CN205452299U - Back of body passivation crystalline silicon solar cells - Google Patents
Back of body passivation crystalline silicon solar cells Download PDFInfo
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- CN205452299U CN205452299U CN201521142422.9U CN201521142422U CN205452299U CN 205452299 U CN205452299 U CN 205452299U CN 201521142422 U CN201521142422 U CN 201521142422U CN 205452299 U CN205452299 U CN 205452299U
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Abstract
The utility model discloses a back of body passivation crystalline silicon solar cells, crystalline silicon solar cells is from up include ag back electrode, the al back of the body electric field, siNx layer, intrinsic amorphous silicon layer, P+ amorphous silicon layer, P type silicon, N+ layer down, subtract anti - membrane and ag positive electrode in proper order, siNx layer, intrinsic amorphous silicon layer and P+ amorphous silicon layer all are equipped with evenly distributed's sharp light groove, al back of the body electric field passes evenly distributed's sharp light groove and the contact of P type silicon. Compared with the prior art, the utility model has following beneficial effects: : adopt the out -of -the -way passivating structure of P+ amorphous silicon layer, intrinsic amorphous silicon layer and the combination of siNx stromatolite, utilize non -crystalline silicon and P+P just to tie the passivation effect of excellence, greatly reduced the minority carrier recombination rate at the silicon chip back, promoted the conversion efficiency of battery, owing to the preparation of carrying on the back the passivation battery can be accomplished to simple equipment such as utilizing PECVD, the battery is with low costs, and easy industrialization is promoted.
Description
Technical field
This utility model relates to technical field of solar batteries, particularly relates to a kind of back of the body passivation crystal silicon solar energy battery.
Background technology
Back of the body passivation crystal silicon solar energy battery is by depositing passivation film at silicon chip back side, utilize the passivation effect that passivation film is excellent, reduce the minority carrier recombination speed of silicon chip back side, improve open-circuit voltage and the short circuit current of solaode, thus promote the conversion efficiency of battery；Overleaf in electrode preparation, by laser etching process so that aluminum back surface field is contacted with silicon chip by laser ablation groove, thus reaches the effect of current lead-through.Carrying on the back the most crucial technique of passivation cell is that passivation film selects and preparation technology, and it directly affects the quality of back of the body passivation effect.Mainstream technology is to prepare AlOx/SiNx laminated construction at silicon chip back side at present, and AlOx has the back of the body passivation effect of excellence, and SiNx plays the effect of protection AlOx.
Due to the complicated process of preparation of AlOx, apparatus expensive, high cost is unfavorable for the large-scale popularization of back of the body passivation crystal silicon solar energy battery；Additionally, the passivation effect of AlOx is not best, its improved efficiency limited extent to battery.Therefore, the efficiently back of the body passivation crystal silicon solar energy battery how developing a kind of low cost becomes the emphasis that researcher is paid close attention to.
Utility model content
Technical problem to be solved in the utility model is, it is provided that a kind of back of the body passivation crystal silicon solar energy battery, in the case of improving battery conversion efficiency, greatly reduces the manufacturing cost of battery.
In order to solve above-mentioned technical problem, this utility model provides a kind of back of the body passivation crystal silicon solar energy battery, and described crystal silicon solar energy battery includes Ag back electrode, Al back of the body electric field, SiNx layer, intrinsic amorphous silicon layer, P+ amorphous silicon layer, P-type silicon, N+ layer, antireflective film and Ag anelectrode the most successively；SiNx layer, intrinsic amorphous silicon layer, P+ amorphous silicon layer, P-type silicon, N+ layer and antireflective film are stacked setting, described SiNx layer, intrinsic amorphous silicon layer and P+ amorphous silicon layer are equipped with equally distributed laser groove, and described Al back of the body electric field contacts through equally distributed laser groove with P-type silicon.
As the improvement of such scheme, described P+ amorphous silicon layer thickness is 5-10nm, and resistivity is 0.5-1.5 Ω .cm.
As the improvement of such scheme, the thickness of described intrinsic amorphous silicon layer is 3-5nm, and resistivity is 105-107Ω.cm。
As the improvement of such scheme, described SiNx layer thickness is 85-120nm, and refractive index is 2.10-2.30.
As the improvement of such scheme, described laser groove area accounts for the 4-7% of silicon chip back side area.
All formed by PECVD method deposition as the improvement of such scheme, described intrinsic amorphous silicon layer and P+ amorphous silicon layer.
As the improvement of such scheme, described antireflective film is SiNx thin film or SiNx thin film and the bilayer film of SiOx Film laminated.
Compared with prior art, this utility model has the advantages that employing P+ amorphous silicon layer, intrinsic amorphous silicon layer and the back of the body passivating structure of SiNx stack combinations, utilize non-crystalline silicon and the passivation effect of P+/P height knot excellence, greatly reduce the minority carrier recombination speed of silicon chip back side, improve the conversion efficiency of battery；Owing to utilizing the simple equipment such as PECVD can complete to carry on the back the preparation of passivation cell, battery low cost, easy Industry Promotion.
Accompanying drawing explanation
Fig. 1 is a kind of back of the body passivation crystal silicon solar energy battery structural representation of the present utility model.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, this utility model is described in further detail.
As shown in Figure 1, a kind of back of the body passivation crystal silicon solar energy battery of the present utility model, crystal silicon solar energy battery includes that Ag back electrode 1, Al carry on the back electric field 2, SiNx layer 3, intrinsic amorphous silicon layer 4, P+ amorphous silicon layer 5, P-type silicon 6, N+ layer 7, antireflective film 8 and Ag anelectrode 9 the most successively；SiNx layer 3, intrinsic amorphous silicon layer 4, P+ amorphous silicon layer 5, P-type silicon 6, N+ layer 7 and antireflective film 8 are stacked setting, described SiNx layer 3, intrinsic amorphous silicon layer 4 and P+ amorphous silicon layer 5 are equipped with equally distributed laser groove 10, and Al back of the body electric field 2 contacts through equally distributed laser groove 10 with P-type silicon 6.
P+ amorphous silicon layer 5 thickness is 5-10nm, and resistivity is 0.5-1.5 Ω .cm:P+ amorphous silicon layer 5 and P-type silicon 6 forms P+/P height knot, can be substantially reduced the Carrier recombination speed of silicon chip back side；Containing H atom in non-crystalline silicon, dangling bonds and the defect of silicon chip surface can be filled up, be substantially reduced the Carrier recombination speed of silicon chip back side.
The thickness of intrinsic amorphous silicon layer 4 is 3-5nm, and resistivity is 105-107Ω.cm.SiNx layer 3 thickness is 85-120nm, and refractive index is 2.10-2.30.
Laser groove 10 area is accounted for the 4-7%:Al back surface field 2 of silicon chip back side area and is contacted with silicon chip by regional area, it is ensured that the passivation effect of composite back passivating film, meets again the contact of backplate and silicon, it is achieved that the conducting of electric current.
Intrinsic amorphous silicon layer 4 and P+ amorphous silicon layer 5 is all formed by PECVD method deposition, and PECVD method is simple, low cost.
Antireflective film 8 is SiNx thin film or SiNx thin film and the bilayer film of SiOx Film laminated, SiNx Film laminated at SiOx thin film upper surface or SiOx Film laminated at SiNx thin film upper surface.
Compared with prior art, this utility model has the advantages that employing P+ amorphous silicon layer, intrinsic amorphous silicon layer and the back of the body passivating structure of SiNx stack combinations, utilize non-crystalline silicon and the passivation effect of P+/P height knot excellence, greatly reduce the minority carrier recombination speed of silicon chip back side, improve the conversion efficiency of battery；Owing to utilizing the simple equipment such as PECVD can complete to carry on the back the preparation of passivation cell, battery low cost, easy Industry Promotion.
The above is preferred implementation of the present utility model; it should be pointed out that, for those skilled in the art, on the premise of without departing from this utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (7)
1. a back of the body passivation crystal silicon solar energy battery, it is characterised in that described crystal silicon solar energy battery includes Ag back electrode, Al back of the body electric field, SiNx layer, intrinsic amorphous silicon layer, P+ amorphous silicon layer, P-type silicon, N+ layer, antireflective film and Ag anelectrode the most successively；SiNx layer, intrinsic amorphous silicon layer, P+ amorphous silicon layer, P-type silicon, N+ layer and antireflective film are stacked setting, described SiNx layer, intrinsic amorphous silicon layer and P+ amorphous silicon layer are equipped with equally distributed laser groove, and described Al back of the body electric field contacts through equally distributed laser groove with P-type silicon.
2. a kind of back of the body passivation crystal silicon solar energy battery as claimed in claim 1, it is characterised in that described P+ amorphous silicon layer thickness is 5-10nm, and resistivity is 0.5-1.5 Ω .cm.
3. a kind of back of the body passivation crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the thickness of described intrinsic amorphous silicon layer is 3-5nm, and resistivity is 105-107Ω.cm。
4. a kind of back of the body passivation crystal silicon solar energy battery as claimed in claim 1, it is characterised in that described SiNx layer thickness is 85-120nm, and refractive index is 2.10-2.30.
5. a kind of back of the body passivation crystal silicon solar energy battery as claimed in claim 1, it is characterised in that described laser groove area accounts for the 4-7% of silicon chip back side area.
6. a kind of back of the body passivation crystal silicon solar energy battery as claimed in claim 1, it is characterised in that described intrinsic amorphous silicon layer and P+ amorphous silicon layer are all formed by PECVD method deposition.
7. back of the body passivation crystal silicon solar energy battery as claimed in claim 1 a kind of, it is characterised in that described antireflective film is SiNx thin film or SiNx thin film and the bilayer film of SiOx Film laminated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521142422.9U CN205452299U (en) | 2015-12-31 | 2015-12-31 | Back of body passivation crystalline silicon solar cells |
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| CN201521142422.9U CN205452299U (en) | 2015-12-31 | 2015-12-31 | Back of body passivation crystalline silicon solar cells |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336176A (en) * | 2018-03-12 | 2018-07-27 | 南昌大学 | A kind of Si bases local emitter double-side solar cell structure |
| CN108346706A (en) * | 2018-03-12 | 2018-07-31 | 南昌大学 | A kind of local emitter homojunction crystal silicon double-side solar cell structure |
| CN108365024A (en) * | 2018-03-12 | 2018-08-03 | 南昌大学 | A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature |
| CN108447935A (en) * | 2018-03-12 | 2018-08-24 | 南昌大学 | A kind of local emitter crystalline silicon double-side solar cell structure being passivated into photosphere |
| CN108461569A (en) * | 2018-03-12 | 2018-08-28 | 南昌大学 | A kind of Si base double-side solar cell structures with local emitter characteristic |
-
2015
- 2015-12-31 CN CN201521142422.9U patent/CN205452299U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336176A (en) * | 2018-03-12 | 2018-07-27 | 南昌大学 | A kind of Si bases local emitter double-side solar cell structure |
| CN108346706A (en) * | 2018-03-12 | 2018-07-31 | 南昌大学 | A kind of local emitter homojunction crystal silicon double-side solar cell structure |
| CN108365024A (en) * | 2018-03-12 | 2018-08-03 | 南昌大学 | A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature |
| CN108447935A (en) * | 2018-03-12 | 2018-08-24 | 南昌大学 | A kind of local emitter crystalline silicon double-side solar cell structure being passivated into photosphere |
| CN108461569A (en) * | 2018-03-12 | 2018-08-28 | 南昌大学 | A kind of Si base double-side solar cell structures with local emitter characteristic |
| CN108461569B (en) * | 2018-03-12 | 2020-07-14 | 南昌大学 | Si-based double-sided solar cell structure with local emitter characteristic |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180115 Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |