CN111293583B - High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof - Google Patents
High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof Download PDFInfo
- Publication number
- CN111293583B CN111293583B CN202010112797.XA CN202010112797A CN111293583B CN 111293583 B CN111293583 B CN 111293583B CN 202010112797 A CN202010112797 A CN 202010112797A CN 111293583 B CN111293583 B CN 111293583B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- diameter
- ring
- circular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a high-power long-wavelength vertical cavity surface emitting laser array and a manufacturing method thereof.A heat dissipation layer is arranged on an epitaxial wafer, and a P-surface metal heat dissipation electrode layer is deposited on a P-type DBR reflector, so that the heat dissipation capacity of a light-emitting unit and the array is improved, the use reliability and the maximum output power are improved, and the performance of a single light-emitting unit and the array performance are improved.
Description
Technical Field
The invention relates to the field of semiconductor lasers, in particular to a high-power long-wavelength vertical cavity surface emitting laser array and a manufacturing method thereof.
Background
Intellectualization is a high-level stage of informatization development, so that the life style of the human society is thoroughly changed, and the intellectualization is an inevitable development trend of the human society. The intelligent perception technology is a core technology of intellectualization and becomes the most core element for human to comprehensively perceive nature.
In the application of various intelligent sensing technologies, such as vehicle-mounted and airborne laser radars, atomic gyros, magnetoencephalography, AR/VR and the like, the module is required to have the characteristics of low cost and monolithic type. The semiconductor surface emitting laser has the characteristics of miniaturization, low cost, low power consumption and high quality, and becomes a preferred scheme of a signal emitting light source of a plurality of intelligent sensing technologies.
The surface-emitting laser radar light source chip adopted in the existing scheme mainly uses a vertical cavity surface-emitting laser with the wave band of 910-. The long-wavelength surface emitting laser has the advantages of working in a safe wave band of human eyes, small environment absorption and long transmission distance, and is a potential alternative scheme in the future intelligent sensing technology.
The traditional preparation technology of a long-wavelength Vertical Cavity Surface Emitting Laser (VCSEL) is based on an indium phosphide (InP) material system and faces the problems of large resistance of a P-type InP layer, low reflectivity of a DBR reflector, poor heat dissipation performance and the like. In addition, when the diameter of the light emitting unit of the array device exceeds 30um, the problem of uneven carrier diffusion is faced, so that the carrier concentration at the center of the light emitting unit is low, and the output power of the array device is limited.
Therefore, how to realize a high-efficiency heat dissipation structure and a uniform carrier injection structure of a high-power long-wavelength vertical cavity surface emitting laser becomes a problem to be solved by technical personnel in the field of surface emitting lasers.
Disclosure of Invention
The invention provides a method for manufacturing a high-power long-wavelength vertical cavity surface emitting laser array, which improves the heat dissipation capacity of a single device and the array and improves the performance of the device.
In order to solve the above technical problem, the method for manufacturing a high-power long-wavelength vertical cavity surface emitting laser array provided by the invention comprises the following steps:
s1, depositing and growing an N-type DBR reflector layer, a quantum well active layer, a tunneling conduction layer and an N-type InP heat dissipation layer on the N-type InP substrate layer in sequence to form an epitaxial wafer;
s2, depositing a proton implantation mask layer on the front surface of the epitaxial wafer, and exposing and developing the proton implantation mask layer to obtain a desired array pattern structure;
s3, performing proton implantation on the epitaxial wafer and enabling the proton to reach the lower surface of the tunneling conducting layer to form an insulated proton implantation area and a conductive non-proton implantation area;
s4, after removing the proton implantation mask layer, depositing a P-type dielectric film DBR reflector on the surface of the N-type InP heat dissipation layer;
s5, etching an electrode ring with a preset shape on the P-type dielectric film DBR reflector;
and S6, depositing a P-surface metal heat dissipation electrode layer on the P-type dielectric film DBR reflector.
