CN115579734A - Manufacturing method of red light laser chip - Google Patents
Manufacturing method of red light laser chip Download PDFInfo
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- CN115579734A CN115579734A CN202211264116.7A CN202211264116A CN115579734A CN 115579734 A CN115579734 A CN 115579734A CN 202211264116 A CN202211264116 A CN 202211264116A CN 115579734 A CN115579734 A CN 115579734A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a method for manufacturing a red light laser chip, which comprises the following steps of sequentially epitaxially growing a buffer layer, a lower clipping layer, a lower waveguide layer, an active region, an upper waveguide layer, a photonic crystal layer, an upper clipping layer and a contact layer on an n-type substrate by adopting a metal organic chemical vapor deposition system; defining a PCSEL table-board by photoetching, etching the PCSEL table-board and growing a silicon dioxide insulating layer; opening a p-surface electrode window in the silicon dioxide insulating layer; and depositing metal on the p-side electrode window and stripping the annular electrode to form a p-side electrode, and depositing metal to form an n-side electrode after the n-type substrate is thinned. The photonic crystal pattern is manufactured by nanoimprint lithography, the purpose of mass production is achieved, the photonic crystal composed of (Al0.1Ga) 0.53InP and air holes is formed by optimizing the condition of secondary epitaxy, so that the light limiting capability of the photonic crystal structure is improved, the light emitting direction of the prepared 650nm laser chip is vertical to the direction of an epitaxial wafer to emit, the area of the light emitting cavity surface is not limited, and the reliability of the device is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor laser chips, in particular to a method for manufacturing a red light laser chip.
Background
The red light semiconductor laser is widely used in the fields of plastic optical fiber communication, landscape lighting, air quality detection, medical treatment, laser display and the like due to high photoelectric conversion efficiency. But is limited by the reliability problem caused by cavity surface catastrophe and the defect of poor spot quality of the edge-emitting laser, and the application cost is increased in the aspects of manufacturing point light sources or coupling into optical fibers and the like.
Traditional red laser all is limit emitting laser, and the light-emitting area is little, and cavity surface power density is high, appears the cavity surface catastrophe easily and damages and make the device reliability relatively poor, in addition, because improve device power and need increase laser instrument ridge width, multimode lasing has appeared easily in the wide ridge, has restricted single mode's output.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a preparation method of a red light laser chip epitaxial wafer, which has the advantages that the light emitting direction is vertical to the epitaxial wafer direction for emitting, the area of the optical cavity surface is not limited, the watt-level single-mode lasing can be realized, and the reliability is high.
In order to achieve the purpose, the invention provides the following technical scheme:
a manufacturing method of a red laser chip comprises the following steps:
step 1: sequentially epitaxially growing a buffer layer, an (Al0.7Ga) 0.53InP lower cladding layer, an (Al0.5Ga) 0.53InP lower waveguide layer, a strain quantum well active region, an (Al0.5Ga) 0.53InP upper waveguide layer, an (Al0.1Ga) 0.53InP layer and an InGaP layer on an n-type substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
step 2: growing a first silicon dioxide hard mask;
and 3, step 3: spin-coating a photoresist;
and 4, step 4: manufacturing a photonic crystal mask in the photoresist;
and 5: transferring the photoresist mask pattern to the (Al0.1Ga) 0.53InP layer and the InGaP layer by adopting a dry etching method to form a photonic crystal hole;
step 6: secondary epitaxial growth (Al0.7Ga) 0.53InP upper cladding layer and GaAs contact layer;
and 7: growing a silicon dioxide hard mask on the epitaxial wafer;
and step 8: photoetching to define a PCSEL table-board, and etching away the silicon dioxide hard mask outside the area of the PCSEL table-board;
and step 9: etching a PCSEL mesa, corroding a silicon dioxide hard mask in the PCSEL mesa region, and regrowing a silicon dioxide insulating layer;
step 10: opening a p-surface electrode window in the silicon dioxide insulating layer;
step 11: and depositing metal on the silicon dioxide insulating layer, stripping the annular electrode to form a p-side electrode, and depositing metal to form an n-side electrode after the n-type substrate is thinned.
As a further scheme of the invention: and (5) manufacturing the photonic crystal mask in the step (4) by adopting a nano-imprinting process.
