CN116581169A - Heterojunction solar cell and preparation method thereof - Google Patents

Heterojunction solar cell and preparation method thereof Download PDF

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Publication number
CN116581169A
CN116581169A CN202310593656.8A CN202310593656A CN116581169A CN 116581169 A CN116581169 A CN 116581169A CN 202310593656 A CN202310593656 A CN 202310593656A CN 116581169 A CN116581169 A CN 116581169A
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Prior art keywords
partition
heterojunction
partitions
solar cell
transparent conductive
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Inventor
高纪凡
殷志豪
杨庆贺
段誉
杨广涛
陈达明
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Trina Solar Changzhou Technology Co ltd
Trina Solar Co Ltd
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Trina Solar Changzhou Technology Co ltd
Trina Solar Co Ltd
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Priority to CN202310593656.8A priority Critical patent/CN116581169A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table

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Abstract

In the heterojunction solar cell, a transparent conductive layer on at least one side of a heterojunction unit is arranged to be of a partition structure, the transparent conductive layer comprises first partitions and second partitions which are arranged at intervals and is electrically connected with an electrode grid line through the second partitions, the square resistance of the first partitions is larger than that of the second partitions, and two adjacent first partitions and the second partitions are electrically connected. With the heterojunction solar cell of this embodiment, since the square resistances of the first and second partitions are different, the conductivity of the heterojunction solar cell is different, the first partition with high square resistance can be used to conduct photo-generated carriers to the second partition with low square resistance through electrical connection, the second partition with low square resistance can be used to conduct the carriers to the corresponding electrode grid line again through electrical connection, the second partition plays a role of bus of the auxiliary grid, and the electrode grid line plays a role of the main grid. The heterojunction solar cell can achieve the purpose of saving electrode grid line slurry by not arranging the auxiliary grid.

Description

Heterojunction solar cell and preparation method thereof
Technical Field
The disclosure relates to the technical field of solar cells, in particular to a heterojunction solar cell and a preparation method thereof.
Background
Heterojunction (Heterojunction with intrinsic Thin layer, HJT) solar cells are currently receiving more and more attention in the industry, the heterojunction cell structure is usually centered on a silicon substrate, and a layer of intrinsic amorphous silicon film is deposited between doped amorphous silicon on two sides of the silicon substrate and the silicon substrate.
The heterojunction solar cell structure is suitable for flaking production, and how to reduce the production cost of the heterojunction solar cell is a hot spot of research in the industry.
Disclosure of Invention
In view of the above drawbacks of the related art, an object of the present disclosure is to provide a heterojunction solar cell and a method for manufacturing the same, so as to solve the technical problem of high production cost of the heterojunction solar cell in the related art.
A first aspect of the present disclosure provides a solar cell, comprising:
a heterojunction unit;
transparent conductive layers on the front and back of the heterojunction unit;
the electrode grid line is positioned at one side of the transparent conductive layer, which is away from the heterojunction unit, and is electrically connected with the transparent conductive layer;
the transparent conducting layer on at least one side of the heterojunction unit is arranged to be of a partition structure, the partition structure comprises first partitions and second partitions which are distributed at intervals and are electrically connected with the electrode grid line through the second partitions, the square resistance of each first partition is larger than that of each second partition, and two adjacent first partitions and two adjacent second partitions are electrically connected.
Optionally, the partition structure includes a plurality of first partitions and second partitions arranged at intervals along a first straight line direction.
Optionally, a plurality of electrode grid lines arranged along the second linear direction are arranged on one side of the heterojunction unit, on which the partition structure is arranged, and extend along the first linear direction; the first straight line direction is perpendicular to the second straight line direction.
Optionally, on one side of the heterojunction unit where the partition structure is arranged, the electrode grid line is further electrically connected with the second partition.
Optionally, the second region is of a different material than the first region, and the second region is of a material that is more conductive than the first region.
Optionally, at least one of the width and thickness of the second section is greater than the first section.
Optionally, the electrical connection between adjacent two first and second partitions is a contact connection.
Optionally, the heterojunction cell comprises:
a silicon substrate;
the first intrinsic amorphous silicon layer is arranged between the first doped amorphous silicon layer and the front surface of the silicon substrate, and the doping types of the silicon substrate and the first doped amorphous silicon layer are the same;
the second doped amorphous silicon layer and the second intrinsic amorphous silicon layer are arranged between the back surface of the silicon substrate and the second doped amorphous silicon layer, and the doping types of the silicon substrate and the second doped amorphous silicon layer are opposite.
The embodiment of the disclosure also provides a method for preparing a solar cell, which comprises the following steps:
forming a heterojunction unit;
transparent conductive layers are formed on the front surface and the back surface of the heterojunction unit, the transparent conductive layer on at least one side of the heterojunction unit is arranged into a partition structure, the partition structure comprises a first partition and a second partition which are arranged at intervals, the square resistance of the first partition is larger than that of the second partition, and two adjacent first partitions and the second partitions are electrically connected;
and forming an electrode grid line on one side of each transparent conductive layer, which is far away from the heterojunction unit, wherein the electrode grid line is electrically connected with the transparent conductive layers, and the transparent conductive layers provided with the partition structures are electrically connected with the electrode grid line through the second partitions.
As described above, in the heterojunction solar cell and the method for manufacturing the same provided in the embodiments of the present disclosure, the transparent conductive layer on at least one side of the heterojunction unit is set to be a partition structure, the partition structure includes first partitions and second partitions arranged at intervals and is electrically connected to the electrode grid line through the second partitions, the sheet resistance of the first partition is greater than the sheet resistance of the second partition, and two adjacent first partitions and second partitions are electrically connected. With the heterojunction solar cell of the embodiment, the first and second partitions have different sheet resistances, so that the first partition with high sheet resistance can be used for conducting photo-generated carriers to the second partition with low sheet resistance through electrical connection, the second partition with low sheet resistance can be used for conducting the carriers to the corresponding electrode grid line again through electrical connection, and the second partition has a bus effect and can bear the auxiliary grid function in the related art. In this case, the electrode grid line is used as the main grid, and the heterojunction solar cell can achieve the purpose of saving electrode grid line slurry by not arranging the auxiliary grid, so that the manufacturing cost of the heterojunction solar cell is reduced.
Drawings
Fig. 1 is a top view of a heterojunction solar cell provided by an embodiment of the disclosure;
FIG. 2 is a cross-sectional view of the heterojunction solar cell of FIG. 1 along the AA' direction;
fig. 3 is a cross-sectional view of the heterojunction solar cell shown in fig. 1 along the BB' direction.
Fig. 4 shows a flow chart of a method of fabricating a heterojunction solar cell in accordance with an embodiment of the disclosure.
Detailed Description
Other advantages and effects of the present disclosure will be readily apparent to those skilled in the art from the following description of the embodiments of the disclosure by means of specific examples. The disclosure may be practiced or carried out in other embodiments or applications, and details of the disclosure may be modified or changed from various points of view and applications without departing from the spirit of the disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other.
The embodiments of the present disclosure will be described in detail below with reference to the attached drawings so that those skilled in the art to which the present disclosure pertains can easily implement the same. The present disclosure may be embodied in many different forms and is not limited to the embodiments described herein.
In the description of the present disclosure, references to the terms "one embodiment," "some embodiments," "examples," "particular examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples, as well as features of various embodiments or examples, presented in this disclosure may be combined and combined by those skilled in the art without contradiction.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the representations of the present disclosure, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Although not differently defined, including technical and scientific terms used herein, all terms have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The term append defined in commonly used dictionaries is interpreted as having a meaning that is consistent with the meaning of the relevant technical literature and the currently prompted message, and is not excessively interpreted as an ideal or very formulaic meaning, so long as no definition is made.
Analysis of the heterojunction solar cell manufacturing process in the related art shows that the related art adopts a low-temperature manufacturing process, so that the cost of the grid line is greatly increased, on one hand, the silver consumption is increased, and on the other hand, the unit price of low-temperature silver paste is higher. The cost of silver paste is reduced as a technical means for reducing the cost.
At present, the following schemes exist:
1. laser transfer techniques are used. However, the performance, stability, the number of repeated use and the cost performance of the base film are not mature at present and are to be improved.
2. The copper electroplating process has the advantages of lower material cost, smaller shading area and contribution to efficiency improvement, but the process is too long, serious in pollution and difficult in mass production in large area.
3. Novel grid line design and printing. Through improving screen plate and printing technology and matching slurry, the width of the grid line is reduced, the aspect ratio of the grid line is improved, the usage amount of silver slurry is reduced, and the conversion efficiency is improved.
According to the embodiment of the disclosure, the transparent conductive layer TCL (Transparent Conductive Layer) is changed, and the purpose of replacing the functions of the traditional auxiliary grid and reducing the use amount of the slurry is achieved by designing and manufacturing the TCL in different conductive areas, so that the use amount of the slurry of the low-temperature electrode grid line is reduced.
Fig. 1 is a top view of a heterojunction solar cell according to an embodiment of the disclosure, fig. 2 is a cross-sectional view of the heterojunction solar cell shown in fig. 1 along AA 'direction, fig. 3 is a cross-sectional view of the heterojunction solar cell shown in fig. 1 along BB' direction, and in combination with fig. 1-3, the heterojunction solar cell includes, but is not limited to, the following structures:
a heterojunction cell 1;
a first transparent conductive layer 21 and a second transparent conductive layer 22 located on the front surface (upper shown in fig. 2) and the back surface (lower shown in fig. 2) of the heterojunction cell 1;
the first electrode grid line 31 is positioned on one side of the first transparent conductive layer 21 away from the heterojunction unit 1, and the first electrode grid line 31 is electrically connected with the first transparent conductive layer 21;
the second electrode grid line 32 is positioned on one side of the second transparent conductive layer 22 away from the heterojunction unit 1, and the second transparent conductive layer 22 is electrically connected with the first electrode grid line 32;
the first transparent conductive layer 21 and the second transparent conductive layer 22 are all set to be partition structures, each partition structure on each side comprises a first partition 201 and a second partition 202 which are arranged at intervals, the sheet resistance of the first partition 201 is larger than that of the second partition 202, two adjacent first partitions 201 and second partitions 202 are electrically connected, and an electrode grid line on each side is electrically connected with the second partition 202.
With the heterojunction solar cell of the present embodiment, since the square resistances of the first partition 201 and the second partition 202 are different, the conductivity of the first partition 201 is different, the first partition 201 with high square resistance can be used to conduct photo-generated carriers to the second partition 202 with low square resistance through electrical connection, the second partition 202 with low square resistance can be used to conduct carriers to the corresponding electrode grid line again through electrical connection, and the second partition 202 plays a role of converging and can bear the function of the sub-grid in the related art.
In this case, the first electrode grid line 31 and the second electrode grid line 32 are used as main grids, and the heterojunction solar cell can achieve the purpose of saving electrode grid line slurry by not providing auxiliary grids, so that the manufacturing cost of the heterojunction solar cell is reduced.
In the disclosed embodiment, the sheet resistance difference between the first partition 201 and the second partition 202 ranges from 20-500ohm/sq. The parameter range can be suitable for most of the conventional process ranges, and can effectively balance the electric performance, the optical performance and the slurry saving level, thereby realizing the purposes of reducing the cost and enhancing the efficiency.
In the embodiment of the present disclosure, the second partition 202 is made of a material different from that of the first partition 201, and the second partition 202 is made of a material having better conductivity than that of the first partition 201, so that Fang Zuxiao of the second partition 202 is located in the first partition 201.
In a corresponding embodiment, different processes are used to make the oxygen and water vapor flows of the first partition 201 and the second partition 202 different, so that the conductivity of the second partition 202 is higher than that of the first partition 201, such as carrier mobility and carrier concentration increase. In addition, the second partition 202 is compounded by using a transparent conductive material or a doped material with better conductivity, such as a metal nanowire, a carbon nanotube, graphene, ICO, IWO, and the like.
In the embodiment of the present disclosure, the first partition 201 and the second partition 202 are sized in at least one of the following forms:
the width of the second partition 202 is not greater than the width of the first partition 201;
the thickness of the second section 202 is smaller than the thickness of the first section 201.
Among them, fang Zuxiao of the second partition 202 has good conductivity but relatively poor optical properties, and by providing a relatively small width, it is possible to improve the conductivity and reduce the influence of poor optical properties, thereby better exhibiting the sub-gate function.
The second partition 202 has a relatively small thickness, a narrow size, and more concentrated conductivity, and can further improve the conductivity of the second partition 202.
In the embodiment of the present disclosure, the first electrode gate line 31 is also provided in electrical connection with the first partition 201 of the front surface. Thus, the first region 201 of high sheet resistance may also be used to conduct photogenerated carriers to the first electrode gate line 31 through an electrical connection. Accordingly, the second electrode gate line 32 may be electrically connected to the first partition 201 on the rear surface.
In this embodiment, the first partition 201 is higher in sheet resistance than the adjacent second partition 202 and the corresponding electrode grid line, so that the first partition 201 is electrically connected to the second partition 202 and the corresponding electrode grid line, which can perform a good shunt function and enhance the current transmission efficiency.
In the embodiment of the present disclosure, the electrical connection between the first electrode gate line 31, the second electrode gate line 32 and the corresponding first partition 201 is a contact connection.
In further embodiments of the present disclosure, the first partition may also be provided to be insulated from the corresponding electrode gate line, with no carrier conduction therebetween.
In the present embodiment, the electrical connection between the first electrode gate line 31 and the second electrode gate line 32 and the corresponding second partition 202 is set to be a contact connection. The first electrode grid line 31 and the second electrode grid line 32 are manufactured by adopting a screen printing process, so that the welding step of the main grid and the auxiliary grid in the related art is avoided, and the manufacturing cost is reduced.
As shown in fig. 1, in the embodiment of the present disclosure, on the side where the heterojunction unit 1 (refer to fig. 2) is provided with the partition structure, as above, a plurality of first electrode gate lines 31 arranged along the second straight line direction BB 'are provided, the first electrode gate lines 31 extending along the first straight line direction AA'; the first straight direction AA 'is perpendicular to the second straight direction BB'.
In this case, each of the first electrode gate lines 31 spans the first and second partitions 201 and 202 arranged at intervals, is electrically connected to the second partition 202, and may be disposed in an insulating manner with respect to the first partition 201.
In the embodiment of the present disclosure, the layout of the second electrode gate line 32 on the other side of the heterojunction cell 1 may refer to the arrangement of the first electrode gate line 31, and will not be described herein.
In the embodiment of the present disclosure, the first electrode gate line 31 and the second electrode gate line 32 are metal electrodes, and may be made of silver, copper or other metal materials.
In the embodiment of the present disclosure, above the heterojunction unit 1, the partition structure of the first transparent conductive layer 21 includes a plurality of first partitions 201 and second partitions 202 arranged at intervals along the first straight line direction AA'. The number and size of the first partition 201 and the second partition 202 are not particularly limited.
In other embodiments, for the structure of the second transparent conductive layer below the heterojunction unit 1, reference can be made to the first transparent conductive layer, which is not limited herein.
In the embodiment of the disclosure, the first transparent conductive layer 21 and the second transparent conductive layer 22 are provided as transparent conductive oxide (Transparent Conductive Oxide, abbreviated as TCO) films, wherein the TCO may be tin doped indium oxide (ITO), tungsten doped indium oxide (IWO), cesium doped indium oxide (ICO) or aluminum doped zinc oxide (AZO).
In the embodiments of the present disclosure, the difference in sheet resistances between the two may be achieved by setting the component content or size.
In the embodiment of the present disclosure, the second partition 202 and the first electrode grid line 31 may be provided with a chimeric structure, and the first electrode grid line 31 is embedded into the second partition 202, so that the two are in close contact, and the stability and the conductivity are better.
The first electrode grid line 31 is not embedded in the first partition 201, and may be, for example, spanned over the first partition 201 to keep the two insulated.
In the embodiment of the present disclosure, the heterojunction cell 1 may include:
a silicon substrate 11;
a first doped amorphous silicon layer 12, and a first intrinsic amorphous silicon layer 13 disposed between the first doped amorphous silicon layer 12 and the front surface of the silicon substrate 11, the silicon substrate 11 being the same type of doping as the first doped amorphous silicon layer 12;
a second doped amorphous silicon layer 14, and a second intrinsic amorphous silicon layer 15 disposed between the back surface of the silicon substrate 11 and the second doped amorphous silicon layer 14, the silicon substrate 11 being of opposite doping type to the second doped amorphous silicon layer 14.
In a heterojunction structure, the heterojunction is formed by two different semiconductor materials. The silicon substrate 11 is selected to have N-type doped single crystal silicon c-Si, a first intrinsic amorphous silicon (i-a-Si, intrinsic amorphous Silicon) layer 13 and an N-type first doped amorphous silicon (N-a-Si, N-type amorphous Silicon) layer 12 formed in sequence on the front surface thereof, and a second intrinsic amorphous silicon layer 15 and a P-type second doped amorphous silicon (P-a-Si, N-type amorphous Silicon) layer 14 formed in sequence on the back surface of the silicon substrate 11 to form a back surface field to form a P-N junction for current transmission. The surface defects are passivated by the first and second intrinsic amorphous silicon layers 13 and 15, thereby generating a higher operating voltage.
Further, amorphous silicon on the front surface of the silicon substrate 11 can be hydrogenated, the transparency of the light incident window of a-Si: H is higher, the band gap is larger, the open circuit voltage is higher, and the hydrogen atoms can play a passivation role on the silicon substrate 11, so that higher conversion efficiency is obtained.
In the present embodiment, transparent conductive layers based on a partition structure are provided on both sides of the heterojunction cell 1. In other embodiments, a transparent conductive layer based on a partition structure may be disposed on one side of the heterojunction unit, and a transparent conductive layer of a partition structure may not be disposed on the other side.
Therefore, in the corresponding embodiment, the transparent conductive layer on at least one side of the heterojunction unit is set to be a partition structure, the partition structure comprises a first partition and a second partition which are arranged at intervals and are electrically connected with the electrode grid line through the second partition, the sheet resistance of the first partition is larger than that of the second partition, and two adjacent first partitions and the second partitions are electrically connected.
In the embodiment of the present disclosure, a plurality of electrode gate lines arranged in a second linear direction BB 'are disposed on a side of the heterojunction unit 1 on which the partition structure is disposed, and the electrode gate lines extend in a first linear direction AA'; the first straight direction AA 'is perpendicular to the second straight direction BB'.
On the side of the heterojunction unit 1 where the partition structure is provided, an insulating arrangement is provided between the electrode gate line and the second partition 202.
Fig. 4 shows a flowchart of a method for preparing a heterojunction solar cell according to an embodiment of the disclosure, and as shown in fig. 4, the method may include, but is not limited to, the following steps:
step 410: forming a heterojunction unit;
step 420: transparent conductive layers are formed on the front surface and the back surface of the heterojunction unit, wherein the transparent conductive layer on at least one side of the heterojunction unit is arranged into a partition structure, the partition structure comprises a first partition and a second partition which are arranged at intervals, the square resistance of the first partition is larger than that of the second partition, and two adjacent first partitions and the second partition are electrically connected;
step 430: and forming an electrode grid line on one side of each transparent conductive layer, which is far away from the heterojunction unit, wherein the electrode grid line is electrically connected with the transparent conductive layers, and the transparent conductive layers provided with the partition structures are electrically connected with the electrode grid line through the second partitions.
For heterojunction units, as above, N-type monocrystalline silicon (C-Si) is taken as a substrate light absorption region, and after texturing and cleaning, an intrinsic amorphous silicon film (i-a-Si: H) and doped P-type amorphous silicon (P-a-Si: H) are sequentially deposited on the front surface of the heterojunction unit so as to form a P-N heterojunction with a silicon substrate.
Further, a back surface field is formed on the back surface of the silicon substrate by depositing i-a-Si: H and doped N-type amorphous silicon (N-a-Si: H), and the transparent conductive layer deposited on both sides can not only reduce the series resistance when collecting current, but also play a role in antireflection.
Further, the metal gate line may be formed at both sides of the heterojunction cell by screen printing.
In embodiments of the present disclosure, physical vapor deposition (Physical Vapor Deposition, PVD) or reactive plasma deposition (Reactive Plasma Deposition, RPD) may be employed for the formation process of the transparent conductive layer. To achieve the partitioning, a baffle may be used for the partitioning of the first partition and the second partition.
For TCOs, PVD (e.g., magnetron sputtering) or RPD fabrication can be used. If the transparent conductive layer is further laminated with other conductive materials, the coating may be performed in combination with screen printing, such as spraying, spin coating, dip coating, or slit coating.
The above embodiments are merely illustrative of the principles of the present disclosure and its efficacy, and are not intended to limit the disclosure. Modifications and variations may be made to the above-described embodiments by those of ordinary skill in the art without departing from the spirit and scope of the present disclosure. Accordingly, it is intended that all equivalent modifications and variations which a person having ordinary skill in the art would accomplish without departing from the spirit and technical spirit of the present disclosure be covered by the claims of the present disclosure.

Claims (11)

1. A heterojunction solar cell, comprising:
a heterojunction unit;
transparent conductive layers positioned on the front and back sides of the heterojunction unit;
the electrode grid line is positioned on one side of the transparent conductive layer, which is away from the heterojunction unit, and is electrically connected with the transparent conductive layer;
the transparent conductive layer on at least one side of the heterojunction unit is arranged to be of a partition structure, the partition structure comprises a first partition and a second partition which are distributed at intervals, the first partition and the electrode grid line are electrically connected through the second partition, the square resistance of the first partition is larger than that of the second partition, and two adjacent partitions are electrically connected.
2. The heterojunction solar cell of claim 1, wherein the partition structure comprises a plurality of first partitions and second partitions arranged at intervals along a first linear direction.
3. The heterojunction solar cell as claimed in claim 2, wherein a plurality of electrode grid lines arranged along a second straight line direction are arranged on one side of the heterojunction unit provided with the partition structure, and the electrode grid lines extend along the first straight line direction; the first straight line direction is perpendicular to the second straight line direction.
4. A heterojunction solar cell as claimed in claim 3, wherein on the side of the heterojunction cell where the partition structure is provided, the electrode grid line is also provided in electrical connection with the second partition.
5. The heterojunction solar cell of claim 4, wherein the electrical connections between the electrode grid line and the first and second partitions are contact connections.
6. The heterojunction solar cell of claim 1, wherein the sheet resistance difference between the first and second partitions ranges from 20-500ohm/sq.
7. The heterojunction solar cell of claim 1, wherein the second region is of a different material than the first region, and wherein the second region is of a material that is more conductive than the first region.
8. The heterojunction solar cell of claim 1, wherein the first and second partitions are sized in at least one of the following forms:
the width of the second partition is not larger than that of the first partition;
the thickness of the second partition is smaller than that of the first partition.
9. The heterojunction solar cell of claim 1, wherein the electrical connection between adjacent two of the first and second sections is a contact connection.
10. The heterojunction solar cell of claim 1, wherein the heterojunction cell comprises:
a silicon substrate;
the device comprises a first doped amorphous silicon layer and a first intrinsic amorphous silicon layer arranged between the first doped amorphous silicon layer and the front surface of the silicon substrate, wherein the doping types of the silicon substrate and the first doped amorphous silicon layer are the same;
the silicon substrate comprises a silicon substrate body and a second doped amorphous silicon layer, wherein the silicon substrate body is provided with a back surface and a first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer is arranged between the back surface of the silicon substrate body and the second doped amorphous silicon layer, and the doping types of the silicon substrate body and the second doped amorphous silicon layer are opposite.
11. A method of fabricating a heterojunction solar cell, comprising:
forming a heterojunction unit;
transparent conductive layers are formed on the front surface and the back surface of the heterojunction unit, the transparent conductive layer on at least one side of the heterojunction unit is arranged into a partition structure, the partition structure comprises a first partition and a second partition which are arranged at intervals, the square resistance of the first partition is larger than that of the second partition, and two adjacent first partitions and second partitions are electrically connected;
and forming an electrode grid line on one side of each transparent conductive layer, which is far away from the heterojunction unit, wherein the electrode grid lines are electrically connected with the transparent conductive layers, and the transparent conductive layers with the partition structures are electrically connected with the electrode grid lines through the second partitions.
CN202310593656.8A 2023-05-24 2023-05-24 Heterojunction solar cell and preparation method thereof Pending CN116581169A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117594667A (en) * 2023-10-23 2024-02-23 天合光能股份有限公司 Solar cell and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117594667A (en) * 2023-10-23 2024-02-23 天合光能股份有限公司 Solar cell and preparation method thereof

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