CN109935690A - A kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite - Google Patents

A kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite Download PDF

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CN109935690A
CN109935690A CN201711345397.8A CN201711345397A CN109935690A CN 109935690 A CN109935690 A CN 109935690A CN 201711345397 A CN201711345397 A CN 201711345397A CN 109935690 A CN109935690 A CN 109935690A
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perovskite
layer
electrode
solar cell
silicon heterogenous
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周欢萍
邱智文
徐梓淇
周宁
李能旭
陈怡华
赵冠超
李厉伟
孟原
郭铁
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Peking University
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The present invention relates to a kind of production methods of lamination solar cell based on silicon heterogenous/two electrode of perovskite.Lamination solar cell can more preferably utilize the photon of solar spectrum intermediate waves, obtain higher efficiency compared with unijunction solar.The lamination solar cell of silicon heterogenous/two electrode of perovskite includes the silion cell of top the perovskite solar battery and narrow band gap of broad-band gap, from top to bottom successively includes anti-reflection layer, transparent top electrode, protective layer, perovskite absorbed layer, electron transfer layer, middle layer, Si hetero-junction solar cell, metal electrode.The present invention uses and is prepared for tunnel knot and perovskite absorbed layer at low temperature.The lamination solar cell efficiency of silicon heterogenous/two electrode of perovskite prepared by simple, inexpensive solwution method can finally reach 22.22%, be on the leading domestic level.

Description

A kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite
Technical field
The present invention relates to area of solar cell, more particularly to a kind of folded based on silicon heterogenous/two electrode of perovskite The preparation method of layer solar cell.
Background technique
The Energy distribution of solar spectrum is wider, and the photoelectric respone spectral region of single semiconductor material is relative to solar spectrum It is all too narrow, fundamentally constrain the raising of efficiency.The semiconductor material combinations of different forbidden bandwidths are got up to be formed more knots half Conductor solar battery.The incident light of different wavelength range is absorbed respectively, and the energy band of top cell is maximum, successively reduces down. More pn junction p n solar batteries are with its higher transfer efficiency, good temperature characterisitic, lower environmental pollution and biggish Cost reduces the advantages such as space, it has also become applies most potential solar battery at present.
So far from June, 2013, perovskite conversion efficiency of solar cell is promoted to 22.1% rapidly from 14%, is become and is worked as The research hotspot of preceding photovoltaic art.Perovskite material has special ABX3Crystal structure, even if generating a large amount of crystal defects, still It is able to maintain stable structure, and is conducive to the diffusive migration of defect;Furthermore perovskite material has high mobility, high diffusion Length and minority carrier life time, battery have compared with high open circuit voltage (> 1V);It is within the scope of 300-900nm in wavelength, material has height Absorption coefficient.But since its band gap is larger, spectral response of the perovskite near infrared region is weaker, constrains battery performance and mentions It rises.Silion cell field occupation rate is up to 90%, at high cost, has excellent performance, band gap is relatively being suitble to make bottom battery for 1.12eV;Calcium titanium Mine may be implemented that band gap is controllable, and the low tolerance defect ability height of the lattice mismatch with flexibility and Si is suitble to make top battery.It will Lower-cost perovskite battery and the most mature silion cell of technology, which combine, prepares laminated cell, widens spectral response, Ke Yili With perovskite/silicon/crystalline silicon heterojunction laminated cell structure, there is stronger absorption to near-infrared photon, realize currents match, improve battery Open-circuit voltage, and then promote transfer efficiency, it is considered to be a kind of very promising high-efficiency battery new technology.
Summary of the invention
It is an object of the present invention to overcome spectral response of the perovskite solar battery near infrared region weaker, is promoted and turned Efficiency is changed, a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite is provided.
In order to solve the above technical problems, the technical solution of the present invention is as follows:
A kind of silicon heterogenous/perovskite two electrode solar batteries of series connection, by top layer solar battery and bottom The middle layer of two batteries above and below solar battery and series connection;The formal structure that the top layer solar battery uses, including Electron transfer layer, perovskite absorbed layer, hole transmission layer, protective layer, transparency conducting layer;
Preferably, the electron transfer layer is titanium dioxide or stannic oxide.
