CN101179177A - Structure of long wavelength vertical cavity surface-emitting laser and manufacturing method - Google Patents
Structure of long wavelength vertical cavity surface-emitting laser and manufacturing method Download PDFInfo
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- CN101179177A CN101179177A CNA2006101144068A CN200610114406A CN101179177A CN 101179177 A CN101179177 A CN 101179177A CN A2006101144068 A CNA2006101144068 A CN A2006101144068A CN 200610114406 A CN200610114406 A CN 200610114406A CN 101179177 A CN101179177 A CN 101179177A
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Abstract
The invention provides a structure for an emitting laser with a long wave and a long vertical cavity, which includes a N-shaped GaAs underlay and a lower bragg reflector with a plurality of periods arranged on the underlay; an active region is linked with the lower bragg reflector with the plurality of periods; an upper bragg reflector with a plurality of periods is arranged at the middle of the active region; an SiO<SUB>2</SUB> mask is settled on the lower bragg reflector with the plurality of period, as well as the tops and side walls of the active region and the upper bragg reflector; a P electrode is arranged on the SiO<SUB>2</SUB> mask and the exposed surface on the active region; a N electrode is arranged under the underlay.
Description
Technical field
The present invention is a kind of structure and manufacture method of long-wavelength vertical cavity surface emitting laser, has adopted the combination of GaAs/AlGaAs material system as lower Bragg reflector, and has passed through the bonding mode with lower Bragg reflector and active area adhesion.The invention still further relates to technology and the method for making this structure.
Background technology
Vertical cavity surface emitting laser becomes the focus of optoelectronic areas research because of itself low threshold value, circular light beam, easily coupling and advantage such as easily two dimension is integrated.In Fiber Optical Communication System, dynamically the long wavelength vertical cavity surface of single mode operation emission LASER Light Source is indispensable key element.Be mainly used in middle distance and long distance High-speed data communication and light interconnection, light parallel processing, light recognition system, important use is all arranged in metropolitan area network and wide area network.
1.3 μ m and 1.55 mum wavelengths are in the low chromatic dispersion and the low decay window of optical fiber, make 1.3 μ m and 1.55 μ m VCSEL have the incomparable advantage of short wavelength VCSEL aspect the optical fiber communication of middle and long distance superelevation degree of parallelism, add this two existing communication standards of wave band and mature technology, make long wavelength VCSEL application prospect in parallel optical transmission, optical communication and wavelength division multiplexing (WDM) system very wide, have potentiality before the market.At 1.3 μ m and 1.55 mum wavelength near zones, can provide the material of high-gain mainly to be based on the material of InP substrate, the InGaAsP QW of InP base and AlGaInAs QW are that the big difficult point of VCSEL is exactly the Bragg mirror material with the active layer material lattice match, the refringence of materials such as InGaAsP/InP, AlGaInAs/InP, InAlGaAs/InAlAs is smaller, therefore, make DBR reach reflectivity more than 99%, just need more periodicity, thereby increased epitaxially grown difficulty.And thicker DBR also can bring bigger series resistance, more serious thermal effect and bigger optical loss.On the other hand, the thermal conductivity of quaternary alloy material is low, makes the thermal resistance of device be difficult to reduce, and these factors are compared significantly slowly the progress of InP base long wavelength VCSEL with short wavelength VCSEL.And the Bragg mirror that GaAs/AlGaAs material system forms is bigger because of its refringence, so can just can reach very high reflectivity by the less relatively cycle, it is many to have improved traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector number of plies, thermal resistance is big, be difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
Summary of the invention
The object of the present invention is to provide a kind of structure and manufacture method of long-wavelength vertical cavity surface emitting laser, it is many to have improved traditional long-wavelength vertical cavity surface emitting laser distribution Bragg reflector number of plies, thermal resistance is big, is difficult to reach high reflectance, the shortcoming of epitaxial growth difficulty.
