CN1700542A - Semiconductor laser diode - Google Patents

Semiconductor laser diode Download PDF

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Publication number
CN1700542A
CN1700542A CNA2004101049172A CN200410104917A CN1700542A CN 1700542 A CN1700542 A CN 1700542A CN A2004101049172 A CNA2004101049172 A CN A2004101049172A CN 200410104917 A CN200410104917 A CN 200410104917A CN 1700542 A CN1700542 A CN 1700542A
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China
Prior art keywords
coating layer
layer
laser diode
semiconductor laser
refractive index
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Granted
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CNA2004101049172A
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Chinese (zh)
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CN100463314C (en
Inventor
赵秀行
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Samsung Electronics Co Ltd
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Samsung Electro Mechanics Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; CARE OF BIRDS, FISHES, INSECTS; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K61/00—Culture of aquatic animals
    • A01K61/70—Artificial fishing banks or reefs
    • A01K61/78—Arrangements for sinking or mooring thereof
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02B—HYDRAULIC ENGINEERING
    • E02B3/00—Engineering works in connection with control or use of streams, rivers, coasts, or other marine sites; Sealings or joints for engineering works in general
    • E02B3/04—Structures or apparatus for, or methods of, protecting banks, coasts, or harbours
    • E02B3/043—Artificial seaweed
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02B—HYDRAULIC ENGINEERING
    • E02B3/00—Engineering works in connection with control or use of streams, rivers, coasts, or other marine sites; Sealings or joints for engineering works in general
    • E02B3/04—Structures or apparatus for, or methods of, protecting banks, coasts, or harbours
    • E02B3/046—Artificial reefs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Abstract

A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed under the second lower clad layer, wherein a refractive index of the first lower clad layer is identical with a refractive index of the upper clad layer and is lower than a refractive index of the second lower clad layer.

Description

Semiconductor laser diode
Technical field
The present invention relates to a kind of semiconductor laser diode, more particularly, relate to a kind of comprise one deck have asymmetric refractive index coating layer improvement semiconductor laser diode.
Background technology
Usually, semiconductor laser diode has smaller size and less than the required threshold current of the generation laser generation of common lasers threshold current.Therefore, semiconductor laser diode is used for the communications field or uses the phonograph high speed data record of CD and the element that reads as a kind of, has obtained using widely.
Figure 1A is the viewgraph of cross-section of conventional semiconductors laser diode.Figure 1B represents the refraction index profile and the optical field distribution of the semiconductor laser diode of Figure 1A.
Referring to Figure 1A and 1B, the conventional semiconductors laser diode has such structure, and wherein one deck n type coating layer 11, one deck n type ducting layer 12, one deck active layer 30, one deck p type ducting layer 22 and p type coating layer 21 sequentially are deposited on the substrate 10.One deck places between the p type coating layer 21 in order to the etching stopping layer 23 that forms a ridge.One deck p electrode layer 40 is formed on the end face of p type coating layer 21, and one deck n electrode layer 50 is formed on the bottom surface of substrate 10.
Herein, the n type coating layer 11 that is formed at the p type coating layer 21 on the active layer 30 and forms under the active layer 30 has respectively than on the active low refractive index n of the refractive index n of active layer 30 and under the n, and on the refractive index n of p type coating layer 21 with the refractive index n of n type coating layer 11 under identical.
Yet in traditional light storage device, semiconductor laser diode need have less than about 19 ° far field normal beam angle of divergence.Obtain big power output if form thin ducting layer, the semiconductor laser diode that then has above-mentioned structure can not obtain the little far field normal beam angle of divergence.
The one deck that comprises that demonstrates among Fig. 2 A to addressing the above problem has the refraction index profile of the semiconductor laser diode of asymmetric refractive index coating layer.Referring to Fig. 2 A, one deck p type coating layer and one deck n type coating layer are formed at the both sides of one deck active layer respectively, and the refractive index of n type coating layer is higher than the refractive index of p type coating layer.Therefore, to have with the active layer be the asymmetric refractive index at center for p type coating layer and n type coating layer.
Semiconductor laser diode with aforesaid structure has by making the near field disperse to reduce the advantage of the far field normal beam angle of divergence.Yet the remarkable increase of near field asymmetry can cause the laser beam shown in Fig. 2 B to be offset with power output, and reduces in n type coating layer with barrier energy that refractive index is inversely proportional to, causes more charge carrier overflow thus.
Summary of the invention
The invention provides a kind of comprise one have asymmetric refractive index coating layer improvement semiconductor laser diode.
According to an aspect of the present invention, a kind of semiconductor laser diode provided herein comprises: one deck active layer; One deck is formed at the last coating layer on the active layer; One deck is formed at first time coating layer under the active layer; One deck is formed at second time coating layer below the coating layer first time; And one be formed at the substrate below the coating layer second time, and wherein, the refractive index of first time coating layer is identical with the refractive index of last coating layer, and is lower than the refractive index of second time coating layer.
In this case, one deck etching stopping layer can be formed on this in coating layer.
First and second electrode layers are arranged on the end face of coating layer on this respectively and on the bottom surface of this substrate.
This active layer can have a kind of in constructing of Multiple Quantum Well structure and single quantum well.
This active layer can be made up of the compound semiconductor of GaInP series.
Should go up coating layer can be made up of the compound semiconductor of p-AlGaInP series, and these first and second times coating layers can be made up of the compound semiconductor of n-AlGaInP series.
Can further form ducting layer and one deck lower waveguide layer on one deck respectively between active layer and the last coating layer and between active layer and first time coating layer.In this case, last ducting layer and lower waveguide layer can be made up of the compound semiconductor with n-AlGaInP series of p-AlGaInP series respectively.
Description of drawings
By the detailed description of reference accompanying drawing to one exemplary embodiment of the present invention, above-mentioned and further feature of the present invention and advantage will become more obvious.Wherein:
Figure 1A is the viewgraph of cross-section of conventional semiconductors laser diode;
Figure 1B is the refraction index profile of semiconductor laser diode of expression Figure 1A and the curve chart of optical field distribution;
Fig. 2 A is the curve chart of the refraction index profile of the another kind of conventional semiconductors laser diode of expression;
Fig. 2 B is the diagram of skew of laser beam of the semiconductor laser diode of presentation graphs 2A;
Fig. 3 is the viewgraph of cross-section of semiconductor laser diode according to an embodiment of the invention;
Fig. 4 is the refraction index profile of semiconductor laser diode of presentation graphs 3 and the line chart of optical field distribution; And
Fig. 5 is the comparative illustration box-shaped figure (boxplot) of the far field normal beam angle of divergence of semiconductor laser diode and conventional semiconductors laser diode according to an embodiment of the invention.
Embodiment
Hereinafter, a preferred embodiment of the present invention is described with reference to the accompanying drawings.
Semiconductor laser diode is not limited to the following examples according to an embodiment of the invention, and other embodiment that comprises other compound semiconductor materials of III-V family also is feasible.
Fig. 3 is the viewgraph of cross-section of semiconductor laser diode according to an embodiment of the invention.Fig. 4 is the refraction index profile of semiconductor laser diode of presentation graphs 3 and the figure of optical field distribution.
Referring to Fig. 3 and 4, semiconductor laser diode comprises a substrate 110 that is formed by GaAs according to an embodiment of the invention, and under one deck on coating layer 111, one deck active layer 130 and one deck coating layer 121 sequential deposits on substrate 110.Herein, following coating layer 111 is made up of first time coating layer 111a of one deck and second time coating layer 111b of one deck.On the other hand, one deck lower waveguide layer 112 can be formed between active layer 130 and the first time coating layer 111a, and ducting layer 122 can be formed between active layer 130 and the last coating layer 121 on one deck.First electrode layer 140 and the second electrode lay 150 are formed on the end face of coating layer 121 respectively and on the bottom surface of substrate 110.
The refractive index n of second time coating layer 111b Following 2The refractive index n that is higher than first time coating layer 111a Following 1, and second time coating layer 111b formed by one deck compound semiconductor layer.For this reason, the second time coating layer 111b that is formed on the substrate 110 can be by n-(A1 0.68Ga 0.32) 0.5In 0.5The P-compound semiconductor is formed, and being formed at second time first time coating layer 111a on the coating layer 111b can be by n-(Al 0.7Ga 0.3) 0.5In 0.5The P-compound semiconductor is formed.First and second times coating layer 111a and 111b can form by the compound semiconductor of epitaxial growth AlGaInP series on substrate 110, so that change the amount of Al.On the other hand, first and second times coating layer 111a and 111b can be made up of other III-V compound semiconductor.
Lower waveguide layer 112, active layer 130 and last ducting layer 122 orders are formed on the end face of first time coating layer 111a.Herein, the compound semiconductor layer of the refractive index of coating layer and last coating layer 111 and 121 formed under the lower waveguide layer 112 of guided laser vibration and last ducting layer 122 were higher than by refractive index.For this reason, lower waveguide layer 112 and last ducting layer 122 can be respectively by n-(Al 0.5Ga 0.5) 0.5In 0.5P-compound semiconductor and p-(Al 0.5Ga 0.5) 0.5In 0.5The P-compound semiconductor is formed.
The active layer that causes laser generation forms by having the active compound semiconductor layer of refractive index n higher than the refractive index of lower and upper ducting layer 112 and 122.For this reason, active layer 130 is by Ga 0.5In 0.5The P-compound semiconductor is formed.Herein, active layer 130 has Multiple Quantum Well or single quantum well structure.
Be formed at last coating layer 121 on ducting layer 122 end faces by the refractive index n that has with first time coating layer 111a Following 1Identical refractive index n OnCompound semiconductor layer form.For this reason, last coating layer 121 can be by p-(Al 0.7Ga 0.3) 0.5In 0.5The P-compound semiconductor is formed.On the other hand, etching stopping layer 123 can be formed in the coating layer 121, and when etching is carried out on the top of last coating layer 121 so that formed a ridge, needs etching stopping layer 123 accurately to form the ridge with specified altitude assignment.
First electrode layer 140 as the p electrode layer is formed on the end face of coating layer 121, is formed on the bottom surface of substrate 110 as the second electrode lay 150 of n electrode layer.
As mentioned above, in semiconductor laser diode according to an embodiment of the invention, following coating layer 111 is divided into first and second times coating layer 111a and 111b, the refractive index n of second time coating layer 111b Following 2Refractive index n greater than first time coating layer 111a Following 1, the refractive index n of first time coating layer 111a Following 1Refractive index n with last coating layer OnIdentical.As mentioned above, when upper and lower coating layer 121 and 111 has when being the asymmetric refractive index at center with active layer 130, disperse the near field thus so that reduce the far field normal beam angle of divergence.In addition, because first time coating layer 111a has the refractive index identical with the refractive index of last coating layer 121, the reduction degree of light limiting factor can reduce relatively, and is final, and inevitable the advancing the speed of threshold current that increases can have been reduced relatively with the beam divergence angle increase.And,, therefore different with traditional refractive index asymmetric structure because the refractive index of first time coating layer 111a is identical with the refractive index of last coating layer 121.Therefore, can prevent the skew of laser beam, and, therefore the restriction of charge carrier still be carried out effectively because the barrier energy of first time coating layer 111a does not reduce.
Table 1 and Fig. 5 are respectively table and box-shaped figure, wherein contrast demonstrate the conventional semiconductors laser diode that comprises upper and lower coating layer with symmetrical refraction rate and comprise upper and lower coating layer with asymmetric refractive index, the experiment value of the far field normal beam angle of divergence of semiconductor laser diode according to an embodiment of the invention.
Table 1
The mean value (number of degrees) of the far field normal beam angle of divergence Standard deviation
The conventional semiconductors laser diode ??????????21.80° ????1.19
Semiconductor laser diode according to an embodiment of the invention ??????????17.48° ????0.66
Referring to table 1 and Fig. 5, the mean value of the far field normal beam angle of divergence of conventional semiconductors laser diode is 21.80 °, and the mean value of the far field normal beam angle of divergence of semiconductor laser diode is 17.48 ° according to an embodiment of the invention.Therefore, the far field normal beam of semiconductor laser diode is dispersed to disperse than the far field normal beam of conventional semiconductors laser diode and has been reduced about 20% according to an embodiment of the invention.
As mentioned above, semiconductor laser diode has following advantage according to an embodiment of the invention.
At first, be the asymmetric refractive index at center because upper and lower coating layer has with the active layer, therefore by disperseing the near field that the far field normal beam angle of divergence is reduced.
Secondly, coating layer has the refractive index identical with last coating layer under one deck of active layer owing to adjoin in the two-layer coating layer down, so the reduction of light restriction factor reduced relatively, and final threshold current can be reduced.
The 3rd, because the barrier energy of coating layer does not reduce down, therefore the restriction to charge carrier is able to carry out more effectively.
Although showed particularly and described the present invention with reference to its one exemplary embodiment, it will be apparent to those skilled in the art that and to make various variations and not deviate from the spirit and scope of the present invention that limit by following claim it in form and details.

Claims (9)

1, a kind of semiconductor laser diode comprises:
One active layer;
One is formed at the last coating layer on the described active layer;
One is formed at first time coating layer under the described active layer;
One is formed at second time coating layer below described first time coating layer; And
One is formed at the substrate below described second time coating layer,
Wherein, the refractive index of described first time coating layer is identical with the described refractive index that goes up coating layer and be lower than the refractive index of described second time coating layer.
2, semiconductor laser diode as claimed in claim 1, wherein an etching stopping layer is formed at described going up in the coating layer.
3, semiconductor laser diode as claimed in claim 1 wherein is provided with first and second electrode layers respectively on the end face of coating layer and on the bottom surface of described substrate on described.
4, semiconductor laser diode as claimed in claim 1, wherein said active layer have a kind of in multi-quantum pit structure and the single quantum.
5, semiconductor laser diode as claimed in claim 1, wherein said active layer is made up of the compound semiconductor of GaInP series.
6, semiconductor laser diode as claimed in claim 1, the wherein said coating layer of going up is made up of the compound semiconductor of p-AlGaInP series.
7, semiconductor laser diode as claimed in claim 1, wherein said first and second times coating layers are made up of the compound semiconductor of n-AlGaInP series.
8, semiconductor laser diode as claimed in claim 1, wherein described active layer and described between the coating layer and between described active layer and described first time coating layer, further form a ducting layer and a lower waveguide layer on one respectively.
9, semiconductor laser diode as claimed in claim 1, wherein said upward ducting layer and described lower waveguide layer are made up of the compound semiconductor with n-AlGaInP series of p-AlGaInP series respectively.
CNB2004101049172A 2004-05-20 2004-12-24 Semiconductor laser diode Expired - Fee Related CN100463314C (en)

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CN101902016A (en) * 2009-05-27 2010-12-01 索尼公司 Semiconductor laser
CN104466675A (en) * 2014-12-15 2015-03-25 中国电子科技集团公司第十三研究所 Narrow-divergence-angle ridge waveguide semiconductor laser
CN108604773A (en) * 2015-11-09 2018-09-28 奥斯兰姆奥普托半导体有限责任公司 Semiconductor laser diode
CN108879330A (en) * 2017-05-11 2018-11-23 光环科技股份有限公司 Edge-emitting laser element with small vertical emission angle
CN110226268A (en) * 2016-11-29 2019-09-10 莱瑟特尔公司 Binode fibre coupled laser diode and correlation technique
CN112290382A (en) * 2020-12-23 2021-01-29 武汉敏芯半导体股份有限公司 Semiconductor laser and manufacturing method thereof

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CN101902016A (en) * 2009-05-27 2010-12-01 索尼公司 Semiconductor laser
CN104466675A (en) * 2014-12-15 2015-03-25 中国电子科技集团公司第十三研究所 Narrow-divergence-angle ridge waveguide semiconductor laser
CN104466675B (en) * 2014-12-15 2017-08-29 中国电子科技集团公司第十三研究所 Narrow angle of divergence ridge waveguide semiconductor laser
CN108604773A (en) * 2015-11-09 2018-09-28 奥斯兰姆奥普托半导体有限责任公司 Semiconductor laser diode
CN110226268A (en) * 2016-11-29 2019-09-10 莱瑟特尔公司 Binode fibre coupled laser diode and correlation technique
CN108879330A (en) * 2017-05-11 2018-11-23 光环科技股份有限公司 Edge-emitting laser element with small vertical emission angle
CN108879330B (en) * 2017-05-11 2021-08-03 光环科技股份有限公司 Edge-emitting laser element with small vertical emission angle
CN112290382A (en) * 2020-12-23 2021-01-29 武汉敏芯半导体股份有限公司 Semiconductor laser and manufacturing method thereof

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US20050259707A1 (en) 2005-11-24
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JP2005333129A (en) 2005-12-02
CN100463314C (en) 2009-02-18

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Patentee after: Samsung Electronics Co., Ltd.

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Termination date: 20141224

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