CN106654848A - Ridge-waveguide semiconductor laser diode and manufacturing method thereof - Google Patents
Ridge-waveguide semiconductor laser diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN106654848A CN106654848A CN201610911201.6A CN201610911201A CN106654848A CN 106654848 A CN106654848 A CN 106654848A CN 201610911201 A CN201610911201 A CN 201610911201A CN 106654848 A CN106654848 A CN 106654848A
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- Prior art keywords
- ridge waveguide
- layer
- ridge
- metallic radiating
- radiating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a ridge-waveguide semiconductor laser diode and manufacturing method thereof in order to solve the problem in the prior art that the transmission of the drive current by a ridge-waveguide semiconductor laser diode leads to the breakdown of the ridge-waveguide semiconductor laser diode due to the too hot temperature at its local parts. The ridge-waveguide semiconductor laser diode comprises a ridge waveguide formed on a substrate wherein all surfaces of the ridge waveguide are covered by a first metal heat radiation layer. The top face and the side face of the first metal heat radiation layer are covered by a second metal heat radiation layer. Since all surfaces of the ridge waveguide are covered by a first metal heat radiation layer, the first metal heat radiation layer enlarges the radiation size of the ridge-waveguide semiconductor laser diode so that the first metal heat radiation layer can transmit the heat generated from the ridge-waveguide semiconductor laser diode effectively and that possible explosion of the ridge-waveguide semiconductor laser diode caused by the too hot temperature can be prevented.
Description
Technical field
The present embodiments relate to communication technical field, more particularly to a kind of laser diode having ridge portion and its
Preparation method.
Background technology
The ridged waveguide structure of laser diode having ridge portion is generally arranged at the top of active layer, for conducting
Driving current, ridged waveguide structure produces heat in the laser diode course of work, if the temperature of ridged waveguide structure is too high
Laser diode can be caused burns phenomenon to death.
The laser semiconductor material (such as P contacts) inside laser diode is primarily due in the too high feelings of temperature
Under condition, defect first occur causes the zone current excessive, and laser semiconductor material electric current is excessive, the pole of further improving laser two
What the temperature of pipe caused laser instrument burns phenomenon to death.
To sum up, exist in prior art ridge waveguide laser diodes transmission driving current when, because local temperature it is too high,
The technical problem for causing ridge waveguide diode easily breakdown.
The content of the invention
The present invention provides a kind of laser diode having ridge portion and preparation method thereof, to solve prior art in
During the ridge waveguide laser diodes transmission driving current of presence, because local temperature is too high, cause ridge waveguide diode easy
Breakdown technical problem.
The embodiment of the present invention provides a kind of ridge waveguide laser diodes, including：
The ridge waveguide being formed on substrate base；
Wherein, it is coated with the first metallic radiating layer on all surface of the ridge waveguide；First metallic radiating layer
Top surface and side be coated with the second metallic radiating layer.
The embodiment of the present invention provides a kind of preparation method of ridge waveguide laser diodes, including：
Ridge waveguide is formed on substrate base by photoetching process；
The first metallic radiating layer is electroplated on all surface of the ridge waveguide；
In the top surface and side the second metallic radiating layer of deposition of first metallic radiating layer.
In the embodiment of the present invention, after ridge waveguide is prepared, increase by an electroplating technology, in the whole surface of ridge waveguide
One layer of plating is used for the first metallic radiating layer of radiating, and the first metallic radiating layer is coated with all surface of ridge waveguide, makes
Ridge waveguide laser diodes have sufficiently large area of dissipation, and the first metallic radiating layer can effectively by ridge waveguide laser two
The heating of pole pipe is conducted, and then avoids ridge waveguide laser diodes because of the too high and quick-fried point of temperature.
Description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for description, with present invention enforcement
Example is used to explain the present invention together, is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is a kind of structural representation in ridge waveguide laser diodes section provided in an embodiment of the present invention；
Fig. 2 is that a kind of method flow of the preparation method of ridge waveguide laser diodes provided in an embodiment of the present invention is illustrated
Figure；
Fig. 3 to Fig. 6 is a kind of structural representation of ridge waveguide laser diodes provided in an embodiment of the present invention；
Fig. 7 is a kind of ridge waveguide laser diodes provided in an embodiment of the present invention and ridge waveguide laser in prior art
The contrast schematic diagram of diode.
Specific embodiment
In order that technical problem solved by the invention, technical scheme and it is effective become more apparent, below in conjunction with
Figure of description is illustrated to the preferred embodiments of the present invention, it will be appreciated that preferred embodiment described herein is only used for
The description and interpretation present invention, is not intended to limit the present invention.And the embodiment and reality in the case where not conflicting, in the application
Applying the feature in example can be mutually combined.
Find in the invention for solving this problem, solution ridge waveguide laser diodes local temperature is too high in prior art,
During the technical problem for causing ridge waveguide diode easily breakdown, improvement as far as possible is prepared in the semi-conducting material of ridge waveguide
The defect probability too high to reduce laser diode temperature.For example, the region of defect is susceptible in ridged waveguide structure, such as
The regional area of side wall plates metal, and the metal can distribute the heat that defect area is produced.But only in ridged ripple
The regional area plating metal led, is limited to metal deposit angle, the limited metal thickness in deposition, it is easy to aging.For
Often because of the problem of the too high and quick-fried point of local temperature, the inventor of the embodiment of the present invention has found ridge waveguide laser diodes Jing, half
Conductor material is susceptible to defect area, is not the too high main cause of laser diode local temperature, laser diode office
Temperature too high main cause in portion's is likely to lack heat abstractor, or area of dissipation is too small.This is because, the pole of laser two
When long-time is passed through driving current, the heating temp inside laser diode is gradually accumulated the active layer of pipe, when the pole of laser two
The temperature of pipe continues to rise to a certain degree just cause occur defect in semi-conducting material, and the defect that semi-conducting material is produced adds
Play, causes the quick-fried point of laser diode, if before defects from semiconductor materials aggravates, taking effective cooling measure, will press down
The development of defects of semi-conducting material processed.Based on this discovery of inventor, the embodiment of the present invention provides a kind of with heat abstractor
Ridged waveguide structure, effectively laser diode can be radiated, so reduce ridge waveguide diode because local temperature
Spend high and breakdown probability.
The embodiment of the present invention provides a kind of ridge waveguide laser diodes structure, as shown in figure 1, including：It is formed at substrate
Ridge waveguide 300 on substrate 200；
Wherein, the first metallic radiating layer 330 is coated with all surface of the ridge waveguide 300；First metal
The top surface of heat dissipating layer 330 and side are coated with the second metallic radiating layer 340.
In the embodiment of the present invention, ridge waveguide 300 in addition to including top surface and two sides, also including bottom surface, bottom surface
It is the plane of flattening of the ridged waveguide structure in substrate base upper surface.Substrate base 200 also includes other structures, such as active layer, bag
Tegillum etc., the emphasis because not being the embodiment of the present invention, omits its particular content herein.
In the embodiment of the present invention, in order that ridge waveguide laser diodes have sufficiently large area of dissipation, ridge is being prepared
After shape waveguide, increase by an electroplating technology, electroplate one layer of first metal for being used for radiating in the whole surface of ridge waveguide 300 and dissipate
Thermosphere 330, is coated with the first metallic radiating layer 330 on all surface of ridge waveguide 300, the first metallic radiating layer 330 can have
The heating by the laser diode of ridge waveguide 300 of effect is conducted, and then avoids the laser diode of ridge waveguide 300 because of temperature
It is too high and quick-fried point.
Further, first heat dissipation metal is covered on the top surface of the ridge waveguide 300, bottom surface and all sides
Layer 330, first metallic radiating layer 330 is formed by plating mode.
Further, the thickness of first metallic radiating layer 330 is 200nm-500nm, it is preferred that first metal
The thickness of heat dissipating layer 330 is 400nm.
The material of first metallic radiating layer 330 is golden (Au), and the heat-conducting effect of gold is significantly, or other heat conduction
The performance preferably and easily metal of deposition.
Specifically, the ridge waveguide 300 includes the strip ridged 310 being formed on the substrate base 200, the bar
Shape ridged 310 is the bottom of the strip ridged 310 by being lithographically formed to the contact layer on the substrate base 200
Layer of metal layer 320 is also covered with face, as shown in Figures 4 to 6.The metal level 320 is Ti-Pt-Au, and the metal level 320 can
Deposited using physical vaporous deposition, the target of selection is alloy target material Ti-Pt-Au, other modes deposition, such as electricity may also be employed
Plating.The thickness of the metal level 320 is 400-500nm, and it functions as the protective layer of ridge waveguide 300, prevents subsequent handling
Chemical etching liquid the bottom surface of ridge waveguide 300 is corroded.
The thickness of the second metallic radiating layer 340 is 1.2-1.7 μm, and material is that gold, or other heat conductivilitys are preferable
And the metal for easily depositing, the protecting film for functioning as the first metallic radiating layer 330 of the second metallic radiating layer 340, the second gold medal
Category heat dissipating layer 340 is wrapped in top surface and the side of the first metallic radiating layer 330, weakens the top surface of the first metallic radiating layer 330 and side
The rate of ageing in face.
Above-mentioned substrate base 200 is InP, and the ridge waveguide 300 is InGaAsP.
Based on identical inventive concept, the embodiment of the present invention provides a kind of preparation method of ridge waveguide laser diodes,
As shown in Fig. 2 including：
Step 201, by photoetching process ridge waveguide 300 is formed on substrate base 200；
Step 202, electroplates the first metallic radiating layer 330 on all surface of the ridge waveguide 300；
Step 203, in the top surface and side the second metallic radiating layer 340 of deposition of first metallic radiating layer 330.
In said method flow process, in order to increase the area of dissipation of the laser diode of ridge waveguide 300, ridge waveguide is being prepared
After 300, increase by an electroplating technology, in the whole surface of ridge waveguide 300 one layer of first heat dissipation metal for being used for radiating is electroplated
Layer 330, is coated with the first metallic radiating layer 330 on all surface of ridge waveguide 300, the first metallic radiating layer 330 can be effective
The heating by the laser diode of ridge waveguide 300 conduct, and then avoid the laser diode of ridge waveguide 300 because of temperature mistake
High and quick-fried point.
In above-mentioned steps 201, the substrate base 200 is InP, and the ridge waveguide 300 is InGaAsP.
In step 201, the structure of ridge waveguide 300 is formed on substrate by etching technics, including：
In the upper surface depositing contact layers of the substrate base 200, the material of contact layer selects InGaAsP；
Photoresist is coated on the contact layer, photoetching is carried out to the contact layer, form strip ridged 310；
Continue to deposit layer of metal layer 320 in the bottom surface of the strip ridged 310 using physical vaporous deposition；
The photoresist is removed, the ridge waveguide 300 is obtained.
Wherein, the structure of the ridge waveguide 300 that step 201 is formed is referring to Fig. 3.
Optionally, as shown in figure 4, the bottom surface deposition layer of metal layer 320 of the strip ridged 310 of ridge waveguide 300, metal
Layer 320 is Ti-Pt-Au, and thickness is 400-500nm, and it functions as the protective layer of ridge waveguide 300, prevents subsequent handling
Chemical etching liquid the bottom surface of ridge waveguide 300 is corroded.
In step 202, the first metallic radiating layer 330 is electroplated on all surface of the ridge waveguide 300, including：
The ridge waveguide 300 is powered, top surface, the bottom surface and all sides plating in the ridge waveguide 300
First metallic radiating layer 330.Referring to Fig. 5, first metallic radiating layer 330 on the surface of ridge waveguide 300, the first heat dissipation metal
Layer 330 wraps up all surface of ridge waveguide 300, i.e. top surface, bottom surface and all sides, and the first metallic radiating layer 330 is wrapped completely
The surface of ridge waveguide 300 is rolled in, the radiating surface size of ridge waveguide 300 is elongated, provides for the laser diode of ridge waveguide 300
Enough area of dissipations, the first metallic radiating layer 330 can effectively by the heat of the generation of the laser diode of ridge waveguide 300
Conduct, and then fundamentally avoid the laser diode of ridge waveguide 300 because of the too high and quick-fried point of temperature.
In addition, depositing the first metallic radiating layer 330 by the way of plating, figure operation is opened because gold-tinted room need not be carried out, compared with
Traditional craft of gilding saves man-hour, in addition, traditional approach is because be limited to metal deposit angle problem, it is more difficult to realize in whole piece ridge
Realize the effect of control sidewall thickness in shape waveguide 300, and the step of embodiment of the present invention 202 by the way of electroplating using depositing the
One metallic radiating layer 330, it is possible to achieve the quickly and easily gold-plated effect of side wall.
In step 202, it is preferred that the thickness of first metallic radiating layer 330 is 400nm so that ridge waveguide 300 is tied
The coat of metal of structure side wall increases 400nm compared with traditional approach.Only easily there is defect on the surface of ridge waveguide 300 in traditional
Regional area be coated with metal level 320, the purpose of effective radiating can not be reached.
In step 203, figure is re-started out, in the top surface and side the second gold medal of deposition of first metallic radiating layer 330
Category heat dissipating layer 340, referring to Fig. 6.The thickness of the second metallic radiating layer 340 is 1.2-1.7um, and material is gold, the second heat dissipation metal
The protecting film for functioning as the first metallic radiating layer 330 of layer 340, the second metallic radiating layer 340 is wrapped in the first metal and dissipates
The top surface of thermosphere 330 and side, weaken the rate of ageing of the top surface of the first metallic radiating layer 330 and side.
As shown in fig. 7, (1) in Fig. 7 is using the way of prior art, the ridge waveguide of preparation, the top of ridge waveguide
The regional area plating layer of metal of face and side, only in the regional area plating layer of metal on ridge waveguide surface, for changing as far as possible
Defect in kind ridge waveguide material, because the metal of local plating is easy to the aging referring in Fig. 7 of the metal aging, local is plated
(3), so, ridge waveguide laser diodes it is also possible to because temperature it is too high and breakdown.(2) in Fig. 7 are present invention employing
The present invention above-mentioned preparation method prepare ridge waveguide laser diodes local terrace figure, the whole side of ridge waveguide and
Top surface has wrapped up the first metallic radiating layer, and the first metallic radiating layer possesses enough area of dissipations, because of the whole side of ridge waveguide
Face and top surface have wrapped up the first metallic radiating layer, and the side of the first metallic radiating layer and being partially or fully coated with for top surface
Second metallic radiating layer, can delay the aging of ridge waveguide laser diodes, (4) in Fig. 7 for the application ridge waveguide table
The aging image of face metallic radiating layer, it can be seen that make the catabiosis of ridge waveguide surface metal unobvious, this is because ridge
Shape waveguide laser diode is always maintained at good radiating state, so as to fundamentally solve dissipating for ridge waveguide laser diodes
Heat problem, therefore first heat radiating metallic layer on the ridge waveguide surface of the application, are conducive to keeping ridge waveguide laser diodes
Performance stability, it is to avoid ridge waveguide laser diodes are because of the too high and quick-fried point of temperature.
, but those skilled in the art once know basic creation although preferred embodiments of the present invention have been described
Property concept, then can make other change and modification to these embodiments.So, claims are intended to be construed to include excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (10)
1. a kind of ridge waveguide laser diodes, it is characterised in that include：
The ridge waveguide being formed on substrate base；
Wherein, it is coated with the first metallic radiating layer on all surface of the ridge waveguide；The top of first metallic radiating layer
Face and side are coated with the second metallic radiating layer.
2. ridge waveguide laser diodes as claimed in claim 1, it is characterised in that the top surface of the ridge waveguide, bottom surface
With cover first metallic radiating layer on all sides, first metallic radiating layer is formed by plating mode.
3. ridge waveguide laser diodes as claimed in claim 1, it is characterised in that the thickness of first metallic radiating layer
For 300nm-500nm.
4. ridge waveguide laser diodes as claimed in claim 1, it is characterised in that the ridge waveguide includes being formed at institute
The strip ridged on substrate base is stated, the strip ridged is by being lithographically formed to the contact layer on the substrate base
, it is coated with layer of metal layer on the bottom surface of the strip ridged.
5. ridge waveguide laser diodes as any one of Claims 1-4, it is characterised in that the substrate base
For InP, the substrate base is InP, and the ridge waveguide is InGaAsP.
6. a kind of preparation method of ridge waveguide laser diodes, it is characterised in that include：
Ridge waveguide is formed on substrate base by photoetching process；
The first metallic radiating layer is electroplated on all surface of the ridge waveguide；
In the top surface and side the second metallic radiating layer of deposition of first metallic radiating layer.
7. preparation method as claimed in claim 6, it is characterised in that electroplate first on all surface of the ridge waveguide
Metallic radiating layer, including：
The ridge waveguide is powered, the top surface, bottom surface and all sides in the ridge waveguide electroplates first gold medal
Category heat dissipating layer.
8. preparation method as claimed in claim 6, it is characterised in that the thickness of first metallic radiating layer is 300nm-
500nm。
9. preparation method as claimed in claim 6, it is characterised in that
Ridged waveguide structure is formed on substrate by etching technics, including：
In the upper surface depositing contact layers of the substrate base；
Photoresist is coated on the contact layer, photoetching is carried out to the contact layer, form strip ridged；
Continue to deposit layer of metal layer in the bottom surface of the strip ridged using physical vaporous deposition；
The photoresist is removed, the ridge waveguide is obtained.
10. the preparation method as any one of claim 6 to 9, it is characterised in that the substrate base is InP, described
Ridge waveguide is InGaAsP.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610911201.6A CN106654848A (en) | 2016-10-19 | 2016-10-19 | Ridge-waveguide semiconductor laser diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610911201.6A CN106654848A (en) | 2016-10-19 | 2016-10-19 | Ridge-waveguide semiconductor laser diode and manufacturing method thereof |
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| CN106654848A true CN106654848A (en) | 2017-05-10 |
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| CN201610911201.6A Pending CN106654848A (en) | 2016-10-19 | 2016-10-19 | Ridge-waveguide semiconductor laser diode and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114035270A (en) * | 2021-11-08 | 2022-02-11 | 浙江光特科技有限公司 | Method for optimizing metal etching and improving device performance |
| CN117954957A (en) * | 2024-03-25 | 2024-04-30 | 度亘核芯光电技术(苏州)有限公司 | Heat abstractor and semiconductor laser |
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