CN108718032A - A kind of method that full wafer makes and tests edge emitting optical device - Google Patents
A kind of method that full wafer makes and tests edge emitting optical device Download PDFInfo
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- CN108718032A CN108718032A CN201810478523.5A CN201810478523A CN108718032A CN 108718032 A CN108718032 A CN 108718032A CN 201810478523 A CN201810478523 A CN 201810478523A CN 108718032 A CN108718032 A CN 108718032A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Abstract
A kind of method for being made the invention discloses full wafer and testing edge emitting optical device, steps are as follows：S1, the epitaxial growth multiple quantum wells in wafer substrate（MQW）Structure and optical device material structure；S2 scribes groove in optical device material structure on piece, forms several optical device units；S3 scribes light wave conducting bar in optical device unit, then grows dielectric, and fill low refractive index polymer in the groove on light wave conducting bar both sides；S4 makes front electrode and metallizes；S5, at the light extraction end of optical device unit, highly reflecting films are deposited in vapor deposition antireflective coating, backlight end；S6 makes backplate to the wafer substrate back side and metallizes；S7 carries out full wafer on-line testing and screening to the optical device unit in wafer substrate；S8, cutting crystal wafer substrate crack optical device unit, are subsequently encapsulated.Channel bottom is scribed into antireflective face by the present invention, avoids influence of the chase trench bottom reflected light to device performance, reduces etching groove depth, saves etch period.
Description
Technical field
The present invention relates to Fabrication of Optoelectronic Devices field, more particularly to a kind of full wafer makes and full wafer tests edge emitting light device
The method of part.
Background technology
It is well known that edge emitting optical device cannot be such to surface launching optical device, full wafer detection and screening are realized.It is main
The reason is that the light direction of edge emitting optical device is in side, not in top surface.So edge emitting optical device completes some processes
Later, it to be cleaved into a bar item, both ends of the surface distinguish plated film, resolve into singulated dies, then just can be detected and screen.Therefore,
Edge emitting optical device technique is more cumbersome than surface launching optical device and complicated, and processing systems will also increase much, and price is certainly
So than your many of surface launching optical device.
Invention content
It, can not full wafer detection and screening in order to solve edge emitting optical device for the particular problem in above-mentioned practical application
Problem, the present invention propose a kind of method of full wafer making and full wafer test edge emitting optical device, are suitable for including Fabry chamber
（FP）Laser, semiconductor optical amplifier（SOA）, distributed feed-back（DFB）Laser and super radiation light emitting tube（SLD）Full wafer plating
Film and tube core screening, substantially reduce its cost of manufacture.
In order to solve the above technical problems, the technical solution adopted in the present invention is as follows：
A kind of method that full wafer makes and tests edge emitting optical device, steps are as follows：
S1, the epitaxial growth multiple quantum wells in wafer substrate（MQW）Structure and optical device material structure.
The wafer substrate is N-shaped or p-type semiconductor single crystalline substrate；The MQW structures are comprising limiting respectively above and below
（SCH）The Quantum Well of layer builds periodic structure；The optical device material structure includes buffer layer, layer is reduced in far field, grating is buried
Layer, etch stop layer, heterogeneous buried bar shaped limiting layer, upper under-clad layer, contact transition zone and Ohmic contact heavily doped layer, it is described
The periodicity of MQW structures is 2 ~ 15.
S2 scribes groove in optical device material structure on piece, forms several optical device units.
The groove includes the horizontal channel consistent with optical device unit cavity length direction and vertical with cavity length direction vertical
Groove, horizontal channel and the intersection of vertical groove vertical, centre is trapped among by optical device unit；And the side of vertical groove be provided with it is recessed
Groove, chase slot are communicated with groove；The side wall of the groove and the side wall of chase slot are minute surface, the bottom of groove and chase slot
It is antireflective face.The width of the groove is 20 ~ 40 μm, and the width of chase slot is 50 ~ 100 μm, the depth of groove and chase slot
Degree is 4 ~ 10 μm.
The antireflective face in the antireflective face and chase slot of the minute surface of the groove and the minute surface of chase slot and groove uses
Dry etching or wet-dry change mixing etching.
The dry etching is that reactive ion etching or sense coupling or ion beam etching or chemistry are auxiliary
Help ion beam etching or magnetic intensified response ion beam etching；Wet-dry change mixing etching refers to the friendship of dry etching and selective wet chemical etching
For use.
