CN208000925U - A kind of solar cell - Google Patents
A kind of solar cell Download PDFInfo
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- CN208000925U CN208000925U CN201721848380.XU CN201721848380U CN208000925U CN 208000925 U CN208000925 U CN 208000925U CN 201721848380 U CN201721848380 U CN 201721848380U CN 208000925 U CN208000925 U CN 208000925U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model is related to technical field of solar batteries, the particularly higher solar cell of short circuit current.The utility model discloses a kind of solar cells, including substrate, the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, N-shaped amorphous silicon film layer, the first TCO film layers, the 2nd TCO film layers and p-type carbon silicon film, the first of the substrate, which faces out lamination successively, the first intrinsic amorphous silicon layer, p-type carbon silicon film and the first TCO film layers, and the second of the substrate, which faces out lamination successively, the second intrinsic amorphous silicon layer, N-shaped amorphous silicon film layer and the 2nd TCO film layers.Solar cell provided by the utility model can get higher short circuit current, therefore improve the performance of solar cell.
Description
Technical field
The utility model is related to technical field of solar batteries, the particularly higher solar cell of short circuit current.
Background technology
Solar energy can be converted directly into electric energy by solar cell, therefore as new energy source by more and more multinational
The attention of family.
Heterojunction with Intrinsic Thin layer solar cell abbreviation HIT solar cells,
It is invented by Sanyo earliest, is the solar cell of non-crystalline silicon/silicon/crystalline silicon heterojunction, be it is a kind of utilize crystalline silicon substrate
With mixed type solar battery made of amorphous silicon membrane.It is low since HIT solar cells have high photoelectric conversion efficiency
Temperature coefficient and technology of preparing under the conditions of relative low temperature become the emphasis side of photovoltaic industry research and development in recent years
One of to.The efficiency of the HIT solar cells of Sanyo's industrialization of Japan is more than 23% at present, and Laboratory efficiencies are
It has been more than 25%.
Fig. 1 show the structural schematic diagram of existing HIT solar cells.In Fig. 1, by monocrystalline silicon, polysilicon etc.
Crystallization based semiconductor constitute N-shaped crystal class silicon substrate 1 an interarea on, the first intrinsic amorphous silicon layer 2, p-type non-crystalline silicon
3 lamination successively of layer, and then be formed on transparent conductive oxide layer and constituted as the first TCO film layers 6 and by silver paste printing
Combed shape gate electrode 8;The second intrinsic amorphous silicon layer of lamination 4, n successively on another interarea of crystal class silicon substrate 1
Type amorphous silicon layer 5, and then be formed on transparent conductive oxide layer and constituted as the 2nd TCO film layers 7 and by silver paste printing
Combed shape gate electrode 8.
Since the translucency of amorphous silicon film layer is poor, so in the manufacturing process of HIT, the thickness of amorphous silicon film layer will
The ratio asked is relatively thin, but thickness it is too thin amorphous silicon film layer it is bad to the passivation effect of substrate surface, while being also unfavorable for current-carrying
Son generation and collection, it is therefore desirable on the surface of cell piece formed one layer of translucency it is good and be conducive to the generation of carrier and
The film layer of collection.
Invention content
The purpose of this utility model is that solve the problems, such as above-mentioned existing HIT solar battery technologies, carry
More light can be made to enter in substrate through film layer for one kind to be absorbed by substrate, the short circuit current of solar cell is made to obtain
To raising, to enhance solar cell performance solar cell.
For this purpose, the utility model discloses a kind of solar cell, including substrate, the first intrinsic amorphous silicon layer, second
Sign amorphous silicon layer, N-shaped amorphous silicon film layer, the first TCO film layers, the 2nd TCO film layers and p-type carbon silicon film, the first of the substrate
Facing out lamination successively has the first intrinsic amorphous silicon layer, p-type carbon silicon film and a first TCO film layers, the substrate second towards
Lamination has the second intrinsic amorphous silicon layer, N-shaped amorphous silicon film layer and the 2nd TCO film layers successively outside.
Further, the p-type carbon silicon film be p-type amorphous carbon silicon film, p-type crystallite state carbon silicon film or they
Stack combinations.
Further, the substrate is monocrystalline silicon piece or polysilicon chip;First intrinsic amorphous silicon layer is hydrogenation first
Intrinsic amorphous silicon layer, second intrinsic amorphous silicon layer are the second intrinsic amorphous silicon layer of hydrogenation, and the N-shaped amorphous silicon film layer is hydrogen
Change N-shaped amorphous silicon film layer.
Further, the p-type carbon silicon film is made of one or more layers, and the p-type carbon silicon film is hydrogenation p-type carbon silicon
Film layer.
Further, it is respectively arranged with gate line electrode in the first TCO film layers and the 2nd TCO film layers.
Further, it is provided with gate line electrode in the first TCO film layers, metal is formed in the 2nd TCO film layers
Film layer, the metallic diaphragm cover most of region of the 2nd TCO film layers, and the metallic diaphragm is one or more layers.
Further, the metallic diaphragm is gold, silver, copper, chromium, nickel, aluminium or combination thereof layer.
Further, the gate line electrode is silver grating line electrode, copper gate line electrode or combination thereof.
Further, one layer of p-type amorphous silicon film layer is equipped between the described first intrinsic amorphous silicon film layer and p-type carbon silicon film
And/or p-type microcrystal silicon film layer.
Further, the p-type amorphous silicon film layer is hydrogenation p-type amorphous silicon film layer, and the p-type microcrystal silicon film layer is hydrogen
Change p-type microcrystal silicon film layer.
Further, the first TCO film layers are equipped with an antireflection film layer and/or the 2nd TCO film layers are equipped with
One antireflection film layer, the antireflection film layer are made of one or more layers.
The first TCO film layers and the 2nd TCO film layers are AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO
Film layer, ito film layer, ITIO film layers, IWO film layers, ICO film layers, IMO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer,
Tin oxide mixes antimony film layer or graphene film layer, can contain hydrogen in the first TCO film layers and the 2nd TCO film layers.
The beneficial effects of the utility model:
The utility model is conducive to increase incident light and is incident on substrate, to which electricity can be improved by using p-type carbon silicon film
The short circuit current in pond;P-type carbon silicon film can be made to realize good Ohmic contact with TCO film layers again simultaneously, reduce the electricity of battery
Resistance;Antireflection film layer is set in TCO film layers and can further improve the amount of incident of incident light, thus can further improve battery
Short circuit current;To improve the performance of solar cell.
Description of the drawings
Fig. 1 is a kind of existing structural schematic diagram of HIT solar cells;
Fig. 2 is a kind of structural schematic diagram of solar cell of the utility model;
Fig. 3 is the structural schematic diagram of another solar cell of the utility model.
Specific implementation mode
The utility model is further illustrated in conjunction with the drawings and specific embodiments.
First illustrate herein, it refers to oxygen that the ITO in the utility model, which refers to the transparent conductive material of indium-doped tin oxide, ITIO,
Transparent conductive material, the ICO for changing indium doping titanium refer to that transparent conductive material, the AZO of oxidation indium doping cerium refer to Zinc oxide doped
It refers to the transparent of Zinc oxide doped boron that transparent conductive material, the IWO of aluminium, which refer to the transparent conductive material of indium oxide Doped Tungsten, BZO,
It refers to the electrically conducting transparent material of Zinc oxide doped indium gallium that conductive material, GZO, which refer to the transparent conductive material of Zinc oxide doped gallium, IGZO,
Material, IZO refer to the transparent conductive material that the transparent conductive material of Zinc oxide doped indium, IMO refer to indium oxide doping molybdenum;This practicality
Novel described carbon silicon film is SiCx(0<x<1) film layer;Described " most of region " refers to that accounting reaches in the utility model
3/5ths or more region.
As shown in Fig. 2, a kind of solar cell, including substrate 1, the first intrinsic amorphous silicon layer 2, the second intrinsic amorphous silicon layer
4, N-shaped amorphous silicon film layer 5, the first TCO film layers 6, the 2nd TCO film layers 7 and p-type carbon silicon film 31, the substrate 1 first towards
Lamination has the first intrinsic amorphous silicon layer 2, p-type carbon silicon film 31 and a first TCO film layers 6 successively outside, the substrate 1 second towards
Lamination has the second intrinsic amorphous silicon layer 4, N-shaped amorphous silicon film layer 5 and the 2nd TCO film layers 7,6 He of the first TCO film layers successively outside
It is respectively arranged with gate line electrode 8 in 2nd TCO film layers 7.
Certainly, in other embodiments, can also be that gate line electrode 8 is provided in the first TCO film layers 6, described
Metallic diaphragm is formed in two TCO film layers 7, the metallic diaphragm covers most of region of the 2nd TCO film layers 7, the metal
Film layer can be one or more layers structure.Gold, silver, copper, chromium, nickel, aluminium layer or combination thereof may be used in the metallic diaphragm
Layer.
Specifically, the p-type carbon silicon film 31 is p-type amorphous carbon silicon film, certainly, in other embodiments, p-type carbon
Silicon film 31 can also be p-type crystallite state carbon silicon film or by p-type amorphous carbon silicon film and p-type crystallite state carbon silicon fiml layer laminate
The composite layer of composition, as shown in figure 3, p-type carbon silicon film 31 includes that the p-type amorphous carbon silicon film 311 being stacked and p-type are micro-
Crystalline state carbon silicon film 312.
The p-type carbon silicon film 31 can be made of one or more layers, when the p-type carbon silicon film 31 is made of multilayer
Its each layer phosphorus content is different.
Further, the p-type carbon silicon film 31 can be hydrogenation p-type carbon silicon film.
Specifically, the substrate 1 is monocrystalline silicon piece or polysilicon chip;First intrinsic amorphous silicon layer 2 is hydrogenation first
Intrinsic amorphous silicon layer, second intrinsic amorphous silicon layer 4 are the second intrinsic amorphous silicon layer of hydrogenation, and the N-shaped amorphous silicon film layer 5 is
Hydrogenate N-shaped amorphous silicon layer.
Specifically, the gate line electrode 8 is silver grating line electrode, copper gate line electrode or combination thereof, the first TCO films
Layer 6 and the 2nd TCO film layers 7 be AZO film layers, GZO film layers, IGZO film layers, BZO film layers, IZO film layers, ito film layer, ITIO film layers,
IWO film layers, ICO film layers, IMO film layers, tin oxide fluorine doped film layer, tin oxide mix iodine film layer, tin oxide mixes antimony film layer or graphene
Film layer can contain hydrogen in the first TCO film layers 6 and the 2nd TCO film layers 7.
It further, in other embodiments, can between the described first intrinsic amorphous silicon film layer 2 and p-type carbon silicon film 31
To be equipped with p-type amorphous silicon film layer and/or p-type microcrystal silicon film layer, it is preferred that the p-type amorphous silicon film layer is hydrogenation p-type non-crystalline silicon
Film layer, the p-type microcrystal silicon film layer are hydrogenation p-type microcrystal silicon film layer.
Further, in other embodiments, an antireflection film layer and/or institute are additionally provided in the first TCO film layers 6
It states and is additionally provided with an antireflection film layer in the 2nd TCO film layers 7, the antireflection film layer is made of one or more layers.
First intrinsic amorphous film layer 2, the second intrinsic amorphous silicon film layer 4, N-shaped amorphous silicon film layer 5, p-type amorphous silicon film layer, p
The methods of PECVD, filament CVD deposition may be used in type carbon silicon film 31, the first TCO film layers 6, the 2nd TCO film layers 7 and subtracts
The methods of PVD method, RPD methods, vapour deposition method, ALD method, chemical vapour deposition technique deposition may be used in reflective coating, and crystal silicon substrate 1 exists
It is that the surface of crystal silicon substrate to be made to form matte through the processing of the solution such as peracid, alkali before depositional coating.
It will illustrate the solar cell of the utility model by several specific embodiments below.In following embodiment,
It is to be sequentially depositing upper each film layer on crystal silicon substrate surface clean after making herbs into wool.
Embodiment 1
Prepare n type single crystal silicon piece 1, thickness is 180 μm, and PECVD is then used on the first face of n type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 8nm and the p-type Amorphous GaN of 10nm0.5Film layer 31;Then in n type single crystal silicon piece 1
The second face on the second intrinsic amorphous silicon film layer 4 of 8nm, the N-shaped amorphous silicon film layer 5 of 15nm be sequentially depositing using PECVD;It connects
It using sputtering method in p-type Amorphous GaN0.5The ito film layer of 100nm is deposited in film layer 31 as the first TCO film layers 6;Then it uses
Sputtering method deposits the ito film layer of 100nm as the 2nd TCO film layers 7 in N-shaped amorphous silicon film layer 5;Then silk screen print method is used
The type metal gate electrode 8 in the first TCO film layers 6 and the 2nd TCO film layers 7, the material to print electrode is using silver paste, then
The gate electrode 8 that cell piece is placed in the environment of 200 DEG C to printing is made annealing treatment, solar cell is thus made.Finally
Solar cell is tested, it is 39.6mA/cm to measure its short circuit current2.Solar battery structure is as shown in Figure 2.
Embodiment 2
Prepare n type single crystal silicon piece 1, thickness is 180 μm, and PECVD is then used on the first face of n type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 5nm, the p-type Amorphous GaN of 4nm0.2The p-type crystallite SiC of film layer 311 and 6nm0.6
Film layer 312;Then the second intrinsic amorphous silicon film of 8nm is sequentially depositing using PECVD on the second face of n type single crystal silicon piece 1
The N-shaped amorphous silicon film layer 5 of layer 4,15nm;Then use RPD methods in p-type crystallite SiC0.6The IWO films of 100nm are deposited in film layer 312
Layer is used as the first TCO film layers 6;Then the IWO film layers of 100nm are deposited as second in N-shaped amorphous silicon film layer 5 using RPD methods
TCO film layers 7;Then silk screen print method type metal gate electrode 8 in the first TCO film layers 6 and the 2nd TCO film layers 7, printing are used
The material of electrode then carries out the gate electrode 8 that cell piece is placed in the environment of 200 DEG C to printing at annealing using silver paste
Thus solar cell is made in reason.Finally solar cell is tested, it is 40.1mA/cm to measure its short circuit current2.Too
Positive energy battery structure is as shown in Figure 3.
Embodiment 3
Prepare n type single crystal silicon piece 1, thickness is 150 μm, and PECVD is then used on the first face of n type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 10nm, the p-type Amorphous GaN of 5nm0.1The p-type Amorphous GaN of film layer 31 and 6nm0.9
Film layer 31;Then the second intrinsic amorphous silicon film of 10nm is sequentially depositing using PECVD on the second face of n type single crystal silicon piece 1
The N-shaped amorphous silicon film layer 5 of layer 4,20nm;Then use RPD methods in p-type Amorphous GaN0.9The IWO films of 100nm are deposited in film layer 31
Layer is used as the first TCO film layers 6;Then the IWO film layers of 100nm are deposited as second in N-shaped amorphous silicon film layer 5 using RPD methods
TCO film layers 7;Then silk screen print method type metal gate electrode 8 in the first TCO film layers 6 and the 2nd TCO film layers 7, printing are used
The material of electrode then carries out the gate electrode 8 that cell piece is placed in the environment of 200 DEG C to printing at annealing using silver paste
Thus solar cell is made in reason.Finally solar cell is tested, it is 39.3mA/cm to measure its short circuit current2。
Embodiment 4
Prepare n type single crystal silicon piece 1, thickness is 150 μm, and PECVD is then used on the first face of n type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 5nm, the p-type Amorphous GaN of the p-type amorphous silicon film layer of 5nm and 6nm0.7Film layer 31;
Then the second intrinsic amorphous silicon film layer 4 of 5nm, 20nm are sequentially depositing using PECVD on the second face of n type single crystal silicon piece 1
N-shaped amorphous silicon film layer 5;Then use sputtering method in p-type Amorphous GaN0.7The ITIO film layer conducts of 100nm are deposited in film layer 31
First TCO film layers 6;Then the ITIO film layers of 100nm are deposited as the 2nd TCO films in N-shaped amorphous silicon film layer 5 using sputtering method
Layer 7;Then silk screen print method type metal gate electrode 8 in the first TCO film layers 6 and the 2nd TCO film layers 7 is used, is printed electrode
Material using silver paste, then the gate electrode 8 that cell piece is placed in the environment of 200 DEG C to printing is made annealing treatment,
Thus solar cell is made.Finally solar cell is tested, it is 39.3mA/cm to measure its short circuit current2。
Embodiment 5
Prepare p type single crystal silicon piece 1, thickness is 180 μm, and PECVD is then used on the first face of p type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 8nm and the p-type crystallite SiC of 12nm0.4Film layer 31;Then in p type single crystal silicon piece 1
The second face on the second intrinsic amorphous silicon film layer 4 of 8nm, the N-shaped amorphous silicon film layer 5 of 20nm be sequentially depositing using PECVD;It connects
It using sputtering method in p-type crystallite SiC0.4The ito film layer of 100nm is deposited in film layer 31 as the first TCO film layers 6;Then it uses
Sputtering method deposits the ito film layer of 100nm as the 2nd TCO film layers 7 in N-shaped amorphous silicon film layer 5;Then silk screen print method is used
The type metal gate electrode 8 in the first TCO film layers 6 and the 2nd TCO film layers 7, the material to print electrode is using silver paste, then
The gate electrode 8 that cell piece is placed in the environment of 200 DEG C to printing is made annealing treatment, solar cell is thus made.Finally
Solar cell is tested, it is 37.8mA/cm to measure its short circuit current2。
Comparative example 1
Prepare n type single crystal silicon piece 1, thickness is 180 μm, and PECVD is then used on the first face of n type single crystal silicon piece 1
It is sequentially depositing the first intrinsic amorphous silicon film layer 2 of 8nm and the p-type amorphous silicon film layer 3 of 10nm;Then the of n type single crystal silicon piece 1
The second intrinsic amorphous silicon film layer 4 of 8nm, the N-shaped amorphous silicon film layer 5 of 15nm are sequentially depositing using PECVD on two faces;Then it adopts
Sputtering method is used to deposit the ito film layer of 100nm in p-type amorphous silicon film layer 3 as the first TCO film layers 6;Then existed using sputtering method
The ito film layer of 100nm is deposited in N-shaped amorphous silicon film layer 5 as the 2nd TCO film layers 7;Then use silk screen print method first
Type metal gate electrode 8 in TCO film layers 6 and the 2nd TCO film layers 7, the material to print electrode is using silver paste, then by battery
The gate electrode 8 that piece is placed in the environment of 200 DEG C to printing makes annealing treatment, and solar cell is thus made.Finally to the sun
Energy battery is tested, and it is 37.6mA/cm to measure its short circuit current2.Solar battery structure is as shown in Figure 1.
Can be seen that the utility model from the comparison of above-described embodiment and comparative example 1 can promote the short circuit of solar cell
Electric current, thus the performance of solar cell can be improved.
Although specifically showing and describing the utility model in conjunction with preferred embodiment, those skilled in the art answers
This is understood, in the spirit and scope for not departing from the utility model defined by the appended claims, in form and details
On the utility model can be made a variety of changes, be the scope of protection of the utility model.
Claims (10)
1. a kind of solar cell, including substrate, the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, N-shaped amorphous silicon film
Layer, the first TCO film layers and the 2nd TCO film layers, it is characterised in that:Further include p-type carbon silicon film, the first of the substrate faces out
Lamination has the first intrinsic amorphous silicon layer, p-type carbon silicon film and the first TCO film layers successively, and the second of the substrate faces out successively
Lamination has the second intrinsic amorphous silicon layer, N-shaped amorphous silicon film layer and the 2nd TCO film layers.
2. solar cell according to claim 1, it is characterised in that:The p-type carbon silicon film is p-type amorphous carbon silicon
Film layer, p-type crystallite state carbon silicon film or their stack combinations.
3. solar cell according to claim 1, it is characterised in that:The substrate is monocrystalline silicon piece or polysilicon chip;
First intrinsic amorphous silicon layer is the first intrinsic amorphous silicon layer of hydrogenation, and second intrinsic amorphous silicon layer is that hydrogenation second is intrinsic
Amorphous silicon layer, the N-shaped amorphous silicon film layer are hydrogenation N-shaped amorphous silicon film layer.
4. solar cell according to claim 1, it is characterised in that:The p-type carbon silicon film is by one or more layers group
At the p-type carbon silicon film is hydrogenation p-type carbon silicon film.
5. solar cell according to claim 1, it is characterised in that:In the first TCO film layers and the 2nd TCO film layers
It is respectively arranged with gate line electrode.
6. solar cell according to claim 1, it is characterised in that:Grid line electricity is provided in the first TCO film layers
Pole, metallic diaphragm is formed in the 2nd TCO film layers, and the metallic diaphragm covers most of region of the 2nd TCO film layers, institute
It is one or more layers to state metallic diaphragm.
7. solar cell according to claim 5 or 6, it is characterised in that:The gate line electrode is silver grating line electrode, copper
Gate line electrode or combination thereof.
8. solar cell according to claim 1, it is characterised in that:The first intrinsic amorphous silicon film layer and p-type carbon
One layer of p-type amorphous silicon film layer and/or p-type microcrystal silicon film layer are equipped between silicon film.
9. solar cell according to claim 8, it is characterised in that:The p-type amorphous silicon film layer is hydrogenation p-type amorphous
Silicon film, the p-type microcrystal silicon film layer are hydrogenation p-type microcrystal silicon film layer.
10. solar cell according to claim 1, it is characterised in that:The first TCO film layers are equipped with an antireflective
Film layer and/or the 2nd TCO film layers are equipped with an antireflection film layer, and the antireflection film layer is made of one or more layers.
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| CN201721848380.XU CN208000925U (en) | 2017-12-26 | 2017-12-26 | A kind of solar cell |
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| CN201721848380.XU CN208000925U (en) | 2017-12-26 | 2017-12-26 | A kind of solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050855A (en) * | 2021-12-31 | 2022-09-13 | 普乐新能源科技(徐州)有限公司 | Laser-doped amorphous silicon HBC solar cell and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050855A (en) * | 2021-12-31 | 2022-09-13 | 普乐新能源科技(徐州)有限公司 | Laser-doped amorphous silicon HBC solar cell and preparation method thereof |
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