CN206412374U - A kind of HJT solar cells and its module - Google Patents
A kind of HJT solar cells and its module Download PDFInfo
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Abstract
The utility model discloses a kind of HJT solar cells and its module, it includes crystalline silicon substrate, it is disposed with the smooth surface of the crystalline silicon substrate on the first i types amorphous silicon film layer, p-type amorphous silicon film layer, transparent conductive oxide film layer and the first metal gate electrode, the back side of the crystalline silicon substrate and is disposed with the 2nd i types amorphous silicon film layer, n-type amorphous silicon film layer, n-type microcrystal silicon film layer, Metal Substrate conductive laminate and the second metal gate electrode.The utility model, which forms the Metal Substrate conductive laminate being made up of dielectric membranous layer and metallic diaphragm at the back side of crystalline silicon substrate, can reduce the sheet resistance of conductive film layer as conductive film layer, so as to reduce the usage amount of silver paste, reduce cost of manufacture, and the fill factor, curve factor of battery is improved, so as to enhance the performance of solar cell.
Description
Technical field
The utility model belongs to technical field of solar, more particularly to a kind of HJT solar cells and its module.
Background technology
Solar cell can convert sunlight directly into electric power, therefore as new energy source by more and more multinational
The attention of family.
Heterojunction with Intrinsic Thin layer solar cell abbreviation HJT solar cells,
It is invented by Sanyo earliest, and it is the solar cell of non-crystalline silicon/silicon/crystalline silicon heterojunction, is that one kind utilizes crystalline silicon substrate
The mixed type solar battery being made with amorphous silicon membrane.It is low because HJT solar cells have high photoelectric transformation efficiency
Temperature coefficient and the technology of preparing under the conditions of relative low temperature, the emphasis side researched and developed in recent years as photovoltaic industry
One of to.The efficiency of the HJT solar cells of Sanyo's industrialization of Japan is more than 23% at present, and its Laboratory efficiencies is
Exceed 25%.
Fig. 1 show the structural representation of existing HJT solar cells.In Fig. 1, by monocrystalline silicon, polysilicon etc.
Crystallization based semiconductor constitute n-type crystal class silicon substrate 1 an interarea on, intrinsic amorphous silicon layer（Namely i type amorphous silicon films
Layer）2nd, the lamination, and then be formed on transparent conductive oxide layer 4 and be made up of silver paste printing successively of p-type amorphous silicon layer 3
Gate electrode 8；Lamination intrinsic amorphous silicon layer 5, n-type amorphous silicon layer 6 successively on another interarea of crystal class silicon substrate 1, enter
And be formed on transparent conductive oxide layer 7 ' and the gate electrode 8 constituted is printed by silver paste；Common ITO is saturating herein
The square resistance of bright conductive oxide layer is general all in 30-60 Ω/, and this is accomplished by collecting current-carrying using more gate electrode
Son, so as to gate material（Such as silver paste）Demand increase.
Because the electric conductivity of amorphous silicon film layer is poor, so in HJT manufacturing process, in gate electrode and amorphous silicon film layer
Between set one layer of ito film layer effectively to increase the collection of carrier.Ito thin film has optical clear and conductive dual work(
Can, the collection to efficient carrier plays key effect, but can form certain Xiao Te between ito film layer and amorphous silicon film layer
Base is contacted, and Schottky contacts can cause the reduction of built in field to cause the reduction of open-circuit voltage, and when barrier height compared with
An additional string resistance can also be caused when big.Therefore higher barrier height reduces the open-circuit voltage of battery, while also increasing
The series resistance of battery, the increase of series resistance can cause the decline of battery fill factor, curve factor.In HJT solar cells, pass
The square resistance of ITO or IWO transparent conductive oxide film layers is typically all higher used in system, in order to increase the receipts of carrier
Collection requires the quantity of increase gate electrode, and this can cause gate material（Such as silver paste）The increase of usage amount, adds and is manufactured into
This, while the increase of gate electrode quantity can make the reduction of effective generating area of battery again.
The content of the invention
The purpose of this utility model is to provide a kind of HJT solar cells and its module to solve the above problems, this
Utility model advantageously reduces its series resistance by using Metal Substrate conductive laminate at the back side of crystalline silicon substrate, improves battery
Fill factor, curve factor, so as to enhance the performance of solar cell, and small number of grid line electricity can be used in the back side of crystalline silicon substrate
Pole, so as to reduce effective generating area of cost and increase cell backside.
Therefore, the utility model discloses a kind of HJT solar cells, including crystalline silicon substrate, the crystalline silicon substrate by
The first i types amorphous silicon film layer, p-type amorphous silicon film layer, transparent conductive oxide film layer and the first metal are disposed with smooth surface
The 2nd i types amorphous silicon film layer, n-type amorphous silicon film layer, Metal Substrate is disposed with gate electrode, the back side of the crystalline silicon substrate to lead
Electric lamination and the second metal gate electrode.
Further, the Metal Substrate conductive laminate is three-decker or five-layer structure；The three-decker is by the first electricity
Media coating, the first metallic diaphragm and the second dielectric membranous layer stack gradually composition；The five-layer structure is by the first dielectric film
Layer, the first metallic diaphragm, the 3rd dielectric membranous layer, the second metallic diaphragm and the second dielectric membranous layer stack gradually composition；It is described
First dielectric membranous layer is directly contacted with the n-type amorphous silicon film layer.
The invention also discloses a kind of HJT solar cells, including crystalline silicon substrate, the smooth surface of the crystalline silicon substrate
On be disposed with the first i types amorphous silicon film layer, p-type amorphous silicon film layer, transparent conductive oxide film layer and the first metal gate electricity
The 2nd i types amorphous silicon film layer, n-type amorphous silicon film layer, n-type microcrystalline sillicon film are disposed with pole, the back side of the crystalline silicon substrate
Layer, Metal Substrate conductive laminate and the second metal gate electrode.
Further, the Metal Substrate conductive laminate is three-decker or five-layer structure；The three-decker is by the first electricity
Media coating, the first metallic diaphragm and the second dielectric membranous layer stack gradually composition；The five-layer structure is by the first dielectric film
Layer, the first metallic diaphragm, the 3rd dielectric membranous layer, the second metallic diaphragm and the second dielectric membranous layer stack gradually composition；It is described
First dielectric membranous layer is directly contacted with the n-type microcrystal silicon film layer.
Further, the crystalline silicon substrate is monocrystalline silicon piece or polysilicon chip, and preferably described crystalline silicon substrate is n type single crystal silicon
Can contain in piece, the first and second i type amorphous silicon film layers can contain in the elements such as aerobic, carbon, germanium, the p-type amorphous silicon film layer
Can contain in the elements such as aerobic, carbon, the n-type amorphous silicon film layer can also contain in the elements such as aerobic, carbon, the n-type microcrystal silicon film layer
The elements such as aerobic, carbon.
Further, the first and second i types amorphous silicon film layer, p-type amorphous silicon film layer, n-type amorphous silicon film layer and n-type
All contain hydrogen in microcrystal silicon film layer.
Further, the transparent conductive oxide film layer is AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO
Film layer, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or
Tin oxide mixes antimony film layer.
Further, hydrogen is contained in the transparent conductive oxide film layer.
Further, first metal gate electrode and/or the second metal gate electrode be silver-colored gate electrode or copper gate electrode or
Its alloy gate electrodes.
Further, first dielectric membranous layer, the second dielectric membranous layer and the 3rd dielectric membranous layer respectively can be by one
Layer or many straton film layers are constituted.
Further, first dielectric membranous layer and second dielectric membranous layer be AZO film layers, GZO film layers,
IGZO film layers, BZO film layers, IZO film layers, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO film layers, titanium oxide layer,
Tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film layer；First metallic diaphragm and second metal
Film layer is golden membranous layer, silver film, copper film layer, aluminum membranous layer, chromium film layer, molybdenum film layer, niobium film layer, tungsten film layer, nickel film layer or its alloy
Film layer；3rd dielectric membranous layer is titanium oxide layer, titanium oxide tin film layer, titanium oxide niobium film layer, zinc oxide titanium film layer, oxygen
Change zinc film layer, indium oxide film layer, tin oxide film layer, molybdenum oxide film layer, niobium oxide film layer, zinc-tin oxide film layer, magnesium zinc film
Layer, zinc oxide silicon film, ito film layer, ITIO film layers, AZO film layers, IWO film layers, BZO film layers, GZO film layers, IZO film layers, IGZO
Film layer, IMO film layers, ICO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film layer.
The invention also discloses a kind of HJT solar modules, including stack gradually back substrate, second glue
Tie layer, above-mentioned HJT solar cells, the first tack coat and prebasal plate.
Further, the quantity of the HJT solar cells is multiple, and the plurality of HJT solar cells are cascaded
By busbar extraction electrode wiring.
Further, the first tack coat and the second tack coat are EVA（The abbreviation of ethylene-vinyl acetate copolymer）Or PVB
（The abbreviation of polyvinyl butyral resin）；The prebasal plate is glass substrate；The back substrate is glass substrate or resin
The substrate of material.
Advantageous effects of the present utility model：
The utility model can so make Metal Substrate conductive by using Metal Substrate conductive laminate at the back side of crystalline silicon substrate
Lamination obtains low square resistance, Metal Substrate conductive laminate and n-type microcrystal silicon film layer is directly contacted good ohm can be achieved
Contact, advantageously reduces its series resistance, improves the fill factor, curve factor of battery, so that the performance of solar cell is enhanced, in addition,
Small number of gate line electrode can be used in the back side of crystalline silicon substrate of the present utility model, you can reduce the grid electricity at the crystalline silicon substrate back side
The material of pole（Such as silver paste）Usage amount, thus manufacturing cost can be reduced, also increase effective generating area of cell backside.
Brief description of the drawings
Fig. 1 is a kind of existing structural representation of HJT solar cells；
Fig. 2 is a kind of structural representation of HJT solar cells of the present utility model；
Fig. 3 is the structural representation of another HJT solar cells of the present utility model.
Embodiment
The utility model is further illustrated in conjunction with the drawings and specific embodiments.
First illustrate herein, the ITO in the utility model refers to that the transparent conductive material of indium-doped tin oxide, ITIO refer to oxygen
It is Zinc oxide doped that transparent conductive material, the ICO of change indium doping titanium refer to that the transparent conductive material, the AZO that aoxidize indium doping cerium refer to
Transparent conductive material, the IWO of aluminium refer to that the transparent conductive material of indium oxide Doped Tungsten, BZO refer to the transparent of Zinc oxide doped boron
Conductive material, GZO refer to that the transparent conductive material of Zinc oxide doped gallium, IGZO refer to the electrically conducting transparent material of Zinc oxide doped indium gallium
Material, IZO refer to that the transparent conductive material of Zinc oxide doped indium, IMO refer to the transparent conductive material of indium oxide doping molybdenum；This practicality
Amorphous silicon film layer in new is all referring to there is the amorphous silicon film layer through over hydrogenation.
As shown in Fig. 2 a kind of HJT solar cells, including crystalline silicon substrate 1, on the smooth surface of the crystalline silicon substrate 1 successively
The first i types amorphous silicon film layer 2, p-type amorphous silicon film layer 3, the metal gate electrode 8 of transparent conductive oxide film layer 4 and first are provided with,
The 2nd i types amorphous silicon film layer 5, n-type amorphous silicon film layer 6, n-type microcrystalline sillicon film are disposed with the back side of the crystalline silicon substrate 1
Layer 9, the metal gate electrode 10 of Metal Substrate conductive laminate 7 and second.In this specific embodiment, the Metal Substrate conductive laminate 7 is served as reasons
First dielectric membranous layer 71, the first metallic diaphragm 72 and the second dielectric membranous layer 73 stack gradually the trilamellar membrane Rotating fields of composition,
First dielectric membranous layer 71 is directly contacted with the n-type microcrystal silicon film layer 9.
Fig. 3 show another HJT solar cells, and it is with the HJT solar cells difference shown in Fig. 2：It is described
Metal Substrate conductive laminate 7 is by the first dielectric membranous layer 71, the first metallic diaphragm 72, the 3rd dielectric membranous layer 74, the second metal
The dielectric membranous layer 73 of film layer 75 and second stacks gradually five tunic Rotating fields of composition, first dielectric membranous layer 71 with it is described
N-type microcrystal silicon film layer 9 is directly contacted.
Certainly in other embodiments, can also be without n-type microcrystal silicon film layer 9, the first dielectric membranous layer 71 is directly and n-type
Amorphous silicon film layer 6 is contacted.
Specifically, the crystalline silicon substrate 1 is monocrystalline silicon piece or polysilicon chip, preferably shown crystalline silicon substrate 1 is n type single crystal silicon
The elements such as aerobic, carbon, germanium can be contained in piece, the first i types amorphous silicon film layer 2 and the 2nd i types amorphous silicon film layer 5, the p-type is non-
Can contain in crystal silicon film layer 3 in the elements such as aerobic, carbon, the n-type amorphous silicon film layer 6 can contain the elements such as aerobic, carbon, and the n-type is micro-
Also the elements such as aerobic, carbon can be contained in crystal silicon film layer 9.It is preferred that, the first i types amorphous silicon film layer 2, the 2nd i type amorphous silicon films
All contain hydrogen in layer 5, p-type amorphous silicon film layer 3, n-type amorphous silicon film layer 6 and n-type microcrystal silicon film layer 9.
Specifically, the transparent conductive oxide film layer 4 is AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO
Film layer, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or
Tin oxide mixes antimony film layer, contains hydrogen in preferably described transparent conductive oxide film layer 4.
Specifically, the metal gate electrode 10 of the first metal gate electrode 8 and/or second be silver-colored gate electrode or copper gate electrode or
Its alloy gate electrodes.
Specifically, first dielectric membranous layer 71 and second dielectric membranous layer 73 be AZO film layers, GZO film layers,
IGZO film layers, BZO film layers, IZO film layers, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO film layers, titanium oxide layer,
Tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film layer；First metallic diaphragm 72 and second gold medal
Category film layer 75 be golden membranous layer, silver film, copper film layer, aluminum membranous layer, chromium film layer, molybdenum film layer, niobium film layer, tungsten film layer, nickel film layer or its
Alloy film layer；3rd dielectric membranous layer 74 is titanium oxide layer, titanium oxide tin film layer, titanium oxide niobium film layer, zinc oxide titanium
Film layer, zinc oxide film, indium oxide film layer, tin oxide film layer, molybdenum oxide film layer, niobium oxide film layer, zinc-tin oxide film layer, oxidation
Zinc-magnesium film layer, zinc oxide silicon film, ito film layer, ITIO film layers, AZO film layers, IWO film layers, BZO film layers, GZO film layers, IZO films
Layer, IGZO film layers, IMO film layers, ICO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film layer.
Wherein, the first i types amorphous silicon film layer 2, the 2nd i types amorphous silicon film layer 5, p-type amorphous silicon film layer 3, n-type amorphous silicon film
Layer 6 and n-type microcrystal silicon film layer 9 can using the method such as PECVD, filament CVD deposition, transparent conductive oxide film layer 4 and
Metal Substrate conductive laminate 7 can be using the methods such as PVD method, RPD methods, vapour deposition method, ALD, chemical vapour deposition technique deposition, crystal silicon
Substrate 1 is that the processing of the solution such as soda acid to be passed through makes the surface of crystalline silicon substrate form matte before depositional coating.
HJT solar cells of the present utility model will be illustrated by several specific embodiments below.In following examples,
It is to be sequentially depositing each film layer on clean crystalline silicon substrate surface after making herbs into wool.
Embodiment 1
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 8nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
8nm the 2nd i types amorphous silicon film layer 5,5nm n-type amorphous silicon film layer 6 and 10nm n-type are sequentially depositing on face using PECVD
Microcrystal silicon film layer 9；Then the ito film layer for 100nm being deposited in p-type amorphous silicon film layer 3 using sputtering method is used as electrically conducting transparent oxygen
Compound film layer 4；Then 25nm ito film layer 71,20nm silverskin are sequentially depositing in n-type microcrystal silicon film layer 9 using sputtering method
72 and 30nm of layer AZO film layers 73 are used as Metal Substrate conductive laminate 7；Then using silk screen print method in transparent conductive oxide film
Type metal gate electrode 8 and 10 on layer 4 and Metal Substrate conductive laminate 7, the material printed electrode uses silver paste, then by electricity
Pond piece is placed in the environment of 200 DEG C to be made annealing treatment to the gate electrode 8 and 10 of printing, in transparent conductive oxide film layer 4
The spacing of gate electrode 8 be 2mm, the spacing of the gate electrode 9 on Metal Substrate conductive laminate 7 is 2mm, and the HJT sun is thus made
Can battery.Finally HJT solar cells are tested, it is 79.8% to measure its fill factor, curve factor.
Embodiment 2
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 8nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
8nm the 2nd i types amorphous silicon film layer 5,15nm n-type amorphous silicon film layer 6 are sequentially depositing on face using PECVD；Then use
The ito film layer that sputtering method deposits 100nm in p-type amorphous silicon film layer 3 is used as transparent conductive oxide film layer 4；Then use and splash
Penetrate the GZO film layers 73 that method is sequentially depositing 25nm ito film layer 71,20nm silver film 72 and 40nm in n-type amorphous silicon film layer 6
It is used as Metal Substrate conductive laminate 7；Then using silk screen print method in transparent conductive oxide film layer 4 and Metal Substrate conductive laminate 7
Upper type metal gate electrode 8 and 10, the material printed electrode uses silver paste, and cell piece is then placed in 200 DEG C of environment
Under the gate electrode 8 and 10 of printing is made annealing treatment, the spacing of the gate electrode 8 in transparent conductive oxide film layer 4 is
2mm, the spacing of the gate electrode 9 on Metal Substrate conductive laminate 7 is 2mm, and HJT solar cells are thus made.Finally HJT to too
Positive energy battery is tested, and it is 79.2% to measure its fill factor, curve factor.
Embodiment 3
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 5nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
5nm the 2nd i types amorphous silicon film layer 5,5nm n-type amorphous silicon film layer 6 and 10nm n-type are sequentially depositing on face using PECVD
Microcrystal silicon film layer 9；Then the IWO film layers for 100nm being deposited in p-type amorphous silicon film layer 3 using sputtering method are used as electrically conducting transparent oxygen
Compound film layer 4；Then 25nm IWO film layers 71,15nm golden film are sequentially depositing in n-type microcrystal silicon film layer 9 using sputtering method
72 and 35nm of layer GZO film layers 73 are used as Metal Substrate conductive laminate 7；Then using silk screen print method in transparent conductive oxide film
Type metal gate electrode 8 and 10 on layer 4 and Metal Substrate conductive laminate 7, the material printed electrode uses silver paste, then by electricity
Pond piece is placed in the environment of 200 DEG C to be made annealing treatment to the gate electrode 8 and 10 of printing, in transparent conductive oxide film layer 4
The spacing of gate electrode 8 be 2mm, the spacing of the gate electrode 10 on Metal Substrate conductive laminate 7 is 2mm, and the HJT sun is thus made
Can battery.Finally HJT solar cells are tested, it is 79.1% to measure its fill factor, curve factor.
Embodiment 4
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 8nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
8nm the 2nd i types amorphous silicon film layer 5,5nm n-type amorphous silicon film layer 6 and 10nm n-type are sequentially depositing on face using PECVD
Microcrystal silicon film layer 9；Then the ICO film layers for 100nm being deposited in p-type amorphous silicon film layer 3 using RPD methods are used as transparent conductive oxide
Thing film layer 4；Then 25nm ito film layer 71,25nm copper film layer are sequentially depositing in n-type microcrystal silicon film layer 9 using sputtering method
72 and 30nm AZO film layers 73 are used as Metal Substrate conductive laminate 7；Then using silk screen print method in transparent conductive oxide film layer
4 and Metal Substrate conductive laminate 7 on type metal gate electrode 8 and 10, the material printed electrode uses silver paste, then by battery
Piece is placed in the environment of 200 DEG C to be made annealing treatment to the gate electrode 8 and 10 of printing, in transparent conductive oxide film layer 4
The spacing of gate electrode 8 is 2mm, and the spacing of the gate electrode 10 on Metal Substrate conductive laminate 7 is 2mm, and HJT solar energy is thus made
Battery.Finally HJT solar cells are tested, it is 80.1% to measure its fill factor, curve factor.
Comparative example 1
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 8nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
8nm the 2nd i types amorphous silicon film layer 5,15nm n-type amorphous silicon film layer 6 are sequentially depositing on face using PECVD；Then use
The ito film layer that sputtering method deposits 100nm in p-type amorphous silicon film layer 3 is used as transparent conductive oxide film layer 4；Then use and splash
Penetrate method and 100nm ito film layer is deposited in n-type amorphous silicon film layer 6 as transparent conductive oxide film layer 7 '；Then silk screen is used
Print process type metal gate electrode 8 in transparent conductive oxide film layer 4 and 7 ', the material printed electrode uses silver paste,
Then cell piece is placed in the environment of 200 DEG C and the gate electrode 8 of printing is made annealing treatment, in the smooth surface of monocrystalline silicon piece 1
The spacing of gate electrode 8 in transparent conductive oxide film layer 4 is 2mm, the transparent conductive oxide film layer at the back side of monocrystalline silicon piece 1
The spacing of gate electrode 8 on 7 ' is 2mm, and HJT solar cells are thus made.Finally HJT solar cells are tested, surveyed
It is 77.3% to obtain its fill factor, curve factor.
Comparative example 2
Prepare n type single crystal silicon piece 1, thickness is 180um, PECVD is then used on the smooth surface of n type single crystal silicon piece 1
It is sequentially depositing 8nm the first i types amorphous silicon film layer 2 and 15nm p-type amorphous silicon film layer 3；Then in the back of the body of n type single crystal silicon piece 1
8nm the 2nd i types amorphous silicon film layer 5,15nm n-type amorphous silicon film layer 6 are sequentially depositing on face using PECVD；Then use
The ito film layer that sputtering method deposits 100nm in p-type amorphous silicon film layer 3 is used as transparent conductive oxide film layer 4；Then use and splash
Penetrate method and 100nm ito film layer is deposited in n-type amorphous silicon film layer 6 as transparent conductive oxide film layer 7 '；Then silk screen is used
Print process type metal gate electrode 8 in transparent conductive oxide film layer 4 and 7 ', the material printed electrode uses silver paste,
Then cell piece is placed in the environment of 200 DEG C and the gate electrode 8 of printing is made annealing treatment, in the smooth surface of monocrystalline silicon piece 1
The spacing of gate electrode 8 in transparent conductive oxide film layer 4 is 2mm, the transparent conductive oxide film layer at the back side of monocrystalline silicon piece 1
The spacing of gate electrode 8 on 7 ' is 1mm, and HJT solar cells are thus made.Finally HJT solar cells are tested, surveyed
It is 78.2% to obtain its fill factor, curve factor.
Can be seen that the utility model from the comparison of above-described embodiment and comparative example can lift filling out for HJT solar cells
The factor is filled, thus the performance of heterojunction solar battery can be improved.
The invention also discloses a kind of HJT solar modules, including stack gradually back substrate, second glue
Tie layer, above-mentioned HJT solar cells, the first tack coat and prebasal plate.
Specifically, the quantity of the HJT solar cells is multiple, after the plurality of HJT solar cells are cascaded
Through the busbar extraction electrode wiring.
The tack coat is EVA or PVB；The prebasal plate is glass substrate；The back substrate is glass substrate or tree
The substrate of fat material.
Although specifically showing and describing the utility model with reference to preferred embodiment, those skilled in the art should
This is understood, is not departing from the spirit and scope of the present utility model that appended claims are limited, in form and details
On the utility model can be made a variety of changes, be protection domain of the present utility model.
Claims (10)
1. it is disposed with the first i types on a kind of HJT solar cells, including crystalline silicon substrate, the smooth surface of the crystalline silicon substrate
Amorphous silicon film layer, p-type amorphous silicon film layer, transparent conductive oxide film layer and the first metal gate electrode, it is characterised in that：The crystalline substance
The 2nd i types amorphous silicon film layer, n-type amorphous silicon film layer, Metal Substrate conductive laminate and second are disposed with the back side of silicon chip
Metal gate electrode.
2. HJT solar cells according to claim 1, it is characterised in that：The Metal Substrate conductive laminate is three-layered node
Structure or five-layer structure；The three-decker is by the first dielectric membranous layer, the first metallic diaphragm and the second dielectric membranous layer successively heap
It is stacked；The five-layer structure is by the first dielectric membranous layer, the first metallic diaphragm, the 3rd dielectric membranous layer, the second metallic diaphragm
Composition is stacked gradually with the second dielectric membranous layer；First dielectric membranous layer is directly contacted with the n-type amorphous silicon film layer.
3. it is disposed with the first i types on a kind of HJT solar cells, including crystalline silicon substrate, the smooth surface of the crystalline silicon substrate
Amorphous silicon film layer, p-type amorphous silicon film layer, transparent conductive oxide film layer and the first metal gate electrode, it is characterised in that：The crystalline substance
The 2nd i types amorphous silicon film layer, n-type amorphous silicon film layer, n-type microcrystal silicon film layer, Metal Substrate are disposed with the back side of silicon chip
Conductive laminate and the second metal gate electrode.
4. HJT solar cells according to claim 3, it is characterised in that：The Metal Substrate conductive laminate is three-layered node
Structure or five-layer structure；The three-decker is by the first dielectric membranous layer, the first metallic diaphragm and the second dielectric membranous layer successively heap
It is stacked；The five-layer structure is by the first dielectric membranous layer, the first metallic diaphragm, the 3rd dielectric membranous layer, the second metallic diaphragm
Composition is stacked gradually with the second dielectric membranous layer；First dielectric membranous layer is directly contacted with the n-type microcrystal silicon film layer.
5. the HJT solar cells according to claim 2 or 4, it is characterised in that：First dielectric membranous layer and described
Second dielectric membranous layer is AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO film layers, ito film layer, ITIO film layers, IWO
Film layer, ICO film layers, IMO film layers, titanium oxide layer, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film
Layer；First metallic diaphragm and second metallic diaphragm are golden membranous layer, silver film, copper film layer, aluminum membranous layer, chromium film layer, molybdenum
Film layer, niobium film layer, tungsten film layer or nickel film layer；3rd dielectric membranous layer is titanium oxide layer, titanium oxide tin film layer, titanium oxide
Niobium film layer, zinc oxide titanium film layer, zinc oxide film, indium oxide film layer, tin oxide film layer, molybdenum oxide film layer, niobium oxide film layer, oxygen
Change zinc-tin film layer, magnesium zinc film layer, zinc oxide silicon film, ito film layer, ITIO film layers, AZO film layers, IWO film layers, BZO films
Layer, GZO film layers, IZO film layers, IGZO film layers, IMO film layers, ICO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or oxygen
Change tin and mix antimony film layer.
6. the HJT solar cells according to claim 1 or 3, it is characterised in that：The crystalline silicon substrate be monocrystalline silicon piece or
Polysilicon chip.
7. the HJT solar cells according to claim 1 or 3, it is characterised in that：The transparent conductive oxide film layer is
AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO film layers, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO
Film layer, tin oxide fluorine doped film layer, tin oxide mix iodine film layer or tin oxide mixes antimony film layer.
8. the HJT solar cells according to claim 1 or 3, it is characterised in that：First metal gate electrode and/or
Second metal gate electrode is silver-colored gate electrode or copper gate electrode.
9. a kind of HJT solar modules, it is characterised in that：Including the back substrate, the second tack coat, right stacked gradually
It is required that HJT solar cells, the first tack coat and prebasal plate described in 1-8 any one.
10. HJT solar modules according to claim 9, it is characterised in that：The number of the HJT solar cells
Measure to be multiple, the plurality of HJT solar cells be cascaded after through busbar extraction electrode wiring.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110212041A (en) * | 2019-06-17 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | A kind of crystal silicon battery, crystal silicon battery component and solar energy system |
| WO2024164862A1 (en) * | 2023-02-08 | 2024-08-15 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method therefor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212041A (en) * | 2019-06-17 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | A kind of crystal silicon battery, crystal silicon battery component and solar energy system |
| CN110212041B (en) * | 2019-06-17 | 2024-10-01 | 苏州联诺太阳能科技有限公司 | Crystal silicon battery, crystal silicon battery assembly and solar energy system |
| WO2024164862A1 (en) * | 2023-02-08 | 2024-08-15 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method therefor |
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