JP2009302261A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2009302261A
JP2009302261A JP2008154534A JP2008154534A JP2009302261A JP 2009302261 A JP2009302261 A JP 2009302261A JP 2008154534 A JP2008154534 A JP 2008154534A JP 2008154534 A JP2008154534 A JP 2008154534A JP 2009302261 A JP2009302261 A JP 2009302261A
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surface electrode
wire
coating layer
semiconductor device
bonded
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JP2008154534A
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Masanori Usui
正則 臼井
Masayasu Ishiko
雅康 石子
Koji Hotta
幸司 堀田
Tomokiyo Suzuki
智清 鈴木
Jun Saito
順 斎藤
Akihiro Yanagiuchi
昭宏 柳内
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Toyota Motor Corp
Toyota Central R&D Labs Inc
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Toyota Motor Corp
Toyota Central R&D Labs Inc
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Priority to JP2008154534A priority Critical patent/JP2009302261A/en
Publication of JP2009302261A publication Critical patent/JP2009302261A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To suppress a phenomenon that when heat is generated locally at a bonding point, the heat is efficiently conducted over a wide range on a surface of a semiconductor chip and the bonding point is locally overheated to deteriorate bonding strength between a wire and a surface electrode. <P>SOLUTION: A coating layer 20 consisting of a material having higher thermal conductivity than the surface electrode 16 where the wire 22 is bonded, is formed on a surface of the surface electrode 16. When the surface of the surface electrode 16 where the wire 22 is bonded is coated with the material which has the higher heat thermal conductivity than the surface electrode 16, heat is efficiently conducted over a wide range of the surface of a semiconductor chip 14 to prevent the phenomenon that the bonding point is locally overheated. Alternatively, the wire may be bonded to the surface electrode through the surface coating layer. In this case, the coating layer thicker than the surface electrode is formed of the material which has the higher thermal conductivity than the surface electrode, on the surface of the surface electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体チップの表面電極にワイヤがボンディングされている半導体装置に関する。   The present invention relates to a semiconductor device in which a wire is bonded to a surface electrode of a semiconductor chip.

半導体チップで処理する電力が増大しており、半導体チップの発熱量が増大している。そこで、半導体チップに冷却装置を付設することによって半導体チップの過熱を防止する半導体装置が開発されており、その一例が特許文献１に記載されている。
特許文献１の技術では、上から順に、半導体チップと絶縁板とヒートシンクを積層している。半導体チップと絶縁板の間ははんだで接続され、絶縁板とヒートシンクの間には熱伝導グリースが介在している。半導体チップの表面には表面電極が形成されており、絶縁板の表面には配線パターンが形成されており、両者間はワイヤで接続されている。半導体チップの表面や絶縁板の表面は樹脂で封止されている。ワイヤは、樹脂内に埋め込まれている。 The power processed by the semiconductor chip is increasing, and the amount of heat generated by the semiconductor chip is increasing. In view of this, a semiconductor device that prevents overheating of the semiconductor chip by attaching a cooling device to the semiconductor chip has been developed, and an example thereof is described in Patent Document 1.
In the technique of Patent Document 1, a semiconductor chip, an insulating plate, and a heat sink are stacked in order from the top. The semiconductor chip and the insulating plate are connected by soldering, and thermal conductive grease is interposed between the insulating plate and the heat sink. A surface electrode is formed on the surface of the semiconductor chip, a wiring pattern is formed on the surface of the insulating plate, and the two are connected by a wire. The surface of the semiconductor chip and the surface of the insulating plate are sealed with resin. The wire is embedded in the resin.

特開平９-１３４９８３号公報Japanese Patent Laid-Open No. 9-134983

特許文献１の半導体装置は、半導体チップに生じる発熱を絶縁板を介してヒートシンクに能率よく伝熱するために、半導体チップの過熱を防止することができる。   Since the semiconductor device of Patent Document 1 efficiently transfers heat generated in the semiconductor chip to the heat sink via the insulating plate, the semiconductor chip can be prevented from overheating.

しかしながら、半導体チップで処理する電力が増大するのに伴って、半導体チップの表面電極にボンディングされているワイヤを通過する電流も増大している。ワイヤでも発熱し、ボンディング点（正確にはワイヤと半導体チップの接続点の近傍に位置するために大電流が通過する範囲内の半導体チップをいう）でも発熱する。特許文献１の半導体装置では、ボンディング点に樹脂を被せて封止している。樹脂の熱伝導率は低く、ボンディング点で局所的に発熱した場合に、半導体チップの広い範囲に伝熱して温度を平均化する能率が低い。ボンディング点で局所的に発熱した場合に、そのボンディングが局所的に過熱してしまいやすい。特許文献１の半導体装置では、ワイヤでの発熱や、ボンディング点での発熱に良好に対処することができない。   However, as the power processed by the semiconductor chip increases, the current passing through the wire bonded to the surface electrode of the semiconductor chip also increases. Heat is generated even at the wire, and heat is also generated at the bonding point (more precisely, a semiconductor chip within a range through which a large current passes because it is located near the connection point between the wire and the semiconductor chip). In the semiconductor device of Patent Document 1, the bonding point is covered with resin and sealed. The heat conductivity of the resin is low, and when the heat is generated locally at the bonding point, the efficiency of transferring the heat to a wide range of the semiconductor chip and averaging the temperature is low. When heat is generated locally at the bonding point, the bonding tends to overheat locally. In the semiconductor device of Patent Document 1, heat generation at a wire and heat generation at a bonding point cannot be satisfactorily handled.

現状の技術では、半導体チップの表面電極にボンディングするワイヤを多数本に分け、ボンディング点が表面電極内で分布するように配置している。これによって、ボンディング点が局所的に過熱し、ワイヤと表面電極の接合強度が劣化してしまう現象の発生を抑制している。   In the current technology, the wires to be bonded to the surface electrode of the semiconductor chip are divided into a number of wires, and the bonding points are arranged in the surface electrode. This suppresses the occurrence of a phenomenon in which the bonding point locally overheats and the bonding strength between the wire and the surface electrode deteriorates.

しかしながら、ボンディングするワイヤ本数を多数本に分ける技術では、ボンディング処理数が増大し、ボンディング処理に要する時間が長くかかってしまう。   However, in the technique of dividing the number of wires to be bonded into a large number, the number of bonding processes increases and it takes a long time for the bonding process.

本発明は、ボンディング点で局所的に熱が発生する場合に、その熱を半導体チップの表面の広い範囲に効率的に伝熱することによって、ボンディング点が局所的に過熱する現象の発生を防止できる技術を提供する。   The present invention prevents the phenomenon of local overheating of the bonding point by efficiently transferring the heat to a wide area of the surface of the semiconductor chip when heat is generated locally at the bonding point. Provide technology that can.

本発明は、半導体チップの表面電極にワイヤがボンディングされている半導体装置に関する。本発明の半導体装置は、ワイヤがボンディングされている表面電極の表面に、表面電極よりも熱伝導率が高い材料の被覆層が形成されていることを特徴とする。
前記したように、特許文献１の半導体装置の場合、ワイヤがボンディングされている表面電極の表面に、表面電極よりも熱伝導率が低い樹脂材料がコーティングされている。これでは、ボンディング点で局所的に発熱した場合に、その熱を半導体チップの表面の広い範囲に効率的に伝熱することができず、その接続点が局所的に過熱されてしまいやすい。
それに対して、ワイヤがボンディングされている表面電極の表面が、表面電極よりも熱伝導率が高い材料でコーティングされていれば、半導体チップの表面の広い範囲に効率的に伝熱することができ、ボンディング点が局所的に過熱されてしまう現象の発生を防止できる。
なお、表面電極よりも熱伝導率が高い材料でコーティングした後に、さらに樹脂をコーティングしてもよい。 The present invention relates to a semiconductor device in which a wire is bonded to a surface electrode of a semiconductor chip. The semiconductor device of the present invention is characterized in that a coating layer made of a material having higher thermal conductivity than the surface electrode is formed on the surface of the surface electrode to which the wire is bonded.
As described above, in the case of the semiconductor device of Patent Document 1, the surface of the surface electrode to which the wire is bonded is coated with the resin material having lower thermal conductivity than the surface electrode. In this case, when heat is locally generated at the bonding point, the heat cannot be efficiently transferred to a wide area on the surface of the semiconductor chip, and the connection point is likely to be locally heated.
On the other hand, if the surface of the surface electrode to which the wire is bonded is coated with a material having a higher thermal conductivity than the surface electrode, heat can be transferred efficiently over a wide area of the surface of the semiconductor chip. The phenomenon that the bonding point is locally overheated can be prevented.
In addition, after coating with a material having higher thermal conductivity than the surface electrode, a resin may be further coated.

前記に代えて、半導体チップの表面電極に被覆層を介してワイヤをボンディングしてもよい。この場合は、表面電極の表面に、表面電極よりも熱伝導率が高い材料で、表面電極よりも厚く形成されている被覆層を形成する。
例えばアルミ等で表面電極を形成し、その表面にはんだとのなじみがよいニッケル層を形成し、さらにその表面に金層を形成することがある。この場合、ニッケル層や金層は、表面電極の一部ということもできるが、被覆層ということもできる。本明細書では、後者の見方をする。本明細書では、半導体チップの半導体領域に直接的に接触している膜を電極といい、その表面を覆っている層は被覆層という。
従来の技術では、表面電極の表面に、表面電極よりも熱伝導率が高い材料（例えば金）で被覆層を形成することがあるが、その被覆層は表面電極よりも薄く、伝熱能力には期待できない。
本発明の半導体装置では、表面電極の表面に、表面電極よりも熱伝導率が高い材料で、表面電極よりも厚く形成されている被覆層を形成しておいてワイヤをボンディングする。この場合、被覆層が伝熱効率を改善する。ボンディング点で局所的に発熱した場合に、被覆層によって半導体チップの表面の広い範囲に効率的に伝熱することができ、ボンディング点が局所的に過熱されてしまう現象の発生を防止できる。 Instead of the above, a wire may be bonded to the surface electrode of the semiconductor chip via a coating layer. In this case, a coating layer made of a material having a higher thermal conductivity than the surface electrode and thicker than the surface electrode is formed on the surface electrode.
For example, a surface electrode may be formed of aluminum or the like, a nickel layer that is compatible with solder is formed on the surface, and a gold layer is further formed on the surface. In this case, the nickel layer or the gold layer can be said to be a part of the surface electrode, but can also be called a coating layer. In this specification, the latter view is taken. In this specification, a film that is in direct contact with a semiconductor region of a semiconductor chip is referred to as an electrode, and a layer that covers the surface is referred to as a coating layer.
In the conventional technique, a coating layer may be formed on the surface electrode with a material (for example, gold) having a higher thermal conductivity than the surface electrode. Cannot be expected.
In the semiconductor device of the present invention, a wire is bonded by forming a coating layer formed on the surface of the surface electrode with a material having a higher thermal conductivity than that of the surface electrode and being thicker than the surface electrode. In this case, the coating layer improves the heat transfer efficiency. When heat is generated locally at the bonding point, heat can be efficiently transferred to a wide range of the surface of the semiconductor chip by the coating layer, and the phenomenon that the bonding point is locally overheated can be prevented.

被覆層を有機材料で形成すると簡単にコーティングすることができる。この場合、カーボンナノチューブを含有する有機材料で被覆すれば、表面電極よりも高い熱伝導率を得ることができる。   When the coating layer is formed of an organic material, it can be easily coated. In this case, if it is coated with an organic material containing carbon nanotubes, a higher thermal conductivity than that of the surface electrode can be obtained.

同一表面電極に複数本のワイヤがボンディングされている場合、各々のボンディング点に形成されている被覆層が分断されていてもよいし、1枚の共通の被覆層が複数のボンディング点に亘って伸びていてもよい。
前者によると使用する材料量が少なくてすむメリットが得られ、後者であれば表面電極の広い範囲に伝熱することができる。必要性にあわせて取捨選択することが好ましい。 When a plurality of wires are bonded to the same surface electrode, the coating layer formed at each bonding point may be divided, or one common coating layer extends over a plurality of bonding points. It may be stretched.
According to the former, there is a merit that the amount of material to be used is small, and in the latter case, heat can be transferred to a wide range of the surface electrode. It is preferable to select according to necessity.

本発明によると、ボンディング点で局所的に発生した熱を半導体チップの表面の広い範囲に効率的に伝熱することができ、ボンディング点が局所的に過熱してワイヤと表面電極の接合強度が劣化してしまう現象の発生を抑制できる。
従来の技術に比してワイヤ数を減少することができ、ボンディング点の数を減少することができる。あるいは、ワイヤ数を増加しないで、より大電力を給電することができる。 According to the present invention, the heat generated locally at the bonding point can be efficiently transferred to a wide area of the surface of the semiconductor chip, and the bonding point locally overheats and the bonding strength between the wire and the surface electrode is increased. Occurrence of a phenomenon that deteriorates can be suppressed.
Compared with the prior art, the number of wires can be reduced, and the number of bonding points can be reduced. Alternatively, more power can be supplied without increasing the number of wires.

以下に説明する実施例の主要な特徴を列記する。
（特徴１）ワイヤをボンディングした表面電極の表面に、カーボンナノチューブを含む液状材料をたらし、その後に固化することによって被覆層を形成する。
（特徴２）ワイヤをボンディングした表面電極の表面に、表面電極よりも熱伝導率の高い金属を付着して被覆層を形成する。付着方法は、蒸着・スパッタリング・メッキ法のいずれでもよい。
（特徴３）ワイヤをボンディングする前の表面電極の表面に、表面電極よりも熱伝導率の高い金属を付着して被覆層を形成し、その後にワイヤボンディングする。付着方法は、蒸着・スパッタリング・メッキ法のいずれでもよい。 The main features of the embodiments described below are listed.
(Characteristic 1) A coating material is formed by placing a liquid material containing carbon nanotubes on the surface of a surface electrode to which wires are bonded, and then solidifying the material.
(Feature 2) A metal having a higher thermal conductivity than the surface electrode is attached to the surface of the surface electrode bonded with the wire to form a coating layer. The deposition method may be any of vapor deposition, sputtering, and plating.
(Feature 3) A coating layer is formed by attaching a metal having a higher thermal conductivity than the surface electrode to the surface of the surface electrode before bonding the wire, and then wire bonding is performed. The deposition method may be any of vapor deposition, sputtering, and plating.

（第１実施例）
図１は、半導体装置２６の断面図を示している。図１において、参照番号２は、内部を冷却水が通過するヒートシンク、４は伝熱性グリース、６は絶縁性の伝熱板、８は伝熱板６の表面に形成されている導体パターン、１２ははんだ層、１４は半導体チップ、１６は半導体チップ１４の表面に形成されている表面電極、２２はワイヤ、２０は被覆層を示している。導体パターン８は伝熱板６の表面に形成されており、両者を総称して伝熱板１０という。表面電極１６は半導体チップ１４の表面に形成されており、両者を総称して半導体チップ１８という。
被覆層２０は、表面電極１６を被覆している層２０ａと、ワイヤ２２を被覆している層２０ｂで形成されている。両者は、一体に形成されている。
表面電極１６はアルミで形成されており、ワイヤ２２もアルミで形成されており、被覆層２０は銅で形成されている。被覆層２０の方が、表面電極１６やワイヤ２２よりも、熱伝導率が高い。被覆層２０は、表面電極１６にワイヤ２２をボンディングした後に、銅を蒸着して形成されている。蒸着法に代えて、スパッタ法を用いてもよいし、メッキ法を用いてもよい。被覆層２０は、金でもよいし、銀でもよい。
被覆層の２０の表面を樹脂等で被覆して封止してもよい。 (First embodiment)
FIG. 1 shows a cross-sectional view of the semiconductor device 26. In FIG. 1, reference numeral 2 is a heat sink through which cooling water passes, 4 is a heat transfer grease, 6 is an insulating heat transfer plate, 8 is a conductor pattern formed on the surface of the heat transfer plate 6, 12. Is a solder layer, 14 is a semiconductor chip, 16 is a surface electrode formed on the surface of the semiconductor chip 14, 22 is a wire, and 20 is a coating layer. The conductor pattern 8 is formed on the surface of the heat transfer plate 6 and is collectively referred to as a heat transfer plate 10. The surface electrode 16 is formed on the surface of the semiconductor chip 14, and both are collectively referred to as a semiconductor chip 18.
The covering layer 20 is formed of a layer 20 a covering the surface electrode 16 and a layer 20 b covering the wire 22. Both are integrally formed.
The surface electrode 16 is made of aluminum, the wire 22 is also made of aluminum, and the coating layer 20 is made of copper. The coating layer 20 has a higher thermal conductivity than the surface electrode 16 and the wire 22. The coating layer 20 is formed by evaporating copper after bonding the wire 22 to the surface electrode 16. Instead of the vapor deposition method, a sputtering method or a plating method may be used. The covering layer 20 may be gold or silver.
The surface of the coating layer 20 may be sealed with a resin or the like.

（第２実施例）
以下では、第１実施例と相違する部分のみを説明する。表面電極１６にワイヤ２２をボンディングしている点までは第１実施例と同じである。
第２実施例では、図２に示すように、ボンディング点２４の周囲にカーボンナノチューブを含む有機材料によって被覆層３０を形成している。具体的には、ボンディング点２４の周囲にカーボンナノチューブを含む液状樹脂をたらし、その後に固化することによって被覆層３０を形成している。
図３は、第２実施例の半導体装置３２の平面図を示し、１枚の表面電極１６に対して３本のワイヤ２２ａ〜２２ｃが接続されている。各々のボンディング点２４ａ〜２４ｃの周囲に被覆層３０ａ〜３０ｃを形成している。各々の被覆層３０ａ〜３０ｃは、隣接する被覆層から分断されている。この場合、使用する樹脂量を節約することができる。 (Second embodiment)
Below, only the part which is different from the first embodiment will be described. The process up to the point where the wire 22 is bonded to the surface electrode 16 is the same as that of the first embodiment.
In the second embodiment, as shown in FIG. 2, the coating layer 30 is formed around the bonding point 24 with an organic material containing carbon nanotubes. Specifically, the coating layer 30 is formed by placing a liquid resin containing carbon nanotubes around the bonding points 24 and then solidifying the resin.
FIG. 3 is a plan view of the semiconductor device 32 according to the second embodiment, and three wires 22 a to 22 c are connected to one surface electrode 16. Covering layers 30a to 30c are formed around the bonding points 24a to 24c. Each coating layer 30a-30c is divided from the adjacent coating layer. In this case, the amount of resin used can be saved.

（第３実施例）
図４は、第３実施例の半導体装置３４の平面図を示している。縦断面図は、図２に等しい。第３実施例の半導体装置３４では、１枚の表面電極１６に対して３本のワイヤ２２ａ〜２２ｃが接続されている。３箇所のボンディング点２４ａ〜２４ｃが、１枚の共通被覆層３０で被覆されている。この場合、表面電極１６の広い範囲に、ボンディング点２４ａ〜２４ｃで発生する熱を伝熱することができる。ボンディング点２４ａ〜２４ｃの過熱防止能力が高い。 (Third embodiment)
FIG. 4 is a plan view of the semiconductor device 34 of the third embodiment. The longitudinal sectional view is equivalent to FIG. In the semiconductor device 34 of the third embodiment, three wires 22 a to 22 c are connected to one surface electrode 16. Three bonding points 24 a to 24 c are covered with one common covering layer 30. In this case, heat generated at the bonding points 24 a to 24 c can be transferred to a wide range of the surface electrode 16. The overheating prevention capability of the bonding points 24a to 24c is high.

（第４実施例）
図５は、第４実施例の半導体装置４２の縦断面図を示している。第１実施例と相違する部分のみを説明する。第４実施例の半導体装置４２では、ボンディング前の表面電極１６の表面に、被覆層４０が形成されている。表面電極１６はアルミで形成されており、ワイヤ２２もアルミで形成されており、被覆層４０は銅で形成されている。被覆層４０の方が、表面電極１６やワイヤ２２よりも、熱伝導率が高い。被覆層２０は、表面電極１６に銅を蒸着して形成されている。蒸着法に代えて、スパッタ法を用いてもよいし、メッキ法を用いてもよい。被覆層２０は、表面電極１６よりも厚く形成されている。 (Fourth embodiment)
FIG. 5 shows a longitudinal sectional view of the semiconductor device 42 of the fourth embodiment. Only the differences from the first embodiment will be described. In the semiconductor device 42 of the fourth embodiment, the coating layer 40 is formed on the surface of the surface electrode 16 before bonding. The surface electrode 16 is made of aluminum, the wire 22 is also made of aluminum, and the covering layer 40 is made of copper. The coating layer 40 has a higher thermal conductivity than the surface electrode 16 and the wire 22. The covering layer 20 is formed by depositing copper on the surface electrode 16. Instead of the vapor deposition method, a sputtering method or a plating method may be used. The covering layer 20 is formed thicker than the surface electrode 16.

以上、本発明の具体例を詳細に説明したが、これらは例示にすぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。
本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時の請求項に記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。 Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

第１実施例の半導体装置の断面図。Sectional drawing of the semiconductor device of 1st Example. 第２実施例の半導体装置の断面図。Sectional drawing of the semiconductor device of 2nd Example. 第２実施例の半導体装置の平面図。The top view of the semiconductor device of 2nd Example. 第３実施例の半導体装置の平面図。The top view of the semiconductor device of 3rd Example. 第４実施例の半導体装置の断面図。Sectional drawing of the semiconductor device of 4th Example.

符号の説明Explanation of symbols

２：ヒートシンク
４：伝熱性グリース
６：伝熱板
８：配線パターン
１２：はんだ
１４：半導体チップ
１６：表面電極
２０：被覆層
２２：ワイヤ
３０：被覆層
４０：被覆層 2: heat sink 4: heat transfer grease 6: heat transfer plate 8: wiring pattern 12: solder 14: semiconductor chip 16: surface electrode 20: coating layer 22: wire 30: coating layer 40: coating layer

Claims (5)

半導体チップの表面電極にワイヤがボンディングされている半導体装置であり、
ワイヤがボンディングされている表面電極の表面に、表面電極よりも熱伝導率が高い材料の被覆層が形成されていることを特徴とする半導体装置。 A semiconductor device in which a wire is bonded to a surface electrode of a semiconductor chip,
A semiconductor device, wherein a coating layer made of a material having higher thermal conductivity than a surface electrode is formed on a surface of a surface electrode to which a wire is bonded. 半導体チップの表面電極に被覆層を介してワイヤがボンディングされている半導体装置であり、
表面電極の表面に、表面電極よりも熱伝導率が高い材料で表面電極よりも厚く形成されている被覆層が形成されていることを特徴とする半導体装置。 A semiconductor device in which a wire is bonded to a surface electrode of a semiconductor chip via a coating layer,
A semiconductor device, wherein a coating layer made of a material having a higher thermal conductivity than a surface electrode and thicker than the surface electrode is formed on a surface of the surface electrode. 前記被覆層が、カーボンナノチューブを含有する有機材料で形成されていることを特徴とする請求項１または２に記載の半導体装置。   The semiconductor device according to claim 1, wherein the coating layer is formed of an organic material containing carbon nanotubes. 同一表面電極に複数本のワイヤがボンディングされており、各々のボンディング点に形成されている被覆層が分断されていることを特徴とする請求項１から３のいずれか１項に記載の半導体装置。   4. The semiconductor device according to claim 1, wherein a plurality of wires are bonded to the same surface electrode, and a covering layer formed at each bonding point is divided. 5. . 同一表面電極に複数本のワイヤがボンディングされており、1枚の共通の被覆層が複数のボンディング点に亘って伸びていることを特徴とする請求項１から３のいずれか１項に記載の半導体装置。   The wire according to claim 1, wherein a plurality of wires are bonded to the same surface electrode, and one common covering layer extends over a plurality of bonding points. Semiconductor device.
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