As a further scheme of the invention: in step 6, (Al0.7Ga) 0.53InP layer is grown in two steps, the growth rate interval when the second epitaxial growth of (Al0.7Ga) 0.53InP layer is started is 0.5-1.0nm/s, the thickness of (Al0.7Ga) 0.53InP layer is 100-300nm, then the growth speed is reduced to 0.3nm/s, and the thickness of (Al0.7Ga) 0.53InP layer is continuously grown to 1.6um.
As a further scheme of the invention: the photonic crystal structure consists of (Al0.1Ga) 0.53InP material and air holes.
As a further scheme of the invention: the thickness of the GaAs contact layer is less than 150nm.
As a further scheme of the invention: the PCSEL mesa size is defined by photoetching to be 50-500um.
Compared with the prior art, the invention has the following beneficial effects: the invention adopts a metal organic chemical vapor deposition method to epitaxially grow an active region and a waveguide structure, combines nano-imprinting and dry etching to manufacture photonic crystals to form a laser epitaxial wafer, manufactures a GaAs-based 650nm waveband red light PCSEL laser chip through photoetching, oxidation and etching processes, manufactures photonic crystal patterns through nano-imprinting, achieves the purpose of mass production, forms the photonic crystals consisting of (Al0.1Ga) 0.53 and air holes by optimizing the conditions of secondary epitaxy, thereby improving the light limiting capability of the photonic crystal structure, the light emitting direction of the manufactured 650nm laser chip is vertical to the direction of the epitaxial wafer to emit, the area of the light emitting cavity surface is not limited, the problem of catastrophic damage of the cavity surface inherent in the traditional 650nm edge emitting laser is solved, the reliability of the device is greatly improved, in addition, the 650nm laser chip can realize tile-level lasing mode by increasing the area of the PCSEL mesa, and the application field of the red light laser is greatly expanded.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of the overall structure of a red laser chip;
FIG. 2 is a schematic diagram of a base structure of an epitaxial wafer of a red laser chip;
FIG. 3 is a schematic diagram of a photonic crystal mask structure;
FIG. 4 is a schematic view of photonic crystal holes;
FIG. 5 is a schematic diagram of a second epitaxy;
FIG. 6 is a schematic diagram of growing silicon oxide as a hard mask before etching the pcsel mesa;
FIG. 7 is a schematic view of a pcsel table;
1. an n-type substrate; 2. a buffer layer; 3. a lower clipping layer; 4. a lower waveguide layer; 5. a strained quantum well active region; 6. an upper waveguide layer; 7. a (al0.1ga) 0.53InP layer; 8. an InGaP layer; 9. a first silicon dioxide hard mask; 10. photoresist; 11. a photonic crystal aperture; 12. an upper clipping layer; 13. a GaAs contact layer; 14. a silicon dioxide hard mask; 15. a silicon dioxide insulating layer; 16. a P-side electrode; 17. an n-face electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
An embodiment of a method for manufacturing a red laser chip according to the invention is further described with reference to fig. 1 to 7.
A manufacturing method of a red light laser chip comprises the following steps:
step 1: sequentially epitaxially growing a buffer layer 2, an (Al0.7Ga) 0.53InP lower cladding layer 3, an (Al0.5Ga) 0.53InP lower waveguide layer 4, a strained quantum well active region 5, an (Al0.5Ga) 0.53InP upper waveguide layer 6, an (Al0.1Ga) 0.53InP layer 7 and an InGaP layer 8 on an n-type substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
and 2, step: growing a first silicon dioxide hard mask 9;
and step 3: spin-coating a photoresist 10;
and 4, step 4: manufacturing a photonic crystal mask in the photoresist 10;
and 5: transferring the photoresist mask pattern to the (Al0.1Ga) 0.53InP layer 7 and the InGaP layer 8 by adopting a dry etching method to form a photonic crystal hole 11;
and 6: a second epitaxial growth (al0.7ga) 0.53InP upper cladding layer 12 and GaAs contact layer 13;
and 7: growing a silicon dioxide hard mask 14 on the epitaxial wafer;
and 8: lithographically defining a PCSEL mesa, and etching away the silicon dioxide hard mask 14 outside the PCSEL mesa region;
and step 9: etching a PCSEL table top, corroding the silicon dioxide hard mask 14 in the PCSEL table top area, and regrowing a silicon dioxide insulating layer 15;
step 10: opening a p-side electrode window in the silicon dioxide insulating layer 15;
step 11: and depositing metal on the silicon dioxide insulating layer 15 and stripping the annular electrode to form a p-surface electrode 16, and depositing metal to form an n-surface electrode 17 after the n-type substrate 1 is thinned.
Preferably, the photonic crystal mask in the step 4 is manufactured by adopting a nano-imprinting process, and the photonic crystal pattern is manufactured by using nano-imprinting, so that the purpose of mass production is achieved.
Preferably, in step 6, the (al0.7ga) 0.53InP layer is grown in two steps, the growth rate interval when the second epitaxial growth of the (al0.7ga) 0.53InP layer is started is 0.5-1.0nm/s and the thickness of the (al0.7ga) 0.53InP layer is 100-300nm, then the growth rate is reduced to 0.3nm/s and the growth of the (al0.7ga) 0.53InP layer is continued to be 1.6um.
The photonic crystal consisting of (Al0.7Ga) 0.53InP and air holes is formed by optimizing the conditions of secondary epitaxy, so that the light limiting capability of the photonic crystal structure is improved, the light emitting direction of the prepared 650nm laser chip is vertical to the direction of an epitaxial wafer to emit, the area of a light emitting cavity surface is not limited, the problem of cavity surface catastrophic damage inherent in the traditional 650nm edge emitting laser is solved, and the reliability of the device is greatly improved.
Preferably, the photonic crystal structure is composed of (al0.1ga) 0.53InP material and air holes.
Preferably, the thickness of the GaAs contact layer 13 is less than 150nm, and the thickness of the GaAs contact layer 13 is less than 150nm, so that the layer has a relatively small absorption of light with a wavelength of about 650nm, and thus a relatively high light output power is obtained.
Preferably, the photolithography defines a PCSEL mesa size of 50-500um.
Example two:
a manufacturing method of a red laser chip comprises the following steps:
step 1: epitaxially growing a buffer layer 2, an (Al0.7Ga) 0.53InP lower cladding layer 3, an (Al0.5Ga) 0.53InP lower waveguide layer 4, a strained quantum well active region 5, an (Al0.5Ga) 0.53InP upper waveguide layer 6, an (Al0.1Ga) 0.53InP layer 7 and an InGaP layer 8 on an n-type substrate 1 in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
and 2, step: growing a first silicon dioxide hard mask 9;
and 3, step 3: spin-coating a photoresist 10;
and 4, step 4: manufacturing a photonic crystal mask in the photoresist 10;
and 5: transferring the photoresist mask pattern to the (Al0.1Ga) 0.53InP layer 7 and the InGaP layer 8 by adopting a dry etching method to form a photonic crystal hole 11;
step 6: a second epitaxial growth (al0.7ga) 0.53InP upper cladding layer 12 and GaAs contact layer 13;
and 7: growing a silicon dioxide hard mask 14 on the epitaxial wafer;
and 8: lithographically defining a PCSEL mesa, and etching away the silicon dioxide hard mask 14 outside the PCSEL mesa region;
and step 9: etching out a PCSEL mesa, etching off the silicon dioxide hard mask 14 in the PCSEL mesa region, and regrowing a silicon dioxide insulating layer 15;
step 10: a p-side electrode window is formed in the silicon dioxide insulating layer 15;
step 11: depositing metal on the silicon dioxide insulating layer 15 and stripping the annular electrode to form a p-side electrode 16, and depositing metal to form an n-side electrode 17 after the n-type substrate 1 is thinned.
Preferably, the photonic crystal mask in the step 4 is manufactured by adopting a nano-imprinting process, and the photonic crystal pattern is manufactured by using nano-imprinting, so that the purpose of mass production is achieved.
Preferably, in step 6, the (al0.7ga) 0.53InP layer is grown in two steps, the growth rate interval when the second epitaxial growth of the (al0.7ga) 0.53InP layer is started is 0.8nm/s, the thickness of the (al0.7ga) 0.53InP layer is 200nm, then the growth rate is reduced to 0.3nm/s, and the thickness of the (al0.7ga) 0.53InP layer is continued to be 1.6um; the photonic crystal consisting of (Al0.7Ga) 0.53InP and air holes is formed by optimizing the conditions of secondary epitaxy, so that the light limiting capability of the photonic crystal structure is improved, the light emitting direction of the prepared 650nm laser chip is vertical to the direction of an epitaxial wafer to emit, the area of a light emitting cavity surface is not limited, the problem of cavity surface catastrophic damage inherent in the traditional 650nm edge emitting laser is solved, and the reliability of the device is greatly improved.
