CN105048282B - Single-chip integration electric pump Bragg reflection waveguide thz laser device - Google Patents
Single-chip integration electric pump Bragg reflection waveguide thz laser device Download PDFInfo
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Abstract
Single-chip integration electric pump Bragg reflection waveguide thz laser device, belongs to field of optoelectronic devices, and to solve the problems, such as that existing thz laser output exists, which uses Bragg reflection waveguiding structure in vertical direction, including：Two adjacent Distributed Bragg Reflection lasers, rear facet difference etching period and the slightly different distributed Bragg grating of duty ratio so that the output wavelength of two lasers has different；Y waveguide beam coupler, two input terminals of one side are connected respectively with above-mentioned two-laser, other end coupling outputting dual wavelength laser；Laser power amplifier is connected with the output terminal of Y waveguide, and power amplification is carried out to the dual-wavelength laser of injection；Passive Bragg reflection waveguide nonlinear frequency conversion part, is connected with the output terminal of laser power amplifier, makes two kinds of different wave length λ of injection1、λ2Laser generate difference frequency 1/ λ1‑1/λ2=1/ λ3, realize thz laser λ3Output.
Description
Technical field
Single-chip integration, electric pump Bragg reflection waveguide non-linear frequency the present invention relates to a kind of output of thz laser
Converted light source belongs to optoelectronic device technology field.
Background technology
Terahertz (THz) wave is often referred to electromagnetic wave of the frequency in 0.1THz-10THz (respective wavelength is 3mm-30 μm), it
There is boundless application prospect in fields such as structure of matter characterization, biomedicine, environmental monitoring, safety inspection and national defence.
THz wave can be generated by way of electronic technology or optical technology, but these methods cut both ways.Photoconductive antenna, finishing
The terahertz emission efficiency that the methods of stream, plasma oscillation and electronic non-linear transmission line generates is very low, the Terahertz of transmitting
Light beam mean power only has the order of magnitude of the nanowatt to microwatt.Terahertz free electron laser output power is very high, but its body
Product is very huge, involves great expense, it is difficult to realize commercialization.All solid state Terahertz quantum cascaded laser based on semiconductor has
The features such as energy conversion efficiency is low, small, light, cheap and frequency is adjustable, but the current operating temperature of this device is low
The shortcomings that (being less than 240K), seriously limits its application.In recent years, it is generated too based on nonlinear difference or parameter transform technology
Hertzion radiation source has made great progress, but pump light source (such as CO outside these method generally uses2、Nd:YAG and semiconductor
Laser etc.) it is injected into aeolotropic crystal (such as KTP, LiNbO3, PPLN etc.) in carry out nonlinear frequency conversion, volume compared with
Greatly, it also needs to increase the parts such as beam shaping system and speculum, systematic comparison is complicated, and needs accurate optics adjustment, no
It is suitable for mass production.III-V semi-conducting material such as GaAs/AlGaAs has very high nonlinear factor and wide transparent window,
It is very suitable for developing single chip integrated nonlinear frequency conversion light source, but it has big with reference to advanced semiconductor preparing process
Dispersion, it is difficult to realize phase matched, to solve the problems, such as this, people are humorous using birefringent phase matching, quasi-phase matched, high Q
The technologies such as chamber, photonic band gap structure, Cherenkov phase matcheds shake to realize nonlinear frequency conversion, but the light of these methods
It is not high to learn transfer efficiency, causes THz wave output power very low.
Bragg reflection waveguide is a kind of 1-D photon crystal with line defect, it is by upper lower Bragg reflector
(DBR) it is formed with center cavity, limits light field using photonic band gap effects, guided mode effective refractive index can be less than Bragg reflection wave
The low-index layer led, therefore there are two different photon band gap Guidance-Mechanisms for Bragg reflection waveguide.In Bragg reflection
In waveguide, the light wave of controllable different wave length is operated in different photon band gap guided modes, so as to fulfill complete phase matched, production
Raw high efficiency nonlinear frequency conversion.
University of Toronto by the use of Bragg reflection waveguide as nonlinear waveguide, using 1550nm wavelength and
The exterior laser source pumping of 1950nm wavelength, the tunable mid-infrared laser (Dylan of 7.9-8.9 mum wavelengths is realized by difference frequency
F.Logan,M.Giguere,A.Villeneuve,and Amr S.Helmy.Widely tunable mid-infrared
generation via frequency conversion in semiconductor waveguides[J].Optics
Letters.November 2013.Vol.38.No.21.pages 4457-4460.), but at present there has been no realize Terahertz to swash
The report of light, and this method needs to lead the optical coupling that external light source exports into Prague back wave using optical element
In, system complex, volume are larger, and its low coupling efficiency can reduce transfer efficiency.In addition, Chinese patent, application No. is
201110272765.7 entitled " Bragg refractive waveguide edge transmitting semiconductor laser with low horizontal divergence angle ", the semiconductor
Laser can realize the low cross angle of divergence, high brightness laser output using Bragg reflection waveguiding structure, but by terahertz wave band
Limiting for gain media itself, can not be directly applied to terahertz wave band, only realize laser output near infrared band at present.
Invention content
The present invention is individually used for nonlinear frequency conversion waveguide or semiconductor laser to solve Bragg reflection waveguide
Waveguide can not realize the problem of THz wave laser output, provide a kind of compact, single-chip integration electric pump Terahertz and swash
Light device.
In order to achieve the above object, technical scheme is as follows：
Single-chip integration electric pump Bragg reflection waveguide thz laser device, it is characterized in that, the epitaxial wafer of the laser is adopted
With BRL structures, it includes the first DBR-BRL, the 2nd DBR-BRL, Y waveguide, power amplifier and nonlinear waveguide, wherein：
First DBR-BRL and the 2nd DBR-BRL is two adjacent stripe lasers on monolithic, and be carved between the two every
From groove, distributed Bragg reflection optical grid DBR I and DBR II, the first DBR-BRL and the 2nd DBR-BRL are carved in surface respectively
Export narrow linewidth and different wave length λ1And λ2Laser；
The light of first DBR-BRL and the 2nd DBR-BRL outputs respectively enters two input terminals of Y waveguide, Y waveguide upper surface
With electric insulation layer I, the direct output dual wavelength λ of output terminal of Y waveguide1And λ2Laser；
The light of Y waveguide output is incident on power amplifier, and power amplifier is to the dual wavelength λ of entrance1And λ2Laser generates work(
Rate is amplified；
The light of power amplifier output is incident on nonlinear waveguide, and nonlinear waveguide upper surface has electric insulation layer II, profit
Phase matched is realized with Bragg reflection waveguide, makes two kinds of different wave length λ of injection1And λ2Laser generate difference frequency 1/ λ1-1/λ2
=1/ λ3, realize thz laser λ3Output.
First DBR-BRL and the 2nd DBR-BRL structure sheafs are identical, and are followed successively by substrate, N- coverings, N- from the bottom to top
DBR, defect layer, P-DBR, P- covering and P- cap rocks；N-DBR and P-DBR is by multipair high and low refractive index material periodicities group
Into the period logarithm of the two can differ；Defect layer refractive index is between the refractive index of the high low-index layer of N-DBR and P-DBR
Between, it is inserted into active area among it.
First DBR-BRL, the 2nd DBR-BRL and power amplifier three parts are respectively provided with P- electrodes I, P- electrodes II and P-
Electrode III, and deep isolated groove is carved between each electrode；First DBR-BRL and the 2nd DBR-BRL are operated in low current range,
Play seed laser injection, the Injection Current of the first DBR-BRL and the 2nd DBR-BRL can be changed respectively, adjust output wavelength
λ1And λ2, so as to fulfill the tunable of output thz laser wavelength；Power amplifier is operated in high current range, to injection
Two kinds of wavelength lasers play power amplification, and the power of thz laser is exported by adjusting its controlled current flow system.
The beneficial effects of the invention are as follows：
In the thz laser device of the present invention, all parts are that single-chip integration, an extension obtain, and device is electric pump
Mode, thus it is small-sized, compact-sized.The epitaxial structure of the laser replaces traditional be all-trans using Bragg reflection waveguide
Ejected wave guide structure carries out light limitation, it is operated in different photon band gap guided modes to have realized using fundamental frequency light and difference frequency light
All phase matches, so as to efficiently obtain thz laser output.This laser passes through in the first DBR-BRL and the 2nd DBR-
The grating of wavelength chirp is etched on BRL, realizes single-chip integration, dual-wavelength laser output, it can also be by controlling the first DBR- respectively
The Injection Current of BRL1 and the 2nd DBR-BRL2 change wavelength, realize tunable THz wave laser output.It is in addition, of the invention
Laser epitaxial direction uses Bragg reflection waveguiding structure, it has the spy that high-gain coefficient, big laser cavity, strong mode select
Property, the laser of exportable narrow beam divergence, so as to reduce application cost.In short, single-chip integration electric pump proposed by the present invention, wave
Long tunable and working and room temperature THz wave laser is more in material science, life science, information technology and national defense safety etc.
A field has very bright application prospect, is expected to promote the application progress in Terahertz field.
Description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the single-chip integration electric pump Bragg reflection waveguide thz laser device structure diagram of the present invention.
In figure：1st, the first DBR-BRL；2nd, the 2nd DBR-BRL；3rd, Y waveguide；4th, power amplifier；5th, nonlinear waveguide.
Fig. 2 is that the index distribution of single-chip integration electric pump Bragg reflection waveguide thz laser device epitaxial structure is illustrated
Figure.
In figure：A, substrate；B, N- coverings；c、N-DBR；D, defect layer；e、P-DBR；F, P- coverings；G, P- cap rocks.
Fig. 3 is that the Refractive Index of Material of the laser waveguide of embodiment 1 at different wavelengths is distributed and guided mode effective refractive index
Distribution.
Specific embodiment
As shown in Figure 1, single-chip integration electric pump Bragg reflection waveguide thz laser device, all parts are grown simultaneously
On the same substrate, epitaxial structure is followed successively by substrate, N- coverings, N-type Bragg mirror (N-DBR), defect from bottom to top
Layer, p-type Bragg mirror (P-DBR), P- coverings and P- cap rocks.Substrate is III-V compounds of group of N-type heavy doping, such as
GaAs, InP, GaSb or GaN etc..N- cladding indexs are usually less than the low-index material in N-DBR, to inhibit light field to
Substrate is revealed.N-DBR is by m to high refractive index CHWith low-index material CLPeriod alternating growth obtains.Defect layer is not mixed usually
Miscellaneous, active area is at its center, can be the gain materials such as single-layer or multi-layer Quantum Well, quantum dot.P-DBR is by n to low-refraction
Material ELWith high-index material EHPeriod alternating growth obtains, wherein EHAnd CHRefractive index it is identical with thickness, ELAnd CLFolding
It is identical with thickness to penetrate rate, the period, logarithm n and m may be the same or different.P- cladding indexs are usually less than ELMaterial, to limit light
Field is extended to heavy doping P- cap rocks.P- cap rocks are usually identical with substrate material, and heavy doping is in favor of Ohmic contact.
Single-chip integration electric pump Bragg reflection waveguide thz laser device, the epitaxial wafer of the laser use BRL structures,
Mainly by first the 1, second Distributed Bragg Reflection laser of Distributed Bragg Reflection laser (DBR-BRL) (DBR-
BRL) 2, Y waveguide 3, power amplifier 4 and nonlinear waveguide 5 form.Wherein：First DBR-BRL is carved on 1 surface I gratings of DBR,
Its period and duty ratio are respectively Λ1And f1, the frequency-selecting of DBR I, which acts on, makes laser output narrow line-width wavelengths λ1.2nd DBR-BRL
II gratings of DBR are carved on 2 surfaces, and period and duty ratio are respectively Λ2And f2, the frequency-selecting of DBR II, which acts on, makes laser export narrow line
Wide wavelength X2, II gratings of DBR and the slightly different (Λ of I gratings of DBR1≠Λ2Or f1≠f2), therefore two laser output wavelengths
λ1And λ2With different.The laser of first DBR-BRL 1 and the 2nd DBR-BRL2 outputs is defeated by two of Y waveguide 3 respectively
Enter end, be then coupled into beam of laser from other end output dual wavelength λ1And λ2Laser.Power amplifier 4 has certain length
Degree, is operated in high current range, in order to provide enough gains of light, enhancing output laser power.What power amplifier 4 exported swashs
It is optically coupled into nonlinear waveguide 5, in this waveguide, two beam different wave length λ of injection1And λ2Laser generate difference frequency, output
THz wave laser λ3.3 upper surface of Y waveguide has electric insulation layer I, and no power plays the role of optical coupling.Nonlinear waveguide (5)
Upper surface has electric insulation layer II, and no power plays the role of nonlinear frequency conversion.
It is carved with isolated groove (etched active area) between first DBR-BRL 1 and the 2nd DBR-BRL 2, two devices
Electrode P- electrodes I and P- electrodes II power up respectively, therefore the electric current I injectedⅠ、IⅡIt can control respectively, so as to make output laser wave
Long λ1、λ2It is tunable.Power amplifier 4 connects P- electrodes III, high current range is operated in, to the λ of injection1、λ2Wavelength laser
Play amplification.The front cavity surface and Y waveguide 3 of first DBR-BRL 1 and the 2nd DBR-BRL 2 and power amplifier 4 it is front and rear
Cavity surface is obtained by dry etching, this dry etching slot is very narrow and surface is smooth, can be sky among it to reduce coupling loss
The transparent planar material of gas, the electric insulating medium of growth filling or spin coating.In nonlinear waveguide 5, wavelength λ1、λ2Base
Frequency laser is operated in suppressed tunnel formula photon band gap pattern, and difference frequency terahertz wave λ3Laser work in Bradley case form photon
Band gap guided mode, therefore can realize phase-matching condition n1/λ1-n2/λ2=n3/λ3, so that it is guaranteed that efficient difference frequency is converted
Efficiency.
As shown in Fig. 2, the index distribution schematic diagram of the laser epitaxial structure, epitaxial structure are followed successively by lining from bottom to top
Bottom a, N- covering b, N-DBR c, defect layer d, P-DBR e, P- covering f and P- cap rocks g.N-DBR by n-type doping high refractive index
Layer CH, low-index layer CLPeriod alternating growth forms；The low-index layer E that P-DBR is adulterated by p-typeL, high refractive index layer EHWeek
Phase alternating growth forms；High refractive index layer CHAnd EHRefractive index be nH, thickness is identical；Low-index layer CLAnd ELRefractive index
It is nL, thickness is identical；The refractive index n of defect layer ddMore than low-index layer refractive index nLAnd less than high refractive index layer refractive index
nH(nL＜ nd＜ nH), active area d is inserted at centera。
Embodiment 1：
As shown in figure 3, the N-DBR and P-DBR of laser use AlGaAs/Al0.2Ga0.8As materials, wherein high and low folding
Penetrate rate layer AlGaAs and Al0.2Ga0.8The refractive index of As materials respectively may be about nH、nL.By the period and the duty that control I gratings of DBR
Than making the output wavelength λ of the first DBR-BRL 11=1050nm；By controlling period and the duty ratio of II gratings of DBR, make second
The output wavelength of DBR-BRL 2 is in λ2=1060nm.The laser of two beam different wave lengths by Y waveguide 3 be coupled into it is a branch of after enter
To power amplifier 4, nonlinear waveguide 5 is entered finally into, generating thz laser by optical difference frequency effect exports.Near red
Wave section, i.e. pumping light wave frequency section, Bragg reflection waveguide work is in suppressed tunnel formula photon band gap guided mode (nL<neff<
nH), it is common to limit light field using total reflection and photon band gap Guidance-Mechanism, due to pump light λ1With idle light wavelength lambda2It is close,
Corresponding guided mode effective refractive index neff1≈neff2.And in terahertz wave band, i.e. flashlight λ3At wavelength, due to material dispersion,
The refractive index of DBR low-index layers is even greater than refractive index of the high refractive index layer near infrared band, therefore for traditional half
Conductor laser structure is difficult to realize phase matched；But for Bragg reflection waveguide laser, it can be made to be operated in Prague
Form photon band gap guided mode (neff<nL), full utilization Bragg reflection carries out light field limitation.By regulating and controlling duct thickness,
It can realize phase matched (neff1/λ1-neff2/λ2=neff3/λ3), so as to obtain efficient frequency conversion.
Claims (4)
1. single-chip integration electric pump Bragg reflection waveguide thz laser device, it is characterized in that, the epitaxial wafer of the laser uses
BRL structures, it includes the first DBR-BRL (1), the 2nd DBR-BRL (2), Y waveguide (3), power amplifier (4) and nonlinear wave
(5) are led, wherein：
First DBR-BRL (1) and the 2nd DBR-BRL (2) is two adjacent stripe lasers on monolithic, and is carved between the two
Distributed Bragg reflection optical grid DBR I and DBR II, the first DBR-BRL (1) and second are carved in isolated groove, surface respectively
DBR-BRL (2) exports narrow linewidth and different wave length λ1And λ2Laser；
The light of first DBR-BRL (1) and the 2nd DBR-BRL (2) outputs respectively enters two input terminals of Y waveguide (3), Y waveguide
(3) upper surface has electric insulation layer I, the direct output dual wavelength λ of output terminal of Y waveguide (3)1And λ2Laser；
The light of Y waveguide (3) output is incident on power amplifier (4), and power amplifier (4) is to the dual wavelength λ of entrance1And λ2Laser
Generate power amplification；
The light of power amplifier (4) output is incident on nonlinear waveguide (5), and nonlinear waveguide (5) upper surface has electric insulation layer
II, it realizes phase matched using Bragg reflection waveguide, makes two kinds of different wave length λ of injection1And λ2Laser generate difference frequency 1/
λ1-1/λ2=1/ λ3, realize thz laser λ3Output.
2. single-chip integration electric pump Bragg reflection waveguide thz laser device according to claim 1, which is characterized in that
First DBR-BRL (1) is identical with the 2nd DBR-BRL (2) structure sheaf, and is followed successively by substrate, N- coverings, N- from the bottom to top
DBR, defect layer, P-DBR, P- covering and P- cap rocks；N-DBR and P-DBR is by multipair high and low refractive index material periodicities group
Into the period logarithm of the two can differ；Defect layer refractive index is between the refractive index of the high low-index layer of N-DBR and P-DBR
Between, it is inserted into active area among it.
3. single-chip integration electric pump Bragg reflection waveguide thz laser device according to claim 1, which is characterized in that
First DBR-BRL (1), the 2nd DBR-BRL (2) and power amplifier (4) three parts are respectively provided with P- electrodes I, II and of P- electrodes
P- electrodes III, and deep isolated groove is carved between each electrode；First DBR-BRL (1) and the 2nd DBR-BRL (2) is operated in small
Current range plays seed laser injection, can change the injection electricity of the first DBR-BRL (1) and the 2nd DBR-BRL (2) respectively
Stream adjusts output wavelength λ1And λ2, so as to fulfill the tunable of output thz laser wavelength；Power amplifier (4) is operated in greatly
Current range plays power amplification to two kinds of wavelength lasers of injection, is swashed by adjusting its controlled current flow system output Terahertz
The power of light.
4. single-chip integration electric pump Bragg reflection waveguide thz laser device according to claim 1, which is characterized in that
The front cavity surface and the front and rear Cavity surface of Y waveguide (3) and power amplifier (4) of first DBR-BRL (1) and the 2nd DBR-BRL (2) is equal
It is obtained by dry etching, can be air, electric insulating medium or transparent planar material among adjacent Cavity surface.
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| CN105529615B (en) * | 2016-02-23 | 2018-10-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser and preparation method thereof |
| US10153614B1 (en) | 2017-08-31 | 2018-12-11 | Apple Inc. | Creating arbitrary patterns on a 2-D uniform grid VCSEL array |
| CN107453189B (en) * | 2017-09-25 | 2023-06-02 | 中国工程物理研究院激光聚变研究中心 | Terahertz laser system |
| CN111082311B (en) * | 2019-12-31 | 2022-04-01 | 中国科学院半导体研究所 | Monolithic manufacturing structure of monolithic photonic integrated device |
| CN114421259A (en) * | 2021-12-27 | 2022-04-29 | 北京遥感设备研究所 | Miniaturized integrated waveguide difference frequency terahertz radiation source |
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Effective date of registration: 20220610 Address after: 130102 first floor, building 2, incubation base, No. 19, Yingkou Road, Changchun Economic Development Zone, Jilin Province Patentee after: Jiguang Semiconductor Technology Co.,Ltd. Address before: 130033, 3888 southeast Lake Road, Jilin, Changchun Patentee before: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CHINESE ACADEMY OF SCIENCE |
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