Preferably, the top layer perovskite light-absorption layer has ABX3The organic inorganic hybridization perovskite of type crystal structure, In, A is methyl amine or carbonamidine amine, and B is lead, tin or antimony, and X is iodine, bromine or chlorine, and forbidden bandwidth is in 1.55eV-1.8eV, x value 0.37-0.52。
Preferably, the material of the hole transmission layer is Spiro-OMeTAD (2,2 ', 7,7 '-four [(4 methoxyl groups of N, N- bis- Phenyl) amino] -9,9 '-spiral shell, two fluorenes) or PTAA (poly- [bis- (4- phenyl) (2,4,6 trimethylphenyl) amine] or P3HT (3- hexyl Thiophene)).
Preferably, the protective layer is molybdenum oxide (MoOx), since the energy of magnetron sputtering is higher, it is easily damaged calcium titanium The light absorbing layer of mine, so when sputtering transparent electrode, using the method for thermal evaporation deposit on the hole transport layer 10nm~ The molybdenum oxide of 30nm.
Preferably, the transparency conducting layer can be that magnetron sputtering apparatus is utilized to sputter ito thin film or vacuum evaporation DMD transparent electrode (the MoO of method preparationX/Au/Ag/MoOX)。
Preferably, the bottom solar battery is commercialized N-type plane silion cell and top layer solar battery phase Match;
Preferably, the middle layer be magnetron sputtering ITO, can be used PEIE (polyethoxy aziridine) and PEDOT (poly- 3,4- ethene dioxythiophene) modifies the silion cell upper layer surface ITO.
The present invention provides a kind of preparation method of lamination solar cell based on silicon heterogenous/two electrode of perovskite, packet Include following steps:
The preparation of S01 bottom silion cell: silicon based cells used are that Xin Ao Co., Ltd provides;
The preparation of S02 middle layer: the magnetron sputtering ito thin film of one layer of 80nm is used in the upper surface of silion cell;
The preparation of S03 electron transfer layer: TiO will be dispersed with2After the ethanol solution of nano particle is with 3000rmp30s spin coating 150 degrees Celsius of annealing 30min, for SnO2Substrate SnO2·2H2O stoste and deionized water are mixed according to a certain percentage Uniformly, it using sol evenning machine 3000rpm*30s spin coating, then is made annealing treatment, forms SnO2Film;
The preparation of S04 perovskite light absorbing layer: first configure two-step method spin coating presoma, the first step first by lead iodide, Lead bromide, cesium iodide are dissolved in n,N dimethylformamide (DMF) solvent, and 70 DEG C are stirred 5 hours, and then 3000rpm is spin-coated on electricity In sub- transport layer, iodine methylamine, iodine carbonamidine, bromine methylamine are dissolved in isopropanol by 70 DEG C of annealing 20min, second step according to a certain percentage In, 2h is stirred at room temperature.Then 3000rmp is spin-coated on lead iodide, 150 DEG C of annealing 15min in 30%RH;
The preparation of S05 hole transmission layer: the chlorobenzene solution 3000rmp of spiro is spin-coated on above perovskite light absorbing layer;
The preparation of S06 transparent electrode: for ito transparent electrode, using magnetron sputtering, power 200W sputters 20min Form the ito thin film of 240nm;For DMD transparent electrode, before this with 0.2-0.6 angstroms per second be deposited 5nm molybdenum oxide, later with The gold of 0.1-0.2 angstroms of vapor deposition 1nm per second, is deposited the silver of 10nm with 0.4 angstrom per second later, is deposited later with 0.2-0.6 angstroms per second The molybdenum oxide of 20nm;
The extraction of S07 electrode wires: the back side of bottom Si battery paints silver paste, draws cathode with silver wire;With blade in top electricity The rectangular-shaped baby battery of 3mm*4mm is extremely cut into blade above, then puts upper indium electrode, size 1mm*2mm, with probe pressure Anode is drawn in indium metal.
The present invention relates to the research/development platforms of two polar stack battery of perovskite battery and silicon/perovskite, prepare energy band In the perovskite thin film for the low defect bloom electric property that 1.5-1.8eV can regulate and control, optimize light-absorption layer above and below in laminated cell Energy band and current matching problem, be aided with suitable interface and technique.On this basis, transparent has been advanced optimized The preparation process of electrode and antireflective coating magnesium fluoride, it is final to realize laminated cell transfer efficiency > 22%, in domestic top water It is flat.
Detailed description of the invention:
Fig. 1 prepares the Technology Roadmap based on silicon heterogenous/perovskite lamination solar cell;
Structural schematic diagram of the Fig. 2 based on silicon heterogenous/two electrode solar battery of perovskite;
Fig. 3 optimizes silicon heterogenous/perovskite lamination solar cell preparation process, obtains 22% or more high efficiency.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, right below in conjunction with specific embodiment The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are only used to explain the present invention, It is not intended to limit the present invention.
Implementation method of the present invention is described further with reference to the accompanying drawing.
Fig. 1 is to prepare the Technology Roadmap based on silicon heterogenous/perovskite lamination solar cell;Calcium in following embodiment The preparation method of titanium ore solar battery is based on technology path shown in FIG. 1.
Refering to Figure 1, the present invention provides a kind of structure based on silicon heterogenous/two electrode solar battery of perovskite The schematic diagram structure successively include: from the bottom to top from bottom to top successively include silver electrode (101), hetero-junctions Si battery (102), ITO articulamentum (103), stannic oxide electron transfer layer (104), perovskite absorbed layer (105), hole transmission layer (106), protection Layer (107), transparent top electrode (108), indium electrode (109), anti-reflection layer (110).
Embodiment one (the lamination efficiency optimization based on different perovskite forbidden bandwidths)
(1) it is commercialized to obtain n-type heterojunction Si battery, having a size of 1cm*1cm;
(2) use magnetron sputtering power 80nm ito thin film as the articulamentum of upper and lower battery on Si battery;
(3) the Si battery after sputtering is in ethanol solution ultrasound 10min, after being dried up with nitrogen gun, with ultraviolet cleaning machine UV 20min come increase solution wettability and removal surface organic matter;
(4) preparation of electron transfer layer: by SnO2·2H2(purchase on a si substrate, utilizes O from Alfa Aesar) spin coating Sol evenning machine 3000rpm*30s spin coating, then 150 DEG C of annealing 30min of annealing are carried out, form fine and close SnO2Film;3000rpm Anneal 30min under 150 degrees celsius.
(5) preparation of the perovskite absorbed layer of different band gap, configures the presoma of two-step method spin coating, by different quality first Lead iodide and lead bromide be dissolved in 1ml n,N dimethylformamide (DMF) solvent, 70 DEG C of stirring 5h.Take 35ul presoma molten Liquid is spread on substrate, and 3000rpm*30s is spin-dried for, and in 70 DEG C of annealing 20min, the film of glassy yellow is formed, by 40mg iodine carbonamidine It is dissolved in the isopropanol of 1ml with 20mg iodine methylamine, 2h is stirred at room temperature.The iodine methylamine and iodine carbonamidine of 800-100ul are extracted with liquid-transfering gun Aqueous isopropanol fast-lighting yellow film surface, 3000rpm*30s is spin-dried for, and under the humidity of 30RH%, 150 DEG C are moved back Fiery 15min prepares the perovskite activity light absorbing layer of different band gap, with a thickness of 400nm to 500nm;
(6) preparation of hole transmission layer, the configuration method of Spiro-OMeTAD: dissolution 72.3mg (2,2', 7,7'- tetra- (N, N- Dimethoxyphenyl amine) -9,9'- spiral shell, two fluorenes) (spiral shell-OMeTAD), 28.8 μ l 4- tert .-butylpyridine (99.9%Sigma- Aldrich) and bis- (trifluoromethyl sulfonyl) imide lis of the 520mg/mL of 17.5 μ L are in acetonitrile (99.9%, Sigma- Aldrich the solution in) uses after stirring in 1mL chlorobenzene (99.9%, Sigma-Aldrich).Take the Spiro chlorine of 35 μ L Benzole soln spreads into the surface of perovskite light absorbing layer, and 3000rpm*30s is spin-dried for, and aoxidizes 8h;
(7) preparation of protective layer, 10-5The molybdenum oxide (MoOx) of 30m thickness is deposited under conditions of Pa, rate is
(8) preparation of top layer transparent electrode, the ITO for forming 240nm using magnetron sputtering with 240W power sputtering 20min are thin Film, sheet resistance are the Europe 70-80/, carrier concentration 7.18*1017cm-3
(9) extraction of the segmentation of battery and electrode wires is cut into the rectangle of 3mm*4mm with blade on top electrode with blade Then the baby battery of shape puts upper indium electrode, size 1mm*2mm.Silver paste is painted at the back side of bottom Si battery, is drawn with silver wire Cathode is pressed in indium metal with probe and draws anode.
1 perovskite forbidden bandwidth of table influences laminated device performance
Embodiment two (optimization electron transfer layer)
The present embodiment provides a kind of preparation method of perovskite solar battery, the preparation method that is provided in the present embodiment three It is basically the same as the first embodiment, the difference is that the revolving speed of the spin coating of electron transfer layer in one step of embodiment (4) is changed Become, and then change the thickness of tin dioxide layer, and has attempted composite electron transport layer (titanium dioxide and stannic oxide are answered Close), to wish that electron transfer layer can carry out certain finishing to the fluctuating of Si battery surface, reduces its roughness, be upper The growth of layer perovskite provides good environment, and improves light induced electron extraction efficiency, avoids charge accumulated to device lifetime Influence.
The regulation of 2 electron transfer layer of table influences device performance
Embodiment three (probes into whether magnesium fluoride is improved effect to the efficiency of battery)
(1) ito glass etched, having a size of 1.5cm*1.5cm.Transparent conducting glass is passed through into conventional substrate scavenger Skill washing cleaning.
(2) after being dried up with nitrogen gun, increase the wettability and removal table of solution with ultraviolet cleaning machine UV 20min The organic matter in face;
(3) with (4) the step of above-mentioned case study on implementation one;
(4) preparation of perovskite absorbed layer configures the presoma of two-step method spin coating, by 230mg lead iodide and 150mg first Lead bromide is dissolved in 1ml n,N dimethylformamide (DMF) solvent, and 70 DEG C are stirred 5 hours.35ul precursor solution is taken to spread into On substrate, 3000rpm*30s is spin-dried for, and in 70 DEG C of annealing 20min, the film of glassy yellow is formed, by 40mg iodine carbonamidine and 20mg iodine Methylamine is dissolved in the isopropanol of 1ml, is stirred at room temperature 2 hours.The iodine methylamine of 800-100ul and the isopropyl of iodine carbonamidine are extracted with liquid-transfering gun Alcoholic solution fast-lighting yellow film surface, 3000rpm*30s are spin-dried for, and under the humidity of 30RH%, 150 DEG C of annealing 15min prepares perovskite activity light absorbing layer, with a thickness of 460nm;
(5)-(7) the step of reference implementation case one (6) to (8);
(8) preparation of anti-reflection layer is cut into the rectangular-shaped baby battery of 3mm*4mm with blade on top electrode with blade, Then upper indium electrode is put, size 1mm*2mm, for magnesium fluoride anti-reflection layer with vacuum coater (electric current 85A, evaporation rate For 0.2-0.3 angstroms per second) vapor deposition 0-100nm.The extraction of electrode wires: silver paste is painted at the back side of bottom Si battery, is drawn with silver wire Cathode;It is pressed in indium metal with probe and draws anode.
Table 3 is based on ITO/SnO2/Perovskite/Spiro/MoOx/ITO/MgF2The two polar stacks electricity of (70nm) structure Pond performance
Example IV:
The preparation method provided in the present embodiment is basically the same as the first embodiment, the difference is that by one step of embodiment (7) The thickness for preparing molybdenum oxide of middle protective layer is changed, and is 10 in vacuum degree-5Pa condition,Under conditions of, The thickness that molybdenum oxide (MoOx) is deposited is respectively 5nm, 10nm, 15nm, 20nm, 30nm.
The above is only a specific embodiment of the invention, it is noted that for those skilled in the art, Without departing from the principles of the invention, it can also make several improvements and retouch, these improvements and modifications also should be regarded as this hair Bright protection scope.

Claims (8)

1. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite, it is characterised in that by the perovskite of top layer The silicon heterogenous solar battery of solar battery and bottom is together in series by middle layer.From the perovskite battery lead of top layer One electrode draws another electrode from silicon heterogenous bottom, constitutes the series connection lamination solar cell of two electrodes.
2. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 1, it is characterised in that top Layer perovskite light-absorption layer has ABX3The organic inorganic hybridization perovskite of type crystal structure, wherein A is methyl amine or carbonamidine amine, B For lead, tin or antimony, X is iodine, bromine or chlorine, and forbidden bandwidth is 0.37-0.52 in 1.55eV-1.8eV, x value, mainly absorbs short wavelength Photon.
3. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 1, it is characterised in that bottom Layer solar cell is using commercialization Si battery, and forbidden bandwidth is in 1.12eV, the main photon for absorbing long wavelength.
4. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 2, feature exist In the following steps are included:
(1) preparation of bottom solar battery: the Si battery produced using Xin Ao company;
(2) sputtering of middle layer ITO, the ito thin film sputtered on Si base battery using magnetically controlled sputter method;
(3) preparation of electron transfer layer: SnO is used2·2H2O stoste and deionized water carry out according to a certain percentage be uniformly mixed or TiO2Nano particle using sol evenning machine 3000rpm*30s spin coating, then is made annealing treatment, and densification SnO is formed2Or TiO2It is thin Film;
(4) preparation of broad stopband calcium titanium ore bed: the presoma of two-step method spin coating is configured first, by lead iodide, lead bromide, cesium iodide It is dissolved in n,N dimethylformamide (DMF) solvent, 70 DEG C are stirred 5 hours.40mg iodine carbonamidine and 20mg iodine methylamine are dissolved in 1ml Isopropanol in, be stirred at room temperature 2 hours.With spin-coating method on the electron transport layer wheat flour for perovskite activity light absorbing layer;
(5) preparation of hole transmission layer: using spin-coating method spin coating organic cavity transmission layer solution on calcium titanium ore bed, is formed empty Cave transport layer;
(6) it the preparation of protective layer: when sputtering transparent electrode in order to prevent, is deposited on the hole transport layer using the method for thermal evaporation Interface-modifying layer.
(7) it the preparation of transparent electrode material: is prepared using magnetron sputtering apparatus sputtering ito thin film or vacuum deposition method DMD transparent electrode (MoOX/Au/Ag/MoOX)。
(8) extraction of electrode wires: negative line is drawn with silver wire behind silion cell, indium block draws on the surface point of ito thin film Electrode line out completes the preparation of series connection laminated device.
(9) preparation of anti-reflection layer: with vacuum coater, (electric current 85A, evaporation rate are magnesium fluoride anti-reflection layer) steam Plate 0-100nm.
5. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 1, wherein the connection The material of layer is ITO, with a thickness of 50~80nm;The material of the electron transfer layer is SnO2Or TiO2, with a thickness of 30nm;It is described The material of perovskite active absorbing layer is FA1-xMAxPbI3-yBry, FA:NH2CHNH2,MA:CH3NH3Extremely with a thickness of 300nm 500nm。
6. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 1, wherein hole transport Layer material be Spiro-OMeTAD (2,2 ', 7,7 '-four [N, N- bis- (4 methoxyphenyl) amino] -9,9 '-spiral shell, two fluorenes) or PTAA (poly- [bis- (4- phenyl) (2,4,6 trimethylphenyl) amine] or P3HT (3- hexyl thiophene)), with a thickness of 100nm-200nm.
7. a kind of lamination solar cell based on silicon heterogenous/two electrode of perovskite as claimed in claim 1, wherein the protection Layer with a thickness of 30nm is as the protection between side to light ito transparent electrode and hole transmission layer for the molybdenum oxide of vapor deposition Layer.
8. it is as claimed in claim 1 a kind of based on silicon heterogenous and perovskite two electrode solar batteries of series connection, wherein described meet light Face transparent electrode with a thickness of 240nm.
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CN110600614B (en) * 2019-09-19 2021-06-22 南京大学 Tunneling junction structure of perovskite/perovskite two-end laminated solar cell
CN112952001A (en) * 2019-12-10 2021-06-11 中国科学院大连化学物理研究所 Perovskite solar cell and preparation method thereof
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CN111740018A (en) * 2020-07-07 2020-10-02 吉林大学 Broadband, low-noise and ultrafast-response organic photoelectric detector with cascade structure and preparation method thereof
CN111740018B (en) * 2020-07-07 2022-08-09 吉林大学 Cascade structure organic photoelectric detector and preparation method thereof
CN114068750A (en) * 2020-07-31 2022-02-18 嘉兴阿特斯技术研究院有限公司 Perovskite/silicon heterojunction double-sided laminated solar cell, preparation method thereof and solar system
CN112736200A (en) * 2020-12-09 2021-04-30 苏州大学张家港工业技术研究院 Laminated battery and preparation method and application thereof
CN112736200B (en) * 2020-12-09 2023-05-26 苏州大学张家港工业技术研究院 Laminated battery and preparation method and application thereof
CN112864262A (en) * 2021-01-20 2021-05-28 西安电子科技大学 Perovskite-silicon two-end series battery based on mechanical pressing and preparation method
WO2023039967A1 (en) * 2021-09-16 2023-03-23 北京载诚科技有限公司 Laminated solar cell
CN114678391A (en) * 2022-01-26 2022-06-28 华北电力大学 Laminated solar cell
CN114883495A (en) * 2022-05-13 2022-08-09 武汉理工大学 Flat-meter-level perovskite solar cell module and preparation method thereof

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