CN112305667B - Optical waveguide device and method for manufacturing the same - Google Patents
Optical waveguide device and method for manufacturing the same Download PDFInfo
- Publication number
- CN112305667B CN112305667B CN201910689392.XA CN201910689392A CN112305667B CN 112305667 B CN112305667 B CN 112305667B CN 201910689392 A CN201910689392 A CN 201910689392A CN 112305667 B CN112305667 B CN 112305667B
- Authority
- CN
- China
- Prior art keywords
- optical waveguide
- injection region
- semiconductor layer
- type injection
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12188—Ion implantation
Abstract
The invention provides an optical waveguide device and a preparation method thereof. The preparation method comprises the following steps: forming a patterned composite substrate which sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer; photoetching the top semiconductor layer above the groove to form an optical waveguide; performing ion implantation with a first concentration on the optical waveguide to form a first P-type implantation area and a first N-type implantation area adjacent to the first P-type implantation area in the optical waveguide; performing ion implantation with a second concentration on the top semiconductor layer at the periphery of the optical waveguide to form a second P-type implantation area and a second N-type implantation area respectively; and forming metal electrodes on the surfaces of the second P-type injection region and the second N-type injection region. The invention is beneficial to simplifying the preparation process of the optical waveguide device, reducing the production cost and improving the device performance.
Description
Technical Field
The invention belongs to the field of optical device manufacturing, and particularly relates to an optical waveguide device and a preparation method thereof.
Background
Silicon-based photonics is a science based on the working principle of micro/nano-scale photon, electron and photoelectronic devices, and utilizes the technology and method compatible with the silicon-based integrated circuit technology to integrate related optical devices on the same silicon substrate in a single chip or in a mixed manner. The silicon-based photonic device has the characteristics of low production cost, high process stability and the like, and is more and more widely concerned and applied in various fields such as communication, sensing, biology and the like. The mid-infrared band (2 um-20 um) is an important band range in the spectrum, the absorption peaks of many gases are concentrated in the band, and the optical devices in the mid-infrared band have very important applications in various scientific and technological fields including sensing, environmental monitoring, biomedical applications, thermal imaging, and the like. Therefore, the development of mid-infrared silicon-based optics is a very important and significant issue.
SOI (Silicon-On-Insulator) technology, i.e. Silicon On an insulating substrate, in which a buried oxide layer is introduced between a top layer of Silicon and a back substrate, is an important optical waveguide material used in Silicon-based optoelectronics in recent years. Silicon-based photonics is mainly based on SOI substrate materials, silicon has a low-loss window at 3-8 microns in the mid-infrared band, germanium has a low-loss window at 2-14.6 microns, however, silica has very large absorption loss after being larger than 3.6 microns. Therefore, if a general SOI or GOI substrate material is directly used, the transmission loss of the prepared mid-infrared silicon-based waveguide is too high due to the absorption of silicon dioxide, and the performance of the related device prepared based on the waveguide is also remarkably deteriorated. One existing method is to form a suspended structure by hollowing out the lower part of the optical waveguide after the optical waveguide is formed, so as to prevent the absorption of the silicon dioxide to the mid-infrared light wave, but the method has many problems. For example, since the optical waveguide is hollowed by etching or other processes after being formed, the performance of the device is reduced due to the damage of the optical waveguide in the etching process; and the device structure manufactured based on this method is likely to expose the substrate to air, and moisture and the like in the air may diffuse into the device, resulting in a decrease in the reliability of the device. Due to the existence of the hollow structure, further structural processing is difficult to perform on the basis of the optical waveguide. If the hollowed-out structure needs to be sealed again, a dielectric layer which is not absorbent to light waves in the mid-infrared band needs to be selected, and the complexity of the process is further increased.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide an optical waveguide device and a method for manufacturing the same, which are used to solve the problems that the existing optical waveguide device is easy to damage the optical waveguide during the manufacturing process, and moisture may diffuse into the device, causing the performance of the device to decrease or even completely fail, and the process integration is difficult during the manufacturing process of the optical waveguide device with a complex structure.