The structure of a kind of long-wavelength vertical cavity surface emitting laser of the present invention is characterized in that, this structure comprises:
One substrate, this substrate are N type GaAs substrate;
The lower Bragg reflector in a plurality of cycles, the lower Bragg reflector in these a plurality of cycles is produced on the substrate, and the light that the lower Bragg reflector in these a plurality of cycles is used in the reflector laser chamber forms laser generation;
One active area, this active area connects by the bonding mode and the lower Bragg reflector in a plurality of cycles, is used for forming the gain of light;
The last Bragg mirror in a plurality of cycles, the last Bragg mirror in these a plurality of cycles is produced on the centre position on the active area, forms light window simultaneously, and the light that is used in the reflector laser chamber forms laser generation;
One SiO
2Mask, the part top and the sidewall that are deposited on the part top of top, active area of lower Bragg reflector in a plurality of cycles and sidewall and go up Bragg mirror play the effect that forms light window and prevent short circuit;
One P electrode, this P electrode is produced on the SiO of active area
2With the surfaces of active regions that exposes, form the inner chamber contact on the mask, be used for electric current and inject;
One N electrode, this N electrode be produced on substrate below.
Wherein the lower Bragg reflector in a plurality of cycles comprises the Al in 32 cycles
0.9Ga
0.1The Al of As layer and GaAs layer and one-period
0.9Ga
0.1As layer, Al
0.98Ga
0.002As layer and GaAs layer; Al wherein
0.98Ga
0.02The As layer is used for oxidation, forms the oxidation hole, to form insulating regions with the flow restriction effect that electrifies.
Wherein the aperture in oxidation hole is about 10～20 microns.
Wherein go up Si deielectric-coating and SiO that Bragg mirror comprises 3.5 cycles
2Deielectric-coating.
The manufacture method of a kind of long-wavelength vertical cavity surface emitting laser structure of the present invention is characterized in that this method comprises the steps:
(1) adopt the epitaxy technique mocvd method at the grow lower Bragg reflector in a plurality of cycles of substrate;
(2) adopt molecular beam epitaxy accretion method at InP substrate growth active area;
(3) active area and Bragg mirror are adopted the bonding techniques adhesion, bonded interface is InP/GaAs, adopts the method for chemical corrosion to remove the InP substrate then;
(4) form mask by standard photolithography process, Bragg mirror on band photoresist electron beam cyclotron resonance deposit or the electron beam evaporation;
(5) form mask by standard photolithography process, form table top, expose the Al of lower Bragg reflector by chemical corrosion active area and lower Bragg reflector
0.98Ga
0.02As layer and GaAs layer;
(6) make Al by oxidation technology
0.98Ga
0.02The oxidation of As layer segment forms oxidation hole and insulating regions to play the electric current restriction;
(7) heat deposition SiO
2Mask by standard photoetching, corrosion, exposes light-emitting window, forms mask at last Bragg mirror and active area sidewall simultaneously, to prevent short circuit current;
(8) evaporation P electrode forms mask by standard photolithography process again, and corrosion forms the P electrode shape then, carries out Alloying Treatment then;
(9) attenuate, polishing N type InP substrate, evaporation N electrode carries out Alloying Treatment then, finishes the making of device.
Wherein lower Bragg reflector comprises the Al in 32 cycles
0.9Ga
0.1The Al of As layer and GaAs layer and one-period
0.9Ga
0.1As layer, Al
0.98Ga
0.02As layer and GaAs layer.
Wherein the optical thickness of active area is 1.5 λ, and λ is an excitation wavelength.
Wherein going up Bragg mirror is to form by band glue stripping technology, comprises the deielectric-coating Si layer and the SiO in 3.5 cycles of deposit successively or evaporation
2Layer.
Wherein the aperture in this oxidation hole is 10～20 microns.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with example and accompanying drawing, describe in detail as after, wherein:
Fig. 1 is the schematic diagram of long wavelength's surface-emitting laser of the present invention;
Fig. 2 is the optical photograph behind the InP substrate etching;
After Fig. 3 is lower Bragg reflector 3 of the present invention and active area 4 bondings, the scanning electron microscope diagram of Bragg mirror 5 on the electron beam evaporation;
Fig. 4 is the light microscope figure that goes up after Bragg mirror 5 band glue are peeled off;
Optical photograph behind Fig. 5 active area 4 and lower Bragg reflector 3 wet etchings;
Fig. 6 is Al
0.98Ga
0.02Light microscope figure behind As layer 33 partial oxidation.