S3 scribes light wave conducting bar in optical device unit, then grows dielectric in crystal column surface, and in light wave conducting bar
Low refractive index polymer is filled in the ditch body on both sides.
The light wave conducting bar includes single ridged waveguides item, double ditch ridge ripple conducting bars and heterogeneous buried waveguide item；The dielectric
For Si3N4Or SiO2, the low refractive index polymer is benzocyclobutene material or polyimide material.
S4 makes front electrode on light wave conducting bar and front electrode is made to metallize.
The making front electrode, which is included at the top of positive waveguide item, outputs electrode window through ray, photoetching solder joint electrode pattern；Just
Face electrode metallization include evaporation or sputter front metal, separate electrode pattern, plating metal thickens and the gold such as annealed alloy
Belong to chemical industry skill；The front metal is TiPtAu or AuGeNi or TiAu alloys and Au.
S5, at the light extraction end of optical device unit, highly reflecting films are deposited in vapor deposition antireflective coating, backlight end.
The chase slot of the optical device unit is backlight end with one end of light wave conducting bar perpendicular contact, and at backlight end, vapor deposition has
High reflection deielectric-coating；The groove of the optical device unit and the other end of light wave conducting bar perpendicular contact are light extraction end, and and chase
Slot is opposite, and at light extraction end, vapor deposition has antireflective deielectric-coating；The reflectance factor of the high reflection deielectric-coating is 75% ~ 95%；It is described to subtract
The reflectance factor of reflecting medium film is 0.1% ~ 2%.
And it is high reflection deielectric-coating to be first deposited, then antireflective deielectric-coating is deposited；The ion source of evaporation medium film device goes out
Penetrating has inclination angle between direction and the normal of wafer substrate.
S6 carries out attenuated polishing to the wafer substrate back side, makes backplate and metallizes.
Wafer substrate thinning back side polishes, and refers under the premise of protecting front electrode graphic structure, is carried on the back to wafer substrate
Face carries out thinned and polishing treatment, and wafer substrate is made to be suitable for the cutting in later stage and the cracking of optical device unit；Backplate gold
Categoryization includes evaporating or sputtering the metallization process such as back metal, photoetching backplate figure, annealed alloy and golden thickening processing；
The back metal is TiPtAu or AuGeN i or TiAu alloy and Au.
S7 carries out full wafer on-line testing and screening to the optical device unit in wafer substrate.
Using auto testing instrument, light, the electric signal for coming from optical device unit are received on wafer substrate surface, and carry out
Data diagnosis, processing and category filter；Light, the electric signal of optical device unit are the additional works of light wave conducting bar for showing optical device unit
When making power supply and signal source, the electricity-electric signal and electro-optical signal converted out by light wave conducting bar, wherein optical signal are by optical device
Light intensity, spectrum and the modulated optical signal that unit light extraction end is sent out.
S8, cutting crystal wafer substrate crack optical device unit, are subsequently encapsulated.
It is cut at the back side of the groove of optical device unit surrounding, wafer substrate, is cut into discrete light by cracking in groove
Device cell.
The main characteristic of the invention lies in that：1）The characteristics of for semiconductor edge emitting optical device, it is proposed that full wafer make and
Test the technical solution of optical device unit；2）The Conceptual Extension for full wafer being made and being tested edge-emitting laser has arrived multiclass light device
On part or even integrated device, the scope of application that full wafer makes and tests is extended；3）By the channel bottom on optical device unit periphery
Antireflective face is scribed into, avoids influence of the chase trench bottom reflected light to device performance, and the etching depth of groove can be reduced,
Save the etching technics time.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is edge emitting distributed feed-back of the present invention（DFB）Laser full wafer makes and test process schematic illustration.
Fig. 2 is the schematic top view that edge-emitting laser unit etching groove of the present invention limits.
Fig. 3 is the double ditch waveguide registerings of edge-emitting laser unit of the present invention and sectional position schematic diagram.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of not making the creative labor
Embodiment shall fall within the protection scope of the present invention.
A kind of method that full wafer makes and tests edge emitting optical device, steps are as follows：
S1, epitaxial growth MQW structures and optical device material structure in wafer substrate.
The wafer substrate is N-shaped or p-type semiconductor single crystalline substrate；The MQW structures are the amount for including upper and lower sch layer
Sub- trap builds periodic structure；The optical device material structure includes buffer layer, far field reduction layer, grating buried layer, etching termination
Layer, heterogeneous buried bar shaped limiting layer, upper under-clad layer, contact transition zone and Ohmic contact heavily doped layer, the period of the MQW structures
Number is 2 ~ 15.
S2 scribes groove in optical device material structure on piece, forms several optical device units.
The groove includes the horizontal channel consistent with optical device unit cavity length direction and vertical with cavity length direction vertical
Groove, horizontal channel and the intersection of vertical groove vertical, centre is trapped among by optical device unit；And the side of vertical groove be provided with it is recessed
Groove, chase slot are communicated with groove；The side wall of the groove and the side wall of chase slot are minute surface, the bottom of groove and chase slot
It is antireflective face.The width of the groove is 20 ~ 40 μm, and the width of chase slot is 50 ~ 100 μm, the depth of groove and chase slot
Degree is 4 ~ 10 μm.
The antireflective face in the antireflective face and chase slot of the minute surface of the groove and the minute surface of chase slot and groove uses
Dry etching or wet-dry change mixing etching.
The dry etching is that reactive ion etching or sense coupling or ion beam etching or chemistry are auxiliary
Help ion beam etching or magnetic intensified response ion beam etching；Wet-dry change mixing etching refers to the friendship of dry etching and selective wet chemical etching
For use.
S3 scribes light wave conducting bar in optical device unit, then grows dielectric in crystal column surface, and in light wave conducting bar
Low refractive index polymer is filled in the ditch body on both sides.
The light wave conducting bar includes single ridged waveguides item, double ditch ridge ripple conducting bars and heterogeneous buried waveguide item；The dielectric
For Si3N4Or SiO2, the low refractive index polymer is benzocyclobutene material or polyimide material.
S4 makes front electrode on light wave conducting bar and front electrode is made to metallize.
The making front electrode, which is included at the top of positive waveguide item, outputs electrode window through ray, photoetching solder joint electrode pattern；Just
Face electrode metallization include evaporation or sputter front metal, separate electrode pattern, plating metal thickens and the gold such as annealed alloy
Belong to chemical industry skill；The front metal is TiPtAu or AuGeNi or TiAu alloys and Au.
S5, at the light extraction end of optical device unit, highly reflecting films are deposited in vapor deposition antireflective coating, backlight end.
The chase slot of the optical device unit is backlight end with one end of light wave conducting bar perpendicular contact, and at backlight end, vapor deposition has
High reflection deielectric-coating；The groove of the optical device unit and the other end of light wave conducting bar perpendicular contact are light extraction end, and and chase
Slot is opposite, and at light extraction end, vapor deposition has antireflective deielectric-coating；The reflectance factor of the high reflection deielectric-coating is 75% ~ 95%；It is described to subtract
The reflectance factor of reflecting medium film is 0.1% ~ 2%.
And it is high reflection deielectric-coating to be first deposited, then antireflective deielectric-coating is deposited；The ion source of evaporation medium film device goes out
Penetrating has inclination angle between direction and the normal of wafer substrate.
S6 carries out attenuated polishing to the wafer substrate back side, makes backplate and metallizes.
Wafer substrate thinning back side polishes, and refers under the premise of protecting front electrode graphic structure, is carried on the back to wafer substrate
Face carries out thinned and polishing treatment, and wafer substrate is made to be suitable for the cutting in later stage and the cracking of optical device unit；Backplate gold
Categoryization includes evaporating or sputtering the metallization process such as back metal, photoetching backplate figure, annealed alloy and golden thickening processing；
The back metal is TiPtAu or AuGeN i or TiAu alloy and Au.
S7 carries out full wafer on-line testing and screening to the optical device unit in wafer substrate.
Using auto testing instrument, light, the electric signal for coming from optical device unit are received on wafer substrate surface, and carry out
Data diagnosis, processing and category filter；Light, the electric signal of optical device unit are the additional works of light wave conducting bar for showing optical device unit
When making power supply and signal source, the electricity-electric signal and electro-optical signal converted out by light wave conducting bar, wherein optical signal are by optical device
Light intensity, spectrum and the modulated optical signal that unit light extraction end is sent out.
S8, cutting crystal wafer substrate crack optical device unit, are subsequently encapsulated.
It is cut at the back side of the groove of optical device unit surrounding, wafer substrate, is cut into discrete light by cracking in groove
Device cell.
Below in conjunction with the accompanying drawings, and by taking the double ditch ridge waveguide Distributed Feedback Lasers of InP-base as an example, the full wafer of the present invention is made and
Test method is explained.
Since Distributed Feedback Laser had been commercial devices already, to common processes such as preparing grating, extension and photoetching in illustrating
It is simple it.
Fig. 1 is that the full wafer of the double ditch ridge waveguide Distributed Feedback Lasers of InP-base makes and eight steps of test, each step are distinguished
It is marked with 1), 2) ... 8), and the first six step is divided to or so two figures, the respectively section of the sectional view of parallel wave conducting bar and vertical waveguide item
Figure, parallel wave conducting bar sectional view are the sectional view by ridge waveguide center line, can intuitively be found out with reference to figure 3.
Illustrate respectively in order below：
Step 1）, epitaxial growth MQW structures 2 and laser material structure 3 in InP wafer substrates 1.
Wherein InP wafer substrates 1 include 100 face single crystalline substrate of 2-4 inches of semiconductor commercialization, N-shaped or p-type semiconductor；
MQW structures 2 are Quantum Well, base periodic structure containing upper and lower sch layer；Laser material structure 3 subtracts including buffer layer, far field
Few layer, grating buried layer, etch stop layer, upper under-clad layer, contact transition zone and Ohmic contact heavily doped layer.
The periodicity of MQW is 2 to 15.Buffer layer in laser material structure, far field reduce layer, grating buried layer,
Etch stop layer, upper under-clad layer, the growth conditions and doping type and optical device for contacting transition zone and Ohmic contact heavily doped layer
Unit oneself requirement is consistent.
Step 2）, groove minute surface 4 and the bottom anti-reflective face 5 of sidewall are scribed in laser material structure on piece.
Wherein laser element is in the region 17 that Fig. 2 etching grooves 16 limit, all around width of four sides groove 16
Degree is 20~40 μm, and the width of front and back end chase slot 18 is 50~100 μm, and gash depth is 4~10 μm；Trenched side-wall minute surface 4
Perpendicular to wafer plane, channel bottom 5 is antireflective face.
Around the groove of laser element, vertical sidewall and bottom anti-reflective face are mixed by dry etching or dry/wet
Lithographic technique is closed to be made.The dry etching technology of etching groove include reactive ion etching, sense coupling, from
The technologies such as beamlet etching, chemically assisted ion beam etching, magnetic intensified response ion beam etching；Dry/wet mixes lithographic technique
Refer to dry etching and selective wet chemical etching is used alternatingly technology.
Step 3）, double ditch ridge ripple conducting bars 6 are scribed in laser element, grow dielectric 7, filling low-refraction polymerization
Object 8.
For wherein double ditch ridge ripple conducting bars 6 in the middle part of double ditches set domain of Fig. 3, dielectric 7 is Si3N4Or SiO2, in double ditches
Fill benzocyclobutene or polyimides low refractive index polymer material 8.
Step 4）, make front electrode and metallization.
Wherein making front electrode 9, which is included at the top of positive waveguide item, outputs electrode window through ray, photoetching solder joint electrode pattern；Just
The metallization of face electrode include evaporation or sputter front metal, separate electrode pattern, plating thickens and the metals such as annealed alloy
Chemical industry skill.
Front metal refers to TiPtAu or AuGeN i or TiAu alloy and Au.
Step 5）, antireflective end face film 10 and high reflection end face are deposited respectively in the front end face and rear end face of laser element
Film 11.
Wherein in laser element light extraction end groove side vapor deposition antireflective end face film 10, reflectance factor is in 0.1%-2%
Between；
18 side of the chase slot vapor deposition high reflection end face film 11 at laser element backlight end, reflectance factor is between 75%-95%；
Front and rear end is vertical with waveguide item.
When front and rear end deielectric-coating is deposited, the height of 18 laser rear end face side of laser element chase slot is first deposited
Reflecting medium film 11, then direction of rotation, the antireflective deielectric-coating 10 of vapor deposition laser front facet side；Evaporate medium film device
There is inclination angle between ion source exit direction and wafer normal.
Step 6）, to 12 attenuated polishing of wafer rear, make backplate 13 and metallization.
Wherein to 12 attenuated polishing of wafer rear, refer under the premise of protecting front description structure, to wafer rear 12
Thinned and polishing treatment is carried out, wafer is made to be suitable for the cutting in later stage and the cracking of laser element；The making of backplate 13
And metallization includes the metallization such as evaporation or sputtering back metal, photoetching backplate figure, annealed alloy and golden thickening processing
Technique.
Back metal refers to TiPtAu or AuGeN i or TiAu alloy and Au.
Step 7）, full wafer on-line testing and screening are made to laser element.
Wherein full wafer on-line testing and screening uses auto testing instrument 14, receives come from laser list on the wafer surface
Light, the electric signal of member, and carry out data diagnosis, processing and category filter.Light, the electric signal of laser element are to show laser
When additional working power and signal source, the electricity-electric signal and electro-optical signal converted out by laser, wherein optical signal are by preceding
Light intensity, spectrum and the modulated optical signal that end face 10 is sent out.
Step 8）, cutting crystal wafer substrate, crack laser element tube core, subsequently encapsulated.
Wherein cutting crystal wafer substrate and cracking laser, refer in the cutting of the back side of the groove 16 of laser element surrounding, slot
Wafer is cut into discrete single laser tube core by interior cracking.
Although the present invention is only made to the full wafer of Distributed Feedback Laser and test is described, the method for the present invention is not limited only to
Distributed Feedback Laser, further includes FP lasers, and LED, SLD, Wavelength tunable laser and SOA are applicable not only to InP substrate, also fit
The full wafer of edge emitting optical device for a variety of semi-conducting materials such as GaAs, GaN, ZnO makes and full wafer test.
Described above is only presently preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention god.
Claims (10)
1. a kind of full wafer makes and the method for test edge emitting optical device, which is characterized in that steps are as follows：
S1, epitaxial growth multi-quantum pit structure and optical device material structure in wafer substrate；
S2 scribes groove in optical device material structure on piece, forms several optical device units；
S3 scribes light wave conducting bar in optical device unit, then grows dielectric in crystal column surface, and on light wave conducting bar both sides
Ditch body in fill low refractive index polymer；
S4 makes front electrode on light wave conducting bar and front electrode is made to metallize；
S5, at the light extraction end of optical device unit, highly reflecting films are deposited in vapor deposition antireflective coating, backlight end；
S6 carries out attenuated polishing to the wafer substrate back side, makes backplate and metallizes；
S7 carries out full wafer on-line testing and screening to the optical device unit in wafer substrate；
S8, cutting crystal wafer substrate crack optical device unit, are subsequently encapsulated.
2. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S1
In, the wafer substrate is N-shaped or p-type semiconductor single crystalline substrate；The multi-quantum pit structure is comprising upper and lower limiting layer respectively
Quantum Well, build periodic structure；The optical device material structure includes buffer layer, far field reduction layer, grating buried layer, etching
Stop layer, heterogeneous buried bar shaped limiting layer, upper under-clad layer, contact transition zone and Ohmic contact heavily doped layer.
3. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S2
In, the groove includes the horizontal channel consistent with optical device unit cavity length direction and the vertical groove vertical with cavity length direction,
Horizontal channel and the intersection of vertical groove vertical, centre is trapped among by optical device unit；And the side of vertical groove is provided with chase slot,
Chase slot is communicated with groove；The side wall of the groove and the side wall of chase slot are minute surface, and the bottom of groove and chase slot is
Antireflective face.
4. full wafer according to claim 3 makes and the method for test edge emitting optical device, it is characterised in that：The groove
Width be 20 ~ 40 μm, the width of chase slot is 50 ~ 100 μm, and the depth of groove and chase slot is 4 ~ 10 μm.
5. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S3
In, the light wave conducting bar includes single ridged waveguides item, double ditch ridge ripple conducting bars and heterogeneous buried waveguide item；The dielectric is Si3N4
Or SiO2, the low refractive index polymer is benzocyclobutene material or polyimide material.
6. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S4
In, the making front electrode, which is included at the top of positive waveguide item, outputs electrode window through ray, photoetching solder joint electrode pattern；Front electrode
Metallization include evaporate or sputter front metal, separate electrode pattern, plating metal thickens and the chemical metallizations such as annealed alloy
Skill；The front metal is TiPtAu or AuGeNi or TiAu alloys and Au.
7. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S5
In, the chase slot of the optical device unit is backlight end with one end of light wave conducting bar perpendicular contact, and at backlight end, vapor deposition has high anti-
Penetrate deielectric-coating；The groove of the optical device unit and the other end of light wave conducting bar perpendicular contact are light extraction end, and with chase slot phase
Right, at light extraction end, vapor deposition has antireflective deielectric-coating；The reflectance factor of the high reflection deielectric-coating is 75% ~ 95%；The antireflective
The reflectance factor of deielectric-coating is 0.1% ~ 2%.
8. full wafer according to claim 7 makes and the method for test edge emitting optical device, it is characterised in that：First vapor deposition is high
Reflecting medium film, then antireflective deielectric-coating is deposited；Evaporate the normal of the ion source exit direction and wafer substrate of medium film device
Between have inclination angle.
9. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step S6
In, the polishing of wafer substrate thinning back side refers under the premise of protecting front electrode graphic structure, is carried out to the wafer substrate back side
Thinned and polishing treatment, makes wafer substrate be suitable for the cutting in later stage and the cracking of optical device unit；Backplate metallization packet
Include the metallization process such as evaporation or sputtering back metal, photoetching backplate figure, annealed alloy and golden thickening processing；The back of the body
Face metal is TiPtAu or AuGeN i or TiAu alloy and Au.
10. full wafer according to claim 1 makes and the method for test edge emitting optical device, it is characterised in that：In step
In S7, using auto testing instrument, light, the electric signal for coming from optical device unit, line number of going forward side by side are received on wafer substrate surface
According to diagnosis, processing and category filter；Light, the electric signal of optical device unit are the additional work of light wave conducting bar for showing optical device unit
When power supply and signal source, the electricity-electric signal and electro-optical signal converted out by light wave conducting bar, wherein optical signal are by optical device list
Light intensity, spectrum and the modulated optical signal that first light extraction end is sent out.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111029905A (en) * | 2019-11-29 | 2020-04-17 | 河南仕佳光子科技股份有限公司 | Typesetting structure for integrally manufacturing edge-emitting optical device |
| CN111082311A (en) * | 2019-12-31 | 2020-04-28 | 中国科学院半导体研究所 | Monolithic manufacturing structure of monolithic photonic integrated device |
| CN111129945A (en) * | 2019-11-29 | 2020-05-08 | 河南仕佳光子科技股份有限公司 | Method for integrally manufacturing isolator-saving edge-emitting laser chip |
| CN111711069A (en) * | 2020-08-20 | 2020-09-25 | 武汉云岭光电有限公司 | Edge-emitting semiconductor laser integrated with ring resonator |
| CN112305667A (en) * | 2019-07-29 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | Optical waveguide device and method for manufacturing the same |
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| CN112305667A (en) * | 2019-07-29 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | Optical waveguide device and method for manufacturing the same |
| CN112305667B (en) * | 2019-07-29 | 2021-09-14 | 中国科学院上海微系统与信息技术研究所 | Optical waveguide device and method for manufacturing the same |
| CN111029905A (en) * | 2019-11-29 | 2020-04-17 | 河南仕佳光子科技股份有限公司 | Typesetting structure for integrally manufacturing edge-emitting optical device |
| CN111129945A (en) * | 2019-11-29 | 2020-05-08 | 河南仕佳光子科技股份有限公司 | Method for integrally manufacturing isolator-saving edge-emitting laser chip |
| CN111129945B (en) * | 2019-11-29 | 2021-06-18 | 河南仕佳光子科技股份有限公司 | Method for integrally manufacturing isolator-saving edge-emitting laser chip |
| CN111082311A (en) * | 2019-12-31 | 2020-04-28 | 中国科学院半导体研究所 | Monolithic manufacturing structure of monolithic photonic integrated device |
| CN111082311B (en) * | 2019-12-31 | 2022-04-01 | 中国科学院半导体研究所 | Monolithic manufacturing structure of monolithic photonic integrated device |
| CN111711069A (en) * | 2020-08-20 | 2020-09-25 | 武汉云岭光电有限公司 | Edge-emitting semiconductor laser integrated with ring resonator |
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