To achieve the above and other related objects, the present invention provides a method for manufacturing an optical waveguide device, the method comprising the steps of: forming a patterned composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer; photoetching the top semiconductor layer above the groove to form an optical waveguide; performing ion implantation with a first concentration on the optical waveguide to form a first P-type implantation area and a first N-type implantation area adjacent to the first P-type implantation area in the optical waveguide; performing ion implantation with a second concentration on the top semiconductor layer on the periphery of the optical waveguide to form a second P-type implantation region and a second N-type implantation region respectively, wherein the second concentration is greater than the first concentration; the second P-type injection region is connected with the first P-type injection region, and the second N-type injection region is connected with the first N-type injection region; and forming metal electrodes on the surfaces of the second P-type injection region and the second N-type injection region.
Optionally, an upper surface of the groove is flush with a lower surface of the top semiconductor layer, and a lower surface of the groove is flush with an upper surface of the bottom semiconductor layer.
Optionally, the groove extends downward into the bottom semiconductor layer, and an upper surface of the groove is flush with a lower surface of the top semiconductor layer.
Optionally, the optical waveguide is located right above the groove, a horizontal area of the optical waveguide is smaller than a horizontal area of the groove, and the second N-type injection region and the second P-type injection region are both located above the groove or the insulating layer.
Optionally, the material of the top semiconductor layer and the bottom semiconductor layer is one or both of silicon and germanium.
Optionally, the method of forming the metal electrode comprises the steps of: forming a photoresist layer on the surface of the structure obtained after the second N-type injection region and the second P-type injection region are formed; performing photoetching on the photoresist layer to form an opening corresponding to the position of the metal electrode, wherein the second N-type injection region and the second P-type injection region are exposed out of the opening; forming a metal electrode layer, wherein the metal electrode layer is positioned in the opening and on the surface of the photoresist layer; and removing the photoresist layer and the metal electrode layer on the surface of the photoresist layer.
The invention also provides an optical waveguide device, which comprises a composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer; an optical waveguide is formed in the top semiconductor layer and is located above the groove; a first N-type injection region with first doping concentration and a first P-type injection region with first doping concentration are formed in the optical waveguide; a second N-type injection region with second doping concentration and a second P-type injection region with second doping concentration are formed in the top semiconductor layer and are positioned on the periphery of the optical waveguide; the second N-type injection region is connected with the first N-type injection region, the second P-type injection region is connected with the first P-type injection region, and the second doping concentration is greater than the first doping concentration; and the metal electrode is positioned on the surfaces of the second N-type injection region and the second P-type injection region.
Optionally, the second N-type implantation region and the second P-type implantation region are both located above the groove or the insulating layer.
Optionally, the thickness of the insulating layer is 1 micrometer to 5 micrometers, and the thickness of the top semiconductor layer is 100 nanometers to 5 micrometers.
Optionally, the metal electrode has a distance from the first N-type implantation region, the first P-type implantation region, and the top semiconductor layer.
As described above, the optical waveguide device and the method for manufacturing the same according to the present invention have the following advantageous effects: according to the invention, the groove is formed below the position where the optical waveguide is to be formed, so that the damage of the optical waveguide, which is easily caused in the traditional preparation method of forming the optical waveguide and then hollowing, is avoided, the water vapor is prevented from being diffused into the optical waveguide device, the problems of difficult process integration and the like in the process of preparing the optical waveguide device with a complex structure are solved, and the production yield and the device performance are improved. The preparation method is simple, and can realize large-scale production through graphical customization of the composite substrate, thereby being beneficial to further simplification of the preparation process and reduction of the production cost. The optical waveguide device prepared by the preparation method can obviously reduce the material absorption loss in the middle infrared band due to the introduction of the silicon dioxide material.
Drawings
FIG. 1 is a flow chart showing a method for manufacturing an optical waveguide device of the present invention.
FIGS. 2 to 6b are schematic structural views showing steps of a method for manufacturing an optical waveguide device according to the present invention; fig. 6a and 6b are schematic structural diagrams of an optical waveguide device manufactured by the manufacturing method of the present invention.
Fig. 7 to 12 are schematic views showing the manufacturing process of the composite substrate of the optical waveguide device of the present invention.
Description of the element reference numerals
11 bottom semiconductor layer
12 insulating layer
13 top semiconductor layer
14 groove
15 optical waveguide
16 first P-type implantation region
17 first N-type implantation region
18 second P-type implantation region
19 second N-type implantation region
20 metal electrode
21 first silicon wafer
22 second silicon wafer
23 oxide layer
24 opening
S01-S05
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1, the present invention provides a method for manufacturing an optical waveguide device, the method comprising the steps of:
s01: forming a patterned composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer 11, an insulating layer 12 and a top semiconductor layer 13 from bottom to top; a groove 14 is formed in the composite substrate, and the groove 14 penetrates through the insulating layer 12 and is covered by the top semiconductor layer 13, as shown in fig. 2 in particular;
s02: performing photolithography etching on the top semiconductor layer 13 above the groove 14 to form an optical waveguide 15, as shown in fig. 3 in particular;
s03: performing ion implantation of a first concentration on the optical waveguide 15 to form a first P-type implantation region 16 and a first N-type implantation region 17 adjacent to the first P-type implantation region 16 in the optical waveguide 15, as shown in fig. 4 specifically;
s04: performing ion implantation of a second concentration on the top semiconductor layer 13 at the periphery of the optical waveguide 15 to form a second P-type implantation region 18 and a second N-type implantation region 19 respectively, wherein the second concentration is greater than the first concentration; the second P-type implantation region 18 is connected to the first P-type implantation region 16, and the second N-type implantation region 19 is connected to the first N-type implantation region 17, as shown in fig. 5;
s05: a metal electrode 20 is formed on the surface of the second P-type implantation region 18 and the second N-type implantation region 19, as shown in fig. 6a and 6 b.
According to the invention, the groove is formed below the position where the optical waveguide is to be formed, so that the damage of the optical waveguide, which is easily caused in the traditional preparation method of forming the optical waveguide and then hollowing, is avoided, the water vapor is prevented from being diffused into the optical waveguide device, the problems of difficult process integration and the like in the preparation of the optical waveguide device with a complex structure are solved, and the production yield and the device performance are improved. The preparation method is simple, and can realize large-scale production through graphical customization of the composite substrate, thereby being beneficial to further simplification of the preparation process and further reduction of the production cost.
The bottom semiconductor layer 11 and the top semiconductor layer 13 are preferably one or more of silicon and germanium, and both are preferably the same, such as a silicon layer, a germanium layer, or a silicon germanium layer, which is advantageous for reducing the transmission loss of light. As an example, the thickness of the bottom semiconductor layer 11 is preferably greater than the thickness of the top semiconductor layer 13. For example, in one example, the thickness of the bottom semiconductor layer 11 is 650 μm to 750 μm; the thickness of the top semiconductor layer 13 is 100nm (nanometer) to 5 μm (micrometer), such as 220nm, 340nm, 3um, etc. The horizontal plane shape (i.e. the top view shape) of the groove 14 may be rectangular, circular, annular or other shapes, and is preferably rectangular or circular in this embodiment, which is beneficial to simplify the manufacturing process of the device. The insulating layer 12 is preferably a silicon dioxide layer, and the thickness is preferably 1-5 μm, such as 2um, 3um, etc.
In one example, as shown in fig. 2, the upper surface of the groove 14 is flush with the lower surface of the top semiconductor layer 13, and the lower surface of the groove 14 is flush with the upper surface of the bottom semiconductor layer 11, i.e. the groove 14 is only located in the insulating layer 12 and does not extend into the bottom semiconductor layer 11. The optical waveguide device with the structure is relatively simpler in preparation, and is beneficial to reducing the preparation cost. In this embodiment, the fabrication process of the optical waveguide device will be mainly described by taking the structure as an example (fig. 2 to 6a are all based on the structure).
Of course, in another example, the groove 14 extends downward into the bottom semiconductor layer 11, and the upper surface of the groove 14 is flush with the lower surface of the top semiconductor layer 13, that is, the groove 14 not only penetrates through the insulating layer 12, but also partially inside the bottom semiconductor layer 11 but does not penetrate through the bottom semiconductor layer 11, that is, there is a gap between the lower surface of the groove 14 and the lower surface of the bottom semiconductor layer 11.
As an example, the horizontal area of the optical waveguide 15 is smaller than that of the groove 14, and the shape of the optical waveguide 15 may be set as needed, such as a circular column, a rectangular column, a cylinder, a serpentine ridge, or other shapes, to transmit light in a predetermined direction, so as to reduce transmission loss.
As an example, during the process of performing the photolithography etching on the top semiconductor layer 13 above the groove 14 to form the optical waveguide 15, the top semiconductor layer 13 at the periphery of the optical waveguide 15 is only partially etched to ensure that the top semiconductor layer 13 can also play a role of mechanical support, and only the thickness of the top semiconductor layer 13 above the groove 14 and at the periphery of the optical waveguide 15 after the photolithography etching is smaller than the thickness (i.e. height) of the top semiconductor layer 13 on the insulating layer 12 and smaller than the thickness (i.e. height) of the optical waveguide 15.
By way of example, the first concentration is 1 × 1016ions/cm3～1×1018ions/cm3The first P-type implantation region 16 formed by ion implantation and the first N-type implantation region 17 adjacent thereto form a PN junction. Applying a reverse bias across the PN junction can adjust the electron and hole concentrations within the optical waveguide 15 and thereby change the effective refractive index of the optical waveguide 15, thereby achieving adjustment of the amplitude and phase of the mid-infrared band light wave propagating in the optical waveguide 15.
As an example, the second richDegree greater than 1X 1018ions/cm3More preferably greater than 1 × 1019ions/cm3To ensure that the second P-type injection region 18 and the second N-type injection region 19 have good thermal/electrical conductivity, the second P-type injection region 18 and the second N-type injection region 19 can pressurize two ends of the PN junction together with the metal electrode. And as an example, the optical waveguide 15 is located right above the groove 14, and the horizontal area of the optical waveguide 15 is smaller than that of the groove 14, and the second N-type injection region 19 and the second P-type injection region 18 may both be located above the groove 14, or both may be located above the insulating layer 12. The second N-type implantation region 19, the second P-type implantation region 18, the first P-type implantation region 16 and the first N-type implantation region 17 are all located on the same horizontal plane, which contributes to further miniaturization of the optical waveguide device and further simplification of the manufacturing process. For example, the second N-type implantation region 19 and the second P-type implantation region 18 are simultaneously defined in the process of defining the optical waveguide 15 by photolithography, and then the ion implantation of the first concentration and the ion implantation of the second concentration are performed under the protection of the same photomask. The implanted ions for forming the P-type implanted region may be one or more of boron or indium, and the implanted ions for forming the N-type implanted region may be one or more of phosphorus and arsenic, and are not limited in particular, and the ions implanted for forming the same conductivity type region during the ion implantation of the first concentration and the ion implantation of the second concentration are preferably the same.
As an example, the method of forming the metal electrode 20 includes the steps of: forming a photoresist layer on the surface of the structure obtained after the second N-type implantation region 19 and the second P-type implantation region 18 are formed; performing photolithography etching on the photoresist layer to form an opening corresponding to the position of the metal electrode 20, wherein the second N-type injection region 19 and the second P-type injection region 18 are exposed through the opening; forming a metal electrode 20 layer, wherein the metal electrode 20 layer is positioned in the opening and on the surface of the photoresist layer; and removing the photoresist layer and the metal electrode 20 layer on the surface of the photoresist layer. The metal electrode 20 is formed to have a space between the first N-type implantation region 17, the first P-type implantation region 16 and the top semiconductor layer 13, which is filled with air, because air absorbs mid-infrared light less, thereby reducing light loss. The metal electrode 20 may be one or more of gold, silver, copper, aluminum, and other conductive metal electrodes.
It should be noted that, although the specific forming position of the groove 14 may be different in different examples, the forming process of the patterned composite substrate may be substantially the same as long as the shape and the depth of the groove 14 are predefined according to the requirement. The formation process of the composite substrate in which the groove 14 is only located in the insulating layer 12 will be schematically described in this embodiment, but the process is also applicable to the formation of the composite substrate in other examples.
As shown in fig. 7 to 12, a first silicon wafer 21, such as a single crystal silicon wafer (as shown in fig. 7), is provided, and an oxide layer 23 (as shown in fig. 8, the oxide layer 23 corresponds to the insulating layer 12 of the composite substrate of this embodiment) is formed on the surface of the first silicon wafer 21, the oxide layer 23 is preferably silicon oxide, and a method for forming the oxide layer 23 includes, but is not limited to, a thermal oxidation method or a vapor deposition method. In this embodiment, as an example, the thickness of the oxide layer 23 is preferably 1 to 5 μm, such as 2um, 3um, etc.;
as shown in fig. 9, performing ion implantation on the first silicon wafer 21 by using the surface of the oxide layer 23 as an implantation surface to implant ions to a predetermined depth in the first silicon wafer 21 (as shown by a dotted line in fig. 9, the first silicon wafer 21 above the predetermined depth corresponds to the top silicon layer 13 of the composite substrate in this embodiment), where the predetermined depth corresponds to the thickness of the top silicon layer 13 of the composite substrate in this embodiment; the implanted ions can be one or more of H ions and He ions, and the implantation dosage is 1 x 1016ions/cm2～1×1018ions/cm2The injection process can be sequential injection or simultaneous injection;
as shown in fig. 10, the oxide layer 23 is subjected to photolithography etching to define an opening 24 (the opening 24 corresponds to the groove 14 in the composite substrate), in this embodiment, the opening 24 is only located in the oxide layer 23 and penetrates through the oxide layer 23;
providing a second silicon wafer 22 (in this embodiment, the second silicon wafer 22 corresponds to the bottom silicon layer 11 of the composite substrate), for example, another monocrystalline silicon wafer, and bonding the second silicon wafer 22 and the first silicon wafer 21 having the opening 24 formed on the surface thereof, where the surface where the opening 24 is located is a bonding surface, as shown in fig. 11 specifically; and then, peeling the bonded structure from the predetermined depth, such as by high-temperature annealing to peel off the portion of the first silicon wafer 21 below the predetermined depth, or by chemical mechanical polishing to remove the portion of the first silicon wafer 21 below the predetermined depth, so as to obtain the composite substrate shown in fig. 12.
Naturally, the method and the step for forming the composite substrate may also have other options, for example, in the above example, the opening 24 may be formed by photolithography etching without performing ion implantation after the oxide layer 23 is formed on the surface of the first silicon wafer 21, the second silicon wafer 22 without the oxide layer 23 formed on the surface is subjected to ion implantation and implanted to a predetermined depth, then the first silicon wafer 21 and the second silicon wafer 22 are bonded, and the bonded wafer is peeled from the region where the predetermined depth is located, so that the composite substrate is obtained, in this step, the first silicon wafer 21 corresponds to the bottom silicon layer 11 of the composite substrate, and the non-peeled portion of the second silicon wafer 22 bonded to the oxide layer 23 corresponds to the top silicon layer 13 of the composite substrate.
In another example, the first silicon wafer 21 with the opening 24 formed on the surface thereof may be bonded to an SOI structure/GOI structure with a lift-off structure layer (typically, a structure layer made of an oxide material) formed therebetween, and the bonded structure may be lifted off from the lift-off structure layer of the SOI structure/GOI structure to remove the lift-off structure layer, thereby obtaining the composite substrate in the present application.
Appropriate adjustments (e.g., adjusting the depth of the opening 24) in accordance with the above-described method can result in the composite substrate desired in other embodiments without further expansion.
The composite substrate can be customized according to needs to realize large-scale production, and is beneficial to further simplification of the preparation process of the optical waveguide device and further reduction of the production cost.
The optical waveguide device prepared by the invention can be used as a mid-infrared band electro-optic modulator and can be further used for manufacturing more complex mid-infrared silicon-based optical devices. The preparation method is beneficial to simplifying the preparation process and reducing the production cost, and the optical waveguide device prepared by the method can effectively reduce the transmission loss of light and improve the performance of the device.
As shown in fig. 6a and 6b, the present invention also provides an optical waveguide device. The optical waveguide device comprises a composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer 1311, an insulating layer 12 and a top semiconductor layer from bottom to top; a groove 14 is formed in the composite substrate, the groove 14 penetrates through the insulating layer 12 and is covered by the top semiconductor layer, the groove 14 may be only located in the insulating layer 12 as shown in fig. 6a, or may extend downward from the insulating layer 12 into the bottom semiconductor layer 1311 as shown in fig. 6 b; an optical waveguide 15 is formed in the top semiconductor layer, and the optical waveguide 15 is positioned above the groove 14; a first N-type injection region 17 with a first doping concentration and a first P-type injection region 16 with the first doping concentration are formed in the optical waveguide 15; a second N-type injection region 19 with a second doping concentration and a second P-type injection region 18 with a second doping concentration are also formed in the top semiconductor layer and are positioned at the periphery of the optical waveguide 15; the second N-type implantation region 19 is connected to the first N-type implantation region 17, the second P-type implantation region 18 is connected to the first P-type implantation region 16, and the second doping concentration is greater than the first doping concentration; and a metal electrode 20 located on the surfaces of the second N-type implantation region 19 and the second P-type implantation region 18. The optical waveguide device is manufactured according to any one of the manufacturing methods, so the above description of the optical waveguide device is fully applicable here, and the foregoing description may be specifically referred to, and the same contents are not repeatedly described as much as possible for the sake of brevity.
In one example, the second N-type implant region 19 and the second P-type implant region 18 are both located above the recess 14; of course, in other examples, the second N-type implantation region 19 and the second P-type implantation region 18 may also be both located on the insulating layer 12, which is not strictly limited in this embodiment;
by way of example, the insulating layer 12 has a thickness of 1 micron to 5 microns and the top semiconductor layer has a thickness of 100 nanometers to 5 microns.
As an example, the metal electrode 20 has a space between the first N-type injection region 17, the first P-type injection region 16 and the top semiconductor layer, and the space is filled with air, because air absorbs mid-infrared light less, thereby reducing light loss.
In summary, the present invention provides a method for manufacturing an optical waveguide device, the method comprising the steps of: forming a patterned composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer; photoetching and etching the top semiconductor layer above the groove to form an optical waveguide, and performing ion implantation with first concentration on the optical waveguide to form a first P-type implantation area and a first N-type implantation area adjacent to the first P-type implantation area in the optical waveguide; performing ion implantation with a second concentration on the top semiconductor layer on the periphery of the optical waveguide to form a second P-type implantation region and a second N-type implantation region respectively, wherein the second concentration is greater than the first concentration; the second P-type injection region is connected with the first P-type injection region, and the second N-type injection region is connected with the first N-type injection region; and forming metal electrodes on the surfaces of the second P-type injection region and the second N-type injection region. According to the invention, the groove is formed below the position where the optical waveguide is to be formed, so that the damage of the optical waveguide easily caused in the traditional preparation method of forming the optical waveguide and then hollowing is avoided, the water vapor is prevented from being diffused into the optical waveguide device, the problems of difficult process integration and the like in the process of preparing the optical waveguide device with a complex structure can be effectively solved, and the production yield and the device performance are improved. The preparation method is simple, and can realize large-scale production through graphical customization of the composite substrate, thereby being beneficial to further simplification of the preparation process and reduction of the production cost. The optical waveguide device prepared by the preparation method of the invention has the advantage that the material absorption loss in the middle infrared band due to the introduction of the silicon dioxide material is obviously reduced. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method of fabricating an optical waveguide device, the method comprising the steps of:
forming a patterned composite substrate, wherein the composite substrate sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer;
photoetching the top semiconductor layer above the groove to form an optical waveguide;
performing ion implantation with a first concentration on the optical waveguide to form a first P-type implantation area and a first N-type implantation area adjacent to the first P-type implantation area in the optical waveguide;
performing ion implantation with a second concentration on the top semiconductor layer on the periphery of the optical waveguide to form a second P-type implantation region and a second N-type implantation region respectively, wherein the second concentration is greater than the first concentration; the second P-type injection region is connected with the first P-type injection region, and the second N-type injection region is connected with the first N-type injection region;
and forming metal electrodes on the surfaces of the second P-type injection region and the second N-type injection region.
