CN111554764A - Efficient and stable perovskite/silicon two-end laminated solar cell - Google Patents
Efficient and stable perovskite/silicon two-end laminated solar cell Download PDFInfo
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Abstract
The invention develops an efficient and stable perovskite/silicon two-end laminated solar cell, the laminated solar cell takes a narrow-band-gap perovskite cell as a top cell, and a laminated structure cell at two ends is formed by a middle connecting layer and a bottom crystalline silicon cell, so that the current matching problem of the top cell and the bottom cell is solved on the premise of ensuring that the laminated cell obtains high open voltage. The characteristics that the voltage-opening loss of a proper narrow-band-gap perovskite battery is small are utilized, so that the top battery obtains larger current, and meanwhile, the current loss of the bottom battery is compensated by properly increasing the light receiving area of the bottom crystalline silicon battery, so that the current matching of the top battery and the bottom battery is realized, and the stability of the battery is ensured while the efficiency of the high-efficiency laminated battery is obtained.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to design and preparation of a high-efficiency and stable perovskite/silicon two-end laminated solar cell.
Background
Perovskite and crystalline silicon tandem cells have attracted much attention in recent years due to the higher conversion efficiencies that can be achieved. The perovskite and crystalline silicon laminated cell is mainly combined in two modes, one mode is a perovskite and crystalline silicon cell two-end series laminated mode, and the other mode is a perovskite and crystalline silicon cell four-end laminated mode which is independent respectively. In the two-end laminated structure, the two-end laminated structure is more compatible with the preparation process of a large-scale assembly in the current photovoltaic market, and becomes the key point of the current perovskite and crystalline silicon laminated cell research. From 2015, the first perovskite/silicon crystal is preparedThe conversion efficiency of the tandem cell has been improved from 13.7% to 29.15% by the end-to-end tandem solar cell, which is far more than the highest efficiency of single crystal silicon, namely 26.7%. Major research units for perovskite/silicon two-terminal tandem solar cells that have been reported to have efficiencies exceeding 25% include the U.S. Stanford university McGehe group, the Switzerland Federal institute of technology Ballif group, the U.S. North Carolina university Huangjinson group, the Germany Helmholtz Berlin energy and materials research institute (HZB), and the England photovoltaics. It is worth pointing out that in the two-end laminated cell structure, according to kirchhoff's law, the current in the series structure design is limited to the minimum current value, that is, when the currents of the top and bottom cells are equal, the cell obtains the maximum current output, and the highest conversion efficiency is realized. Therefore, the current matching problem of the top and bottom cells is involved in the two-terminal stack design, so that stricter requirements are put on the absorption band gaps of the top and bottom cells. It is reported in the literature that to achieve a better match with the bandgap of crystalline silicon bottom cells (1.1eV), it is necessary to achieve current matching with a higher open circuit voltage using an appropriate wide bandgap perovskite cell. However, practical studies have found that the loss in open voltage of wide bandgap (greater than 1.65eV) perovskite cells is particularly severe compared to narrow bandgap (1.55eV) perovskite cells. From the results published to date, 27.1% higher conversion efficiency was achieved for the perovskite/crystalline silicon tandem cell of mcgehe group, university of stanford, usa, with an open circuit voltage of 1.886V and a short circuit current density of 19.12mA/cm2The fill factor was 75.3%. The top cell of the laminated cell is a perovskite cell with a band gap of 1.67eV, the single-junction cell obtains 20.42% of conversion efficiency, the open-circuit voltage is 1.217V, and the short-circuit current density is 20.18mA/cm2The filling factor is 83.16%, which is the highest cell efficiency obtained by the pin type wide band gap perovskite cell reported at present. According to the open-circuit voltage loss formula Eg/q-Voc, the open-circuit voltage loss is 460 mV. However, in current narrow band gap cells, the fipronil group also achieves an open circuit voltage of 1.2eV in perovskite cells with a reported band gap of 1.51 eV. And the larger the short-circuit current obtained is 23.5mA/cm due to the narrower band gap thereof2Finally, 21.9 percent of conversion efficiency is obtained, the open-circuit voltage loss of the conversion efficiency is only 310mV,much lower than the wide bandgap open voltage loss. In addition, numerous studies have also shown that wide band gap perovskite cells are more unstable. The wide-band-gap perovskite battery is mostly realized by adding more bromine, but the addition of the bromine can cause phase separation of the battery under the illumination condition, and is not favorable for the stability of the battery while the efficiency of the battery is not favorable.
In summary, the deficiencies of the existing wide band gap perovskite and crystalline silicon battery tandem cell technology can be summarized as follows: 1) wide band gap perovskite cells are chosen as top cells for current matching, but the open circuit losses of current wide band gap cells are more severe, resulting in stack cell open circuit voltages much lower than the ideal open circuit voltage. 2) The phase separation phenomenon of the wide-band-gap perovskite battery is easier to occur in the illumination process, the efficiency of the battery is not facilitated, the perovskite battery is made to be more unstable, and the practical application of the battery is not facilitated.
Disclosure of Invention
In order to solve the problems, the invention provides a perovskite with a proper narrow band gap as a top battery which forms a two-end laminated structure with a crystalline silicon battery, so that the perovskite/crystalline silicon laminated battery with higher efficiency and better stability is obtained. The following invention aims are achieved: 1) the problem of unmatched current caused by narrow band gap of the top battery is solved; 2) the narrow band gap is easier to realize and has smaller open-circuit voltage loss, so that the high open-circuit voltage advantage of the laminated battery is ensured; 3) compared with a wide-band-gap perovskite battery, the narrow-band-gap battery is more stable when being illuminated, and the stability of the laminated battery can be improved.
The technical scheme of the invention is as follows:
a high-efficiency stable perovskite/silicon two-end laminated solar cell takes a perovskite cell with a proper narrow band gap (between 1.40 and 1.65eV) as a top cell, and forms a laminated structure at two ends with a bottom crystalline silicon cell through an intermediate connecting layer; the structure design of the laminated cell is mainly embodied in that the areas of the top cell and the bottom cell are not equal, the area of the bottom crystalline silicon cell is slightly larger than that of the top perovskite cell, and the area ratio of the top cell to the bottom cell is 0.5-1.0. A proper narrow-band perovskite battery is adopted as a top battery of the laminated battery, the top battery can obtain larger current, and if the laminated battery still adopts the existing structure, the current of the top battery and the current of the bottom battery are not matched, so that the battery efficiency is influenced. The invention compensates the current of the bottom battery by increasing the area of the bottom crystalline silicon battery, and realizes the current matching of the top battery and the bottom battery. In addition, a perovskite battery with a narrower band gap is adopted as a top battery, so that a laminated battery with more stable illumination can be obtained.
The perovskite roof battery is an organic-inorganic hybrid perovskite material with a proper narrow band gap (between 1.40 and 1.65eV), or is an all-inorganic perovskite material; the components of the material are lead-based, tin-based or lead-tin mixed perovskite material. The perovskite roof cell is prepared by a solution method of two sequential depositions or one antisolvent deposition, or by an evaporation deposition or chemical vapor deposition method. The cavity material of the perovskite battery is inorganic NiOXMnS or CuSCN, or is an organic material PTAA, Spiro-OMeTAD or Spiro-TTB; the electron layer transmission material is inorganic SnO2Or TiO2Etc. or organic material PCBM or C60. The transparent electrode material on the upper surface of the perovskite top battery is ITO, IZO, IO H or IZO. The anti-reflection material on the transparent electrode material on the upper surface of the perovskite top battery is MgF2LiF or SiO2。
The middle connecting layer is made of transparent conductive film ITO or IZO, or amorphous silicon, microcrystalline silicon, nanocrystalline silicon or silicon oxygen material, or the middle connecting layer is made of transparent conductive adhesive to realize the connection of the top perovskite and the bottom crystalline silicon cell.
The crystalline silicon bottom cell is a planar silicon cell, a single-sided textured or double-sided textured silicon solar cell. The silicon cell is one of the following: n-type silicon chip, p-type silicon chip, CZ type or FZ type. The silicon cell is one of the following: a silicon heterojunction cell, TOP-Con cell, POLO cell, DASH cell, or homojunction cell; the homojunction battery is specifically a PERC, PERL or PERT battery.
The structure of the perovskite top battery and the structure of the bottom crystalline silicon battery select a pin battery structure or a nip battery structure. The structure of the perovskite battery is a planar type, a mesoporous type or an organic structure type.
In the preparation process of the battery, firstly, determining the absorption range and the obtainable integral current of the top perovskite battery through an external quantum efficiency tester (EQE); the effective battery area of the bottom crystalline silicon battery is properly increased through simulation calculation, and the current loss caused by narrowing of the band gap at the top is compensated, so that the current matching of the top battery and the bottom battery is realized; and after the areas of the top cell and the bottom cell are determined, preparing the top perovskite cell by adopting a solution method or a gas phase method, and finishing the laminated cell.
The invention has the advantages and positive effects that:
according to the invention, a perovskite battery with a proper narrow band gap is used as a top battery of the laminated battery, and the current loss of the bottom battery is compensated by adjusting the effective battery areas of the top battery and the bottom battery, so that the current matching of the top battery and the bottom battery is realized; meanwhile, on the premise of ensuring the high open voltage of the laminated battery, the invention improves the short-circuit current of the battery, thereby obtaining the perovskite/crystalline silicon laminated battery with higher efficiency; on the other hand, perovskite cells with narrow band gaps are more stable in light, so the design can also increase the stability of the tandem cell.
The mechanism analysis of the invention is as follows:
according to the invention, the problem of insufficient current of the bottom battery caused by reduction of the band gap of the top battery is compensated by increasing the effective absorption area of the bottom silicon battery, so that the short-circuit current of the laminated battery is further improved on the premise of ensuring smaller open-circuit loss of the top narrow-band-gap battery, and higher efficiency of the perovskite and crystalline silicon laminated battery is expected to be realized; in addition, due to the fact that the wide-bandgap perovskite battery has the phenomenon of illumination phase separation, the battery is extremely unstable in the illumination process, and the illumination stability of the laminated battery can be further enhanced by adopting the perovskite battery with a proper narrow bandgap.
Drawings
Fig. 1 is a schematic structural diagram of a pin-type narrow band gap organic-inorganic hybrid perovskite/silicon heterojunction tandem solar cell used in the invention.
Fig. 2 is a schematic structural diagram of a stacked solar cell adopting an nip type narrow band gap organic-inorganic hybrid perovskite/silicon heterojunction.
Fig. 3 is a schematic structural diagram of a pure tin-based inorganic perovskite/silicon heterojunction tandem solar cell used in the present invention.
Fig. 4 is a schematic diagram of a pin-type narrow band gap organic-inorganic hybrid perovskite/silicon heterojunction tandem solar cell used in the present invention, wherein a conductive adhesive is selected as a structural diagram of an upper cell connection layer and a lower cell connection layer.
FIG. 5 is a schematic structural diagram of a pin-type narrow band gap organic-inorganic hybrid perovskite/TOP-Con tandem solar cell used in the present invention.
Fig. 6 is a schematic structural diagram of a pin-type narrow band gap organic-inorganic hybrid perovskite/silicon heterojunction tandem solar cell used in the invention, wherein the silicon heterojunction is a single-side polished single-side textured structure.
Fig. 7 is a schematic structural diagram of a pin-type narrow band gap organic-inorganic hybrid perovskite/silicon heterojunction tandem solar cell used in the present invention, wherein the silicon heterojunction is a double-sided textured structure.
Detailed Description
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
Example 1:
the structure of the perovskite/silicon heterojunction tandem solar cell provided in this embodiment is shown in fig. 1, and sequentially includes, from top to bottom: front metal grid line electrode Ag, MgF2Antireflection film, transparent conductive film IZO and middle protective layer SnO2The battery comprises a Perovskite top battery electron transport layer PCBM, a Perovskite absorption layer Perovskite, a Perovskite hole transport layer PTAA, a connecting layer ITO, a Silicon heterojunction bottom battery electron selection layer N-a-Si H, a passivation layer I-a-Si H, a Silicon substrate N-Silicon, a passivation layer I-a-Si H, a hole selection layer P-a-Si H and a back electrode Al.
In the perovskite/silicon heterojunction laminated solar cell, the perovskite absorption layer is pin-type narrow-band-gap organic-inorganic hybrid perovskite prepared by continuous deposition through a two-step method. Wherein the concentration of the lead iodide solution in the first step is 1.3M, the organic salt in the second step is FAI: MABr: MACl (60g:6g:6g), and the band gap is about 1.55 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. the polished Cz silicon wafer substrate with the N-type <100> crystal orientation is placed in a PECVD system with high vacuum degree, and an intrinsic amorphous silicon passivation layer I-a-Si: H is deposited on the front surface and the back surface of the silicon wafer respectively.
2. Then one side is selected to deposit an electron selection layer N-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer P-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer P-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing a 40nm ITO material serving as a connecting layer on the N-a-Si: H by adopting an electron beam thermal evaporation mode.
5. PTAA was solution spin coated on ITO as the hole transport layer of the perovskite cell.
6. The perovskite absorption layer is prepared by a two-step method (as described above), wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to the area of the bottom crystalline silicon cell is 0.75, so that the bottom cell can generate larger current.
7. PCBM was spin-coated onto the perovskite absorber layer as an electron transport layer.
8. SnO prepared by ALD on PCBM2As a buffer layer.
9. IZO with the thickness of 80nm is prepared on the buffer layer as a transparent electrode by adopting a low-power magnetron sputtering method.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the transparent electrode IZO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.78V, short circuit current density: 24mA/cm2The fill factor: 79%, efficiency of the cell: 33.75 percent.
Example 2:
this exampleThe perovskite/silicon heterojunction tandem solar cell provided has a specific structure as shown in fig. 2, and sequentially comprises the following components from top to bottom: front metal grid line electrode Au, MgF2Anti-reflection film, transparent conductive film ITO and intermediate protective layer MoO3A Perovskite top cell hole transport layer Spiro-OMeTAD, a Perovskite absorption layer Perovskite and a Perovskite electron transport layer SnO2The solar cell comprises a connecting layer ITO, a Silicon heterojunction bottom battery hole selection layer P-a-Si H, a passivation layer I-a-Si H, a Silicon substrate N-Silicon, a passivation layer I-a-Si H, an electron selection layer N-a-Si H and a back electrode Al.
In the perovskite/silicon heterojunction laminated solar cell in the embodiment, the perovskite absorption layer is an nip type narrow-band gap organic-inorganic hybrid perovskite prepared by continuous deposition through a solution two-step method. Wherein the concentration of the lead iodide solution in the first step is 1.3M, the organic salt in the second step is FAI: MABr: MACl (60g:6g:6g), and the band gap is about 1.55 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. the polished Cz silicon wafer substrate with the N-type <100> crystal orientation is placed in a PECVD system with high vacuum degree, and an intrinsic amorphous silicon passivation layer I-a-Si: H is deposited on the front surface and the back surface of the silicon wafer respectively.
2. Then, one surface is selected to deposit a hole selection layer P-a-Si: H by adopting a PECVD mode, and the other surface is deposited with an electron selection layer N-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the electron selection layer N-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing a 40nm ITO material serving as a connecting layer on the P-a-Si: H by adopting an electron beam thermal evaporation mode.
5. Solution spin coating SnO on ITO2As an electron transport layer for perovskite cells.
6. The perovskite absorption layer is prepared by a two-step method (as described above), wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to the area of the bottom crystalline silicon cell is 0.75, so that the bottom cell can generate larger current.
7. Spiro-OMeTAD is spin-coated on the perovskite absorption layer as a hole transport layer.
8. MoO with thermal evaporation on Spiro-OMeTAD3As a buffer layer.
9. ITO with the thickness of 80nm is prepared on the buffer layer by adopting a low-power magnetron sputtering method and is used as a transparent electrode.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Au on the ITO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, a 600nm Al metal electrode and a 100nm Au metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.80V, short circuit current density: 22mA/cm2The fill factor: 79.3 percent of the total weight of the mixture,
efficiency of the cell: 31.40 percent.
Example 3:
the perovskite/silicon heterojunction tandem solar cell provided by this embodiment has a specific structure as shown in fig. 3, and sequentially includes, from top to bottom: front metal grid line electrode Ag, MgF2Antireflection film, transparent conductive film IZO and middle protective layer SnO2The battery comprises a Perovskite top battery electron transport layer (PCBM), a Perovskite absorption layer Perovskite, a Perovskite hole transport layer PTAA, a connecting layer ITO, a Silicon heterojunction bottom battery electron selection layer N-a-Si: H, a passivation layer I-a-Si: H, a Silicon substrate N-Silicon, a passivation layer I-a-Si: H, a hole selection layer P-a-Si: H and a back electrode Al.
In the perovskite/silicon heterojunction laminated solar cell, the perovskite absorption layer is lead-tin mixed pin type perovskite CsPb prepared by solution deposition and having a band gap of about 1.50eVxSn1-x(IyBr1-y)3。
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. the polished Cz silicon wafer substrate with the N-type <100> crystal orientation is placed in a PECVD system with high vacuum degree, and an intrinsic amorphous silicon passivation layer I-a-Si: H is deposited on the front surface and the back surface of the silicon wafer respectively.
2. Then one side is selected to deposit an electron selection layer N-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer P-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer P-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing a 40nm ITO material serving as a connecting layer on the N-a-Si: H by adopting an electron beam thermal evaporation mode.
5. PTAA was solution spin coated on ITO as the hole transport layer of the perovskite cell.
6. The perovskite absorption layer is prepared by a two-step method (as described above), wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to the area of the bottom crystalline silicon cell is 0.75, so that the bottom cell can generate larger current.
7. PCBM was spin-coated onto the perovskite absorber layer as an electron transport layer.
8. SnO prepared by ALD on PCBM2As a buffer layer.
9. IZO with the thickness of 80nm is prepared on the buffer layer as a transparent electrode by adopting a low-power magnetron sputtering method.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the transparent electrode IZO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.70V, short circuit current density: 25mA/cm2The fill factor: 78%, efficiency of the cell: 33.15 percent.
Example 4:
the perovskite/silicon heterojunction tandem solar cell provided by this embodiment has a specific structure as shown in fig. 4, and sequentially includes, from top to bottom: front metal grid line electrode Ag, MgF2Antireflection film, transparent conductive film ITO, electronic transmission layer SnO of perovskite top battery2Perovskite absorption layer Perovskite, PerovskiteThe solar cell comprises a mineral hole transport layer PTAA, a conductive adhesive connecting layer DCL, a transparent conductive film ITO, a cell electron selection layer N-a-Si H with a Silicon heterojunction bottom, a passivation layer I-a-Si H, a Silicon substrate N-Silicon, a passivation layer I-a-Si H, a hole selection layer P-a-Si H and a back electrode Al.
In the perovskite/silicon heterojunction laminated solar cell, a crystalline silicon bottom cell and a perovskite top cell are separately prepared, and then the top cell and the bottom cell are connected through a conductive adhesive to form a result with two ends connected in series. The perovskite absorption layer is an nip type narrow-band gap organic-inorganic hybrid perovskite prepared by continuous deposition through a two-step solution method, the concentration of a lead iodide solution in the first step is 1.3M, organic salt in the second step is FAI, MABr and MACl (60g, 15g and 6g), and the band gap is about 1.58 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. firstly, preparing a bottom crystalline silicon battery: placing a polished Cz silicon wafer substrate with an N-type <100> crystal orientation in a PECVD system with high vacuum degree, and depositing an intrinsic amorphous silicon passivation layer I-a-Si: H on the front surface and the back surface of the silicon wafer respectively; then selecting one surface to deposit an electron selection layer N-a-Si: H by adopting a PECVD mode, and depositing a hole selection layer P-a-Si: H on the other surface; in the hole selection layer P-a-Si, the ITO is thermally evaporated by an H-face electron beam to be used as a back transparent electrode of the crystalline silicon bottom cell; preparing a 40nm ITO material on N-a-Si-H by adopting an electron beam thermal evaporation mode to be used as a light incident surface transparent electrode of a bottom cell; and preparing a conductive adhesive DCL on the ITO to be used as a connecting layer of the top cell and the bottom cell, so that the preparation of the bottom silicon cell is finished.
2. Preparing a top battery perovskite battery, namely preparing an ITO transparent conductive electrode on a flexible substrate by a sputtering method; solution spin coating SnO on ITO2As an electron transport layer for a perovskite battery; preparing a perovskite absorption layer (as described above) by a two-step method, wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to that of the bottom crystalline silicon cell is 0.8, so as to ensure that the bottom cell can generate larger current; and (4) coating the PTAA on the perovskite absorption layer as a hole transport layer in a spinning mode, and thus finishing the preparation of the top perovskite battery.
3. And (3) bonding the hole layer PTAA of the top perovskite cell with the conductive adhesive DCL on the bottom crystalline silicon cell to form a series structure of the top and bottom cells.
4. And removing the flexible substrate of the top perovskite cell by adopting a chemical corrosion method, and reserving the ITO transparent conductive electrode.
5. Preparation of MgF on ITO electrode by evaporation method2And (4) antireflection layer.
6. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
7. Results for the laminate cell: open circuit voltage: 1.80V, short circuit current density: 23.5mA/cm2The fill factor: 78%, efficiency of the cell: 32.99 percent.
Example 5:
the perovskite/TOP-Con tandem solar cell provided in this embodiment has a specific structure as shown in fig. 5, and sequentially includes, from TOP to bottom: a front metal grid line electrode Ag, a transparent conductive film IZO and an intermediate protective layer SnO2An electron transport layer PCBM of the Perovskite TOP battery, a Perovskite absorption layer Perovskite, a Perovskite hole transport layer PTAA, a connecting layer ITO and a TOP-Con bottom battery electron selection layer N-nc-SiCx、SiO2Passivation layer, Silicon substrate N-Silicon, SiO2Passivation layer and hole selection layer P-nc-SiCxF and a back electrode Al.
In the perovskite/TOP-Con laminated solar cell, a TOP-Con cell is selected as a bottom crystalline silicon cell, and a perovskite absorption layer is a pin-type narrow-band-gap organic-inorganic hybrid perovskite prepared by continuous deposition through a solution two-step method. Wherein the concentration of the inorganic salt solution in the first step is 1.3M, and the molar ratio of the inorganic salt solution to the inorganic salt solution is PbBr2:PbI215:85, FAI: MABr: MACl (60g:6g:6g) as the second organic salt, and a band gap of 1.60 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. will be N type<100>Preparation of SiO by crystal-oriented polished Cz silicon wafer substrate double-sided ultraviolet ozone treatment2And a passivation layer.
2. Then one surface is selected to deposit an electron selection layer N-nc-SiC in a PECVD modexDepositing a hole selection layer P-nc-SiC on the other surfacex:F。
3. In the hole selection layer P-nc-SiCxThe F-side electron beam thermal evaporation ITO is used as a back transparent electrode of the crystalline silicon cell.
4. In N-nc-SiCxThe 40nm ITO material is prepared as a connecting layer by adopting an electron beam thermal evaporation mode.
5. PTAA was solution spin coated on ITO as the hole transport layer of the perovskite cell.
6. The perovskite absorption layer is prepared by a two-step method (as described above), wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to that of the bottom crystalline silicon cell is 0.85, so that the bottom cell can generate larger current.
7. PCBM was spin-coated onto the perovskite absorber layer as an electron transport layer.
8. SnO prepared by ALD on PCBM2As a buffer layer.
9. IZO with the thickness of 80nm is prepared on the buffer layer as a transparent electrode by adopting a low-power magnetron sputtering method.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the transparent electrode IZO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.80V, short circuit current density: 22mA/cm2The fill factor: 79.2%, efficiency of the cell: 31.36 percent.
Example 6:
the perovskite/silicon heterojunction tandem solar cell provided by this embodiment has a specific structure as shown in fig. 6, and sequentially includes, from top to bottom: front metal grid line electrode Ag, MgF2Antireflection film, transparent conductive film IZO, middleInterlayer protective layer SnO2The electronic transmission layer PCBM of the Perovskite top battery, the Perovskite absorption layer Perovskite, the Perovskite hole transmission layer PTAA, the connecting layer ITO, the electronic selection layer N-a-si of the Silicon heterojunction bottom battery, the passivation layer I-a-si, the Silicon substrate N-Silicon, the passivation layer I-a-si, the hole selection layer P-a-si and the back electrode Al are sequentially arranged on the outer side of the Silicon substrate.
In the perovskite/silicon heterojunction laminated solar cell, a silicon wafer is in a structure of single-side polishing and single-side texturing, wherein a perovskite absorption layer is prepared on the polished surface of the cell, and pin-type narrow-band-gap organic-inorganic hybrid perovskite is prepared by continuous deposition through a solution two-step method. Wherein the concentration of the inorganic salt solution in the first step is 1.3M, and the molar ratio of the inorganic salt solution to the inorganic salt solution is PbBr2:PbI215:85, FAI: MABr: MACl (60g:6g:6g) as the second organic salt, and a band gap of 1.60 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. the polished Cz silicon wafer substrate with the N-type <100> crystal orientation is placed in a PECVD system with high vacuum degree, and an intrinsic amorphous silicon passivation layer I-a-Si: H is deposited on the front surface and the back surface of the silicon wafer respectively.
2. Then, one surface is selected to deposit an electron selection layer N-a-Si: H on the polished surface by adopting a PECVD mode, and the other texturing surface is deposited with a hole selection layer P-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer P-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing a 40nm ITO material serving as a connecting layer on the N-a-Si: H by adopting an electron beam thermal evaporation mode.
5. PTAA was solution spin coated on ITO as the hole transport layer of the perovskite cell.
6. The perovskite absorption layer is prepared by a two-step method, wherein the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to that of the bottom crystalline silicon cell is 0.88, so that the bottom cell can generate larger current.
7. PCBM was spin-coated onto the perovskite absorber layer as an electron transport layer.
8. SnO prepared by ALD on PCBM2As a buffer layer.
9. IZO with the thickness of 80nm is prepared on the buffer layer as a transparent electrode by adopting a low-power magnetron sputtering method.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the transparent electrode IZO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.88V, short-circuit current density: 22.5mA/cm2The fill factor: 81%, efficiency of the cell: 34.26 percent.
Example 7:
the perovskite/silicon heterojunction tandem solar cell provided by this embodiment has a specific structure as shown in fig. 7, and sequentially includes, from top to bottom: front metal grid line electrode Ag, MgF2Antireflection film, transparent conductive film IZO and middle protective layer SnO2Perovskite roof battery electron transport layer C60The battery comprises a Perovskite absorption layer Perovskite, a Perovskite hole transport layer Spiro-TTB, a connecting layer ITO, a Silicon heterojunction bottom battery electron selection layer N-a-si H, a passivation layer I-a-si H, a Silicon substrate N-Silicon, a passivation layer I-a-si H, a hole selection layer P-a-si H and a back electrode Al.
In the perovskite/silicon heterojunction laminated solar cell, a silicon wafer is in a double-sided texture surface making structure. The perovskite absorption layer is prepared into pin type organic-inorganic hybrid perovskite by adopting a two-step method of evaporation combined solution. Wherein the first step co-evaporates the inorganic salt PbI2And CsBr at an evaporation rate of 10:1, FABr: FAI (1:4) as the second organic salt, and a band gap of 1.63 eV.
The perovskite/silicon heterojunction laminated solar cell of the embodiment is prepared by the following method:
1. the polished Cz silicon wafer substrate with the N-type <100> crystal orientation is placed in a PECVD system with high vacuum degree, and an intrinsic amorphous silicon passivation layer I-a-Si: H is deposited on the front surface and the back surface of the silicon wafer respectively.
2. Then one texturing surface is selected to deposit an electron selection layer N-a-Si: H in a PECVD mode, and the other texturing surface is deposited with a hole selection layer P-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer P-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing a 40nm ITO material serving as a connecting layer on the N-a-Si: H by adopting an electron beam thermal evaporation mode.
5. Spiro-TTB is evaporated on the ITO as a hole transport layer of the perovskite cell.
6. The perovskite layer is prepared by first co-evaporating the inorganic salt PbI in a first step2And CsBr at an evaporation rate of 10: 1; taking out a sample from the vacuum cavity, and preparing organic salt by adopting a solution method through spin coating, wherein the ratio of the organic salt is FABr to FAI (1: 4); annealing and crystallizing to form perovskite. And the effective area of the perovskite is smaller than that of the bottom crystalline silicon cell, and the ratio of the effective area of the perovskite to that of the bottom crystalline silicon cell is 0.9, so that the bottom cell can generate larger current.
7. Evaporation of C on perovskite absorption layer60As an electron transport layer.
8. At C60SnO prepared by ALD2As a buffer layer.
9. IZO with the thickness of 80nm is prepared on the buffer layer as a transparent electrode by adopting a low-power magnetron sputtering method.
10. Preparation of MgF on transparent electrode by thermal evaporation method2As an antireflection film.
11. And preparing a metal electrode Al on the ITO at the bottom of the crystalline silicon cell, and preparing a metal grid line electrode Ag on the transparent electrode IZO at the top of the perovskite cell to obtain the perovskite/silicon heterojunction laminated solar cell. In this example, 600nm Al metal electrode and 100nm Ag metal electrode were prepared by thermal evaporation, respectively.
12. Results for the laminate cell: open circuit voltage: 1.88V, short-circuit current density: 22.8mA/cm2The fill factor: 80.5%, efficiency of the cell: 34.51 percent.
In conclusion, the invention provides the high-efficiency and stable perovskite/silicon two-end laminated solar cell, which is matched with a top cell with narrowed band gap and high current of a perovskite top cell by increasing the light receiving area of a bottom silicon cell, so as to obtain the high-efficiency laminated cell; on the other hand, the illumination stability of the battery is stronger after the band gap of the top layer perovskite battery is narrowed, so that the stability of the laminated battery is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A high-efficiency stable perovskite/silicon two-end laminated solar cell is characterized in that a perovskite cell with a narrow band gap of 1.40-1.65eV is used as a top cell, and a laminated structure at two ends is formed by a middle connecting layer and a bottom crystalline silicon cell; the areas of the top battery and the bottom battery in the laminated batteries at the two ends are not equal, the area ratio of the top battery to the bottom battery is 0.5-1.0, the current of the bottom battery is compensated by properly increasing the area of the bottom crystalline silicon battery, and the current matching of the top battery and the bottom battery is realized.
2. An efficient and stable perovskite/silicon two-terminal stacked solar cell as claimed in claim 1, wherein the perovskite top cell is a narrow band gap organic-inorganic hybrid perovskite material or an all-inorganic perovskite material; the components of the material are lead-based, tin-based or lead-tin mixed perovskite material.
3. A highly efficient stable perovskite/silicon two-terminal stacked solar cell as claimed in claim 1, wherein the perovskite top cell is prepared by a solution method of two-step sequential deposition or one-step anti-solvent deposition, or by evaporation deposition or chemical vapor deposition; the structure of the perovskite top battery and the structure of the bottom crystalline silicon battery select a pin battery structure or a nip battery structure.
4. An efficient and stable perovskite/silicon two-terminal laminated solar cell as claimed in claim 1, wherein the cavity material of the perovskite cell is inorganic NiOXMnS or CuSCN, or is an organic material PTAA, Spiro-OMeTAD or Spiro-TTB; the electron layer transmission material is inorganic SnO2Or TiO2Etc. or organic material PCBM or C60。
5. A highly efficient stable perovskite/silicon two-end laminated solar cell as claimed in claim 1, wherein the transparent electrode material on the upper surface of the perovskite top cell is ITO, IZO, IO: H or IZO.
6. An efficient and stable perovskite/silicon two-end laminated solar cell as claimed in claim 1, wherein the anti-reflection material on the transparent electrode material on the upper surface of the perovskite top cell is MgF2LiF or SiO2。
7. A highly efficient stable perovskite/silicon two-terminal stacked solar cell as claimed in claim 1, wherein the intermediate connection layer is a transparent conductive thin film ITO or IZO, or is an amorphous silicon, microcrystalline silicon, nanocrystalline silicon or silicon oxygen material, or is selected from a transparent conductive adhesive to realize the connection of the top perovskite and the bottom crystalline silicon cell.
8. An efficient and stable perovskite/silicon two-end laminated solar cell as claimed in claim 1, wherein the crystalline silicon bottom cell is a planar silicon cell, a single-sided textured or double-sided textured silicon solar cell.
9. A highly efficient stable perovskite/silicon two-terminal stacked solar cell as claimed in claim 9, wherein said silicon cell is one of the following: n-type silicon chip, p-type silicon chip, CZ type or FZ type; the silicon cell is one of the following: a silicon heterojunction cell, TOP-Con cell, POLO cell, DASH cell, or homojunction cell; the homojunction battery is specifically a PERC, PERL or PERT battery.
10. An efficient and stable perovskite/silicon two-terminal-stacked solar cell as claimed in claim 1, wherein the structure of the perovskite cell is planar, mesoporous or organic.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112614913A (en) * | 2020-12-15 | 2021-04-06 | 华能新能源股份有限公司 | Compensation system and method for laminated battery |
| CN113410390A (en) * | 2021-06-16 | 2021-09-17 | 合肥工业大学 | perovskite/PERC two-end laminated cell and preparation method thereof |
| CN113594372A (en) * | 2021-07-29 | 2021-11-02 | 通威太阳能（安徽）有限公司 | Silicon/perovskite laminated solar cell and preparation method thereof |
| CN113659080A (en) * | 2021-08-13 | 2021-11-16 | 江苏盛开高新材料有限公司 | Perovskite laminated battery and preparation method thereof |
| CN114361283A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Deep ultraviolet detector and preparation method thereof |
| CN114497287A (en) * | 2022-04-15 | 2022-05-13 | 浙江爱旭太阳能科技有限公司 | Solar cell composite assembly, preparation method thereof and photovoltaic system |
| WO2022129757A1 (en) * | 2020-12-18 | 2022-06-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Simplified structure of two-terminal tandem solar cells with transparent conducting oxide junction material |
| CN116364332A (en) * | 2021-12-22 | 2023-06-30 | 嘉兴阿特斯技术研究院有限公司 | Transparent conductive film precursor solution/slurry, and preparation method and application thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024985A (en) * | 2016-07-13 | 2016-10-12 | 苏州协鑫集成科技工业应用研究院有限公司 | Tandem solar cell and manufacturing method thereof |
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
| CN107369767A (en) * | 2017-07-20 | 2017-11-21 | 南开大学 | A kind of perovskite/silicon heterogenous both ends stacked solar cell, cascade solar cell |
| CN107507928A (en) * | 2017-07-20 | 2017-12-22 | 南开大学 | A kind of regulation and control perovskite/silicon laminated cell Zhong Ding, the method for bottom cell light currents match |
| CN107564989A (en) * | 2017-07-20 | 2018-01-09 | 南开大学 | The structure design of tunnel junctions in a kind of perovskite/silicon heterogenous stacked solar cell, cascade solar cell |
| CN109935690A (en) * | 2017-12-15 | 2019-06-25 | 北京大学 | A kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite |
| CN209087911U (en) * | 2018-09-28 | 2019-07-09 | 东泰高科装备科技有限公司 | A kind of perovskite/crystal silicon lamination solar cell |
| CN110246923A (en) * | 2019-06-29 | 2019-09-17 | 深圳黑晶光电科技有限公司 | A kind of tandem type perovskite/homojunction silicon lamination solar cell and preparation method thereof |
| CN110767777A (en) * | 2019-11-05 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of low-cost high-efficiency laminated solar cell |
-
2020
- 2020-04-01 CN CN202010250940.1A patent/CN111554764A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
| CN106024985A (en) * | 2016-07-13 | 2016-10-12 | 苏州协鑫集成科技工业应用研究院有限公司 | Tandem solar cell and manufacturing method thereof |
| CN107369767A (en) * | 2017-07-20 | 2017-11-21 | 南开大学 | A kind of perovskite/silicon heterogenous both ends stacked solar cell, cascade solar cell |
| CN107507928A (en) * | 2017-07-20 | 2017-12-22 | 南开大学 | A kind of regulation and control perovskite/silicon laminated cell Zhong Ding, the method for bottom cell light currents match |
| CN107564989A (en) * | 2017-07-20 | 2018-01-09 | 南开大学 | The structure design of tunnel junctions in a kind of perovskite/silicon heterogenous stacked solar cell, cascade solar cell |
| CN109935690A (en) * | 2017-12-15 | 2019-06-25 | 北京大学 | A kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite |
| CN209087911U (en) * | 2018-09-28 | 2019-07-09 | 东泰高科装备科技有限公司 | A kind of perovskite/crystal silicon lamination solar cell |
| CN110246923A (en) * | 2019-06-29 | 2019-09-17 | 深圳黑晶光电科技有限公司 | A kind of tandem type perovskite/homojunction silicon lamination solar cell and preparation method thereof |
| CN110767777A (en) * | 2019-11-05 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of low-cost high-efficiency laminated solar cell |
Non-Patent Citations (1)
| Title |
|---|
| MASAAKI BABA等: "《Effect of Series Resistances on Conversion Efficiency of GaAs/Si Tandem Solar Cells With Areal Current-Matching Technique》" * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112614913A (en) * | 2020-12-15 | 2021-04-06 | 华能新能源股份有限公司 | Compensation system and method for laminated battery |
| WO2022129757A1 (en) * | 2020-12-18 | 2022-06-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Simplified structure of two-terminal tandem solar cells with transparent conducting oxide junction material |
| FR3118298A1 (en) * | 2020-12-18 | 2022-06-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | SIMPLIFIED STRUCTURE OF TWO-TERMINAL TANDEM SOLAR CELLS HAVING TRANSPARENT CONDUCTIVE OXIDE JOINT MATERIAL |
| CN114361283A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Deep ultraviolet detector and preparation method thereof |
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Application publication date: 20200818 |