CN108336178A - A kind of silicon/crystalline silicon heterojunction double-side solar cell structure - Google Patents
A kind of silicon/crystalline silicon heterojunction double-side solar cell structure Download PDFInfo
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- CN108336178A CN108336178A CN201810198908.6A CN201810198908A CN108336178A CN 108336178 A CN108336178 A CN 108336178A CN 201810198908 A CN201810198908 A CN 201810198908A CN 108336178 A CN108336178 A CN 108336178A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of silicon/crystalline silicon heterojunction double-side solar cell structure, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：The former is made of intrinsic amorphous silicon passivation layer, heavily-doped p-type amorphous silicon layer, metal grid lines I, and the latter is penetrated a layer I and constituted by heavily-doped p-type crystalline silicon field passivation layer I, passivated reflection reducing；Back of the body electric field surface is divided into passivation entering light region and back of the body electric field conductive region：The former is penetrated a layer II and is constituted by highly doped n-type crystal silicon layer II, passivated reflection reducing；The latter is made of highly doped n-type crystal silicon layer II, metal grid lines II.The present invention maintains characteristic that is two-sided into light characteristic, while obtaining high open circuit voltage and high short circuit current, improves the generating capacity of crystal-silicon solar cell.The use of valuable transparent conductive oxide is avoided completely compared to HIT and HAC D structures, while being reduced carrier and being transmitted caused series resistance losses on TCO.
Description
Technical field
The invention belongs to solar cells and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For ground solar cell, the structure actual power generation of two-sided entering light is higher than the single side entering light of same nominal power
The understanding of solar cell is generally received by industry.The two-sided entering light solar cell of mainstream is with N-shaped crystal silicon chip at present
For substrate.One is the n-PERT structures based on pn homogeneity junction structures, feature is that short circuit current is big, and open-circuit voltage is low；It is another
Class is so that based on pn heterojunction structures, using HIT structures as representative, feature is that short circuit current is small, and open-circuit voltage is high.How to improve
The former open-circuit voltage and the short circuit current for improving the latter are always difficult point in the industry, and the direction made great efforts.As can in conjunction with two
The characteristics of person, invents a kind of new structure, while the advantages of obtain high short circuit current, high open circuit voltage, is expected to further increase
The performance of two-sided crystal-silicon solar cell.The pervious invention of University Of Nanchang is in the progress that this side up（Middle promulgated by the State Council
Bright patent, No. 201510776929.8）, structure is known as HAC-D structures, means that the structure combines HAC
（heterojunction of amorphous silicon and crystalline silicon）Hetero-junctions and diffusion are standby
Homojunction (Diffused homojunction of crystalline silicon)）.It can get compared to HIT structures
Higher short circuit current, and the characteristics of certifiable HIT structure high open circuit voltages.But the structure still makes progress space, and the present invention is just
It is to be further improved to HAC-D structures.Compared to the electric current and open circuit electricity that HAC-D structures can further improve solar cell
Pressure reduces series resistance, and reduces valuable transparent conductive oxide（TCO）Dosage.
Invention content
The main object of the present invention is to propose a kind of silicon/crystalline silicon heterojunction double-side solar cell structure, short in conjunction with pn homojunction height
The advantages of road electric current and pn hetero-junctions high open circuit voltages, reasonable disposition device is constituted, to further increase the two-sided sun of crystalline silicon
The generating efficiency of battery reduces the consumption of valuable raw material.
The present invention is achieved by the following technical solutions.
A kind of silicon/crystalline silicon heterojunction double-side solar cell structure of the present invention, with N-shaped crystal silicon chip（6）As substrate,
It emits pole-face and is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region by substrate outward successively by
Intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）It constitutes, passivation-entering light region is by substrate
Outward successively by heavily-doped p-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）It constitutes.The two region cross-distributions
And it is not overlapped.
To improve metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between contact electric conductivity, preferably the two it
Between be inserted into a transition tco layer.
Passivated reflection reducing of the present invention penetrates a layer I（4）It is preferred that silicon nitride.
Emitter of the present invention and heavily-doped p-type crystalline silicon field passivation layer I（5）Between preferably carry out insulation processing.
Further, it is the performance of raising device, the heavily-doped p-type crystalline silicon field passivation layer I（5）Thickness it is preferred
1-300nm。
A kind of back of the body electric field surface structure of silicon/crystalline silicon heterojunction double-side solar cell structure of the present invention：Be divided into passivation-into
Light region and back of the body electric field-conductive region：Passivation-entering light region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（7）、
Passivated reflection reducing penetrates a layer II（8）；Back of the body electric field-conductive region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（7）, metal
Grid line II（9）.It the two region cross-distributions and is not overlapped.
Wherein, passivated reflection reducing penetrates a layer II（8）It is preferred that silicon nitride.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（6）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（6）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
The matte of tower structure, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：Under the premise of keeping the characteristic of the two-sided entering light of crystal-silicon solar cell, while obtaining height
The characteristic of open-circuit voltage and high short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is logical
The amorphous silicon emitter and supporting structure crossed under metal grid lines area coverage obtain high open-circuit voltage, in not metal grid lines
Place is using the structure of heavily-doped p-type crystalline silicon mating surface antireflective passivation layer compared to conventional non-crystalline silicon/silicon/crystalline silicon heterogenous
Connection solar cell can reduce shading loss, the sunlight of more incidences is efficiently translated into photo-generated carrier, and can reduce photoproduction
Lateral transport recombination loss of the carrier in silicon chip surface region.In transmitting pole-face, the photohole of generation is in highly doped n-type layer
Enter inside body silicon under the promotion of the built in field of formation, then concentrate and flow to emitter region, forms the similar optically focused sun
The high current effect of battery, can further improve the Built-in potential of solar cell, to further increase the voltage of solar cell；
And the electronics generated can only flow to the metal electricity of the other one side of silicon chip because the highly doped n-type region of transmitting pole-face does not have electrode
Pole is collected.In addition, the present invention can completely avoid valuable electrically conducting transparent oxygen compared to HIT structures and HAC-D structures
The use of compound, while carrier can be decreased and transmit caused series resistance losses on TCO.
Description of the drawings
Attached Fig. 1 the structural representation of present invention.Wherein：1 is metal grid lines I；2 be heavily-doped p-type amorphous silicon layer；3 be this
Levy amorphous silicon passivation layer；4 penetrate a layer I for passivated reflection reducing；5 attach most importance to doped p-type crystalline silicon field passivation layer I；6 be N-shaped crystal silicon chip；7
For highly doped n-type crystal silicon layer II；8 penetrate a layer II for passivated reflection reducing；9 be metal grid lines II.
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
A kind of silicon/crystalline silicon heterojunction double-side solar cell structure as shown in Fig. 1.The two-sided of N-shaped crystal silicon chip 6 is all made of
The thickness of average ~ 2 microns of pyramid structure matte, heavily-doped p-type crystalline silicon field passivation layer I 5 is 10nm, and highly doped n-type is brilliant
7 thickness of body silicon layer II is 200nm, and passivated reflection reducing penetrates layer I 4 and passivated reflection reducing penetrates layer II 8 and is all made of silicon nitride film, metal
Grid line I 1 and metal grid lines II 9 is all made of the Ag grid line structures of primary and secondary gratings cooperation, and masked area is the 3% of silicon chip surface product.It should
Structure is two-sided very excellent into light characteristic, i.e., any one side can be used as main into smooth surface.Such as it is used as single side entering light solar cell
It uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit current as single side entering light solar cell.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Embodiment 2.
A kind of crystal-silicon solar cell of two-sided HAC-D structures as shown in Fig. 1.The two-sided of N-shaped crystal silicon chip 6 is adopted
Thickness with average ~ 1 micron of pyramid structure matte, heavily-doped p-type crystalline silicon field passivation layer I 5 is 100nm, heavy doping n
7 thickness of type crystal silicon layer II is 300nm, and passivated reflection reducing penetrates layer I 4 and passivated reflection reducing penetrates layer II 8 and is all made of silica
（10nm）/ silicon nitride（80nm）Laminated film, metal grid lines I 1 and metal grid lines II 9 are all made of the Ag grid lines of primary and secondary gratings cooperation
Structure, masked area are the 3% of silicon chip surface product.The structure is two-sided very excellent into light characteristic, i.e., any one side can be used as
It leads into smooth surface.It is such as used as single side entering light solar cell, then can plate one layer of metal as reflective layer in shady face, increase conduct
The short circuit current of single side entering light sun solar cell.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Embodiment 3.
A kind of crystal-silicon solar cell of two-sided HAC-D structures as shown in Fig. 1.The two-sided of N-shaped crystal silicon chip 6 is adopted
With average ~ 1 micron of pyramid structure matte, but chemical polishing structure is used in the region that metal grid lines cover.Heavily-doped p-type
The thickness of crystalline silicon field passivation layer I 5 is 50nm, and 7 thickness of highly doped n-type crystal silicon layer II is 150nm, and passivated reflection reducing penetrates a layer I
4 and passivated reflection reducing penetrate layer II 8 and be all made of aluminium oxide（20nm）/ silicon nitride（80nm）Laminated film, metal grid lines I 1 and metal
Grid line II 9 is all made of the Ag grid line structures of primary and secondary gratings cooperation, and masked area is the 1.5% of silicon chip surface product.The structure it is two-sided into
Light characteristic is very excellent, i.e., any one side can be used as main into smooth surface.Such as used as single side entering light solar cell, then it can be
Shady face plates one layer of metal as reflective layer, increases the short circuit current as single side entering light sun solar cell.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Embodiment 4.
A kind of crystal-silicon solar cell of two-sided HAC-D structures as shown in Fig. 1.The two-sided of N-shaped crystal silicon chip 6 is adopted
Thickness with average ~ 2 microns of pyramid structure matte, heavily-doped p-type crystalline silicon field passivation layer I 5 is 10nm, highly doped n-type
7 thickness of crystal silicon layer II is 200nm, and passivated reflection reducing penetrates layer I 4 and passivated reflection reducing penetrates layer II 8 and is all made of silicon nitride film, gold
Belong to the Ag grid line structures that grid line I 1 and metal grid lines II 9 is all made of primary and secondary gratings cooperation, masked area is the 3% of silicon chip surface product.
There is the ITO of one layer of 10nm between metal grid lines I1 and heavily-doped p-type amorphous silicon layer 2.The structure it is two-sided into light characteristic very
Excellent, i.e., any one side can be used as main into smooth surface.It is such as used as single side entering light solar cell, then can plate one layer in shady face
Metal increases the short circuit current as single side entering light sun solar cell as reflective layer.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Claims (10)
1. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure, it is characterized in that with N-shaped crystal silicon chip（6）As substrate, transmitting
Pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region is by substrate outward successively by intrinsic non-
Crystal silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）Constitute, passivation-entering light region by substrate outward according to
It is secondary by heavily-doped p-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）It constitutes, the two region cross-distributions and does not weigh
It is folded；
It carries on the back electric field surface structure：It is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region is outside by substrate
It is followed successively by highly doped n-type crystal silicon layer II（7）, passivated reflection reducing penetrate a layer II（8）；Electric field-conductive region is carried on the back by substrate outward successively
For highly doped n-type crystal silicon layer II（7）, metal grid lines II（9）, the two region cross-distributions and it is not overlapped.
2. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that metal grid lines I（1）
With heavily-doped p-type amorphous silicon layer（2）Between be inserted into a transition tco layer.
3. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that the passivation subtracts
Reflecting layer I（4）For silicon nitride.
4. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that the emitter
With heavily-doped p-type crystalline silicon field passivation layer I（5）Between carry out insulation processing.
5. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that the heavy doping p
Type crystalline silicon field passivation layer I（5）Thickness be 1-300nm.
6. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that the passivation subtracts
Reflecting layer II（8）For silicon nitride.
7. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that the N-shaped crystal
Silicon chip（6）For two-sided making herbs into wool.
8. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that N-shaped crystal silicon chip
（6）Two-sided making herbs into wool situation：The matte of small size pyramid structure is used on one side, and in addition one side uses large-sized pyramid
Matte or without pyramidal polishing structure.
9. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that there is metal grid lines area
Domain polishes or does the pyramidal matte of large scale.
10. a kind of silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that device surface metal
The total area coverage ratio of grid line is preferably 1 ~ 3%.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
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| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
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2018
- 2018-03-12 CN CN201810198908.6A patent/CN108336178A/en active Pending
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| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
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| CN102437243A (en) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
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| CN105810771A (en) * | 2016-05-12 | 2016-07-27 | 南昌大学 | Back crystal silicon heterojunction two-sided solar cell and preparation method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
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