2. The method for producing an optical waveguide device according to claim 1, wherein: the upper surface of recess with the lower surface of top semiconductor layer is parallel and level mutually, the lower surface of recess with the upper surface of bottom semiconductor layer is parallel and level mutually.
3. The method for producing an optical waveguide device according to claim 1, wherein: the groove extends downwards into the bottom semiconductor layer, and the upper surface of the groove is flush with the lower surface of the top semiconductor layer.
4. The method for producing an optical waveguide device according to claim 1, wherein: the optical waveguide is located right above the groove, the horizontal area of the optical waveguide is smaller than that of the groove, and the second N-type injection region and the second P-type injection region are both located above the groove or the insulating layer.
5. The method for producing an optical waveguide device according to claim 1, wherein: the top semiconductor layer and the bottom semiconductor layer are made of one or two of silicon and germanium.
6. The method for producing an optical waveguide device according to any one of claims 1 to 5, wherein the method for forming the metal electrode comprises the steps of:
forming a photoresist layer on the surface of the structure obtained after the second N-type injection region and the second P-type injection region are formed;
performing photoetching on the photoresist layer to form an opening corresponding to the position of the metal electrode, wherein the second N-type injection region and the second P-type injection region are exposed out of the opening;
forming a metal electrode layer, wherein the metal electrode layer is positioned in the opening and on the surface of the photoresist layer; and removing the photoresist layer and the metal electrode layer on the surface of the photoresist layer.
7. An optical waveguide device comprising
The composite substrate sequentially comprises a bottom semiconductor layer, an insulating layer and a top semiconductor layer from bottom to top; a groove is formed in the composite substrate, penetrates through the insulating layer and is covered by the top semiconductor layer;
an optical waveguide is formed in the top semiconductor layer and is located above the groove; a first N-type injection region with first doping concentration and a first P-type injection region with first doping concentration are formed in the optical waveguide;
a second N-type injection region with second doping concentration and a second P-type injection region with second doping concentration are formed in the top semiconductor layer and are positioned on the periphery of the optical waveguide; the second N-type injection region is connected with the first N-type injection region, the second P-type injection region is connected with the first P-type injection region, and the second doping concentration is greater than the first doping concentration;
and the metal electrode is positioned on the surfaces of the second N-type injection region and the second P-type injection region.
8. The optical waveguide device of claim 7, wherein: the second N-type injection region and the second P-type injection region are both positioned above the groove or the insulating layer.
9. The optical waveguide device of claim 7, wherein: the thickness of the insulating layer is 1-5 microns, and the thickness of the top semiconductor layer is 100-5 microns.
10. The optical waveguide device according to any one of claims 7 to 9, wherein: the metal electrode has a distance with the first N-type injection region, the first P-type injection region and the top semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910689392.XA CN112305667B (en) | 2019-07-29 | 2019-07-29 | Optical waveguide device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910689392.XA CN112305667B (en) | 2019-07-29 | 2019-07-29 | Optical waveguide device and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112305667A CN112305667A (en) | 2021-02-02 |
| CN112305667B true CN112305667B (en) | 2021-09-14 |
Family
ID=74329844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910689392.XA Active CN112305667B (en) | 2019-07-29 | 2019-07-29 | Optical waveguide device and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112305667B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306314A2 (en) * | 1987-09-04 | 1989-03-08 | Sharp Kabushiki Kaisha | Semiconductor laser devices |
| JPH08321658A (en) * | 1995-05-25 | 1996-12-03 | Sony Corp | Semiconductor laser |
| KR20070040131A (en) * | 2005-10-11 | 2007-04-16 | 삼성전자주식회사 | Edge emitting laser diode and fabrication method of the same |
| CN101438419A (en) * | 2006-03-13 | 2009-05-20 | 日本电气株式会社 | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
| CN103137777A (en) * | 2011-11-21 | 2013-06-05 | 富士通株式会社 | Semiconductor optical device |
| CN103165443A (en) * | 2011-12-16 | 2013-06-19 | 上海华虹Nec电子有限公司 | Insulated gate transistor device and manufacturing technology method thereof |
| CN106098817A (en) * | 2016-06-24 | 2016-11-09 | 中国科学院长春光学精密机械与物理研究所 | Opto-electronic device, semiconductor substrate and preparation method thereof |
| CN107111060A (en) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | With the 3D integreted phontonics of optical coupling element |
| CN108718032A (en) * | 2018-05-18 | 2018-10-30 | 河南仕佳光子科技股份有限公司 | A kind of method that full wafer makes and tests edge emitting optical device |
-
2019
- 2019-07-29 CN CN201910689392.XA patent/CN112305667B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306314A2 (en) * | 1987-09-04 | 1989-03-08 | Sharp Kabushiki Kaisha | Semiconductor laser devices |
| JPH08321658A (en) * | 1995-05-25 | 1996-12-03 | Sony Corp | Semiconductor laser |
| KR20070040131A (en) * | 2005-10-11 | 2007-04-16 | 삼성전자주식회사 | Edge emitting laser diode and fabrication method of the same |
| CN101438419A (en) * | 2006-03-13 | 2009-05-20 | 日本电气株式会社 | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
| CN103137777A (en) * | 2011-11-21 | 2013-06-05 | 富士通株式会社 | Semiconductor optical device |
| CN103165443A (en) * | 2011-12-16 | 2013-06-19 | 上海华虹Nec电子有限公司 | Insulated gate transistor device and manufacturing technology method thereof |
| CN107111060A (en) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | With the 3D integreted phontonics of optical coupling element |
| CN106098817A (en) * | 2016-06-24 | 2016-11-09 | 中国科学院长春光学精密机械与物理研究所 | Opto-electronic device, semiconductor substrate and preparation method thereof |
| CN108718032A (en) * | 2018-05-18 | 2018-10-30 | 河南仕佳光子科技股份有限公司 | A kind of method that full wafer makes and tests edge emitting optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112305667A (en) | 2021-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110325900B (en) | Waveguide optoelectronic device | |
| CN102323646B (en) | Grating coupler and preparation method thereof | |
| CN104282794A (en) | Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same | |
| US5280189A (en) | Semiconductor element with a silicon layer | |
| JP5370857B2 (en) | GERMANIUM RECEIVER AND MANUFACTURING METHOD THEREOF | |
| CN113534337B (en) | Processing method and structure of silicon photonic chip optical coupling structure | |
| CN112285826B (en) | Silicon-based multimode light receiving device and preparation method thereof | |
| CN112305785A (en) | Preparation method of thermo-optic phase shifter based on SOI substrate | |
| CN112305667B (en) | Optical waveguide device and method for manufacturing the same | |
| TW200947095A (en) | Electro-optical modulator and manufacturing method thereof | |
| JP5824929B2 (en) | Method for manufacturing optical semiconductor element | |
| KR102268815B1 (en) | Optoelectronic device and method for fabricating thereof | |
| CN214586291U (en) | Optical waveguide doping structure and silicon-based electro-optic modulator | |
| CN112379479B (en) | Silicon-based optical transceiver and preparation method thereof | |
| US10782475B2 (en) | III-V component with multi-layer silicon photonics waveguide platform | |
| CN112558217A (en) | Electro-optical device and manufacturing method thereof | |
| CN112558333A (en) | Electro-optical device and manufacturing method thereof | |
| Mishra et al. | Implementation of lateral Ge–on–Si heterojunction photodetectors via rapid melt growth and self-aligned microbonding for Si photonics | |
| CN210182395U (en) | Integrated germanium photoelectric detector based on wafer bonding technology | |
| WO2022247479A1 (en) | Optical waveguide doped structure, manufacturing method therefor, and silicon-based electro-optic modulator | |
| CN114566557B (en) | Avalanche photodetector and preparation method thereof | |
| CN114400236B (en) | Silicon optical integrated chip integrating silicon optical modulator and germanium-silicon detector and preparation method | |
| CN116247117A (en) | Preparation method of waveguide type photoelectric detector | |
| US11092743B2 (en) | Waveguide absorbers | |
| CN115407531A (en) | Optical waveguide doping structure, manufacturing method thereof and silicon-based electro-optic modulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |