CN107331672A - A kind of integrated on-plane surface UV photodetector of lenticule and its array - Google Patents
A kind of integrated on-plane surface UV photodetector of lenticule and its array Download PDFInfo
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- CN107331672A CN107331672A CN201710423435.0A CN201710423435A CN107331672A CN 107331672 A CN107331672 A CN 107331672A CN 201710423435 A CN201710423435 A CN 201710423435A CN 107331672 A CN107331672 A CN 107331672A
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- lenticule
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- photodetector
- plane surface
- integrated
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 22
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- -1 group III-nitride Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004449 solid propellant Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of lenticule and its integrated on-plane surface UV photodetector of array, including metal electrode, microlens array and semiconductor base material；Microlens array is arranged in semiconductor base material；Metal electrode is symmetrically produced on the two edges of the lenticule of each in microlens array so that lenticule intermediate face is allocated as light area, and marginal portion is covered by metal electrode.The present invention can improve photosensitive area area by integral micro-lens and its array, while incident light rays can be improved to the light intensity in unit volume, increase photo-generated carrier density and gain of light coefficient inside semiconductor.The electrode structure of this on-plane surface UV photodetector is compared to conventional planar electrode, with stronger carrier capture ability.In addition, the UV photodetector of the present invention is simple in construction, large-scale production is easily realized.
Description
Technical field
The present invention relates to UV photodetector technical field, more particularly to a kind of on-plane surface UV photodetector.
Background technology
UV photodetector be widely applied to fire defector, solid fuel component analysis, environmental pollution monitoring,
The fields such as DNA tests, guided missile tracking, rocket launching, Ultraviolet Communication and actinometry.Traditional UV photodetector is usually
Photomultiplier, it can by and its faint ultraviolet light be converted into electric signal, and this transfer process is needed in vacuum tube
Complete.It is frangible because vacuum tube volume is big, and electronics will could be accelerated transmitting under high voltages, and this makes it complete
The requirement of the full up small-sized low consumption of foot, therefore seriously limit its application in many aspects.Comparatively speaking, semiconductor optoelectronic is detected
Device not only has the structure of Compact robust, high-quantum efficiency, low driving voltage, and many materials are in the severe rugged environments such as high temperature
Can steady operation.First generation semiconductor silicon and second generation gaas compound semiconductor, the material such as indium phosphide is due to taboo
Bandwidth is small, and device cut-off wave is grown up, and the low factor of maximum operating temperature causes the characteristic of device and using in the presence of very big limitation
Property, it is impossible to satisfaction is more widely applied.Third generation wide bandgap semiconductor materials mainly include carborundum, gallium nitride, zinc oxide
With diamond etc., big with energy gap compared with first and second generation electronic material, carrier drift saturated velocity is high, and dielectric is normal
Number is small, the features such as good heat conductivity, is suitable for making radioresistance, high frequency, the electronic device of high-power and High Density Integration is utilized
Its distinctive broad stopband can make UV photodetector.However, these materials cause because photoresponse electric current is small by than
Not high, sensitivity is low, limits them and is more widely applied.Shadow of the performance of UV photodetector by many factors
Ring, the superior UV photodetector of processability to start with from the following aspects：1. semiconductor material with wide forbidden band
Growing technology；2. the key process technology of wide bandgap semiconductor UV photodetector；3. the design and optimization of panel detector structure.
Concern with people to wide-band gap material, it is grown and technology is greatly improved, high-quality material and high-precision light
Carving technology is achieved.Design by optimizing panel detector structure, which improves device performance, but still to have greatly improved space.
The content of the invention
It is an object of the invention to provide a kind of lenticule and its integrated on-plane surface UV photodetector of array, to carry
The photoresponse ability of high UV photodetector.
To achieve these goals, the present invention is adopted the following technical scheme that：
The integrated on-plane surface UV photodetector of a kind of lenticule and its array, including metal electrode, microlens array
And semiconductor base material；Microlens array is directly prepared in semiconductor base material；Metal electrode is symmetrically produced on micro-
On the two edges of the lenticule of each in lens array lenticule intermediate face is allocated as light area, marginal portion quilt
Metal electrode is covered.
Further, lenticule is convex lens.
Further, lenticule profile is circular or polygon, the array arrangement mode of microlens array is close-packed hexagonal,
Cubic or single-row arrangement.
Further, lenticule is single lenticule or multiple microlens arrays in microlens array.
Further, the size of lenticule is identical or different in microlens array.
