CN115579734B - Manufacturing method of red light laser chip - Google Patents
Manufacturing method of red light laser chip Download PDFInfo
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- CN115579734B CN115579734B CN202211264116.7A CN202211264116A CN115579734B CN 115579734 B CN115579734 B CN 115579734B CN 202211264116 A CN202211264116 A CN 202211264116A CN 115579734 B CN115579734 B CN 115579734B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000004038 photonic crystal Substances 0.000 claims abstract description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000005253 cladding Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013308 plastic optical fiber Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Abstract
The invention discloses a manufacturing method of a red light laser chip, which comprises the following steps of adopting a metal organic chemical vapor deposition system to sequentially epitaxially grow a buffer layer, a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, a photonic crystal layer, an upper cladding layer and a contact layer on an n-type substrate; photoetching and defining a PCSEL table board, etching the PCSEL table board and growing a silicon dioxide insulating layer; a p-surface electrode window is formed in the silicon dioxide insulating layer; and depositing metal in the p-face electrode window, stripping out the annular electrode to form a p-face electrode, thinning the n-type substrate, and depositing metal to form an n-face electrode. The photonic crystal graph is manufactured by using nano imprinting, the purpose of mass production is achieved, the photonic crystal consisting of (Al0.1Ga) 0.53InP and air holes is formed by optimizing the secondary epitaxy condition, so that the light limiting capacity of the photonic crystal structure is improved, the light emergent direction of the prepared 650nm laser chip is emergent perpendicular to the direction of an epitaxial wafer, the area of a light emergent cavity surface is not limited, and the reliability of the device is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor laser chips, in particular to a manufacturing method of a red light laser chip.
Background
The red light semiconductor laser is widely used in the fields of plastic optical fiber communication, landscape lighting, air quality detection, medical treatment, laser display and the like due to the high photoelectric conversion efficiency. But is limited by the reliability problem caused by cavity surface catastrophe and the disadvantage of poor spot quality commonly existing in edge-emitting lasers, which increases the application cost in the aspects of manufacturing point light sources or coupling into optical fibers, etc.
The traditional red light lasers are all edge-emitting lasers, the light emitting area is small, the cavity surface power density is high, the cavity surface catastrophe damage is easy to occur, the reliability of the device is poor, in addition, the ridge width of the laser needs to be increased due to the fact that the power of the device is improved, multimode lasing is easy to occur on the wide ridge, and the output power of a single mode is limited.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide the preparation method of the red light laser chip epitaxial wafer, which has the advantages that the light emitting direction is perpendicular to the epitaxial wafer direction, the area of the light cavity surface is not limited, and the watt-level single-mode lasing can be realized, and the high reliability is realized.
In order to achieve the above purpose, the present invention provides the following technical solutions:
A manufacturing method of a red light laser chip comprises the following steps:
Step 1: epitaxially growing a buffer layer, (Al0.7Ga) 0.53InP lower cladding layer, (Al0.5Ga) 0.53InP lower waveguide layer, a strain quantum well active region, (Al0.5Ga) 0.53InP upper waveguide layer, (Al0.1Ga) 0.53InP layer and an InGaP layer on an n-type substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system in sequence;
Step 2: growing a first silicon dioxide hard mask;
step 3: spin coating photoresist;
step 4: manufacturing a photonic crystal mask in the photoresist;
step 5: transferring the photoresist mask pattern into the (Al0.1Ga) 0.53InP layer and the InGaP layer by adopting a dry etching method to form photonic crystal holes;
Step 6: carrying out secondary epitaxial growth (Al0.7Ga) on the cladding layers and the GaAs contact layers on the 0.53 InP;
step 7: growing a silicon dioxide hard mask on the epitaxial wafer;
Step 8: photoetching to define a PCSEL table-board, and etching off a silicon dioxide hard mask outside the PCSEL table-board area;
Step 9: etching out the PCSEL table board, etching the silicon dioxide hard mask in the region of the PCSEL table board, and regrowing the silicon dioxide insulating layer;
Step 10: a p-surface electrode window is formed in the silicon dioxide insulating layer;
Step 11: and depositing metal on the silicon dioxide insulating layer, stripping out the annular electrode to form a p-face electrode, thinning the n-type substrate, and depositing metal to form an n-face electrode.
As a further scheme of the invention: the photonic crystal mask in step 4 is fabricated using a nanoimprint process.
As a further scheme of the invention: in the step 6, the (Al0.7Ga) 0.53InP layer grows in two steps, the growth rate interval is 0.5-1.0nm/s when the second epitaxial growth (Al0.7Ga) 0.53InP layer starts, the thickness of the (Al0.7Ga) 0.53InP layer is 100-300nm, then the growth rate is reduced to 0.3nm/s, and the thickness of the (Al0.7Ga) 0.53InP layer continues to grow to be 1.6um.
As a further scheme of the invention: the photonic crystal structure consists of (al0.1ga) 0.53InP material and air holes.
As a further scheme of the invention: the thickness of the GaAs contact layer is less than 150nm.
As a further scheme of the invention: photolithography defines a PCSEL mesa size of 50-500um.
Compared with the prior art, the invention has the following beneficial effects: according to the invention, an active region and a waveguide structure are epitaxially grown by adopting a metal organic chemical vapor deposition method, a photonic crystal is manufactured by combining nano imprinting and dry etching to form a laser epitaxial wafer, a GaAs-based 650 nm-band red light PCSEL laser chip is manufactured by photoetching, oxidation and etching processes, a photonic crystal pattern is manufactured by using nano imprinting, the purpose of mass production is achieved, a photonic crystal consisting of (Al0.1Ga) 0.53InP and an air hole is formed by optimizing the condition of secondary epitaxy, so that the light limiting capacity of the photonic crystal structure is improved, the light emergent direction of the manufactured 650nm laser chip is emergent in the direction of the epitaxial wafer, the area of a light emergent cavity surface is not limited, the inherent cavity surface catastrophe damage problem of the traditional 650nm edge-emitting laser is solved, the reliability of the device is greatly improved, and in addition, the 650nm laser chip can realize watt-level single-mode laser emission by increasing the area of the PCSEL mesa, and the application field of the red light laser is greatly expanded.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, it being obvious that the drawings described below are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the overall structure of a red laser chip;
Fig. 2 is a schematic diagram of a base structure of a red light laser chip epitaxial wafer;
FIG. 3 is a schematic diagram of a photonic crystal mask structure;
FIG. 4 is a schematic diagram of photonic crystal holes;
FIG. 5 is a schematic illustration of a secondary epitaxy;
FIG. 6 is a schematic diagram of growing silicon oxide as a hard mask before etching pcsel a mesa;
FIG. 7 is a schematic diagram of a pcsel table top;
1. An n-type substrate; 2. a buffer layer; 3. a lower cladding layer; 4. a lower waveguide layer; 5. a strained quantum well active region; 6. an upper waveguide layer; 7. (al0.1ga) 0.53InP layer; 8. an InGaP layer; 9. a first silicon dioxide hard mask; 10. a photoresist; 11. a photonic crystal hole; 12. upper cladding layers; 13. a GaAs contact layer; 14. a silicon dioxide hard mask; 15. a silicon dioxide insulating layer; 16. a P-plane electrode; 17. an n-side electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is evident that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
An embodiment of a method for manufacturing a red laser chip according to the present invention will be further described with reference to fig. 1 to 7.
A manufacturing method of a red light laser chip comprises the following steps:
Step 1: a buffer layer 2, (Al0.7Ga) 0.53InP lower cladding layer 3, (Al0.5Ga) 0.53InP lower waveguide layer 4, a strain quantum well active region 5, (Al0.5Ga) 0.53InP upper waveguide layer 6, (Al0.1Ga) 0.53InP layer 7 and an InGaP layer 8 are sequentially epitaxially grown on an n-type substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
Step 2: growing a first silicon dioxide hard mask 9;
Step 3: spin-coating a photoresist 10;
Step 4: a photonic crystal mask is manufactured in the photoresist 10;
step 5: transferring the photoresist mask pattern into the (Al0.1Ga) 0.53InP layer 7 and the InGaP layer 8 by adopting a dry etching method to form a photonic crystal hole 11;
Step 6: a cladding layer 12 on the 0.53InP of the second epitaxial growth (Al0.7Ga) and a GaAs contact layer 13;
step 7: growing a silicon dioxide hard mask 14 on the epitaxial wafer;
Step 8: defining a PCSEL mesa by lithography, and etching off the silicon dioxide hard mask 14 outside the PCSEL mesa region;
Step 9: etching out the PCSEL mesa and etching away the silicon dioxide hard mask 14 in the region of the PCSEL mesa, regrowing the silicon dioxide insulating layer 15;
step 10: a p-surface electrode window is formed in the silicon dioxide insulating layer 15;
step 11: metal is deposited on the silicon dioxide insulating layer 15 and the annular electrode is stripped to form a p-face electrode 16, and the n-face electrode 17 is formed by depositing metal after the n-type substrate 1 is thinned.
Preferably, the photonic crystal mask in the step 4 is manufactured by adopting a nano-imprinting process, and the photonic crystal pattern is manufactured by using nano-imprinting, so that the aim of mass production is achieved.
Preferably, in step 6, the (Al0.7Ga) 0.53InP layer is grown in two steps, the growth rate interval is 0.5-1.0nm/s when the second epitaxial growth (Al0.7Ga) 0.53InP layer is started, the thickness of the (Al0.7Ga) 0.53InP layer is 100-300nm, then the growth rate is reduced to 0.3nm/s, and the thickness of the (Al0.7Ga) 0.53InP layer is continuously grown to 1.6um.
The photonic crystal composed of (Al0.7Ga) 0.53InP and air holes is formed by optimizing the secondary epitaxy condition, so that the light limiting capacity of the photonic crystal structure is improved, the light emergent direction of the prepared 650nm laser chip is emergent perpendicular to the direction of an epitaxial wafer, the area of a light emergent cavity surface is not limited, the inherent cavity surface catastrophe damage problem of the traditional 650nm edge-emitting laser is solved, and the reliability of the device is greatly improved.
Preferably, the photonic crystal structure consists of (al0.1ga) 0.53InP material and air holes.
Preferably, the thickness of the GaAs contact layer 13 is less than 150nm, and the GaAs contact layer 13 is set to be less than 150nm, so that the absorption of light with a wavelength of 650nm or so by this layer is relatively small, thereby obtaining higher light output.
Preferably, the PCSEL mesa size is defined by lithography as 50-500um.
Embodiment two:
A manufacturing method of a red light laser chip comprises the following steps:
Step 1: a buffer layer 2, (Al0.7Ga) 0.53InP lower cladding layer 3, (Al0.5Ga) 0.53InP lower waveguide layer 4, a strain quantum well active region 5, (Al0.5Ga) 0.53InP upper waveguide layer 6, (Al0.1Ga) 0.53InP layer 7 and an InGaP layer 8 are sequentially epitaxially grown on an n-type substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
Step 2: growing a first silicon dioxide hard mask 9;
Step 3: spin-coating a photoresist 10;
Step 4: a photonic crystal mask is manufactured in the photoresist 10;
step 5: transferring the photoresist mask pattern into the (Al0.1Ga) 0.53InP layer 7 and the InGaP layer 8 by adopting a dry etching method to form a photonic crystal hole 11;
Step 6: a cladding layer 12 on the 0.53InP of the second epitaxial growth (Al0.7Ga) and a GaAs contact layer 13;
step 7: growing a silicon dioxide hard mask 14 on the epitaxial wafer;
Step 8: defining a PCSEL mesa by lithography, and etching off the silicon dioxide hard mask 14 outside the PCSEL mesa region;
Step 9: etching out the PCSEL mesa and etching away the silicon dioxide hard mask 14 in the region of the PCSEL mesa, regrowing the silicon dioxide insulating layer 15;
step 10: a p-surface electrode window is formed in the silicon dioxide insulating layer 15;
step 11: metal is deposited on the silicon dioxide insulating layer 15 and the annular electrode is stripped to form a p-face electrode 16, and the n-face electrode 17 is formed by depositing metal after the n-type substrate 1 is thinned.
Preferably, the photonic crystal mask in the step 4 is manufactured by adopting a nano-imprinting process, and the photonic crystal pattern is manufactured by using nano-imprinting, so that the aim of mass production is achieved.
Preferably, in the step 6, (Al0.7Ga) 0.53InP layer is grown in two steps, the growth rate interval is 0.8nm/s when the second epitaxial growth (Al0.7Ga) 0.53InP layer is started, the thickness of the (Al0.7Ga) 0.53InP layer is 200nm, then the growth rate is reduced to 0.3nm/s, and the thickness of the (Al0.7Ga) 0.53InP layer is continuously grown to 1.6um; the photonic crystal composed of (Al0.7Ga) 0.53InP and air holes is formed by optimizing the secondary epitaxy condition, so that the light limiting capacity of the photonic crystal structure is improved, the light emergent direction of the prepared 650nm laser chip is emergent perpendicular to the direction of an epitaxial wafer, the area of a light emergent cavity surface is not limited, the inherent cavity surface catastrophe damage problem of the traditional 650nm edge-emitting laser is solved, and the reliability of the device is greatly improved.
Preferably, the photonic crystal structure consists of (al0.1ga) 0.53InP material and air holes.
Preferably, the thickness of the GaAs contact layer 13 is 100nm.
Preferably, the size of the PCSEL table surface is defined to be 50-500um by photoetching, and the 650nm laser chip can realize watt-level single-mode lasing by increasing the area of the PCSEL table surface, so that the application field of a red light laser is greatly expanded.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (5)
1. The manufacturing method of the red light laser chip is characterized by comprising the following steps of:
step 1: a buffer layer (2), an Al 0.7Ga0.3)0.53In0.47 P lower cladding layer (3), an Al 0.5Ga0.5)0.53In0.47 P lower waveguide layer (4), a strain quantum well active region (5), an Al 0.5Ga0.5)0.53In0.47 P upper waveguide layer (6), an Al 0.1Ga0.9)0.53In0.47 P layer (7) and an InGaP layer (8) are sequentially epitaxially grown on an n-type substrate (1) by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
Step 2: growing a first silicon dioxide hard mask (9);
step 3: spin-coating a photoresist (10);
Step 4: manufacturing a photonic crystal mask in the photoresist (10);
Step 5: transferring the photoresist mask pattern into the (Al 0.1Ga0.9)0.53In0.47 P layer (7) and the InGaP layer (8) by adopting a dry etching method to form a photonic crystal hole (11);
Step 6: the second epitaxial growth (cladding layer (12) and GaAs contact layer (13) on Al 0.1Ga0.9)0.53In0.47 P, wherein (Al 0.7Ga0.3)0.53In0.47 P layer grows in two steps, the growth rate interval when starting the second epitaxial growth (Al 0.7Ga0.3)0.53In0.47 P layer is 0.5-1.0nm/s, (the thickness of Al 0.7Ga0.3)0.53In0.47 P layer is 100-300nm, then the growth rate is reduced to 0.3nm/s, the thickness of Al 0.7Ga0.3)0.53In0.47 P layer is 1.6um;
step 7: growing a silicon dioxide hard mask (14) on the epitaxial wafer;
Step 8: defining a PCSEL mesa by lithography, etching off a silicon dioxide hard mask (14) outside the PCSEL mesa region;
Step 9: etching out the PCSEL mesa and etching away the silicon dioxide hard mask (14) in the region of the PCSEL mesa, regrowing the silicon dioxide insulating layer (15);
step 10: a p-surface electrode window is formed in the silicon dioxide insulating layer (15);
Step 11: and depositing metal on the silicon dioxide insulating layer (15) and stripping out the annular electrode to form a p-face electrode (16), thinning the n-type substrate (1), and depositing metal to form an n-face electrode (17).
2. The method of claim 1, wherein the photonic crystal mask in step 4 is fabricated by a nanoimprint process.
3. The method of manufacturing a red light laser chip according to claim 2, wherein the photonic crystal structure is composed of (Al 0.1Ga0.9)0.53In0.47 P material and air holes.
4. A method of manufacturing a red laser chip according to claim 3, characterized in that the GaAs contact layer (13) has a thickness of less than 150nm.
5. The method of claim 4, wherein the PCSEL mesa is 50-500um in size.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211264116.7A CN115579734B (en) | 2022-10-14 | Manufacturing method of red light laser chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211264116.7A CN115579734B (en) | 2022-10-14 | Manufacturing method of red light laser chip |
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| CN115579734A CN115579734A (en) | 2023-01-06 |
| CN115579734B true CN115579734B (en) | 2024-07-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113745961A (en) * | 2021-08-31 | 2021-12-03 | 江苏华兴激光科技有限公司 | GaAs-based photonic crystal laser and manufacturing method thereof |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113745961A (en) * | 2021-08-31 | 2021-12-03 | 江苏华兴激光科技有限公司 | GaAs-based photonic crystal laser and manufacturing method thereof |
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