CN112133643A - Novel Vcsel epitaxial structure and method for testing corresponding oxidation aperture thereof - Google Patents

Novel Vcsel epitaxial structure and method for testing corresponding oxidation aperture thereof Download PDF

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CN112133643A
CN112133643A CN202010868764.8A CN202010868764A CN112133643A CN 112133643 A CN112133643 A CN 112133643A CN 202010868764 A CN202010868764 A CN 202010868764A CN 112133643 A CN112133643 A CN 112133643A
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oxidation
epitaxial structure
white light
light reflection
surface emitting
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CN112133643B (en
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尧舜
杨默
戴伟
张颜儒
王青
李军
张杨
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China Semiconductor Technology Co ltd
Huaxin Semiconductor Research Institute Beijing Co ltd
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China Semiconductor Technology Co ltd
Huaxin Semiconductor Research Institute Beijing Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention discloses a method for testing the oxidation aperture of a vertical cavity surface emitting laser, which comprises the steps of obtaining the transmission coefficient and the reflection coefficient of the whole multilayer medium by simulating/calculating data through a transmission matrix method so as to obtain a simulated epitaxial structure, obtaining a white light reflection map of a grown epitaxial layer through a reflection spectrum tester after epitaxial growth, further adjusting to obtain a comparison simulation/calculation map before and after oxidation, then arranging an optical filter or/and a monochromatic laser below an observation platform according to the wavelength corresponding to a wave band with a larger reflectivity difference value, and judging whether the oxidation aperture reaches the required size efficiently, quickly and accurately according to whether different-brightness imaging occurs at an oxidation mark position pre-made on the observation platform. Increasing lambda in N-side or P-side Bragg mirrors22 optical thickness to increase whitenessThe reflectance of the light reflection spectrum is poor, so that the image of the lightness and darkness is more visually observed, thereby judging the size of the oxide aperture.

Description

Novel Vcsel epitaxial structure and method for testing corresponding oxidation aperture thereof
Technical Field
The invention belongs to the fields of photoelectrons, microelectronics and power devices, and particularly relates to a method for testing the oxide aperture of a vertical cavity surface emitting laser.
Background
The oxidation process of a Vertical Cavity Surface Emitting Laser (VCSEL) is one of important links in the chip manufacturing process, but the measurement mode of the oxidation aperture is greatly restricted, the diameter of the common oxidation aperture is only less than 10um, the time of the oxidation process is short, and the process is slightly poorly controlled, which can cause the failure of the whole process flow and scrap. Therefore, it is important to provide a method for rapidly and instantly observing the oxide aperture for the whole oxidation process and even the chip process.
The measurement and observation of the oxidation aperture have great restriction at present, the oxidation depth is judged mainly by monitoring the oxidation mark at present, so as to calculate the size of the oxidation aperture, and the method has certain error and delay, so that the wafer is scrapped due to the fact that the oxidation aperture is too large or too small.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a method for testing an oxide aperture of a vertical cavity surface emitting laser, in which a white light reflectance spectrum is obtained by a transmission matrix method, the reflectance of the white light reflectance spectrum changes in a specific waveband through an oxidation process, and the size of the oxide aperture is rapidly and instantly determined according to a brightness difference reflected by a reflectance difference of the white light reflectance spectrum before and after oxidation in the specific waveband.