Further, metal electrode is symmetrically covered in lenticule edge, and metal electrode is edge in lenticule edge portions
Lenticule curved edge or along straight line covering part lenticule edge.
Further, the width and spacing of metal electrode are determined according to the arrangement mode of lenslet dimension and array, are made
The position of each column lenticule and electrode all equivalent symmetricals.
Further, metal electrode is interdigital structure electrode.
Further, in microlens array between lenticule spacing at 0.1-10 μm；The diameter of lenticule is in 0.5-500 μ
m。
Further, the material of semiconductor base material be diamond, group III-nitride, carborundum, silicon or other have
The semi-conducting material of ultraviolet light photo response.
Relative to prior art, the invention has the advantages that：
The present invention increases light entry area to improve the incident efficiency of light using microlens structure.Meanwhile, preparation it is micro-
Lens are convex lens, with converging beam effect, so that the incident optical density increase on surface, improves photo-generated carrier
The gain of light coefficient of density and device.Further, since lenticule is a kind of three-dimensional structure relative to planar structure, in its edge system
Standby obtained electrode is also different from plane electrode.There is certain angle between this non-planar electrode, add between electrode
Electrostatic force, so as to improve the ability that electrode captures carrier, can effectively improve the photoresponse ability of UV photodetector.
Brief description of the drawings
Fig. 1 is the structure tangent plane signal of the integrated on-plane surface UV photodetector of a kind of lenticule of the invention and its array
Figure；
Fig. 2 is the structural representation of the integrated on-plane surface UV photodetector of microlens array；
Fig. 3 is that the integrated nonplanar diamond of the microlens array that method is prepared in embodiment 1 under 20V biass is purple
Outer photodetector is compared figure with conventional planar diamond UV photodetector optical responsivity.
Wherein, 1. metal electrode；2. lenticule；3. semiconductor base material.
Embodiment
Refer to shown in Fig. 1, the integrated on-plane surface UV photodetector of a kind of lenticule and its array of the invention, including
Metal electrode 1, microlens array and semiconductor base material 3.
Semiconductor base material 3 is provided with the microlens array formed by some lenticules 2；Metal electrode 1 is symmetrically made
Make on the two edges of each lenticule 2 the intermediate face of lenticule 2 to be allocated as light area, marginal portion is by metal
Electrode 1 is covered.
In microlens array, lenticule 2 can be single, can be proper alignment or irregular alignment
's.
Lenticule 2 is convex lens, and its profile is circular, square, hexagon etc., array arrangement mode be close-packed hexagonal,
Cubic or single-row arrangement.
The size of lenticule 2 can be homogeneous or inhomogenous.
Metal electrode 1 is symmetrically covered in the edge of lenticule 2, metal electrode 1 the edge portions of lenticule 2 can be along
The curved edge of lenticule 2, or along the mode at straight line covering part edge.
Depending on arrangement mode of the width and spacing of metal electrode 1 according to the size of lenticule 2 and array, it is ensured that each column is micro-
The position of lens 2 and metal electrode 1 all equivalent symmetricals.
Embodiment 1：
The lenticule battle array that arrangement mode is close-packed hexagonal is prepared by reflow method and dry etching on a diamond substrate
Row, each lenticule 2 is bull's-eye, and diameter is about 15 μm, 1 μm of spacing；
By photoetching and magnetron sputtering technique, interdigital structure tungsten electrode is prepared on microlens array, tungsten electrode is symmetrically
It is produced on the two edges of each lenticule 2 so that the intermediate face of lenticule 2 is allocated as light area, marginal portion is by tungsten
Electrode is covered；6.5 μm of electrode width, 7.5 μm of spacing, so as to obtain the integrated on-plane surface ultraviolet photoelectric detection of microlens array
Device.Refer to shown in Fig. 3, the integrated on-plane surface Buddha's warrior attendant for the microlens array that method is prepared in embodiment 1 under 20V is biased
Stone UV photodetector is compared with conventional planar diamond UV photodetector optical responsivity；As can be seen from Figure the former
Responsiveness is above conventional planar diamond UV photodetector in ultraviolet band.
Embodiment 2：
The AlGaN films for growing one layer of 10 μ m-thick on a sapphire substrate by the use of MOCVD are used as semiconductor base material；
By reflow method and it is dry-etched in semiconductor base material surface to prepare arrangement mode micro- for Square array
Lens array, each lenticule 2 is a diameter of 15 μm of square convex lens, and spacing is 1 μm；
By photoetching and magnetron sputtering technique, interdigital structure titanium/aluminium/gold system electrode, electrode is prepared on microlens array
7.5 μm of width, 6.5 μm of spacing carries out the integrated on-plane surface UV photodetector that short annealing obtains microlens array.
