CN108365024A - A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature - Google Patents
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature Download PDFInfo
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- CN108365024A CN108365024A CN201810198957.XA CN201810198957A CN108365024A CN 108365024 A CN108365024 A CN 108365024A CN 201810198957 A CN201810198957 A CN 201810198957A CN 108365024 A CN108365024 A CN 108365024A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- ZKKMHTVYCRUHLW-UHFFFAOYSA-N 2h-pyran-5-carboxamide Chemical compound NC(=O)C1=COCC=C1 ZKKMHTVYCRUHLW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：The former is made of heavily-doped p-type crystal silicon emitter layer and metal grid lines I successively outward substrate, and the latter penetrates a layer I by highly doped n-type crystalline silicon field passivation layer I and passivated reflection reducing successively outward by substrate and constitutes；Back of the body electric field surface is divided into passivation entering light region and back of the body electric field conductive region：The former is followed successively by heavy doping crystal silicon layer outward by substrate, passivated reflection reducing penetrates a layer II；The latter is followed successively by highly doped n-type crystalline silicon, metal grid lines II by substrate outward, the two region cross-distributions and is not overlapped.The present invention obtains more high open circuit voltage and short circuit current under the premise of keeping crystal-silicon solar cell two-sided into light characteristic, improves the generating capacity of crystal-silicon solar cell to the greatest extent.
Description
Technical field
The invention belongs to solar cell field and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For two-sided crystal-silicon solar cell, PERT structures are because it is compatible with the crystalline silicon producing line of existing diffusion
Property is good, and efficiency is relatively high to be constantly subjected to paying close attention in solar cell industry.But the development of the solar cell of the structure is current
Bottleneck is encountered, key one of which is the performance and its technology of preparing for the emitter layer that boron diffuses to form.In order to reach
Higher open-circuit voltage boron doping concentration has to height, but this can bring the increase of Carrier recombination again.And in boron-dopped layer
The required low square resistance of lateral transport losses of carrier and reach the required raising boron doping concentration of this condition（It can cause
The increase of recombination loss）Technological improvement direction be conflicting.
It is most important to the development of PERT technologies that how this contradiction is solved, it is believed that is entered from the design of device architecture
Hand may be an effective breach.The present invention is that in this direction one has tried to.
Invention content
The purpose of the present invention is to propose to a kind of silicon substrate homojunction double-side solar cell structures with local emitter feature.
The present invention is achieved by the following technical solutions.
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature of the present invention, with N-shaped
Crystal silicon chip（5）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conduction
Region is by substrate outward successively by heavily-doped p-type crystal silicon emitter layer（2）With metal grid lines I（1）It constitutes, passivation-entering light area
Domain is by substrate outward successively by highly doped n-type crystalline silicon field passivation layer I（4）A layer I is penetrated with passivated reflection reducing（3）It constitutes.The two areas
It domain cross-distribution and is not overlapped.
Passivated reflection reducing of the present invention penetrates a layer I（3）It is preferred that silicon nitride.
Emitter of the present invention and highly doped n-type crystalline silicon field passivation layer I（4）Between preferably carry out insulation processing.
Further, it is the performance of raising device, the highly doped n-type crystalline silicon field passivation layer I（4）Thickness it is preferred
1-300nm。
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature of the present invention is two-sided
Entering light solar cell, positive and negative electrode are located at N-shaped crystal silicon chip（5）Two surfaces of substrate are two-sided entering light sun electricity
Pond.Solar cell is emitting the other one side except pole-face（Carry on the back electric field surface）Structure be divided into passivation-entering light region and the back of the body electric field-
Conductive region：Passivation-entering light region is followed successively by heavy doping crystalline silicon field passivation layer by substrate outward（6）, passivated reflection reducing penetrate a layer II
（7）；Back of the body electric field-conductive region is followed successively by highly doped n-type crystal silicon layer by substrate outward（8）, metal grid lines II（9）.The two
It region cross-distribution and is not overlapped.
Wherein, the heavy doping crystalline silicon field passivation layer（6）The preferred 1-100nm of thickness, doping type preferred p-type；
The passivated reflection reducing penetrates a layer II（7）It is preferred that aluminium oxide+silicon nitride laminated film.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（5）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
The matte of tower structure, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：The present invention is suitable for monocrystalline silicon piece solar cell, polysilicon chip solar cell and quasi- list
Crystal silicon chip solar cell.Keep crystal-silicon solar cell it is two-sided into light characteristic under the premise of, obtain more high open circuit voltage and
Short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is by metal grid lines area coverage
Under p-type heavy doping crystal silicon emitter and supporting structure obtain high open-circuit voltage because this structure can only consider emitter
Electric property and without also to be balanced such as emitter layer in PERT structures extinction be lost degree；In not metal grid lines
Place is heavily doped compared to the full surfaces PERT using the structure of highly doped n-type crystalline silicon field passivation layer mating surface antireflective passivation layer
The structure of miscellaneous p-type layer combination passivation layer can reduce short circuit current caused by the recombination loss of carrier and open-circuit voltage declines.
Emit pole-face, the photohole of generation enters inside body silicon under the promotion for the built in field that highly doped n-type layer is formed, then collects
In flow to emitter region, form the high current effect of similar concentrator solar cell, can further improve the interior of solar cell
Potential is built, to further increase the voltage of solar cell；And the electronics generated is not because the highly doped n-type region of transmitting pole-face has
There is electrode, the metal electrode that can only flow to the other one side of silicon chip is collected.
Description of the drawings
Attached drawing 1 is the schematic diagram of structure of the invention.Wherein：1 is metal grid lines I；2 attach most importance to doped p-type crystalline silicon emitter
Layer；3 penetrate a layer I for passivated reflection reducing；4 be highly doped n-type crystalline silicon field passivation layer I；5 be N-shaped crystal silicon chip；6 attach most importance to doped crystal
Silicon field passivation layer；7 penetrate a layer II for passivated reflection reducing；8 be highly doped n-type crystal silicon layer；9 be metal grid lines II.
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature as shown in Fig. 1.N-shaped is brilliant
Passivated reflection reducing penetrates layer I 3 and passivated reflection reducing penetrates the region of layer II 7 to be all made of average-size be 3 microns having on the surface of body silicon chip 5
Pyramid suede structure, adopted having heavily-doped p-type crystal silicon emitter layer 2 and 6 region of heavy doping crystalline silicon field passivation layer
With chemically polishing surface structure（Without making herbs into wool）.Passivation layer I 4 thickness in highly doped n-type crystalline silicon field is 300nm；Heavy doping crystalline silicon
Field passivation layer 6 is adulterated using p-type, thickness 5nm；It is aluminium oxide+silicon nitride laminated film that passivated reflection reducing, which penetrates layer II 7,.Metal gate
Line I 1 and metal grid lines II 9 is the clad metal electrode of nickel copper/silver according to this since silicon chip surface, occupies silicon chip surface product
2%.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Embodiment 2.
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature as shown in Fig. 1.N-shaped is brilliant
Passivated reflection reducing penetrates layer I 3 and passivated reflection reducing penetrates the region of layer II 7 to be all made of average-size be 1 micron having on the surface of body silicon chip 5
Pyramid suede structure, adopted having heavily-doped p-type crystal silicon emitter layer 2 and 6 region of heavy doping crystalline silicon field passivation layer
With chemically polishing surface structure（Without making herbs into wool）.Passivation layer I 4 thickness in highly doped n-type crystalline silicon field is 10nm；Heavy doping crystalline silicon
Field passivation layer 6 is adulterated using p-type, thickness 50nm；It is silica+silicon nitride laminated film that passivated reflection reducing, which penetrates layer II 7,.Metal
9 fine silver structure of grid line I 1 and metal grid lines II occupies the 3% of silicon chip surface product.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Embodiment 3.
A kind of silicon substrate homojunction double-side solar cell structure with local emitter feature as shown in Fig. 1.N-shaped is brilliant
The pyramid suede structure that the surface of body silicon chip 5 is 2 microns.Passivation layer I 4 thickness in highly doped n-type crystalline silicon field is 10nm；Weight
Doped crystalline silicon field passivation layer 6 is adulterated using p-type, thickness 10nm；It is that silica+silicon nitride is compound that passivated reflection reducing, which penetrates layer II 7,
Film.9 fine silver structure of metal grid lines I 1 and metal grid lines II occupies the 1% of silicon chip surface product.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Claims (11)
1. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature, it is characterized in that with N-shaped crystalline silicon
Piece（5）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region by
Substrate is outward successively by heavily-doped p-type crystal silicon emitter layer（2）With metal grid lines I（1）It constitutes, passivation-entering light region is by base
Bottom is outward successively by highly doped n-type crystalline silicon field passivation layer I（4）A layer I is penetrated with passivated reflection reducing（3）It constitutes, the two regions intersect
It is distributed and is not overlapped；
It is carried on the back electric field surface and is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region by substrate outward successively
Doped crystalline silicon of attaching most importance to field passivation layer（6）, passivated reflection reducing penetrate a layer II（7）；Back of the body electric field-conductive region is attached most importance to successively outward by substrate
Adulterate N-shaped crystal silicon layer（8）, metal grid lines II（9）, the two region cross-distributions and it is not overlapped.
2. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the passivated reflection reducing penetrates a layer I（3）For silicon nitride.
3. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the emitter and highly doped n-type crystalline silicon field passivation layer I（4）Between carry out insulation processing.
4. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the highly doped n-type crystalline silicon field passivation layer I（4）Thickness be 1-300nm.
5. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the heavy doping crystalline silicon field passivation layer（6）Thickness be 1-100nm.
6. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the heavy doping crystalline silicon field passivation layer（6）Doping type is p-type.
7. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the passivated reflection reducing penetrates a layer II（7）For aluminium oxide+silicon nitride laminated film.
8. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the N-shaped crystal silicon chip（5）For two-sided making herbs into wool.
9. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation：Use the matte of small size pyramid structure on one side, in addition one
Face is using large-sized pyramid matte or without pyramidal polishing structure.
10. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that there is metal grid lines region to polish or do the pyramidal matte of large scale.
11. a kind of silicon substrate homojunction double-side solar cell structure with local emitter feature according to claim 1,
It is characterized in that the total area coverage ratio of device surface metal grid lines is 1 ~ 3%.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
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- 2018-03-12 CN CN201810198957.XA patent/CN108365024A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
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Application publication date: 20180803 |