, the width of the etched groove is 40 micrometers, and the depth of the etched groove is 4 micrometers; manufacturing a 60-nanometer dense cone antireflection bottom surface 9 at the bottom of the groove 2 by an oxygen-containing dry etching technology; a ridge waveguide 5 of the laser is embedded between the double grooves 6, and the double grooves 6 are 250 microns long, 7 microns wide and 1.8 microns deep; the ridge waveguide 5 has a top width of 3.3 microns (bottom neck width 1.5 microns), a height of 1.8 microns; evaporating 0.1% of antireflection dielectric film 71 on a light-emitting end face 7 indicated by an arrow 12 of an etched groove 2, and evaporating 90% of high-reflection dielectric film 81 on a backlight end face 8 at the other end of the etched groove 2; the inclination angle theta between the emission direction of the ion source of the evaporation medium film equipment and the normal line of the end face of the laser is 0.92 degrees (arctan (4/250)); the portion that can be received by the surface detector 13 is θ 3 — θ 1-arctan (h1/L) — θ 1-arctan (2.2/250) — θ 1-0.50 degrees. Where h1 is 2.2 microns, the thickness of the active light emitting layer to the top layer of the ridge waveguide metal. Therefore, the inclination angle theta between the ion source emergent direction of the coating equipment and the normal line of the end surface of the integrated device is only 0.92 degrees and is nearly parallel, so the influence is little; the angle of the optical information that can be received by the surface detector 13 is different from the vertical divergence half-angle of the integrated device by only 0.5 degree. And finally, longitudinally cleaving the whole manufacturing structure to obtain an array strip of the electroabsorption modulation laser unit, and transversely cleaving the array strip of the integrated device in the etching groove to obtain the electroabsorption modulation laser integrated device unit 1 with the size of 250 micrometers X300 micrometers.
Although the present disclosure has been described with respect to a monolithic structure for an electroabsorption modulated laser, the structure of the present disclosure is also applicable to integration of other active devices with active devices and passive devices, and is also applicable to monolithic structures for photonic integrated devices made of various semiconductor materials, such as GaAs, GaN, SiC, A1N, ZnO, and the like, as well as InP substrates.
The above description is only exemplary of the present disclosure and is not intended to limit the present disclosure, which is to be construed in any way as imposing limitations thereon, such as the appended claims, and any changes, equivalents, improvements and equivalents thereof, which fall within the true spirit and scope of the present disclosure.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize that the monolithic photonic integrated device of the present disclosure has a structure fabricated on a whole wafer.
In summary, the present disclosure provides a monolithic structure for manufacturing a monolithic photonic integrated device, in which multiple rows of integrated device unit groups are adjacently and alternately arranged, so that a ridge waveguide of an integrated device unit in each row of integrated device unit groups corresponds to an etched groove of an integrated device unit in an adjacent row of integrated device unit groups, thereby effectively reducing interference of reflected light from the opposite and bottom surfaces of the photonic integrated device on-line test characteristics, reducing an inclination angle between an ion source of a coating apparatus and a normal line of an end surface of the photonic integrated device, and protecting the ridge waveguide from damage. The traditional complex steps of bar cleavage, racking film coating and re-cleavage test are abandoned, the whole film coating and test screening of the photonic integrated device are realized, and the manufacturing and test cost of the photonic integrated device is greatly reduced.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (2)

1. A monolithic integrated photonic device fabrication structure, comprising:
the integrated device unit groups are adjacently arranged in multiple columns, each integrated device unit group comprises multiple integrated device units, each integrated device unit comprises two optical devices and an etching groove, and the two optical devices are connected in series through ridge waveguides;
the integrated device units in each row of integrated device unit groups are arranged in a staggered mode with adjacent rows, so that in the transverse direction, the ridge waveguides of one row of integrated device units are opposite to the etching grooves of the adjacent row of integrated device units, or the etching grooves of one row of integrated device units are opposite to the ridge waveguides of the adjacent row of integrated device units;
the integrated device unit comprises a photonic integrated device consisting of two active optical devices or a photonic integrated device consisting of active and passive optical devices, wherein the photonic integrated device is manufactured on any one substrate of InP, GaAs, GaN, SiC, AlN or ZnO;
wherein the ridge waveguide is embedded in the double trench of the planar layer; the length of the double grooves is equal to that of the integrated device unit, the width of the double grooves is 4-10 micrometers, and the depth of the double grooves is 1.0-2.0 micrometers; the depth of the double grooves is not as deep as the active layer of the photonic integrated device; the width of the ridge waveguide is 1.5-8 microns, and the height of the ridge waveguide is 1.0-2.0 microns;
the etching groove has the length of 150-1000 microns, the width of 30-60 microns and the depth of 4-5 microns; etching the groove to a depth below the active layer of the photonic integrated device, wherein the bottom of the etched groove is an antireflection bottom surface, and the side wall of the etched groove is a vertical mirror surface; the bottom of the etching groove is provided with an anti-reflection dense cone body with the height of 50-100 nanometers; the two end faces of the etched groove, which are vertical to the horizontal direction, are the light-emitting end face and the backlight end face of the integrated device unit which are horizontally staggered left and right, the antireflection dielectric film is integrally evaporated on the light-emitting end face, and the high-reflection dielectric film is integrally evaporated on the backlight end face.
2. The monolithic integrated photonic device fabrication structure of claim 1, wherein the reflection coefficient of the anti-reflective dielectric film is 0.1-2%, and the reflection coefficient of the highly reflective dielectric film is 75-95%.
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