S7, performing back thinning and polishing on the N-type InP substrate layer, depositing an N-side electrode layer to form a light-emitting unit, and forming a laser array by using a plurality of light-emitting units;
the P-side metal heat dissipation electrode layer comprises a titanium adhesion metal layer with the thickness of 100nm-200nm, a platinum barrier metal layer with the thickness of 40 nm-60 nm and a gold electric conduction metal layer with the thickness of 3 mu m-5 mu m which are sequentially arranged from bottom to top;
the diameter range of the light-emitting unit is 30-70 mu m;
the light-emitting unit comprises an insulating ring which is concentric in circle center and used for limiting current, the outer diameter of the insulating ring is the same as that of the light-emitting unit, and the difference value between the outer diameter of the light-emitting unit and the inner diameter of the insulating ring is 4-6 mu m;
the P-type dielectric film DBR reflector is a circular P-type dielectric film DBR reflector and is concentric with the light-emitting unit, and the diameter difference between the diameter of the light-emitting unit and the diameter of the circular P-type dielectric film DBR reflector is 8-10 mu m;
the electrode ring comprises a first circular ring, a second circular ring and a third circular ring which are concentric with the light-emitting unit from inside to outside, the diameter of the inner ring of the first circular ring is 1/4-1/3 of the diameter of the circular P-type dielectric film DBR reflector, and the width of the first circular ring is 1-3 mu m; the diameter of the inner ring of the second circular ring is 1/2-2/3 of the diameter of the circular P-type dielectric film DBR reflector, and the width of the second circular ring is 1-3 mu m; the diameter of the inner ring of the third ring is equal to the diameter minus 4-6 mu m of the circular P-type dielectric film DBR reflector, and the width of the third ring is 1-3 mu m.
In addition, the embodiment of the invention also provides a high-power long-wavelength vertical cavity surface emitting laser array, which comprises light emitting units manufactured by the high-power long-wavelength vertical cavity surface emitting laser array manufacturing method, wherein the light emitting units form the laser array.
The laser device comprises a circular central light emitting group positioned in the center and 6-8 fan-shaped laser areas arranged around the circular central light emitting group, wherein the number of light emitting units of each fan-shaped laser area is increased along with the increase of the distance from the circular central light emitting group.
The circular central light-emitting group comprises 6-8 light-emitting units, and the diameter of the circular central light-emitting group is 200-250 micrometers.
The interval between adjacent fan-shaped laser areas is 20-40 mu m, and the fan-shaped laser areas are divided into 7-9 layers according to the central distance from the array and are equidistant between the adjacent layers.
Compared with the prior art, the method for manufacturing the high-power long-wavelength vertical cavity surface emitting laser array provided by the embodiment of the invention has the following advantages:
according to the manufacturing method of the high-power long-wavelength vertical-cavity surface-emitting laser array, the heat dissipation layer is arranged on the epitaxial wafer, and the P-surface metal heat dissipation electrode layer is deposited on the P-type DBR reflector, so that the heat dissipation capacity of the light-emitting unit and the array is improved, the use reliability and the maximum output power are improved, and the performance of a single light-emitting unit and the array performance are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating steps of a method for fabricating a high power long wavelength VCSEL array according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a longitudinal cross-sectional structure of a light-emitting unit of the method for fabricating a high power long wavelength VCSEL array provided herein;
fig. 3 is a schematic structural diagram of a photolithography plate according to the method for manufacturing a high-power long-wavelength vcsel array.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-3, fig. 1 is a schematic flow chart illustrating steps of a method for fabricating a high power long wavelength vcsel array according to an embodiment of the present disclosure; FIG. 2 is a schematic diagram of a longitudinal cross-sectional structure of a light-emitting unit of the method for fabricating a high power long wavelength VCSEL array provided herein; fig. 3 is a schematic structural diagram of a photolithography plate according to the method for manufacturing a high-power long-wavelength vcsel array.
