CN209515681U - A kind of glass substrate heterojunction solar battery - Google Patents
A kind of glass substrate heterojunction solar battery Download PDFInfo
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- CN209515681U CN209515681U CN201920561661.XU CN201920561661U CN209515681U CN 209515681 U CN209515681 U CN 209515681U CN 201920561661 U CN201920561661 U CN 201920561661U CN 209515681 U CN209515681 U CN 209515681U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of glass substrate heterojunction solar batteries, it is related to technical field of solar batteries, the utility model includes that sequentially connected glass substrate, including transparent conducting oxide layer, hole select layer, intrinsic amorphous silicon layer and n-type doping amorphous silicon layer from top to bottom, hole selects layer for Electrochromic Molybdenum Oxide Coatings, including transparent conducting oxide layer includes molybdenum doped indium oxide, any one of mixes titanium indium oxide, tungsten-doped indium oxide, and the utility model has the advantages that structure is simple, carrier axial transport ability is strong, the utilization rate of light is high.
Description
Technical field
The utility model relates to technical field of solar batteries, more particularly to a kind of glass substrate hetero-junctions sun
It can battery.
Background technique
The appearance of fossil energy crisis, the mankind are sought for new energy, and new energy is allowed to replace traditional fossil energy.New
In energy field, odds ratio is biggish at present belongs to field of solar energy, and solar energy has cleaning, using safe, trans-utilization ratio
Easier feature.The development and utilization of solar energy accelerate the development of solar cell technology, currently on the market mature sun electricity
Pool technology has monocrystalline silicon and polycrystalline silicon solar cell technology, since the casting process of silicon will appear pollution, solar cell from now on
Large-area applications limit the development of crystal silicon battery to a certain extent, and amorphous silicon film battery begins to generate, amorphous silicon membrane
There are the advantages such as consumptive material is few, manufacturing cost is relatively low, environmental pollution is smaller, is looked forward at present at scientific research institutions in the world and photovoltaic
The research hotspot of industry.
Existing heterojunction solar battery selects layer to form laminated construction by conductive oxide and hole to reduce incidence
The reflection of light, so that battery efficiency and short circuit current are improved, but the combination of materials of conductive oxide and hole selection layer does not conform to
Reason, optical band gap difference is bigger, causes the response of visible light short-wave band weaker, the axial transport ability of carrier is poor, light
Utilization rate it is low, battery efficiency and short circuit current need to be improved.
Therefore above-mentioned technical problem how is solved, there is very much realistic meaning to those skilled in the art.
Utility model content
The purpose of this utility model is that: in order to solve the conductive oxide and hole in existing heterojunction solar battery
Select the combination of materials of layer unreasonable, optical band gap difference is bigger, causes the response of visible light short-wave band weaker, carrier
Axial transport ability it is poor, the low technical problem of the utilization rate of light, the utility model provides a kind of glass substrate hetero-junctions sun
It can battery.
The utility model specifically uses following technical scheme to achieve the goals above:
A kind of glass substrate heterojunction solar battery, including sequentially connected glass substrate, electrically conducting transparent from top to bottom
Oxide skin(coating), hole selection layer, intrinsic amorphous silicon layer and n-type doping amorphous silicon layer, hole selects layer for Electrochromic Molybdenum Oxide Coatings, transparent
Conductive oxide layer includes molybdenum doped indium oxide, any one of mixes titanium indium oxide, tungsten-doped indium oxide.
Further, including transparent conducting oxide layer top surface is additionally provided with metal grid lines anode layer, metal grid lines anode layer
With a thickness of 240nm, n-type doping amorphous silicon layer top surface is provided with metal grid lines negative electrode layer, metal grid lines negative electrode layer with a thickness of
50nm。
Further, metal grid lines anode layer and the material of metal grid lines negative electrode layer are Cu, Cu alloy, Ag, Ag alloy
Any one of, Cu alloy is that any one of Cu and Mo, W, Ti, Ni, Al, Mg, Ta, Sn, Ag are formed by alloy.
Further, including transparent conducting oxide layer with a thickness of 50-120nm.
Further, hole selection layer with a thickness of 80-150nm.
Further, intrinsic amorphous silicon layer with a thickness of 5-10nm.
Further, n-type doping amorphous silicon layer with a thickness of 30-100nm.
Further, the light transmittance 90%-95% of glass substrate, glass substrate with a thickness of 3mm-5mm.
The beneficial effects of the utility model are as follows:
1, hole selects layer for Electrochromic Molybdenum Oxide Coatings, optical band gap 3.6-3.9ev, and including transparent conducting oxide layer includes mixing
Molybdenum indium oxide any one of mixes titanium indium oxide, tungsten-doped indium oxide, and molybdenum doped indium oxide mixes titanium indium oxide and tungsten-doped indium oxide
Optical band gap is 3.8-3.9, and hole selects layer and including transparent conducting oxide layer to form stack combinations similar in optical band gap, phase
The luminous flux of incident light is mutually increased after superposition, it is stronger to the response of visible light short-wave band, photogenerated current density is improved, is increased
The strong axial transport ability of carrier, improves the utilization rate of light, so that battery efficiency and short circuit current are improved, wherein mixing molybdenum oxygen
It is relatively inexpensive to change indium preparation cost, and also relatively other two kinds of materials are relatively good for effect, is suitable for promoting.
2, including transparent conducting oxide layer with a thickness of 50-120nm, hole select layer with a thickness of 80-150nm, lamination group
It is relatively good to close effect, too thick gain is little, and cost of idleness, intrinsic amorphous silicon layer with a thickness of 5-10nm, it is intrinsic non-
The effect of crystal silicon layer is to be passivated the defect of n-type doping amorphous silicon layer below, the too thick assembling for being unfavorable for cell piece of glass substrate, glass
Glass substrate is too thin to will lead to fragment rate increase, therefore glass substrate with a thickness of 3mm-5mm is able to satisfy use condition.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of glass substrate heterojunction solar battery of the utility model.
Appended drawing reference: 1- glass substrate, 2- including transparent conducting oxide layer, the hole 3- select layer, 4- intrinsic amorphous silicon layer, 5-
N-type doping amorphous silicon layer, 6- metal grid lines negative electrode layer, 7- metal grid lines anode layer.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only to explain this
Utility model is not used to limit the utility model, i.e., the described embodiments are only a part of the embodiments of the utility model,
Instead of all the embodiments.The component of the utility model embodiment being usually described and illustrated herein in the accompanying drawings can be with each
Different configurations is planted to arrange and design.
Therefore, requirement is not intended to limit to the detailed description of the embodiments of the present invention provided in the accompanying drawings below
The scope of the utility model of protection, but it is merely representative of the selected embodiment of the utility model.Reality based on the utility model
Apply example, those skilled in the art's every other embodiment obtained without making creative work belongs to
The range of the utility model protection.
It should be noted that the relational terms of term " first " and " second " or the like be used merely to an entity or
Operation is distinguished with another entity or operation, and without necessarily requiring or implying between these entities or operation, there are any
This actual relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described
There is also other identical elements in the process, method, article or equipment of element.
The feature of the utility model and performance are described in further detail with reference to embodiments.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of glass substrate heterojunction solar batteries, including successively connect from top to bottom
Glass substrate 1, including transparent conducting oxide layer 2, hole selection layer 3, intrinsic amorphous silicon layer 4 and the n-type doping amorphous silicon layer 5 connect,
Hole selects layer 3 for Electrochromic Molybdenum Oxide Coatings, and including transparent conducting oxide layer 2 includes molybdenum doped indium oxide, mixes titanium indium oxide, tungsten-doped indium oxide
Any one of.
In the present embodiment, hole selects layer for Electrochromic Molybdenum Oxide Coatings, optical band gap 3.6-3.9ev, transparent conductive oxide
Nitride layer includes molybdenum doped indium oxide, any one of mixes titanium indium oxide, tungsten-doped indium oxide, and molybdenum doped indium oxide is mixed titanium indium oxide and mixed
The optical band gap of dove indium oxide is 3.8-3.9, and hole selects layer and including transparent conducting oxide layer to be formed similar in optical band gap
Stack combinations increase the luminous flux of incident light after being overlapped mutually, stronger to the response of visible light short-wave band, improve photoproduction
Current density enhances the axial transport ability of carrier, improves the utilization rate of light, to improve battery efficiency and short circuit electricity
Stream, wherein molybdenum doped indium oxide preparation cost is relatively inexpensive, and also relatively other two kinds of materials are relatively good for effect, are suitable for pushing away
Extensively.
Embodiment 2
As shown in Figure 1, the present embodiment is to be further optimized on the basis of embodiment 1, and specifically, electrically conducting transparent oxygen
2 top surface of compound layer is additionally provided with metal grid lines anode layer 7, metal grid lines anode layer 7 with a thickness of 240nm, n-type doping amorphous silicon
5 top surface of layer are provided with metal grid lines negative electrode layer 6, metal grid lines negative electrode layer 6 with a thickness of 50nm, thickness design is reasonable, and satisfaction makes
With requiring, the material of metal grid lines anode layer 7 and metal grid lines negative electrode layer 6 is Cu, Cu alloy, any in Ag, Ag alloy
Kind, Cu alloy is that any one of Cu and Mo, W, Ti, Ni, Al, Mg, Ta, Sn, Ag are formed by alloy, alternative material
Multiplicity.
Embodiment 3
As shown in Figure 1, the present embodiment is to be further optimized on the basis of embodiment 1, and specifically, electrically conducting transparent oxygen
Compound layer 2 with a thickness of 50-120nm, hole select layer 3 with a thickness of 80-150nm, preferably 80nm, stack combinations effect ratio
Preferably, too thick gain is little, and cost of idleness, intrinsic amorphous silicon layer 4 with a thickness of 5-10nm, preferably 5nm, it is intrinsic
The effect of amorphous silicon layer 4 is to be passivated the defect of n-type doping amorphous silicon layer 5 below, n-type doping amorphous silicon layer 5 with a thickness of 30-
100nm, preferably 30nm, the light transmittance 90%-95% of glass substrate 1, glass substrate 1 with a thickness of 3mm-5mm, glass substrate
The 1 too thick assembling for being unfavorable for cell piece, glass substrate 1 too it is thin will lead to fragment rate increase, therefore glass substrate 1 with a thickness of
3mm-5mm is able to satisfy use condition.
The above, the only preferred embodiment of the utility model, are not intended to limit the utility model, the utility model
Scope of patent protection be subject to claims, it is equivalent made by all specifications and accompanying drawing content with the utility model
Structure change similarly should be included in the protection scope of the utility model.
Claims (8)
1. a kind of glass substrate heterojunction solar battery, including sequentially connected glass substrate (1), electrically conducting transparent from top to bottom
Oxide skin(coating) (2), hole selection layer (3), intrinsic amorphous silicon layer (4) and n-type doping amorphous silicon layer (5), which is characterized in that hole
Selecting layer (3) is Electrochromic Molybdenum Oxide Coatings, and including transparent conducting oxide layer (2) includes molybdenum doped indium oxide, mixes titanium indium oxide, tungsten-doped indium oxide
Any one of.
2. a kind of glass substrate heterojunction solar battery according to claim 1, which is characterized in that transparent conductive oxide
Nitride layer (2) top surface is additionally provided with metal grid lines anode layer (7), metal grid lines anode layer (7) with a thickness of 240nm, n-type doping is non-
Crystal silicon layer (5) top surface is provided with metal grid lines negative electrode layer (6), metal grid lines negative electrode layer (6) with a thickness of 50nm.
3. a kind of glass substrate heterojunction solar battery according to claim 2, which is characterized in that metal grid lines anode
The material of layer (7) and metal grid lines negative electrode layer (6) is any one of Cu, Cu alloy, Ag, Ag alloy, Cu alloy be Cu and
Any one of Mo, W, Ti, Ni, Al, Mg, Ta, Sn, Ag are formed by alloy.
4. a kind of glass substrate heterojunction solar battery according to claim 1, which is characterized in that transparent conductive oxide
Nitride layer (2) with a thickness of 50-120nm.
5. a kind of glass substrate heterojunction solar battery according to claim 1 or 4, which is characterized in that hole selection
Layer (3) with a thickness of 80-150nm.
6. a kind of glass substrate heterojunction solar battery according to claim 1, which is characterized in that intrinsic amorphous silicon layer
(4) with a thickness of 5-10nm.
7. a kind of glass substrate heterojunction solar battery according to claim 1, which is characterized in that n-type doping amorphous
Silicon layer (5) with a thickness of 30-100nm.
8. a kind of glass substrate heterojunction solar battery according to claim 1, which is characterized in that glass substrate (1)
Light transmittance 90%-95%, glass substrate (1) with a thickness of 3mm-5mm.
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| CN201920561661.XU CN209515681U (en) | 2019-04-23 | 2019-04-23 | A kind of glass substrate heterojunction solar battery |
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| CN201920561661.XU CN209515681U (en) | 2019-04-23 | 2019-04-23 | A kind of glass substrate heterojunction solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980020A (en) * | 2019-04-23 | 2019-07-05 | 通威太阳能（成都）有限公司 | A kind of glass substrate heterojunction solar battery and preparation method thereof |
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2019
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980020A (en) * | 2019-04-23 | 2019-07-05 | 通威太阳能（成都）有限公司 | A kind of glass substrate heterojunction solar battery and preparation method thereof |
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