Embodiment 3：
The lenticule battle array that arrangement mode is single-row arrangement is prepared by reflow method and being dry-etched in diamond substrate
Row, each lenticule 2 is hexagon convex lens；Diameter is about 30 μm, 2 μm of spacing；
By photoetching and magnetron sputtering technique, interdigital structure titanium electrode, the μ of electrode width 12 are prepared on microlens array
M, 15 μm of spacing carries out the integrated on-plane surface UV photodetector that short annealing obtains microlens array.
The present invention photosensitive area area can be improved by integral micro-lens and its array, while can inside semiconductor incite somebody to action
Incident light rays and improve the light intensity in unit volume, increase photo-generated carrier density and gain of light coefficient；This on-plane surface
The electrode structure of UV photodetector is compared to conventional planar electrode, with stronger carrier capture ability.In addition, this hair
Simple in construction, the easily realization large-scale production of bright UV photodetector.
Claims (10)
1. the integrated on-plane surface UV photodetector of a kind of lenticule and its array, it is characterised in that including metal electrode, micro-
Lens array and semiconductor base material；
Microlens array is directly prepared in semiconductor base material；
Metal electrode, which is symmetrically produced on the two edges of the lenticule of each in microlens array, causes sphere in the middle of lenticule
Part is as light area, and marginal portion is covered by metal electrode.
2. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, lenticule is convex lens.
3. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, lenticule profile is circular or polygon, and the array arrangement mode of lenticule is close-packed hexagonal, cubic or single-row arrangement.
4. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, lenticule is single lenticule or multiple microlens arrays in microlens array.
5. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, the size of lenticule is identical or different in microlens array.
6. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, metal electrode is symmetrically covered in lenticule edge, metal electrode is along lenticule curve in lenticule edge portions
Edge or along straight line covering part lenticule edge.
7. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
Be, the width and spacing of metal electrode are determined according to the arrangement mode of lenslet dimension and array, make each column lenticule and
The position of electrode all equivalent symmetricals.
8. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
It is, metal electrode is interdigital structure electrode.
9. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
Be, in microlens array between lenticule spacing at 0.1-10 μm；The diameter of lenticule is at 0.5-500 μm.
10. the integrated on-plane surface UV photodetector of a kind of lenticule according to claim 1 and its array, its feature
Be, the material of semiconductor base material be diamond, group III-nitride, carborundum, silicon or other there is ultraviolet light photo response
Semi-conducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423435.0A CN107331672B (en) | 2017-06-07 | 2017-06-07 | Integrated non-planar ultraviolet photoelectric detector of micro-lens array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423435.0A CN107331672B (en) | 2017-06-07 | 2017-06-07 | Integrated non-planar ultraviolet photoelectric detector of micro-lens array |
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| Publication Number | Publication Date |
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| CN107331672A true CN107331672A (en) | 2017-11-07 |
| CN107331672B CN107331672B (en) | 2020-08-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594370A (en) * | 2021-07-16 | 2021-11-02 | 华中科技大学 | CsPbCl with omnibearing imaging function3Spherical ultraviolet detector and preparation method thereof |
| CN116532808A (en) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080290434A1 (en) * | 2007-05-23 | 2008-11-27 | National Taiwan University | Color photodetector apparatus with multi-primary pixels |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| CN101562208A (en) * | 2009-06-02 | 2009-10-21 | 吉林大学 | Back incident-type TiO* UV detector and preparation method thereof |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
-
2017
- 2017-06-07 CN CN201710423435.0A patent/CN107331672B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080290434A1 (en) * | 2007-05-23 | 2008-11-27 | National Taiwan University | Color photodetector apparatus with multi-primary pixels |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| CN101562208A (en) * | 2009-06-02 | 2009-10-21 | 吉林大学 | Back incident-type TiO* UV detector and preparation method thereof |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
Non-Patent Citations (1)
| Title |
|---|
| C.L. LEE ET AL.: "Fabrication and characterization of diamond micro-optics", 《DIAMOND AND RELATED MATERIALS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594370A (en) * | 2021-07-16 | 2021-11-02 | 华中科技大学 | CsPbCl with omnibearing imaging function3Spherical ultraviolet detector and preparation method thereof |
| CN116532808A (en) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
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