The invention provides a method for testing the oxide aperture of a vertical cavity surface emitting laser. According to an embodiment of the invention, the method comprises:
(1) respectively simulating the vertical cavity surface emitting lasers before and after oxidation by adopting a transmission matrix method so as to obtain a simulated epitaxial structure of the vertical cavity surface emitting lasers before and after oxidation and a first white light reflection contrast map corresponding to the simulated epitaxial structure;
(2) carrying out epitaxial growth according to the simulated epitaxial structure before oxidation so as to obtain an actual epitaxial structure before oxidation;
(3) testing the reflectivity corresponding to different wavelengths of the actual epitaxial structure before oxidation by using a reflection spectrum testing machine so as to obtain a second white light reflection spectrum corresponding to the actual epitaxial structure before oxidation;
(4) adjusting the first white light reflection contrast map according to the second white light reflection map so as to obtain a third white light reflection contrast map;
(5) selecting any point corresponding to the same wavelength and having a reflectivity difference value of not less than 15% before and after oxidation on the third white light reflection contrast map so as to obtain the corresponding wavelength lambda1；
(6) Arranged below the observation platform (lambda)1-5)～(λ1+5) filtering corresponding to any wavelength in the rangeAnd the optical sheet or/and the monochromatic laser judges whether the oxidation aperture reaches the required size according to whether images with different shades appear at the oxidation mark position which is made in advance on the observation platform.
According to the method for testing the oxidation aperture of the vertical cavity surface emitting laser, the transmission coefficient and the reflection coefficient of the whole multilayer medium are obtained through data simulation/calculation by a transmission matrix method, so that a simulated epitaxial structure is obtained, a white light reflection map of a grown epitaxial layer is obtained through a reflection map testing machine after epitaxial growth is carried out, then a comparison simulation/calculation map before and after oxidation is obtained through adjustment, then an optical filter or/and a monochromatic laser are arranged below an observation platform according to the wavelength corresponding to the wave band with a large reflectivity difference value, and whether imaging with different brightness degrees occurs at the oxidation mark position pre-made on the observation platform is judged efficiently, quickly and accurately, so that whether the oxidation aperture reaches the required size is judged. The method has the advantages of low cost, quick response, high accuracy and the like, the rejection rate is further reduced in the mass production stage, and the working efficiency is improved.
In addition, the method for testing the oxide aperture of the vertical cavity surface emitting laser according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the invention, the actual epitaxial structure comprises: a substrate; the device comprises a buffer layer, an N-side Bragg reflector, a bottom cavity, a quantum well, a top cavity, an oxidation layer, a P-side Bragg reflector and a surface layer which are sequentially grown on a substrate.
In some embodiments of the invention, the step (2) further comprises: increasing λ in AlGaAs of either layer of the N-side Bragg mirror or the P-side Bragg mirror2/2 an integer multiple of the optical thickness, where λ2Indicating the emission wavelength of the vertical cavity surface emitting laser. Thereby increasing lambda by N-side or P-side bragg mirrors2And/2, the integral multiple of the optical thickness is used for improving the reflectivity difference of the white light reflection spectrum, so that the imaging of the brightness is more intuitively observed, and the size of the oxidation aperture is judged.
In some embodiments of the invention, the N-side is a bradIncreasing lambda in AlGaAs of any layer of lattice mirror or P-side Bragg mirror2An optical thickness of/2, wherein2Indicating the emission wavelength of the vertical cavity surface emitting laser. Thereby increasing lambda by N-side or P-side bragg mirrors2The optical thickness of/2 is used to improve the reflectance difference of the white light reflectance spectrum, so that the imaging of the brightness and darkness is more intuitively observed, and the size of the oxidation aperture is judged.
In some embodiments of the invention, said λ1730nm or 750nm is chosen.
In some embodiments of the invention, the difference in reflectivity is selected to be 15% or 18%.
In some embodiments of the present invention, in step (6), an oxidation mark of 8um is made on the observation stand in advance.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flowchart of a method for testing oxide aperture of a VCSEL in accordance with an embodiment of the present invention.
Fig. 2 is a schematic view of an epitaxial structure before oxidation according to an embodiment of the present invention.
Fig. 3 is a schematic view of an oxidized epitaxial structure according to an embodiment of the present invention.
Fig. 4 is a white light reflectance spectrum corresponding to the pre-oxidation pseudo-epitaxial structure in example 1.
FIG. 5 is a third white light reflectance contrast spectrum of example 1.
FIG. 6 is a reflectance spectrum of the 730nm and 750nm filters in example 1.
Fig. 7 is a top view of the oxide aperture on the observation stand in example 1.
FIG. 8 is a third white light reflectance contrast spectrum of example 3.
Fig. 9 is a graph of standing optical thickness waves for the epitaxial structure of example 3.
FIG. 10 shows the AlGaAs layer addition λ of the P-side Bragg reflector of example 32Optical thickness standing wave pattern at/2 wavelength.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In one aspect of the invention, a method of testing an oxide aperture of a vertical cavity surface emitting laser is presented. According to an embodiment of the invention, with reference to fig. 1, the method comprises:
s100: respectively simulating the vertical cavity surface emitting lasers before and after oxidation by adopting a transmission matrix method so as to obtain a simulated epitaxial structure of the vertical cavity surface emitting lasers before and after oxidation and a first white light reflection contrast map corresponding to the simulated epitaxial structure;
in the step, a transmission matrix method is adopted to firstly simulate the vertical cavity surface emitting laser before oxidation to obtain a simulated epitaxial structure of the vertical cavity surface emitting laser before oxidation and a white light reflection map corresponding to the simulated epitaxial structure, then simulate the vertical cavity surface emitting laser after oxidation to obtain a simulated epitaxial structure of the vertical cavity surface emitting laser after oxidation and a white light reflection map corresponding to the simulated epitaxial structure, and the white light reflection map before oxidation and the white light reflection map after oxidation are integrated to obtain a comparison simulation/calculation map before and after oxidation process, namely a first white light reflection comparison map. According to an embodiment of the present invention, referring to fig. 2, the epitaxial structure before oxidation includes a substrate 1; the device comprises a buffer layer 2, an N-side Bragg reflector 3, a bottom cavity 4, a quantum well 5, a top cavity 6, an oxide layer 7, a P-side Bragg reflector 8 and a surface layer 9 which are sequentially grown on a substrate 1. In the oxidized epitaxial structure, according to an embodiment of the present invention, with reference to fig. 3The oxide layer 7 is Al0.98GaAs and is changed into Al after the oxidation process2O3。
According to the embodiment of the invention, the transmission matrix method is to solve the electric field and the magnetic field on two adjacent layers by using Maxwell equations to obtain a transmission matrix, and then the single-layer conclusion is popularized to the whole medium space to obtain the thickness and the components of multiple layers, so that the transmission coefficient and the reflection coefficient of the whole multilayer medium can be calculated.
S200: carrying out epitaxial growth according to the simulated epitaxial structure before oxidation so as to obtain an actual epitaxial structure before oxidation;
in this step, epitaxial growth is performed according to parameters of the simulated epitaxial structure before oxidation to obtain an actual epitaxial structure before oxidation, which includes a substrate 1 with reference to fig. 2; the device comprises a buffer layer 2, an N-side Bragg reflector 3, a bottom cavity 4, a quantum well 5, a top cavity 6, an oxide layer 7, a P-side Bragg reflector 8 and a surface layer 9 which are sequentially grown on a substrate 1. In the embodiment of the present invention, the specific method for performing the epitaxial growth is not limited, and the skilled person can freely select the method.
Further, the step S200 further includes: increasing lambda in AlGaAs of any layer of the N-side Bragg reflector or the P-side Bragg reflector2/2 an integer multiple of the optical thickness, where λ2Indicating the emission wavelength of the vertical cavity surface emitting laser. According to the optical principle, increasing lambda2Cavity lengths that are integer multiples of/2 wavelength optical thickness do not affect the white light reflectance spectrum of the device. It should be noted that: increasing lambda2The integral multiple of the optical thickness of the/2 wavelength does not affect the white light reflection main spectrum of the device, but affects the side spectrum, and the size of the oxidation aperture is observed and judged mainly through the reflectivity difference of the side spectrum. Thereby increasing lambda by N-side or P-side bragg mirrors2And/2, the integral multiple of the optical thickness is used for improving the reflectivity difference of the white light reflection spectrum, so that the imaging of the brightness is more intuitively observed, and the size of the oxidation aperture is judged. Further, λ is added to AlGaAs of either layer of the N-side bragg mirror or the P-side bragg mirror2An optical thickness of/2, wherein2Indicating the emission wavelength of the vertical cavity surface emitting laser. Thereby increasing lambda by N-side or P-side bragg mirrors2The optical thickness of/2 is used to improve the reflectance difference of the white light reflectance spectrum, so that the imaging of the brightness and darkness is more intuitively observed, and the size of the oxidation aperture is judged.
S300: testing the reflectivity corresponding to different wavelengths of the actual epitaxial structure before oxidation by using a reflection spectrum testing machine so as to obtain a second white light reflection spectrum corresponding to the actual epitaxial structure before oxidation;
in this step, a reflectance spectrum tester is used to test the reflectances of the actual epitaxial structure before oxidation corresponding to different wavelengths, so as to obtain a second white light reflectance spectrum corresponding to the actual epitaxial structure before oxidation.
S400: adjusting the first white light reflection contrast map according to the second white light reflection map so as to obtain a third white light reflection contrast map;
in this step, the first white light reflectance contrast map is adjusted according to the second white light reflectance map in the above step, so that the first white light reflectance contrast map obtained by simulation/calculation using a transmission matrix method is closer to an epitaxial structure actually grown. And obtaining the components and the thickness of the actually grown epitaxial structure by the obtained second white light reflection map through a transmission matrix method, adjusting and optimizing the actually grown epitaxial structure by comparing the epitaxial structure obtained by the first white light reflection map, and finally obtaining the second white light reflection map of the actually grown epitaxial structure, wherein the second white light reflection map is matched with the first white light reflection map in a consistent manner. In the embodiment of the present invention, the specific method of adjustment is not limited, and those skilled in the art can select it at will.
S500: selecting any point corresponding to the same wavelength and having a reflectivity difference value of not less than 15% before and after oxidation on the third white light reflection contrast map so as to obtain the corresponding wavelength lambda1；
In the step, any point with the reflectivity difference value of more than or equal to 15% is selected by comparing the reflectivities of the epitaxial structure before oxidation and the epitaxial structure after oxidation on the third white light reflection contrast map under the same wavelength, so as to obtain the corresponding wavelength lambda of the point1. The difference of the reflectivity is more than or equal to 15 percent, and the obvious light and shade difference can be seen. In the embodiment of the present invention, the specific choice of the reflectivity difference is not particularly limited as long as the reflectivity difference is equal to or greater than 15%, and the skilled person can choose the reflectivity difference at will, and as a preferred method, the reflectivity difference is selected to be 15% or 18%. In an embodiment of the invention, the wavelength λ1The specific value of (A) is not particularly limited as long as the difference in reflectance is not less than 15%, and the value can be arbitrarily selected by those skilled in the art, and as a preferred method, the value of λ is1730nm or 750nm is chosen.
S600: arranged below the observation platform (lambda)1-5)～(λ1+5) any wavelength of the filter or/and monochromatic laser, and judging whether the oxide aperture reaches the required size according to whether the pre-made images with different brightness are generated at the oxidation mark on the observation platform.
In this step, (lambda) is set below the observation stand1-5)～(λ1+5) any wavelength of the filter or/and the monochromatic laser, the filter may be set independently, the monochromatic laser may be set independently, or both the filter and the monochromatic laser may be set simultaneously. Because the white light wave band is wider, the observation platform has no obvious difference in view on the whole, but the light filter and/or the monochromatic laser with the specific wave band are used, so that the obvious light and dark diaphragm can be seen on the observation platform, the oxidation process can be observed on the observation platform, and the size of the oxidation aperture can be further judged. The filters are respectively arranged at (lambda)1-5)～(λ1+5), but high reflectivity at other wave band, filtering out light at other wave band, only reflecting light at the wave band, installing the filter at reasonable position, and feeding back different brightness imaging according to difference characteristic of high and low reflectivity of filter, thus obtaining size of required oxidized aperture rapidly and accurately. The function of the monochromatic laser is as follows: using sheetsThe color laser has the characteristics of good consistency and no interference of light beams, and the size of the oxide aperture can be quickly and accurately judged by imaging different brightness and darkness fed back by high and low reflectivity differences in a specific wave band.
In the embodiment of the invention, the oxidation mark with the required size is made on the observation platform in advance, and when the oxidation mark is oxidized to the required size, images with different shades can be observed at the oxidation mark made on the observation platform in advance, so that the size of the oxidation aperture can be judged quickly and accurately. As a preferable mode, the oxidation mark of 8um is made on the observation stand in advance.
The following embodiments of the present invention are described in detail, and it should be noted that the following embodiments are exemplary only, and are not to be construed as limiting the present invention. In addition, all reagents used in the following examples are commercially available or can be synthesized according to methods herein or known, and are readily available to those skilled in the art for reaction conditions not listed, if not explicitly stated.
Example 1
The present embodiment provides a method of testing an oxide aperture of a vertical cavity surface emitting laser, according to an embodiment of the present invention, the method including:
(1) the method comprises the steps of firstly simulating a vertical cavity surface emitting laser before oxidation by adopting a transmission matrix method to obtain a simulated epitaxial structure of the vertical cavity surface emitting laser before oxidation and a white light reflection simulation/calculation map (shown in figure 4) corresponding to the simulated epitaxial structure, then simulating the vertical cavity surface emitting laser after oxidation to obtain the simulated epitaxial structure of the vertical cavity surface emitting laser after oxidation and a white light reflection map corresponding to the simulated epitaxial structure, and integrating the white light reflection map before oxidation and the white light reflection map after oxidation to obtain a comparison simulation/calculation map before and after oxidation process, namely a first white light reflection comparison map.
(2) And carrying out epitaxial growth according to the simulated epitaxial structure before oxidation to obtain the actual epitaxial structure before oxidation.
(3) And testing the reflectivity corresponding to different wavelengths of the actual epitaxial structure before oxidation by using a reflection spectrum testing machine to obtain a second white light reflection spectrum corresponding to the actual epitaxial structure before oxidation.
(4) And adjusting the first white light reflection contrast map according to the second white light reflection map to obtain a third white light reflection contrast map, wherein the third white light reflection contrast map is as shown in the attached figure 5. As can be seen from FIG. 5, the simulation/calculation graphs before and after oxidation have no obvious difference in the white-light main spectrum, and the Dip wavelength has slight fluctuation because the oxide layer Al0.98GaAs is changed into Al after the oxidation process2O3The light path is slightly deviated, so that the reflectivity difference of the spectrum before and after oxidation in the left side frame is larger at two wave bands of 730nm and 750 nm. The difference of the reflectance within the range of 730nm +/-5 nm is 15 percent, and the difference of the reflectance within the range of 750nm +/-5 nm is 18 percent.
(5) A730 nm or 750nm filter with the spectrum width of 10nm is added on an observation platform of an oxidation furnace, and the specific principle is as follows: the filter is transparent in the 730nm + -5 nm range and the 750nm + -5 nm range, respectively, but has high reflectivity in other bands, as shown in fig. 6. The optical filter is arranged at a reasonable position, and the size of the required oxidized aperture can be quickly and accurately obtained according to the imaging of different brightness fed back by the difference characteristics of the high and low reflectances of the optical filter.
The ideal oxidation aperture is between 8um and 8.5um, firstly, an oxidation mark with the size of 8um is made on an observation platform, then a 730nm or 750nm optical filter is installed under the observation platform, and then the imaging with different brightness and darkness fed back by the high and low reflectivity difference characteristic is carried out, so that the size of the oxidation aperture required by us can be quickly and accurately obtained, wherein the plan view of the oxidation aperture on the observation platform is shown in figure 7, wherein A is an oxidation table top, and B is the oxidation aperture.
Example 2
This embodiment provides a method for testing the oxide aperture of a vertical cavity surface emitting laser, wherein a single-color laser of 730nm or 750nm is respectively mounted on the observation platform of an oxidation apparatus, and the rest is the same as embodiment 1.
Example 3
This embodiment provides a method for testing a VCSELMethod for oxidizing aperture by adding lambda to AlGaAs layer of top cavity 62An optical thickness of/2, wherein2Indicating the emission wavelength of the vertical cavity surface emitting laser. The rest is the same as in example 1. According to the optical principle, increasing lambda2The cavity length of integral multiple of the optical thickness of 2 wavelength does not affect the white light reflection spectrum of the device, FIG. 9 is the optical thickness standing wave diagram of the epitaxial structure, FIG. 10 is the increased lambda of the AlGaAs layer in the P-side Bragg reflector2The optical thickness standing wave diagram of/2 wavelength, the abscissa of the graph is the number of layers of the epitaxial structure, the ordinate of the graph is the relative electric field intensity, the curve in the table shows the corresponding phase at this position, as can be seen from FIGS. 9 and 10, increasing λ2Integer multiples of/2 wavelength optical thickness do not cause phase changes. The simulation/calculation chart shown in fig. 8 was obtained by the transmission matrix method, and also there was no significant difference in the white main spectrum compared with fig. 6 of example 1, but the reflectance difference in the 730nm + -5 nm range (left-side frame-selected middle range) was increased from 15% to 31%, and the reflectance difference in the 750nm + -5 nm range (left-side frame-selected middle range) was increased from 18% to 27%.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (7)

1. A method of testing an oxide aperture of a vertical cavity surface emitting laser, comprising:
(1) respectively simulating the vertical cavity surface emitting lasers before and after oxidation by adopting a transmission matrix method so as to obtain a simulated epitaxial structure of the vertical cavity surface emitting lasers before and after oxidation and a first white light reflection contrast map corresponding to the simulated epitaxial structure;
(2) carrying out epitaxial growth according to the simulated epitaxial structure before oxidation so as to obtain an actual epitaxial structure before oxidation;
(3) testing the reflectivity corresponding to different wavelengths of the actual epitaxial structure before oxidation by using a reflection spectrum testing machine so as to obtain a second white light reflection spectrum corresponding to the actual epitaxial structure before oxidation;
(4) adjusting the first white light reflection contrast map according to the second white light reflection map so as to obtain a third white light reflection contrast map;
(5) selecting any point corresponding to the same wavelength and having a reflectivity difference value of not less than 15% before and after oxidation on the third white light reflection contrast map so as to obtain the corresponding wavelength lambda1；
(6) Arranged below the observation platform (lambda)1-5)～(λ1+5) any wavelength of the filter or/and monochromatic laser, and judging whether the oxide aperture reaches the required size according to whether the pre-made images with different brightness are generated at the oxidation mark on the observation platform.
2. The method of claim 1, wherein the actual epitaxial structure comprises:
a substrate;
the device comprises a buffer layer, an N-side Bragg reflector, a bottom cavity, a quantum well, a top cavity, an oxidation layer, a P-side Bragg reflector and a surface layer which are sequentially grown on a substrate.
3. The method of claim 2, wherein step (2) further comprises:
increasing λ in AlGaAs of either layer of the N-side Bragg mirror or the P-side Bragg mirror2/2 an integer multiple of the optical thickness, where λ2Indicating the emission wavelength of the vertical cavity surface emitting laser.
4. Method according to claim 3, characterized in that λ is increased in AlGaAs of either layer of the N-side or P-side bragg mirrors2An optical thickness of/2, wherein2Indicating the emission wavelength of the vertical cavity surface emitting laser.
5. The method of claim 1, wherein λ1730nm or 750nm is chosen.
6. The method of claim 1, wherein the difference in reflectivity is selected to be 15% or 18%.
7. The method according to claim 1, wherein in step (6), an oxidation mark of 8um is previously made on the observation stand.
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