In one embodiment, the method for fabricating a high power long wavelength vertical cavity surface emitting laser array provided in the present invention comprises:
s1, depositing and growing an N-type DBR mirror layer 20, a quantum well active layer 30, a tunneling conduction layer 50 and an N-type InP heat dissipation layer 60 on the N-type InP substrate layer 10 in sequence to form an epitaxial wafer; the components and the thickness of each layer of the epitaxial wafer are not limited in the invention, and the epitaxial wafer can be structured by adopting the prior art, the thickness range of the N-type InP substrate is generally 100-150 micrometers (inclusive), the doping agent is Zn, and the doping concentration is 2e18cm-3The N-type DBR reflector is integrated with the N-type substrate In an epitaxial mode, the N-type DBR reflector comprises a 30-period InAlGaAs/InP structure, the In component is 0.53, the Ga component is 0.47, the thickness of each layer is one-fourth of the laser lasing wavelength divided by the refractive index of the material, and the total thickness ranges from 7 mu m to 10 mu m and comprises end point values; the quantum well active layer 30 is epitaxially integrated with the N-type DBR mirror, and sequentially comprises an N-type InP electronic confinement layer, an InGaAsP quantum well, an InP barrier layer, and a P-type InP electronic confinement layer; the InGaAsP quantum well is intrinsic, the thickness range is 5 nm-15 nm and includes end points, the In component range is 0.65-0.9 and includes end points, the InP barrier is intrinsic, the thickness range is 5 nm-50 nm and includes end points; the thickness range of the N-type electronic confinement layer is 100 nm-500 nm, the N-type electronic confinement layer comprises the following end values, the dopant is Zn, and the doping concentration range is 1e16cm-3~1e17cm-3The thickness range of the P-type InP electronic confinement layer is 100 nm-500 nm, the thickness range includes the end points, the doping agent is C, and the doping concentration range is 1e16cm-3~5e16cm-3Adjusting the thickness of the N-type InP electronic limiting layer and the P-type InP electronic limiting layer to make the total thickness of the quantum well active layer 30 be one-half of the laser emission wavelength divided by the effective refractive index of the quantum well active layer 30; the tunneling conducting layer 50 includes a heavily doped P-type InP layer and a heavily doped N-type InP layer. The thickness range of the heavily doped P-type InP layer is 8-15 nm, including the end points, the doping agent is C, and the doping concentration is 5e19cm-3~1e20cm-3Inclusive of the endpoint values; the heavily doped N-type InP layerIs arranged on the heavily doped P-type InP, has a thickness of 15-30 nm, including the end point value, adopts Zn as a dopant and has a doping concentration of 1e19cm-3~3e19cm-3Inclusive of the endpoint values; the N-type InP heat dissipation layer 60 is 500 nm-3 mu m thick and comprises end points, the dopant is Zn, and the doping concentration is 1e16cm-3~3e18cm-3Inclusive of the endpoint values; the insulating ring 40 is used for limiting current and is prepared by a proton injection method, and the injection depth is from the upper surface of the N-type heat dissipation layer to the lower surface of the tunneling conduction layer 50;
s2, depositing a proton implantation mask layer on the front surface of the epitaxial wafer, and exposing and developing the proton implantation mask layer to obtain a desired array pattern structure; in the process, the mask layer is used for shielding, the rest area is insulated, the whole wafer is divided, the range of the last light-emitting unit is determined in each area, and parameters such as the distance between the light-emitting units are determined.
S3, performing proton implantation on the epitaxial wafer and reaching the lower surface of the tunnel conducting layer 50 to form an insulating proton implantation region 100 and a conductive non-proton implantation region 200; the energy of proton implantation and the specific implantation concentration are not limited in the present invention.
S4, after removing the proton implantation mask layer, depositing a P-type dielectric film DBR reflector on the surface of the N-type InP heat dissipation layer 60; a resonant cavity is formed between the P-type dielectric film DBR mirror and the N-type DBR mirror layer 20, in the invention, the dielectric film P-type DBR mirror 70 is positioned on the N-type InP conducting layer, and generally comprises 4 periodic SiO2/TiO2 dielectric film materials, and the thickness of each layer is one quarter of the lasing wavelength of the laser divided by the refractive index of the material;
s5, etching an electrode ring with a preset shape on the P-type dielectric film DBR reflector 70; the electrode ring has the function of current injection, the size and the specific shape of the electrode ring are not limited, and the uniform injection of current in all directions is realized by adopting the electrode ring mode, so that the performance of a device is improved;
s6, depositing a P-surface metal heat dissipation electrode layer on the P-type dielectric film DBR reflector 70; the P-side metal heat dissipation electrode layer is arranged for rapidly extracting heat generated by the light emitting units of the laser array in the working process from the inside of the device, so that the working temperature of the device is reduced, the injection of larger current into the device is realized, the power output of the device is improved, and the working reliability of the device is improved;
s7, a light emitting cell is formed by depositing an N-side electrode 90 layer after back side-down polishing of the so-N-type InP substrate, and a laser array is formed from a plurality of the light emitting cells.
By arranging the heat dissipation layer on the epitaxial wafer and depositing the P-side metal heat dissipation electrode layer on the P-type DBR mirror 70, the heat dissipation capability of the light emitting unit and the array is improved, the use reliability and the maximum output power are improved, and the performance of the single light emitting unit and the array performance are improved.
The material structure of the P-side metal heat dissipation electrode layer 80 is not limited, and in one embodiment, the P-side metal heat dissipation electrode layer 80 comprises a titanium adhesion metal layer with the thickness of 100nm-200nm, a platinum barrier metal layer with the thickness of 40 nm-60 nm and a gold electric and heat conduction metal layer with the thickness of 3 μm-5 μm which are sequentially arranged from bottom to top, and the functions of the P-side metal heat dissipation electrode layer are that the adhesion among the surface of a semiconductor material, a dielectric film reflector material, the barrier metal layer and the electric and heat conduction metal layer is increased; the barrier metal layer comprises metal platinum, has a thickness ranging from 40 nanometers to 60 nanometers, contains endpoint values, and is used for blocking metal atoms in the electric conduction and heat conduction metal layer from diffusing into the semiconductor material; the electric and heat conducting metal layer is composed of metal gold, the thickness range of the electric and heat conducting metal layer is 3-5 micrometers, the electric and heat conducting metal layer comprises end values, the electric and heat conducting metal layer serves as a P-type electric conducting electrode, and meanwhile, the high heat conducting coefficient of the gold element is utilized to enable the electric and heat conducting metal layer to serve as an efficient heat radiating structure.
The size of the light-emitting unit is not limited, and the light-emitting unit has a good heat dissipation effect, and the electrode ring is used for current injection, so that the current injection is more uniform, and the light-emitting unit can have a higher power output effect, and the diameter range of the light-emitting unit is 30-70 μm generally.
The insulation structure in the light-emitting unit is not limited in the invention, generally, the light-emitting unit comprises an insulation ring 40 which is concentric with the center of a circle and used for limiting current, the outer diameter of the insulation ring 40 is the same as that of the light-emitting unit, and the difference between the outer diameter of the light-emitting unit and the inner diameter of the insulation ring 40 is 4-6 μm. By arranging the insulating ring 40 and determining the range of the light-emitting unit, current can only be injected into the insulating ring 40, the utilization efficiency of the injected current is improved, under the condition of the same current injection, the output power can be improved, the generation of heat is reduced, and the performance of a device is improved.
The P-type dielectric film DBR reflector is used for forming a resonant cavity, the shape and the size of the resonant cavity are not limited, generally, the P-type dielectric film DBR reflector is a circular P-type dielectric film DBR reflector and is concentric with the light-emitting unit, and the diameter difference between the diameter of the light-emitting unit and the diameter of the circular P-type dielectric film DBR reflector is 8-10 mu m.
Due to the adoption of the electrode ring, the current injection uniformity in all directions of the light-emitting unit is improved, the injection uniformity of the injected current on the whole surface of the light-emitting unit is improved, and the uniform current injection is realized after the diameter of the light-emitting unit exceeds 30 micrometers; the diameter of the inner ring of the second circular ring is 1/2-2/3 of the diameter of the circular P-type dielectric film DBR reflector, and the width of the second circular ring is 1-3 mu m; the diameter of the inner ring of the third ring is equal to the diameter minus 4-6 mu m of the circular P-type dielectric film DBR reflector, and the width of the third ring is 1-3 mu m.
It should be noted that the present invention includes, but is not limited to, the electrode ring structure described above, and those skilled in the art can use two rings or even more rings according to the needs, and the width of each ring can be adjusted appropriately according to different needs, and the present invention is not limited to this.
The adoption of a plurality of ring structures realizes current injection in different areas of the light-emitting unit, reduces the lateral diffusion of current, ensures that the current injection device has better uniformity, greatly reduces the current density at a current injection point, avoids the bearable current density of the light-emitting unit from rapidly reaching the maximum value, and improves the current injection uniformity of the device.
The uniform current injection electrode structure enables the light-emitting unit to still have uniform current injection when the diameter exceeds 30 micrometers, the traditional array electrode structure can only inject current from the edge of the P-type DBR reflector 70, when the diameter of the light-emitting unit exceeds 30 micrometers, the current density at the center of the light-emitting unit is reduced, the output power of an array device is reduced, the current injection of the device is changed from single-line injection injected from the edge of the P-type DBR reflector 70 into surface injection of each circular ring in the electrode ring, the middle of the light-emitting unit can be adopted for current injection, and the performance of the device is improved.
In addition, the embodiment of the invention also provides a high-power long-wavelength vertical cavity surface emitting laser array, which comprises light emitting units manufactured by the high-power long-wavelength vertical cavity surface emitting laser array manufacturing method, wherein the light emitting units form the laser array.
Since the high-power long-wavelength vertical cavity surface emitting laser array comprises the light emitting units manufactured by the method for manufacturing the row-power long-wavelength vertical cavity surface emitting laser array, the same beneficial effects are achieved, and the invention is not repeated herein.
In order to reduce the temperature of the light emitting units at the center of the device and improve the problem of heat accumulation at the center of the device, the specific structure of the array is not limited in the present invention, and in one embodiment, the column power long wavelength vertical cavity surface emitting laser array comprises a circular central light emitting group at the center and 6 to 8 fan-shaped laser areas arranged around the circular central light emitting group, and the number of the light emitting units in the fan-shaped laser areas increases with the distance from the circular central light emitting group.
The invention does not limit the space between the circular central light-emitting group and the sector laser areas arranged in a surrounding way, and does not limit the space between the adjacent sector laser areas.
It should be noted that the present invention is not limited to the above structure, and those skilled in the art may also use a small fan-shaped region in the fan-shaped laser region to reduce the density of the light emitting units, or use other structures, which is not limited by the present invention.
The number, arrangement and the like of the light emitting units of the central light emitting group are not limited, generally, the circular central light emitting group comprises 6-8 light emitting units, and the diameter of the circular central light emitting group is 200-250 micrometers.
The invention does not limit the sector laser areas and the intervals between the sector laser areas, generally the interval between the adjacent sector laser areas is 20-40 mu m, and the sector laser areas are divided into 7-9 layers according to the distance from the center of the array and are equidistant between the adjacent layers.
In one embodiment, the light emitting units are arranged in 8 fan-shaped laser regions distributed annularly, the central angle of each fan-shaped structure is 45 degrees, the fan-shaped structure comprises 9 layers of light emitting units, the first layer comprises one light emitting unit, the second layer comprises two light emitting units, and so on, and the ninth layer comprises nine light emitting units. In each layer, the luminous unit layers are arranged in an arc shape, and the distance range of adjacent luminous units is 30 micrometers; the array center contains 8 light emitting units arranged in a circle with a diameter in the range of 200 microns, and the array center contains one light emitting unit.
By adopting the structural array arrangement mode, the density of the central light-emitting unit of the device is reduced, and the arrangement of a large-area heat dissipation layer in the light-emitting unit is combined, so that the problem of serious heat accumulation in the center of the device caused by the traditional array arrangement mode is solved, the heat dissipation capacity of the array device is further improved, the upper limit of the injection current and the maximum output power of the device are improved, and the performance of the device is improved.
In summary, in the method for manufacturing the high-power long-wavelength vertical cavity surface emitting laser array according to the embodiment of the present invention, the heat dissipation layer is disposed on the epitaxial wafer, and the P-side metal heat dissipation electrode layer is deposited on the P-type DBR mirror, so that the heat dissipation capability of the light emitting unit and the array is improved, the use reliability and the maximum output power are improved, and the performance of the single light emitting unit and the performance of the array are improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (5)
1. A method for manufacturing a high-power long-wavelength vertical cavity surface emitting laser array is characterized by comprising the following steps:
s1, depositing and growing an N-type DBR reflector layer, a quantum well active layer, a tunneling conduction layer and an N-type InP heat dissipation layer on the N-type InP substrate layer in sequence to form an epitaxial wafer;
s2, depositing a proton implantation mask layer on the front surface of the epitaxial wafer, and exposing and developing the proton implantation mask layer to obtain a desired array pattern structure;
s3, performing proton implantation on the epitaxial wafer and enabling the proton to reach the lower surface of the tunneling conducting layer to form an insulated proton implantation area and a conductive non-proton implantation area;
s4, after removing the proton implantation mask layer, depositing a P-type dielectric film DBR reflector on the surface of the N-type InP heat dissipation layer;
s5, etching an electrode ring with a preset shape on the P-type dielectric film DBR reflector;
s6, depositing a P-surface metal heat dissipation electrode layer on the P-type dielectric film DBR reflector;
s7, performing back thinning and polishing on the N-type InP substrate layer, depositing an N-side electrode layer to form a light-emitting unit, and forming a laser array by using a plurality of light-emitting units;
the P-side metal heat dissipation electrode layer comprises a titanium adhesion metal layer with the thickness of 100nm-200nm, a platinum barrier metal layer with the thickness of 40 nm-60 nm and a gold electric conduction metal layer with the thickness of 3 mu m-5 mu m which are sequentially arranged from bottom to top;
the diameter range of the light-emitting unit is 30-70 mu m;
the light-emitting unit comprises an insulating ring which is concentric in circle center and used for limiting current, the outer diameter of the insulating ring is the same as that of the light-emitting unit, and the difference value between the outer diameter of the light-emitting unit and the inner diameter of the insulating ring is 4-6 mu m;
the P-type dielectric film DBR reflector is a circular P-type dielectric film DBR reflector and is concentric with the light-emitting unit, and the diameter difference between the diameter of the light-emitting unit and the diameter of the circular P-type dielectric film DBR reflector is 8-10 mu m;
the electrode ring comprises a first circular ring, a second circular ring and a third circular ring which are concentric with the light-emitting unit from inside to outside, the diameter of the inner ring of the first circular ring is 1/4-1/3 of the diameter of the circular P-type dielectric film DBR reflector, and the width of the first circular ring is 1-3 mu m; the diameter of the inner ring of the second circular ring is 1/2-2/3 of the diameter of the circular P-type dielectric film DBR reflector, and the width of the second circular ring is 1-3 mu m; the diameter of the inner ring of the third ring is equal to the diameter minus 4-6 mu m of the circular P-type dielectric film DBR reflector, and the width of the third ring is 1-3 mu m.
2. A high power long wavelength vertical cavity surface emitting laser array comprising light emitting cells fabricated by the method of claim 1, wherein a plurality of said light emitting cells form a laser array.
3. A high power long wavelength vertical cavity surface emitting laser array according to claim 2, comprising a centrally located circular central light emitting group and 6-8 fan shaped laser regions disposed around said circular central light emitting group, the number of light emitting units of said fan shaped laser regions increasing with increasing distance from said circular central light emitting group.
4. The high power long wavelength vertical cavity surface emitting laser array of claim 3, wherein said circular central light emitting group comprises 6-8 light emitting cells, and the diameter of said circular central light emitting group is 200 μm-250 μm.
5. The high power long wavelength vertical cavity surface emitting laser array of claim 4, wherein a pitch of adjacent said fan-shaped laser regions is 20 μm to 40 μm, said fan-shaped laser regions being divided into 7 to 9 layers by a distance from a center of said array and equidistant between adjacent layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010112797.XA CN111293583B (en) | 2020-02-24 | 2020-02-24 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010112797.XA CN111293583B (en) | 2020-02-24 | 2020-02-24 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111293583A CN111293583A (en) | 2020-06-16 |
| CN111293583B true CN111293583B (en) | 2021-06-01 |
Family
ID=71025383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010112797.XA Active CN111293583B (en) | 2020-02-24 | 2020-02-24 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111293583B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022208A (en) * | 2006-02-15 | 2007-08-22 | 中国科学院半导体研究所 | Structure of longwave long vertical cavity face emission laser and producing method |
| CN101179177A (en) * | 2006-11-09 | 2008-05-14 | 中国科学院半导体研究所 | Structure of long wavelength vertical cavity surface-emitting laser and manufacturing method |
| CN101685942A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院上海微系统与信息技术研究所 | Vertical-cavity surface-emitting laser with InAsP/InGaAsP quantum well as an active layer and method |
| CN104577711A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4130163B2 (en) * | 2003-09-29 | 2008-08-06 | 三洋電機株式会社 | Semiconductor light emitting device |
-
2020
- 2020-02-24 CN CN202010112797.XA patent/CN111293583B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022208A (en) * | 2006-02-15 | 2007-08-22 | 中国科学院半导体研究所 | Structure of longwave long vertical cavity face emission laser and producing method |
| CN101179177A (en) * | 2006-11-09 | 2008-05-14 | 中国科学院半导体研究所 | Structure of long wavelength vertical cavity surface-emitting laser and manufacturing method |
| CN101685942A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院上海微系统与信息技术研究所 | Vertical-cavity surface-emitting laser with InAsP/InGaAsP quantum well as an active layer and method |
| CN104577711A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111293583A (en) | 2020-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0858137B1 (en) | Surface emitting laser device and its method of manufacture | |
| US7221691B2 (en) | Versatile method and system for single mode VCSELs | |
| US5637511A (en) | Vertical-to-surface transmission electro-photonic device and method for fabricating the same | |
| CN110416874B (en) | Method for preparing small-spacing vertical cavity surface emitting laser array | |
| EP0898347A1 (en) | Vertical-cavity surface-emitting lasers with intra-cavity structures | |
| CN102187534B (en) | Vertical cavity surface emitting laser with improved mode-selectivity | |
| US6621843B2 (en) | Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same | |
| CN113795985B (en) | Vertical cavity surface emitting laser and electronic device | |
| JP2022526723A (en) | Vertical resonator type surface emitting laser element | |
| CN1017114B (en) | Current injection laser | |
| JP4497859B2 (en) | Surface emitting semiconductor laser device, optical transmission module, and optical transmission system | |
| TW200803091A (en) | Diode laser device | |
| CN111799654B (en) | Laser device and manufacturing method and application thereof | |
| CN111293583B (en) | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof | |
| CN210326477U (en) | Long wavelength vertical cavity surface emitting laser | |
| US5703898A (en) | Surface emission laser and method of manufacturing the same | |
| KR100484490B1 (en) | Long-wavelength vertical cavity surface emitting laser and fabricating method the same | |
| CN114552380A (en) | Resonant cavity, laser unit, chip, laser, forming method and laser radar | |
| CN110932092A (en) | Long wavelength vertical cavity surface emitting laser and preparation method thereof | |
| CN114465090B (en) | Multi-junction distributed feedback laser and preparation method thereof | |
| CN217563042U (en) | Surface emitting laser | |
| CN219286879U (en) | Stable wavelength edge-emitting laser for laser radar | |
| CN115693399A (en) | Semiconductor laser device, manufacturing method and application thereof | |
| CN117810808A (en) | VCSEL laser, preparation method and laser radar | |
| JP2004260125A (en) | Surface emission laser and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |