CN108461569B - Si-based double-sided solar cell structure with local emitter characteristic - Google Patents
Si-based double-sided solar cell structure with local emitter characteristic Download PDFInfo
- Publication number
- CN108461569B CN108461569B CN201810198915.6A CN201810198915A CN108461569B CN 108461569 B CN108461569 B CN 108461569B CN 201810198915 A CN201810198915 A CN 201810198915A CN 108461569 B CN108461569 B CN 108461569B
- Authority
- CN
- China
- Prior art keywords
- crystalline silicon
- heavily doped
- layer
- passivation
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
A Si-based double-sided solar cell structure with local emitter characteristics takes an n-type crystalline silicon wafer as a substrate, and an emitter surface is divided into an emitter-conductive area and a passivation-light entering area: the former consists of a heavily doped p-type crystalline silicon emitter layer and a metal grid line I; the passivation-light inlet region consists of a heavily doped n-type crystalline silicon field passivation layer I and a passivation antireflection layer I; the back electric field surface is divided into a passivation-light inlet area and a back electric field-conductive area: the former is composed of a heavily doped crystalline silicon layer and a passivated antireflection layer II; the latter is formed by heavily doped crystalline silicon and a metal grid line II. On the premise of keeping the double-sided light-entering characteristic of the crystalline silicon solar cell, the invention obtains higher open-circuit voltage and short-circuit current and improves the power generation capacity of the crystalline silicon solar cell to the maximum extent.
Description
Technical Field
The invention belongs to the field of solar cells and semiconductor devices. Relates to a preparation technology of a solar cell.
Background
For a double-sided crystalline silicon solar cell, a PERT structure has been focused on in the solar cell industry because of high efficiency due to good compatibility with the existing crystalline silicon production line for diffusion junction manufacturing. However, the development of solar cells with this structure is currently suffering from bottlenecks, and one of the keys lies in the performance of the emitter layer formed by boron diffusion and the preparation technology thereof. The boron doping concentration must be high in order to achieve a higher open circuit voltage, but this will lead to an increase in carrier recombination. Furthermore, the low sheet resistance required for the lateral transport loss of carriers in the boron doped layer is contradictory to the technical improvement direction of increasing the boron doping concentration (which causes an increase in recombination loss) required to achieve this condition.
How to solve this conflict is crucial to the development of the PERT technology, and we consider that starting from the design of the device structure may be an effective breakthrough. The present invention is an attempt in this direction.
Disclosure of Invention
The invention is realized by the following technical scheme.
The invention relates to a Si-based double-sided solar cell structure with local emitter characteristics, which takes an n-type crystal silicon wafer (5) as a substrate, and the emitter surface of the Si-based double-sided solar cell structure is divided into an emitter-conductive area and a passivation-light entering area: the emitter-conductive region is formed by a heavily doped p-type crystalline silicon emitter layer (2) and a metal grid line I (1) from a substrate to the outside in sequence, wherein the heavily doped p-type crystalline silicon emitter layer (2) is small in slotting, the metal grid line I (1) is slightly large in slotting, and a region without the heavily doped p-type crystalline silicon emitter layer (2) between the metal grid line I (1) and an n-type crystalline silicon slice (5) is filled with a passivation antireflection layer I (3); the passivation-light inlet region is formed by a heavily doped n-type crystalline silicon field passivation layer I (4) and a passivation antireflection layer I (3) from the substrate to the outside in sequence. The two regions are distributed across and do not overlap.
The passivated anti-reflection layer I (3) according to the invention is preferably silicon nitride.
The emitter and the heavily doped n-type crystalline silicon field passivation layer I (4) are preferably subjected to insulation treatment.
Further, in order to improve the performance of the device, the thickness of the heavily doped n-type crystalline silicon field passivation layer I (4) is preferably 1-300 nm.
The Si-based double-sided solar cell structure with the local emitter characteristic is a double-sided light-entering solar cell, and positive and negative electrodes of the Si-based double-sided light-entering solar cell are respectively positioned on two surfaces of a substrate of an n-type crystal silicon wafer (5). The other side (back electric field side) of the solar cell outside the emitter side is structurally divided into a passivation-light entering area and a back electric field-conductive area: the passivation-light inlet region is sequentially provided with a heavily doped crystalline silicon field passivation layer (6) and a passivation antireflection layer II (7) from the substrate to the outside; the back electric field-conductive region is sequentially provided with a heavily doped crystal silicon layer (8) and a metal grid line II (9) from the substrate to the outside, wherein the groove of the heavily doped crystal silicon layer (8) is smaller, the groove of the metal grid line II (9) is slightly larger, and the region without the heavily doped crystal silicon layer (8) between the metal grid line II (9) and the n-type crystal silicon wafer (5) is filled with a passivated antireflection layer II (7); the two regions are distributed across and do not overlap.
Wherein the thickness of the heavily doped crystalline silicon field passivation layer (6) is preferably 1-100nm, and the doping type is preferably p-type; the passivated antireflection layer II (7) is preferably an aluminum oxide + silicon nitride composite film.
Furthermore, in order to improve the performance of the device, the n-type crystal silicon wafer (5) can be subjected to double-sided texturing so as to further improve the short-circuit current of the solar cell.
Furthermore, the texturing conditions of the two sides of the n-type crystal silicon wafer (5) can be different, one side of the n-type crystal silicon wafer adopts a textured surface with a pyramid structure with a smaller size, and the other side of the n-type crystal silicon wafer adopts a pyramid textured surface with a larger size or a polishing structure without pyramids.
Furthermore, the area with the metal grid lines (metal grid line I and metal grid line II) can be polished or textured with pyramids with larger sizes so as to reduce recombination loss and improve the open-circuit voltage of the solar cell.
Furthermore, the proportion of the total coverage area of the metal grid lines (metal grid lines I and metal grid lines II) on the surface of the device is preferably 1-3% so as to improve the short-circuit current of the solar cell and ensure good enough conductivity.
Further, the heavily doped crystalline silicon layer (8) is preferably n-doped.
The invention has the technical effects that: the invention is suitable for monocrystalline silicon wafer solar cells, polycrystalline silicon wafer solar cells and quasi-monocrystalline silicon wafer solar cells. On the premise of keeping the double-sided light inlet characteristics of the crystalline silicon solar cell, higher open-circuit voltage and short-circuit current are obtained, and the power generation capacity of the crystalline silicon solar cell is improved to the greatest extent. The mechanism is that high open-circuit voltage is obtained through the p-type heavily doped crystalline silicon emitter and a matched structure under the coverage area of the metal grid line, and the structure can only consider the electrical performance of the emitter and does not need to balance the degree of light absorption loss like an emitter layer in a PERT structure; compared with a structure that a heavy doping n-type crystalline silicon field passivation layer is combined with a surface antireflection passivation layer at a position without a metal grid line, the structure can reduce short-circuit current and open-circuit voltage reduction caused by carrier recombination loss compared with a structure that a PERT full-surface heavy doping p-type layer is combined with a passivation layer. On the emitter surface, the generated photo-generated holes enter the bulk silicon under the push of a built-in electric field formed by the heavily doped n-type layer, and then flow to the emitter region in a concentrated manner, so that a high-current effect similar to a concentrating solar cell is formed, the built-in potential of the solar cell can be further improved, and the voltage of the solar cell is further improved; the generated electrons only flow to the metal electrode on the other side of the silicon chip to be collected because the heavily doped n-type region of the emitter surface has no electrode.
Drawings
FIG. 1 is a schematic diagram of the present invention. Wherein: 1 is a metal grid line I; 2 is a heavily doped p-type crystalline silicon emitter layer; 3 is a passivated antireflection layer I; 4 is a heavily doped n-type crystalline silicon field passivation layer I; 5 is an n-type crystal silicon wafer; 6 is a heavily doped crystalline silicon field passivation layer; 7 is a passivated antireflection layer II; 8 is a heavily doped crystalline silicon layer; and 9 is a metal grid line II.
Detailed Description
The invention will be further illustrated by the following examples.
Example 1.
A Si-based bifacial solar cell structure with localized emitter characteristics as shown in figure 1. The surface of the n-type crystalline silicon wafer 5 adopts pyramid suede structures with the average size of 3 micrometers in the areas with the passivated antireflection layer I3 and the passivated antireflection layer II 7, and adopts chemical polishing surface structures (without suede) in the areas with the heavily doped p-type crystalline silicon emitter layer 2 and the heavily doped crystalline silicon field passivation layer 6. The thickness of the heavily doped n-type crystalline silicon field passivation layer I4 is 300 nm; the heavily doped crystalline silicon field passivation layer 6 is doped in an n type mode, and the thickness is 5 nm; the passivated antireflection layer II 7 is an aluminum oxide + silicon nitride composite film. The metal grid lines I1 and the metal grid lines II 9 are sequentially composite metal electrodes of nickel/copper/silver from the surface of the silicon wafer, and occupy 2% of the surface area of the silicon wafer. The groove widths of the metal grid line I1 and the metal grid line II 9 are 30 micrometers, and the groove widths of the heavily doped p-type crystalline silicon emitter layer 2 and the heavily doped p-type crystalline silicon layer 8 are 20 micrometers.
The light inlet characteristics of the two surfaces of the solar cell structure are both excellent, and the solar cell structure can be used as a main light inlet surface. If the solar cell is used as a single-side light-entering solar cell, a layer of metal can be plated on the back light surface to be used as a reflecting layer, so that the short-circuit current of the single-side light-entering solar cell is increased.
Example 2.
A Si-based bifacial solar cell structure with localized emitter characteristics as shown in figure 1. The surface of the n-type crystal silicon wafer 5 adopts a pyramid suede structure with the average size of 2 microns. The thickness of the heavily doped n-type crystalline silicon field passivation layer I4 is 300 nm; the heavily doped crystalline silicon field passivation layer 6 is doped in an n type mode, and the thickness is 5 nm; and the passivated antireflection layer II 7 is a silicon oxide + silicon nitride composite film. The metal grid lines I1 and the metal grid lines II 9 are pure silver electrodes and occupy 1.5% of the surface area of the silicon wafer. The groove widths of the metal grid line I1 and the metal grid line II 9 are 10 micrometers, and the groove widths of the heavily doped p-type crystalline silicon emitter layer 2 and the heavily doped n-type crystalline silicon layer 8 are 8 micrometers.
The light inlet characteristics of the two surfaces of the solar cell structure are both excellent, and the solar cell structure can be used as a main light inlet surface. If the solar cell is used as a single-side light-entering solar cell, a layer of metal can be plated on the back light surface to be used as a reflecting layer, so that the short-circuit current of the single-side light-entering solar cell is increased.
Claims (3)
1. A Si-based double-sided solar cell structure with local emitter characteristics is characterized in that an n-type crystalline silicon wafer (5) is used as a substrate, and an emitter surface is divided into an emitter-conductive area and a passivation-light incoming area: the emitter-conductive region is formed by a heavily doped p-type crystalline silicon emitter layer (2) and a metal grid line I (1) from a substrate to the outside in sequence, wherein the heavily doped p-type crystalline silicon emitter layer (2) is small in groove, the metal grid line I (1) is large in groove, and the region without the heavily doped p-type crystalline silicon emitter layer (2) between the metal grid line I (1) and an n-type crystalline silicon slice (5) is filled with a passivation antireflection layer I (3); the passivation-light inlet region is formed by a heavily doped n-type crystalline silicon field passivation layer I (4) and a passivation antireflection layer I (3) which are distributed in a crossed manner and are not overlapped from the substrate to the outside in sequence;
the back electric field surface structure is divided into a passivation-light inlet area and a back electric field-conductive area: the passivation-light inlet region is sequentially provided with a heavily doped crystalline silicon layer (6) and a passivation antireflection layer II (7) from the substrate to the outside; the back electric field-conductive region is sequentially provided with heavily doped crystalline silicon (8) and a metal grid line II (9) from the substrate to the outside, wherein the heavily doped crystalline silicon (8) is small in groove, the metal grid line II (9) is large in groove, a region without the heavily doped crystalline silicon (8) between the metal grid line II (9) and the n-type crystalline silicon wafer (5) is filled with a passivation antireflection layer II (7), and the two regions are distributed in a crossed manner and are not overlapped;
the passivated antireflection layer I (3) is silicon nitride;
insulation treatment is carried out between the emitter and the heavily doped n-type crystalline silicon field passivation layer I (4);
the thickness of the heavily doped n-type crystalline silicon field passivation layer I (4) is 1-300 nm;
the thickness of the heavily doped crystalline silicon layer (6) is 1-100nm, and the doping type is p type;
the passivated antireflection layer II (7) is an aluminum oxide + silicon nitride composite film;
the double-sided texturing condition of the n-type crystal silicon wafer (5): one side adopts a suede of a small-size pyramid structure, and the other side adopts a large-size pyramid suede or a pyramid-free polishing structure;
the proportion of the total coverage area of the metal grid lines on the surface of the device is 1-3%;
and the emitter surface and the back electric field surface can be used as main light inlet surfaces.
2. The structure of claim 1, wherein the metal grid lines are polished or pyramidal with large size.
3. A Si-based bifacial solar cell structure with local emitter characteristics as claimed in claim 1, characterized in that the heavily doped crystalline silicon (8) is n-type doped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810198915.6A CN108461569B (en) | 2018-03-12 | 2018-03-12 | Si-based double-sided solar cell structure with local emitter characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810198915.6A CN108461569B (en) | 2018-03-12 | 2018-03-12 | Si-based double-sided solar cell structure with local emitter characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461569A CN108461569A (en) | 2018-08-28 |
| CN108461569B true CN108461569B (en) | 2020-07-14 |
Family
ID=63219851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810198915.6A Active CN108461569B (en) | 2018-03-12 | 2018-03-12 | Si-based double-sided solar cell structure with local emitter characteristic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108461569B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN102437243A (en) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
-
2018
- 2018-03-12 CN CN201810198915.6A patent/CN108461569B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN102437243A (en) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108461569A (en) | 2018-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
| US20100243042A1 (en) | High-efficiency photovoltaic cells | |
| CN102064216A (en) | Novel crystalline silicon solar cell and manufacturing method thereof | |
| CN107369726B (en) | n-type crystalline silicon double-sided solar cell | |
| CN110047952A (en) | A kind of solar battery Al grid line structure and preparation method thereof | |
| KR20200005534A (en) | Perforated PERC double-sided solar cell and its assembly, system and manufacturing method | |
| JP7168800B1 (en) | Solar cells and photovoltaic modules | |
| CN210956694U (en) | Back passivation solar cell structure | |
| CN209981254U (en) | Crystalline silicon double-sided solar cell structure | |
| CN102738263B (en) | Doping unit, doping wafer, doping method, battery and manufacturing method | |
| JP7245380B1 (en) | Solar cell, photovoltaic module and method for manufacturing solar cell | |
| CN115000198B (en) | Solar cell and photovoltaic module | |
| CN217606835U (en) | Solar cell and photovoltaic module | |
| KR101411996B1 (en) | High efficiency solar cells | |
| CN108461569B (en) | Si-based double-sided solar cell structure with local emitter characteristic | |
| CN102201480A (en) | Cadmium telluride semiconductor thin-film heterojunction solar cell based on N-shaped silicon slice | |
| CN210403742U (en) | Local emitter homogeneous crystal silicon double-sided solar cell structure | |
| CN209981253U (en) | Homogeneous crystal silicon double-sided solar cell structure | |
| CN208315557U (en) | A kind of crystal silicon double-side solar cell structure being passivated entering light layer | |
| CN209981227U (en) | Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region | |
| CN102738264B (en) | Doping unit, doping wafer, doping method, solar battery and manufacturing method | |
| CN111584650A (en) | High-efficient P type solar cell and photovoltaic module | |
| CN220290821U (en) | Battery structure and solar battery | |
| CN210110794U (en) | Low surface concentration deep junction solar cell | |
| CN220543926U (en) | Solar cell and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |