CN100428593C - Structure of longwave long vertical cavity face emission laser and producing method - Google Patents
Structure of longwave long vertical cavity face emission laser and producing method Download PDFInfo
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- CN100428593C CN100428593C CNB2006100035877A CN200610003587A CN100428593C CN 100428593 C CN100428593 C CN 100428593C CN B2006100035877 A CNB2006100035877 A CN B2006100035877A CN 200610003587 A CN200610003587 A CN 200610003587A CN 100428593 C CN100428593 C CN 100428593C
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Abstract
A structure of a long wavelength vertical cavity surface emission laser includes: an InP substrate of N type, a buffer layer processed on the substrate, a down Prague reflection mirror on the buffer layer used in reflecting light in the laser cavity to form laser oscillation, an active region set on the down Prague relection mirror to form light gain, an electrode contact layer set on both sides to form fine Ohmic contact, an up Prgue reflection mirror set in the middle of the active region to form an exit window and reflect light in the cavity to form laser oscillation, an electrode P set on top of the electrode contact layer used in injecting current and an electrode N set under the substrate.
Description
Technical field
The present invention is a kind of structure and manufacture method of long-wavelength vertical cavity surface emitting laser, and the combination of having adopted InP layer and air layer is as following distribution Bragg reflector.The invention still further relates to technology and the method for making this structure.
Background technology
Vertical cavity surface emitting laser becomes the focus of optoelectronic areas research because of itself low threshold value, circular light beam, easily coupling and advantage such as easily two dimension is integrated.In Fiber Optical Communication System, dynamically the long wavelength vertical cavity surface of single mode operation emission LASER Light Source is indispensable key element.Be mainly used in middle distance and long distance High-speed data communication and light interconnection, light parallel processing, light recognition system, important use is all arranged in metropolitan area network and wide area network.
The long wavelength as 1.31 μ m and 1.55 mum wavelength near zones, can provide the material of high-gain mainly to be based on the material of InP substrate, but be based on the semiconductor Bragg mirror of InP material because refringence is too little, thermal resistance is too big, can swash the requirement of penetrating so reflectivity is difficult to reach surface-emitting laser.And the Bragg mirror that InP layer and air layer are formed is very big because of its refringence, so can just can reach very high reflectivity by the cycle seldom, it is many to have improved traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector number of plies, thermal resistance is big, be difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
Summary of the invention
The objective of the invention is to, a kind of structure and manufacture method of long-wavelength vertical cavity surface emitting laser are provided, and it is many that it has improved traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector number of plies, and thermal resistance is big, be difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
The manufacture method of a kind of long-wavelength vertical cavity surface emitting laser structure of the present invention is characterized in that this method comprises the steps:
(1) adopt epitaxy technique mocvd method grown buffer layer, distribution Bragg reflector, active area and contact electrode layer down successively on N type InP substrate, the material that wherein descend distribution Bragg reflector to grow is InGaAs supporting layer and InP layer;
(2) form initial graphics by standard photolithography process, form mask with photoresist and carry out protonation, be used for electric current restriction and light restriction;
(3) at first evaporate the materials A uZnAu of P electrode, form mask by standard photolithography process again, corrosion forms P electrode shape and light-emitting window then, carries out Alloying Treatment then;
(4) form the table top mask by standard photolithography process, by the method formation table top of dry etching or wet etching;
(5) attenuate, polishing N type InP substrate, evaporation N electrode carries out Alloying Treatment then below substrate;
(6) form mask by standard photolithography process, be with Bragg mirror on photoresist electron beam cyclotron resonance deposit or the electron beam evaporation, comprise the deielectric-coating Si layer and the SiO in six cycles of deposit successively or evaporation
2Layer is peeled off then to form and is gone up distribution Bragg reflector;
(7) form mask by standard photolithography process,, form air layer,, form distribution Bragg reflector down then through carbon dioxide critical point drying instrument drying by the mid portion of InGaAs supporting layer in the distribution Bragg reflector under the wet method selective etching.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with example and accompanying drawing, describe in detail as after, wherein:
Fig. 1 is the schematic diagram of long wavelength's surface-emitting laser of the present invention;
Fig. 2 is the table top figure that forms by dry etching;
Fig. 3 is Si layer 71 of the present invention and SiO
2The schematic diagram of the last distribution Bragg reflector 7 that layer 72 is formed;
Fig. 4 is the scanning electron microscope diagram of the following distribution Bragg reflector 4 of InP layer 42 of the present invention and air layer 43 formation;
Embodiment
See also shown in Figure 1ly, the structure of a kind of long-wavelength vertical cavity surface emitting laser of the present invention is characterized in that, this structure comprises:
One substrate 2, this substrate 2 are N type InP substrate;
One resilient coating 3, this resilient coating 3 is produced on the substrate 2;
One lower Bragg reflector 4, this lower Bragg reflector 4 is produced on the resilient coating 3, and the light that this lower Bragg reflector 4 is used in the reflector laser chamber forms laser generation; This lower Bragg reflector 4 is made up of the InP layer 42 and the air layer 43 in 3.5 cycles, and wherein each cycle comprises InGaAs supporting layer 41, InP layer 42 and air layer 43; The thickness of this InGaAs supporting layer 41 and air layer 43 is 1/4th of design vacuum centre wavelength, the thickness of InP layer 42 for design vacuum centre wavelength four/again and again divided by its refractive index;
One active area 5, this active area 5 is produced on the lower Bragg reflector 4, is used for forming the gain of light;
One contact electrode layer 6, this contact electrode layer 6 is produced on the both sides on the active area 5, is used for forming good Ohmic contact;
Bragg mirror 7 on one, and Bragg mirror 7 is produced on the centre position on the active area 5 on this, form light window 9 simultaneously, and the light that is used in the reflector laser chamber forms laser generation; Should go up Bragg mirror 7 and comprise 6 cycle Si/SiO
2Multilayer dielectric film 71 and 72;
One P electrode 8, this P electrode 8 be produced on contact electrode layer 6 above, be used for electric current and inject; The material that this P electrode 8 adopts is AuZnAu;
One N electrode 1, this N electrode 1 be produced on substrate 2 below.
Please consult shown in Figure 1ly again, the manufacture method of a kind of long-wavelength vertical cavity surface emitting laser structure of the present invention is characterized in that this method comprises the steps:
(1) adopt the epitaxy technique mocvd method at substrate 2 grown buffer layer successively 3, following distribution Bragg reflector 4, active area 5 and contact electrode layer 6; Wherein the following distribution Bragg reflector 4 in each cycle comprises: InGaAs supporting layer 41, InP layer 42 and air layer 43; The material that this time distribution Bragg reflector 4 is at first grown is InGaAs supporting layer 41 and InP layer 42;
(2) form initial graphics by standard photolithography process, form mask with photoresist and carry out protonation, be used for electric current restriction and light restriction;
(3) at first evaporate the materials A uZnAu of P electrode 8, form mask by standard photolithography process again, corrosion forms P electrode 8 shapes and light-emitting window 9 then, carries out Alloying Treatment then;
(4) form the table top mask by standard photolithography process, by the method formation table top of dry etching or wet etching;
(5) attenuate, polishing N type InP substrate 2, evaporation N electrode 1 carries out Alloying Treatment then below substrate 2;
(6) form mask by standard photolithography process, be with Bragg mirror 7 on photoresist electron beam cyclotron resonance deposit or the electron beam evaporation, comprise the deielectric-coating Si layer 71 and the SiO in six cycles of deposit successively or evaporation
2Layer 72 is peeled off then to form and is gone up distribution Bragg reflector 7; Should go up distribution Bragg reflector 7 is by standard photolithography process, peels off formation behind band photoresist electron beam cyclotron resonance deposit or the electron beam evaporation;
(7) form mask by standard photolithography process,, form air layer 43,, form distribution Bragg reflector 4 down then through carbon dioxide critical point drying instrument drying by the mid portion of wet method selective etching InGaAs layer 41.
Wherein total is to grow by mocvd method.
Wherein form table top by standard photolithography process in conjunction with dry method or wet etching earlier, mesa etch liquid adopts HCl: CH
3COOH: H
2O
2: H
2O=12: 6: 2: 5, the table top that corrosion is obtained was vertical as far as possible, and by the centre position of wet method selective etching InGaAs layer 41, corrosive liquid adopts FeCl again
3: H
2O=2: 1, then through the stable air layer 43 of the dry formation of carbon dioxide critical point drying instrument.
Wherein earlier by standard photolithography process, make with photoresist as mask, the method by protonation realizes that electric current restriction and light limit again.
Embodiment
See also shown in Figure 1ly, the present invention utilizes Si layer 71 and the SiO of 3.5 cycle InP layers 42 and air layer 43 as following 4,6 cycles of distribution Bragg reflector
2Layer 72 deielectric-coating are realized the structure of long wavelength's surface-emitting laser as last distribution Bragg reflector 7.Fig. 1 is long wavelength's surface-emitting laser schematic diagram of the present invention.Comprise N electrode 1, N type InP substrate 2, InP resilient coating 3, following distribution Bragg reflector 4 is made up of the InP layer 42 and the air layer 43 in 3.5 cycles, and wherein each cycle comprises InGaAs supporting layer 41, InP layer 42 and air layer 43, strained quantum well active area 5, P type InGaAs contact electrode layer 6, last distribution Bragg reflector 7 is by the Si layer 71 and the SiO in 6 cycles
2Layer 72 deielectric-coating are formed, and also are light-emitting windows simultaneously, P electrode 8.
The principal character of this structure is as follows:
(1) wherein lower Bragg reflector 4 is made up of the InP layer 42 and the air layer 43 in 3.5 cycles, and wherein each cycle comprises InGaAs supporting layer 41, InP layer 42 and air layer 43;
(2) wherein the thickness of InGaAs supporting layer 41 and air layer 43 is 1/4th of design vacuum centre wavelength, the thickness of InP layer 42 for design vacuum centre wavelength four/again and again divided by its refractive index;
(3) wherein the material of P electrode 8 employings is AuZnAu;
(4) wherein go up Bragg mirror 7 and comprise 6 cycle Si/SiO
2Multilayer dielectric film 71 and 72;
In the epitaxial process of total, adopt the epitaxy technique mocvd method at substrate 2 grown buffer layer successively 3, following distribution Bragg reflector 4 is comprising InGaAs layer 41 and InP layer 42, active area 5 and the contact electrode layer 6 in 3.5 cycles of growing successively.
Form initial graphics by standard photolithography process then, form mask with photoresist and carry out protonation, be used for electric current restriction and light restriction, inject the degree of depth and should be controlled at the active area top, injected the back and adopted high temperature rapid thermal annealing to form high resistance area.
P electrode 8 is made as follows, and at first evaporating materials AuZnAu forms mask by standard photolithography process again, and corrosion forms the electrode shape and the light-emitting window of P electrode 8 then, carries out Alloying Treatment then.
Make before the N electrode 1, at first attenuate, polishing N type InP substrate 2 evaporate N electrode 1 again, carry out Alloying Treatment then.
Last distribution Bragg reflector 7 forms by following method, at first forms the table top mask by standard photolithography process, by the method formation table top of dry etching or wet etching.The table top figure that Fig. 2 forms for dry etching,
The mesa etch formula of liquid is as follows:
HCl∶CH
3COOH∶H
2O
2∶H
2O＝12∶6∶2∶5
Form mask by standard photolithography process again, be with Bragg mirror 7 on photoresist electron beam cyclotron resonance deposit or the electron beam evaporation, comprise the deielectric-coating Si layer 71 and the SiO in six cycles of deposit successively or evaporation
2Layer 72 is peeled off then to form and is gone up distribution Bragg reflector 7.Fig. 3 is the schematic diagram of last distribution Bragg reflector 7
Following distribution Bragg reflector 4 forms by following step, at first form mask by standard photolithography process, by mid portion from the part wet method selective etching InGaAs layer 41 of table top side, form air layer 43, through carbon dioxide critical point drying instrument drying, form distribution Bragg reflector 4 down then.
As follows from table top side wet method selective etching formula of liquid:
FeCl
3∶H
2O＝2∶1
Corrosion depth should be controlled in the 20 μ m, because corrosion depth surpasses 20 μ m, following distribution Bragg reflector 4 potentially unstables that the corrosion back forms, occur deformation easily and cause device failure content with one's lot, etching the back sample should come repeatedly to wash with pure water by the method for liquid displacement, then with the stable air layer 43 of the dry formation of carbon dioxide critical point drying instrument.Fig. 4 is the scanning electron microscope diagram of the following distribution Bragg reflector 4 of InP layer 42 and air layer 43 formation.
Claims (1)
1. the manufacture method of a long-wavelength vertical cavity surface emitting laser structure is characterized in that, this method comprises the steps:
(1) adopt epitaxy technique mocvd method grown buffer layer, distribution Bragg reflector, active area and contact electrode layer down successively on N type InP substrate, the material that wherein descend distribution Bragg reflector to grow is InGaAs supporting layer and InP layer;
(2) form initial graphics by standard photolithography process, form mask with photoresist and carry out protonation, be used for electric current restriction and light restriction;
(3) at first evaporate the materials A uZnAu of P electrode, form mask by standard photolithography process again, corrosion forms P electrode shape and light-emitting window then, carries out Alloying Treatment then;
(4) form the table top mask by standard photolithography process, by the method formation table top of dry etching or wet etching;
(5) attenuate, polishing N type InP substrate, evaporation N electrode carries out Alloying Treatment then below substrate;
(6) form mask by standard photolithography process, be with Bragg mirror on photoresist electron beam cyclotron resonance deposit or the electron beam evaporation, comprise the deielectric-coating Si layer and the SiO in six cycles of deposit successively or evaporation
2Layer is peeled off then to form and is gone up distribution Bragg reflector;
(7) form mask by standard photolithography process,, form air layer,, form distribution Bragg reflector down then through carbon dioxide critical point drying instrument drying by the mid portion of InGaAs supporting layer in the distribution Bragg reflector under the wet method selective etching.
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| CN100428593C true CN100428593C (en) | 2008-10-22 |
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Families Citing this family (14)
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| CN103401142B (en) * | 2013-07-24 | 2015-06-10 | 中国科学院长春光学精密机械与物理研究所 | High-power high-stability single-mode vertical cavity surface emitting semiconductor laser |
| TWI589851B (en) * | 2015-11-20 | 2017-07-01 | 九驊科技股份有限公司 | Optical wavefront measuring device and method |
| CN105429000B (en) * | 2015-11-25 | 2018-11-02 | 武汉电信器件有限公司 | A kind of straight platform ridge waveguide laser chip processing method of high speed |
| CN105576499A (en) * | 2015-12-25 | 2016-05-11 | 福建中科光芯光电科技有限公司 | InP groove corrosion method |
| CN106654848A (en) * | 2016-10-19 | 2017-05-10 | 青岛海信宽带多媒体技术有限公司 | Ridge-waveguide semiconductor laser diode and manufacturing method thereof |
| CN106711762B (en) * | 2017-01-20 | 2019-08-09 | 西北工业大学 | A kind of preparation method of tunable vertical-cavity surface emitting laser |
| CN106711765B (en) * | 2017-02-13 | 2019-02-01 | 江苏华博数控设备有限公司 | A kind of semiconductor laser cladding light-source structure with three hot spots irradiation one-pass molding function |
| CN106654857A (en) * | 2017-03-05 | 2017-05-10 | 北京工业大学 | High-beam-quality large-scale VCSEL in-phase coupled array |
| CN111293583B (en) * | 2020-02-24 | 2021-06-01 | 长春中科长光时空光电技术有限公司 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
| CN111193186A (en) * | 2020-02-28 | 2020-05-22 | 太平洋（聊城）光电科技有限公司 | Vertical cavity surface emitting laser and method of manufacturing the same |
| CN111384666B (en) * | 2020-03-20 | 2021-08-03 | 北京嘉圣光通科技有限公司 | Method for manufacturing vertical cavity surface emitting laser and vertical cavity surface emitting laser |
| CN111884046B (en) * | 2020-07-06 | 2021-11-09 | 武汉光谷量子技术有限公司 | Distributed Bragg reflector and manufacturing method and design method thereof |
| CN113540970B (en) * | 2021-07-16 | 2022-05-17 | 杰创半导体(苏州)有限公司 | VCSEL chip, manufacturing method and laser chip |
| CN113937195B (en) * | 2021-08-28 | 2023-07-14 | 北京工业大学 | Micro-pattern light source based on resonant cavity light-emitting diode |
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| US20030128733A1 (en) * | 2002-01-09 | 2003-07-10 | Tan Michael Renne Ty | Vertical-cavity surface-emitting laser including a supported airgap distributed Bragg reflector |
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| US20030128733A1 (en) * | 2002-01-09 | 2003-07-10 | Tan Michael Renne Ty | Vertical-cavity surface-emitting laser including a supported airgap distributed Bragg reflector |
Non-Patent Citations (2)
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| High temperature continuous-wave operation of 1.3-1.55mmVCSELs with InP/air-gap DBRs. Chao-Kun Lin, et al.IEEE. 2002 * |
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