CN215644514U - Composite grid line electrode of solar cell, solar cell and photovoltaic module - Google Patents

Composite grid line electrode of solar cell, solar cell and photovoltaic module Download PDF

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CN215644514U
CN215644514U CN202122626791.7U CN202122626791U CN215644514U CN 215644514 U CN215644514 U CN 215644514U CN 202122626791 U CN202122626791 U CN 202122626791U CN 215644514 U CN215644514 U CN 215644514U
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grid line
alloy layer
solar cell
composite
line electrode
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于琨
刘长明
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Zhejiang Jinko Solar Co Ltd
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Zhejiang Jinko Solar Co Ltd
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    • Y02E10/547Monocrystalline silicon PV cells

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Abstract

The application relates to a composite grid line electrode of a solar cell, the solar cell and a photovoltaic module, wherein the composite grid line electrode comprises a main grid line and an auxiliary grid line, at least one of the main grid line and the auxiliary grid line is a composite grid line, and the composite grid line sequentially comprises a silver-aluminum-platinum alloy layer, a copper-nickel alloy layer and a copper-silver alloy layer which are stacked; the height of the silver-aluminum-platinum alloy layer is less than 5 mu m, the height of the copper-nickel alloy layer is 15-25 mu m, and the height of the copper-silver alloy layer is 5-10 mu m; the ratio of the height to the width of the composite grid line is (0.5-3): 1. The method adopts the layered composite alloy electrode to replace the full-silver electrode, thereby not only reducing the manufacturing cost of the electrode, but also improving the contact property of the grid line and the PN junction, the density of the grid line, the corrosion resistance and other properties; meanwhile, the composite grid line electrode provided by the application also has lower resistance, and the power loss of a solar cell using the composite grid line electrode can be reduced.

Description

Composite grid line electrode of solar cell, solar cell and photovoltaic module
Technical Field
The application relates to the technical field of photovoltaics, in particular to a composite grid line electrode of a solar cell, the solar cell and a photovoltaic module.
Background
The solar photovoltaic cell (photovoltaic cell for short) is used for directly converting solar energy into electric energy. Silicon solar cells with silicon as a substrate are widely used in terrestrial photovoltaic systems and can be classified into single crystal silicon, polycrystalline silicon and amorphous silicon solar cells.
After the solar photovoltaic cell is subjected to the processes of texturing, diffusion, PECVD and the like, a PN junction is already formed, current can be generated under illumination, and in order to lead out the generated current, a positive electrode and a negative electrode are required to be manufactured on the surface of the cell. The method for manufacturing the electrode is various, and the screen printing is the most common production process for manufacturing the electrode of the solar cell at present. The metal grid line electrode prepared by screen printing is responsible for leading photo-generated current in the cell body to the outside of the cell, and the design of the metal grid line electrode can affect the series resistance, the output power, the manufacturing cost and the like of the solar cell.
SUMMERY OF THE UTILITY MODEL
In view of the problems in the background art, the present application provides a composite grid line electrode of a solar cell, a solar cell and a photovoltaic module.
The application provides a composite grid line electrode of a solar cell, which comprises a main grid line and an auxiliary grid line, wherein at least one of the main grid line and the auxiliary grid line is the composite grid line. The composite grid line sequentially comprises a silver-aluminum-platinum alloy layer, a copper-nickel alloy layer and a copper-silver alloy layer which are stacked; wherein the height of the silver-aluminum-platinum alloy layer is less than 5 mu m, the height of the copper-nickel alloy layer is 15-25 mu m, and the height of the copper-silver alloy layer is 5-10 mu m; the ratio of the height to the width of the composite grid line is (0.5-3): 1.
with the expansion of the productivity of the photovoltaic cell, the exploitation and processing of the noble metal silver are relatively slow, and the price and cost of the metalized silver paste are increased. Compared with the prior art, the composite grid line electrode adopts the structure of the composite grid line to at least one of the main grid line and the auxiliary grid line, and the composite grid line sequentially comprises a silver-aluminum-platinum alloy layer, a copper-nickel alloy layer and a copper-silver alloy layer which are stacked. In the silver-aluminum-platinum alloy layer, silver and aluminum elements can improve the contact between the grid line electrode and the solar cell PN junction, and platinum elements can improve the uniformity of Schottky barrier distribution. In the copper-nickel alloy layer, the cost of nickel is lower, nickel element is easy to passivate, a plating layer with good binding force can be obtained, the density of the grid line can be increased by adding the copper element, and the contact resistance of the grid line is reduced. The use of a certain silver element in the copper-silver alloy layer can improve the corrosion resistance effect of the grid line. Therefore, the alloy composite electrode is adopted to replace an all-silver electrode, so that the consumption of noble metal silver required in the preparation process of the solar cell electrode can be reduced, the effect of manufacturing cost of the electrode of the solar cell is reduced, meanwhile, the contact property of the grid line electrode and a PN junction can be improved, and the compactness, the corrosion resistance and other performances of the grid line electrode are improved.
In order to make the composite grid line electrode have a lower line resistance than the conventional silver grid line electrode, the application also provides the height ranges of the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer in the composite grid line and the aspect ratio of the composite grid line. When the height of the silver-aluminum-platinum alloy layer is less than 5 mu m, the height of the copper-nickel alloy layer is 15-25 mu m, and the height of the copper-silver alloy layer is 5-10 mu m; and the ratio of the height to the width of the composite grid line is (0.5-3): 1, the composite grid line electrode of the solar cell provided by the application has lower resistance, so that the power loss of the solar cell using the composite grid line electrode can be reduced.
A second aspect of the present application provides a solar cell comprising a composite grid line electrode as provided in the first aspect of the present application. Specifically, in the solar cell provided in the second aspect of the present application, the composite grid line electrode may be a front grid line electrode of the solar cell, and may also be a back grid line electrode of the solar cell.
The solar cell provided by the application can be an N-type TOPCon solar cell. The N-type TOPCon solar cell comprises an N-type silicon substrate comprising opposing front and back surfaces; the back surface of the N-type silicon substrate comprises a tunneling oxide layer, a doped polycrystalline silicon layer, a back passivation layer and a back grid line electrode, and the front surface of the N-type silicon substrate comprises an emitter, a front passivation layer and a front grid line electrode; wherein the front grid line electrode and/or the back grid line electrode is the composite grid line electrode provided by the first aspect of the present application.
The solar cell provided by the application can also be a P-type PERC solar cell. The P-type PERC solar cell comprises a P-type silicon substrate, wherein the P-type silicon substrate comprises a front surface and a back surface which are opposite; the back surface of the P-type silicon substrate comprises a back passivation layer and a back grid line electrode, and the front surface of the P-type silicon substrate comprises an emitter, a front passivation layer and a front grid line electrode; wherein the front grid line electrode and/or the back grid line electrode is the composite grid line electrode provided by the first aspect of the present application.
A third aspect of the present application provides a photovoltaic module comprising a laminate and a frame; the laminated part sequentially comprises a transparent cover plate, an upper packaging layer, a solar cell string, a lower packaging layer and a back plate which are stacked, and the frame is positioned on the side surface of the laminated part and used for sealing the edge of the laminated part; wherein the solar cell string comprises a plurality of solar cells provided by the second aspect of the present application.
Because the composite grid line electrode provided by the first aspect of the application is used in the solar cell and the photovoltaic module provided by the application, the solar cell and the photovoltaic module have the advantages of small series resistance, small power loss, large output power and the like.
Drawings
Fig. 1 is a schematic view of a layered structure of a composite grid line according to some embodiments of the present application;
fig. 2 is a schematic structural diagram of a N-type topocon solar cell according to some embodiments of the present application;
FIG. 3 is a schematic diagram of a P-type PERC solar cell according to some embodiments of the present application;
fig. 4 is a schematic structural view of a laminate in a photovoltaic module according to some embodiments of the present application.
Detailed Description
Embodiments of the present invention will be described in detail below. The following embodiments are merely used to more clearly illustrate the technical solutions of the present application, and therefore, the following embodiments are only used as examples, and the scope of the present application is not limited thereby. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
With the expansion of the productivity of the photovoltaic cell, the mining and processing speed of the noble metal silver is relatively slow, and the price and cost of the metalized silver paste are increased, so that the problem of cost increase is brought to the manufacturing of grid electrodes in the solar cell. In addition, in the photovoltaic cell, grid line electrodes prepared by screen printing are responsible for leading photo-generated current in the cell to the outside of the cell, and the design of the grid line electrodes is also closely related to the power output of the cell.
In view of the above technical objects, some embodiments of the present invention provide a composite gate line electrode for a solar cell, including a main gate line and a sub gate line, wherein at least one of the main gate line and the sub gate line is a composite gate line. Fig. 1 is a schematic view of a layered structure of a composite grid line according to some embodiments of the present application. As shown in fig. 1, the composite gate line sequentially includes a silver-aluminum-platinum alloy layer 1, a copper-nickel alloy layer 2, and a copper-silver alloy layer 3. Wherein the height of the silver-aluminum-platinum alloy layer 1 is less than 5 mu m, the height of the copper-nickel alloy layer 2 is 15-25 mu m, and the height of the copper-silver alloy layer 3 is 5-10 mu m; the ratio of the height to the width of the composite grid line is (0.5-3): 1.
the composite gate line electrode provided by some embodiments of the present application adopts a composite gate line structure for at least one of the main gate line and the auxiliary gate line, and the composite gate line sequentially includes a stacked ag-al-pt alloy layer, a cu-ni alloy layer, and a cu-ag alloy layer. In the silver-aluminum-platinum alloy layer, silver and aluminum elements can improve the contact with a PN junction of the grid line solar cell, and platinum elements can improve the uniformity of Schottky barrier distribution. In the copper-nickel alloy layer, the density of the grid line can be increased and the contact resistance of the grid line can be reduced due to the addition of the copper element; the cost of nickel is low, the nickel element is easy to passivate, and the addition of the element is beneficial to obtaining a plating layer with good bonding force. In the copper-silver alloy layer, a certain amount of silver element is added on the basis of using copper element, so that the corrosion resistance effect of the grid line can be improved. Therefore, the alloy composite electrode is adopted to replace a silver electrode, so that the consumption of noble metal silver in the preparation process of the grid line electrode can be reduced, the manufacturing cost of the electrode is reduced, and the contact property of the metal grid line electrode and a PN junction, the density and the corrosion resistance of the metal grid line electrode and other properties are improved. In addition, in the embodiment of the present application, the height of the ag-al-pt alloy layer is less than 5 μm, the height of the cu-ni alloy layer is 15 to 25 μm, and the height of the cu-ag alloy layer is 5 to 10 μm; and the ratio of the height to the width of the composite grid line is (0.5-3): the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer which form the composite grid line respectively have proper heights according to the characteristics of metal elements contained in the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer, so that the composite grid line electrode of the embodiment of the application has lower resistance while reducing the manufacturing cost of the electrode and improving the performance of the electrode, and the power loss of a solar cell using the composite grid line electrode is reduced.
In embodiments of the present application, the ag-al-pt alloy layer makes good contact with the PN junction of the cell; the copper-nickel alloy layer with good compactness and low contact resistance plays a better conductive role at lower production cost; the copper-silver alloy layer is conductive and the reliability of the packaged assembly is guaranteed. Some embodiments of the present application provide superior height ratios of the layers in the composite grid line, depending on the role and characteristics of the composite layers. Specifically, in some embodiments of the present application, the ratio of the heights of the ag-al-pt alloy layer, the cu-ni alloy layer, and the cu-ag alloy layer is 1: 4: 2, so that each alloy layer can realize the technical effect to the maximum extent.
In the solar cell structure, the reduction of the width of the grid lines can reduce the required optimal grid line distance, thereby greatly reducing the total relative power loss of top layer transverse current and the relative power loss caused by shading of the grid lines, and finally reducing the total power loss caused by electrodes. Under the condition that the width of the grid line is fixed, the height of the grid line is increased, the resistance of the grid line is reduced, the short-circuit current is increased, and the photoelectric conversion efficiency of the solar cell is improved. Based on the above consideration, some embodiments of the present application also provide an optimization scheme for the height, width and aspect ratio of the composite grid line. Specifically, in some embodiments of the present application, the height of the composite grid line is greater than 25 μm, and the width of the composite grid line is 10 to 25 μm; the ratio of the height to the width of the composite grid line is 2: 1; the height of the main grid line is smaller than that of the auxiliary grid line, so that the total power loss caused by the electrode is smaller, and the photoelectric conversion efficiency of the solar cell is as high as possible.
The composite grid line electrode provided by some embodiments of the present application can be prepared by an electroplating process, and specifically, a silver-aluminum-platinum alloy layer, a copper-nickel alloy layer and a copper-silver alloy layer in the composite grid line are sequentially subjected to layered metal deposition by using the electroplating process. Firstly, depositing a silver-aluminum-platinum alloy layer to ensure that the height of the silver-aluminum-platinum alloy layer is less than 5 mu m; then, depositing a copper-nickel alloy layer to enable the height of the copper-nickel alloy layer to be 15-25 mu m; and finally, depositing the copper-silver alloy layer to ensure that the height of the copper-silver alloy layer is 5-10 mu m. And after the layered metal deposition, annealing and light hydrogen passivation are carried out to obtain the composite grid line electrode.
Some embodiments of the present application also provide a solar cell including the composite grid line electrode according to the first aspect of the present application. In some embodiments of the present application, the composite grid line electrode is a front grid line electrode of a solar cell; in some embodiments of the present application, the composite grid line electrode is a back grid line electrode of a solar cell; in some embodiments of the present application, the composite grid line electrode is a front grid line electrode and a back grid line electrode of a solar cell.
In an embodiment of the application, the solar cell further includes a silicon substrate, and the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer in the composite gate line are sequentially stacked in a direction away from the silicon substrate, that is, the silver-aluminum-platinum alloy layer of the composite gate line is close to the silicon substrate, and the copper-silver alloy layer is far away from the silicon substrate. In the composite grid line, the silver-aluminum-platinum alloy layer can improve the contact with a PN junction of the solar cell, so that the silver-aluminum-platinum alloy layer is more suitable for being arranged close to a silicon substrate and at the innermost layer of the composite grid line; the copper-silver alloy layer can improve the corrosion resistance effect of the grid line, so that the copper-silver alloy layer is suitable for being far away from the silicon substrate and arranged on the outermost layer of the composite grid line; the copper-nickel alloy layer is arranged between the silver-aluminum-platinum alloy layer and the copper-silver alloy layer, and the thickness of the copper-nickel alloy layer is larger than that of the silver-aluminum-platinum alloy layer and the copper-silver alloy layer, so that the manufacturing cost of the electrode can be effectively reduced.
In some embodiments of the present application, the solar cell provided may be a N-type TOPCon solar cell. Fig. 2 is a schematic structural diagram of an N-type TOPCon solar cell according to some embodiments of the present application. As shown in fig. 2, the N-type TOPCon solar cell includes: an N-type silicon substrate 101, the N-type silicon substrate 101 comprising opposing front and back surfaces; the back surface of the N-type silicon substrate 101 comprises a tunneling oxide layer 102, a doped polysilicon layer 103, a back passivation layer 104 and a back gate line electrode 105, and the front surface of the N-type silicon substrate 101 comprises an emitter 106, a front passivation layer 107 and a front gate line electrode 108. Wherein the front grid line electrode 108 of the N-type TOPCon solar cell is the composite grid line electrode; or the back grid line electrode 105 of the N-type TOPCon solar cell is the composite grid line electrode; or the front grid line electrode 108 and the back grid line electrode 105 of the N-type TOPCon solar cell are both the composite grid line electrode; and the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer in the composite grid line are sequentially stacked in the direction departing from the N-type silicon substrate 101.
The solar cell provided by the application can also be a P-type PERC solar cell. Fig. 3 is a schematic structural diagram of a P-type PERC solar cell according to some embodiments of the present application. As shown in fig. 3, the P-type PERC solar cell includes: a P-type silicon substrate 201, the P-type silicon substrate 201 comprising opposing front and back surfaces; the back surface of the P-type silicon substrate 201 comprises a back passivation layer 202 and a back grid line electrode 203, and the front surface of the P-type silicon substrate 201 comprises an emitter 204, a front passivation layer 205 and a front grid line electrode 206. Wherein, the front grid line electrode 206 of the P-type PERC solar cell is the composite grid line electrode; or the back grid line electrode 203 of the P-type PERC solar cell is the composite grid line electrode; or both the front grid line electrode 206 and the back grid line electrode 203 of the P-type PERC solar cell are the composite grid line electrodes, and the silver-aluminum-platinum alloy layer, the copper-nickel alloy layer and the copper-silver alloy layer in the composite grid line are sequentially stacked in the direction departing from the P-type silicon substrate.
Some embodiments of the present application also provide a photovoltaic module, the photovoltaic module includes lamination piece and frame, the frame is located the side of lamination piece is right the lamination piece carries out the banding. Fig. 4 is a schematic structural view of a laminate in a photovoltaic module according to some embodiments of the present application. As shown in fig. 4, the laminate includes a transparent cover sheet 11, an upper encapsulant layer 12, a solar cell string 13, a lower encapsulant layer 14, and a back sheet 15, which are stacked in this order. Wherein the solar cell string 13 comprises a plurality of solar cells according to the embodiments of the present application.
Through detection, the composite grid line electrode has the advantages that the production cost is reduced, the compactness and the corrosion resistance are good, the electrode performance is improved, and the line resistance and the contact resistance are obviously reduced; the short-circuit current is increased. Because the solar cell and the photovoltaic module that this application provided include the compound grid line electrode of this application first aspect, therefore not only have lower manufacturing cost, and series resistance is less, power loss is the lowest, has bigger output, and the promotion of above-mentioned a series of performances is especially important to the solar cell of large tracts of land power output.
Variations and modifications to the above-described embodiments may occur to those skilled in the art based upon the disclosure and teachings of the above specification. Therefore, the present application is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present application should fall within the scope of the claims of the present application. In addition, although specific terms are used herein, they are used in a descriptive sense only and not for purposes of limitation.

Claims (10)

1. A composite grid line electrode of a solar cell comprises a main grid line and an auxiliary grid line, and is characterized in that at least one of the main grid line and the auxiliary grid line is the composite grid line; the composite grid line sequentially comprises a silver-aluminum-platinum alloy layer, a copper-nickel alloy layer and a copper-silver alloy layer which are stacked; wherein the height of the silver-aluminum-platinum alloy layer is less than 5 mu m, the height of the copper-nickel alloy layer is 15-25 mu m, and the height of the copper-silver alloy layer is 5-10 mu m; the ratio of the height to the width of the composite grid line is (0.5-3): 1.
2. the composite grid line electrode of a solar cell of claim 1, wherein the ratio of the heights of the Ag-Al-Pt alloy layer, the Cu-Ni alloy layer and the Cu-Ag alloy layer is 1: 4: 2.
3. the composite grid line electrode of the solar cell of claim 1, wherein the height of the composite grid line is greater than 25 μm, and the width of the composite grid line is 10-25 μm.
4. The composite grid line electrode of claim 3, wherein the ratio of the height to the width of the composite grid line is 2: 1.
5. the composite grid line electrode of claim 4, wherein the height of the main grid line is less than the height of the minor grid line.
6. A solar cell comprising the composite grid line electrode of any one of claims 1 to 5, wherein the composite grid line electrode is a front grid line electrode and/or a back grid line electrode of the solar cell.
7. The solar cell according to claim 6, further comprising a silicon substrate, wherein the Ag-Al-Pt alloy layer, the Cu-Ni alloy layer and the Cu-Ag alloy layer in the composite grid line are sequentially stacked in a direction away from the silicon substrate.
8. The solar cell of claim 6, comprising: an N-type silicon substrate comprising opposing front and back sides; the back surface of the N-type silicon substrate comprises a tunneling oxide layer, a doped polycrystalline silicon layer, a back passivation layer and a back grid line electrode, and the front surface of the N-type silicon substrate comprises an emitter, a front passivation layer and a front grid line electrode.
9. The solar cell of claim 6, comprising: a P-type silicon substrate comprising opposing front and back surfaces; the back of the P-type silicon substrate comprises a back passivation layer and a back grid line electrode, and the front of the P-type silicon substrate comprises an emitter, a front passivation layer and a front grid line electrode.
10. A photovoltaic assembly includes a laminate and a frame; the laminated part sequentially comprises a transparent cover plate, an upper packaging layer, a solar cell string, a lower packaging layer and a back plate which are stacked, and the frame is positioned on the side surface of the laminated part and used for sealing the edge of the laminated part; wherein the solar cell string comprises a plurality of solar cells of claim 6.
CN202122626791.7U 2021-10-29 2021-10-29 Composite grid line electrode of solar cell, solar cell and photovoltaic module Active CN215644514U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115302120A (en) * 2022-09-16 2022-11-08 常州时创能源股份有限公司 Welding method of battery piece and photovoltaic prefabricated part
WO2023157935A1 (en) * 2022-02-16 2023-08-24 株式会社マテリアル・コンセプト Solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023157935A1 (en) * 2022-02-16 2023-08-24 株式会社マテリアル・コンセプト Solar cell
CN115302120A (en) * 2022-09-16 2022-11-08 常州时创能源股份有限公司 Welding method of battery piece and photovoltaic prefabricated part

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