CN105047622B - Heat transfer structure, manufacturing method thereof and heat dissipation method thereof - Google Patents
Heat transfer structure, manufacturing method thereof and heat dissipation method thereof Download PDFInfo
- Publication number
- CN105047622B CN105047622B CN201410561941.2A CN201410561941A CN105047622B CN 105047622 B CN105047622 B CN 105047622B CN 201410561941 A CN201410561941 A CN 201410561941A CN 105047622 B CN105047622 B CN 105047622B
- Authority
- CN
- China
- Prior art keywords
- heat
- conducting layer
- metal heat
- microwell plate
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000012546 transfer Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000017525 heat dissipation Effects 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 230000002262 irrigation Effects 0.000 claims description 5
- 238000003973 irrigation Methods 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 18
- 239000000956 alloy Substances 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003490 calendering Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910001261 rose's metal Inorganic materials 0.000 description 2
- 229910000634 wood's metal Inorganic materials 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QGTHALAWFUFVCU-UHFFFAOYSA-L n,n-dimethylcarbamodithioate;lead(2+) Chemical compound [Pb+2].CN(C)C([S-])=S.CN(C)C([S-])=S QGTHALAWFUFVCU-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Abstract
The invention relates to a heat transfer structure, a manufacturing method thereof and a heat dissipation method thereof, which are used for solving the defect that the heat dissipation effect is poor due to serious cracks caused by severe volume change along with the change of heat source temperature when well-known alloy is used in a heat dissipation assembly. The heat transfer structure of the present invention comprises: a microporous plate; and the metal heat conduction layer is in contact with the microporous plate and the heat source, a plurality of convex parts correspondingly extend into the through holes and are combined at the inner edges of the through holes, and after the metal heat conduction layer absorbs heat, heat energy is conducted to the microporous plate through the convex parts. Therefore, the metal heat conduction layer is matched with the microporous plate for use, and the influence of cracks in the heat dissipation process is improved due to the fact that the heat conduction area is increased, so that the heat conduction structure has a good heat dissipation effect.
Description
Technical field
The present invention relates to a kind of heat transfer structure, its manufacture method and its heat dissipating method, more particularly to micro- using being incorporated in
Metal heat-conducting layer contact thermal source on orifice plate, strengthen the heat-conducting effect at interface through the good metal heat-conducting layer of thermal conductivity, so as to carry
Rise the radiating rate of thermal source.
Background technology
Heat generation element is easy for causing to send out due to being constantly be generated heat during use in the case of overheat
The degradation of hot element, such as optical characteristics declines or electrical characteristics decline.Therefore, need to be by heat dissipation element by heat generation
Thermal conductivity is fallen caused by element, and general heat dissipation element can use the thing of such as metallic plate and radiating fin with heat sinking function
Part.However, with the progress in epoch, 3C Product gradually pursues high-performance and frivolous outward appearance, therefore its heat dissipation design becomes more and more important,
Traditional heat-dissipating fin volume is excessive and too heavy, is unfavorable for using, and can only be radiated with light sheet, and high-performance thin radiating fins meet
This demand trend.
But light sheet is limited to procedure, its flatness can not show a candle to bulk, and contact point imports a large amount of holes because of interface
And reduce, (coefficient of heat conduction of air layer is 0.024W/mK) easily forms heat alluvial at hole, causes serious thermal resistance, thermal source
Temperature makes light sheet radiating effect not reach expection with raising.The interfacial air thermal resistance of light sheet is bigger than bulk, and reason is
Thermal source contacts not exclusively with the light sheet to radiate, and contact area is bigger, and hot alluvial problem is more serious.Past utilizes thermal grease
Fill up interface hole, high polymer material easily deterioration heated for a long time, service life only 1~3 year, its coefficient of heat conduction about 2~5W/
MK, though it is higher than air, but still not as good as the capacity of heat transmission of metal heat-conducting layer (such as alloy material).But between thermal source and radiating
Metal heat-conducting layer between light sheet, because its thermal coefficient of expansion is larger, easily changes with heat source temperature and produce violent volume and become
Change, so as to produce serious cracks influence radiating effect, so causing metal heat-conducting layer not to be used as thermal source and radiating largely
Light sheet between heat-conducting medium.Therefore, the present invention, which essentially consists in, improves the problem of foregoing.
The content of the invention
Thus, the present invention proposes a kind of heat transfer structure, for contacting a thermal source, includes:One microwell plate, there is multiple pass through
Perforation;One metal heat-conducting layer, there is one first contact surface and one second contact surface, and first contact surface is used to contact the micropore
Plate, second contact surface are used to contact the thermal source, and the metal heat-conducting layer has multiple convex portions correspondingly to stretch into the through hole,
And it is incorporated in the through hole inner edge.
Wherein, the metal heat-conducting layer choosing is from bismuth, tin, lead, copper, indium, cadmium, thallium, nickel, germanium, silver, antimony, gallium, indium, potassium and sodium
In at least two, and the fusing point of the metal heat-conducting layer is between 6 DEG C to 140 DEG C.
Wherein, the aperture of the through hole is between 10 microns to 90 microns.
Wherein, the section of the through hole is in hourglass shape or upright triangle.
Wherein, the microwell plate has a surface contacted with first contact surface, and the surface is rough surface or tool
There is the surface of more irrigation canals and ditches.
The present invention proposes a kind of manufacture method of the heat transfer structure simultaneously, comprises the following steps:A. the microwell plate is made
It is in contact with the first contact surface of the metal heat-conducting layer;B. make the metal heat-conducting layer heat absorption melting and produce the convex portion and ooze
Enter in the through hole.
In stepb, the second contact surface of the metal heat-conducting layer is in contact with the thermal source, and absorbs the thermal source institute
The heat energy of release.
In stepb, the second contact surface of the metal heat-conducting layer is in contact with the thermal source, and the thermal source is a base
Plate, the microwell plate to contact with each other, the metal heat-conducting layer are inserted in a heating unit with the substrate and heated, the gold
Category heat-conducting layer absorbs the heat energy that the heating unit is provided.
Wherein, the heating unit is baking oven or oven.
In stepb, further the microwell plate is made to be fitted with the metal heat-conducting layer with pressuring method.
In step, the metal heat-conducting layer is with the laminar or powdered contact microwell plate.
The present invention proposes a kind of heat dissipating method of the heat transfer structure simultaneously, comprises the following steps:A. lead the metal
Second contact surface of thermosphere contacts the thermal source;B. after metal heat-conducting layer heat absorption, the convex portion is by thermal energy conduction to described
Microwell plate, radiated by the microwell plate.
Wherein, the fusing point of the metal heat-conducting layer is higher than the temperature of the thermal source, and the metal heat-conducting layer is in solid-state.
Wherein, the fusing point of the metal heat-conducting layer is less than the temperature of the thermal source, and the metal heat-conducting layer heat absorption melting is simultaneously
Insert multiple through holes of the microwell plate.
Beneficial effects of the present invention:
1. the heat transfer structure of the present invention, because the metal heat-conducting layer collocation microwell plate use adds thermal conductive surface
Product, therefore influence of the crackle area to heat-conducting effect caused by metal heat-conducting layer described in radiation processes can be neglected;Furthermore
The gap of the metal heat-conducting layer cracks can connect to form thermal convection current passage with the through hole on the microwell plate, will be heated swollen
Swollen air is taken out of, and the present invention takes away heat with convection current and heat exchange pattern simultaneously, and making up heat transfer using hot-air convection dissipates
The deficiency of heat, break through conventional practice, and utilize the gap of incomplete contact between as heat dissipation channel, can be described as allowing interface gap with
The radiating sheet material of crackle, the blocking phenomenon to heat transfer such as interfacial air layer can be improved, make the metal heat-conducting layer not by crackle
Influence its heat-conducting effect.
2. the present invention heat transfer structure, by the metal heat-conducting layer arrange in pairs or groups the microwell plate use, make thermal coefficient of expansion big
The metal heat-conducting layer during rising-heat contracting-cold with more extend space, can disperse expand caused by change in size,
And more through hole dispersion effects is better, so as to reduce the cracking severity of the metal heat-conducting layer, this design can make institute
It is more to state the range of choice of metal heat-conducting layer, is not only restricted to its thermal coefficient of expansion.
3. the heat transfer structure of the present invention, during use, if the temperature of the thermal source is higher than the metal heat-conducting layer
Fusing point and when to make it be in molten, the metal heat-conducting layer can run through because capillarity etc. is incorporated in the multiple of the microwell plate
Hole inner edge, will not arbitrarily flow and overflow goes out the microwell plate;In addition, the metal heat-conducting layer of molten can more be bonded it is described
Thermal source and the microwell plate, because the thermal source and the micropore plate surface are difficult to be substantially parallel, therefore the present invention will be by that will melt
The metal heat-conducting for melting shape is placed between the thermal source and the microwell plate, make the thermal source and the micropore plate surface from
Point contact switchs to face contact, rolls up heat output, even if after cooling and solidifying, the metal heat-conducting layer remains to the contact of maintenance face.
4. the present invention heat transfer structure, the metal heat-conducting layer with the microwell plate during being bonded, the metal
The air coated between heat-conducting layer and the microwell plate can be overflowed by multiple through holes of the microwell plate, to avoid being coated on
Bubble between the metal heat-conducting layer and the microwell plate can form focus, cause radiating effect bad.
Brief description of the drawings
Fig. 1 is the structural representation of first embodiment of the invention.
Fig. 2 is the partial structural diagram of first embodiment of the invention.
Fig. 3 is that the section of through hole of the present invention is in the partial structural diagram of upright triangle.
Fig. 4 is that the surface of microwell plate of the present invention is the partial structural diagram on the surface with more irrigation canals and ditches.
Fig. 5 is that metal heat-conducting layer of the present invention uses schematic diagram in solid-state.
Fig. 6 uses schematic diagram for what metal heat-conducting layer of the present invention was in a liquid state.
Wherein
(1) microwell plate
(11) through hole
(12) surface
(2) alloy
(21) first contact surfaces
(22) second contact surfaces
(23) convex portion
(A) thermal source
Embodiment
Summary technical characteristic, heat transfer structure of the present invention, its manufacture method and its heat dissipating method mainly have
Beneficial effect can clearly appear from the following embodiments.
The first embodiment of heat transfer structure of the present invention is referred to shown in Fig. 1 and Fig. 2, including:One microwell plate 1, having can be with
Multiple through holes 11 of capillarity are produced, the aperture of the through hole 11 described is passed through between 10 microns to 90 microns
The section of perforation 11 be in hourglass shape, and the section of the through hole 11 also can in upright triangle (please refer to Fig. 3) or
Other shapes, it is not limited;One metal heat-conducting layer 2, there is one first contact surface 21 and one second contact surface 22, and described first
Contact surface 21 is used for the surface 12 for contacting the microwell plate 1, and the surface 12 is in the present embodiment rough surface, and described
Surface 12 or the surface (please refer to Fig. 4) with more irrigation canals and ditches, the surface 12 is rough surface in the present embodiment,
It can be LED electronic products, liquid crystal module or other need that second contact surface 22, which is used to contact thermal source an A, the thermal source A,
The product of radiating, the metal heat-conducting layer 2 has multiple convex portions 23 are corresponding to stretch into the through hole 11, and is incorporated in the through hole
11 inner edges.It should be strongly noted that the design and the surface roughness of the microwell plate 1 of the section configuration of the through hole 11
Or the design of irrigation canals and ditches, it the contact area between the metal heat-conducting layer 2 and the microwell plate 1 is become big, substantial increase heat transfer
Amount, so as to which heat-transfer effect be substantially improved.
The metal heat-conducting layer 2 in bismuth, tin, lead, copper, indium, cadmium, thallium, nickel, germanium, silver, antimony, gallium, indium, potassium and sodium extremely
It is few two kinds, and the fusing point of the metal heat-conducting layer is preferably between 40 DEG C to 100 DEG C between 6 DEG C to 140 DEG C.It is described
Metal heat-conducting layer 2 can use Rose's metal (Rose's metal) (contain 50% bismuth, 25% lead and 25% tin,
98 DEG C of fusing point), Cerrosafe (contain 42.5% bismuth, 37.7% lead, 11.3% tin and 8.5% cadmium, 74 DEG C of fusing point),
Wood's metal (Wood's metal) (containing 50% bismuth, 26.7% lead, 13.3% tin and 10% cadmium, 70 DEG C of fusing point),
Field's metal (containing 32.5% bismuth, 16.5% tin and 51% indium, 62 DEG C of fusing point), Cerrolow 136 (contain 49%
Bismuth, 18% lead, 12% tin and 21% indium, 58 DEG C of fusing point), Cerrolow 117 is (containing 44.7% bismuth, 22.6%
Lead, 8.3% tin, 19.1% indium and 5.3% cadmium, 47.2 DEG C of fusing point), Ledate tin cadmium formula thallium (containing 40.3% bismuth,
22.2% lead, 10.7% tin, 17.7% indium, 8.1% cadmium and 1.1% thallium, 41.5 DEG C of fusing point), low-temperature lead-free weldering
Tin (contain 42% tin and 58% bismuth, 138 DEG C of fusing point), SN100C Pb-free solders (containing 99.245% tin, 0.7% copper,
0.05% nickel and 0.005% germanium), inexpensive Pb-free solder (contain 99.3% tin and 0.7% copper), general Pb-free solder
(contain 99% tin, 0.7% copper and 0.3% silver), conventional Pb-free solder are (containing 96.5% tin, 3% silver and 0.5%
Copper), lattice is thinner and during low temperature the good Pb-free solder of performance (containing 96.2% tin, 2.5% silver, 0.8% copper and 0.5%
Antimony), gallium indium liquid alloy (contain 90% gallium and 10% indium, 17.2 DEG C of fusing point), gallium indium liquid alloy (containing 80% gallium and
20% indium, 16.7 DEG C of fusing point) or sodium-potassium eutectic (containing 56% potassium and 44% sodium, 6.8 DEG C of fusing point) etc..
The manufacture method of the first embodiment of heat transfer structure of the present invention has two kinds, and the first manufacture method includes following step
Suddenly:A. the thermal source A is the substrate of a LED electronic products, the second contact surface 22 of the metal heat-conducting layer 2 is contacted the base
Plate, then the microwell plate 1 is in contact with the first contact surface 21 of the metal heat-conducting layer 2, wherein the metal heat-conducting layer 2 can
The microwell plate 1 is contacted in a manner of laminar or be powdered;B. by the running of the LED electronic products, the substrate is made
Temperature be gradually increasing, and the substrate temperature be higher than the metal heat-conducting layer 2 fusing point when, the metal heat-conducting layer 2
Heat absorption melts and produces the convex portion 23 and penetrate into the through hole, to be incorporated on the microwell plate 1, while can also make cladding
Air between the microwell plate 1 and the metal heat-conducting layer 2 is overflowed by the through hole 11 of the microwell plate 1, to avoid wrapping
The bubble overlayed between the metal heat-conducting layer 2 and the microwell plate 1 can form focus, cause radiating effect bad, then again
The metal heat-conducting layer 2 is set more closely to be bonded with the microwell plate 1 in a manner of pressurizeing and clamp.
Second of manufacture method of the first embodiment of heat transfer structure of the present invention, then comprise the following steps:A. the thermal source A
For the substrate of a LED electronic products, the second contact surface 22 of the metal heat-conducting layer 2 is set to contact the substrate, then make described micro-
Orifice plate 1 is in contact with the first contact surface 21 of the metal heat-conducting layer 2, wherein the metal heat-conducting layer 2 can flake or powder
The mode of last shape contacts the microwell plate 1;B. the microwell plate to contact with each other, the metal heat-conducting layer are put with the substrate
Heated in a heating unit, the heating unit can be baking oven or oven, when the temperature that the heating unit provides is higher than institute
When stating the fusing point of metal heat-conducting layer 2, the heat absorption of metal heat-conducting layer 2 melts and produces the convex portion 23 and penetrate into the through hole
It is interior, to be incorporated on the microwell plate 1, while it can also make the sky being coated between the microwell plate 1 and the metal heat-conducting layer 2
Gas is overflowed by the through hole 11 of the microwell plate 1, to avoid being coated between the metal heat-conducting layer 2 and the microwell plate 1
Bubble can form focus, cause radiating effect bad, then allow the metal heat-conducting layer 2 more in a manner of pressurizeing and clamp again
Closely it is bonded with the microwell plate 1.
Need to illustrate again, the first manufacture method first places the metal heat-conducting layer on the substrate successively
2 with the microwell plate 1, then in the operation of the LED electronic products, the heat transfer structure of the present invention is made, and is dissipated
Heat;And second of manufacturer's rule first passes through the microwell plate 1 to contact with each other, the metal heat-conducting layer 2 with the substrate
The heat transfer structure of the present invention, then the substrate that will be combined with the microwell plate 1 and the metal heat-conducting layer 2 is made in the heating unit
It is assembled in the LED electronic products, to be radiated in the operation of the LED electronic products.
The heat dissipating method of the first embodiment of heat transfer structure of the present invention, comprises the following steps:A. the metal heat-conducting layer 2 is made
The second contact surface 22 contact the thermal source A;B. after the metal heat-conducting layer 2 absorbs heat, except first contact surface 21 can be led
Hot outer, the convex portion 23 is radiated thermal energy conduction to the microwell plate 1 by the microwell plate 1.Need what is illustrated
It is during use, when temperature of the fusing point of the metal heat-conducting layer 2 higher than the thermal source A, to refer to shown in Fig. 5, institute
It is in solid-state to state metal heat-conducting layer 2, therefore the Volume Changes in the process of expansion and contraction being affected by temperature are smaller, thus the gold
The phenomenon that category heat-conducting layer 2 does not tend to have cracking produces, so as to maintain good heat-transfer effect;And melting when the metal heat-conducting layer 2
Temperature of the point less than the thermal source A, is referred to shown in Fig. 6, and the heat absorption of metal heat-conducting layer 2 melts and makes its convex portion 23 because of capillary
Effect etc. and deeper into the inner edge of through hole 11, add the contact area of the metal heat-conducting layer 2 and the microwell plate 1,
Influence of the crackle to heat-conducting effect caused by metal heat-conducting layer 2 described in radiation processes thus can be reduced, in addition the gold
Belong to heat-conducting layer 2 during expanding with heat and contract with cold, prolong because the through hole 11 on the microwell plate 1 provides the metal heat-conducting layer 2
The space of exhibition, therefore change in size caused by expansion can be disperseed, so as to reduce the cracking severity of the metal heat-conducting layer 2, and
The lower present invention of this design can make the range of choice of the metal heat-conducting layer more, be not only restricted to its thermal coefficient of expansion.It is and described
Through hole 11 on microwell plate 1 provides the hot-air convection space of following slit region simultaneously, even if crackle can not avoid completely,
Also it can reduce heat by the thermal convection current spatial design and deposit in slit region, augmentation of heat transfer effect.
Need to illustrate again, the micropore can be incorporated in because of capillarity etc. when the metal heat-conducting layer 2 is in molten
The inner edge of through hole 11 of plate 1, will not arbitrarily flow and overflow goes out the microwell plate 1.In addition, the metal heat-conducting layer of molten
2 can more be bonded the thermal source A and the microwell plate 1, by by the metal heat-conducting layer 2 of molten be placed in the thermal source A and
Between the microwell plate 1, it is difficult the thermal source A and the microwell plate 1 being substantially parallel to make surface, and switching to face from a contact connects
Touch, roll up heat output, and even if after cooling and solidifying, the metal heat-conducting layer 2 remains to the contact of maintenance face.
Coordinate again refering to table 1, table 2, table 3 and table 4, the metal heat-conducting layer for microwell plate collocation different melting points is used to connect
The test data of the substrate of LED is touched, wherein table 1 shows the thermal conductivity of the metal heat-conducting layer using 60 DEG C of low melting points, and table 2 shows
The thermal conductivity of the metal heat-conducting layer using 70 DEG C of low melting points is gone out, table 3 shows the metal heat-conducting layer using 90 DEG C of low melting points
Thermal conductivity, table 4 are shown using 60 DEG C, 70 DEG C, 90 DEG C of low-melting-point metal heat-conducting layers with 1:1:The formed metal heat-conducting of 1 mixing
The thermal conductivity of layer, and table 1 respectively has calendering to table 4 and does not roll two groups of data, calendering can make metal heat-conducting layer preforming thin
Sheet, be advantageous to metal heat-conducting layer and be uniformly distributed;From shown in experiment, low-melting-point metal heat-conducting layer is because of the substrate by LED
High temperature, low-melting-point metal heat-conducting layer is set to be likely to form three kinds of forms, such as 60 DEG C of low-melting-point metal heat-conducting layers are in a liquid state, 70 DEG C of eutectics
Point metal heat-conducting layer and the low-melting-point metal heat-conducting layer of foregoing three kinds of mixing are in mushy stage, 90 DEG C of low-melting-point metal heat-conducting layers in solid
State, and as shown in following table 1, table 2, table 3 and table 4, the thermal conductivity of solid-state is 23W/m2K, soliqueous thermal conductivity are 21-
22W/m2K, the thermal conductivity of liquid is 21-22W/m2K。
The metal heat-conducting layer of table 1, the microwell plate 60 DEG C of low melting points of collocation
The metal heat-conducting layer of table 2, the microwell plate 70 DEG C of low melting points of collocation
The metal heat-conducting layer of table 3, the microwell plate 90 DEG C of low melting points of collocation
Table 4, microwell plate collocation are with 1:1:The low-melting-point metal heat-conducting layer of the 1 foregoing three kinds of metal heat-conducting layers of mixing
The heat transfer structure of the present invention, because the metal heat-conducting layer collocation microwell plate use adds heat-conducting area,
Therefore influence of the crackle to heat-conducting effect caused by metal heat-conducting layer described in radiation processes can be neglected;Furthermore pass through institute
State the metal heat-conducting layer collocation microwell plate to use, make the big metal heat-conducting layer of thermal coefficient of expansion in the process expanded with heat and contract with cold
In with more extend space, so as to reduce the cracking severity of the metal heat-conducting layer.
The explanation of summary embodiment, it be able to should be fully understood by caused by the operation, use and the present invention of the present invention
Effect, but embodiment described above is only presently preferred embodiments of the present invention, and the scope that the present invention is implemented should can not be limited with this,
Make simple equivalent changes and modifications according to scope of the present invention patent and invention description content, all cover in the present invention
In the range of.
Claims (13)
1. a kind of heat transfer structure, for contacting a thermal source, comprising:
One microwell plate, there are multiple through holes, the aperture system of the through hole is between 10 microns to 90 microns;
One metal heat-conducting layer, there is one first contact surface and one second contact surface, and first contact surface is used to contact the micropore
Plate, second contact surface are used to contact the thermal source, and the metal heat-conducting layer has multiple convex portions correspondingly to stretch into the through hole,
And it is incorporated in the through hole inner edge.
2. heat transfer structure as claimed in claim 1, wherein the metal heat-conducting layer choosing from bismuth, tin, lead, copper, indium, cadmium, thallium, nickel,
At least two in germanium, silver, antimony, gallium, indium, potassium and sodium, and the fusing point of the metal heat-conducting layer is between 6 DEG C to 140 DEG C.
3. heat transfer structure as claimed in claim 1, wherein the section of the through hole is in hourglass shape or upright triangle.
4. heat transfer structure as claimed in claim 1, wherein the microwell plate has a surface contacted with first contact surface,
The surface is rough surface or the surface with more irrigation canals and ditches.
5. a kind of manufacture method of heat transfer structure as described in claim any one of 1-4, comprises the following steps:
A. the microwell plate and the first contact surface of the metal heat-conducting layer is made to be in contact;
B. make the metal heat-conducting layer heat absorption melting and produce the convex portion and penetrate into the through hole.
6. manufacture method as claimed in claim 5, in stepb, the second contact surface and the heat of the metal heat-conducting layer
Source is in contact, and absorbs the heat energy that the thermal source is discharged.
7. manufacture method as claimed in claim 5, in stepb, the second contact surface and the heat of the metal heat-conducting layer
Source is in contact, and the thermal source is a substrate, and the microwell plate to contact with each other, the metal heat-conducting layer are placed in the substrate
Heated in one heating unit, the metal heat-conducting layer absorbs the heat energy that the heating unit is provided.
8. manufacture method as claimed in claim 7, wherein the heating unit is baking oven or oven.
9. manufacture method as claimed in claim 5, in stepb, further with pressuring method make the microwell plate with it is described
Metal heat-conducting layer fits.
10. manufacture method as claimed in claim 5, in step, the metal heat-conducting layer is with laminar or powdered contact
The microwell plate.
11. a kind of heat dissipating method of heat transfer structure as described in claim any one of 1-4, comprises the following steps:
A. the second contact surface of the metal heat-conducting layer is made to contact the thermal source;
B. after metal heat-conducting layer heat absorption, the convex portion carries out thermal energy conduction to the microwell plate by the microwell plate
Radiating.
12. heat dissipating method as claimed in claim 11, wherein the fusing point of the metal heat-conducting layer is higher than the temperature of the thermal source,
The metal heat-conducting layer is in solid-state.
13. heat dissipating method as claimed in claim 11, wherein the fusing point of the metal heat-conducting layer is less than the temperature of the thermal source,
The metal heat-conducting layer heat absorption melts and inserts multiple through holes of the microwell plate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103115816 | 2014-05-02 | ||
TW103115816A TWI588436B (en) | 2014-05-02 | 2014-05-02 | Heat transmitting structure as well as manufacturing method and heat dissipation method of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105047622A CN105047622A (en) | 2015-11-11 |
CN105047622B true CN105047622B (en) | 2018-03-20 |
Family
ID=54454050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410561941.2A Expired - Fee Related CN105047622B (en) | 2014-05-02 | 2014-10-21 | Heat transfer structure, manufacturing method thereof and heat dissipation method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105047622B (en) |
TW (1) | TWI588436B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106455446B (en) * | 2016-10-28 | 2019-02-15 | 曙光信息产业(北京)有限公司 | The cooling device of heater element and the manufacturing method of cooling device |
CN109869642B (en) * | 2019-01-14 | 2023-09-29 | 江苏新西贝机电有限公司 | Heat radiation heat conduction type LED high temperature resistant factory lamp |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1805676A (en) * | 2005-01-15 | 2006-07-19 | 富准精密工业(深圳)有限公司 | Radiator and its making method |
TW200911408A (en) * | 2007-09-05 | 2009-03-16 | Thermoshuttle Co Ltd | Manufacturing method of ultra-thin low melting alloy foil |
CN103276277A (en) * | 2013-05-20 | 2013-09-04 | 长沙艾思柯新材料科技有限公司 | Preparation method and device of high-volume fraction and high-intensity aluminum silicon carbide composite material |
CN103394668A (en) * | 2008-10-03 | 2013-11-20 | 住友电气工业株式会社 | Composite member |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4985129B2 (en) * | 2007-06-12 | 2012-07-25 | 三菱電機株式会社 | Bonded body, electronic module, and bonding method |
US8852359B2 (en) * | 2011-05-23 | 2014-10-07 | GM Global Technology Operations LLC | Method of bonding a metal to a substrate |
-
2014
- 2014-05-02 TW TW103115816A patent/TWI588436B/en not_active IP Right Cessation
- 2014-10-21 CN CN201410561941.2A patent/CN105047622B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1805676A (en) * | 2005-01-15 | 2006-07-19 | 富准精密工业(深圳)有限公司 | Radiator and its making method |
TW200911408A (en) * | 2007-09-05 | 2009-03-16 | Thermoshuttle Co Ltd | Manufacturing method of ultra-thin low melting alloy foil |
CN103394668A (en) * | 2008-10-03 | 2013-11-20 | 住友电气工业株式会社 | Composite member |
CN103276277A (en) * | 2013-05-20 | 2013-09-04 | 长沙艾思柯新材料科技有限公司 | Preparation method and device of high-volume fraction and high-intensity aluminum silicon carbide composite material |
Also Published As
Publication number | Publication date |
---|---|
TWI588436B (en) | 2017-06-21 |
CN105047622A (en) | 2015-11-11 |
TW201542998A (en) | 2015-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3119117U (en) | Heat tube heatsink structure | |
CN1969397B (en) | Thermoelectric module | |
CN101510533B (en) | Novel microelectronic device radiator | |
JP4466644B2 (en) | heatsink | |
CN205194687U (en) | A heat conduction silica gel sheet for cell -phone | |
US20130133864A1 (en) | Heat distribution structure, manufacturing method for the same and heat-dissipation module incorporating the same | |
JP3128955U (en) | Electric circuit board structure with heat dissipation sheet | |
CN101632171A (en) | Radiating component, the circuit substrate that uses it, electronic component module and manufacture method thereof | |
CN105047622B (en) | Heat transfer structure, manufacturing method thereof and heat dissipation method thereof | |
CN106856180B (en) | A method of welding IGBT module | |
US20070102143A1 (en) | Heat dissipation module and heat pipe thereof | |
TWM631419U (en) | Liquid immersion radiator | |
CN101953240B (en) | Method of forming a heatsink | |
CN204516803U (en) | Great power LED low thermal resistance radiator structure | |
CN204005868U (en) | LED radiator | |
TWI831163B (en) | Immersed heat sink | |
CN205546391U (en) | Heat radiation fin | |
CN217904913U (en) | Liquid immersion type radiator | |
US12114464B2 (en) | Liquid immersion cooler | |
CN210053639U (en) | High heat dissipation composite line board | |
TWI482002B (en) | Heat sink and manufacturing method thereof | |
CN207621944U (en) | Flexible base board combination heat-pipe radiating apparatus | |
CN207439233U (en) | A kind of integral foam aluminium radiator fin | |
CN114953630A (en) | Porous interlayer self-packaging type liquid metal phase change interface material and preparation method and use method thereof | |
TWM621428U (en) | Heat conduction device for electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180320 Termination date: 20191021 |