CN207637824U - A kind of efficient crystal silicon/non crystal heterogeneous agglomeration battery structure - Google Patents
A kind of efficient crystal silicon/non crystal heterogeneous agglomeration battery structure Download PDFInfo
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- CN207637824U CN207637824U CN201721704101.2U CN201721704101U CN207637824U CN 207637824 U CN207637824 U CN 207637824U CN 201721704101 U CN201721704101 U CN 201721704101U CN 207637824 U CN207637824 U CN 207637824U
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- transparent conductive
- indium tin
- conductive film
- tin oxide
- film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of crystal silicon/non crystal heterogeneous agglomeration battery structures.It includes front metal electrode and back metal electrode,Front indium tin oxide transparent conductive film is disposed between front metal electrode and back metal electrode,Lower front indium tin oxide transparent conductive film,Positive N-type amorphous silicon membrane and front intrinsic amorphous silicon film,N-type crystalline silicon backside of substrate intrinsic amorphous silicon film,Back side P-type non-crystalline silicon film and back side indium tin oxide transparent conductive film,The thickness of upper front indium tin oxide transparent conductive film is less than the thickness of lower front indium tin oxide transparent conductive film,After above-mentioned structure,Realize the optimization of HJT batteries,Improve the transfer efficiency of HJT batteries,Not only making permeability and electric conductivity realizes optimization,And improve contact resistance with silver metal electrodes,Improve absorption of the film layer to light,Make light transmittance be improved significantly,Also the FF performances of cell piece is made to be greatly improved.
Description
Technical field
The utility model is related to a kind of crystal silicon/non crystal heterogeneous agglomeration battery structures, belong to solar cell manufacturing technology neck
Domain.
Background technology
With the development of solar battery technology, the exploitation of high-efficiency battery is increasingly paid attention to.Wherein use amorphous silicon intrinsic
Layer（a-Si:The silicon substrate heterojunction solar cell of H (i) passivation（HJT batteries are one of research directions of emphasis.It is well known that silicon
Base heterojunction solar cell not only has high transformation efficiency, high open-circuit voltage, but also declines with low temperature coefficient, without photic
Subtract（LID, without electroluminescent decaying（The advantages such as PID, low preparation process temperature.In addition silicon based hetero-junction battery is ensureing high conversion effect
While rate, silicon wafer thickness can be thinned to 100 μm, effectively reduce silicon material consumption, and can be used to prepare flexible battery component.
For the existing HJT batteries, since structure design is unreasonable, have so that non-crystalline silicon is led in HJT batteries
It is electrically bad or make translucency poor, although in the prior art can be saturating by select conductive film as regulating measure
It crosses rate and sheet resistance is two different debugging directions can not improve translucency and electric conductivity simultaneously, so how to realize while having
Translucency and electric conductivity are a problems for needing to solve at present.
Invention content
The technical problem to be solved by the present invention is to provide a kind of conversion effects for being not only able to further promote HJT batteries
Rate but also crystal silicon/non crystal heterogeneous agglomeration battery structure that permeability and electric conductivity realization can be made to optimize.
In order to solve the above-mentioned technical problem, the crystal silicon of the utility model/non crystal heterogeneous agglomeration battery structure, including be located at just
The front metal electrode in face and back metal electrode positioned at the back side, are provided between front metal electrode and back metal electrode
N-type crystalline silicon substrate is disposed with front indium tin oxidation from top to bottom between front metal electrode and N-type crystalline silicon substrate
Object transparent conductive film, lower front indium tin oxide transparent conductive film, positive N-type amorphous silicon membrane and front intrinsic amorphous silicon
Film is disposed with back side intrinsic amorphous silicon film, the back side from top to bottom between N-type crystalline silicon substrate and back metal electrode
P-type non-crystalline silicon film and back side indium tin oxide transparent conductive film, the thickness of upper front indium tin oxide transparent conductive film
Thickness of the degree less than lower front indium tin oxide transparent conductive film.
The front metal electrode and back metal electrode are silver electrode, the silver electrode include main gate line and with master
The quantity of the secondary grid line of grid line vertical distribution, the main gate line is 4-18, and the width of main gate line is 0.8-1.2mm, secondary grid line
Quantity is 80-200, and the width of secondary grid line is 30-80 μm.
The sheet resistance of the upper front indium tin oxide transparent conductive film is 20-50 Ω/, and lower front indium tin oxide is saturating
The sheet resistance of bright conductive film is 80-110 Ω/, and the thickness of the upper front indium tin oxide transparent conductive film is 10-20
The thickness of nm, the lower front indium tin oxide transparent conductive film are 60-90 nm.
The sheet resistance of the back side indium tin oxide transparent conductive film is 45-65 Ω/, and the back side indium tin oxide is saturating
The thickness of bright conductive film is 70-90nm.
The thickness of the front N-type amorphous silicon membrane is 5-30nm, and the thickness of the back side P-type non-crystalline silicon film is 5-
20nm。
The thickness of the front intrinsic amorphous silicon film and back side intrinsic amorphous silicon film is 5-20nm.
Square monocrystalline silicon piece subject to the shape of the N-type crystalline silicon substrate, thickness are 170-200 μm.
After above-mentioned structure, since its each layer is reasonable in design, do not increasing extras and material cost
Under the premise of, the optimization of HJT batteries is realized, the transfer efficiency of HJT batteries is improved, use is superimposed in front two layers is transparent to be led
The thickness of conductive film and upper front indium tin oxide transparent conductive film is less than lower front indium tin oxide transparent conductive film
Thickness, improve the permeability of light and the electric conductivity of film, make between the photopermeability of transparent conductive film and electric conductivity
Optimal balance has been arrived, and has played the role of being greatly promoted to the raising of efficiency, front indium tin oxide is gone up in addition, combining
Transparent conductive film controls electric conductivity using low square resistance, and lower front indium tin oxide transparent conductive film is saturating using high square resistance control
The technical solution for the property crossed, not only making permeability and electric conductivity realizes optimization, and improves and connect with silver metal electrodes
Get an electric shock resistance, improve absorption of the film layer to light, make light transmittance be improved significantly, so that the FF performances of cell piece is obtained greatly
It improves.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model crystal silicon/non crystal heterogeneous agglomeration battery structure.
Specific implementation mode
With reference to the accompanying drawings and detailed description, the crystal silicon of the utility model/non crystal heterogeneous agglomeration battery structure is made
It is further described.
As shown, the crystal silicon of the utility model/non crystal heterogeneous agglomeration battery structure, including it is located at positive front metal
Electrode 1 and back metal electrode 10 positioned at the back side, N-C-Si is provided between front metal electrode 1 and back metal electrode 10
N-type crystalline silicon substrate 6 is disposed with front indium tin from top to bottom between front metal electrode 1 and N-type crystalline silicon substrate 6
Oxide（ITO）Transparent conductive film 2, lower front indium tin oxide（ITO）Transparent conductive film 3, the fronts N-a-Si N-type amorphous
Silicon thin film 4 and the fronts i-a-Si intrinsic amorphous silicon film 5, upper front indium tin oxide（ITO）Transparent conductive film 2 and lower front
Indium tin oxide（ITO）Transparent conductive film 3 forms the overlaying structure of light-receiving surface, N-C-Si N-type crystalline silicons substrate 6 and the back side
The back sides i-a-Si intrinsic amorphous silicon film 7, the back sides P-a-Si P-type non-crystalline silicon are disposed between metal electrode 10 from top to bottom
Film 8 and back side indium tin oxide（ITO）Transparent conductive film 9, the thickness of upper front indium tin oxide transparent conductive film 2
Less than the thickness of lower front indium tin oxide transparent conductive film 3.
Further, described front metal electrode 1 and back metal electrode 10 are silver electrode, and realization method is silk
Wire mark brush, silver electrode include main gate line and the secondary grid line with main gate line vertical distribution, and the quantity of main gate line is 4-18, main gate line
Width be 0.8-1.2mm, the quantity of secondary grid line is 80-200, and the width of secondary grid line is 30-80 μm, further passes through sintering
Mode realizes solidification silver electrode, realizes the Ohmic contact between silver metal and transparent conductive film；Upper front indium tin oxide（ITO）
Transparent conductive film 2 and lower front indium tin oxide（ITO）Its realization method of transparent conductive film 3 is magnetron sputtering, here ITO
The mass fraction that SnO2 is mixed in film is 0-10 wt%, and the sheet resistance of upper front indium tin oxide transparent conductive film 2 is 20-50
The sheet resistance of Ω/, lower front indium tin oxide transparent conductive film 3 are 80-110 Ω/, and upper front indium tin oxide is transparent to lead
The thickness of conductive film 2 is 10-20 nm, and the thickness of lower front indium tin oxide transparent conductive film 3 is 60-90 nm, back side indium
The sheet resistance of tin oxide transparent conductive film 9 is 45-65 Ω/, and the thickness of back side indium tin oxide transparent conductive film 9 is
The thickness of 70-90nm, positive N-type amorphous silicon membrane 4 are 5-30nm, and the thickness of back side P-type non-crystalline silicon film 8 is 5-20nm, just
The thickness of face intrinsic amorphous silicon film 4 and back side intrinsic amorphous silicon film 5 is 5-20nm, and the shape of N-type crystalline silicon substrate 6 is
The monocrystalline silicon piece of quasi- side, thickness are 170-200 μm.
It should be noted that especially by upper front indium tin oxide（ITO）The low square resistance and film layer of transparent conductive film
The design of thinning makes the FF performances of cell piece be greatly improved so as to improve the contact resistance with silver metal electrodes；It is logical
Cross down front indium tin oxide（ITO）The design that transparent conductive film has high sheet resistance and film layer relatively thick, so as to improve
Absorption of the film layer to light, make light transmittance be improved significantly, from there through the structure design of lamination ito thin film can be further
Improve the permeability of light and the electric conductivity of film, and plays the role of being greatly promoted to the raising of efficiency.
Claims (7)
1. a kind of crystal silicon/non crystal heterogeneous agglomeration battery structure, including it is located at positive front metal electrode（1）With positioned at the back side
Back metal electrode（10）, it is characterised in that：The front metal electrode（1）With back metal electrode（10）Between be provided with N
Type crystalline silicon substrates（6）, the front metal electrode（1）With N-type crystalline silicon substrate（6）Between be disposed with from top to bottom
Front indium tin oxide transparent conductive film（2）, lower front indium tin oxide transparent conductive film（3）, positive N-type non-crystalline silicon it is thin
Film（4）With front intrinsic amorphous silicon film（5）, the N-type crystalline silicon substrate（6）With back metal electrode（10）Between from up to
Under be disposed with back side intrinsic amorphous silicon film（7）, back side P-type non-crystalline silicon film（8）And back side indium tin oxide is transparent
Conductive film（9）, the upper front indium tin oxide transparent conductive film（2）Thickness be less than lower front indium tin oxide it is transparent
Conductive film（3）Thickness.
2. crystal silicon described in accordance with the claim 1/non crystal heterogeneous agglomeration battery structure, it is characterised in that：The front metal electricity
Pole（1）With back metal electrode（10）Be silver electrode, the silver electrode include main gate line and with main gate line vertical distribution
The quantity of secondary grid line, the main gate line is 4-18, and the width of main gate line is 0.8-1.2mm, and the quantity of secondary grid line is 80-200, secondary
The width of grid line is 30-80 μm.
3. according to crystal silicon as claimed in claim 1 or 2/non crystal heterogeneous agglomeration battery structure, it is characterised in that：The upper front indium
Tin oxide transparent conductive film（2）Sheet resistance be 20-50 Ω/, lower front indium tin oxide transparent conductive film（3）Side
Resistance is 80-110 Ω/, the upper front indium tin oxide transparent conductive film（2）Thickness be 10-20 nm, it is described it is lower just
Face indium tin oxide transparent conductive film（3）Thickness be 60-70 nm.
4. crystal silicon described in accordance with the claim 3/non crystal heterogeneous agglomeration battery structure, it is characterised in that：The back side indium tin oxygen
Compound transparent conductive film（9）Sheet resistance be 45-65 Ω/, the back side indium tin oxide transparent conductive film（9）Thickness
For 70-90nm.
5. crystal silicon/non crystal heterogeneous agglomeration battery structure according to claim 4, it is characterised in that：The front N-type amorphous
Silicon thin film（4）Thickness be 5-30nm, the back side P-type non-crystalline silicon film（8）Thickness be 5-20nm.
6. crystal silicon/non crystal heterogeneous agglomeration battery structure according to claim 5, it is characterised in that：The front is intrinsic non-
Polycrystal silicon film（4）With back side intrinsic amorphous silicon film（5）Thickness be 5-20nm.
7. crystal silicon/non crystal heterogeneous agglomeration battery structure according to claim 6, it is characterised in that：The N-type crystalline silicon base
Bottom（6）Shape subject to square monocrystalline silicon piece, thickness is 170-200 μm.
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| CN201721704101.2U CN207637824U (en) | 2017-12-11 | 2017-12-11 | A kind of efficient crystal silicon/non crystal heterogeneous agglomeration battery structure |
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| CN201721704101.2U CN207637824U (en) | 2017-12-11 | 2017-12-11 | A kind of efficient crystal silicon/non crystal heterogeneous agglomeration battery structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212060A (en) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | A kind of battery preparation method, battery, battery component and solar powered station |
| CN112864283A (en) * | 2019-11-08 | 2021-05-28 | 福建钜能电力有限公司 | Process method for improving electrical performance of heterojunction solar cell |
-
2017
- 2017-12-11 CN CN201721704101.2U patent/CN207637824U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212060A (en) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | A kind of battery preparation method, battery, battery component and solar powered station |
| CN110212060B (en) * | 2019-05-21 | 2021-12-10 | 苏州联诺太阳能科技有限公司 | Battery preparation method, battery assembly and solar power supply station |
| CN112864283A (en) * | 2019-11-08 | 2021-05-28 | 福建钜能电力有限公司 | Process method for improving electrical performance of heterojunction solar cell |
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