CN108346706A - A kind of local emitter homojunction crystal silicon double-side solar cell structure - Google Patents
A kind of local emitter homojunction crystal silicon double-side solar cell structure Download PDFInfo
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- CN108346706A CN108346706A CN201810198947.6A CN201810198947A CN108346706A CN 108346706 A CN108346706 A CN 108346706A CN 201810198947 A CN201810198947 A CN 201810198947A CN 108346706 A CN108346706 A CN 108346706A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
A kind of local emitter homojunction crystal silicon double-side solar cell structure, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：The former is made of heavily-doped p-type crystal silicon emitter layer and metal grid lines I successively outward substrate, and the latter penetrates a layer I by highly doped n-type crystalline silicon field passivation layer I and passivated reflection reducing successively outward by substrate and constitutes；Back of the body electric field surface is divided into passivation entering light region and back of the body electric field conductive region：The former is followed successively by highly doped n-type crystal silicon layer II by substrate outward, passivated reflection reducing penetrates a layer II；The latter is followed successively by highly doped n-type crystal silicon layer II, metal grid lines II by substrate outward.The present invention obtains more high open circuit voltage and short circuit current under the premise of keeping crystal-silicon solar cell two-sided into light characteristic, improves the generating capacity of crystal-silicon solar cell to the greatest extent.
Description
Technical field
The invention belongs to solar cell field and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For two-sided crystal-silicon solar cell, PERT structures are because it is compatible with the crystalline silicon producing line of existing diffusion
Property is good, and efficiency is relatively high to be constantly subjected to paying close attention in solar cell industry.But the development of the solar cell of the structure is current
Bottleneck is encountered, key one of which is the performance and its technology of preparing for the emitter layer that boron diffuses to form.In order to reach
Higher open-circuit voltage boron doping concentration has to height, but this can bring the increase of Carrier recombination again.And in boron-dopped layer
The required low square resistance of lateral transport losses of carrier and reach the required raising boron doping concentration of this condition（It can cause
The increase of recombination loss）Technological improvement direction be conflicting.
It is most important to the development of PERT technologies that how this contradiction is solved, it is believed that is entered from the design of device architecture
Hand may be an effective breach.The present invention is that in this direction one has tried to.
Invention content
The purpose of the present invention is to propose to a kind of local emitter homojunction crystal silicon double-side solar cell structures.
The present invention is achieved by the following technical solutions.
A kind of local emitter homojunction crystal silicon double-side solar cell structure of the present invention, with N-shaped crystal silicon chip
（5）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region is by base
Bottom is outward successively by heavily-doped p-type crystal silicon emitter layer（2）With metal grid lines I（1）It constitutes, passivation-entering light region is by substrate
Outward successively by highly doped n-type crystalline silicon field passivation layer I（4）A layer I is penetrated with passivated reflection reducing（3）It constitutes.The two regions, which intersect, to be divided
It cloth and is not overlapped.
Passivated reflection reducing of the present invention penetrates a layer I（3）It is preferred that silicon nitride.
Emitter of the present invention and highly doped n-type crystalline silicon field passivation layer I（4）Between preferably carry out insulation processing.
Further, it is the performance of raising device, the highly doped n-type crystalline silicon field passivation layer I（4）Thickness it is preferred
1-300nm。
A kind of local emitter homojunction crystal silicon double-side solar cell structure of the present invention is the two-sided entering light sun
Battery, positive and negative electrode are located at N-shaped crystal silicon chip（5）Two surfaces of substrate are two-sided entering light solar cell.Sun electricity
Pond is emitting the other one side except pole-face（Carry on the back electric field surface）For with lower structure：It is divided into passivation-entering light region and back of the body electric field-conduction
Region：Passivation-entering light region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（6）, passivated reflection reducing penetrate a layer II（7）；The back of the body
Electric field-conductive region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（6）, metal grid lines II（8）.The two regions
It cross-distribution and is not overlapped.
Wherein, passivated reflection reducing penetrates a layer II（7）It is preferred that silicon nitride.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（5）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
Tower structure matte, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：The present invention is suitable for monocrystalline silicon piece solar cell, polysilicon chip solar cell and quasi- list
Crystal silicon chip solar cell.Keep crystal-silicon solar cell it is two-sided into light characteristic under the premise of, obtain more high open circuit voltage and
Short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is by metal grid lines area coverage
Under p-type heavy doping crystal silicon emitter and supporting structure obtain high open-circuit voltage because this structure can only consider emitter
Electric property and without also to be balanced such as emitter layer in PERT structures extinction be lost degree；In not metal grid lines
Place is heavily doped compared to the full surfaces PERT using the structure of highly doped n-type crystalline silicon field passivation layer mating surface antireflective passivation layer
The structure of miscellaneous p-type layer combination passivation layer can reduce short circuit current caused by the recombination loss of carrier and open-circuit voltage declines.
Emit pole-face, the photohole of generation enters inside body silicon under the promotion for the built in field that highly doped n-type layer is formed, then collects
In flow to emitter region, form the high current effect of similar concentrator solar cell, can further improve the interior of solar cell
Potential is built, to further increase the voltage of solar cell；And the electronics generated is not because the highly doped n-type region of transmitting pole-face has
There is electrode, the metal electrode that can only flow to the other one side of silicon chip is collected.
Description of the drawings
Attached drawing 1 is the schematic diagram of the present invention.Wherein：1 is metal grid lines I；2 attach most importance to doped p-type crystalline silicon layer；3 be passivation
Antireflection layer I；4 be highly doped n-type crystalline silicon field passivation layer I；5 be N-shaped crystal silicon chip；6 be highly doped n-type crystal silicon layer II；7
A layer II is penetrated for passivated reflection reducing；8 be metal grid lines II.
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
A kind of local emitter homojunction crystal silicon double-side solar cell structure as shown in Fig. 1.N-shaped crystal silicon chip 5
The two-sided pyramid structure matte for being all made of average ~ 2 microns, the thickness of highly doped n-type crystalline silicon field passivation layer I 4 is
6 thickness of 10nm, highly doped n-type crystal silicon layer II is 200nm, and passivated reflection reducing penetrates layer I 3 and passivated reflection reducing is penetrated layer II 7 and is all made of
Silicon nitride film, metal grid lines I 1 and metal grid lines II 8 are all made of the Ag grid line structures of primary and secondary gratings cooperation, and masked area is silicon
The 3% of piece surface area.The structure is two-sided very excellent into light characteristic, i.e., any one side can be used as main into smooth surface.It is such as used as single
Face entering light solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase and be used as single side entering light solar cell
Short circuit current.It is preferred that emit pole-face as main side to light.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Embodiment 2.
A kind of local emitter homojunction crystal silicon double-side solar cell structure as shown in Fig. 1.N-shaped crystal silicon chip 5
The two-sided pyramid structure matte for being all made of average ~ 3 microns, the thickness of highly doped n-type crystalline silicon field passivation layer I 4 is
6 thickness of 10nm, highly doped n-type crystal silicon layer II is 300nm, and passivated reflection reducing penetrates layer I 3 and passivated reflection reducing is penetrated layer II 7 and is all made of
Silicon nitride film, metal grid lines I 1 and metal grid lines II 8 are all made of Ni/Cu/Ag grid line structures (the silicon chip table of primary and secondary gratings cooperation
It is Ni that face, which is in direct contact), masked area is the 1% of silicon chip surface product.The structure is two-sided very excellent into light characteristic, that is, appoints
What one side can be used as main into smooth surface.It is such as used as single side entering light solar cell, then can plate one layer of metal conduct in shady face
Reflective layer increases the short circuit current as single side entering light solar cell.It is preferred that emit pole-face as main side to light.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Claims (9)
1. a kind of local emitter homojunction crystal silicon double-side solar cell structure, it is characterized in that with N-shaped crystal silicon chip（5）As
Substrate, transmitting pole-face are divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region by substrate outward according to
It is secondary by heavily-doped p-type crystal silicon emitter layer（2）With metal grid lines I（1）Constitute, passivation-entering light region by substrate outward successively
By highly doped n-type crystalline silicon field passivation layer I（4）A layer I is penetrated with passivated reflection reducing（3）It constitutes, the two region cross-distributions and does not weigh
It is folded；
It is carried on the back electric field surface structure and is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region is outside by substrate
It is followed successively by highly doped n-type crystal silicon layer II（6）, passivated reflection reducing penetrate a layer II（7）；Electric field-conductive region is carried on the back by substrate outward successively
For highly doped n-type crystal silicon layer II（6）, metal grid lines II（8）, the two region cross-distributions and it is not overlapped.
2. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The passivated reflection reducing penetrates a layer I（3）For silicon nitride.
3. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The emitter and highly doped n-type crystalline silicon field passivation layer I（4）Between carry out insulation processing.
4. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The highly doped n-type crystalline silicon field passivation layer I（4）Thickness be 1-300nm.
5. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The passivated reflection reducing penetrates a layer II（7）For silicon nitride.
6. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The N-shaped crystal silicon chip（5）For two-sided making herbs into wool.
7. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation：The matte of small size pyramid structure is used on one side, in addition one side
Using large-sized pyramid matte or without pyramidal polishing structure.
8. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
There is metal grid lines region to polish or do the pyramidal matte of large scale.
9. a kind of local emitter homojunction crystal silicon double-side solar cell structure according to claim 1, it is characterized in that
The total area coverage ratio of device surface metal grid lines is 1 ~ 3%.
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| CN201810198947.6A CN108346706A (en) | 2018-03-12 | 2018-03-12 | A kind of local emitter homojunction crystal silicon double-side solar cell structure |
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| CN201810198947.6A CN108346706A (en) | 2018-03-12 | 2018-03-12 | A kind of local emitter homojunction crystal silicon double-side solar cell structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN102437243A (en) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
-
2018
- 2018-03-12 CN CN201810198947.6A patent/CN108346706A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN102437243A (en) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN205452299U (en) * | 2015-12-31 | 2016-08-10 | 广东爱康太阳能科技有限公司 | Back of body passivation crystalline silicon solar cells |
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