CN106856180B - A method of welding IGBT module - Google Patents
A method of welding IGBT module Download PDFInfo
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- CN106856180B CN106856180B CN201510900654.4A CN201510900654A CN106856180B CN 106856180 B CN106856180 B CN 106856180B CN 201510900654 A CN201510900654 A CN 201510900654A CN 106856180 B CN106856180 B CN 106856180B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention proposes a kind of methods for welding IGBT module comprising following steps: step 1: the substrate of arch being flattened and is fixed on plate, and the projecting surface of the substrate is connected to plate；Step 2: solder is set on the concave face of the substrate to form liner plate solder layer in homogeneous thickness；Step 3: liner plate is covered on the liner plate solder layer；The plate: being placed on heating in horizontal heating plate by step 4 so that liner plate solder layer fusing, then cools down the liner plate solder layer.It effectively control base board camber can irregularly change using after this method, defined substrate camber value is reached after encapsulating module, in welding without the concern for welding material and packaging technology parameter, substrate camber qualification rate is improved.
Description
Technical field
The present invention relates to a kind of welding technique, in particular to a kind of method for welding IGBT module.
Background technique
As shown in Figure 1, IGBT (insulated gate bipolar transistor) module 1 includes substrate 2 and is arranged on a substrate 2 at present
Multiple chip units.Each chip unit includes the chip 6 stacked gradually, chip layer 5, liner plate 4, liner plate layer 3.Liner plate
Layer 3 is used for connecting lining plate 4 and substrate 2.Connection is formed by the lead being laterally extended between chip 6.Pass through function between liner plate 4
Rate terminal, which is formed, to be connected with each other.
Substrate 2 is the main thoroughfare that IGBT module 1 radiates, and substrate 2 should all have centainly before being installed on radiator
Camber.Substrate 2 is commonly installed the one side on a heat sink, outwardly protruded and abuts against with radiator.The edge of substrate 2 is arranged
The screw of multiple connecting substrates 2 and radiator with by substrate 2 be fixed to radiator on, and due to substrate 2 have certain camber,
As a result, the gap between substrate 2 and radiator more it is small more evenly, the capacity of heat transmission between substrate 2 and radiator is stronger.In order to mention
High heat dissipation effect, usually fills heat-conducting silicone grease in this gap.
The camber design of substrate 2 need to consider module potting process, and substrate 2 and the welding of liner plate 4 are by solder connection, weldering
Expect that the process after preheating, thawing, cooling, solder solid, liquid, solid-state phase changes can make components bear certain stress, this
The intermolecular binding force of kind is more apparent to the metamorphosis of substrate 2.If the face that substrate 2 is connected with liner plate layer 3 is plane, just
It can make the whole discontinuity of substrate 2 in welding process, cause the camber at 2 back side of substrate to change irregular, generate 2 back side of substrate
Warpage influences the heat dissipation of IGBT module 1, can generation module overheating failure under serious conditions.
The one side of existing substrate 2 is recessed, another side protrusion.The camber of substrate 2 generally remains in tens to several hundred microns
In the range of.Usually after the molding of substrate 2, then process on substrate 2 using punching press (or mold) and by the way of finishing
Camber.
Substrate 2 is mainly made of copper, ceramics or other metal materials.Current 2 camber control method of substrate is mainly from base
Three design of the initial camber of plate 2, solder type selecting, welding condition aspects are set out, and suitable 2 camber of substrate designs and matches
Solder, the solder that the substrate 2 of different camber values uses and technological parameter are different.
Under the conditions of existing packaging technology, the control of 2 camber of substrate is had the disadvantage in that
(1) 2 camber value of substrate does not consider technical process and process parameter control only in accordance with the initial camber design value of substrate 2,
2 camber value of substrate after the completion of encapsulation is 2 camber of substrate that IGBT module 1 is dispatched from the factory.2 camber value of substrate is broad, in module
The heat-conducting silicone grease thicker in 2 backside coating of substrate is needed to dissipate to ensure that module contacts well with radiator to module when use
Heat has a certain impact；
(2) since storeroom thermal expansion coefficient is inconsistent, if 2 size of substrate is larger, since the camber of substrate 2 exists, mould
Block welding process 2 uneven heatings of substrate are even, and module undergoes formation 2 back side of substrate after pyroprocess locally uneven, and substrate 2 is turned round
Song deformation is more serious, and the local camber of substrate 2 is excessive, influences module heat dissipating performance；
(3) if liner plate 4 is not of uniform size, layer is unevenly distributed, and 2 stress of substrate can not yet in welding procedure
, and then cause the variation of 2 camber of substrate irregular, the camber of substrate 2 is more difficult to control；
(4) since substrate 2 is there are camber, in welding, the vertex (generally in center) of the projecting surface of substrate 2 with plus
Hot plate contact, the lesser region of camber not with contact heater plate.Heat self-heating plate passes to substrate 2 in heating process, close
The solder of center melts at first, after solder fusing, flows to 2 center of substrate.Solder after fusing is on 2 surface of substrate
Mobility is different, causes cooling 3 thickness of rear lining plate layer inconsistent, below same liner plate 4, close to 2 central area of substrate
Liner plate layer 3 is partially thick, and the liner plate layer 3 far from central area is relatively thin；
(5) substrate 2 is contacted with heating plate in the larger position of 2 camber of substrate, remaining region is not contacted with hot plate.Heat by
Hot plate needs to improve the temperature of hot plate to the transmitting of substrate 2, and keeping substrate 2 interregional, there are the temperature difference, and then drives heat to 2 temperature of substrate
Lower region conduction, extending heating time are spent, and hot plate temperature promotion needs to consume more energy, reduces welding effect
Rate；
(6) distribution in uneven thickness of liner plate layer 3 not only influenced the heat dissipation performance of module, but also at IGBT module 1 week
In phase property temperature changing process, the unbalance stress of liner plate layer 3 will cause local creep and crack, and influence the long-term of module
Reliability；Since substrate 2 is in the high-temperature soldering process by solder fusing, 2 center solder of substrate is more, cooling in welding
The 2 camber deformation of process substrate increases, and aggravates the uneven distribution of layer thickness.
Summary of the invention
The technical problems to be solved by the invention are how to avoid the substrate of liner plate and arch caused when welding together
Substrate irregular deformation.
In view of the above technical problems, the present invention proposes a kind of method for welding IGBT module comprising following steps: step
One: the substrate of arch being flattened and is fixed on plate, the projecting surface of substrate is connected to plate；Step 2: in the recess of substrate
Solder is set on face to form liner plate solder layer in homogeneous thickness；Step 3: liner plate is covered on liner plate solder layer；Step
Four: plate being placed on to heating in horizontal heating plate so that the fusing of liner plate solder layer, then cools down liner plate solder layer.
In a specific embodiment, in step 1, it is arranged on the marginal portion of substrate multiple flat for connecting
The screw of plate and substrate is substrate to be fastened on plate.
In a specific embodiment, in step 4, liner plate solder layer is risen in the temperature of liner plate solder layer
Before fusing point, the heating rate of heating plate is 0.5~2 DEG C/s.
In a specific embodiment, in step 4, in cooling procedure, the cooling rate 1~3 of liner plate solder layer
℃/s。
In a specific embodiment, it in step 4, is heated in vacuum environment.
In a specific embodiment, liner plate includes the first metal layer, insulating layer and second metal layer stacked gradually.
In a specific embodiment, insulating layer is by aluminium oxide, aluminium nitride, beryllium oxide, silicon carbide or silicon nitride
It is made.
In a specific embodiment, liner plate solder layer is the scolding tin of tin cream or foil-like.
In a specific embodiment, before step 4 after step 3, solder is set also on liner plate to be formed
Chip solder layer in homogeneous thickness, the fusing point of chip solder layer are lower than the fusing point of the liner plate solder layer, chip are covered on institute
It states on chip solder layer,
In step 4, chip solder layer is heated up together with liner plate solder layer to be melted, then simultaneously cooling core
Piece solder layer and the liner plate solder layer.
In a specific embodiment, when heated, the heat flux distribution of the interface between heating plate and plate
Uniformly.
After welding using the method in the present invention, tensile stress is generated in it after the solidification of liner plate solder layer, and liner plate
Solder layer is located at concave face, arches upward again when substrate separates metacoxal plate with plate, thus has matched the drawing in liner plate solder layer
The deformation direction of stress, and then the irregular welding deformation of substrate is eliminated, so that effective control base board camber irregularly changes,
Substrate camber value as defined in reaching after encapsulating module, in welding without the concern for welding material and packaging technology parameter, base
Plate arch degree qualification rate improves.
Detailed description of the invention
The invention will be described in more detail below based on embodiments and refering to the accompanying drawings.Wherein:
Fig. 1 is a kind of existing structural schematic diagram of IGBT module；
Fig. 2 is the flow chart of the method for the welding IGBT module in one embodiment of the present invention；
Fig. 3 is that the substrate in one embodiment of the present invention is placed into the schematic diagram on plate；
Fig. 4 is the assembling schematic diagram of the substrate and plate in one embodiment of the present invention；
Fig. 5 is the assembling schematic diagram between IGBT module, plate and heating plate in one embodiment of the present invention.
In the accompanying drawings, identical component uses identical appended drawing reference.The attached drawing is not drawn according to the actual ratio.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings.
As shown in Fig. 2, proposing a kind of method for welding IGBT module 10 in the embodiment of the present invention.This method includes following
Step:
Step 1: the substrate 60 of arch is flattened on plate 70, the projecting surface 62 of substrate 60 is connected to plate 70.
Its multiple chip unit of skeletal support as IGBT module of substrate 60, while also as the heat dissipation of IGBT module
An important ring in channel, for chip unit to be transmitted to heat transfer thereon to radiator.Substrate 60 can use
Metal material is made, such as the alloy material of copper or copper.Substrate 60 is preferably multiple using aluminium silicon carbide (AlSiC) Metal Substrate heat management
Condensation material is made.The substrate 60 made of aluminium silicon-carbide metal-base heat management composite material has high thermal conductivity (170~200W/
MK), the heat generated on chip 50 can be conducted in time by substrate 60, avoid 50 thermal failure of chip.Substrate 60 is
Rough Rectangular Plate Structure, middle part protrusion.Two plate faces of substrate 60 are respectively the concave face 61 and convex being recessed inwardly
Projecting surface 62 out.Concave face 61 and projecting surface 62 are preferably cambered surface.The thickness of substrate 60 is usually 6000 microns or less.Substrate
60 camber is generally 10~900 microns.The edge of substrate 60 is provided with multiple through-holes, and through-hole is perpendicular to substrate 60.It is multiple logical
Hole can along substrate relative to two sides be arranged successively into two rows.
Fixture includes plate 70 and multiple bolts 80.Two plate faces of plate 70 are flat and smooth, and two of plate 70
Plate face is mutually parallel.Usually by linear expansion coefficient, smaller and thermally conductive preferable metal material is made plate 70, such as plate
70 be copper sheet.To obtain biggish rigidity, more than the several times with a thickness of 60 thickness of substrate of plate 70.Plate 70 is provided with multiple
Perpendicular to the screw hole of its plate face, multiple screw holes are arranged in two rows on plate 70.Screw hole on plate 70 can be with substrate 60 1
One alignment.
As shown in figure 3, first the substrate of arch 60 is placed on plate 70, the projecting surface 62 of substrate 60 is connected to plate
70.The screw hole on through-hole and plate 70 on substrate 60 is mutually aligned.As shown in figure 4, bolt 80 to be passed through to the through-hole of substrate 60
And it is screwed into the screw hole of plate 70.In this way, the edge that substrate 60 tilts is pressed on plate 70 by more bolts 80, so that base
Plate 60 flattens on plate 70.
Step 2: solder is set on the concave face 61 of substrate 60 to form liner plate solder layer 30 in homogeneous thickness.
As shown in figure 5, solder in homogeneous thickness is arranged on the concave face 61 of substrate 60.The solder can be the pricker of foil-like
Material.The solder is soft solder, i.e. fusing point is lower than 450 DEG C.Solder is preferably soldering paste.Printing technology is generallyd use by soldering paste equably
It is coated on substrate 60.Soldering paste includes scaling powder and solder powder.Scaling powder mainly includes activator, thixotropic agent.Solder powder is main
It is mixed by the alloy powder of tin-lead, tin bismuth, tin silver copper.Activator is used to remove the oxidation on 40 surface of substrate 60 and liner plate
Substance is also used to reduce the tension of tin, lead surface.Thixotropic agent is used to adjust the viscosity of soldering paste to prevent soldering paste from press occurring
Phenomena such as hangover, adhesion.The thickness range of liner plate solder layer 30 is 100~300 microns.The area of liner plate solder layer 30 is slightly less than
The area of liner plate 40.Preferably, the area of liner plate solder layer 30 is the 90% of liner plate area.
Step 3: liner plate 40 is covered on liner plate solder layer 30.
Liner plate 40 is rectangular plate.Liner plate 40 includes the first metal layer, insulating layer and the second metal layer stacked gradually.The
One metal layer and second metal layer are preferably made of copper.Insulating layer is by aluminium oxide, aluminium nitride, beryllium oxide or silicon carbide or four
It nitrogenizes three silicon to be made, the first metal layer and second metal layer are isolated from each other by insulating layer, in this way, liner plate 40 has well absolutely
Edge performance.Meanwhile the first metal layer and second metal layer can be more firmly combined together with solder.Liner plate 40 also has very
Good heating conduction.Liner plate 40 is covered on liner plate solder layer 30, each side of liner plate 40 and each item of liner plate solder layer 30
Side is parallel one by one.
Step 4: plate 70 is placed in horizontal heating plate 90 and is heated so that liner plate solder layer 30 melts, then
Cooling liner plate solder layer 30.
The exterior contour of heating plate 90 is slab construction.Heating plate 90 can be electric hot plate.Heating plate 90 is horizontally disposed.It will
Plate 70 is placed in heating plate 90, and plate 70 is abutted away from the plate face of substrate 60 with heating plate 90.Heating plate 90 can with plate
Uniform heat flow density is formed on 70 surfaces abutted against, to be evenly heated to plate 70.Heating plate 90 adds plate 70
Heat, heat is transmitted on liner plate solder layer 30 through substrate 60 until liner plate solder layer 30 melts, and in this process, substrate 60 is right
Liner plate solder layer 30 is evenly heated.The liner plate solder layer 30 of liquid soaks substrate 60 and liner plate 40 and fills full substrate 60 and liner plate
Gap between 40.After liner plate solder layer 30 is cooling, liner plate solder layer 30 welds together substrate 60 and liner plate 40.
Step 5: substrate 60 is disassembled from plate 70.
Bolt 80 is disassembled from plate 70, so that substrate 60 be disassembled from plate 70.
Liner plate solder layer 30 generates tensile stress after solidifying in it, and liner plate solder layer 30 is located at concave face 61, works as substrate
60 separate metacoxal plate 60 with plate 70 arches upward again, and thus eliminating the need the influences of the tensile stress in liner plate solder layer 30, in turn
The irregular welding deformation of substrate 60 is eliminated, so that effective control base board camber irregularly changes, is reached after encapsulating module
Defined substrate camber value, in welding without the concern for welding material and packaging technology parameter, substrate camber qualification rate is high.
Preferably, in step 4, liner plate solder layer 30 is heated using vacuum back-flow Welding.It is right using the technique
The heating of liner plate solder layer 30 carries out under vacuum conditions.Under vacuum conditions, the liner plate solder layer 30 of melting is difficult to splash, together
When be also avoided that each component is oxidized.
Preferably, during heating, before the temperature of liner plate solder layer 30 rises to the fusing point of liner plate solder layer 30,
The heating rate of heating plate 90 is 0.5~2 DEG C/s.Liner plate 40 heats up gently to prevent 40 fragmentation of liner plate.
Preferably, in cooling procedure, the cooling rate of liner plate solder layer 30 is 1~3 DEG C/s.Can liner plate be welded in this way
The bed of material 30 is finer and close after the cooling period, and mechanical strength is higher.
Preferably, during heating, the maximum temperature on liner plate solder layer 30 is higher than the fusing point temperature of liner plate solder layer 30
It spends and exceeds 40 DEG C of the melting temperature.Liner plate solder layer 30 can so sufficiently melted, the solder flux in liner plate solder layer 30 is abundant
Evaporation.
Preferably, it before step 4 after step 3, is uniformly spread in plate face of the liner plate 40 away from liner plate solder layer 30
If solder, chip solder layer 20 in homogeneous thickness is formed.Chip 50 is covered on chip solder layer 20.Chip solder layer 20
Fusing point is lower than the fusing point of liner plate solder layer 20.
In step 4, chip solder layer 20 is heated up together with liner plate solder layer 30 to be melted, then cold simultaneously
But chip solder layer 20 and liner plate solder layer 30.
In this way, chip 50 and liner plate 40 can also be welded on one while welding together substrate 60 and liner plate 40
It rises.
In a preferred embodiment, the above method further includes the pre- step before step 1:
Chip 50 and liner plate 40 are welded together, the fusing point for welding chip 50 and the chip solder layer 20 of liner plate 40
Higher than the maximum temperature achieved of chip solder layer 20 in step 4.
Although by reference to preferred embodiment, invention has been described, the case where not departing from the scope of the present invention
Under, various improvement can be carried out to it and can replace component therein with equivalent.Especially, as long as there is no structures to rush
Prominent, items technical characteristic mentioned in the various embodiments can be combined in any way.The invention is not limited to texts
Disclosed in specific embodiment, but include all technical solutions falling within the scope of the claims.
Claims (10)
1. a kind of method for welding IGBT module, the described method comprises the following steps:
Step 1: the substrate of arch being flattened and is fixed on plate, and the projecting surface of the substrate is connected to plate；
Step 2: solder is set on the concave face of the substrate to form liner plate solder layer in homogeneous thickness；
Step 3: liner plate is covered on the liner plate solder layer；
The plate: being placed on heating in horizontal heating plate by step 4 so that liner plate solder layer fusing, then cold
The liner plate solder layer.
2. the method according to claim 1, wherein being set on the marginal portion of the substrate in step 1
Multiple screws for connecting the plate and the substrate are set so that the substrate is fastened on the plate.
3. the method according to claim 1, wherein being risen in step 4 in the temperature of liner plate solder layer
Before the fusing point of liner plate solder layer, the heating rate of heating plate is 0.5~2 DEG C/s.
4. the method according to claim 1, wherein in step 4, in cooling procedure, liner plate solder layer
Cooling rate is 1~3 DEG C/s.
5. method according to claim 1 to 4, which is characterized in that in step 4, in vacuum environment into
Row heating.
6. method according to claim 1 to 4, which is characterized in that the liner plate includes stacked gradually
One metal layer, insulating layer and second metal layer.
7. according to the method described in claim 6, it is characterized in that, the insulating layer is by aluminium oxide, aluminium nitride, beryllium oxide, carbon
SiClx or silicon nitride are made.
8. method according to claim 1 to 4, which is characterized in that the liner plate solder layer is the tin of stratiform
The scolding tin of cream or foil-like.
9. method according to claim 1 to 4, before step 4 after step 3, also in the liner plate
Upper setting solder is to form chip solder layer in homogeneous thickness, and the fusing point of the chip solder layer is lower than the liner plate solder layer
Chip is covered on the chip solder layer by fusing point,
In step 4, the chip solder layer is heated up together with the liner plate solder layer to be melted, then cold simultaneously
The chip solder layer and the liner plate solder layer.
10. method according to claim 1 to 4, which is characterized in that when heated, the heating plate and institute
The heat flux distribution for stating the interface between plate is uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510900654.4A CN106856180B (en) | 2015-12-08 | 2015-12-08 | A method of welding IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510900654.4A CN106856180B (en) | 2015-12-08 | 2015-12-08 | A method of welding IGBT module |
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| CN106856180A CN106856180A (en) | 2017-06-16 |
| CN106856180B true CN106856180B (en) | 2019-06-07 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550560A (en) * | 2018-05-30 | 2018-09-18 | 江阴市赛英电子股份有限公司 | A kind of New IGBT module copper soleplate structure |
| CN110142475B (en) * | 2019-05-07 | 2021-01-26 | 国电南瑞科技股份有限公司 | Tool-free fixed welding method for high-power IGBT module |
| CN112331622A (en) * | 2019-08-05 | 2021-02-05 | 珠海格力电器股份有限公司 | Packaging method of insulated gate bipolar transistor module and module |
| CN110919124A (en) * | 2019-11-19 | 2020-03-27 | 浙江芯丰科技有限公司 | Die for welding IGBT module |
| CN115401352B (en) * | 2022-08-18 | 2024-07-19 | 深圳基本半导体有限公司 | Welding method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103579131A (en) * | 2013-11-04 | 2014-02-12 | 株洲南车时代电气股份有限公司 | Curvature-free substrate used for power IGBT module encapsulation |
| CN203760465U (en) * | 2014-01-22 | 2014-08-06 | 扬州虹扬科技发展有限公司 | Novel power semiconductor module |
| CN103779316A (en) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | Power module soldering structure |
| CN203746836U (en) * | 2014-01-25 | 2014-07-30 | 嘉兴斯达半导体股份有限公司 | Power module welding structure |
| CN103985686B (en) * | 2014-06-09 | 2016-10-12 | 株洲南车时代电气股份有限公司 | A kind of IGBT module welded encapsulation structure |
| CN204464261U (en) * | 2014-11-18 | 2015-07-08 | 西安明科微电子材料有限公司 | A kind of new structure of IGBT substrate |
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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Effective date of registration: 20200930 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |