CN203871345U - Hydrogen-doped crystallization silicon passivated heterojunction solar energy cell - Google Patents
Hydrogen-doped crystallization silicon passivated heterojunction solar energy cell Download PDFInfo
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- CN203871345U CN203871345U CN201420015111.5U CN201420015111U CN203871345U CN 203871345 U CN203871345 U CN 203871345U CN 201420015111 U CN201420015111 U CN 201420015111U CN 203871345 U CN203871345 U CN 203871345U
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- hydrogen
- silicon layer
- layer
- transparent conductive
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 238000002425 crystallisation Methods 0.000 title abstract 8
- 230000008025 crystallization Effects 0.000 title abstract 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 48
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 49
- 229910052739 hydrogen Inorganic materials 0.000 claims description 49
- 239000001257 hydrogen Substances 0.000 claims description 49
- 239000010408 film Substances 0.000 claims description 34
- 238000002161 passivation Methods 0.000 claims description 30
- 238000002156 mixing Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007704 transition Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a hydrogen-doped crystallization silicon passivated heterojunction solar energy cell. The solar energy cell comprises a P type crystalline silicon substrate, an N type hydrogen-doped crystallization silicon layer, a high doping N type amorphous silicon layer, a positive side transparent conductive film, a positive side electrode layer, a P type hydrogen-doped crystallization silicon layer, a high doping P type amorphous silicon layer, a back side transparent conductive film, and a back side electrode layer. The N type hydrogen-doped crystallization silicon layer is deposited on the positive surface of the P type crystalline silicon substrate. The high doping N type amorphous silicon layer is deposited on the upper surface of the N type hydrogen-doped crystallization silicon layer. The P type hydrogen-doped crystallization silicon layer is deposited on the back surface of the P type crystalline silicon substrate. The high doping P type amorphous silicon layer is deposited on the lower surface of the P type hydrogen-doped crystallization silicon layer. The back side transparent conductive film is deposited on the lower surface of the high doping P type amorphous silicon layer. The solar energy cell maintains good passivated effects to obtain a high open-circuit voltage, and reduces the whole series connection resistor to improve fill factors and improve the transition efficiency.
Description
Technical field
The utility model relates to a kind of heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon, belongs to heterojunction solar battery technical field.
Background technology
At present, the P type crystalline silicon of usining is made heterojunction solar battery device as substrate, what generally use is the upper and lower surface of amorphous silicon membrane (a-Si:H) the passivation crystalline silicon (substrate) of Intrinsical (intrinsic), the n+-a-Si:H that simultaneously adds doping forms emitter and p+-a-Si:H formation back surface field (BSF), but because the resistivity of plain intrinsic amorphous silicon thin-film material is larger, therefore after being made into battery, series resistance is larger, and fill factor, curve factor FF is lower, and battery conversion efficiency is not high.
Summary of the invention
Technical problem to be solved in the utility model is the defect that overcomes prior art, a kind of heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon is provided, it not only can keep good passivation effect, thereby acquisition high open circuit voltage, and can reduce the whole series resistance of solar cell, and then raising fill factor, curve factor, the conversion efficiency of raising solar cell.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon, it comprises that P type crystalline silicon substrate, N-type mix hydrogen crystallized silicon layer, heavy doping N-type amorphous silicon layer, front transparent conductive film layer, front electrode layer, P type and mix hydrogen crystallized silicon layer, heavy doping P type amorphous silicon layer, back side transparent conductive film layer and backplate layer, and P type crystalline silicon substrate has a positive and back side; N-type is mixed hydrogen crystallized silicon layer and is deposited on the front of P type crystalline silicon substrate; Heavy doping N-type amorphous silicon layer is deposited on N-type and mixes on the upper surface of hydrogen crystallized silicon layer; Front nesa coating is deposited upon on the upper surface of heavy doping N-type amorphous silicon layer; Front electrode layer is positioned on the upper surface of front transparent conductive film layer, and is electrically connected by this front transparent conductive film layer and heavy doping N-type amorphous silicon layer; P type is mixed hydrogen crystallized silicon layer and is deposited on the back side of P type crystalline silicon substrate; Heavy doping P type amorphous silicon layer is deposited on P type and mixes on the lower surface of hydrogen crystallized silicon layer; Back side nesa coating is deposited upon on the lower surface of heavy doping P type amorphous silicon layer; Backplate layer is positioned on the lower surface of back side transparent conductive film layer, and is electrically connected by this back side transparent conductive film layer and heavy doping P type amorphous silicon layer.
Further, described front electrode layer and/or backplate layer are silver-colored grid.
Further, described front transparent conductive film layer and/or back side transparent conductive film layer are ito thin film.
Further, the thickness of described P type crystalline silicon substrate is 90 ~ 300 μ m.
Further, the thickness that described N-type is mixed hydrogen crystallized silicon layer is 3 ~ 15nm, and energy gap is 1.2 ~ 1.4eV.
Further, the thickness of described heavy doping N-type amorphous silicon layer is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
Further, the thickness of described front transparent conductive film layer is 60 ~ 90nm.
Further, to mix the thickness of hydrogen crystallized silicon layer be 3 ~ 15nm to described P type.
Further, the thickness of described heavy doping P type amorphous silicon layer is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
Further, the thickness of described back side transparent conductive film layer is 80 ~ 150nm.
Adopt technique scheme, the utlity model has following beneficial effect:
1, the aluminum back surface field of this heterojunction solar battery is partly between P type crystalline silicon substrate (P-c-Si) and heavy doping P type amorphous silicon layer (p+-a-Si:H), inserts one deck P type and mixes hydrogen crystallized silicon layer (p-c-Si:H); The emitter part of heterojunction solar battery is between P type crystalline silicon substrate (P-c-Si) and heavy doping N-type amorphous silicon layer (n+-a-Si:H), insert one deck N-type and mix hydrogen crystallized silicon layer (n-c-Si:H), existence due to hydrogen atom, can passivation silicon chip surface, thus keep good passivation effect to obtain hetero-junction solar cell high open circuit voltage (Voc).
2, because P type is mixed, hydrogen crystallized silicon layer has been mixed boron atom as backside passivation layer and N-type is mixed hydrogen crystallized silicon layer as having mixed phosphorus atoms in the passivation layer of front, can reduce the resistance of passivation layer, thereby reduce whole solar cell series resistance, improve the fill factor, curve factor FF of solar cell, promote the conversion efficiency of heterojunction solar battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of mixing the heterojunction solar battery of hydrogen Crystallized Silicon passivation of the present utility model;
Fig. 2 is the fabrication processing figure that mixes the heterojunction solar battery of hydrogen Crystallized Silicon passivation of the present utility model.
Embodiment
For content of the present utility model is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail below,
As shown in Figure 1, a heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon, it comprises: P type crystalline silicon substrate 1, N-type are mixed hydrogen crystallized silicon layer 2, heavy doping N-type amorphous silicon layer 3, front transparent conductive film layer 4, front electrode layer 5, P type and mixed hydrogen crystallized silicon layer 6, heavy doping P type amorphous silicon layer 7, back side transparent conductive film layer 8 and backplate layer 9; It has a positive and back side P type crystalline silicon substrate 1; N-type is mixed hydrogen crystallized silicon layer 2 and is deposited on the front of P type crystalline silicon substrate 1; Heavy doping N-type amorphous silicon layer 3 is deposited on N-type and mixes on the upper surface of hydrogen crystallized silicon layer 2; Front transparent conductive film layer 4 is deposited on the upper surface of heavy doping N-type amorphous silicon layer 3; Front electrode layer 5 is positioned on the upper surface of front transparent conductive film layer 4, and is electrically connected by this front transparent conductive film layer 4 and heavy doping N-type amorphous silicon layer 3; P type is mixed hydrogen crystallized silicon layer 6 and is deposited on the back side of P type crystalline silicon substrate 1; Heavy doping P type amorphous silicon layer 7 is deposited on P type and mixes on the lower surface of hydrogen crystallized silicon layer 6; Back side transparent conductive film layer 8 is deposited on the lower surface of heavy doping P type amorphous silicon layer 7; Backplate layer 9 is positioned on the lower surface of back side transparent conductive film layer 8, and is electrically connected by this back side transparent conductive film layer 8 and heavy doping P type amorphous silicon layer 7.
Front electrode layer 5 and/or backplate layer 9 are silver-colored grid.
Front transparent conductive film layer 4 and/or back side transparent conductive film layer 8 are ito thin film.
The thickness of P type crystalline silicon substrate 1 is 90 ~ 300 μ m.
The thickness that N-type is mixed hydrogen crystallized silicon layer 2 is 3 ~ 15nm, and energy gap is 1.2 ~ 1.4eV.
The thickness of heavy doping N-type amorphous silicon layer 3 is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
The thickness of front transparent conductive film layer 4 is 60 ~ 90nm.
The thickness that P type is mixed hydrogen crystallized silicon layer 6 is 3 ~ 15nm.
The thickness of heavy doping P type amorphous silicon layer 7 is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
The thickness of back side transparent conductive film layer 8 is 80 ~ 150nm.
Operation principle of the present utility model is as follows:
The aluminum back surface field of this heterojunction solar battery is partly P type crystalline silicon substrate 1(P-c-Si) and heavy doping P type amorphous silicon layer 7(p+-a-Si:H) between, insert one deck P type and mix hydrogen crystallized silicon layer 6(p-c-Si:H); The emitter part of heterojunction solar battery is P type crystalline silicon substrate 1(P-c-Si) and heavy doping N-type amorphous silicon layer 3(n+-a-Si:H) between, insert one deck N-type and mix hydrogen crystallized silicon layer 2(n-c-Si:H), existence due to hydrogen atom, can passivation silicon chip surface, thus keep good passivation effect to obtain hetero-junction solar cell high open circuit voltage (Voc); In addition, because P type is mixed, hydrogen crystallized silicon layer 6 has been mixed boron atom as backside passivation layer and N-type is mixed hydrogen crystallized silicon layer 2 as having mixed phosphorus atoms in the passivation layer of front, can reduce the resistance of passivation layer, thereby reduce whole solar cell series resistance, improve the fill factor, curve factor FF of solar cell, promote the conversion efficiency of heterojunction solar battery.
A kind of fabrication processing of this heterojunction solar battery device is as follows:
Adopt the P type crystalline silicon of approximately 200 microns of thickness through RCA cleaning, making herbs into wool and the hydrofluoric acid treatment of standard, in the front of P type crystalline silicon substrate 1, by pecvd process, deposit one deck N-type and mix hydrogen crystallized silicon layer 2, the about 3-15nm of thickness, passivation P type crystalline silicon substrate 1 surface, reduce recombination-rate surface, obtain good interfacial characteristics; Deposit again one deck heavy doping N-type amorphous silicon layer 3, thickness is 10-30nm, then at the back side of P type crystalline silicon substrate 1, by pecvd process, deposits P type and mix hydrogen crystallized silicon layer 6, and typical thickness is 3-15nm, finally deposit one deck heavy doping P type amorphous silicon layer 7, thickness is 10-30nm.After aforementioned body battery structure completes, by methods such as sputter or evaporations, upper and lower surface at said structure adopts ito thin film to deposit respectively front transparent conductive film layer 4 and back side transparent conductive film layer 8, use again low-temperature silver slurry in upper and lower surface silk screen printing, through low temperature sintering technology, obtain silver-colored grid, complete the making of this heterogeneous solar cell.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the utility model is solved further describe; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. a heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon, is characterized in that, it comprises:
One P type crystalline silicon substrate (1), it has a positive and back side;
One N-type is mixed hydrogen crystallized silicon layer (2), is deposited on the front of P type crystalline silicon substrate (1);
One heavy doping N-type amorphous silicon layer (3), is deposited on N-type and mixes on the upper surface of hydrogen crystallized silicon layer (2);
One front transparent conductive film layer (4), is deposited on the upper surface of heavy doping N-type amorphous silicon layer (3);
One front electrode layer (5), is positioned on the upper surface of front transparent conductive film layer (4), and is electrically connected by this front transparent conductive film layer (4) and heavy doping N-type amorphous silicon layer (3);
One P type is mixed hydrogen crystallized silicon layer (6), is deposited on the back side of P type crystalline silicon substrate (1);
One heavy doping P type amorphous silicon layer (7), is deposited on P type and mixes on the lower surface of hydrogen crystallized silicon layer (6);
One back side transparent conductive film layer (8), is deposited on the lower surface of heavy doping P type amorphous silicon layer (7);
One backplate layer (9), is positioned on the lower surface of back side transparent conductive film layer (8), and is electrically connected by this back side transparent conductive film layer (8) and heavy doping P type amorphous silicon layer (7).
2. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: described front electrode layer (5) and/or backplate layer (9) are silver-colored grid.
3. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1 and 2, is characterized in that: described front transparent conductive film layer (4) and/or back side transparent conductive film layer (8) are ito thin film.
4. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness of described P type crystalline silicon substrate (1) is 90 ~ 300 μ m.
5. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness that described N-type is mixed hydrogen crystallized silicon layer (2) is 3 ~ 15nm, and energy gap is 1.2 ~ 1.4eV.
6. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness of described heavy doping N-type amorphous silicon layer (3) is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
7. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness of described front transparent conductive film layer (4) is 60 ~ 90nm.
8. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness that described P type is mixed hydrogen crystallized silicon layer (6) is 3 ~ 15nm.
9. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness of described heavy doping P type amorphous silicon layer (7) is 10 ~ 30nm, and energy gap is 1.7 ~ 1.9eV.
10. the heterojunction solar battery of mixing the passivation of hydrogen Crystallized Silicon according to claim 1, is characterized in that: the thickness of described back side transparent conductive film layer (8) is 80 ~ 150nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420015111.5U CN203871345U (en) | 2014-01-10 | 2014-01-10 | Hydrogen-doped crystallization silicon passivated heterojunction solar energy cell |
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| CN201420015111.5U CN203871345U (en) | 2014-01-10 | 2014-01-10 | Hydrogen-doped crystallization silicon passivated heterojunction solar energy cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730532A (en) * | 2014-01-10 | 2014-04-16 | 常州天合光能有限公司 | Hydrogen-doped crystallized silicon passivated heterojunction solar cell |
| CN111916523A (en) * | 2019-05-07 | 2020-11-10 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell, assembly thereof and preparation method |
-
2014
- 2014-01-10 CN CN201420015111.5U patent/CN203871345U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730532A (en) * | 2014-01-10 | 2014-04-16 | 常州天合光能有限公司 | Hydrogen-doped crystallized silicon passivated heterojunction solar cell |
| CN111916523A (en) * | 2019-05-07 | 2020-11-10 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell, assembly thereof and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141008 |