Embodiment
The present invention utilizes Si layer 51 and the SiO of GaAs/AlGaAs material system as 4,3.5 cycles of lower Bragg reflector
2Layer 52 deielectric-coating are realized the structure of long wavelength's surface-emitting laser as last Bragg mirror 5.Fig. 1 is long wavelength's surface-emitting laser schematic diagram of the present invention.Comprise N electrode 1, N type GaAs substrate 2, lower Bragg reflector 3 comprises the Al in 32 cycles
0.98Ga
0.1The Al of As layer 31 and GaAs layer 32 and one-period
0.9Ga
0.1As layer 31, Al
0.98Ga
0.02As layer 33 and GaAs layer 32, strained quantum well active area 4, last Bragg mirror 5 is by 3.5 cycle Si/SiO
2Multilayer dielectric film 51 and 52 is formed, and also is light-emitting window simultaneously, SiO
2Mask 6, P electrode 7.The principal character of this structure is as follows:
1. wherein lower Bragg reflector 3 comprises the Al in 32 cycles
0.9Ga
0.1The Al of As layer 31 and GaAs layer 32 and one-period
0.9Ga
0.1As layer 31, Al
0.98Ga
0.02As layer 33 and GaAs layer 32.Al wherein
0.98Ga
0.02As layer 33 is used for oxidation with the flow restriction effect that electrifies, and oxide-aperture is about about 10～20 microns.
2. wherein go up Bragg mirror 5 and comprise 3.5 cycle Si/SiO
2Multilayer dielectric film 51 and 52;
3. lower Bragg reflector 3 adopts different extensional mode growths at different substrates respectively with active area 4, is sticked together by bonding method then;
4. the optical thickness of active area design is 1.5 λ, and λ is an excitation wavelength;
5. the P electrode 7 of this structure is produced on the active area 4, and N electrode 1 is produced on the substrate 2, is typical inner chamber contact vertical cavity surface emitting laser.
When epitaxial growth, adopt two kinds of growth patterns on two kinds of substrates, to carry out the epitaxial growth of lower Bragg reflector 3 and active area 4 respectively.Wherein adopt the molecular beam epitaxy accretion method lower Bragg reflector 3 of growing on GaAs substrate 2, the epitaxy technique mocvd method is at InP substrate growth active area 4.
Form mask by standard photolithography process, be with Bragg mirror 5 on photoresist electron beam cyclotron resonance deposit or the electron beam evaporation, comprise the deielectric-coating Si layer 51 and the SiO in 3.5 cycles of deposit successively or evaporation
2Layer 52, Fig. 3 is the transmission electron microscope photo behind the Bragg mirror 5 on the electron beam evaporation.Be with glue to peel off then and form upward Bragg mirror 5, band glue is peeled off the pattern of formation and is seen Fig. 4;
Form mask by standard photolithography process, form table top, expose the Al of lower Bragg reflector 3 by chemical corrosion active area 4 and lower Bragg reflector 3
0.98Ga
0.02As layer 33 and GaAs layer 32, the optical photograph of active area 4 and lower Bragg reflector 3 corrosion is seen Fig. 5;
Make Al by oxidation technology
0.9Ga
0.02As layer 33 partial oxidation are to play the electric current restriction, and oxide-aperture 35 is controlled at about 10～20 microns; For thickness is the Al of 50nm
0.98Ga
0.02As layer 33 is 420 ℃ in temperature, and water temperature remains on 88 ℃, and under the condition of nitrogen flow 1L/min, oxidation rate is about 1 micron/minute.Fig. 6 is Al
0.98Ga
0.02Optical microscope image behind As layer 33 partial oxidation.
Heat deposition SiO
2Mask 6 by standard photoetching, corrosion, exposes light-emitting window, forms mask at last Bragg mirror 5 and active area 4 sidewalls simultaneously, to prevent short circuit current;
Last Bragg mirror 5 prepares by following steps, at first adopt standard photolithography process to form mask, be with photoresist low temperature to carry out Bragg mirror 5 on electron beam cyclotron resonance deposit or the electron beam evaporation then, comprise the deielectric-coating Si layer 51 and the SiO in 3.5 cycles of deposit successively or evaporation
2Layer 52 is with glue to peel off then and is formed upward Bragg mirror 5.Fig. 3 is integrally-built scanning electron microscope image, and Fig. 4 is for being with last Bragg mirror 5 optical microscope image after glue is peeled off.
Attenuate, polishing N type InP substrate 2 evaporate N electrode 1 then, carry out Alloying Treatment at last.
Claims (9)
1. the structure of a long-wavelength vertical cavity surface emitting laser is characterized in that, this structure comprises:
One substrate, this substrate are N type GaAs substrate;
The lower Bragg reflector in a plurality of cycles, the lower Bragg reflector in these a plurality of cycles is produced on the substrate, and the light that the lower Bragg reflector in these a plurality of cycles is used in the reflector laser chamber forms laser generation;
One active area, this active area connects by the bonding mode and the lower Bragg reflector in a plurality of cycles, is used for forming the gain of light;
The last Bragg mirror in a plurality of cycles, the last Bragg mirror in these a plurality of cycles is produced on the centre position on the active area, forms light window simultaneously, and the light that is used in the reflector laser chamber forms laser generation;
-SiO
2Mask, the part top and the sidewall that are deposited on the part top of top, active area of lower Bragg reflector in a plurality of cycles and sidewall and go up Bragg mirror play the effect that forms light window and prevent short circuit;
One P electrode, this P electrode is produced on the SiO of active area
2With the surfaces of active regions that exposes, form the inner chamber contact on the mask, be used for electric current and inject;
One N electrode, this N electrode be produced on substrate below.
2. the structure of novel long-wavelength vertical cavity surface emitting laser according to claim 1 is characterized in that, wherein the lower Bragg reflector in a plurality of cycles comprises the Al in 32 cycles
0.9Ga
0.1The Al of As layer and GaAs layer and one-period
0.9Ga
0.1As layer, Al
0.98Ga
0.02As layer and GaAs layer; Al wherein
0.98Ga
0.02The As layer is used for oxidation, forms the oxidation hole, to form insulating regions with the flow restriction effect that electrifies.
3. the structure of novel long-wavelength vertical cavity surface emitting laser according to claim 2 is characterized in that, wherein the aperture in oxidation hole is about 10～20 microns.
4. the structure of novel long-wavelength vertical cavity surface emitting laser according to claim 1 is characterized in that, wherein goes up Si deielectric-coating and SiO that Bragg mirror comprises 3.5 cycles
2Deielectric-coating.
5. the manufacture method of a long-wavelength vertical cavity surface emitting laser structure is characterized in that, this method comprises the steps:
(1) adopt the epitaxy technique mocvd method at the grow lower Bragg reflector in a plurality of cycles of substrate;
(2) adopt molecular beam epitaxy accretion method at InP substrate growth active area;
(3) active area and Bragg mirror are adopted the bonding techniques adhesion, bonded interface is InP/GaAs, adopts the method for chemical corrosion to remove the InP substrate then;
(4) form mask by standard photolithography process, Bragg mirror on band photoresist electron beam cyclotron resonance deposit or the electron beam evaporation;
(5) form mask by standard photolithography process, form table top, expose the Al of lower Bragg reflector by chemical corrosion active area and lower Bragg reflector
0.98Ga
O.02As layer and GaAs layer;
(6) make Al by oxidation technology
0.98Ga
0.02The oxidation of As layer segment forms oxidation hole and insulating regions to play the electric current restriction;
(7) heat deposition SiO
2Mask by standard photoetching, corrosion, exposes light-emitting window, forms mask at last Bragg mirror and active area sidewall simultaneously, to prevent short circuit current;
(8) evaporation P electrode forms mask by standard photolithography process again, and corrosion forms the P electrode shape then, carries out Alloying Treatment then;
(9) attenuate, polishing N type InP substrate, evaporation N electrode carries out Alloying Treatment then, finishes the making of device.
6. the manufacture method of novel long-wavelength vertical cavity surface emitting laser according to claim 5 is characterized in that, wherein lower Bragg reflector comprises the Al in 32 cycles
0.9Ga
0.1The Al of As layer and GaAs layer and one-period
0.9Ga
0.1As layer, Al
0.98Ga
0.02As layer and GaAs layer.
7. the manufacture method of novel long-wavelength vertical cavity surface emitting laser according to claim 5 is characterized in that, wherein the optical thickness of active area is 1.5 λ, and λ is an excitation wavelength.
8. the manufacture method of novel long-wavelength vertical cavity surface emitting laser according to claim 5 is characterized in that, wherein going up Bragg mirror is to form by band glue stripping technology, comprises the deielectric-coating Si layer and the SiO in 3.5 cycles of deposit successively or evaporation
2Layer.
9. the manufacture method of novel long-wavelength vertical cavity surface emitting laser according to claim 5 is characterized in that, wherein the aperture in this oxidation hole is 10～20 microns.
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| CN100495839C CN100495839C (en) | 2009-06-03 |
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| CN102013633A (en) * | 2010-10-29 | 2011-04-13 | 北京工业大学 | Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6668005B2 (en) * | 1998-01-31 | 2003-12-23 | Klaus Streubel | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
| US7072376B2 (en) * | 2004-09-16 | 2006-07-04 | Corning Incorporated | Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom |
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2006
- 2006-11-09 CN CNB2006101144068A patent/CN100495839C/en not_active Expired - Fee Related
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| CN101667715B (en) * | 2008-09-03 | 2010-10-27 | 中国科学院半导体研究所 | Single-mode high-power vertical cavity surface emitting laser and manufacturing method thereof |
| CN101714605B (en) * | 2009-11-25 | 2012-12-12 | 山东华光光电子有限公司 | AlGaInp system LED chip with current regulating layer and preparing method thereof |
| CN102013633A (en) * | 2010-10-29 | 2011-04-13 | 北京工业大学 | Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof |
| CN103904175A (en) * | 2014-04-18 | 2014-07-02 | 中国科学院半导体研究所 | Method for manufacturing photonic crystal light-emitting diode of waveguiding structures |
| CN103904175B (en) * | 2014-04-18 | 2016-07-06 | 中国科学院半导体研究所 | There is the manufacture method of waveguiding structure photonic crystal light-emitting diode |
| CN107749565B (en) * | 2017-11-27 | 2020-12-04 | 江苏点晶光电科技有限公司 | Si-based vertical cavity surface emitting chip |
| CN107749565A (en) * | 2017-11-27 | 2018-03-02 | 江苏点晶光电科技有限公司 | Si based vertical cavity surface launching chips |
| CN108777433A (en) * | 2018-03-23 | 2018-11-09 | 江苏宜兴德融科技有限公司 | Vertical plane cavity surface emitting laser and preparation method thereof |
| CN110635352A (en) * | 2019-09-29 | 2019-12-31 | 河北工业大学 | VCSEL device with N-type semiconductor limiting hole structure |
| CN111293583A (en) * | 2020-02-24 | 2020-06-16 | 长春中科长光时空光电技术有限公司 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
| CN111293583B (en) * | 2020-02-24 | 2021-06-01 | 长春中科长光时空光电技术有限公司 | High-power long-wavelength vertical-cavity surface-emitting laser array and manufacturing method thereof |
| CN112133643A (en) * | 2020-08-18 | 2020-12-25 | 华芯半导体研究院(北京)有限公司 | Novel Vcsel epitaxial structure and method for testing corresponding oxidation aperture thereof |
| CN112133643B (en) * | 2020-08-18 | 2021-09-07 | 华芯半导体研究院(北京)有限公司 | Novel Vcsel epitaxial structure and method for testing corresponding oxidation aperture thereof |
| CN114188820A (en) * | 2022-02-14 | 2022-03-15 | 常州承芯半导体有限公司 | Method for forming vertical cavity surface emitting laser |
| CN118156972A (en) * | 2024-05-13 | 2024-06-07 | 山东省科学院激光研究所 | Long wavelength vertical cavity surface emitting laser and preparation method thereof |
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