CN117594667A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN117594667A CN117594667A CN202311373347.6A CN202311373347A CN117594667A CN 117594667 A CN117594667 A CN 117594667A CN 202311373347 A CN202311373347 A CN 202311373347A CN 117594667 A CN117594667 A CN 117594667A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 230000003667 anti-reflective effect Effects 0.000 claims description 24
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 8
- 239000002905 metal composite material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052709 silver Inorganic materials 0.000 abstract description 19
- 239000004332 silver Substances 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 67
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000003203 everyday effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 210000004754 hybrid cell Anatomy 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 silver aluminum Chemical compound 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
Abstract
The application relates to a solar cell and a preparation method thereof. The first transparent conductive layer is arranged on one side of the backlight surface of the substrate; the anti-reflection layer is arranged on one side of the first transparent conducting layer, which is away from the substrate; the bus layer is arranged on one side of the antireflection layer, which is away from the first transparent conductive layer, and is provided with a convex block protruding towards one side of the first transparent conductive layer along the thickness direction of the solar cell, and the convex block passes through the antireflection layer and is electrically contacted with the first transparent conductive layer. The back light surface of the solar cell in the application does not need to be additionally provided with the grid line which is connected with the first transparent conducting layer and is prepared by silver paste, the processing technology of the back surface of the whole cell is simpler, mass production is easy, the dosage of the silver paste can be reduced, the manufacturing cost of the whole solar cell is lower, the optical loss of the whole cell is smaller, and the photoelectric conversion efficiency is effectively improved.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof.
Background
With the development of modern industry, global energy crisis and atmospheric pollution problems are increasingly prominent, and traditional fuel energy is decreasing every day. Since abundant solar radiation energy is an important renewable energy source, solar cells are a focus of attention as functions and advantages of converting solar radiation energy into electric energy. However, the existing solar cell has high manufacturing cost and optical loss due to the large amount of silver paste, and the photoelectric conversion efficiency needs to be further improved.
Disclosure of Invention
Based on this, it is necessary to provide a solar cell against the problems that the existing solar cell has high cost, high optical loss and further improved photoelectric conversion efficiency.
A solar cell, comprising:
a substrate;
the first transparent conductive layer is arranged on one side of the backlight surface of the substrate;
the anti-reflection layer is arranged on one side of the first transparent conducting layer, which is away from the substrate;
and the converging layer is arranged on one side of the antireflection layer, which is away from the first transparent conductive layer, and is provided with a convex block which protrudes towards one side of the first transparent conductive layer along the thickness direction of the solar cell, and the convex block passes through the antireflection layer and is electrically contacted with the first transparent conductive layer.
In one embodiment, the number of the bumps is a plurality, the bumps are arranged at intervals, two adjacent bumps are separated by one antireflection layer section, each bump and one adjacent antireflection layer section form a connection unit together, and the length d of the connection unit along the first direction meets the condition:
500μm≤d≤3000μm。
in one embodiment, the length d of the bump in the first direction in each of the connection units 1 Length d of the antireflection layer section along the first direction 2 The conditions are satisfied:
d 1 ≤d 2 ≤100d 1 。
in one embodiment, the length d of the bump in the first direction in each of the connection units 1 The conditions are satisfied:
5μm≤d 1 ≤500μm。
in one embodiment, the length d of the bump in the first direction in each of the connection units 1 The conditions are satisfied:
20μm≤d 1 ≤100μm。
in one embodiment, the length d of the antireflective layer segment in the first direction within each of the connection units 2 The conditions are satisfied:
500μm≤d 2 ≤2000μm。
in one embodiment, the length d of the antireflective layer segment in the first direction within each of the connection units 2 The conditions are satisfied:
1000μm≤d 2 ≤1500μm。
in one embodiment, the anti-reflection layer is one or more composite layers of magnesium fluoride, silicon oxide and silicon nitride;
the confluence layer is a single or multiple metal composite layers or metal slurry.
In one embodiment, the solar cell further comprises a second transparent conductive layer, wherein the second transparent conductive layer is arranged on one side of the light receiving surface of the substrate;
the solar cell further comprises a grid line, wherein the grid line is arranged on one side, away from the substrate, of the second transparent conducting layer, and the grid line is connected with the second transparent conducting layer.
The application also provides a preparation method of the solar cell, which can solve at least one technical problem.
The preparation method of the solar cell provided by the application comprises the following steps:
providing a substrate, wherein the substrate comprises a base, a first intrinsic amorphous silicon layer and a first doping layer which are sequentially arranged on one side of a backlight surface of the base, and a second intrinsic amorphous silicon layer and a second doping layer which are sequentially arranged on one side of a light receiving surface of the base;
forming a first transparent conductive layer on one side of a backlight surface of the substrate;
forming an anti-reflection layer on one side of the first transparent conductive layer away from the substrate;
forming a converging layer on one side of the anti-reflection layer away from the first transparent conductive layer;
the bus layer is provided with a bump protruding towards one side of the first transparent conductive layer along the thickness direction of the solar cell, and the bump penetrates through the anti-reflection layer to be in electrical contact with the first transparent conductive layer.
When the solar cell is manufactured, the backlight surface of the solar cell is provided with the converging layer and passes through the anti-reflection layer to be in electrical contact with the first transparent conductive layer through the convex block protruding from the converging layer, so that the backlight surface of the solar cell does not need to be additionally provided with the grid line which is in electrical contact with the first transparent conductive layer and is manufactured by silver paste, the processing technology of the back surface of the whole cell is simpler, mass production is easy, the using amount of the silver paste can be reduced, and the manufacturing cost of the whole solar cell is lower. Meanwhile, the contact area between the first transparent conductive layer and the bus layer is small, so that sputtering damage to the first transparent conductive layer can be further reduced when the bus layer is prepared by deposition. And because the antireflection layer is arranged between the first transparent conductive layer and the bus layer, light entering the substrate from the front side to the back side can be more incident into the substrate, optical plasma absorption of the first transparent conductive layer and the bus layer is effectively reduced, the photocurrent density is further improved, and optical loss between the first transparent conductive layer and the bus layer is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram showing connection of the first transparent conductive layer, the anti-reflection layer and the bus layer in the solar cell shown in fig. 1.
Reference numerals: 100-substrate; 110-a substrate; 120-a first intrinsic amorphous silicon layer; 130-a first doped layer; 140-a second intrinsic amorphous silicon layer; 150-a second doped layer; 200-a first transparent conductive layer; 300-an anti-reflection layer; 310-an antireflective layer segment; 400-a confluence layer; 410-bump; 500-connection units; 600-a second transparent conductive layer; 700-gate line.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., these terms refer to the orientation or positional relationship based on the drawings, which are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In this application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
With the development of modern industry, global energy crisis and atmospheric pollution problems are increasingly prominent, and traditional fuel energy is decreasing every day. Since abundant solar radiation energy is an important renewable energy source, solar cells are a focus of attention as functions and advantages of converting solar radiation energy into electric energy. However, the existing solar cell has high manufacturing cost and optical loss due to the large amount of silver paste, and the photoelectric conversion efficiency needs to be further improved.
Referring to fig. 1 and 2, fig. 1 shows a schematic structural diagram of a solar cell according to an embodiment of the present application. Fig. 2 shows a schematic connection diagram of the first transparent conductive layer 200, the anti-reflection layer 300, and the bus layer 400 in the solar cell shown in fig. 1. The solar cell according to an embodiment of the present application includes a substrate 110, a first transparent conductive layer 200, an anti-reflection layer 300, and a bus layer 400. The first transparent conductive layer 200 is disposed on one side of the backlight surface of the substrate 110; the anti-reflection layer 300 is disposed on a side of the first transparent conductive layer 200 facing away from the substrate 110; the bus layer 400 is disposed on a side of the anti-reflection layer 300 facing away from the first transparent conductive layer 200, and the bus layer 400 is configured with a bump 410 protruding toward the first transparent conductive layer 200 along a thickness direction of the solar cell, specifically, a yy' direction in fig. 1, where the bump 410 passes through the anti-reflection layer 300 and is electrically contacted with the first transparent conductive layer 200.
Because the bus layer 400 is arranged on the backlight surface of the solar cell and the protruding lug 410 protruding through the bus layer 400 passes through the anti-reflection layer 300 to be in electrical contact with the first transparent conductive layer 200, the backlight surface of the solar cell in the application does not need to be additionally provided with the grid line 700 which is in electrical contact with the first transparent conductive layer 200 and is prepared by silver paste, the processing technology of the back surface of the whole cell is simpler, the mass production is easy, the consumption of the silver paste can be reduced, and the manufacturing cost of the whole solar cell is lower. Meanwhile, since the contact area between the first transparent conductive layer 200 and the bus layer 400 is small, it is possible to further reduce sputtering damage to the first transparent conductive layer 200 when the bus layer 400 is prepared by deposition. And the anti-reflection layer 300 is arranged between the first transparent conductive layer 200 and the bus layer 400, so that light entering from the front surface to the back surface can be more incident into the substrate 110, optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 is effectively reduced, the photocurrent density is further improved, and optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
The Isc (short-circuit current) of the solar cell is increased, and Voc (open-circuit voltage), FF (fill factor) and off (photoelectric conversion efficiency) are all significantly improved.
It should be noted that, by selecting different structures of the substrate 110, different types of solar cells may be prepared. Such as heterojunction solar cells, TOPCon (tunnel oxide passivation contact) cells, hybrid cells or perovskite cells, etc.
Specifically, when the substrate 110 is a silicon+intrinsic amorphous silicon+doped microcrystalline/amorphous silicon structure, the first transparent conductive layer 200 is a transparent conductive oxide film (TCO, transparent Conductive Oxides), the solar cell is a heterojunction solar cell.
The following is a specific description of the structure of the solar cell. Referring to fig. 1 and fig. 2, in the solar cell provided in an embodiment of the present application, the number of the bumps 410 is a plurality of the bumps 410 are arranged at intervals along a first direction, specifically, the first direction is xx' direction in fig. 1, two adjacent bumps 410 are arranged at intervals through one antireflection layer segment 310, each bump 410 and one adjacent antireflection layer segment 310 form a connection unit 500 together, and a length d of the connection unit 500 along the first direction satisfies the condition: d is more than or equal to 500 mu m and less than or equal to 3000 mu m. By arranging the plurality of bumps 410 which are arranged along the first direction at intervals, the conductivity of the first transparent conductive layer 200 and the bus layer 400 can be effectively ensured, and the overlarge contact area of the first transparent conductive layer and the bus layer can be avoided. When the solar cell is manufactured, sputtering damage to the first transparent conductive layer 200 can be effectively reduced; the optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 can be effectively reduced, so that the photocurrent density is improved, and the optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
In one specific embodiment, the length d of the connection unit 500 in the first direction is 500 μm. In another specific embodiment thereof, the length d of the connection unit 500 in the first direction is 3000 μm. In yet another specific embodiment, the length d of the connection unit 500 in the first direction is 1500 μm.
In one embodiment, the length d of the bump 410 in the first direction in each connection unit 500 1 Length d along a first direction with antireflective layer segment 310 2 The conditions are satisfied: d, d 1 ≤d 2 ≤100d 1 . By extending the length d of the anti-reflective layer segment 310 in the first direction 2 Set to be equal to or greater than the length d of the bump 410 along the first direction 1 And less than or equal to 100 times the length d of the bump 410 along the first direction 1 Such that the length d of the anti-reflection layer segment 310 in the first direction within each connection unit 500 2 And a length d of the bump 410 in the first direction 1 In a relatively suitable range, so that the conductivity of the first transparent conductive layer 200 and the bus layer 400 can be effectively ensured, and the overlarge contact area of the first transparent conductive layer and the bus layer can be avoided. When the solar cell is manufactured, sputtering damage to the first transparent conductive layer 200 can be effectively reduced; the optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 can be effectively reduced, so that the photocurrent density is improved, and the optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
In one particular embodiment, the length d of the antireflective layer segment 310 in the first direction 2 Equal to the length d of the bump 410 in the first direction 1 . In another particular embodiment, the length d of the anti-reflective layer segment 310 in the first direction 2 Length d of bump 410 in the first direction equal to 100 times 1 . In yet another particular embodiment, the length d of the antireflective layer segment 310 in the first direction 2 Length d of the bump 410 in the first direction equal to 50 times 1 。
In one embodiment, the length d of the bump 410 in the first direction in each connection unit 500 1 The conditions are satisfied: d is less than or equal to 5 mu m 1 Less than or equal to 500 mu m. By extending the length d of the bump 410 in the first direction 1 The bump 410 is disposed within a range of 5 μm or more and 500 μm or less, so that the length of the bump 410 along the first direction is relatively suitable, the bump is easy to process and is not too long, and when the conductive effect of the first transparent conductive layer 200 is satisfied, the contact area between the bump and the first transparent conductive layer can be effectively prevented from being too large. In one particular embodiment, the length d of the bump 410 in the first direction within each connection unit 500 1 Is 5 μm. In another specific embodiment, the length d of the bump 410 in the first direction in each connection unit 500 1 500 μm. In yet another specific embodiment, the length d of the bump 410 in the first direction within each connection unit 500 1 100 μm.
In one embodiment, the length d of the bump 410 in the first direction in each connection unit 500 1 The conditions are satisfied: d is less than or equal to 20 mu m 1 Less than or equal to 100 mu m. By extending the length d of the bump 410 in the first direction 1 The bump 410 is set in a range of 20 μm or more and less than 100 μm, so that the length of the bump 410 along the first direction is relatively suitable, the bump is easy to process and is not too long, and when the conductive effect of the first transparent conductive layer 200 is satisfied, the contact area between the bump and the first transparent conductive layer can be effectively prevented from being too large.
In one particular embodiment, the length d of the bump 410 in the first direction within each connection unit 500 1 20 μm. In another specific embodiment, the length d of the bump 410 in the first direction in each connection unit 500 1 100 μm. In yet another embodiment, the bumps 41 in each connection unit 5000 length d in the first direction 1 50 μm.
In one embodiment, the length d of the anti-reflective layer segment 310 in the first direction within each connection unit 500 2 The conditions are satisfied: d is less than or equal to 500 mu m 2 Less than or equal to 2000 mu m. By the length d of the anti-reflection layer segment 310 in the first direction within each connection unit 500 2 The length of the anti-reflection layer segment 310 along the first direction is longer in the range of 500 μm or more and 2000 μm or less, so that the contact area between the first transparent conductive layer 200 and the bus layer 400 can be effectively reduced, and the sputtering damage to the first transparent conductive layer 200 can be further reduced when the bus layer 400 is prepared by deposition. And the light incident from the front surface to the back surface can be more incident into the substrate 110, so that the optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 is effectively reduced, the photocurrent density is further improved, and the optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
In one particular embodiment, the length d of the antireflective layer segment 310 in the first direction within each connection unit 500 2 500 μm. In another particular embodiment thereof, the length d of the anti-reflective layer segment 310 in the first direction within each connection unit 500 2 2000. Mu.m. In yet another particular embodiment, the length d of the antireflective layer segment 310 in the first direction within each connection unit 500 2 Is 1200 μm.
In one embodiment, the length d of the anti-reflective layer segment 310 in the first direction within each connection unit 500 2 The conditions are satisfied: d is less than or equal to 1000 mu m 2 Less than or equal to 1500 mu m. By the length d of the anti-reflection layer segment 310 in the first direction within each connection unit 500 2 Is arranged in a range of 1000 μm or more and 1500 μm or less, thereby making the length of the antireflection layer segment 310 in the first direction longer, and further effectively reducing the contact area between the first transparent conductive layer 200 and the bus layer 400, and further reducing the contact area for the bus layer 400 during deposition preparationSputtering damage of the first transparent conductive layer 200. And the light incident from the front surface to the back surface can be more incident into the substrate 110, so that the optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 is effectively reduced, the photocurrent density is further improved, and the optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
In one particular embodiment, the length d of the antireflective layer segment 310 in the first direction within each connection unit 500 2 1000 μm. In another particular embodiment thereof, the length d of the anti-reflective layer segment 310 in the first direction within each connection unit 500 2 1500 μm. In yet another particular embodiment, the length d of the antireflective layer segment 310 in the first direction within each connection unit 500 2 1300 μm.
In one embodiment, the anti-reflective layer 300 is one or more composite layers of magnesium fluoride, silicon oxide, and silicon nitride. By so selecting, light incident from the front side to the back side can be more incident into the substrate 110 through the anti-reflection layer 300.
In one embodiment, the bus layer 400 is a single or multiple metal composite layer or metal paste. The confluence layer 400 is prepared by adopting a single or multiple metal composite layers or metal slurry, so that the fabrication cost of the confluence layer 400 is low, and the fabrication cost of the whole solar cell is low, and the economic benefit is good. In one specific embodiment, the bus layer 400 may be a single or multiple metal composite layer of copper, aluminum, silver, nickel, titanium, or an inexpensive metal paste of aluminum paste, silver aluminum paste, copper paste, or the like.
It should be noted that, when the bus layer 400 is made of a single metal material of silver, the amount of silver paste used can be reduced compared with the existing gate line 700 made of silver paste, because the existing gate line 700 is made by sputtering a layer of copper, electroplating several layers of silver, and back etching. However, the bus layer 400 in the present application is only sputtered or printed, and is not etched back, so that less silver paste is required, and the economic benefit is better. And when the confluence layer 400 of the present application adopts a single or multiple metal composite layers of copper, aluminum, nickel, titanium, etc., or is an inexpensive metal paste of aluminum paste, silver aluminum paste, copper paste, etc., the fabrication cost is lower.
In one embodiment, the bus layer 400 is made of a copper-tin metal composite layer, which is economically advantageous.
In one specific embodiment, the first transparent conductive layer 200 is made of any material such as ITO (tin doped indium oxide), ICO (cerium doped indium oxide), IWO (tungsten doped indium oxide), AZO (aluminum doped zinc oxide), GAZO (aluminum doped zinc oxide), or GZO (zinc doped zinc oxide).
Referring to fig. 1 and fig. 2, the solar cell provided in an embodiment of the present application further includes a second transparent conductive layer 600, where the second transparent conductive layer 600 is disposed on one side of the light-receiving surface of the substrate 110; the solar cell further includes a gate line 700, where the gate line 700 is disposed on a side of the second transparent conductive layer 600 facing away from the substrate 110, and the gate line 700 is electrically contacted with the second transparent conductive layer 600. By disposing the second transparent conductive layer 600 on one side of the light receiving surface of the substrate 110 and electrically contacting the gate line 700 with the second transparent conductive layer 600, the substrate 110 can transfer electric energy through the gate line 700 after photoelectric conversion under the irradiation of sunlight.
In one specific embodiment, the second transparent conductive layer 600 is made of any material such as ITO (tin doped indium oxide), ICO (cerium doped indium oxide), IWO (tungsten doped indium oxide), AZO (aluminum doped zinc oxide), GAZO (aluminum doped zinc oxide), or GZO (zinc doped zinc oxide).
Referring to fig. 1 and 2, the solar cell provided in an embodiment of the present application further includes a first intrinsic amorphous silicon layer 120, a first doped layer 130, and a second intrinsic amorphous silicon layer 140 and a second doped layer 150 sequentially disposed on one side of the back surface of the substrate 110. In one specific embodiment, the light receiving surface of the substrate 110 is in a pyramid suede structure, the back surface is in a polishing structure, so that the passivation performance of the substrate 110 is improved, the thickness of the silicon layer of the first intrinsic amorphous silicon layer 120 prepared on the back surface is more uniform, more light receiving surfaces can reflect and enter sunlight, more sunlight can be absorbed by the substrate 110, and Isc (short circuit current) of the whole solar cell is increased. And Voc (open circuit voltage), FF (fill factor) and off (photoelectric conversion efficiency) are all significantly improved.
In another embodiment, the light-receiving surface of the substrate 110 is a pyramid-shaped textured structure, and the N-shaped back surface is also a non-polished structure.
The application also provides a preparation method of the solar cell, which comprises the following steps: providing a substrate 100, wherein the substrate 100 comprises a base 110, a first intrinsic amorphous silicon layer 120 and a first doping layer 130 which are sequentially arranged on one side of a backlight surface of the base 110, and a second intrinsic amorphous silicon layer 140 and a second doping layer 150 which are sequentially arranged on one side of a light receiving surface of the base 110; forming a first transparent conductive layer 200 on a backlight surface side of the substrate 100; forming an anti-reflection layer 300 on a side of the first transparent conductive layer 200 facing away from the substrate 100; forming a bus layer 400 on a side of the anti-reflection layer 300 facing away from the first transparent conductive layer 200; the bus layer 400 is formed with a bump 410 protruding toward one side of the first transparent conductive layer 200 in the thickness direction of the solar cell, and the bump 410 passes through the anti-reflection layer 300 to electrically contact the first transparent conductive layer 200.
The solar cell prepared by the preparation method has the advantages that the bus layer 400 is arranged on the backlight surface of the solar cell, and the convex lug 410 protruding through the bus layer 400 passes through the anti-reflection layer 300 to be in electrical contact with the first transparent conductive layer 200, so that the grid line 700 which is in electrical contact with the first transparent conductive layer 200 and is prepared from silver paste is not required to be additionally arranged on the backlight surface of the solar cell, the processing technology of the back surface of the whole cell is simpler, the mass production is easy, the using amount of the silver paste can be reduced, and the manufacturing cost of the whole solar cell is lower. Meanwhile, since the contact area between the first transparent conductive layer 200 and the bus layer 400 is small, it is possible to further reduce sputtering damage to the first transparent conductive layer 200 when the bus layer 400 is prepared by deposition. And the anti-reflection layer 300 is arranged between the first transparent conductive layer 200 and the bus layer 400, so that light entering from the front surface to the back surface can be more incident into the substrate 110, optical plasma absorption of the first transparent conductive layer 200 and the bus layer 400 is effectively reduced, the photocurrent density is further improved, and optical loss between the first transparent conductive layer 200 and the bus layer 400 is reduced, so that the optical loss of the whole solar cell is further reduced, and the photoelectric conversion efficiency is effectively improved.
The solar cell manufacturing method can manufacture solar cells of different types. Such as heterojunction solar cells, TOPCon (tunnel oxide passivation contact) cells, hybrid cells or perovskite cells, etc.
Specifically, when the substrate 110 is a silicon+intrinsic amorphous silicon+doped microcrystalline/amorphous silicon structure, the first transparent conductive layer 200 is a transparent conductive oxide film (TCO, transparent Conductive Oxides), the heterojunction solar cell can be fabricated.
In one embodiment, substrate 110 is an N-type silicon wafer, first doped layer 130 is a P-doped layer, and second doped layer 150 is an N-doped layer.
In one specific embodiment, the preparation method further includes cleaning the substrate 110, and performing a texturing operation on the light-receiving surface of the substrate 110. After the texturing operation is performed on the light receiving surface of the substrate 110, a first intrinsic amorphous silicon layer 120 and a second intrinsic amorphous silicon layer 140 are respectively formed on the backlight surface and the light receiving surface of the substrate 110; forming a first doped layer 130 on a side of the first intrinsic amorphous silicon layer 120 facing away from the substrate 110; a second doped layer 150 is formed on a side of the second intrinsic amorphous silicon layer 140 facing away from the substrate 110.
In one specific embodiment, the method further includes forming a first transparent conductive layer 200 on a side of the first doped layer 130 facing away from the first intrinsic amorphous silicon layer 120; forming a second transparent conductive layer 600 on a side of the second doping layer 150 facing away from the second intrinsic amorphous silicon layer 140; an anti-reflection layer 300 is formed on a side of the first transparent conductive layer 200 facing away from the first doping layer 130; forming a bus layer 400 on a side of the anti-reflection layer 300 facing away from the first transparent conductive layer 200; wherein the bus layer 400 is configured with a bump 410 protruding toward one side of the first transparent conductive layer 200 in the thickness direction of the solar cell, the bump 410 being connected to the first transparent conductive layer 200 through the anti-reflection layer 300.
In one particular embodiment, the first and second intrinsic amorphous silicon layers 120 and 140 are prepared on the light receiving and backlight surfaces of the substrate 110, respectively, by PECVD (plasma enhanced chemical vapor deposition), the first doped layer 130 is prepared on a side of the first intrinsic amorphous silicon layer 120 facing away from the substrate 110, and the second doped layer 150 is prepared on a side of the second intrinsic amorphous silicon layer 140 facing away from the substrate 110.
In one particular embodiment, a first transparent conductive layer (TCO) 200 is prepared by PVD (physical vapor deposition) on the side of the first doped layer 130 facing away from the first intrinsic amorphous silicon layer 120 and a second transparent conductive layer (TCO) 600 is prepared on the side of the second doped layer 150 facing away from the second intrinsic amorphous silicon layer 140.
In one particular embodiment, the first intrinsic amorphous silicon layer 120 is one of amorphous silicon, microcrystalline silicon, or nanocrystalline (oxidized) silicon.
In one specific embodiment, the second intrinsic amorphous silicon layer 140 is one of amorphous silicon, microcrystalline silicon, or nanocrystalline (oxidized) silicon.
In one specific embodiment, the refractive index of the first transparent conductive layer 200 and the second transparent conductive layer 600 is 1.9-2.1.
In one particular embodiment, the refractive index of the anti-reflective layer 300 is 1.3-1.6. Through such setting for more sunlight can reflect to the basement, and then make the basement can absorb more sunlight, improve the photoelectric conversion efficiency of whole solar cell.
In one embodiment, the anti-reflective layer 300 is formed by PECVD, evaporation, PVD, or the like.
In one particular embodiment, the bus layer 400 is prepared by PVD, evaporation, screen printing, or the like.
In one embodiment, the anti-reflection layer 300 is a magnesium fluoride layer with a thickness of 110nm prepared by an evaporation process, and the bus layer 400 is a silver layer with a thickness of 100nm prepared by an evaporation process, and the back surface has no gate line 700.
In another embodiment, the anti-reflection layer 300 is a magnesium fluoride layer with a thickness of 110nm prepared by PVD process, the bus layer 400 is a copper layer with a thickness of 100nm prepared by vapor deposition process, and the back surface has no gate line 700.
In yet another specific embodiment, the anti-reflection layer 300 is a magnesium fluoride layer with a thickness of 110nm prepared by PVD process, the bus layer 400 is a copper layer with a thickness of 100nm prepared by vapor deposition process and a silver layer with a thickness of 10nm prepared by vapor deposition process, and the back surface has no gate line 700.
In yet another specific embodiment, the anti-reflective layer 300 is a magnesium fluoride layer with a thickness of 110nm prepared by PVD process, the bus layer 400 is a copper layer with a thickness of 100nm prepared by vapor deposition process and a tin layer with a thickness of 10nm prepared by electroplating process, and the back surface has no gate line 700.
In one embodiment, the anti-reflective layer 300 is a 110nm thick magnesium fluoride layer prepared by an evaporation process, and the bus layer 400 is a 10 μm thick aluminum/silver aluminum layer prepared by a silk screen process, and the back surface has no gate line 700.
It should be understood that, in the embodiment of the present application, at least a part of the steps in the preparation method may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with other steps or at least a part of the steps or stages in other steps.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A solar cell, the solar cell comprising:
a substrate (110);
a first transparent conductive layer (200), the first transparent conductive layer (200) being disposed on one side of a backlight surface of the substrate (110);
-an anti-reflection layer (300), the anti-reflection layer (300) being arranged on a side of the first transparent conductive layer (200) facing away from the substrate (110);
and a bus layer (400), wherein the bus layer (400) is arranged on one side of the anti-reflection layer (300) away from the first transparent conductive layer (200), the bus layer (400) is provided with a protruding block (410) protruding towards one side of the first transparent conductive layer (200) along the thickness direction of the solar cell, and the protruding block (410) passes through the anti-reflection layer (300) and is electrically contacted with the first transparent conductive layer (200).
2. The solar cell according to claim 1, wherein the number of the bumps (410) is plural, the plural bumps (410) are arranged at intervals along a first direction, and two adjacent bumps (410) are spaced by one antireflection layer segment (310), each bump (410) and one adjacent antireflection layer segment (310) together form a connection unit (500), and a length d of the connection unit (500) along the first direction satisfies a condition:
500μm≤d≤3000μm。
3. the solar cell according to claim 2, wherein the bumps (410) within each of the connection units (500) are along the firstLength d in direction 1 Length d along the first direction of the antireflection layer section (310) 2 The conditions are satisfied:
d 1 ≤d 2 ≤100d 1 。
4. a solar cell according to claim 3, characterized in that the length d of the bumps (410) in the first direction within each connection unit (500) 1 The conditions are satisfied:
5μm≤d 1 ≤500μm。
5. the solar cell according to claim 4, wherein the length d of the bump (410) in the first direction within each connection unit (500) 1 The conditions are satisfied:
20μm≤d 1 ≤100μm。
6. a solar cell according to claim 3, characterized in that the length d of the antireflective layer segment (310) in the first direction within each connection unit (500) 2 The conditions are satisfied:
500μm≤d 2 ≤2000μm。
7. the solar cell according to claim 6, wherein the length d of the antireflective layer segment (310) within each connection unit (500) along the first direction 2 The conditions are satisfied:
1000μm≤d 2 ≤1500μm。
8. the solar cell according to any of claims 1-7, wherein the anti-reflective layer (300) is one or more composite layers of magnesium fluoride, silicon oxide and silicon nitride;
the confluence layer (400) is a single or multiple metal composite layers or metal slurry.
9. The solar cell according to any one of claims 1-7, further comprising a second transparent conductive layer (600), the second transparent conductive layer (600) being arranged on one side of the light receiving surface of the substrate (110);
the solar cell further comprises a grid line (700), wherein the grid line (700) is arranged on one side, away from the substrate (110), of the second transparent conducting layer (600), and the grid line (700) is in electrical contact with the second transparent conducting layer (600).
10. A method of manufacturing a solar cell, comprising:
providing a substrate (100), wherein the substrate (100) comprises a base (110), a first intrinsic amorphous silicon layer (120) and a first doping layer (130) which are sequentially arranged on one side of a backlight surface of the base (110), and a second intrinsic amorphous silicon layer (120) and a second doping layer (130) which are sequentially arranged on one side of a light receiving surface of the base (110);
forming a first transparent conductive layer (200) on a backlight surface side of the substrate (100);
-forming an anti-reflection layer (300) on a side of the first transparent conductive layer (200) facing away from the substrate (100);
-forming a bus layer (400) on a side of the anti-reflection layer (300) facing away from the first transparent conductive layer (200);
the bus layer (400) is formed with a bump (410) protruding toward one side of the first transparent conductive layer (200) along the thickness direction of the solar cell, and the bump (410) is in electrical contact with the first transparent conductive layer (200) through the anti-reflection layer (300).
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