Preferably, the photonic crystal structure is composed of (al0.1ga) 0.53InP material and air holes.
Preferably, the thickness of the GaAs contact layer 13 is 100nm.
Preferably, the size of the PCSEL table top defined by photoetching is 50-500um, and by increasing the area of the PCSEL table top, the 650nm laser chip can realize watt-level single-mode lasing, thereby greatly expanding the application field of red lasers.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (6)
1. A manufacturing method of a red laser chip is characterized by comprising the following steps:
step 1: epitaxially growing a buffer layer (2), an Al0.7Ga 0.53InP lower cladding layer (3), an Al0.5Ga 0.53InP lower waveguide layer (4), a strain quantum well active region (5), an Al0.5Ga 0.53InP upper waveguide layer (6), an Al0.1Ga 0.53InP layer (7) and an InGaP layer (8) on an n-type substrate (1) in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) system;
and 2, step: growing a first silicon dioxide hard mask (9);
and step 3: spin-coating a photoresist (10);
and 4, step 4: manufacturing a photonic crystal mask in the photoresist (10);
and 5: transferring the photoresist mask pattern to the (Al0.1Ga) 0.53InP layer (7) and the InGaP layer (8) by adopting a dry etching method to form a photonic crystal hole (11);
and 6: a second epitaxial growth (Al0.7Ga) 0.53InP upper cladding layer (12) and GaAs contact layer (13);
and 7: growing a silicon dioxide hard mask (14) on the epitaxial wafer;
and step 8: lithographically defining a PCSEL mesa, and etching away the silicon dioxide hard mask (14) outside the PCSEL mesa region;
and step 9: etching out the PCSEL mesa, etching off the silicon dioxide hard mask (14) in the PCSEL mesa area, and regrowing a silicon dioxide insulating layer (15);
step 10: opening a p-side electrode window in the silicon dioxide insulating layer (15);
step 11: and depositing metal on the silicon dioxide insulating layer (15) and stripping the annular electrode to form a p-surface electrode (16), and depositing metal to form an n-surface electrode (17) after the n-type substrate (1) is thinned.
2. The method of claim 1, wherein the photonic crystal mask of step 4 is fabricated by a nanoimprint process.
3. The method of claim 2, wherein the (Al0.7Ga) 0.53InP layer is grown in two steps in step 6, the growth rate range for starting the second epitaxial growth of the (Al0.7Ga) 0.53InP layer is 0.5-1.0nm/s, the thickness of the (Al0.7Ga) 0.53InP layer is 100-300nm, the growth rate is reduced to 0.3nm/s, and the (Al0.7Ga) 0.53InP layer is grown to 1.6um.
4. The method as claimed in claim 3, wherein the photonic crystal structure comprises (Al0.1Ga) 0.53InP and air holes.
5. The method for manufacturing a red laser chip according to claim 4, wherein the thickness of the GaAs contact layer (13) is less than 150nm.
6. The method of claim 5, wherein the PCSEL mesa is defined by photolithography to be 50-500um.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115995757A (en) * | 2023-03-23 | 2023-04-21 | 香港中文大学（深圳） | Photonic crystal electric pumping surface emitting laser and preparation method thereof |
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| CN113745961A (en) * | 2021-08-31 | 2021-12-03 | 江苏华兴激光科技有限公司 | GaAs-based photonic crystal laser and manufacturing method thereof |
| CN113745960A (en) * | 2021-08-31 | 2021-12-03 | 江苏华兴激光科技有限公司 | Photonic crystal surface emitting laser and manufacturing method thereof |
| WO2022095455A1 (en) * | 2020-11-08 | 2022-05-12 | Phosertek Corporation | Laser device and method of manufacturing the same |
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| WO2022095455A1 (en) * | 2020-11-08 | 2022-05-12 | Phosertek Corporation | Laser device and method of manufacturing the same |
| CN113745961A (en) * | 2021-08-31 | 2021-12-03 | 江苏华兴激光科技有限公司 | GaAs-based photonic crystal laser and manufacturing method thereof |
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| CN115995757A (en) * | 2023-03-23 | 2023-04-21 | 香港中文大学（深圳） | Photonic crystal electric pumping surface emitting laser and preparation method thereof |
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